WO2000045459A1 - Circuit de filtre haute frequence - Google Patents

Circuit de filtre haute frequence Download PDF

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Publication number
WO2000045459A1
WO2000045459A1 PCT/JP2000/000466 JP0000466W WO0045459A1 WO 2000045459 A1 WO2000045459 A1 WO 2000045459A1 JP 0000466 W JP0000466 W JP 0000466W WO 0045459 A1 WO0045459 A1 WO 0045459A1
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WIPO (PCT)
Prior art keywords
dro
filter circuit
filter
parallel
bpf
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Application number
PCT/JP2000/000466
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English (en)
Japanese (ja)
Inventor
Kunio Tochi
Kiyoshi Mizushima
Original Assignee
Nikko Company
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Filing date
Publication date
Application filed by Nikko Company filed Critical Nikko Company
Priority to AU23212/00A priority Critical patent/AU2321200A/en
Publication of WO2000045459A1 publication Critical patent/WO2000045459A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/205—Comb or interdigital filters; Cascaded coaxial cavities
    • H01P1/2053—Comb or interdigital filters; Cascaded coaxial cavities the coaxial cavity resonators being disposed parall to each other

Definitions

  • the present invention relates to a filter circuit, particularly to a high-frequency filter circuit using a dielectric resonator (DRO) as a circuit element, a circuit element including the filter circuit, and a method of manufacturing the filter circuit element.
  • DRO dielectric resonator
  • Filter circuits that are relatively small and used in this band include laminated LC filters, surface acoustic wave (SAW) filters, and dielectric filters.
  • laminated LC filters include laminated LC filters, surface acoustic wave (SAW) filters, and dielectric filters.
  • SAW surface acoustic wave
  • the multilayer LC filter is made by printing wiring, inductors (L), and capacitors (C) according to the circuit configuration on a green sheet made of a dielectric material, firing this after lamination. Since the low-pass filter (LPF) of the stacked type has low power consumption, it is indispensable, for example, as a transmission filter inserted between the antenna and the transmitter to remove unnecessary waves (spurious). Also, a high-pass filter
  • S AW fill evening are quartz, lithium niobate (L i N B_ ⁇ 3), Tan lithium Tal acid (L i T A_ ⁇ 3) multiple pairs of interpolation to each other on the piezoelectric substrate or piezoelectric thin film such as An interdigital electrode (interdigital electrode: IDT) is formed by providing a powerful transducer.
  • IDT interdigital electrode
  • an electromagnetic wave signal is input to the SAW filter, it is converted into an acoustic signal by the input-side transducer, propagates on the crystal surface, is converted back into an electromagnetic wave signal by the output-side transducer, and is output.
  • the SAW filter is generally used in the intermediate frequency band of mobile terminals and base stations for mobile communication because it is easy to reduce the size and weight.
  • the propagation speed of the signal wave is basically an elastic wave (at most several thousand m / s depending on the crystal material and propagation mode used), so the SAW filter has various problems in principle. Contains.
  • the group delay time is significantly smaller than that in the SAW filter.
  • the CDMA method is the dominant next-generation mobile communication method. In the CDMA method, signal waves are encoded and spread over the entire bandwidth. Therefore, the flatness of the group delay time becomes more important as the bandwidth is widened. However, it is difficult in principle to achieve the required flatness of the group delay time with the SAW filter.
  • DRO filters are widely used as dielectric filters. As shown in Fig. 2, one or more dielectric resonators (DRO) 2 are placed on a substrate 1 and terminals 3 pulled out from the inner conductor (the inner surface of the resonator hole) of the DRO are connected to the substrate. Connected to the upper electrode 5. The outer conductor (outer surface) of the DRO is coupled to GND.
  • DRO dielectric resonators
  • the electrodes 5 are connected to each other on the substrate surface by a coupling capacitor 4a, and are also connected to the electrode 6 at the end of the substrate via a coupling capacitor 4b. .
  • Electrode 6 wraps around the back surface (see Fig. 2 (b)) and forms mounting terminal electrodes surrounded by insulating layer 7 as necessary. I do.
  • Fig. 3 shows a circuit diagram of a conventional DRO-type BPF.
  • the one-stage filter shown in Fig. 3 (a) has the basic structure, but a multi-stage BPF shown in Fig. 3 (b) is generally used.
  • Cc i etc. is the coupling capacitor 4 (4 a,
  • DRO-type BPFs have the advantages of low insertion loss, having an allowable power of several watts or more, and being able to handle high-frequency bands of 1 GHz or more. It is used.
  • the center frequency of the BPF is almost equal to the resonance frequency of the DRO. For this reason, the center frequency of the BPF can be set relatively freely by adjusting the length of the DR ⁇ .
  • a dielectric material with a high dielectric constant is applied to the DRO.
  • an intermediate frequency band (IF band) of 500 MHz or less is used.
  • the length of 0 shaku becomes 14 mm or more, and it cannot be designed with a dimension that is practically effective as a BPF for mobile terminals. For this reason, the applicable band is limited to the high-frequency band where the length of one wavelength is short, in spite of its excellent features.
  • DRO also requires high Q value and temperature stability.
  • 01 High ⁇ (3 values reduce the insertion loss of the BPF, and high temperature stability suppresses the temperature change of the center frequency. Therefore, in order to reduce the size and performance of the DR ⁇ type BPF, Materials that achieve high dielectric constant, Q value and temperature stability are required, but it is theoretically experienced that it is extremely difficult or impossible to satisfy these three conditions at a high level. It has also been suggested.
  • generation of harmonics is one of the problems of the 0 shaku type 8 PF. That is, in mobile communication equipment, etc., it is a general specification that harmonics are suppressed at least up to three times the center frequency of the BPF. Is low. As a result, for example, in the case of the above-mentioned PHS, etc., an LPF for removing harmonics is required after the BPF, which has reduced the advantage of the DRO-type BPF that the insertion loss is small.
  • the coaxial DRO shown in Fig. 2 also has manufacturing problems.
  • DR ⁇ shown in Fig. 2 is obtained by piercing a resonator hole along the axis in a prismatic dielectric core and firing it, and then sintering the inner surface of the resonator hole and the outer surface of the dielectric core.
  • a conductor layer is provided on the end face (excluding the end face), and one end of a bent conductor bar or plate is inserted into the resonator hole and connected to the conductor layer on the inner surface to form a terminal.
  • changes in properties due to shrinkage and deformation during firing are inevitable.
  • the characteristic impedance Z of the DRO Increasing the diameter is effective in improving the steepness of the BPF characteristic.
  • a resonator with a large outer diameter is not practical, and a resonator with a small inner diameter (less than 0.5 mm) is difficult to manufacture. Therefore, the characteristic impedance Z of a practical coaxial DRO. Is about 10 ⁇ , and there is a limit in improving the characteristics of the filter circuit using this.
  • a structure in which circuit elements are connected to the DRO in series or in parallel has also been proposed.
  • a circuit configuration in which a capacitance is connected in series with a DRO and an attenuation pole is provided on the low frequency side is known (for example, Japanese Patent Application Laid-Open No. 5-102707).
  • Japanese Patent Application Laid-Open No. 7-147503 a capacity or inductor and a switch are provided in parallel with A BPF that can be used as a duplexer that can switch the center frequency more is described.
  • Japanese Patent Application Laid-Open No. 7-147503 since a switch is provided on the GND side in the capacity, the effect of an increase in GND impedance cannot be avoided, and BPF characteristics cannot be obtained.
  • the measurement data includes the jig characteristics (insertion loss, reflection loss, crosstalk loss) and the time variation of measuring instrument accuracy.
  • these factors have been minimized by improving the characteristics of jigs, and the characteristics of the products themselves have been evaluated by comparison with data based on standard samples.
  • Such measurements are required for the measurement of advanced characteristics required for next-generation communication terminals, such as measurement of large attenuation, measurement of minute reflected power and insertion loss, and measurement in the quasi-millimeter wave band. It is beyond the limits of the method. For this reason, a new inspection method that can sufficiently respond to these advanced characteristics Is required. Disclosure of the invention
  • the present inventors have made it possible to apply a dielectric filter (DRO type filter) in a wide frequency range including an intermediate frequency range, where it has been considered that the SAW filter is overwhelmingly advantageous.
  • DRO type filter dielectric filter
  • (1) by connecting a capacitor in parallel with DR ⁇ ⁇ ⁇ it is possible to shift the center frequency of the DR ⁇ filter to a lower frequency side, which also has the effect of improving the characteristics.
  • the terminal inductance of the DRO has a large effect on the high-frequency characteristics, and by resolving this, a great effect can be obtained.
  • the present invention provides the following filter circuit, filter circuit element, and filter Provided is a method for manufacturing a circuit element.
  • a filter circuit comprising at least one bypass including a dielectric resonator (DRO) on a transmission line, wherein at least one of the bypasses has a capacity connected in parallel with the DRO. Filter circuit.
  • DRO dielectric resonator
  • the admittance of the DRO included in the bypass connecting the capacitor in parallel with the dielectric resonator (DRO) is set to a value different from the admittance of the DRO included in any of the other bypasses, and
  • the admittance of the capacity connected in parallel with the DRO is set to a value that eliminates the difference between the DR0 admittance and the admittance of each side road is set to the same value as described in 1 above. Phil evening circuit.
  • n is an integer of 2 or more
  • bypass circuits including a dielectric resonator (DRO) on the transmission line k of them (k is an integer of 1 or more and less than n)
  • DRO dielectric resonator
  • the admittance of the DRO included in the bypass to which the capacitor is not connected is set to a value different from the admittance of the DRO included in the bypass, and
  • the admittance of the capacity connected in parallel is set to a value that eliminates the difference between the DRO admittances, whereby the admittance of the n side roads is set to the same value. circuit.
  • the terminal of the dielectric resonator has a two-branch structure from the end of the DRO, and the two ends generated by the branch are inserted into the transmission line to directly connect the DRO to the transmission line.
  • the filter circuit according to any one of 1 to 3.
  • a filter circuit element including the filter circuit according to any one of 1 to 6 above. Child.
  • a method of manufacturing a filter circuit element comprising a step of dividing the substrate into individual filter circuit elements along the division line.
  • the method for manufacturing a filter circuit element according to the item 8 including a step of inspecting a plurality of filter circuits formed on the substrate with an aprober after the sealing step and before dividing the substrate.
  • FIG. 1 is a circuit diagram of a DRO-type BPF according to the present invention.
  • FIG. 2 is a circuit diagram schematically showing the structure of a conventional DRO-type BPF ((a) is a perspective view, and (b) is a back view).
  • FIG. 3 is a circuit diagram of a conventional DRO-type BPF.
  • FIG. 4 (a) is a circuit diagram that does not consider the terminal inductance of the DRO-type BPF
  • Fig. 4 (b) is a circuit diagram that considers the terminal inductance.
  • FIG. 5 is a circuit diagram of a DRO-type BPF schematically showing movement of a terminal inductance of DR ⁇ to a transmission line according to the present invention.
  • FIG. 6 is an end view schematically showing the structure of the split terminal type DR ⁇ .
  • FIG. 7 is a perspective view schematically showing a structure of a split terminal type DR ⁇ .
  • FIG. 8 (a) is a perspective view of a parallel plate type dielectric resonator that can be used in the present invention
  • FIG. 8 (b) is a cross-sectional view of an open-ended parallel plate type dielectric resonator
  • FIG. 8 (c) is a cross-sectional view of a parallel-plate type dielectric resonator with a short-circuited tip.
  • FIG. 9 (a) is a schematic diagram illustrating a balanced input / output configuration of a parallel plate type dielectric resonator that can be used in the present invention
  • FIG. 9 (b) is a schematic diagram illustrating an unbalanced input / output configuration. .
  • FIG. 10 is a circuit diagram of a BPF using a parallel plate type dielectric resonator.
  • FIG. 11 is a perspective view of a parallel-plate dielectric resonator of a continuously changing characteristic impedance type.
  • FIG. 12 (a) shows a conventional circuit configuration of the band rejection filter (BEP), and FIG. 12 (b) shows a corresponding circuit configuration example of the band rejection filter (BEP) of the present invention.
  • FIG. 13 (a) shows a balanced polar filter circuit having a pole on the low frequency side according to the present invention
  • FIG. 13 (b) shows a corresponding unbalanced polar filter circuit.
  • FIG. 14 (a) shows a balanced polar filter circuit having a pole on the high frequency side according to the present invention
  • FIG. 14 (b) shows a corresponding unbalanced polar filter circuit.
  • FIG. 15 is a schematic diagram showing an example of a duplexer configured by a combination of the circuit of FIG. 13 and the circuit of FIG.
  • FIG. 16 is a graph showing the transmission characteristics of a DRO-type BPF according to the present invention.
  • Fig. 17 is a graph showing the characteristics of DRO-type BPF.
  • Figure 18 is a graph showing the characteristics of a DRO-type BPF.
  • FIG. 19 is a graph showing characteristics of a DRO-type BPF according to the present invention.
  • FIG. 20 is a graph showing characteristics of a DR ⁇ BPF according to the present invention.
  • FIG. 21 is a graph showing the characteristics of a DR ⁇ type BPF according to the present invention.
  • Fig. 22 is a graph showing the characteristics of DRO-type BPF.
  • Fig. 23 is a graph showing the harmonic characteristics of the DRO-type BPF.
  • FIG. 24 is a graph showing the harmonic characteristics of the DR ⁇ BPF according to the present invention.
  • FIG. 25 is a graph showing the high-frequency characteristics of a multi-stage BPF in which the DR ⁇ specifications of each stage are changed according to the present invention.
  • FIG. 26 is a plan view schematically showing a configuration of a microwave band small filter according to the present invention.
  • FIG. 27 is a plan view schematically showing the configuration of the intermediate frequency band small filter according to the present invention.
  • FIG. 28 is a graph showing transmission characteristics of a 2.5 GHz optical communication clock extraction filter according to the present invention.
  • FIG. 29 is a schematic view illustrating a method for manufacturing a filter circuit according to the present invention. Detailed description of the invention
  • the present invention relates to a filter circuit comprising at least one bypass including a dielectric resonator (DRO) on a transmission line, wherein at least one of the bypasses includes a DRO and a DRO as shown in FIG. 1 (a).
  • DRO dielectric resonator
  • This is a filter circuit in which a capacity is provided in parallel. That is, in a filter circuit including a DRO in a bypass, a circuit portion including the DRO [when there are two or more such bypasses, the circuit portion in at least one bypass (see the next section). ] Is replaced with the circuit element of Fig. 1 (a). DRO can be either short-circuited or open.
  • the effect of lowering the center frequency and the effect of improving the out-of-band attenuation can be obtained. That is, there is an effect of the same property as the increase in the characteristic impedance of the dielectric resonator. Therefore, the characteristics can be improved by applying the present invention to the conventionally used DR ⁇ .
  • DR ⁇ composed of a dielectric material that has not been practically used due to poor dielectric constant, Q value or temperature stability can also be used.
  • dielectric materials that have not been put to practical use because of their high dielectric constant and Q value but poor temperature stability.However, such a dielectric material should be applied to DR ⁇ and temperature compensated by Cs.
  • the present invention can be applied to a multistage filter circuit.
  • a filter circuit provided with two or more bypasses including a dielectric resonator (DRO) on a transmission line, at least one of the bypasses is provided. And a filter circuit characterized by connecting a capacitor in parallel with the DRO.
  • DRO dielectric resonator
  • FIG. 1 (c) is an application of the present invention to the multi-stage BPF of FIG. 3 (b).
  • DR ⁇ 1 ⁇ DRO n in parallel with capacity C s ⁇ .
  • the DRO-type BPF has a multi-stage configuration that is connected via the inter-stage coupling capacity C C1 to C c n + 1 .
  • Fig. 1 (c) shows an example in which capacity is provided on all the sideways, but only k (l ⁇ k ⁇ n-1) of these sideways are parallel to the DRO. You may connect the capacity.
  • the multistage filter circuit according to the present invention configured as described above, it is possible to obtain excellent characteristics that cannot be realized by the conventional multistage filter circuit.
  • the following describes the multi-stage BPF shown in Fig. 3 (b) as an example.
  • the input admittance of each stage ⁇ ] [j is 1 to n.
  • the admittance is the center frequency F. Is the same as the admittance YDROj of the DR ⁇ of each stage, but if the specification of DR ⁇ of any stage is different from the others, different values will be mixed in ⁇ ”and the insertion loss will be Increase. Therefore, it is required that the DRQ of each stage has the same specifications, and that ⁇ ”, that is, YDRC ⁇ , be all equal.
  • the input admittance ⁇ ”of each stage is equal to the sum of the admittance YDROj of each stage DR ⁇ and the admittance Yes j of the parallel capacitor. Therefore, even if the DRO specification of one of the side roads is different from the others, the conditional expression: Yi-Ys Yg — ⁇ Yn can be satisfied by changing the specification of the capacity. In other words, it is possible to use different specifications of DRO and parallel capacity at each stage.
  • 1 Parallel capacity is provided on all side roads including DRO, and the admittance of DRO (or two or more) of one of the side roads is the admittance of DRO of other side roads.
  • Different values, and the difference in the admittance (2) If some sideways are included (for example, if there are n sideways, one or more and less than n sideways), a capacitor is provided in parallel with the DRO, and the admittance of these DROs Is different from the admittance of the DRO on the side road where no parallel capacity is provided.
  • DRO admittance is also different between the established side roads, and this includes the case where the difference in admittance is canceled by the admittance of the parallel capacity.
  • DROs and parallel capacitors having different specifications can be used in each stage, characteristics that cannot be realized by a conventional multi-stage filter using DROs having the same specifications can be obtained.
  • a BPF circuit in which harmonics are significantly suppressed or eliminated can be obtained.
  • the DRO of each stage has the same specifications, so the pole frequency of the BPF may be changed to a constant value with respect to the passband characteristics.
  • the pole frequency can be arbitrarily designed. Therefore, adjustment of the out-of-band attenuation and improvement of the steepness of the filter can be realized.
  • the conditions for this can be determined by simulations such as circuit analysis after setting parameters such as the applied frequency and the number of filter stages.
  • the BPF is described as an example, but the same applies to other types of filter circuits, for example, LPF, HPF, and BEP.
  • LPF low-pass filter circuit
  • HPF high-pass filter circuit
  • BEP BEP
  • the DRO includes a distributed constant line through which a TEM wave propagates.
  • the line ends may be short-circuited or open, and there is no limit on the number of resonant lines per DRO.
  • the structure of the DRO is not particularly limited except for a terminal structure and a parallel plate type dielectric resonator described later.
  • the tip of the DRO may be short-circuited or open.
  • the center frequency is shifted to the lower frequency side by about several hundred MHz or more by using the large capacity C s, that is, when the difference between the resonance frequency of the DRO and the center frequency of the BPF increases, as a result, the BPF characteristic becomes It was found that the BPF characteristics deteriorated due to the influence of the inductance of the DRO pin. That is, when the present invention is applied to a filter circuit using a DRO having a conventional terminal structure (for example, FIG. 2), for example, the circuit in FIG. 4 (a) [the circuit in FIG. 1 (b) It is necessary to consider the effect of the terminal inductance L as shown in Fig. 4 (b).
  • the DRO terminal has a two-branch (split) structure from the end of the DRO, and the branch end is inserted into the transmission line. In this way, DR ⁇ is connected directly to the transmission line.
  • a DR09 having a branch terminal 8 (8a and 8b) formed in a substantially V shape is used, and an electrode forming a part of a transmission line on a substrate 11 is used. Connect the terminals 8a and 8b to 10a and 10b, respectively.
  • Fig. 6 is an end view of a DRO with a circular cross-section where the inner conductor is installed so as to be substantially parallel to the substrate (support members etc. are omitted.). Other structures are possible as long as the signal is moved from the bypass to the transmission line.
  • FIG. 7 shows a configuration example using a microstrip line line.
  • electrode pads 14a and 14b are provided on both sides of the end of the inner conductor 12 and the input side and the output side of the transmission line are connected via wire pounds 18a and 18b, respectively. , I ZO.
  • the internal conductor 12 on the dielectric layer 16a may be covered with the dielectric layer 16b (the dielectric layer 16b is shown separated from the internal conductor 12 in the figure).
  • the dielectric layer 16b is shorter by a length (AL) corresponding to the electrode pads 14a and 14b, exposing the electrode pads.
  • the conductor layers 20a and 20b provided on the surfaces of the dielectric layers 16a and 16b, respectively, are connected to ground (GND).
  • Microstrip line is short Entanglement ⁇ It may be open.
  • a parallel plate type DRO can be used, which will be described later.
  • the center frequency depends on the DRO, coupling capacitance, number of filter stages, etc., but basically shifts to lower frequencies as Cs increases. Capacity of the subconnection, C s (or ⁇ 3 1-5 11), depending on the fill evening applications, generally 0. 5 pF or more, preferably 1 pF or more, more preferably from about 3 pF or more . Below the lower limit, the shift amount of the center frequency of the BPF is small (at most about ten and several MHz in the GHz band), and the meaning of lowering the frequency is poor. In addition, the effect of improving out-of-band attenuation and the like cannot be sufficiently obtained. The upper limit is not particularly limited.
  • C s may have any configuration, but is provided as a separate element outside the DRO in order to more effectively obtain the effects of the present invention.
  • the capacity is mounted on the DRO-mounted board as a capacity board, or a multilayer capacity board is applied to the DRO-mounted board to make the capacity Cs an inner layer.
  • Cs can also have the same branch terminal structure as the DRO. It has been difficult to accurately simulate the influence of the Cs terminal inductance on the bypass, but by moving the terminal inductance to the transmission line, a circuit analysis method using ordinary transmission equations can be used. The filter characteristics according to the design values can be realized.
  • a structure 36 in which a dielectric 34 is sandwiched between parallel conductor plates 30 and 32 as shown in FIG. 8 is useful as a dielectric resonator.
  • a structure 36 in which a dielectric 34 is sandwiched between parallel conductor plates 30 and 32 as shown in FIG. 8 is useful as a dielectric resonator.
  • open-ended type in which the bipolar plates are insulated (directly) [Fig. 8 (b)] or the short-circuited type in which the ends are connected [Fig. 8 (c)] may be used.
  • Such a structure is conventionally used as a dielectric resonator. Not.
  • a parallel plate dielectric resonator (referred to as a “parallel plate dielectric resonator” in this specification) has the following features.
  • a parallel plate type dielectric resonator can easily obtain a large characteristic impedance and can improve the sharpness of the filter. That is, Z.
  • the steepness of the filter circuit can be improved by increasing, the characteristic impedance Z that is practical for a coaxial DRO. was less than 10 ⁇ , and there was a limit in improving the characteristics.
  • coaxial type DRO it is possible to increase Z by increasing the outer diameter or decreasing the inner diameter. It is not impossible to make the inner diameter 10 ⁇ or more, but if the outer diameter is made larger, it is necessary to reduce the size, but reducing the inner diameter has problems in manufacturing technology and cost. Therefore, it is actually Z of DR ⁇ . There is a limit to the improvement of the steepness of the Phil Evening due to.
  • a parallel plate dielectric resonator can easily obtain a Zo of 10 ⁇ or more. If a dielectric with a dielectric constant of about 40 is used, 40 ⁇ or more is possible.
  • parallel plate dielectric resonators can be manufactured simply by cutting a dielectric substrate of an appropriate length with electrodes on both sides, so mass production is easy. In addition, no characteristic adjustment is required. Furthermore, terminals can be eliminated because they can be mounted directly on the substrate.
  • the filter circuit can be made balanced by using a parallel plate type dielectric resonator. That is, in general, when two high-frequency lines or devices are connected, not only the characteristic impedance at the connection point but also the distribution of the electromagnetic field must be the same.
  • LNA Low Noise Amps
  • Balanced high-frequency circuits are promising as the next-generation high-frequency circuit technology, and the BPF applied here also needs to be balanced.
  • balanced SAW filters are difficult to design and expensive. It is possible to convert the electromagnetic field mode of an unbalanced S AW filter to a balanced type by applying a balanced-unbalanced conversion circuit and apply it to a balanced high-frequency circuit. 5 to 7 are used. Therefore, this method hinders the miniaturization and cost reduction of the balanced high-frequency circuit, and is less practical.
  • the DRO terminal has the above-mentioned divided terminal structure in each stage, as shown by a broken line portion in the first stage.
  • a balanced circuit can be configured by modifying an unbalanced circuit to have a plane of symmetry.
  • Fig. 10 (b) shows the unbalanced circuit diagram corresponding to Fig. 10 (a).
  • the D RO in the unbalanced BPF may be a coaxial D RO or a parallel plate type dielectric resonator used in an unbalanced input / output configuration [Fig. 9 (b)].
  • the dimensions of the parallel plate type dielectric resonator are not particularly limited. However, in order to reduce the size of the entire filter, the thickness (distance between the electrode plates) is 1 mm or less, the width is 1 to 10 mm, and the length is 1 to 1 Omm.
  • the thickness is about 0.5 mm or less, the width is about 1 to 5 mm, and the length is about 1 to 5 mm.
  • the width of the parallel plate type dielectric resonator may be continuously changed in the length direction.
  • the characteristic impedance Z A unique DRO with a continuous change in the width direction is obtained.
  • the dielectric material and the electrode material are used in the conventional coaxial DR ⁇ , respectively. Material is available.
  • the electrode can be applied to the dielectric substrate by an existing method for applying a conductor layer, such as printing a thick film or forming a thin film.
  • the present invention can be applied to a filter circuit having a center frequency or a cutoff frequency in the range of several tens of MHz to 100 GHz.
  • FIG. 12 (a) shows a conventional circuit configuration of a band rejection filter (BEP)
  • FIG. 12 (b) shows a corresponding circuit configuration example of a band rejection filter (BEP) of the present invention.
  • the present invention is not limited to the modification of the conventional filter circuit.
  • FIGS. 1-10 Several examples of unique and useful circuit configurations of the present invention are shown in FIGS.
  • FIG. 13 and FIG. 14 are examples of a polar BPF.
  • the polar filter increases the amount of attenuation in a specific frequency region by providing a resonance point (pole) in the out-of-band region of the filter.
  • Fig. 13 is a circuit with increased low frequency attenuation
  • Fig. 14 is a circuit with increased high frequency attenuation.
  • FIGS. 13 (a) and 14 (a) show balanced circuit configurations.
  • BL-DRO means a balanced dielectric resonator. Can be used.
  • Figures 13 (b) and 14 (b) show the unbalanced circuit configuration.
  • FIG. 15 shows an example of a duplexer composed of a combination of the circuit of FIG. 13 and the circuit of FIG.
  • a mobile phone operates a reception frequency band and a transmission frequency band close to each other.
  • the transmission frequency band is assigned to 824 to 849 MHz
  • the reception frequency band is assigned to 869 to 894 MHz.
  • a duplexer is provided to separate (demultiplex) the received wave from the transmitted wave.
  • the circuit in FIG. 13 can be used as a receiving filter and the circuit in FIG. 14 can be used as a transmitting filter. Therefore, a duplexer can be configured by combining these circuits. Since the antenna is an unbalanced element, a balanced-unbalanced converter is required in the configuration of Fig. 15 (a) using a balanced BPF.
  • a synchronization signal extraction filter for 2.5 Gbps optical communication which was conventionally configured by inserting a 50 ⁇ coaxial DRO on a transmission line, is exemplified. This will be described in detail in an embodiment described later.
  • the element including the filter circuit according to the present invention can be manufactured by a known method, but is preferably manufactured by the method shown in FIG.
  • perforations 44 are formed along a boundary 42 that defines each region on the inorganic insulator substrate 40 [FIG. 29 (a)].
  • substrate materials include alumina, particularly 96 alumina containing 96% alumina by weight.
  • Inorganic dielectric materials other than alumina can also be used.
  • a laminated substrate using a material having a high dielectric constant is used. The thickness of the substrate is selected according to the dimensions of the substrate and the required strength. The dimensions and shape of the board are determined by the size of the elements to be mounted.
  • the perforations can be formed in any manner. For example, drilling with a laser beam Holes, drilling with a drill, and the like. It may be fired after punching the ceramic green sheet.
  • electrodes and conductor lines 46 are formed on the front surface of the substrate, and electrode terminals are formed on the back surface (not shown) of the substrate (FIG. 29 (b)).
  • a conductor may be printed, filled and / or plated in the perforations and used as through holes.
  • a perforation may be provided in the previous step in addition to the perforation for the boundary, and this may be used as a through hole.
  • These electrodes and conductor lines can be formed by, for example, thick film printing. If there is no firing step after electrode formation, highly accurate electrode formation by thin film formation and other metallization methods can be used.
  • the conductor material is a conventional one.
  • conductive base for thick film such as Ag, Ag-Pt, Ag-Pd, Au, Cu, Ni, etc.
  • thin film formation Examples include, but are not limited to, Au, Cu, Al, Ni, and the like.
  • electroless plating for example, electroless gold plating
  • Applying electroless gold plating has the effects of (1) improving wire bonding, (2) improving solderability, and (3) improving conductor resistance.
  • the parallel plate type dielectric resonator is particularly advantageous since it can be connected to the substrate without using terminals.
  • the parallel plate type dielectric resonator may have a parallel plate mounted perpendicular to the substrate surface, or may be mounted parallel to the substrate.
  • each substrate region is sealed [FIG. 29 (d)].
  • the sealing may be performed by resin sealing or a method of bonding a cap member.
  • the cap is used to house the element when it is brought into close contact with the surface of the substrate. What is necessary is just to have the shape and height which form the space of sufficient dimension.
  • Caps made of inorganic material, organic material, and metal can be used for sealing. Examples of inorganic materials include alumina and quartz glass, and examples of organic materials include plastic and epoxy, and examples of metal materials include iodine, phosphor bronze, and copper.
  • the cap member only needs to have sufficient strength as a protective member, but if a metal cap is applied, the high-frequency element will be surrounded by a good conductive material, and the cap can be grounded to GND. Almost perfect shielding effect can be obtained. Also, there is a high shielding effect without grounding.
  • a metal cap If a metal cap is used, it must be insulated from the conductor tracks on the substrate surface.
  • an insulating layer may be provided between the cap and the conductor line by thick film printing or the like.
  • an organic polymer resin layer may be provided on a portion of the substrate to be bonded to the cap to improve the adhesiveness of the cap and to simultaneously insulate the cap.
  • the module is separated into individual modules packaged on the substrate surface. Separation into individual chips can be performed by a conventional method such as sewing.
  • the method of dividing along the above-mentioned perforations is preferable, and the divided perforations can be used as a conductive portion to the back surface or a side electrode.
  • the aggregate substrate is divided while the edge of each substrate region is structurally reinforced by the bonding of the cap member, so that the stress at the time of division tends to concentrate on the division line, and the division is performed for each filter element region. Can be realized more reliably.
  • the inspection of the manufactured filter circuit can be made more efficient.
  • Wafer probers are widely used for precision measurement, intermediate inspection, and shipping inspection of semiconductor products, and include a test head, a probe card, and a stage that can be moved in the XY and vertical directions.
  • the probe force is a replaceable part attached to the test head, and includes a plurality of wires and a plurality of probe pins electrically connected to the wires.
  • the semiconductor wafer before being diced is placed on a stage, and the probe pins are brought into contact with the electrodes of the semiconductor products collectively formed on the wafer, so that a current flowing between the electrodes is obtained. Is measured, and defective products are identified by inspection of electrical characteristics.
  • the inspection method of the present invention is characterized by using a wafer prober, which is known as a semiconductor wafer inspection apparatus, but has not been used for inspection of a high-frequency filter.
  • a wafer prober which is known as a semiconductor wafer inspection apparatus, but has not been used for inspection of a high-frequency filter.
  • the above-mentioned collective substrate is placed on the stage of a wafer prober with the device mounting area side down, and probe pins are brought into contact with the electrodes on the back surface of the substrate to test individual high-frequency devices. . Before mounting the device, various inspections can be performed on the front side of the board.
  • a semiconductor wafer inspection method using a wafer prober can be used almost as it is.
  • Wafer prober inspection processing capacity is 1 per product area even in precision measurement No more than a second.
  • a multi-prober may be applied to simultaneously detect a plurality of high-frequency circuit elements. In this case, the inspection time per product area is reduced to 1/2 to 1/3 seconds.
  • the calibration up to the probe tip can be performed by using the calibration substrate.
  • the intrinsic characteristics of the product can be accurately measured. It is also easy to inspect temperature characteristics. Quality assurance of temperature characteristics has always been a major problem in ceramic electronic components. If inspections other than room temperature were to be performed using automatic inspection equipment that used conventional large-sized transport equipment, the entire inspection system would need to be in a constant temperature Major changes, such as keeping the data, were not practical.
  • a wafer probe is a small device that can be carried around and can be calibrated at the probe level such as S-LT (short-open-load-through) calibration. Measurement can be performed easily.
  • DR ⁇ is outer diameter 4mm x inner diameter 2mm x length 9.3mm Z.
  • a product with Q value: 169 (Ag 10%) the circuit configuration shown in Table 1 in Fig. 1 (b) (The meaning of symbols such as C sl C cl etc.) Obeys the notation in Fig. 1 (b).)
  • the two-stage filter circuit BPF13 and the three-stage filter circuit BPF45 were manufactured.
  • the terminal structure of DR ⁇ is the same as the conventional DRO-BPF circuit.
  • the BPF 13 has the same configuration except that the value of Cs is changed to 0 pF 3.0 pF 5.9 pF, and each has a bandwidth of 25 MHz.
  • BPFs 4 and 5 have the same configuration except that the value of Cs is changed to 0 pF 2.8 pF, and have a bandwidth of 22 MHz.
  • the center frequency, insertion loss, attenuation, and in-band voltage standing wave ratio (VSWR Peak-Peak value (hereafter, VSWRp-p)) were measured. Table 2 summarizes the results.
  • the following example shows an example in which the present invention is applied to a relatively small (5 mm long) DRO to improve its characteristics.
  • Table 4 summarizes the measurement results of the center frequency, insertion loss, attenuation, and in-band voltage standing wave (VSWRp-p) for each of these circuits.
  • the effect of shifting the center frequency by about 200 MHz while maintaining the bandwidth and improving the out-of-band attenuation is obtained.
  • the out-of-band attenuation on the low frequency side has been significantly improved.
  • DRO uses the product of the same specification as in Example 2, Ri by to the circuit configuration shown in Table 5 (means of symbols, such as C sl, etc., and C cl follow the notation in FIG. 1 (b).) DRO-BPFs 8 to 12 in a two-stage configuration were manufactured. The BPF was designed so that Cs and Cc would have a bandwidth of several tens of MHz in order to compare the differences in characteristics under the same conditions. However, BPF 9 is an example of a wideband BPF using a conventional terminal. Table 5
  • Table 6 summarizes the measurement results of the center frequency, insertion loss, attenuation, and in-band voltage standing wave ratio (VSWRp-p) for each of these circuits.
  • the measurement results of harmonics (FQ ') are also shown. Also shows the pass band characteristic [S 21 (logarithmic value)] a in FIG. 16.
  • the bold solid line represents the characteristics of BPF 10
  • the thin solid line represents the characteristics of BPF 11
  • the dashed line represents the characteristics of BPF 12.
  • the center frequency of the BPF is reduced to 500 MHz or less by connecting Cs of 40 pF, and the DRO having practical outer dimensions (outer diameter 2 mm ⁇ inner diameter 4 mm ⁇ length 5.8 mm) is used. Use in intermediate frequency band
  • the DR ⁇ type BPF that can be used has been realized.
  • DRO uses the product of the same specification as in Example 3, also, by respectively similar to DRO- BPF 8 12 As shown in C sl C cl like also Table 7, the DR_ ⁇ as shown in FIG. 5 A DRO-BPF 1317 with the same specifications as in Example 3 was manufactured except that the terminal inductance was moved to the transmission line.
  • FIG. 1721 shows the characteristics of each of the BPFs 1317.
  • a S 21 (logarithm: Log Mag S2 1) as passing characteristic of the BPF shows a
  • B represents the SWR as a standing wave ratio
  • C is showed DEL AYS 21 as the group delay characteristics .
  • Group delay is the transmission time required for a signal wave to pass through a measurement sample.
  • Fig. 22 shows the passband characteristics of BPFs 8 and 9 with the same DRO terminal structure as before and without Cs connection (Fig. 22 dashed line: BPF 8, Fig. 22 solid line: BPF 9).
  • Fig. 23 shows the characteristic curves of BPFs 13 and 14 similar to those except that the DRO terminal structure was divided, but when Cs was not connected, the characteristics in the pass band were the same as those of the conventional terminal structure and the divided type. No difference is seen between the terminal structure.
  • the resonance frequency of the DRO and the center frequency of the BPF are almost the same. This is because when the inductance of the DRO terminal is located on the side road, the terminal impedance can be ignored because the impedance of DR ⁇ becomes infinite near the resonance frequency of DR ⁇ . On the other hand, in the frequency range away from the resonance frequency, the effect of the terminal impedance becomes stronger. As a result, the pass band characteristics deteriorate in BPF 10 to 12, but the DR In Example 4 in which the inductance of the O terminal was moved to the transmission line, it is considered that the influence of the terminal impedance was reduced or eliminated and the passband characteristics were improved.
  • FIG. 24 shows the harmonic characteristics of the BPFs 13 and 15 to 17 (broken line in FIG. 24: BPF 13, thick solid line in FIG. 24: BPF 15, thin solid line: BPF 16, thick broken line: BPF 17).
  • the harmonic frequency F that appears in the figure. 'And F.
  • the ratio increases with an increase in C s as shown in Table 8. That is, the higher harmonics are used by using the large capacity Cs.
  • an LPF is generally used in order to remove a harmonic, but the LPF becomes unnecessary due to the large capacity of Cs in the present invention.
  • Table 9 shows the main characteristics of BPF 17 according to the present invention in comparison with SAW filters.
  • the SAW filter that is being compared here is a BPF developed for the latest CDMA, with dimensions of 11.5mmX 5. OmmX thickness 1.9mm.
  • the BPF 17 of the present invention not only has no inferior items in electrical characteristics, but also exhibits excellent characteristics of two or more digits in bandwidth; and three or more digits in group delay characteristics.
  • BPF 17 has a surface area ratio of about 12, and outperforms S AW Filler in external dimensions.
  • the dielectric material composing the DRO used for the BPF 17 has a dielectric constant of about 110, but if the latest high-frequency dielectric material with a dielectric constant of 200 is used, a smaller BPF can be manufactured. It is possible.
  • the following example shows that in a multi-stage BPF in which a capacitor is provided in parallel with a DRO according to the present invention, unique characteristics can be obtained by using different specifications for each DR ⁇ and capacity.
  • a graph of the high frequency characteristics of this circuit is shown by a solid line in FIG. In the drawing, the high-frequency characteristics of the BP 17 are also indicated by broken lines.
  • the pole frequency of the BPF 18 has been reduced from 1.5 GHz to 1.1 GHz as compared to the BPF 17.
  • Mobile phone receivers generally use the superheterodyne system, which generates an image signal in principle.
  • the receiving filter must have a characteristic that suppresses the image signal by 70 dB. Due to the strict characteristics, applicable design techniques are limited and many cutting-edge technologies are being used.
  • the pole frequency can be arbitrarily designed. At the pole, the input impedance of the dielectric resonator is almost zero, so that an attenuation close to infinity is obtained, and it is easy to suppress the image signal by 70 dB.
  • the present invention when the present invention is applied to a BPF circuit, If the DRO and the parallel capacity are selected so that the frequency of occurrence and the frequency of the pole coincide, the image signal can be suppressed despite a simple circuit configuration.
  • the parallel capacity is adjusted so that the input admittance of each stage becomes the same at the center frequency of the BPF, the above object can be achieved without deterioration of the passband characteristics such as increase in insertion loss. .
  • this example shows an example of the characteristics obtained by changing the specifications of the DRO in each stage by the method of the present invention, and other characteristics can be realized as necessary.
  • Conductive paste (Ag) is applied to both sides of a dielectric substrate (dielectric constant: 110) with a thickness of 5 mm, fired, and then sewn. Manufacture vessels.
  • a rectangular area is provided on a 96mm alumina substrate of 75mm x 75mm, assuming a filter element of 3.8mm in length and width.
  • Through-holes are provided along the boundaries between the regions and at the positions required for the wiring on the front and back, and parallel-plate dielectric resonators, coupling capacitors, and parallel capacitors are mounted on the substrate surface (Fig. 26). Then, a two-stage BPF circuit shown in FIG. 1 (c) is formed.
  • each area is sealed with resin, and the terminals of the prober are sequentially brought into contact with the electrode terminals on the rear surface, and the filter characteristics are inspected. After 100% inspection, the device is divided along the division line to obtain a microwave band small filter device.
  • Microwave band small filter with excellent out-of-band attenuation of 70 dB at center frequency 2.14 GHz, bandwidth 60 MHz, and 2.52 GHz by the above manufacturing method Properties can be manufactured.
  • the insertion loss is less than I dB and the group delay time is less than Ins.
  • Conductive paste (Ag) is applied to both sides of a dielectric substrate (dielectric constant: 110) with a thickness of 1.0 mm, fired, and then sewn to form a parallel plate type dielectric resonator with a width of 1. OmmX and a length of 6.5 mm. To manufacture.
  • the capacity of the parallel capacity is required to be about 800 pF in order to manufacture an intermediate frequency band filter with a center frequency of about 80 MHz. Therefore, a multilayer substrate with an internal parallel capacitor is manufactured by sintering a high dielectric constant ceramic material (dielectric constant 180) at low temperature, and the composite capacitor and the parallel plate type dielectric of (1) are formed on this substrate. A resonator is mounted (Fig. 27). The manufacturing method and the inspection method are the same as in the sixth embodiment.
  • an intermediate frequency band filter smaller than the SAW filter can be realized. Specifically, excellent characteristics with a center frequency of 210 MHz, a bandwidth of 1.3 MHz, and an attenuation of 35 dB can be realized.
  • phase linearity and group delay characteristics are improved by two orders of magnitude compared to the current state-of-the-art S AW filter.
  • the following example shows an example of manufacturing a 2.5 GHz optical communication clock extraction filter using a parallel-plate dielectric resonator with a large characteristic impedance.
  • a parallel plate type dielectric resonator with a short-circuited tip in this frequency band When the filter for extracting the hook is designed, the length of the resonator becomes short at 2.5 mm, making it difficult to handle. Therefore, an open-ended parallel plate resonator was used.
  • a 2mm wide x 5.5mm parallel plate dielectric resonator (characteristic impedance: 30 ⁇ ) is cut by applying electrodes to both sides of a lmm-thick dielectric substrate (dielectric constant: 40) and cutting it.
  • dielectric constant: 40 dielectric constant
  • FIG. 28 shows the transmission characteristics.
  • the obtained filter has the required characteristics (center frequency: 2.5 GHz, insertion loss: 8 d) with a volume of 1/100 (thickness: 2 mm, width: 4 mm, length: 7 mm) of the conventional product. B or less, reflection loss: 13 dB or less, bandwidth (Q value): 600 or more, temperature characteristic: 2.5 ppm / t :).
  • Optical digital signals are greatly distorted by medium- and long-distance transmission of optical fibers. Therefore, in the receiving unit, after conversion from the optical digital signal to the electric digital signal, only the synchronization signal is extracted by BPF and the waveform is shaped.
  • This filter requires narrow-band characteristics and high temperature stability. Conventionally, a coaxial resonator and a dedicated filter circuit have been used, but the external dimensions are large because the resonator is long.
  • the synchronous signal extraction filter according to the present invention is a filter that solves such a problem.
  • the present invention achieves high performance (for example, improvement of out-of-band attenuation and steepness, suppression of harmonics) and downsizing of a DRO filter circuit. Therefore, it is useful in various filter circuits and circuits and devices including the filter circuit in the GHz band.
  • the present invention provides a DRO-type filter circuit that does not cause a product size problem even in an intermediate frequency band where SAW filters have been overwhelmingly superior. Enable application. Therefore, it is possible to provide a high-performance filter circuit that is suitable for use in terminals and base stations in mobile communications such as mobile phones, and that can respond to an increase in the amount of information transmission that is expected to be difficult with a SAW filter. Becomes

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Abstract

La présente invention concerne un circuit de filtre prévue sur une ligne de transmission ayant au moins un contournement comportant un résonateur diélectrique (DRO) caractérisé en ce que le condensateur est relié en parallèle avec le résonateur diélectrique sur au moins un des contournements, permettant ainsi d'utiliser un type de circuit de filtre ayant un résonateur diélectrique de petite taille à rendement amélioré (atténuation et raideur de gradient hors-bande améliorées et suppression d'harmonique); et un circuit de filtre à haute performance de bande de fréquence intermédiaire capable de s'adapter à une croissance dans la transmission d'informations qui est normalement difficilement adaptable par un filtre à ondes de surface.
PCT/JP2000/000466 1999-01-28 2000-01-28 Circuit de filtre haute frequence WO2000045459A1 (fr)

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AU23212/00A AU2321200A (en) 1999-01-28 2000-01-28 High frequency filter circuit

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JP11/20568 1999-01-28
JP2056899 1999-01-28

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10476479B2 (en) 2017-04-10 2019-11-12 Samsung Electro-Mechanics Co., Ltd. Filter and filter module

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5711803U (fr) * 1980-06-20 1982-01-21
JPS6054502A (ja) * 1983-09-05 1985-03-29 Matsushita Electric Ind Co Ltd 共振器の製造方法
JPH0318104A (ja) * 1989-06-15 1991-01-25 Nomura Denki Kk 同軸型誘電体共振装置及びそのインダクタンス調整方法
JPH06260807A (ja) * 1993-03-08 1994-09-16 Taiyo Yuden Co Ltd 高周波フィルタ
US5515017A (en) * 1993-11-24 1996-05-07 Murata Manufacturing Co., Ltd. Selectable frequency dielectric filter having a ganged relation output switch
JPH08288706A (ja) * 1995-04-12 1996-11-01 Soshin Denki Kk 積層型誘電体フィルタ
JPH0918202A (ja) * 1995-06-27 1997-01-17 Fuji Elelctrochem Co Ltd 積層誘電体フィルタ及びその製造方法
JP2000022404A (ja) * 1998-07-07 2000-01-21 Ngk Insulators Ltd 積層型誘電体フィルタ及び高周波回路基板

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5711803U (fr) * 1980-06-20 1982-01-21
JPS6054502A (ja) * 1983-09-05 1985-03-29 Matsushita Electric Ind Co Ltd 共振器の製造方法
JPH0318104A (ja) * 1989-06-15 1991-01-25 Nomura Denki Kk 同軸型誘電体共振装置及びそのインダクタンス調整方法
JPH06260807A (ja) * 1993-03-08 1994-09-16 Taiyo Yuden Co Ltd 高周波フィルタ
US5515017A (en) * 1993-11-24 1996-05-07 Murata Manufacturing Co., Ltd. Selectable frequency dielectric filter having a ganged relation output switch
JPH08288706A (ja) * 1995-04-12 1996-11-01 Soshin Denki Kk 積層型誘電体フィルタ
JPH0918202A (ja) * 1995-06-27 1997-01-17 Fuji Elelctrochem Co Ltd 積層誘電体フィルタ及びその製造方法
JP2000022404A (ja) * 1998-07-07 2000-01-21 Ngk Insulators Ltd 積層型誘電体フィルタ及び高周波回路基板

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10476479B2 (en) 2017-04-10 2019-11-12 Samsung Electro-Mechanics Co., Ltd. Filter and filter module

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