WO1999047902A1 - Sonde manometrique a effet capacitif - Google Patents

Sonde manometrique a effet capacitif Download PDF

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Publication number
WO1999047902A1
WO1999047902A1 PCT/JP1998/001093 JP9801093W WO9947902A1 WO 1999047902 A1 WO1999047902 A1 WO 1999047902A1 JP 9801093 W JP9801093 W JP 9801093W WO 9947902 A1 WO9947902 A1 WO 9947902A1
Authority
WO
WIPO (PCT)
Prior art keywords
diaphragm
electrode
pressure sensor
temperature
thin film
Prior art date
Application number
PCT/JP1998/001093
Other languages
English (en)
Japanese (ja)
Inventor
Hiroshi Moriya
Akio Yasukawa
Satoshi Shimada
Atsushi Miyazaki
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to JP2000537048A priority Critical patent/JP3489563B2/ja
Priority to PCT/JP1998/001093 priority patent/WO1999047902A1/fr
Publication of WO1999047902A1 publication Critical patent/WO1999047902A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm

Definitions

  • the present invention relates to a capacitive pressure sensor, and more particularly to a capacitive pressure sensor that suppresses output fluctuation due to temperature change.
  • FIG. 4 is a cross-sectional view showing a capacitor structure of a general capacitive pressure sensor disclosed in Japanese Patent Application Laid-Open No. 3-180826.
  • a vacuum chamber 5 is formed between a Si diaphragm base 8 and a plate 6, and electrodes 3 and 4 are formed on the inner wall surface facing the Si diaphragm base 8 and the plate 6. It is equipped with a main body of a mounted configuration and a package 9 with a pressure inlet 10 fixed to the Si diaphragm base 8 side.
  • This capacitance type pressure sensor measures the absolute pressure by utilizing the fact that the Si diaphragm 1 is distorted by the pressure applied from the pressure inlet 10 and changes the electric capacitance between the opposing electrodes. .
  • Fig. 5 shows the case where the linear expansion coefficient of the material composing the electrode 3 is larger than the linear expansion coefficient of the silicon composing the diaphragm 1, and the temperature rises as a temperature change. The state of deformation of the diaphragm is shown.
  • An object of the present invention is to provide a capacitive pressure sensor that prevents a pressure output fluctuation due to a temperature change.
  • FIG. 1 is a cross-sectional view showing an example of a main structure of a capacitive semiconductor pressure sensor according to one embodiment of the present invention.
  • FIG. 2 is a schematic diagram for explaining the principle of preventing the temperature effect of the capacitive semiconductor pressure sensor shown in FIG.
  • FIG. 3 is a schematic diagram for explaining the principle of preventing the temperature effect of the capacitive semiconductor pressure sensor shown in FIG.
  • FIG. 4 is a cross-sectional view showing a main structure of a conventional capacitive semiconductor pressure sensor.
  • FIG. 5 is a schematic diagram for explaining that the pressure output of the conventional capacitive semiconductor pressure sensor shown in FIG. 4 is affected by temperature.
  • FIG. 6 is a schematic diagram for explaining that the pressure output of the conventional capacitive semiconductor pressure sensor shown in FIG. 4 is affected by temperature.
  • FIG. 7 is an FEM analysis model for explaining that the pressure output of a conventional capacitive semiconductor pressure sensor is affected by temperature.
  • FIG. 8 is a modified view of the FEM analysis model shown in FIG.
  • FIG. 9 is a modified view of the FEM analysis model shown in FIG.
  • FIG. 10 is an FEM analysis model for explaining the principle of preventing the temperature effect of the capacitive semiconductor pressure sensor according to one embodiment of the present invention.
  • FIG. 11 is a modified view of the FEM analysis model shown in FIG.
  • FIG. 12 is a modified view of the FEM analysis model shown in FIG.
  • FIG. 13 is a diagram showing an analysis result of the FEM analysis model shown in FIG.
  • FIG. 14 is a diagram showing an analysis result of the FEM analysis model shown in FIG.
  • FIG. 15 is an FEM analysis model for explaining the principle of preventing the temperature effect of the capacitive semiconductor pressure sensor according to one embodiment of the present invention.
  • FIG. 16 is a diagram showing an analysis result of the FEM analysis model shown in FIG.
  • FIG. 17 is a diagram showing an analysis result of the FEM analysis model shown in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 is a cross-sectional view of the capacitor part of the capacitive pressure sensor of the present invention.
  • the diaphragm 1 is made of silicon and has a linear expansion coefficient of ai, and the linear expansion coefficient formed on the upper surface of the diaphragm 1 is ⁇ . 2, a base 7 for holding the diaphragm 1 on a diaphragm base 8, a plate 6 forming the outer wall of the vacuum chamber 5 together with the diaphragm base 8, and the electrode 3 on the lower surface of the plate 6.
  • the coefficient of linear expansion ⁇ 3 of the thin film 2 on the base of the diaphragm is 1 1> ⁇ 3 when ⁇ 2 > ⁇ ⁇ and when ⁇ ⁇ ⁇ ⁇ 1> ⁇ 2 .
  • FIG. 2 is a diagram for explaining the principle of preventing a change in electric capacity caused by thermal stress when a temperature change occurs in the capacitive pressure sensor of the present invention.
  • it is the deformation of the diaphragm 1 and the electrode 3 and thin film 2 shown in FIG. 2, alpha 2, a temperature rise in the case of alpha 3> ai, by temperature decrease in the case of alpha 2, alpha 3 ⁇ ai Has occurred.
  • d 0 is the distance of the initial temperature, is the spacing in the vicinity of the center of the electrode surface, d 2 represents the distance in the vicinity of the outer periphery of the electrode.
  • FIG. 3 is a diagram illustrating the principle of preventing a change in electric capacity caused by thermal stress when a temperature change occurs in the capacitive pressure sensor of the present invention.
  • alpha 2 at a temperature falling in the case of ⁇ 3> ai, ⁇ 2, the temperature rise in the case of alpha 3 rather alpha Has occurred.
  • d 0 is the distance of the initial temperature, is the spacing in the vicinity of the center of the electrode surface, d 2 represents the distance in the vicinity of the outer periphery of the electrode.
  • a linear expansion coefficient a 3 forces thin film 2 of a thickness , And by adjusting the area, ( ⁇ ⁇ ( ⁇ Can, even if the diaphragm 1 is deformed by a temperature change, it is possible to reduce a change amount of the capacitance c. That is, it is possible to reduce the temperature effects of capacitive pressure sensor for detecting a change in pressure.
  • Fig. 7 shows the finite element method (Finite element method) of the main part of the conventional capacitive pressure sensor shown in Fig. 4. It is an Element Method (FEM) model and shows a cross-sectional view modeled axially symmetrically.
  • FEM Element Method
  • the above model consists of a diaphragm 1 with a radius of R 2 and a thickness of D 2 , an electrode 3 with a radius of 2 and a thickness, and a diaphragm base 8.
  • Table 1 shows an example of the rigidity when the diaphragm 1 is made of silicon and the electrode 3 is made of an electrical conductor such as polysilicon whose surface is coated with an insulating film such as silicon oxide or silicon nitride.
  • Fig. 8 shows a deformation diagram when the temperature of the FEM analysis model shown in Fig. 7 and Table 1 is increased from the initial temperature of 20 ° C to 120 ° (100 ° C).
  • Fig. 9 shows a deformation diagram when the temperature of the FEM analysis model shown in Fig. 7 and Table 1 is lowered from the initial temperature of 20 to 180 ° C (100 ° C). The deformation display is enlarged in Figs. 8 and 9 to make the deformation state easier to understand.
  • the diaphragm deforms convexly downward due to thermal expansion due to the temperature rise (100 ° C) from the initial temperature of 20 ° C to 120 ° C. Due to the above deformation, the distance d (x, y) between the electrode 3 and the upper electrode surface is the distance d at the initial temperature over the entire area of the electrode. Be larger.
  • the electric capacity is expressed by the following equation (3).
  • the diaphragm 1 is deformed to be convex upward due to heat shrinkage caused by a temperature decrease (100 ° C.) from an initial temperature of 20 ° C. to ⁇ 80 ° C. Due to the above deformation, the distance d (X, y) between the electrode 3 and the upper electrode surface is the distance d at the initial temperature over the entire area of the electrode. Smaller. As a result, the electric capacity C 2 is given by the following equation (4)
  • the diaphragm is greatly deformed by the temperature change, and the temperature change affects the output.
  • FIG. 10 shows an FEM model of a main part of the capacitive pressure sensor of the present invention, and shows a cross-sectional view modeled in an axially symmetric manner.
  • the above model, radius and diaphragm 1 having a thickness D 2 in R 2, an electrode 3 of the radius of the thickness, a thin film of thickness D 3 at the width L formed on the base of Daiafu ram, and the diaphragm earth The distance between the electrode 3 and the surface of the upper electrode is d. It is.
  • Table 2 shows an example of the present invention in which the diaphragm 1 and the diaphragm support 7 are made of silicon, and the electrode 3 is made of an electric conductor such as polysilicon whose surface is coated with an insulating film such as silicon oxide or silicon nitride.
  • the rigidity of the thin film 2 is the same as that of the electrode 3 in this case.
  • Fig. 11 shows the deformation diagram when the temperature of the FEM analysis model shown in Fig. 10 and Table 2 was raised from the initial temperature of 20 ° C to 120 ° C (100 ° C).
  • Fig. 12 is a deformation diagram when the temperature of the FEM analysis model shown in Fig. 10 and Table 2 is lowered (100.C) from the initial temperature of 20 to 180 ° C. ing.
  • D 3 l [m]
  • Fig. 11 which is the result of FEM analysis of the capacitive pressure sensor according to one embodiment of the present invention
  • the thermal expansion due to the temperature rise (100 ° C) from the initial temperature of 20 ° C to 120 ° C is shown.
  • the electrode deforms convex downward.
  • the coefficient of linear expansion is smaller than that of the diaphragm, and since the thin film 2 is on the base of the diaphragm, the base of the diaphragm is deformed downward.
  • electrode 3 moves upward as a whole, and d (x, y)> d at the distance d (X, y) between electrode 3 and the upper electrode surface. Area And (x, y) ⁇ d.
  • Fig. 12 which is the result of FEM analysis of the capacitive pressure sensor according to one embodiment of the present invention.
  • the contraction deforms the electrode upwardly.
  • the coefficient of linear expansion is smaller than that of the diaphragm, and the thin film 2 is on the base of the diaphragm, the base of the diaphragm is deformed upward.
  • the electrode 3 is wholly moved down, the distance between the electrode 3 and the upper electrode surface d (x, y), d (x, y)> d Q and ing area and d (x, y ) ⁇ d.
  • the amount of change in the capacitance C can be reduced. That is, the temperature effect of the capacitive pressure sensor can be reduced.
  • FIG. 13 shows that the influence of temperature on the electric capacity when no pressure is applied (hereinafter, the zero point effect) is reduced.
  • Fig. 13 shows the dependence of the electric capacity of the pressure sensor of Fig. 10 shown in Example 2 on the thickness of the thin film 3, where no pressure was applied.
  • the point where the film thickness is 0 [ ⁇ m] in Fig. 13 is the capacitance value in the FEM analysis model shown in Fig. 7.
  • Fig. 14 shows the temperature change of the capacitance at various film thicknesses.
  • Fig. 13 by increasing the thickness of the thin film 3 from 0 [m], the amount of change in the electric capacity due to the temperature change becomes small, and the effect of the zero point becomes about 1.2 [ ⁇ (optimum film thickness).
  • FIGS. Fig. 15 is a cross-sectional view of the FEM model of the main part of the capacitive pressure sensor of the present invention, in which the pressure P is applied to the FEM model of Fig. 10 shown in the second embodiment. It is the same as the model in Figure 10.
  • the first 6 figure is a calculation result of the FEM analysis model shown in the first 5 figures and Table 2, the thickness D 3 of the thin film 2 is 0 [m] in the case of i.e. a thin film 2 is not formed, the temperature - It shows the pressure characteristics of electric capacitance at 80 ° C, 20 ° C, and 120 ° C.
  • the first 7 drawing is a calculation result of the FEM analysis model shown in the first 5 figures and Table 2, the thickness D 3 of the thin film 1 [/ zm], the temperature _ 8 0 ° C, 2
  • the pressure characteristics of the electric capacitance at 0 ° C and 120 ° C are shown. From Fig. 16, it can be seen that the electric capacity greatly differs depending on the temperature, and that the pressure output greatly affects the temperature change.
  • Fig. 17 unlike the Fig. 16, the line showing the pressure characteristic of the capacitance is almost on the same line. This indicates that the effect of the pressure output can be reduced by forming the thin film 2 at the base of the diaphragm.
  • a thin film made of a material different from the linear expansion coefficient of the supporting portion is formed on the supporting portion that supports the diaphragm on the body of the capacitive pressure sensor. Even if a temperature change occurs, the change in the distance between the opposing electrodes is suppressed to a small value, thereby preventing the capacitance from being changed due to the temperature change, and reducing the temperature effect of the pressure output.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

La présente invention concerne une sonde manométrique à effet capacitif dont la sortie ne peut fluctuer, même en cas de fluctuation de la température. Des contre-électrodes définissent les côtés d'une cavité à l'intérieur de la sonde manométrique. Le corps principal de la sonde manométrique comporte un support de membrane. Un film mince d'un coefficient d'expansion linéaire différent de celui du matériau du support de membrane est déposé sur le support de membrane. Cette sonde manométrique détecte les fluctuations de capacitance entre les électrodes de façon à produire un signal de pression.
PCT/JP1998/001093 1998-03-16 1998-03-16 Sonde manometrique a effet capacitif WO1999047902A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000537048A JP3489563B2 (ja) 1998-03-16 1998-03-16 容量型圧力センサ
PCT/JP1998/001093 WO1999047902A1 (fr) 1998-03-16 1998-03-16 Sonde manometrique a effet capacitif

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/001093 WO1999047902A1 (fr) 1998-03-16 1998-03-16 Sonde manometrique a effet capacitif

Publications (1)

Publication Number Publication Date
WO1999047902A1 true WO1999047902A1 (fr) 1999-09-23

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JP (1) JP3489563B2 (fr)
WO (1) WO1999047902A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005337924A (ja) * 2004-05-27 2005-12-08 Tokyo Electron Ltd 圧力計の製造方法、ガス処理装置の製造方法、圧力計、及び、ガス処理装置
WO2007107736A3 (fr) * 2006-03-20 2009-09-11 Wolfson Microelectronics Plc processus et disupositif MEMS
JP2020153779A (ja) * 2019-03-19 2020-09-24 株式会社東芝 圧力センサ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03239938A (ja) * 1990-02-16 1991-10-25 Toyoda Mach Works Ltd 容量型圧力センサ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03239938A (ja) * 1990-02-16 1991-10-25 Toyoda Mach Works Ltd 容量型圧力センサ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005337924A (ja) * 2004-05-27 2005-12-08 Tokyo Electron Ltd 圧力計の製造方法、ガス処理装置の製造方法、圧力計、及び、ガス処理装置
JP4678752B2 (ja) * 2004-05-27 2011-04-27 東京エレクトロン株式会社 圧力計の製造方法及びガス処理装置の製造方法
WO2007107736A3 (fr) * 2006-03-20 2009-09-11 Wolfson Microelectronics Plc processus et disupositif MEMS
US7781249B2 (en) 2006-03-20 2010-08-24 Wolfson Microelectronics Plc MEMS process and device
US7856804B2 (en) 2006-03-20 2010-12-28 Wolfson Microelectronics Plc MEMS process and device
CN103096235B (zh) * 2006-03-20 2015-10-28 思睿逻辑国际半导体有限公司 制备微机电系统麦克风的方法
JP2020153779A (ja) * 2019-03-19 2020-09-24 株式会社東芝 圧力センサ

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