WO2000036037A1 - Compositions et procedes de polissage de plaquettes de semi-conducteurs - Google Patents
Compositions et procedes de polissage de plaquettes de semi-conducteurs Download PDFInfo
- Publication number
- WO2000036037A1 WO2000036037A1 PCT/US1999/030154 US9930154W WO0036037A1 WO 2000036037 A1 WO2000036037 A1 WO 2000036037A1 US 9930154 W US9930154 W US 9930154W WO 0036037 A1 WO0036037 A1 WO 0036037A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- amino alcohol
- abrasive particles
- polishing
- tris
- amino
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 25
- 239000000203 mixture Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 235000012431 wafers Nutrition 0.000 title description 8
- 150000001414 amino alcohols Chemical class 0.000 claims abstract description 19
- 239000002245 particle Substances 0.000 claims abstract description 18
- 239000006185 dispersion Substances 0.000 claims abstract description 15
- 230000002452 interceptive effect Effects 0.000 claims abstract description 8
- 229920000620 organic polymer Polymers 0.000 claims abstract description 8
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001868 water Inorganic materials 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 6
- 229920000642 polymer Polymers 0.000 claims abstract description 6
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 30
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- XRIBIDPMFSLGFS-UHFFFAOYSA-N 2-(dimethylamino)-2-methylpropan-1-ol Chemical compound CN(C)C(C)(C)CO XRIBIDPMFSLGFS-UHFFFAOYSA-N 0.000 claims description 5
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims description 5
- 239000000908 ammonium hydroxide Substances 0.000 claims description 5
- 229940058020 2-amino-2-methyl-1-propanol Drugs 0.000 claims 1
- 239000002002 slurry Substances 0.000 abstract description 30
- 239000000654 additive Substances 0.000 abstract description 7
- 230000000996 additive effect Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 11
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 9
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 6
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910021485 fumed silica Inorganic materials 0.000 description 3
- -1 hydroxy, carboxy, carbonyl Chemical group 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical group O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 2
- 125000005499 phosphonyl group Chemical group 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229940068984 polyvinyl alcohol Drugs 0.000 description 2
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
Definitions
- the present invention relates to compositions which are useful as slurries used during the chemical mechanical polishing of substrates, especially those comprised of silica, silicates or silicon nitride.
- CMP chemical-mechanical polishing
- a slurry is used in conjunction with a polishing pad to facilitate the removal of an insulator or dielectric material.
- this insulating or dielectric material is SiO 2
- H 2 O hydration reaction
- Dissolution of this network generally occurs above a pH of 9.0 because of the solubility of the reaction product at high pH.
- a high pH is desirable to achieve a high removal rate.
- Silicon Nitride while chemically dissimilar to SiO 2 , has shown generally similar polishing behavior.
- formulations shown to be suitable for the polishing of SiO 2 are also effective for silicon nitride, albeit at lower rates.
- bases such as KOH and N ⁇ UOH are used to yield a pH of 10-1 1 in commercial production of polishing slurries useful for CMP of insulating layers.
- Yu et al. in USP 5,244,534 describe a CMP step for removing insulation material from around a metal plug.
- an oxide insulation material such as SiO
- etchants selective to the oxide
- It is an object of this invention to provide dispersions of silicon dioxide which do not gel or settle out and, if there is sedimentation, that the sediment be easily redispersed.
- a further object of this invention is to provide slurries useful for the chemical-mechanical polishing of insulation layers on semiconductor wafers which are stable and provide a high quality surface for the semiconductor wafers upon polishing.
- Stable dispersions of submicron abrasive particles are provided by using an amino alcohol as a stabilizing component.
- a composition suitable for polishing an insulating or barrier layer, comprising: water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component which interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide.
- the composition provided is most useful when the pH of the composition is adjusted to between 9 and 12.
- a polymer additive for a CMP slurry which provides a polished surface with less surface roughness and fewer scratches than when the slurry is used without such an additive is another aspect of this invention.
- the additive is defined as an organic polymer having a degree of polymerization of at least five comprising a plurality of moieties having affinity to surface groups contained on insulating layer surfaces. These groups are commonly polar moieties, such as, but not limited to, hydroxy, carboxy, carbonyl, alkoxy, sulphonyl, and phosphonyl.
- Examples of this type of molecule include poly-vinyl alcohol, poly-vinylpyrrolidone, poly-methyl methacrylate, poly- formaldehyde, poly-ethylene oxide, poly-ethylene glycol, and poly-methacrylic acid.
- This additive is disclosed in Patent Application Serial Number 09/329,225 which is made a part of this specification by reference. In the previous application, the additive was made a part of the CMP slurry to provide silica rate suppression.
- the polymer additive in the present invention provides a polished surface with less surface roughness and fewer scratches.
- a further aspect of the present invention is a process for polishing insulating layers in which the slurry, used in combination with a standard polishing machine and a polishing pad, is comprised of water, an aqueous dispersion of submicron abrasive particles for which an amino alcohol is used as a stabilizing component, and a chemically interactive component that interacts with the surface being polished.
- the composition provided is most useful when the pH of the composition is adjusted to between 9 and 12.
- a further aspect of the present invention is a process for CMP of a semiconductor wafer in which the slurry, used in combination with a standard polishing machine and a polishing pad, comprises an organic polymer having a degree of polymerization of at least five with a plurality of moieties having affinity to surface groups contained on insulating layer surfaces.
- hydroxides such as potassium hydroxide, ammonium hydroxide, and sodium hydroxide, and amines have been used as dispersing agents for CMP slurry abrasives. It has been found that a class of compounds known as amino alcohols provide excellent dispersion results both in the predispersed abrasive concentrates and in the CMP slurry compositions which are made from the predispersed abrasive concentrates.
- the above amino alcohols may be obtained from ANGUS Chemical Company, Buffalo Grove, IL.
- the above compounds are: AMP, 2-amino-2-methyl-l-propanol; DMAMP, 2-dimethylamino-2-methyl- 1 -propanol; and TRIS AMINO ® , tris(hydroxymethyl)aminomethane.
- Amino alcohols are defined as organic compounds which contain at least one amino group and one hydroxyl group.
- amino alcohols may be used at 0.01% to 10% by weight in the aqueous dispersions of submicron abrasive particles according to this invention.
- Submicron abrasive particles which might be stabilized with the amino alcohols include, but are not limited to, silica, ceria, alumina, titania, and silica gel.
- the submicron abrasive particles should have a primary particle size in the range of 5 nanometers to 100 nanometers. Primary particle size can be determined by TEM imaging where the smallest particles are measured even if shown as part of an agglomeration.
- the stabilized abrasive particles of this invention must have along with them a chemically interactive component that interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide.
- a chemically interactive component that interacts with the surface being polished, such as potassium hydroxide or ammonium hydroxide.
- Table 2 illustrates this fact, plus the fact that the addition of a small amount of a compound may provide a polished surface with less surface roughness and fewer scratches than when the slurry is used without such a compound.
- This compound is defined as an organic polymer having a degree of polymerization of at least five with a plurality of moieties having affinity to surface groups contained on insulating layer surfaces.
- These groups are commonly polar moieties, such as, but not limited to, hydroxy, carboxy, carbonyl, alkoxy, sulphonyl, and phosphonyl.
- Examples of this type of molecule include poly-vinyl alcohol, poly-vinylpyrrolidone, poly-methyl methacrylate, poly-formaldehyde, poly-ethylene oxide, poly-ethylene glycol, and poly- methacrylic acid.
- PVP poly-vinylpyrrolidone
- Example 2 the polishing tests on TEOS wafers shown in Table 2 were carried out on a Strasbaugh 6DS-SP polisher under the following conditions: Time, 120 sec; Down force, 7 psi; Back pressure, 0.5 psi; Platen speed, 51 rpm; Carrier speed, 41 rpm; Temperature, ambient; Slurry flow, 125 ml/min; Slurry dilution ratio, 1 :1 with DI water; Pad type, conventional urethane pad. Table 2
- A-70 fumed silica powder with a surface area of 70 - 100 m /g
- PVP poly-vinylpyrrolidone
- A-130 fumed silica powder with a surface area of 120 - 140 m /g
- the table also shows the improvement in surface roughness which occurs upon addition of an organic polymer (PVP) to a CMP slurry.
- the surface measurements were obtained using an Atomic Force Microscope (AFM) available from Digital Instruments, Inc. Using the tapping mode, a silicon tip, and a measurement area of 10 microns by 10 microns, the root mean square (RMS) roughness and the peak to valley (P-V) roughness were determined. Surface condition can be observed from the images provided by the AFM.
- Figures 1 to 4 show AFM images of the wafer surfaces after polishing with slurries G, H, L, and M. These images dramatically show the improvement in surface condition when using an organic polymer in the slurries. Such a polymer would typically be used in concentrations of 0.01% to 5% in the slurries of this invention.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
La présente invention concerne des dispersions stables de particules abrasives submicroniques utilisant un alcool aminé comme agent de stabilisation. La composition de l'invention, qui convient au polissage d'une couche barrière ou isolante, comprend de l'eau, une dispersion aqueuse de particules abrasives submicroniques pour laquelle on utilise comme agent de stabilisation un alcool aminé, et un composant chimiquement inerte qui interagit avec la surface à polir. L'invention concerne aussi un additif destiné aux suspensions de polissage mécanico-chimique (CMP) qui est un polymère organique présentant un degré de polymérisation d'au moins cinq, ce polymère possédant une pluralité d'entités qui présentent une affinité avec des groupes de surfaces de la surface à polir.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11260198P | 1998-12-17 | 1998-12-17 | |
| US60/112,601 | 1998-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2000036037A1 true WO2000036037A1 (fr) | 2000-06-22 |
Family
ID=22344818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1999/030154 WO2000036037A1 (fr) | 1998-12-17 | 1999-12-17 | Compositions et procedes de polissage de plaquettes de semi-conducteurs |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2000036037A1 (fr) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002061008A2 (fr) * | 2001-01-16 | 2002-08-08 | Cabot Microelectronics Corporation | Systeme de polissage contenant un metal alcalin et procede associe |
| US6432826B1 (en) | 1999-11-29 | 2002-08-13 | Applied Materials, Inc. | Planarized Cu cleaning for reduced defects |
| US6451697B1 (en) | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Method for abrasive-free metal CMP in passivation domain |
| US6524167B1 (en) | 2000-10-27 | 2003-02-25 | Applied Materials, Inc. | Method and composition for the selective removal of residual materials and barrier materials during substrate planarization |
| US6569349B1 (en) | 2000-10-23 | 2003-05-27 | Applied Materials Inc. | Additives to CMP slurry to polish dielectric films |
| US6592742B2 (en) | 2001-07-13 | 2003-07-15 | Applied Materials Inc. | Electrochemically assisted chemical polish |
| US6638143B2 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Ion exchange materials for chemical mechanical polishing |
| US6653242B1 (en) | 2000-06-30 | 2003-11-25 | Applied Materials, Inc. | Solution to metal re-deposition during substrate planarization |
| US6743737B2 (en) | 1998-11-04 | 2004-06-01 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
| US6811470B2 (en) | 2001-07-16 | 2004-11-02 | Applied Materials Inc. | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates |
| US6916742B2 (en) | 2003-02-27 | 2005-07-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Modular barrier removal polishing slurry |
| US7022608B2 (en) | 2000-12-01 | 2006-04-04 | Applied Materials Inc. | Method and composition for the removal of residual materials during substrate planarization |
| US7063597B2 (en) | 2002-10-25 | 2006-06-20 | Applied Materials | Polishing processes for shallow trench isolation substrates |
| US7199056B2 (en) | 2002-02-08 | 2007-04-03 | Applied Materials, Inc. | Low cost and low dishing slurry for polysilicon CMP |
| US7210988B2 (en) | 2004-08-24 | 2007-05-01 | Applied Materials, Inc. | Method and apparatus for reduced wear polishing pad conditioning |
| US7220322B1 (en) | 2000-08-24 | 2007-05-22 | Applied Materials, Inc. | Cu CMP polishing pad cleaning |
| US7504018B2 (en) | 2005-10-31 | 2009-03-17 | Applied Materials, Inc. | Electrochemical method for Ecmp polishing pad conditioning |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU516728A1 (ru) * | 1973-06-08 | 1976-06-05 | Харьковский Ордена Ленина Политехнический Институт Им. В.И.Ленина | Паста дл притирки и доводки деталей |
| SU608823A1 (ru) * | 1976-10-11 | 1978-05-30 | Предприятие П/Я Р-6324 | Состав дл доводки полированных металлических поверхностей |
| US4169337A (en) * | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
| US4284533A (en) * | 1977-11-28 | 1981-08-18 | Kao Soap Co., Ltd. | Liquid abrasive-containing cleanser composition |
| US4462188A (en) * | 1982-06-21 | 1984-07-31 | Nalco Chemical Company | Silica sol compositions for polishing silicon wafers |
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-
1999
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|---|
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| DATABASE WPI Derwent World Patents Index; AN 1979-29172B, BAGDASAROV ET AL.: "Aqueous polishing composition for metallic, e.g. copper, mirrors-contains diamond powder and also ammonia and hydroxyalkylated aminoalcohol, used for optical instruments" * |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743737B2 (en) | 1998-11-04 | 2004-06-01 | Applied Materials, Inc. | Method of improving moisture resistance of low dielectric constant films |
| US7104267B2 (en) | 1999-11-29 | 2006-09-12 | Applied Materials Inc. | Planarized copper cleaning for reduced defects |
| US6432826B1 (en) | 1999-11-29 | 2002-08-13 | Applied Materials, Inc. | Planarized Cu cleaning for reduced defects |
| US6638143B2 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Ion exchange materials for chemical mechanical polishing |
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