WO2000024094A1 - Gestion et utilisation de l'emission spontanee amplifiee dans un amplificateur optique - Google Patents

Gestion et utilisation de l'emission spontanee amplifiee dans un amplificateur optique Download PDF

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Publication number
WO2000024094A1
WO2000024094A1 PCT/US1999/021502 US9921502W WO0024094A1 WO 2000024094 A1 WO2000024094 A1 WO 2000024094A1 US 9921502 W US9921502 W US 9921502W WO 0024094 A1 WO0024094 A1 WO 0024094A1
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WO
WIPO (PCT)
Prior art keywords
amplifier
ase
edf
stage
pumping
Prior art date
Application number
PCT/US1999/021502
Other languages
English (en)
Inventor
Felton A. Flood
Michael J. Yadlowsky
Original Assignee
Corning Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Incorporated filed Critical Corning Incorporated
Priority to KR1020017004680A priority Critical patent/KR20010089300A/ko
Priority to EP99951487A priority patent/EP1121733A1/fr
Priority to AU63919/99A priority patent/AU6391999A/en
Priority to CA002346664A priority patent/CA2346664A1/fr
Priority to JP2000577742A priority patent/JP2002528901A/ja
Publication of WO2000024094A1 publication Critical patent/WO2000024094A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06795—Fibre lasers with superfluorescent emission, e.g. amplified spontaneous emission sources for fibre laser gyrometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • H01S3/06758—Tandem amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium

Definitions

  • the invention generally relates to optical amplifiers for high speed telecommunications systems, and more particularly, to an amplifier structure and associated method for efficient use of amplified spontaneous emission (hereinafter ASE) in a multistage, rare earth doped optical amplifier such as an EDFA, in which ASE is utilized for providing L-band optical signal amplification (hereinafter referred to as "ASE pumping").
  • ASE amplified spontaneous emission
  • EDFA rare earth doped optical amplifier
  • ASE pumping L-band optical signal amplification
  • Three techniques for increasing system capacity in multichannel lightwave systems include (1) increasing bit rate per channel, (2) increasing the number of channels by decreasing channel spacing, and (3) increasing number of channels by increasing the total gain/transmission bandwidth of the gain media.
  • Increasing the bit rate per channel is not always a viable solution as many installed systems cannot operate beyond the current OC-48 bit rate (2.5Gb/s).
  • fiber nonlinearities limit reducing channel spacing below the current values of 50GHz-100GHz.
  • increasing the EDFA gain bandwidth allows a direct path for increasingsystem capacity while maintaining channel spacing and bit rate per channel.
  • Ultrawide band erbium-doped silica fiber amplifier with 80 nm of bandwidth PROC. OAA, Post deadline paper PD 2-2, Victoria, BC Canada, 1997, discussed a split band architecture that amplifies both the conventional C-band (1530 nm - 1560 nm) and the L-band, providing a total gain bandwidth of 80 nm.
  • L-band amplification offers a demonstrable, but undeveloped, solution to the bandwidth constraints in WDM lightwave systems.
  • EDFAs operating in the L-band typically have features that distinguish them from amplifiers designed to work in the heavily used C-band from approximately 1530 nm to 1560 nm. Notable differences that have been observed include relatively flatter gain spectra at low inversions (i.e., 0.4 versus 0.6-0.7); and required longer lengths of erbium doped fiber. These are due at least in part to the relatively low emission cross section of erbium for wavelengths greater than approximately 1560 nm.
  • the power conversion efficiency for L-band EDFAs has typically been lower than that observed in conventional C-band EDFAs. We believe this is related to the approximately 10 times greater emission cross section of erbium in aluminum co-doped silica at the emission peak near 1530 nm than at 1600 nm; thus there can be considerable emission at the shorter wavelength before the signals in the longer band have been substantially amplified. This is compounded by the fact that the spontaneous emission near the emission peak will have a higher gain coefficient than the signals themselves (assuming that the inversion of the input stage is greater than approximately 60%, as required to get the noise performance typically desired of EDFAs for communications systems) and, as a result, is amplified at a higher rate.
  • the unusually long erbium doped fiber lengths required for low inversion amplification i.e., L >100 meters for current typical Er concentrations
  • L >100 meters for current typical Er concentrations provides large amounts of reverse traveling ASE.
  • an optical amplifier e.g., a multi-band amplifier
  • the invention is broadly directed to an optical amplifier having a structure that efficiently utilizes ASE (typically the wavelength region 1525 nm - 1565 nm) as a pump source, and as a consequence provides an increased signal bandwidth over conventional C-band amplifiers.
  • ASE typically the wavelength region 1525 nm - 1565 nm
  • An embodiment of the invention is directed to an optical amplifier including first and second amplifier stages that are serially interconnected; and means for pumping either the first or the second amplifying stage in either a forward or a reverse direction for generating an amount of ASE from the pumped amplifier stage which is used for pumping the other, unpumped amplifier stage.
  • an optical amplifier in another embodiment, includes first and second amplifier stages that are serially interconnected by a coupler for propagating a signal light from the first amplifier stage to the second amplifier stage; and a pump light source coupled to the first amplifier stage via the coupler for introducing pump light in a reverse traveling direction into the first amplifier stage, wherein the reverse pumping of the first amplifier stage provides an amount of ASE traveling in a forward direction towards and into the second amplifier stage for providing L-band signal amplification in the second amplifier stage.
  • an optical amplifier in another embodiment, includes first and second amplification stages of erbium doped fiber which are serially interconnected by a coupler for propagating signal light from the first stage to the second stage and for coupling forward traveling pump light into the second amplification stage wherein an amount of ASE is generated in a reverse traveling direction from the second amplification stage to the fist amplification stage for causing L-band signal amplification in the first amplifier stage.
  • the amplifier further includes means for receiving and redirecting an amount of unabsorbed ASE from the first amplifier stage back into the first amplifier stage.
  • first and second serially connected rare earth doped amplification stages of lengths Li and L 2 respectively; a source of pumping light coupled to an input of the first stage for providing a relatively high inversion and substantially complete absorption of the pump light in that stage and which provides an amount of ASE traveling back towards the input of the first amplification stage; and means for receiving and redirecting the ASE to the input of the second amplification stage as a pump source for the second stage.
  • the (L + L 2 ) amplification stage is preferably in a wavelength band centered at about 980 nm.
  • the ASE from the first amplification stage is redirected to the second stage by a feed forward optical path from stage 1 to stage 2.
  • the amplifying stages are preferably silica based erbium doped fiber waveguides; however, the principles of the invention are applicable to other rare earth doped optical amplifiers, e.g. thulium doped, working on the long wavelength side of three-level transitions.
  • a method of amplifying an optical communication signal in a wavelength range between about 1565 nm to 1615 nm includes the steps of pumping a silica based erbium doped gain media, preferably an erbium doped fiber stage of an EDFA, with ASE that is generated by pumping another erbium doped fiber stage with non ASE pump light.
  • the non ASE pumped erbium doped fiber stage is preferably pumped with light having a wavelength band centered at about 980 nm or 1480 nm.
  • the method involves pumping a first stage erbium doped fiber with light having a wavelength centered at about 980 nm and pumping a second stage erbium doped fiber with ASE generated by pumping with the shorter wavelength (980 nm) pump light.
  • the method includes redirecting the ASE from a first amplifier stage into a second amplifier stage for pumping the second amplifier stage with the ASE. This aspect of the invention preferably involves forward feeding the ASE around the first amplifier stage into the second amplifier stage.
  • FIG.l schematically illustrates a 2 stage ASE pump amplifier with a feed forward ASE path from stage 1 to stage 2 according to an embodiment of the invention
  • FIG. 2 schematically illustrates a conventional 2 stage amplifier with dual pump sources
  • FIG. 3 illustrates a comparison of noise figure and required pump power versus alpha for the ASE pumped amplifier and dual stage amplifier of FIGS. 1 and 2 respectively;
  • FIG. 4 schematically illustrates an ASE pumped L-band amplifier according to another embodiment of the invention.
  • FIG. 5 illustrates an ASE pumped L-band amplifier according to another embodiment of the invention
  • FIG. 6 illustrates an ASE pumped L-band amplifier according to another embodiment of the invention
  • FIG. 7 shows exemplary gain vs. wavelength profiles in the erbium L-band for three different inversion levels.
  • Preferred embodiments of the invention are directed to an erbium doped fiber amplifier that is pumped by ASE for amplifying optical signals in the L-band of the erbium gain spectrum (i.e., 1560-1620nm, see Fig. 7); and to a method for increasing the gain bandwidth of an erbium doped fiber amplifier by pumping the L-band of the erbium gain spectrum with ASE.
  • ASE for amplifying optical signals in the L-band of the erbium gain spectrum
  • a method for increasing the gain bandwidth of an erbium doped fiber amplifier by pumping the L-band of the erbium gain spectrum with ASE.
  • FIG. 1 An optical amplifier 10 according to a preferred embodiment of the invention is illustrated in FIG. 1.
  • the amplifier has a first erbium doped coil of fiber 12 having a length Li referred to herein as the first amplification stage, and a second erbium doped fiber coil 14 of length L 2 , referred to as the second amplification stage.
  • EDFs 12 and 14 are serially interconnected by connecting component 16 which optically couples the output of EDF 12 to the input of EDF 14 with respect to the propagation direction of the signal wavelength ⁇ S j g i n as shown.
  • a pump source 18 for pumping the first amplification stage 12 is coupled via connector 20 to the input of first amplification stage 12.
  • the pump 18 preferably emits a pump wavelength ⁇ pUmp in a wavelength band centered at about 980 nm, however 1480 nm pumping is suitable, as those skilled in the art will appreciate as the conventional pump wavelengths for EDFAs.
  • the length Li of first amplifier stage 12 i.e., the amplifier stage pumped by a conventional pump source
  • the length L 2 of second amplifier stage 14 is preferably related to the
  • Alpha ( ⁇ ) is preferably in the range between 0.5 to 1.0
  • the long length of the first amplification stage preferably > 100 meters, when pumped with light from pump source 18 such that essentially all of the pump light is absorbed in the first amplification stage, provides a low overall inversion (preferably about 0.4) and results in significant amounts of ASE propagating in a reverse direction (i.e., opposite to the direction of ⁇ pump ).
  • a component 22 is located near the input of first amplification stage 12 to reflect the reverse traveling ASE generated in EDFi over a feed forward path 24 around connecting component 16 and to the input of second amplification stage 14.
  • Connecting component 16 typically includes an isolator which may not efficiently propagate ⁇ pump equal to 980nm.
  • the ASE centered at about 1530nm, effectively pumps the L-band of the erbium gain spectrum of the second amplification stage 14 resulting in a wide signal band ⁇ of about 80nm (i.e., total C-band + L-band) when the amplifier is combined with a conventional C-band amplifier.
  • FIG. 2 shows plots of required pump power and noise figure as a
  • the ASE pump scheme requires more pump power (approximately 2 dB) while providing up to 2.0 dB lower noise figure compared to the o dual pump architecture.
  • ⁇ > 0.8 the required pump powers of both architectures are comparable, while the ASE pump scheme results in a 1.5 dB lower noise figure. This noise figure improvement is allegedly due to the inherent high front end inversion when all of the 980nm pump signal is injected into and substantially absorbed by the first amplification stage.
  • FIG. 4 Another embodiment of an ASE pumped optical amplifier 40 is illustrated in FIG. 4.
  • a first erbium doped fiber amplification stage 12 having a length Li is serially coupled to a second erbium doped fiber amplification stage 14 having a length L via coupler 42.
  • a pump source 18, preferably emitting pump light in a wavelength band centered at about 980 nm, is forward coupled into the input of second amplification stage 14 via coupler 42.
  • the length of the second amplification stage 14 is related to the length Li of first amplification stage 12 in the same manner as Li was related to L 2 for the embodiment of FIG.
  • L 2 is preferably 4 to 5 times the value of Li
  • Li and L 2 are related as ⁇ defined in this case as L 2 /( Li + L ), where 0.5 ⁇ ⁇ ⁇ 1.0.
  • the relatively longer length of second amplification stage 14 (preferably > 100 meters) and the low inversion level (preferably about 0.4) in second amplification stage 14 generates significant ASE in a reverse traveling direction with respect to the direction of ⁇ pUmp towards first amplification stage 12, and is used to pump the fist amplification stage for signal amplification in the L-band.
  • an ASE reflector 52 is located near the upstream end of first amplification stage 12.
  • the ASE reflector 52 of FIG. 5, and 22 of FIG. 1 can take the form of a grating, band splitter, thin film filter, WDM device, and other components suitable for reflecting or redirecting one or a band of wavelengths specifically in the ASE band (1525 nm - 1565 nm) and so as not to affect the signals which are in a different band of wavelengths.
  • an ASE pumped optical amplifier 60 shows a first erbium doped fiber amplification stage 12 optically coupled to a second erbium doped fiber amplification stage 14 via coupler 42.
  • a pump source 18 emitting pump light in a wavelength band preferably centered at about 980 y nm is reverse coupled into amplification stage 12 via coupler 42 for reverse pumping amplification stage 12.
  • amplification stage 12 is long relative to amplification stage 14 (i.e., 0.5 ⁇ ⁇ ⁇ 1.0) and a low inversion is maintained in stage 12, as described above, reverse traveling ASE (i.e., opposite to the direction of pump light propagation from pump source 18) is generated and is coupled into amplification stage
  • the method of generating L-band signal amplification in an erbium doped fiber amplifier includes pumping the erbium doped gain media with ASE in the Er 3+ C-band, centered at about 1530 nm.
  • an amplifier with paired gain stages is provided wherein one stage has a length of approximately 4-5 times that of the other stage, the longer length being preferably > 100 meters.
  • the longer length erbium doped gain media is pumped by a conventional pump source in a wavelength band preferably centered around 980 nm in either a co- or counter-propagating direction.
  • planar waveguide/amplifier implementations are also possible as long as the length of the erbium doped gain stage can be made sufficient to generate enough ASE to pump another erbium doped gain stage coupled to the first one.
  • the principles of the invention are applicable to other rare earth doped optical amplifiers using, e.g., thulium doped fiber or hybrids such as oxyhalide active fibers.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Lasers (AREA)

Abstract

Etage d'amplification dans un amplificateur (10) à étages multiples, dopé aux terres rares, qui possède un spectre de gain comportant une bande de longueur d'onde courte et une bande de longueur d'onde longue. Ledit amplificateur, qui est pourvu d'une lumière d'excitation, produit une quantité d'émission spontanée amplifiée (ASE) se déplaçant dans une direction inverse de celle de la lumière d'excitation initiale. La lumière d'émission spontanée amplifiée à déplacement inverse est dirigée vers un autre étage d'amplification (14) de l'amplificateur (10) et fournit de la lumière d'excitation pour le pompage de la bande de longueur d'onde longue. La structure d'amplificateur et le procédé associé d'amplification de signaux optiques selon la présente invention utilisent la lumière d'émission spontanée amplifiée inévitable pour l'amplification des signaux optiques. La présente invention permet l'amplification de signaux dans une bande de longueur d'onde qui n'était pas utilisée jusqu'alors de manière efficace dans des amplificateurs optiques classiques dopés aux terres rares.
PCT/US1999/021502 1998-10-16 1999-09-17 Gestion et utilisation de l'emission spontanee amplifiee dans un amplificateur optique WO2000024094A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020017004680A KR20010089300A (ko) 1998-10-16 1999-09-17 광학 증폭기에서 증폭된 자발방출의 이용 및 관리
EP99951487A EP1121733A1 (fr) 1998-10-16 1999-09-17 Gestion et utilisation de l'emission spontanee amplifiee dans un amplificateur optique
AU63919/99A AU6391999A (en) 1998-10-16 1999-09-17 Management and utilization of ase in optical amplifier
CA002346664A CA2346664A1 (fr) 1998-10-16 1999-09-17 Gestion et utilisation de l'emission spontanee amplifiee dans un amplificateur optique
JP2000577742A JP2002528901A (ja) 1998-10-16 1999-09-17 光増幅器のａｓｅの処理及び利用

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10453698P 1998-10-16 1998-10-16
US60/104,536 1998-10-16

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WO2000024094A1 true WO2000024094A1 (fr) 2000-04-27

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Country Status (9)

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US (1) US6233092B1 (fr)
EP (1) EP1121733A1 (fr)
JP (1) JP2002528901A (fr)
KR (1) KR20010089300A (fr)
CN (1) CN1323458A (fr)
AU (1) AU6391999A (fr)
CA (1) CA2346664A1 (fr)
TW (1) TW515133B (fr)
WO (1) WO2000024094A1 (fr)

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US6441953B1 (en) * 2000-04-24 2002-08-27 Corning Incorporated L band multistage amplifier with improved noise figure
US6459526B1 (en) * 1999-08-09 2002-10-01 Corning Incorporated L band amplifier with distributed filtering
WO2003088433A1 (fr) * 2002-04-08 2003-10-23 Marconi Uk Intellectual Property Ltd Amplificateurs optiques

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KR100399578B1 (ko) * 2000-11-29 2003-09-26 한국전자통신연구원 장파장 이득대역 어븀 첨가 광섬유 증폭기 및 역방향 진행자연방출광 차단 방법
US6396623B1 (en) * 2000-12-19 2002-05-28 Onetta, Inc. Wide-band optical amplifiers with interleaved gain stages
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CN1317600C (zh) * 2003-12-30 2007-05-23 武汉光迅科技股份有限公司 用自发辐射光源为辅助泵浦的增益位移型掺铥光纤放大器
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JP5392073B2 (ja) * 2009-12-28 2014-01-22 富士通株式会社 光増幅器
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JP7539064B2 (ja) 2020-12-16 2024-08-23 大学共同利用機関法人自然科学研究機構 光ファイバおよびａｓｅ光源
DE102021103243A1 (de) 2021-02-11 2022-08-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Faserlaseranordnung und Verfahren zur Erzeugung von Hochleistungs-Laserstrahlung
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US6441953B1 (en) * 2000-04-24 2002-08-27 Corning Incorporated L band multistage amplifier with improved noise figure
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US6233092B1 (en) 2001-05-15
CA2346664A1 (fr) 2000-04-27
TW515133B (en) 2002-12-21
JP2002528901A (ja) 2002-09-03
EP1121733A1 (fr) 2001-08-08
AU6391999A (en) 2000-05-08
CN1323458A (zh) 2001-11-21

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