WO2000072433A1 - Circuit de commutation - Google Patents

Circuit de commutation Download PDF

Info

Publication number
WO2000072433A1
WO2000072433A1 PCT/JP1999/002636 JP9902636W WO0072433A1 WO 2000072433 A1 WO2000072433 A1 WO 2000072433A1 JP 9902636 W JP9902636 W JP 9902636W WO 0072433 A1 WO0072433 A1 WO 0072433A1
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
circuit
switching
switching circuit
series
Prior art date
Application number
PCT/JP1999/002636
Other languages
English (en)
Japanese (ja)
Inventor
Atsuhiko Masuda
Masayuki Abe
Original Assignee
Kansai Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kansai Research Institute filed Critical Kansai Research Institute
Priority to PCT/JP1999/002636 priority Critical patent/WO2000072433A1/fr
Publication of WO2000072433A1 publication Critical patent/WO2000072433A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/56—Power conversion systems, e.g. maximum power point trackers

Definitions

  • the present invention relates to a switching circuit with low power loss.
  • switching circuits for large power control of inverters that convert DC power from solar cells or fuel cell power generation systems into AC power for home use generally use Si semiconductor devices, and transistors with the same characteristics, Combining multiple diodes to form one switching circuit. Also, as such a transistor,
  • IGBT insulated gate bipolar transistor
  • MOSFET metal oxide semiconductor field effect transistor
  • the switching device when it is assumed that the switching device is used as a switching device for high power control, it is necessary to improve the efficiency of the device while maintaining the device withstand voltage. In this case, the device withstand voltage decreases. As a result, the current technology for improving the efficiency of Si semiconductor devices is close to its theoretical limit, and it is difficult to significantly improve efficiency.
  • the present invention has been made in view of the above circumstances, and has as its object to provide a switching circuit with low power loss. Disclosure of the invention The characteristic configuration of the switching circuit according to the present invention for achieving the above object is as follows.
  • the first characteristic configuration is provided with a series circuit in which a Si transistor and a non-Si transistor are connected in series, and the conversion capacity of the Si transistor is 0.1 kVA to 200 kVA.
  • the non-Si transistor is made of a SiC or GaN-based semiconductor.
  • a second characteristic configuration is that a parallel circuit formed by connecting the Si transistor and the non-Si transistor of the first characteristic configuration in parallel is provided.
  • the present invention is characterized in that a series-parallel circuit in which the non-Si transistor is connected in parallel to the series circuit having the first characteristic configuration is provided.
  • the non-Si transistor is made of a SiC or GaN-based semiconductor means that in the case of an FET (field effect transistor) or the like, the breakdown electric field strength is about 10 times (3 MV_cm ),
  • the channel length can be scaled down (short channel) while maintaining the required device breakdown voltage, and the carrier concentration can be increased up to 100 times Si. This means that the resistance can be reduced by increasing the carrier concentration.
  • the GaN-based semiconductor is GaN, AIGAN, InGAN, or INAlGAN, or a combination thereof.
  • both the S i transistor and the non-S i transistor can reduce the voltage applied to both ends of the transistor compared to when they are used alone and can afford a withstand voltage. The voltage increases and the conversion capacity increases.
  • the switching current to be turned on or off by the switching circuit is shared by the S i transistor and the non-S i transistor, so that the entire circuit is formed by the expensive non-S i transistor. Even without this, it is possible to reduce the conduction loss and the switching loss. That is, since the non-Si transistors of the parallel circuit can be turned on at high speed, the turn-on time of the entire parallel circuit can be reduced, the operating frequency can be improved, and the switching loss and the conduction loss can be reduced at the same time.
  • both the turn-on time and the turn-off time of the switching circuit can be shortened, and the power loss can be reduced at both the turn-on and the turn-off.
  • the fact that the conversion capacity (rated voltage X rated current or rated voltage X average current) of the Si transistor is 0.1 kVA to 200 kVA means that: This means that the switching circuit itself is for high power control in the first place.
  • a device with a large conversion capacity has a low maximum operating frequency
  • a device with a small conversion capacity has a high maximum operating frequency. Therefore, irrespective of the conversion capacity of the Si transistor in the above range, according to the first to third features, the maximum operating frequency and / or the conversion capacity of the Si transistor can be effectively improved. This is equivalent to
  • a fourth characteristic configuration is that, in addition to the first, second or third characteristic configuration, the Si transistor is an IGBT (insulated gate bipolar transistor). According to the fourth characteristic configuration, a Si transistor having a larger conversion capacity than a MOSFET and a transistor having an operation frequency higher than that of a normal bipolar transistor can be obtained, so that the performance of the entire switching circuit can be improved.
  • a fifth characteristic configuration is that, in addition to the first, second, or third characteristic configuration, the non-Si transistor is a field-effect transistor. According to the fifth characteristic configuration, a transistor having a high switching speed and a low ⁇ N resistance can be obtained.
  • FIG. 1 is a circuit diagram showing a basic structure of an inverter circuit
  • FIG. 2 is a circuit diagram of a switching circuit according to the present invention comprising a series circuit in which a Si transistor and a non-Si transistor are connected in series.
  • FIG. 3 is a circuit diagram showing an example.
  • FIG. 4 is a circuit diagram showing an example of a switching circuit according to the present invention including a parallel circuit formed by connecting an Si transistor and a non-Si transistor in parallel.
  • FIG. 4 is a waveform diagram showing switching characteristics at the time of turn-on of each of a non-S i transistor and a parallel circuit;
  • FIG. 6 is an example of a switching circuit according to the present invention, comprising a series circuit in which a Si transistor and a non-Si transistor are connected in series and a series-parallel circuit in which the non-Si transistor is connected in parallel;
  • FIG. 7 is an explanatory diagram showing the conversion capacity and operating frequency of the high power control device. BEST MODE FOR CARRYING OUT THE INVENTION
  • the inverter circuit 1 is composed of a converter section 10, a smoothing circuit 11, and an inverter section 12, and a high-frequency three-phase AC input (for example, 10 kHz to 20 kHz) is commercially available. It is a three-phase AC output with a frequency (50 Hz or 60 Hz).
  • the high-frequency three-phase AC input is obtained by orthogonally converting DC power from a solar cell, a fuel cell, or the like using a transistor circuit, and boosting the DC power using a high-frequency transformer.
  • the inverter unit 12 is provided with switching circuit units 13 at six locations between two internal nodes N 1 and N 2 and three output nodes Q 1, Q 2 and Q 3.
  • Each switching circuit unit 13 is composed of a switching device 14 and a return diode 15.
  • the switching device 14 and the freewheeling diode 15 generally use a Si transistor and a Si diode.
  • each of the switching circuit units 13 is replaced with a Si transistor 21 and a non-S i It is composed of a series circuit 23 formed by connecting the transistor 22 in series. Further, the freewheel diode 15 is provided in parallel with each of the Si transistor 21 and the non-Si transistor 22.
  • the S i transistor 21 is S i —I G B T, and its electrical characteristics are withstand voltage.
  • the non-Si transistor 22 is a GaN-FET, and its electrical characteristics are as follows: withstand voltage (drain-source voltage) of 300 V, current capacity (drain current) of 75 A, The one-off delay time is 150 ns and the fall time is 40 ns. Note that both the turn-off delay time and the fall time are for a 200 V, 20 A resistive load.
  • the turn-off time from when the gate voltage changes until the switching circuit turns off is the sum of the turn-off delay time and the fall time.
  • the gate voltages of the S i transistor 21 and the non-S i transistor 22 are controlled by independent control circuits to control the switching speed between the S i transistor 21 and the non-S i transistor 22.
  • each gate voltage is controlled to match the on-resistance.
  • the gate voltage shown in FIG. 3 is that of the S i transistor 21 with respect to the series circuit 23.
  • the gate voltage of the non-S i transistor 22 is It is delayed by 25 ns from the gate voltage of the Si transistor 21.
  • the switching loss can be considered as power consumed by a current that temporarily passes through both switching circuit units 13 when one of the pair of switching circuit units 13 is turned off and the other is turned on. it can. Accordingly, the maximum switching loss L off in the switching circuit unit 13 that is turned off is approximately expressed by Equation 1.
  • V, I, and f are the voltage, current, switching time (turn-off time), and switching frequency, respectively.
  • the maximum switching loss Loff is determined by the turn-off time. Improve proportionately. In the case of this embodiment, it is improved by about 24%. When the switching frequency f is 20 kHz and the load is 200 V and 20 A resistive, the maximum switching loss Loff per unit 13 of the switching circuit is reduced by about 1.3 W.
  • each of the switching circuit units 13 is replaced with the switching device 14 instead of the switching device 14.
  • It comprises a parallel circuit 26 formed by connecting the Si transistor 24 and the non-Si transistor 25 in parallel.
  • the reflux diode 15 is provided in parallel with each of the Si transistor 24 and the non-Si transistor 25.
  • the Si transistor 24 is a Si—IGBT, and its electrical characteristics are a withstand voltage (collector-emitter voltage) of 600 V, a current capacity (collector current) of 50 A, and a turn-on delay time. 40 ns, and the rise time is 26.5 ns.
  • the non-Si transistor 25 is a GaN-FET and has electrical characteristics such as a withstand voltage (drain-source voltage) of 600 V, a current capacity (drain current) of 30 A, and a turn-on delay. The time is 40 ns and the rise time is 40 ns. Note that both the turn-on delay time and the rise time are for a 200 V, 20 A resistive load.
  • the turn-on time from the change of the gate voltage until the switching circuit is turned on is the sum of the turn-on delay time and the rise time. 5 ns, 80 ns for the non-Si transistor 25 alone, and about 200 ns for the parallel circuit 26 as a whole. In this case, the gate voltage of the Si transistor 24 of the parallel circuit 26 and the gate voltage of the non-Si transistor 25 are designed to rise simultaneously.
  • the switching loss can be considered as the power consumed by the through current of the pair of switching circuit units 13 as described above. Therefore, the maximum switching loss L on in the switching circuit unit 13 on the side that is turned on is approximately represented by the above-described formula 1 as in the case of the maximum switching loss L off. In this case, the switching time is the turn-on time.
  • the maximum switching loss Lon is the turn-on time. It is improved in proportion to In the case of the present embodiment, it is improved by about 34%.
  • the switching frequency f is 20 kHz and the load is 200 V and 20 A resistive, the maximum switching loss L on per unit of the switching circuit unit 13 is reduced by about 1.3 W. Is done.
  • each of the switching circuit units 13 is replaced with the above-described series circuit 23 instead of the switching device 14, It comprises a series-parallel circuit 27 in which non-Si transistors 25 are connected in parallel.
  • the reflux diode 15 is provided in parallel with each of the Si transistor 21 and the non-Si transistors 22 and 25.
  • the turn-off time and the turn-on time of the series-parallel circuit 27 are shortened as in the case of the first embodiment and the second embodiment, respectively.
  • the switching loss is reduced by about 2.6 W, and the inverter section 12 is provided with the six switching circuit units 13, so that the power loss of about 15 W is improved in the entire inverter circuit 1. Is done.
  • the efficiency increases by about 0.4%.
  • the efficiency of an inverter is about 93%, and further improvement is extremely difficult. Therefore, an efficiency improvement of about 0.4% is sufficiently large as an effect.
  • the control of the gate transistors 21 and the non-Si transistors 22 and 25 at the time of turning off and turning on each gate voltage is in accordance with the first and second embodiments. . Further, according to the switching circuit of the present invention, since the switching speed is improved as described above, the switching frequency of the switching circuit can be increased in addition to the effect of reducing the switching loss. High frequency AC input frequency can be set higher. As a result, the high-frequency transformer used in the preceding stage of the inverter circuit 1 can be reduced in size and efficiency.
  • the Si transistors 21 and 24 may be transistors other than IGBT.
  • the non-Si transistors 22 and 25 may be transistors other than FET.
  • the electrical characteristics of 25 are not limited to those of the above embodiments.
  • each of the non-Si transistors 22 and 25 may be other GaN such as AIGaN, InGAn, or InA1GaN. It may be a system transistor or a SiC transistor.
  • the switching circuit of the present invention is applied to the inverter circuit 1, but may be applied to circuits other than the inverter circuit 1. Industrial applicability
  • the switching circuit of the present invention can be used in, for example, a switching circuit such as an inverter that converts DC power from a solar cell or a fuel cell power generation system into AC power for home use, and improves the conversion efficiency of the inverter. be able to.
  • a switching circuit such as an inverter that converts DC power from a solar cell or a fuel cell power generation system into AC power for home use, and improves the conversion efficiency of the inverter. be able to.

Abstract

L'invention concerne un circuit de commutation à faible perte en puissance pouvant être utilisé en tant que circuit de commutation à forte puissance, par exemple un circuit inverseur (1), qui convertit une puissance de courant continu provenant d'une batterie solaire ou d'un système de pile à combustible en courant alternatif domestique. Le circuit de commutation comprend un circuit série (23) d'un transistor silicium (21) et d'un transistor non silicium (22); ou un circuit parallèle (26) d'un transistor silicium (24) et d'un transistor non silicium (25); ou un circuit série/parallèle (27) du circuit série (23) et du transistor non silicium (25). La capacité de conversion des transistors silicium (21) et (24) est de 0,1kVA à 200kVA, les transistors non silicium (22) et (25) consistant en un semi-conducteur à base SiC ou GaN.
PCT/JP1999/002636 1999-05-19 1999-05-19 Circuit de commutation WO2000072433A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1999/002636 WO2000072433A1 (fr) 1999-05-19 1999-05-19 Circuit de commutation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1999/002636 WO2000072433A1 (fr) 1999-05-19 1999-05-19 Circuit de commutation

Publications (1)

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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004147472A (ja) * 2002-10-28 2004-05-20 Matsushita Electric Ind Co Ltd 太陽光発電用直流交流変換装置
JP2007082351A (ja) * 2005-09-15 2007-03-29 Toshiba Corp 電力変換装置
JP2008104282A (ja) * 2006-10-18 2008-05-01 Toshiba Kyaria Kk インバータ装置
WO2009116273A1 (fr) 2008-03-19 2009-09-24 三菱電機株式会社 Dispositif de conversion de puissance
JP2010098850A (ja) * 2008-10-16 2010-04-30 Daikin Ind Ltd インバータ及びインバータにおけるスイッチング制御方法
DE112010003664T5 (de) 2009-09-16 2012-08-02 Mitsubishi Electric Corporation Leistungsumwandlungsvorrichtung
EP2597767A2 (fr) 2011-11-25 2013-05-29 Mitsubishi Electric Corporation Onduleur et climatiseur comprenant celui-ci
CN103166615A (zh) * 2011-12-14 2013-06-19 三菱电机株式会社 功率半导体装置
CN103378757A (zh) * 2012-04-17 2013-10-30 三菱电机株式会社 功率转换装置
JP2014130909A (ja) * 2012-12-28 2014-07-10 Mitsubishi Electric Corp 電力用半導体装置
WO2014149562A3 (fr) * 2013-03-15 2015-04-23 Qualcomm Incorporated Convertisseurs de puissance à pont h à semi-conducteurs mixtes et procédés apparentés
WO2020043689A1 (fr) * 2018-08-30 2020-03-05 Brusa Elektronik Ag Dispositif adaptateur pour alimentation bidirectionnelle
EP2474092B1 (fr) * 2009-09-03 2020-04-29 DPM Technologies Inc. Système, appareil et procédé de configuration variable d'une bobine
WO2021166164A1 (fr) * 2020-02-20 2021-08-26 三菱電機株式会社 Dispositif de conversion de puissance et système d'alimentation d'avion
WO2023175909A1 (fr) * 2022-03-18 2023-09-21 三菱電機株式会社 Onduleur et véhicule électrique
US11923716B2 (en) 2019-09-13 2024-03-05 Milwaukee Electric Tool Corporation Power converters with wide bandgap semiconductors

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04354156A (ja) * 1991-05-31 1992-12-08 Fuji Electric Co Ltd 半導体スイッチング装置
JPH1022801A (ja) * 1996-07-04 1998-01-23 Toshiba Corp 制御素子保護回路
JPH10209832A (ja) * 1997-01-27 1998-08-07 Fuji Electric Co Ltd 半導体スイッチ回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04354156A (ja) * 1991-05-31 1992-12-08 Fuji Electric Co Ltd 半導体スイッチング装置
JPH1022801A (ja) * 1996-07-04 1998-01-23 Toshiba Corp 制御素子保護回路
JPH10209832A (ja) * 1997-01-27 1998-08-07 Fuji Electric Co Ltd 半導体スイッチ回路

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004147472A (ja) * 2002-10-28 2004-05-20 Matsushita Electric Ind Co Ltd 太陽光発電用直流交流変換装置
JP2007082351A (ja) * 2005-09-15 2007-03-29 Toshiba Corp 電力変換装置
JP2008104282A (ja) * 2006-10-18 2008-05-01 Toshiba Kyaria Kk インバータ装置
WO2009116273A1 (fr) 2008-03-19 2009-09-24 三菱電機株式会社 Dispositif de conversion de puissance
CN101978588A (zh) * 2008-03-19 2011-02-16 三菱电机株式会社 电力变换装置
JP5002706B2 (ja) * 2008-03-19 2012-08-15 三菱電機株式会社 電力変換装置
US8866342B2 (en) 2008-03-19 2014-10-21 Mitsubishi Electric Corporation Power converting apparatus
JP2010098850A (ja) * 2008-10-16 2010-04-30 Daikin Ind Ltd インバータ及びインバータにおけるスイッチング制御方法
EP2474092B1 (fr) * 2009-09-03 2020-04-29 DPM Technologies Inc. Système, appareil et procédé de configuration variable d'une bobine
DE112010003664T5 (de) 2009-09-16 2012-08-02 Mitsubishi Electric Corporation Leistungsumwandlungsvorrichtung
US8861235B2 (en) 2009-09-16 2014-10-14 Mitsubishi Electric Corporation Power converting apparatus
EP2597767A3 (fr) * 2011-11-25 2014-08-06 Mitsubishi Electric Corporation Onduleur et climatiseur comprenant celui-ci
AU2012254876B2 (en) * 2011-11-25 2014-03-20 Mitsubishi Electric Corporation Inverter device and air conditioner including the same
CN103138596A (zh) * 2011-11-25 2013-06-05 三菱电机株式会社 逆变器装置以及具备逆变器装置的空气调节器
US8884560B2 (en) 2011-11-25 2014-11-11 Mitsubishi Electric Corporation Inverter device and air conditioner including the same
EP2597767A2 (fr) 2011-11-25 2013-05-29 Mitsubishi Electric Corporation Onduleur et climatiseur comprenant celui-ci
JP2013125806A (ja) * 2011-12-14 2013-06-24 Mitsubishi Electric Corp 電力用半導体装置
CN103166615B (zh) * 2011-12-14 2016-06-29 三菱电机株式会社 功率半导体装置
US9106156B2 (en) 2011-12-14 2015-08-11 Mitsubishi Electric Corporation Power semiconductor device
CN103166615A (zh) * 2011-12-14 2013-06-19 三菱电机株式会社 功率半导体装置
CN103378757B (zh) * 2012-04-17 2015-11-18 三菱电机株式会社 功率转换装置
CN103378757A (zh) * 2012-04-17 2013-10-30 三菱电机株式会社 功率转换装置
JP2014130909A (ja) * 2012-12-28 2014-07-10 Mitsubishi Electric Corp 電力用半導体装置
WO2014149562A3 (fr) * 2013-03-15 2015-04-23 Qualcomm Incorporated Convertisseurs de puissance à pont h à semi-conducteurs mixtes et procédés apparentés
US9248751B2 (en) 2013-03-15 2016-02-02 Qualcomm Incorporated Mixed semiconductor H-bridge power converters and methods related thereto
WO2020043689A1 (fr) * 2018-08-30 2020-03-05 Brusa Elektronik Ag Dispositif adaptateur pour alimentation bidirectionnelle
US11532999B2 (en) 2018-08-30 2022-12-20 Brusa Hypower Ag Adapter device for bidirectional operation
US11923716B2 (en) 2019-09-13 2024-03-05 Milwaukee Electric Tool Corporation Power converters with wide bandgap semiconductors
WO2021166164A1 (fr) * 2020-02-20 2021-08-26 三菱電機株式会社 Dispositif de conversion de puissance et système d'alimentation d'avion
JPWO2021166164A1 (fr) * 2020-02-20 2021-08-26
WO2023175909A1 (fr) * 2022-03-18 2023-09-21 三菱電機株式会社 Onduleur et véhicule électrique

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