WO1999039382A1 - Process for ashing organic materials from substrates - Google Patents
Process for ashing organic materials from substrates Download PDFInfo
- Publication number
- WO1999039382A1 WO1999039382A1 PCT/US1999/001560 US9901560W WO9939382A1 WO 1999039382 A1 WO1999039382 A1 WO 1999039382A1 US 9901560 W US9901560 W US 9901560W WO 9939382 A1 WO9939382 A1 WO 9939382A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- ashing
- sulfur trioxide
- photoresists
- group
- Prior art date
Links
- 238000004380 ashing Methods 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 63
- 230000008569 process Effects 0.000 title claims description 52
- 239000011368 organic material Substances 0.000 title claims description 10
- 239000007789 gas Substances 0.000 claims abstract description 67
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 claims abstract description 64
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims abstract description 28
- 230000000153 supplemental effect Effects 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims abstract description 7
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims abstract description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000460 chlorine Substances 0.000 claims abstract description 4
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 239000000376 reactant Substances 0.000 claims description 18
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 4
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 4
- 239000001272 nitrous oxide Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 3
- -1 aluminum-silicon-copper Chemical compound 0.000 claims description 3
- LZDSILRDTDCIQT-UHFFFAOYSA-N dinitrogen trioxide Chemical compound [O-][N+](=O)N=O LZDSILRDTDCIQT-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 125000002524 organometallic group Chemical group 0.000 claims description 2
- 239000003973 paint Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 26
- 239000010410 layer Substances 0.000 description 15
- 230000004913 activation Effects 0.000 description 11
- 238000001994 activation Methods 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000002939 deleterious effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000008398 formation water Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
Definitions
- the present invention relates generally to the removal of organic materials on various substrates, and, more particularly, to an ashing method for removing organic films and materials temporarily formed on various substrate layers during fabrication of semiconductor, flat panel display, read/write heads, and other related devices.
- VLSI Very Large Scale Integration
- ULSI Ultra Large Scale Integration
- the ashing methods are continuously faced with two problems: (a) achieving higher rates of residual-free resist removal and (b) lowering the amount of damage caused in the substrate layers underlying the resist film.
- These generally conflicting objectives are addressed by changing either the physical conditions of the plasma medium or the chemical conditions of the ashing process. For example, one can achieve higher rates of processing by either generating a dense plasma environment or by using or generating, in the plasma environment, chemical species that react more efficiently with the resist.
- Substrate damage can likewise be attributed to both physical and chemical conditions of the plasma.
- charging and ion bombardment effects are directly related to the physical properties of the plasma.
- Energetic ions can drive small quantities of heavy metal (i.e.. Fe, Cu and Pb) and alkaline metal (i.e.. Na and K) atoms, which are generally present as impu ⁇ ties in the resist films, into the substrate layer underneath the resist.
- the heavy metal contamination and in particular the subsequent permeation and migration of heavy metals into other substrates (e.g. silicon) layers can affect the minority carrier lifetime to the detriment of the device properties.
- Such bombardment effects become more severe as the resist films become thinner towards the end of the ashing process, particularly as the thickness of sensitive substrates are designed to be thinner.
- Substrate damage also results from the chemical properties of plasma, such as etching or other poisonous effects on the layer underneath the resist.
- etching of silicon oxide (SiO 2 ) occurs because of fluorine (F), when halogenated gas mixtures such as oxygen (O 2 ) and tetrafluoromethane (CF 4 ) are used to increase the rate of plasma ashing.
- halogenated gas mixtures such as oxygen (O 2 ) and tetrafluoromethane (CF 4 ) are used to increase the rate of plasma ashing.
- energetic oxygen ions can contribute to the formation water inside the surface layers of spin-on-glass (SOG) films, resulting in an increase in the dielectric constant or in the related via-poisoning phenomenon.
- the rate and completeness of ashing as well as any unwanted etching or damage to the substrate layer, in the conventional ashing tools, are strongly influenced by the chemical reactions between the resist and the substrate layer and the reactive ionic, neutral and radical species generated in the plasma.
- the nature of the plasma gas mixture is the p ⁇ - mary determinant of the ashing rate which is also sensitive to the "ashing temperature".
- the nature of the gas mixture also influences the activation energy of ashing which is a measure of the sensitivity of the ashing rate to the ashing temperature.
- the activation energy is obtained from the gradient of the A ⁇ t-enius plot which is a line plot of the ashing rate as a function of the inverse .ashing temperatures. Therefore, a small activation energy (small slope of the Arrhenius plot) indicates that ashing rate is less sensitive to ashing temperature, and that the ashing process will be more stable and uniform. Lower activation ener- gies also imply that the ashing temperature can be lowered without significant loss of ashing rate. This is particularly useful where VLSI or ULSI fabrication requires lower processing temperatures and yet where acceptable practical levels of ashing rates (i.e., > 0.5 ⁇ m/min) must be maintained.
- the present inventors have successfully used anhydrous sulfur trioxide (SO 3 ) in non- plasma resist removal applications at temperatures substantially lower than 200°C.
- SO 3 anhydrous sulfur trioxide
- Experiments have shown that exposure of resist-covered substrate surfaces to SO 3 leaves polysilicon and metal substrates surfaces intact without any deleterious effect. Exposed silicon and metal surfaces are also protected because of passivation action of sulfur trioxide. Therefore, sulfur trioxide 4 appears as a suitable candidate, either alone or in a reactant gas mixture, for plasma ashing applications. Particularly in the presence of oxygen plasma, it is expected that SO 3 will enhance the oxygen radical formation, thus significantly improving the rate of the ashing reaction.
- Group 1 gas which comprises only sulfur trioxide g.as
- Group 2 gases which comprise a mixture of sulfur trioxide and a supplemental gas such as water vapor, ozone, hydrogen, nitrogen, nitrogen oxides, or a halogenide such as tetrafluoro-methane (CF 4 ), chlorine (Cl 2 ), nitrogen trifluoride (NF 3 ), hexafluoroethane (C 2 F 6 ), or methyltrifluoride (CHF 3 );
- Group 3 gases which comprise a mixture of sulfur trioxide and at least two of the foregoing supplemental gases.
- supplemental gases when certain of these supplemental gases are added to the main reactive ashing gas in the appropriate quantities and at the appropriate time in the process, they promote favorable ashing process characteristics and organic film removal performance.
- Such favorable characteristics and performance includes (a) higher ashing rates, (b) lower acti- vation energies, and (c) absence of ground layer etching during the organic removal process.
- Stripping and plasma ashing of organic photoresists using one of the three groups of gases described above, are carried out with a conventional down-flow, barrel, downstream, direct, or other type of plasma ashing tool which is known in the prior art.
- the present invention pertains to the nature of the gases used in the ashing process and has application in all conventional ashing tools.
- the down-flow, barrel, direct, and downstream and other types of plasma ashing tools are well-known in this .art and form no part of this invention.
- the basic concept behind this invention is that sulfur trioxide gas.
- the sulfur t ⁇ oxide is provided in a source container from which sulfur trioxide gas is supplied to the processing chamber in the quantities and at the appropriate time in the ashing process.
- sulfur trioxide may be a mix of solid, liquid or gas, with the solid material in alpha form, beta form, gamma form or a mixture thereof.
- the following organic materials in the form of coatings, films, layers, and residues, may be removed by the process of the present invention: polymerized and non- polymerized photoresists, photoresist residues, photosensitive and non-photosensitive organic compounds, paints, resins, multilayer organic polymers, organo-metallic complexes, sidewall polymers, and organic spin-on-glass.
- the photoresists may comprise positive optical photoresists, negative optical photoresists, electron beam photoresists, X-ray photoresists, and ion-beam photoresists.
- Such coatings, films, layers, and residues may have been formed on a variety of substrates, including, but not limited to, (a) semiconductor wafers and devices comprised of silicon, polysilicon, germanium, ITI-V materials, and II- VI materials, (b) oxides, (c) nitrides, (d) oxyni- trides, (e) inorganic dielectrics, (f) metals and metal alloys, (g) ceramic devices, (h) photomasks, (i) liquid crystal .and flat panel displays, (j) printed circuit boards, (k) magnetic read/write heads, and (1) thin film heads.
- substrates including, but not limited to, (a) semiconductor wafers and devices comprised of silicon, polysilicon, germanium, ITI-V materials, and II- VI materials, (b) oxides, (c) nitrides, (d) oxyni- trides, (e) inorganic dielectrics, (f) metals and metal alloys, (g) ceramic devices, (
- the ashing process of the invention may be carried out at a temperature within the range of room temperature (about 20°C) up to 350°C. However, the ashing process is preferably carried out at as low a temperature as possible, consistent with maintaining as high an etching rate as possible. More preferably, then, the ashing process is carried out at a temperature less than about 200°C.
- One embodiment is a plasma ashing process conducted in any of the conventional down- flow. b-arrel. direct, and downstream and other types of ashing tools known in the prior art.
- the Group 1 gases are employed for the purpose of creating a plasma.
- the reactant gases comprise only sulfur trioxide.
- Sulfur trioxide is supplied to the plasma generating chamber, which is initially evacuated and exhausted to an appropriate vacuum.
- the 6 flow rate of the SO 3 gas is controlled by a controller during the process.
- Microwave power is supplied into the plasma generating chamber where a plasma is created with the reactant gases.
- Active species which are generated as a plasma flow down to a process chamber and come into contact with the organic film on the surface of the substrate by one of the methods disclosed in the prior art.
- the organic film is either removed or chemically changed so as to render the film removable with subsequent rinsing or cleaning steps in the process.
- the process limitations such as flow rate, microwave power, and the like are the same as those conventionally employed in the prior art. such as disclosed in U.S. Patents 4.669,689 and 4,961,820.
- the Group 2 gases are employed for the purpose of creating a plasma.
- the reactant gases comprise sulfur trioxide and one supplemental gas.
- Sulfur trioxide and the supplemental gas are supplied to the plasma generating chamber, which is initially evacuated and exhausted to an appropriate vacuum.
- the sulfur trioxide concentration in the Group 2 reactant gas is within the range of about 1 to 95 vol%.
- the supplemental gas comprises the balance (99 to 5 vol%).
- the flow rate of each gas is controlled by a controller during the process.
- Microwave power is supplied into the plasma generating chamber where a plasma is created with the reactant gases.
- the supplemental gas may comprise any of the gases selected from the group consisting of water vapor, ozone, hydrogen, nitrogen, nitrogen oxides, or a halogenide such as tetrafluo- romethane (CF ), chlorine (Cl 2 ), nitrogen trifluoride (NF 3 ), hexafluoroethane (C 2 F 6 ), or methyl- trifluoride (CHF 3 ).
- CF tetrafluo- romethane
- chlorine Cl 2
- nitrogen trifluoride NF 3
- hexafluoroethane C 2 F 6
- CHF 3 methyl- trifluoride
- nitrogen oxides include nitrous oxide (N 2 O), nitric oxide (NO), nitrogen trioxide (NO ), and nitrogen dioxide (NO 2 ).
- Yet another embodiment of the present invention is a plasma ashing process conducted in any of the conventional down-flow, barrel, direct, and downstream and other types of ashing tools.
- the Group 3 gases are employed for the purpose of creating a plasma.
- the reactant gases comprise sulfur trioxide and at least two supplemental gases. Sulfur trioxide and the supplemental gases are supplied to the plasma generating chamber, which is initially evacuated and exhausted to an appropriate vacuum.
- the sulfur trioxide concentration in the Group 3 reactant gas is within the range of about 1 to 95 vol%.
- the supplemental gas comprises the balance (99 to 5 vol%). 8
- the flow rate of the gas is controlled by a controller during the process.
- Microwave power is supplied into the plasma generating chamber where a plasma is created with the reactant gases.
- Active species which are generated as a plasma, flow down to a process chamber and come into contact with the organic film on the surface of the substrate by one of the methods dis- closed in the prior art.
- the organic film is either removed, or chemically changed so as to render the film removable with subsequent rinsing or cleaning steps in the process.
- the process limitations, such as flow rate, microwave power, and the like are the same as those conventionally employed in the prior art.
- the supplemental gases comprises at least two of the gases from the list of supplemental gases given above.
- removal of organic films, including resist layers is substantially complete, with little or no damage to the underlying ground layer.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000529750A JP3358808B2 (en) | 1998-01-28 | 1999-01-26 | How to insulate organic substances from substrates |
IL13751399A IL137513A (en) | 1998-01-28 | 1999-01-26 | Process for ashing an organic film from a substrate |
CA002319018A CA2319018C (en) | 1998-01-28 | 1999-01-26 | Process for ashing organic materials from substrates |
EP99904261A EP1074043A4 (en) | 1998-01-28 | 1999-01-26 | Process for ashing organic materials from substrates |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1469598A | 1998-01-28 | 1998-01-28 | |
US09/014,695 | 1998-01-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999039382A1 true WO1999039382A1 (en) | 1999-08-05 |
Family
ID=21767120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/001560 WO1999039382A1 (en) | 1998-01-28 | 1999-01-26 | Process for ashing organic materials from substrates |
Country Status (9)
Country | Link |
---|---|
EP (1) | EP1074043A4 (en) |
JP (1) | JP3358808B2 (en) |
KR (1) | KR100377711B1 (en) |
CN (1) | CN1154159C (en) |
CA (1) | CA2319018C (en) |
IL (1) | IL137513A (en) |
MY (1) | MY134851A (en) |
TW (1) | TWI239994B (en) |
WO (1) | WO1999039382A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001024245A1 (en) * | 1999-09-28 | 2001-04-05 | Anon, Inc. | Process for ashing organic materials from substrates |
WO2005066717A1 (en) * | 2003-12-23 | 2005-07-21 | Tokyo Electron Limited | Method and apparatus for removing photoresist from a substrate |
WO2007056369A2 (en) * | 2005-11-08 | 2007-05-18 | Tokyo Electron Limited | Batch photoresist dry strip and ash system and process |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100559947B1 (en) * | 2004-08-18 | 2006-03-13 | 동부아남반도체 주식회사 | Method for post treatment of metal wiring of semiconductor device |
US7381651B2 (en) * | 2006-03-22 | 2008-06-03 | Axcelis Technologies, Inc. | Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process |
US8043434B2 (en) * | 2008-10-23 | 2011-10-25 | Lam Research Corporation | Method and apparatus for removing photoresist |
CN104599962A (en) * | 2014-12-29 | 2015-05-06 | 上海华虹宏力半导体制造有限公司 | Thick aluminum etching polymer removing method |
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- 1999-01-26 EP EP99904261A patent/EP1074043A4/en not_active Ceased
- 1999-01-26 IL IL13751399A patent/IL137513A/en not_active IP Right Cessation
- 1999-01-26 CN CNB99802399XA patent/CN1154159C/en not_active Expired - Fee Related
- 1999-01-26 MY MYPI99000277A patent/MY134851A/en unknown
- 1999-01-26 KR KR10-2000-7008217A patent/KR100377711B1/en not_active IP Right Cessation
- 1999-01-26 WO PCT/US1999/001560 patent/WO1999039382A1/en not_active Application Discontinuation
- 1999-01-26 CA CA002319018A patent/CA2319018C/en not_active Expired - Fee Related
- 1999-01-26 JP JP2000529750A patent/JP3358808B2/en not_active Expired - Fee Related
- 1999-03-23 TW TW088101212A patent/TWI239994B/en not_active IP Right Cessation
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JPH05304089A (en) * | 1992-04-28 | 1993-11-16 | Dainippon Screen Mfg Co Ltd | Method and device of removing resist from surface of substrate |
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US5824604A (en) * | 1996-01-23 | 1998-10-20 | Mattson Technology, Inc. | Hydrocarbon-enhanced dry stripping of photoresist |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6599438B2 (en) | 1998-01-28 | 2003-07-29 | Anon, Inc. | Process for ashing organic materials from substrates |
WO2001024245A1 (en) * | 1999-09-28 | 2001-04-05 | Anon, Inc. | Process for ashing organic materials from substrates |
WO2005066717A1 (en) * | 2003-12-23 | 2005-07-21 | Tokyo Electron Limited | Method and apparatus for removing photoresist from a substrate |
WO2007056369A2 (en) * | 2005-11-08 | 2007-05-18 | Tokyo Electron Limited | Batch photoresist dry strip and ash system and process |
WO2007056369A3 (en) * | 2005-11-08 | 2007-07-05 | Tokyo Electron Ltd | Batch photoresist dry strip and ash system and process |
US7387968B2 (en) | 2005-11-08 | 2008-06-17 | Tokyo Electron Limited | Batch photoresist dry strip and ash system and process |
Also Published As
Publication number | Publication date |
---|---|
TWI239994B (en) | 2005-09-21 |
CN1154159C (en) | 2004-06-16 |
JP3358808B2 (en) | 2002-12-24 |
KR20010040431A (en) | 2001-05-15 |
CA2319018A1 (en) | 1999-08-05 |
IL137513A (en) | 2004-05-12 |
IL137513A0 (en) | 2001-07-24 |
JP2002502125A (en) | 2002-01-22 |
CA2319018C (en) | 2004-08-24 |
KR100377711B1 (en) | 2003-03-26 |
CN1289452A (en) | 2001-03-28 |
MY134851A (en) | 2007-12-31 |
EP1074043A1 (en) | 2001-02-07 |
EP1074043A4 (en) | 2002-11-06 |
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