TW200520146A - Method for forming a semiconductor device having isolation regions - Google Patents

Method for forming a semiconductor device having isolation regions

Info

Publication number
TW200520146A
TW200520146A TW093128719A TW93128719A TW200520146A TW 200520146 A TW200520146 A TW 200520146A TW 093128719 A TW093128719 A TW 093128719A TW 93128719 A TW93128719 A TW 93128719A TW 200520146 A TW200520146 A TW 200520146A
Authority
TW
Taiwan
Prior art keywords
forming
semiconductor device
current
isolation regions
isolation
Prior art date
Application number
TW093128719A
Other languages
Chinese (zh)
Other versions
TWI364813B (en
Inventor
Marius K Orlowski
Alexander L Barr
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200520146A publication Critical patent/TW200520146A/en
Application granted granted Critical
Publication of TWI364813B publication Critical patent/TWI364813B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H01L21/76235—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar

Abstract

A method for forming a semiconductor device (10) having isolation structures decreases leakage current. A channel isolation structure (32,30, 34) decreases leakage current through a channel structure. In addition, current electrode dielectric insulation structures (36) are formed under current electrode regions to prevent leakage between the current electrodes (40).
TW093128719A 2003-09-23 2004-09-22 Method for forming a semiconductor device having isolation regions TWI364813B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/668,714 US6964911B2 (en) 2003-09-23 2003-09-23 Method for forming a semiconductor device having isolation regions

Publications (2)

Publication Number Publication Date
TW200520146A true TW200520146A (en) 2005-06-16
TWI364813B TWI364813B (en) 2012-05-21

Family

ID=34313551

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093128719A TWI364813B (en) 2003-09-23 2004-09-22 Method for forming a semiconductor device having isolation regions

Country Status (7)

Country Link
US (1) US6964911B2 (en)
EP (1) EP1668691A2 (en)
JP (1) JP5068074B2 (en)
KR (1) KR101120770B1 (en)
CN (1) CN1846304B (en)
TW (1) TWI364813B (en)
WO (1) WO2005034186A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI450334B (en) * 2007-04-20 2014-08-21 Freescale Semiconductor Inc Method for selective removal of a layer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040242015A1 (en) * 2003-03-04 2004-12-02 Kyoung-Chul Kim Etching compositions for silicon germanium and etching methods using the same
KR100583725B1 (en) * 2003-11-07 2006-05-25 삼성전자주식회사 Semiconductor Device Having Partially Insulated Field Effect Transistor PiFET And Method Of Fabricating The Same
KR100598098B1 (en) * 2004-02-06 2006-07-07 삼성전자주식회사 Metal-Oxide-Semiconductor Having Buried Insulation Region And Methods Of Fabricating The Same
US7256077B2 (en) * 2004-05-21 2007-08-14 Freescale Semiconductor, Inc. Method for removing a semiconductor layer
KR100555569B1 (en) * 2004-08-06 2006-03-03 삼성전자주식회사 Semiconductor device having the channel area restricted by insulating film and method of fabrication using the same
JP4888118B2 (en) * 2004-09-16 2012-02-29 富士通セミコンダクター株式会社 Semiconductor device manufacturing method and semiconductor device
CN101297408A (en) * 2005-08-31 2008-10-29 斯平内克半导体股份有限公司 Metal source/drain schottky barrier silicon-on-nothing MOSFET device and method thereof
US7326601B2 (en) * 2005-09-26 2008-02-05 Advanced Micro Devices, Inc. Methods for fabrication of a stressed MOS device
JP2007165677A (en) * 2005-12-15 2007-06-28 Seiko Epson Corp Method of manufacturing semiconductor substrate and semiconductor device
JP2007201003A (en) * 2006-01-24 2007-08-09 Seiko Epson Corp Method of manufacturing semiconductor substrate, method of manufacturing semiconductor device, and semiconductor device
JP2007207960A (en) * 2006-02-01 2007-08-16 Seiko Epson Corp Semiconductor substrate and device, and its manufacturing method
FR2901058A1 (en) * 2006-08-29 2007-11-16 St Microelectronics Crolles 2 Semiconductor device e.g. double-gate transistor, has cavity formed on substrate and filled with non exposed resin forming gate, and with resin exposed by beams, where exposed resin is isolated from rest of substrate by non exposed resin
US8866254B2 (en) * 2008-02-19 2014-10-21 Micron Technology, Inc. Devices including fin transistors robust to gate shorts and methods of making the same
US20120146175A1 (en) * 2010-12-09 2012-06-14 Nicolas Loubet Insulating region for a semiconductor substrate
US9196522B2 (en) 2013-10-16 2015-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with buried insulator layer and method for forming

Family Cites Families (12)

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JPH077773B2 (en) * 1989-03-01 1995-01-30 工業技術院長 Method for manufacturing semiconductor device
JPH0521465A (en) * 1991-07-10 1993-01-29 Fujitsu Ltd Semiconductor device and manufacture thereof
FR2749977B1 (en) * 1996-06-14 1998-10-09 Commissariat Energie Atomique QUANTUM WELL MOS TRANSISTOR AND METHODS OF MANUFACTURE THEREOF
US6043126A (en) * 1996-10-25 2000-03-28 International Rectifier Corporation Process for manufacture of MOS gated device with self aligned cells
US6015917A (en) * 1998-01-23 2000-01-18 Advanced Technology Materials, Inc. Tantalum amide precursors for deposition of tantalum nitride on a substrate
FR2799307B1 (en) * 1999-10-01 2002-02-15 France Telecom SEMICONDUCTOR DEVICE COMBINING THE ADVANTAGES OF MASSIVE ARCHITECTURES AND ITSELF, MANUFACTURING METHOD
US6352903B1 (en) * 2000-06-28 2002-03-05 International Business Machines Corporation Junction isolation
FR2812764B1 (en) * 2000-08-02 2003-01-24 St Microelectronics Sa METHOD FOR MANUFACTURING SUBSTRATE OF SUBSTRATE-SELF-INSULATION OR SUBSTRATE-ON-VACUUM AND DEVICE OBTAINED
FR2821483B1 (en) * 2001-02-28 2004-07-09 St Microelectronics Sa METHOD FOR MANUFACTURING A TRANSISTOR WITH INSULATED GRID AND ARCHITECTURE OF THE SUBSTRATE TYPE ON INSULATION, AND CORRESPONDING TRANSISTOR
US6551937B2 (en) * 2001-08-23 2003-04-22 Institute Of Microelectronics Process for device using partial SOI
CN1253942C (en) * 2002-02-20 2006-04-26 台湾积体电路制造股份有限公司 MOS transistor structure for eliminating leakage current and CMOS image transistor
JP4546021B2 (en) * 2002-10-02 2010-09-15 ルネサスエレクトロニクス株式会社 Insulated gate field effect transistor and semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI450334B (en) * 2007-04-20 2014-08-21 Freescale Semiconductor Inc Method for selective removal of a layer

Also Published As

Publication number Publication date
WO2005034186A3 (en) 2005-11-03
EP1668691A2 (en) 2006-06-14
TWI364813B (en) 2012-05-21
CN1846304A (en) 2006-10-11
KR101120770B1 (en) 2012-03-23
WO2005034186A2 (en) 2005-04-14
KR20060121883A (en) 2006-11-29
CN1846304B (en) 2012-01-11
US20050064669A1 (en) 2005-03-24
US6964911B2 (en) 2005-11-15
JP2007507092A (en) 2007-03-22
JP5068074B2 (en) 2012-11-07

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees