WO1999036966A1 - Systeme redresseur - Google Patents

Systeme redresseur Download PDF

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Publication number
WO1999036966A1
WO1999036966A1 PCT/JP1998/000116 JP9800116W WO9936966A1 WO 1999036966 A1 WO1999036966 A1 WO 1999036966A1 JP 9800116 W JP9800116 W JP 9800116W WO 9936966 A1 WO9936966 A1 WO 9936966A1
Authority
WO
WIPO (PCT)
Prior art keywords
rectifier
diode
generator
voltage
semiconductor
Prior art date
Application number
PCT/JP1998/000116
Other languages
English (en)
Japanese (ja)
Inventor
Shiro Iwatani
Keiichi Komurasaki
Hirofumi Watanabe
Original Assignee
Mitsubishi Denki Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Denki Kabushiki Kaisha filed Critical Mitsubishi Denki Kabushiki Kaisha
Priority to PCT/JP1998/000116 priority Critical patent/WO1999036966A1/fr
Publication of WO1999036966A1 publication Critical patent/WO1999036966A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P9/00—Arrangements for controlling electric generators for the purpose of obtaining a desired output
    • H02P9/14—Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field
    • H02P9/26—Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field using discharge tubes or semiconductor devices
    • H02P9/30—Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field using discharge tubes or semiconductor devices using semiconductor devices

Definitions

  • the present invention uses a Schottky barrier diode for a semiconductor rectifier used in a rectifier of an on-board AC generator, thereby reducing heat generation and suppressing a commutation surge voltage to reduce an electron. It reduces the effect of noise on equipment.
  • FIG. 7 is a configuration diagram of a conventional vehicle alternator.
  • the conventional one is composed of a field coil 102 that is driven by a vehicle engine (engine) (not shown) to generate a rotating magnetic field, and an armature winding 101 that generates and outputs an AC voltage by the generated rotating magnetic field.
  • Composed AC generator 1 Rectifier 2 that rectifies the voltage generated by AC generator 1 and supplies it to battery 4 or electric load 6 from main terminal 201, and electricity that supplies the terminal voltage or voltage of battery 4
  • a voltage regulator 3 that controls the exciting current of the field coil 102 in accordance with the load 6 and adjusts the generated voltage of the AC generator 1, and a load switch 7 that connects the generated voltage of the AC generator 1 to an electric load.
  • a rectifier 2 is used to generate an AC current from a battery 4 through a voltage regulator 3 to a field coil 102 through a voltage regulator 3 when the engine is started. Excitation to field coil 102 And an auxiliary output terminal 2 0 3 for outputting.
  • FIG. 8 is a configuration diagram of a conventional vehicle alternator having no auxiliary output terminal in the rectifier 2.
  • Other configurations are the same as the configuration of the vehicle alternator shown in FIG. 9 and 10 show a conventional vehicle alternator equipped with a rectifier of a neutral diode type, and other configurations are the same as those shown in FIGS.
  • Fig. 11 shows a semiconductor rectifier element used as a rectifier 2 1 shows the structure of a pn junction diode.
  • the pn junction diode joins a P-type semiconductor and an N-type semiconductor made of silicon, and an electrode E1 is provided on the P-type semiconductor to be an anode terminal A, and an electrode E2 is provided on an N-type semiconductor to be a cathode terminal K.
  • Fig. 12 shows the forward voltage drop characteristics of the pn junction diode with respect to the forward current. If the maximum output current of the alternator 1 is 9 OA, that is, the forward voltage drop of the pn junction diode is 1, 0 V.
  • the present invention has been made to solve the above-mentioned problems, and can reduce the power loss of an AC generator for a vehicle, reduce the amount of heat generation, and suppress the commutation surge voltage of a diode. And to obtain a rectifier that can reduce the effect of noise on electronic equipment including car radios. Disclosure of the invention
  • the present invention provides a rectifier for full-wave rectification of the output of an AC generator, wherein a schottky diode made of silicon byte is used as a rectifying semiconductor element for full-wave rectification, thereby generating heat due to power loss. This reduces the commutation surge voltage of the diode and reduces the effect of noise on the mounted electronic equipment.
  • FIG. 1 is a configuration diagram of a vehicle AC generator using a rectifier with an auxiliary output terminal according to an embodiment of the present invention.
  • FIG. 2 is a configuration diagram of a vehicular AC generator using a rectifier according to another embodiment having no auxiliary output terminal.
  • FIG. 3 is a configuration diagram of a vehicle alternator using a rectifier according to another embodiment of a neutral point type with an auxiliary output terminal.
  • FIG. 4 is a configuration diagram of a vehicle alternator using a neutral point diode rectifier according to another embodiment having no auxiliary output terminal.
  • FIG. 5 is a cross-sectional view showing a structure of a Schottky barrier diode used in the rectifier according to the present embodiment.
  • Fig. 6 is a diagram showing the voltage drop characteristics with respect to the forward current in a Schottky barrier diode.
  • Fig. 7 is a configuration diagram of a vehicle AC generator using a conventional rectifier with an auxiliary output terminal.
  • FIG. 8 is a configuration diagram of a vehicular AC generator using a conventional rectifier and having no auxiliary output terminal.
  • Fig. 9 is a block diagram of a vehicle alternator using a conventional rectifier of neutral point type with an auxiliary output terminal.
  • FIG. 10 is a configuration diagram of a vehicle alternator using a conventional rectifier of a neutral point diode type having no auxiliary output terminal.
  • FIG. 11 is a sectional view showing the structure of an 11 pn junction diode.
  • FIG. 12 is a diagram showing a voltage drop characteristic with respect to a forward current in a 12n junction diode.
  • Figure 1 is a block diagram of an automotive alternator that uses a Schottky barrier diode as a semiconductor rectifier in a rectifier with an auxiliary output terminal.
  • the difference between this embodiment and the conventional vehicle AC generator (Fig. 7) is that the semiconductor rectifier of rectifier 2 has a pn junction diode. A short-distance barrier was used instead of the gate, and the same applies to other configurations.
  • Figures 2, 3, and 4 correspond to the conventional automotive alternator shown in Figures 8, 9, and 10, respectively, and the semiconductor rectifier also uses a Schottky diode instead of a pn junction diode. Is used.
  • a Schottky barrier / diode is a metal-semiconductor junction with a Schottky barrier, in which metal and semiconductor are provided with electrode terminals. It shows current-voltage characteristics very similar to the diode of a pn junction, but generally the forward rise voltage is low due to the low internal potential.
  • the Schottky barrier diode is a majority carrier device in which the majority carrier controls the operation.Therefore, there is no accumulation effect of the minority carrier in the pn junction. . In contrast, the pn junction diode has a reverse recovery time on the order of ⁇ s.
  • FIG. 5 is a cross-sectional view showing the structure of the shot barrier barrier diode.
  • the Schottky barrier diode is formed by joining an n-type semiconductor consisting of barrier metal BM and SiC. Then, an anode terminal A is provided on the barrier metal B M via the electrode E 1, and a cathode terminal K is provided on the n-type semiconductor through the electrode E 2.
  • Figure 6 shows the voltage drop characteristics with respect to the forward current in this Schottky barrier diode. According to this characteristic, when the maximum output current of the alternator 1 is assumed to be 9 O A, the forward voltage drop of the Schottky barrier diode is 0.5 V.
  • the power loss can be reduced to 90W, which is half that in the case where a pn junction diode is used for the semiconductor rectifier, and the output of the AC generator 1 can be increased by the reduced power loss.
  • the capacity of the heat sink for radiating the heat generated by the power loss is reduced, and the mounting area of the rectifier can be reduced.
  • the reverse recovery time is on the order of ⁇ s compared to the pn junction diode, the commutation surge voltage generated during commutation commutation can be suppressed, and the effect of noise on electronic equipment including car radios can be reduced. it can.
  • the rectifier according to the present invention uses a Schottky barrier diode for the semiconductor rectifier, thereby reducing power loss as compared with a conventional rectifier using a pn junction diode for the semiconductor rectifier.
  • the commutation surge voltage can be suppressed because the reverse recovery time is short, and the effect of noise on electronic equipment can be reduced.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Rectifiers (AREA)

Abstract

L'invention concerne un système (2) redresseur produisant un redressement pleine-onde de la sortie d'un générateur (1) CA monté sur un véhicule. Dans ce système (2) rectificateur, une diode Schottky en carbure de silicium forme un contact avec un élément semi-conducteur pour produire un redressement pleine-onde de la sortie du générateur (1) CA.
PCT/JP1998/000116 1998-01-14 1998-01-14 Systeme redresseur WO1999036966A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/000116 WO1999036966A1 (fr) 1998-01-14 1998-01-14 Systeme redresseur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/000116 WO1999036966A1 (fr) 1998-01-14 1998-01-14 Systeme redresseur

Publications (1)

Publication Number Publication Date
WO1999036966A1 true WO1999036966A1 (fr) 1999-07-22

Family

ID=14207409

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/000116 WO1999036966A1 (fr) 1998-01-14 1998-01-14 Systeme redresseur

Country Status (1)

Country Link
WO (1) WO1999036966A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012125017A (ja) * 2010-12-07 2012-06-28 Mitsubishi Electric Corp パワーモジュールおよび電力変換装置
WO2013046289A1 (fr) 2011-09-26 2013-04-04 三菱電機株式会社 Redresseur d'alternateur destiné à un véhicule
WO2020026427A1 (fr) 2018-08-03 2020-02-06 三菱電機株式会社 Dispositif de redressement et appareil de génération d'énergie ca de véhicule équipé de ce dernier

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264812A (ja) * 1995-03-20 1996-10-11 Fuji Electric Co Ltd 炭化けい素ショットキーダイオードの製造方法
JPH099522A (ja) * 1995-06-23 1997-01-10 Nippondenso Co Ltd 車両用交流発電機及びショットキバリアダイオード
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264812A (ja) * 1995-03-20 1996-10-11 Fuji Electric Co Ltd 炭化けい素ショットキーダイオードの製造方法
JPH099522A (ja) * 1995-06-23 1997-01-10 Nippondenso Co Ltd 車両用交流発電機及びショットキバリアダイオード
JPH0952796A (ja) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd ＳｉＣ結晶成長方法およびＳｉＣ半導体装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012125017A (ja) * 2010-12-07 2012-06-28 Mitsubishi Electric Corp パワーモジュールおよび電力変換装置
WO2013046289A1 (fr) 2011-09-26 2013-04-04 三菱電機株式会社 Redresseur d'alternateur destiné à un véhicule
US20140048901A1 (en) * 2011-09-26 2014-02-20 Mitsubishi Electric Cororation Rectifier of alternating-current generator for vehicle
CN103636112A (zh) * 2011-09-26 2014-03-12 三菱电机株式会社 车用交流发电机的整流装置
EP2763302A1 (fr) * 2011-09-26 2014-08-06 Mitsubishi Electric Corporation Redresseur d'alternateur destiné à un véhicule
JPWO2013046289A1 (ja) * 2011-09-26 2015-03-26 三菱電機株式会社 車両用交流発電機の整流装置
EP2763302A4 (fr) * 2011-09-26 2015-04-29 Mitsubishi Electric Corp Redresseur d'alternateur destiné à un véhicule
WO2020026427A1 (fr) 2018-08-03 2020-02-06 三菱電機株式会社 Dispositif de redressement et appareil de génération d'énergie ca de véhicule équipé de ce dernier
US11932111B2 (en) 2018-08-03 2024-03-19 Mitsubishi Electric Corporation Rectifier and vehicle AC generator provided therewith

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