WO2001013478A8 - Echangeur de chaleur pour lasers semi-conducteurs puissants - Google Patents

Echangeur de chaleur pour lasers semi-conducteurs puissants

Info

Publication number
WO2001013478A8
WO2001013478A8 PCT/RU2000/000153 RU0000153W WO0113478A8 WO 2001013478 A8 WO2001013478 A8 WO 2001013478A8 RU 0000153 W RU0000153 W RU 0000153W WO 0113478 A8 WO0113478 A8 WO 0113478A8
Authority
WO
WIPO (PCT)
Prior art keywords
arrays
microchannels
semiconductor lasers
communicating
laser
Prior art date
Application number
PCT/RU2000/000153
Other languages
English (en)
Russian (ru)
Other versions
WO2001013478A1 (fr
Inventor
Viktor Viktorovich Apollonov
Sergei Igorevich Derzhavin
Vitaly Vladimirovich Kuzminov
Dmitry Alexandrovic Mashkovsky
Alexandr Mikhailovic Prokhorov
Valery Nikolaevich Timoshkin
Vladimir Alexandrovi Filonenko
Original Assignee
Zakrytoe Aktsionernoe Obschest
Viktor Viktorovich Apollonov
Sergei Igorevich Derzhavin
Vitaly Vladimirovich Kuzminov
Dmitry Alexandrovic Mashkovsky
Alexandr Mikhailovic Prokhorov
Valery Nikolaevich Timoshkin
Vladimir Alexandrovi Filonenko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zakrytoe Aktsionernoe Obschest, Viktor Viktorovich Apollonov, Sergei Igorevich Derzhavin, Vitaly Vladimirovich Kuzminov, Dmitry Alexandrovic Mashkovsky, Alexandr Mikhailovic Prokhorov, Valery Nikolaevich Timoshkin, Vladimir Alexandrovi Filonenko filed Critical Zakrytoe Aktsionernoe Obschest
Priority to AU44415/00A priority Critical patent/AU4441500A/en
Priority to JP2001517471A priority patent/JP2003507893A/ja
Publication of WO2001013478A1 publication Critical patent/WO2001013478A1/fr
Publication of WO2001013478A8 publication Critical patent/WO2001013478A8/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F2260/00—Heat exchangers or heat exchange elements having special size, e.g. microstructures
    • F28F2260/02—Heat exchangers or heat exchange elements having special size, e.g. microstructures having microchannels
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • F28F3/12—Elements constructed in the shape of a hollow panel, e.g. with channels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention appartient au domaine des lasers semi-conducteurs et concerne notamment des échangeurs de chaleur destinés à être fixés à demeure pour refroidir des règles et des réseaux de diodes laser haute puissance. La structure des microcanaux destinés à l'écoulement du liquide de refroidissement est constituée par deux réseaux communicants de microcanaux à fente, lesdits réseaux étant faits à partir d'un matériau qui conduit bien la chaleur et disposés dans un boîtier commun. Un de ces réseaux, destiné à l'évacuation de la chaleur, est disposé directement sous l'emplacement de fixation du laser. Les axes des canaux des deux réseaux sont perpendiculaires. Le deuxième réseau est constitué de sous-systèmes de microcanaux non communiquants, qui servent à amener et à évacuer le liquide de refroidissement. L'écoulement du liquide génère des turbulences. L'objet de l'invention permet une meilleure évacuation de la chaleur depuis les zones actives du laser et se présente en outre comme un produit de haute technicité.
PCT/RU2000/000153 1999-08-16 2000-04-26 Echangeur de chaleur pour lasers semi-conducteurs puissants WO2001013478A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU44415/00A AU4441500A (en) 1999-08-16 2000-04-26 Heat exchanger for high-power semiconductor lasers
JP2001517471A JP2003507893A (ja) 1999-08-16 2000-04-26 高出力半導体レーザー用ヒートシンク

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99117691 1999-08-16
RU99117691A RU2169977C2 (ru) 1999-08-16 1999-08-16 Теплообменник для мощных полупроводниковых лазеров

Publications (2)

Publication Number Publication Date
WO2001013478A1 WO2001013478A1 (fr) 2001-02-22
WO2001013478A8 true WO2001013478A8 (fr) 2002-03-14

Family

ID=20223885

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2000/000153 WO2001013478A1 (fr) 1999-08-16 2000-04-26 Echangeur de chaleur pour lasers semi-conducteurs puissants

Country Status (4)

Country Link
JP (1) JP2003507893A (fr)
AU (1) AU4441500A (fr)
RU (1) RU2169977C2 (fr)
WO (1) WO2001013478A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7331378B2 (en) * 2006-01-17 2008-02-19 Delphi Technologies, Inc. Microchannel heat sink
RU2545015C2 (ru) * 2011-02-08 2015-03-27 Александр Александрович Мягков Генератор на энтропии
US10270220B1 (en) * 2013-03-13 2019-04-23 Science Research Laboratory, Inc. Methods and systems for heat flux heat removal
MX2017015246A (es) * 2015-05-27 2018-03-16 Landa Labs 2012 Ltd Dispositivo de proyeccion de imagen.
JP6609643B2 (ja) * 2016-01-26 2019-11-20 富士フイルム株式会社 レーザ装置
CN108346964B (zh) * 2018-02-05 2019-08-09 西北大学 一种旋转湍流微气泡式分水装置及其分水方法
RU2754393C1 (ru) * 2020-11-12 2021-09-01 Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) Способ охлаждения двумерной матрицы лазерных диодов, устройство для его осуществления и коннектор

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758926A (en) * 1986-03-31 1988-07-19 Microelectronics And Computer Technology Corporation Fluid-cooled integrated circuit package
US4881237A (en) * 1988-08-26 1989-11-14 Massachusetts Institute Of Technology Hybrid two-dimensional surface-emitting laser arrays
US5099910A (en) * 1991-01-15 1992-03-31 Massachusetts Institute Of Technology Microchannel heat sink with alternating flow directions
US5801442A (en) * 1996-07-22 1998-09-01 Northrop Grumman Corporation Microchannel cooling of high power semiconductor devices
RU2117371C1 (ru) * 1996-09-30 1998-08-10 Акционерное общество закрытого типа "Энергомаштехника" Матрица лазерных диодов

Also Published As

Publication number Publication date
WO2001013478A1 (fr) 2001-02-22
AU4441500A (en) 2001-03-13
RU2169977C2 (ru) 2001-06-27
JP2003507893A (ja) 2003-02-25

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