WO2001005889A1 - Composition a base de resine epoxy pour le cachetage de semi- conducteurs et dispositif a semi-conducteurs - Google Patents

Composition a base de resine epoxy pour le cachetage de semi- conducteurs et dispositif a semi-conducteurs Download PDF

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Publication number
WO2001005889A1
WO2001005889A1 PCT/JP1999/003817 JP9903817W WO0105889A1 WO 2001005889 A1 WO2001005889 A1 WO 2001005889A1 JP 9903817 W JP9903817 W JP 9903817W WO 0105889 A1 WO0105889 A1 WO 0105889A1
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Prior art keywords
epoxy resin
resin composition
formula
flame retardant
semiconductor element
Prior art date
Application number
PCT/JP1999/003817
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English (en)
Japanese (ja)
Inventor
Hiroyoshi Kokaku
Akira Nagai
Takumi Ueno
Ryo Moteki
Toshiaki Ishii
Hiroki Sashima
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Hitachi, Ltd.
Hitachi Chemical Co., Ltd.
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Application filed by Hitachi, Ltd., Hitachi Chemical Co., Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1999/003817 priority Critical patent/WO2001005889A1/fr
Priority to JP2001511113A priority patent/JP4147030B2/ja
Publication of WO2001005889A1 publication Critical patent/WO2001005889A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/38—Boron-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the present invention relates to an epoxy resin composition containing a boric acid conjugate as a flame retardant IJ and having an environment in which no harmful gas force 3 is generated during combustion, and a semiconductor device using the same.
  • Semiconductor devices such as Transistor, C, and L S have been mainly used in the mass production type because of their mass production.
  • a composition obtained by combining an epoxy resin and a phenolic resin with a hardener is used for its growth, mechanical specialty injection, hygroscopic specialty injection, and adhesive adhesion.
  • the characteristic balance is good, and the reliability is excellent.
  • a bromine-based epoxy resin such as a bromine-based epoxy resin or a bromine-based phenolic compound is used.
  • Kaka Shinano force 5 et al. These compounds are his own is Kokorotori there are variable affirmative Note that adversely affect the environment and generate harmful gases during combustion les, Ru.
  • the desorbed bromine from the bromine-based compound corrodes the connection between the semiconductor element and the gold wire between the azireminium and the gold wire.
  • the desorbed bromine promotes the corrosion of the semiconductor element's unrecycled wire itself, and lowers the reliability of the semiconductor device against moisture.
  • Antimony a flame retardant aid, also contributes to corrosion. That is, Antimony and bromine combine to generate bromine diantimony gas, which further promotes the elimination reaction of bromine.
  • Japanese Unexamined Patent Publication No. 5-32O319 discloses a method of providing a highly heat-stable polymer.
  • Japanese Patent Application Laid-Open No. 4-487759 discloses the use of bromine-based bisphenol A-type epoxy resin with a bromine power of 5 roosters. Discloses the use of the ion capture system U of the nodule-silver system.
  • JP-A-7-157542 and JP-A-7-1733372 disclose the use of a red phosphorus-based flame retardant.
  • Japanese Patent Application Publication No. 7914 discloses the use of a boric acid-based conjugate such as zinc borate together with silica, and presents a nodogen-based flame retarding method.
  • Japanese Patent Application Laid-Open Nos. 7-331033 and 8-151505 disclose phenolic tree S, lin or red lin, nitrogen, boron conjugate, Disclosed is a combination system of two or more nodogen-based flame retardants selected from metal aquatic products.
  • bromine I spoon epoxy resin fact used above word of himself (a) is increasing effect of thermal decomposition temperature are very rather small, less the effect of preventing desorption of bromine.
  • the ion scavenger (b) has a limited bromine supplementing capacity even if the amount of the rooster is increased, and if the amount of the rooster is too large, the composition of the flour-stopping tree will grow. There are problems such as lowering of the injection rate and higher moisture absorption.
  • the non-prone flame retardant is less effective in imparting flame retardance than that of bromine antimony. Therefore, it meets the flame retardant's UL-94 standard V-0. To do so, it is necessary to combine large amounts of flame retardants.
  • a jujube-stopper composition containing a large amount of the nodogen-based flame retardant Some fear force 5 causing an increase in reduction and moisture absorption of Naru ⁇ 'and adhesive' properties.
  • red phosphorus when used as a flame retardant, an explosion or fire will occur, so care must be taken 5 'for handling.
  • the present invention has been made in view of the state of the above-mentioned self, and has as its object the purpose of the present invention is to provide a semiconductor which is excellent in flame retardancy and growth by using a non-nitrogen-based flame retardant.
  • An object of the present invention is to provide a sealing epoxy resin composition and a semiconductor device sealed with the composition. Disclosure of the invention
  • the gist of the present invention is as follows.
  • the present invention can also include various types of Koyaguchi flame retardant aids.
  • the present invention provides a semiconductor device which is sealed with an epoxy resin composition containing at least a part of a semiconductor element 5 , an epoxy resin composition, an epoxy resin composition, a hardener, a hardener accelerator, and a flame retardant.
  • the flame retardant has the formula (1) xM (II) O-yB203-zH20 (1)
  • the present invention ⁇ Also, one surface force 5 evening of the semiconductor element, 'Lee Bruno, is bonded to the head, the other side Roh head for external connection provided in the semiconductor element, external connection Roh Uz A semiconductor device in which a lead and an external lead are connected via a conductive wire, and at least the semiconductor element is sealed with an epoxy resin composition.
  • the present invention provides an external connection node and an external connection node provided on a surface of a semiconductor element which is connected to an external lead via an adhesive layer and which has the adhesive layer.
  • the flame retardant of the epoxy resin composition is represented by the formula (1)
  • x / force 2 0.1 is less than 2 Ri combined force s Do rather difficult for stable boric Sani ⁇ of quality, to satisfy the desired JP 'Note That flame retardant' NOTE U L-9 4 standard V- 0 No special features can be obtained.
  • a substantially preferred range is from 0.5 to 3.0.
  • Mi in the general formula (1) represents a divalent metal.
  • a boric acid conjugate of the general formula (1) such as M force s dumbbell, copper, nickel, manganese, iron or the like can be used in combination.
  • the boric acid conjugate of the present invention can be produced by the steps (A) to (D) described below if the porosity is high.
  • C water contains 70 g of oxides of various components such as potassium, magnesium, beryllium, nordium, iron, and 90 g of concentrated sulfuric acid of 90% or more. Make a solution.
  • the method for producing the boric acid conjugate according to the present invention is not limited to the above, and may be a commercially available ligone.
  • the flame retardant effect can be improved with the same amount of added calories. Higher. Since the particles exceeding a particle diameter Ca 5 5 m 5 0 wt% or more and multi-Ku becomes the dispersion 'of epoxy tree S purport composition becomes poor, resulting in the flame of partially Ri uneven distribution is likely to occur The fuel injection drops. More preferably, boric acid compounds The particle diameter is s O .5-3 / zm.
  • added Caro amount of boric Sani ⁇ of the formula (1) for the epoxy resin moon effect 1 0 0 wt ⁇ IS, favored this and force 2 is 2-8 0 parts by weight New If the weight is less than 13%, the amount of boric acid compound will be insufficient and the UL-94 standard V-0 will not be satisfied. On the other hand, if the amount exceeds 80 parts by weight, depending on the boric acid compound, the flow rate during the growth of the epoxy resin composition will decrease, and the material and flow path in the mold will be reduced when the transfer is performed. The narrow part of may be unfilled. As a result, a stable product cannot be obtained with a semiconductor device having a thin and small package, and the shape of the semiconductor device is limited.
  • a flame retardant comprising at least one of a boric acid conjugate represented by the formula (1) and a motivational conjugate, a metal water conjugate, and a metal conjugate.
  • the use of one or more of these noble metal compounds, metal hydrated compounds, and metal oxidized compounds makes it possible to obtain the flame retardant A multiplying effect is obtained, and the flame retardant property UL-94 standard V-0 can be achieved with a small amount of additional force. For this reason, there is little effect on other characteristics such as the composition, electrical characteristics, mechanical characteristics, and adhesiveness of the flour composition for sealing.
  • Examples of the above-mentioned self-descried conjugates include triazine conjugates, melamin and its derivatives, melamin sulfate, melaminocyanurate and its derivatives, Examples thereof include ammonium sulfate, benzoguanamine and derivatives thereof, cyanuric monooleic acid, isocyanuric acid, melamine phenol, and its conductor.
  • examples of the above-mentioned metal oxidized products include: ⁇ ⁇ copper, oxidized sub-complex, ⁇ cesium, ⁇ ⁇ iron, ⁇ ⁇ titanium, ⁇ Shiroi Mangan, Soraido Norium, Soraido Nano Reminimum, Soraido Conosolet, Soraido Nickenore, Soraido Indium, Soraido Tin, Soraido Tungsten, Soraido Bismuth, acid strontium and the like can be mentioned.
  • ⁇ of flame 'retardant agent ⁇ amounts Shi preferred range forces s of 0. 1 ⁇ 1 O 0 part by weight against the Housani ⁇ product 1 0 0 parts by Rere.
  • Epoki shea tree moon effect is not particularly limited, Mochiiruko and power s things public Yaguchi which the semiconductor encapsulation is normally used I can do it.
  • a bisphenol-type epoxy tree such as phenolic epoxy tree S, crenosolenoborak epoxy tree luster, bisphenol A, bisphenol F, and bisphenol S epoxy tree fl.
  • the hardener is preferably a phenolic conjugate having one or more phenolic / hydroxyl groups per molecule.
  • ⁇ 'conjugates having two or more hydroxyl groups are preferred.
  • ⁇ ! 1 For example, pheno-reno-bora-ku, polycondensate of pheno-re and aranole-quino-re-no-tenore, bis-fueno-le-tree, honole-to-rezo-soleno-borak-tree, 11-poly, poly-vinyl-vinyl-enolate, etc. Power s lifted.
  • it is a 1,8 diazabi-sik mouth (5,4,0) of the amide series.
  • a tri-phenylene phosphine such as a slag or phosphorus type material.
  • inorganic and organic fillers of Koya! can be used.
  • fine powders such as fused silica, crystalline silica, aziremina, cadmium carbonate, dinorecone silicate, kanoresium silicate, sesame, cranes, and my powers are used for the production of fine powders, such as ⁇ It is preferable for measuring mechanical strength.
  • the particle diameter of the filler is preferably from 0.1 to 3 O 5, more preferably from 0.5 to 1 O m. If the average particle size is less than 0.1 ⁇ m, the thixotropic properties of the epoxy luster composition will increase, the viscosity will increase significantly, and the forming power 3 will be difficult. If the average particle size exceeds 3 O ⁇ m, the material inside the mold and the narrow part of the flow channel cannot be filled, and the filler and the filler are easily separated from the slurries. A grown product cannot be obtained. Further, the flexible agents, mosquito Ppuri ring, lubricant can Mochiiruko and power 2 things public Yaguchi also coloring agent. BRIEF DESCRIPTION OF THE FIGURES
  • FIG. 1 shows the relationship between the amount of addition of the flame retardant [] and the maximum combustion time (3 ⁇ 4) when the flame retardant was calcium borate and dumbbell borate. Kaziresic acid and boric acid The relationship between the amount of additional force ⁇ of the flame retardant and the total combustion time in the case of the above is shown.
  • FIG. 3 is a cross-sectional view of a semiconductor device sealed with the epoxy resin composition for semiconductor encapsulation of the present invention.
  • FIG. 4 is a cross-sectional view of a semiconductor device of the present invention which has been fixed with the epoxy resin composition for semiconductor encapsulation of J of the present invention.
  • Embodiment 1 a specific description will be given with reference to Embodiment 1.
  • Table 1 shows the epoxy resin S, the phenolic resin, the flame retardant, the flame retardant aid, and the flame retardant ij used in Examples 11 to 9.
  • Table 2 shows the types, x / y, z / y, average particle diameter, dehydration temperature and amount of added calorie of the boric acid conjugated compound flame retardant.
  • Table 3 shows the results of evaluation of the composition of the rooster composition and the growth and flame retardant properties of the tree composition used in Examples 1 to 9.
  • the evaluation of flame retardancy was performed according to the UL-94 standard. Specifically, using a strip-shaped wood plate (specimen) prepared by the method described below, bring the flame of the gas gas closer to one of the S ⁇ of the wood g plate, and draw the wood plate. After burning and igniting (first ignition) and holding it for a predetermined time, the gas flame is moved away from the tree S-plane and the time until the flame s of the tree S-plane disappears is measured. After that, the first ignition part of the same wood board is ignited again with a gas burner (second ignition), and the time until the flame goes out is determined as before.
  • first ignition first ignition
  • the ⁇ j value is measured using five expression specimens for one kind of the tree composition, and when the average value is less than a maximum of 10 or less, a total of 50 or less is determined as V-0. On the other hand, if the maximum is less than 30 mm and the average is less than 250, V-1.
  • the evaluation of the growth growth was carried out by measuring the length of the grown product when the snoy lanolevu was grown under the same conditions as in the preparation of the g-type test specimen in accordance with EMM-1-1-66. went.
  • TPP Triphenylphosphine ⁇ ts3
  • the inorganic packing used in the above-mentioned! I was a square silica having an average particle size of 3 to 15 m and a spherical silica having an average particle size of 5 or less, and an average particle size of 10 to 50 ura.
  • Epoxy silane was used as the ring U
  • monmonic acid ester wax was used as the mold release
  • carbon black was used as the coloration uniform.
  • Each composition shown in Table 1 was kneaded for 10 minutes at a surface temperature of about 60-90 ° C. using a biaxial caloric hot mouth with a diameter of 8 inches.
  • Example 1 As shown in J1, by using the specific boric acid conjugate of the present invention as a flame retardant, even the boric acid conjugate alone can be used as a post-cured specimen according to UL-94 standard.
  • Ability to achieve V-0 1 The ratio of the metal oxidized product and boric acid in the conjugated product is defined as 1: ratio (x / y) and water content (z / y). could this and the force s to obtain an excellent boric Sani ⁇ of'm Ri flame-retardant effect to.
  • Example 2 As shown in FIG. 2, by selecting a boric acid conjugate having a small particle size to reduce the content of 5 ⁇ m or less to 70% by weight (50% by weight or more). In Example 1, it is possible to achieve V-0 of UL-94 standard with a smaller amount of the flame retardant. This is considered to be because the dispersibility of the flame retardant in the epoxy core was improved and the flame retardant effect was enhanced.
  • Example 3 As shown in I 3, as a boric acid conjugate, a material having a dehydration temperature higher than the decomposition temperature of epoxy tree S, at a temperature of 330 ° C. (350 ° C. or more) By using, it is possible to achieve V-0 of UL-94 standard with a smaller amount of flame retardant compared to the practice ⁇ !
  • the post-curing of the epoxy resin composition improves flame retardancy. This is considered to be due to the fact that a carbon residue is easily formed during combustion due to an increase in crosslink density.
  • Recent semiconductor devices have been manufactured in order to improve mass production and lower prices. A study is underway to ship the product as it is, with the process omitted. INDUSTRIAL APPLICABILITY The present invention can contribute to the realization of process omission during mass production without impairing flame retardancy.
  • the amount of the specific boric acid conjugate of the present invention is 2 to 80 weight%, whereby the flame retardant '( ⁇ UL- 9 4 while maintaining the V- 0 standard 'can be a force 5 a longer Sno Lee Ranorefuro one is a measure of Note. this value forces 2 long ⁇ window flow' Naru ⁇ $ Note good material der Since large-scale products can be produced at once, multiple products can be taken, which can contribute to improving mass production.
  • Fig. 1 shows the results of the use of sodium borate as the flame retardant of Example ⁇ ! 5 and the change of the flame retardant in Example ⁇ 15 from cane resulfate to dumbbell borate.
  • the relationship between the amount of calorie added to the flame retardant and the maximum burning time in each of the azmo-nored products [filler content (FC) 80% by weight] is shown.
  • Fig. 2 shows the addition of flame retardants! Shows the relationship between the amount and the total combustion time of 10 hours.
  • FIG. 3 shows an example of a semiconductor device in which a semiconductor element is fixed with the epoxy resin composition obtained in ⁇ J1. Is shown.
  • a semiconductor element 1 is mounted on a die 2 via an adhesive layer 4 such as a silver paste.
  • An external connection [3 connecting node 6 force s] is provided on the surface of the semiconductor element 1 having an electric circuit, and the node is electrically connected to the external lead 3 with a force s conductive wire 5.
  • the resin sealing was performed using a transfer press at a mold temperature of 180 ° C and a growth pressure of 70 kgf / cm 2 .
  • a pressure-cooking test was conducted by leaving the obtained semiconductor device (also at 121 ° C. and 2 atm. In a pressure oven at 200 ° C. for 200 O hours) to examine the corrosion state of the rooster line. As a result, there was no disconnection of the rooster line due to corrosion, and it operated normally.
  • Fig. 4 shows ⁇ ! Of a semiconductor device in which a semiconductor element is encapsulated with the epoxy resin composition obtained in Example J5.
  • a part of the surface of the semiconductor element 1 having the electric circuit (not shown) and the external sound 13 lead 3 are adhered by the adhesive layer 8.
  • Previous remarks one ⁇ surface having himself electrical circuit external connection Roh Uz de 6 force s provided, ⁇ No Uz de and previous remarks himself external lead 3 are conductively 'resistance Waiya 5 I Ri is electrically connected to the the are 0 the semiconductor device, previous remarks himself outside ⁇ 13 Li - was sealed Keisun in implementation except for some de 3 ⁇ epoxy resin obtained in 5 S purport composition 7!.
  • the resin sealing was performed using a transfer growth press under the conditions of a mold temperature of 180 ° C, a growth pressure of 70 kgf / cm 2 and a growth time of 90 seconds.
  • the resulting semiconductor device was operated 1 2 1 ° C, 2 0 0 0 hours after standing at 2 atm Puretsusha-click Uz mosquito ⁇ also Rooster disconnection due himself line of corrosion rather name normally 0
  • the epoxy resin composition according to the present invention is obtained by using a specific boric acid conjugate without using a flame retardant such as nodogen, antimony, and phosphorus to make it extremely effective. Excellent in terms of environment. In addition, it is excellent in terms of growth property, heat resistance of a hard sword, and moisture resistance. I ". Therefore, a semiconductor device encapsulated with the epoxy resin composition of the present invention has a high density. It has high industrial value because it can cope with high integration, small and thin, and light weight.

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  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

Cette invention concerne une composition à base de résine époxy qui comprend une résine époxy, un durcisseur, un accélérateur de durcissement et un matériau anti-feu. Cette résine présente de remarquables caractéristiques en termes d'ignifugation et d'aptitude au moulage et se caractérise en ce que le produit ignifuge comprend un composé à base d'acide borique représenté par la formule (1) xM(II)O.yB2O3.zH2O (dans laquelle 0,2≤x/y≤6,0 ; et M(II) représente un métal divalent) ; et un dispositif semi-conducteur de fabrication très fiable réalisé à partir de cette composition.
PCT/JP1999/003817 1999-07-14 1999-07-14 Composition a base de resine epoxy pour le cachetage de semi- conducteurs et dispositif a semi-conducteurs WO2001005889A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP1999/003817 WO2001005889A1 (fr) 1999-07-14 1999-07-14 Composition a base de resine epoxy pour le cachetage de semi- conducteurs et dispositif a semi-conducteurs
JP2001511113A JP4147030B2 (ja) 1999-07-14 1999-07-14 半導体封止用エポキシ樹脂組成物及び半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1999/003817 WO2001005889A1 (fr) 1999-07-14 1999-07-14 Composition a base de resine epoxy pour le cachetage de semi- conducteurs et dispositif a semi-conducteurs

Publications (1)

Publication Number Publication Date
WO2001005889A1 true WO2001005889A1 (fr) 2001-01-25

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PCT/JP1999/003817 WO2001005889A1 (fr) 1999-07-14 1999-07-14 Composition a base de resine epoxy pour le cachetage de semi- conducteurs et dispositif a semi-conducteurs

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Country Link
JP (1) JP4147030B2 (fr)
WO (1) WO2001005889A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101190765B1 (ko) 2005-12-29 2012-10-12 주식회사 케이씨씨 반도체 소자 봉지용 에폭시 수지 조성물
JP2020158694A (ja) * 2019-03-27 2020-10-01 住友ベークライト株式会社 粉体および封止用樹脂組成物の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993010045A1 (fr) * 1991-11-22 1993-05-27 U.S. Borax Inc. Borate de zinc
WO1995006085A1 (fr) * 1993-08-20 1995-03-02 Nitto Denko Corporation Dispositif a semi-conducteur
JPH08151505A (ja) * 1994-11-29 1996-06-11 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物
JPH09151301A (ja) * 1995-11-30 1997-06-10 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993010045A1 (fr) * 1991-11-22 1993-05-27 U.S. Borax Inc. Borate de zinc
WO1995006085A1 (fr) * 1993-08-20 1995-03-02 Nitto Denko Corporation Dispositif a semi-conducteur
JPH08151505A (ja) * 1994-11-29 1996-06-11 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物
JPH09151301A (ja) * 1995-11-30 1997-06-10 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101190765B1 (ko) 2005-12-29 2012-10-12 주식회사 케이씨씨 반도체 소자 봉지용 에폭시 수지 조성물
JP2020158694A (ja) * 2019-03-27 2020-10-01 住友ベークライト株式会社 粉体および封止用樹脂組成物の製造方法

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