WO1999036966A1 - Rectifying equipment - Google Patents

Rectifying equipment Download PDF

Info

Publication number
WO1999036966A1
WO1999036966A1 PCT/JP1998/000116 JP9800116W WO9936966A1 WO 1999036966 A1 WO1999036966 A1 WO 1999036966A1 JP 9800116 W JP9800116 W JP 9800116W WO 9936966 A1 WO9936966 A1 WO 9936966A1
Authority
WO
WIPO (PCT)
Prior art keywords
rectifier
diode
generator
voltage
semiconductor
Prior art date
Application number
PCT/JP1998/000116
Other languages
French (fr)
Japanese (ja)
Inventor
Shiro Iwatani
Keiichi Komurasaki
Hirofumi Watanabe
Original Assignee
Mitsubishi Denki Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Denki Kabushiki Kaisha filed Critical Mitsubishi Denki Kabushiki Kaisha
Priority to PCT/JP1998/000116 priority Critical patent/WO1999036966A1/en
Publication of WO1999036966A1 publication Critical patent/WO1999036966A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P9/00—Arrangements for controlling electric generators for the purpose of obtaining a desired output
    • H02P9/14—Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field
    • H02P9/26—Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field using discharge tubes or semiconductor devices
    • H02P9/30—Arrangements for controlling electric generators for the purpose of obtaining a desired output by variation of field using discharge tubes or semiconductor devices using semiconductor devices

Definitions

  • the present invention uses a Schottky barrier diode for a semiconductor rectifier used in a rectifier of an on-board AC generator, thereby reducing heat generation and suppressing a commutation surge voltage to reduce an electron. It reduces the effect of noise on equipment.
  • FIG. 7 is a configuration diagram of a conventional vehicle alternator.
  • the conventional one is composed of a field coil 102 that is driven by a vehicle engine (engine) (not shown) to generate a rotating magnetic field, and an armature winding 101 that generates and outputs an AC voltage by the generated rotating magnetic field.
  • Composed AC generator 1 Rectifier 2 that rectifies the voltage generated by AC generator 1 and supplies it to battery 4 or electric load 6 from main terminal 201, and electricity that supplies the terminal voltage or voltage of battery 4
  • a voltage regulator 3 that controls the exciting current of the field coil 102 in accordance with the load 6 and adjusts the generated voltage of the AC generator 1, and a load switch 7 that connects the generated voltage of the AC generator 1 to an electric load.
  • a rectifier 2 is used to generate an AC current from a battery 4 through a voltage regulator 3 to a field coil 102 through a voltage regulator 3 when the engine is started. Excitation to field coil 102 And an auxiliary output terminal 2 0 3 for outputting.
  • FIG. 8 is a configuration diagram of a conventional vehicle alternator having no auxiliary output terminal in the rectifier 2.
  • Other configurations are the same as the configuration of the vehicle alternator shown in FIG. 9 and 10 show a conventional vehicle alternator equipped with a rectifier of a neutral diode type, and other configurations are the same as those shown in FIGS.
  • Fig. 11 shows a semiconductor rectifier element used as a rectifier 2 1 shows the structure of a pn junction diode.
  • the pn junction diode joins a P-type semiconductor and an N-type semiconductor made of silicon, and an electrode E1 is provided on the P-type semiconductor to be an anode terminal A, and an electrode E2 is provided on an N-type semiconductor to be a cathode terminal K.
  • Fig. 12 shows the forward voltage drop characteristics of the pn junction diode with respect to the forward current. If the maximum output current of the alternator 1 is 9 OA, that is, the forward voltage drop of the pn junction diode is 1, 0 V.
  • the present invention has been made to solve the above-mentioned problems, and can reduce the power loss of an AC generator for a vehicle, reduce the amount of heat generation, and suppress the commutation surge voltage of a diode. And to obtain a rectifier that can reduce the effect of noise on electronic equipment including car radios. Disclosure of the invention
  • the present invention provides a rectifier for full-wave rectification of the output of an AC generator, wherein a schottky diode made of silicon byte is used as a rectifying semiconductor element for full-wave rectification, thereby generating heat due to power loss. This reduces the commutation surge voltage of the diode and reduces the effect of noise on the mounted electronic equipment.
  • FIG. 1 is a configuration diagram of a vehicle AC generator using a rectifier with an auxiliary output terminal according to an embodiment of the present invention.
  • FIG. 2 is a configuration diagram of a vehicular AC generator using a rectifier according to another embodiment having no auxiliary output terminal.
  • FIG. 3 is a configuration diagram of a vehicle alternator using a rectifier according to another embodiment of a neutral point type with an auxiliary output terminal.
  • FIG. 4 is a configuration diagram of a vehicle alternator using a neutral point diode rectifier according to another embodiment having no auxiliary output terminal.
  • FIG. 5 is a cross-sectional view showing a structure of a Schottky barrier diode used in the rectifier according to the present embodiment.
  • Fig. 6 is a diagram showing the voltage drop characteristics with respect to the forward current in a Schottky barrier diode.
  • Fig. 7 is a configuration diagram of a vehicle AC generator using a conventional rectifier with an auxiliary output terminal.
  • FIG. 8 is a configuration diagram of a vehicular AC generator using a conventional rectifier and having no auxiliary output terminal.
  • Fig. 9 is a block diagram of a vehicle alternator using a conventional rectifier of neutral point type with an auxiliary output terminal.
  • FIG. 10 is a configuration diagram of a vehicle alternator using a conventional rectifier of a neutral point diode type having no auxiliary output terminal.
  • FIG. 11 is a sectional view showing the structure of an 11 pn junction diode.
  • FIG. 12 is a diagram showing a voltage drop characteristic with respect to a forward current in a 12n junction diode.
  • Figure 1 is a block diagram of an automotive alternator that uses a Schottky barrier diode as a semiconductor rectifier in a rectifier with an auxiliary output terminal.
  • the difference between this embodiment and the conventional vehicle AC generator (Fig. 7) is that the semiconductor rectifier of rectifier 2 has a pn junction diode. A short-distance barrier was used instead of the gate, and the same applies to other configurations.
  • Figures 2, 3, and 4 correspond to the conventional automotive alternator shown in Figures 8, 9, and 10, respectively, and the semiconductor rectifier also uses a Schottky diode instead of a pn junction diode. Is used.
  • a Schottky barrier / diode is a metal-semiconductor junction with a Schottky barrier, in which metal and semiconductor are provided with electrode terminals. It shows current-voltage characteristics very similar to the diode of a pn junction, but generally the forward rise voltage is low due to the low internal potential.
  • the Schottky barrier diode is a majority carrier device in which the majority carrier controls the operation.Therefore, there is no accumulation effect of the minority carrier in the pn junction. . In contrast, the pn junction diode has a reverse recovery time on the order of ⁇ s.
  • FIG. 5 is a cross-sectional view showing the structure of the shot barrier barrier diode.
  • the Schottky barrier diode is formed by joining an n-type semiconductor consisting of barrier metal BM and SiC. Then, an anode terminal A is provided on the barrier metal B M via the electrode E 1, and a cathode terminal K is provided on the n-type semiconductor through the electrode E 2.
  • Figure 6 shows the voltage drop characteristics with respect to the forward current in this Schottky barrier diode. According to this characteristic, when the maximum output current of the alternator 1 is assumed to be 9 O A, the forward voltage drop of the Schottky barrier diode is 0.5 V.
  • the power loss can be reduced to 90W, which is half that in the case where a pn junction diode is used for the semiconductor rectifier, and the output of the AC generator 1 can be increased by the reduced power loss.
  • the capacity of the heat sink for radiating the heat generated by the power loss is reduced, and the mounting area of the rectifier can be reduced.
  • the reverse recovery time is on the order of ⁇ s compared to the pn junction diode, the commutation surge voltage generated during commutation commutation can be suppressed, and the effect of noise on electronic equipment including car radios can be reduced. it can.
  • the rectifier according to the present invention uses a Schottky barrier diode for the semiconductor rectifier, thereby reducing power loss as compared with a conventional rectifier using a pn junction diode for the semiconductor rectifier.
  • the commutation surge voltage can be suppressed because the reverse recovery time is short, and the effect of noise on electronic equipment can be reduced.

Abstract

A rectifying equipment (2) which full-wave rectifies the output of an AC generator (1) mounted on a vehicle. In the rectifying equipment (2), a Schottky diode made of silicon carbide is used for a semiconductor element for rectification which full-wave rectifies the output of the AC generator (1).

Description

明細書  Specification
技術分野 Technical field
この発明は、 車両搭載用の交流発電機における整流装置に用いられる半導体整 流素子にショッ トキ一バリア ·ダイォードを用いることで、 発熱量を減少させ、 且つ、 転流サージ電圧を抑制して電子機器へのノイズの影響を軽減するものであ  The present invention uses a Schottky barrier diode for a semiconductor rectifier used in a rectifier of an on-board AC generator, thereby reducing heat generation and suppressing a commutation surge voltage to reduce an electron. It reduces the effect of noise on equipment.
背景技術 Background art
図 7は従来の車両用交流発電機の構成図である。 従来のものは、 図示しない車 両用エンジン （機関） によって駆動されて回転磁界を発生する界磁コイル 1 0 2 及び発生した回転磁界により交流電圧を発生して出力する電機子巻線 1 0 1から 構成される交流発電機 1、 交流発電機 1の発電電圧を整流して主端子 2 0 1より バッテリ 4あるいは電気負荷 6に供給する整流器 2、 バッテリ 4の端子電圧ある いは電圧を供給する電気負荷 6に応じて界磁コィル 1 0 2の励磁電流を制御し、 交流発電機 1の発電電圧を調整する電圧調整器 3、 交流発電機 1の発電電圧を電 気負荷に接続する負荷スィツチ 7、 機関の始動時に電圧調整器 3を通してバッテ リ 4より界磁コイル 1 0 2に励磁電流を流すキースィツチ 5より構成されている 尚、 整流器 2は交流発電機 1を自励式にて発電する際に界磁コイル 1 0 2に励 磁電流を出力する補助出力端子 2 0 3を備えている。  FIG. 7 is a configuration diagram of a conventional vehicle alternator. The conventional one is composed of a field coil 102 that is driven by a vehicle engine (engine) (not shown) to generate a rotating magnetic field, and an armature winding 101 that generates and outputs an AC voltage by the generated rotating magnetic field. Composed AC generator 1, Rectifier 2 that rectifies the voltage generated by AC generator 1 and supplies it to battery 4 or electric load 6 from main terminal 201, and electricity that supplies the terminal voltage or voltage of battery 4 A voltage regulator 3 that controls the exciting current of the field coil 102 in accordance with the load 6 and adjusts the generated voltage of the AC generator 1, and a load switch 7 that connects the generated voltage of the AC generator 1 to an electric load. A rectifier 2 is used to generate an AC current from a battery 4 through a voltage regulator 3 to a field coil 102 through a voltage regulator 3 when the engine is started. Excitation to field coil 102 And an auxiliary output terminal 2 0 3 for outputting.
図 8は整流器 2に補助出力端子を持たない従来の車両用交流発電機の構成図で あり、 他の構成に関しては図 7に示す車両の交流発電機の構成と変わらない。 また、 図 9、 図 1 0は従来の車両の交流発電機において中性点ダイオード方式 の整流器を備えたものであり、 他の構成に関しては図 7、 図 8のものと変わらな い。  FIG. 8 is a configuration diagram of a conventional vehicle alternator having no auxiliary output terminal in the rectifier 2. Other configurations are the same as the configuration of the vehicle alternator shown in FIG. 9 and 10 show a conventional vehicle alternator equipped with a rectifier of a neutral diode type, and other configurations are the same as those shown in FIGS.
図 1 1に整流器 2に用 、る半導体整流素子であるシリコンダイオードとしての p n接合ダイォードの構造を示す。 p n接合ダイォードはシリコンからなる P型 半導体と N型半導体とを接合し、 P型半導体に電極 E 1を設けてアノード端子 A とし、 N型半導体に電極 E 2を設けてカソード端子 Kとする。 Fig. 11 shows a semiconductor rectifier element used as a rectifier 2 1 shows the structure of a pn junction diode. The pn junction diode joins a P-type semiconductor and an N-type semiconductor made of silicon, and an electrode E1 is provided on the P-type semiconductor to be an anode terminal A, and an electrode E2 is provided on an N-type semiconductor to be a cathode terminal K.
図 1 2は p n接合ダイォードにおける順方向電流に対する順方向電圧降下特性 を示し、 交流発電機 1の最大出力電流を仮に 9 O Aとした時、 即ち、 p n接合ダ ィオードの順方向電圧降下は 1 , 0 Vである。  Fig. 12 shows the forward voltage drop characteristics of the pn junction diode with respect to the forward current.If the maximum output current of the alternator 1 is 9 OA, that is, the forward voltage drop of the pn junction diode is 1, 0 V.
しかし、 交流発電機 1の整流器 2に p n接合ダイオードを使用すると、 交流発 電機 1が最大電流出力時に正側ダイォードで 9 0 A x 1. 0 = 9 0 W、 負側ダイ ォードでも 9 0 A x 1 . 0 = 9 0Wであり、 整流器 2は合計として 9 0 W+ 9 0 W= 1 8 0 Wの電力損失が発生する。 そのため、 整流器 2は電力損失による発熱 を放熱し、 ダイォードを保護するための大容量のヒートシンクが必要であった。 この発明は上記のような問題点を解消するためになされたもので、 車両用の交 流発電機の電力損失を低減すると共に、 発熱量も減少でき、 更に、 ダイオードの 転流サージ電圧を抑制してカーラジオを含む電子機器へのノイズの影響を軽減で きる整流装置を得ることを目的とする。 発明の開示  However, if a pn junction diode is used for the rectifier 2 of the AC generator 1, 90 A x 1.0 = 90 W on the positive diode when the AC generator 1 outputs the maximum current, and 90 A on the negative diode x 1.0 = 90 W, and the rectifier 2 generates 90 W + 90 W = 180 W of power loss in total. Therefore, the rectifier 2 needed to dissipate the heat generated by the power loss and provide a large-capacity heat sink to protect the diode. The present invention has been made to solve the above-mentioned problems, and can reduce the power loss of an AC generator for a vehicle, reduce the amount of heat generation, and suppress the commutation surge voltage of a diode. And to obtain a rectifier that can reduce the effect of noise on electronic equipment including car radios. Disclosure of the invention
本発明は、 交流発電機の出力を全波整流する整流装置において、 全波整流する 整流用半導体素子としてシリコン力一バイトを素材とするショッ トキ一ダイォー ドを用いたことで、 電力損失による発熱を減少でき、 ダイオードの転流サージ電 圧を抑制して搭載された電子機器へのノイズの影響を軽減する。  The present invention provides a rectifier for full-wave rectification of the output of an AC generator, wherein a schottky diode made of silicon byte is used as a rectifying semiconductor element for full-wave rectification, thereby generating heat due to power loss. This reduces the commutation surge voltage of the diode and reduces the effect of noise on the mounted electronic equipment.
2. シリコン力一バイトを素材とするショッ トキ一ダイォ一ドを、 交流発電機の 発電出力を全波整流する整流用半導体素子として用いたことで、 電力損失による 発熱を減少できるためヒートシンクの容量を減少でき、 またダイォードの転流サ 一ジ電圧を抑制して車両に搭載した電子機器へのノィズの影響を軽減できる。 図面の簡単な説明 図 1 この発明の一実施の形態に係る補助出力端子付き整流装置を用いた車両 用交流発電機の構成図である。 2. The use of a short-circuit diode made of one-byte silicon power as a rectifying semiconductor device that rectifies the full-wave rectification of the power output of the AC generator, thereby reducing heat loss due to power loss and heat sink capacity. In addition, the commutation surge voltage of the diode can be suppressed to reduce the effect of noise on the electronic equipment mounted on the vehicle. BRIEF DESCRIPTION OF THE FIGURES FIG. 1 is a configuration diagram of a vehicle AC generator using a rectifier with an auxiliary output terminal according to an embodiment of the present invention.
図 2 捕助出力端子を有さない他の実施の形態に係る整流装置を用いた車両用 交流発電機の構成図である。  FIG. 2 is a configuration diagram of a vehicular AC generator using a rectifier according to another embodiment having no auxiliary output terminal.
図 3 補助出力端子付きの中性点ダイォード方式の他の実施の形態による整流 装置を用いた車両用交流発電機の構成図である。  FIG. 3 is a configuration diagram of a vehicle alternator using a rectifier according to another embodiment of a neutral point type with an auxiliary output terminal.
図 4 補助出力端子を有さない他の実施の形態に係る中性点ダイォード方式の 整流装置を用いた車両用交流発電機の構成図である。  FIG. 4 is a configuration diagram of a vehicle alternator using a neutral point diode rectifier according to another embodiment having no auxiliary output terminal.
図 5 本実施の形態に係る整流装置に用いるショッ トキ一バリアダイォードの 構造を示す断面図である。  FIG. 5 is a cross-sectional view showing a structure of a Schottky barrier diode used in the rectifier according to the present embodiment.
図 6 ショッ トキ一バリアダイォードにおける順方向電流に対する電圧降下特 性を示した図である。  Fig. 6 is a diagram showing the voltage drop characteristics with respect to the forward current in a Schottky barrier diode.
図 7 補助出力端子付きの従来の整流装置を用いた車両用交流発電機の構成図 である。  Fig. 7 is a configuration diagram of a vehicle AC generator using a conventional rectifier with an auxiliary output terminal.
図 8 補助出力端子を有さな 、従来の整流装置を用いた車両用交流発電機の構 成図である。  FIG. 8 is a configuration diagram of a vehicular AC generator using a conventional rectifier and having no auxiliary output terminal.
図 9 補助出力端子付きの中性点ダイォード方式の従来の整流装置を用いた車 両用交流発電機の構成図である。  Fig. 9 is a block diagram of a vehicle alternator using a conventional rectifier of neutral point type with an auxiliary output terminal.
図 1 0 補助出力端子を有さない中性点ダイォード方式の従来の整流装置を用 t、た車両用交流発電機の構成図である。  FIG. 10 is a configuration diagram of a vehicle alternator using a conventional rectifier of a neutral point diode type having no auxiliary output terminal.
図 1 1 p n接合ダイオードの構造を示す断面図である。  FIG. 11 is a sectional view showing the structure of an 11 pn junction diode.
図 1 2 n接合ダイォードにおける順方向電流に対する電圧降下特性を示し た図である。 発明を実施するための最良の形態 '  FIG. 12 is a diagram showing a voltage drop characteristic with respect to a forward current in a 12n junction diode. BEST MODE FOR CARRYING OUT THE INVENTION ''
以下、 この発明の実施の形態を図について説明する。 図 1は補助出力端子付き の整流器における半導体整流素子にショッ トキ一バリア ·ダイォードを使用した 車両用交流発電機の構成図である。 尚、 本実施の形態と従来における車両用交流 発電機 （図 7 ) の構成上の相違は整流器 2の半導体整流素子に p n接合ダイォー ドの替わりにショッ トキ一バリア ·ダイォードを用いたことであり、 他の構成に ついては同様である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Figure 1 is a block diagram of an automotive alternator that uses a Schottky barrier diode as a semiconductor rectifier in a rectifier with an auxiliary output terminal. The difference between this embodiment and the conventional vehicle AC generator (Fig. 7) is that the semiconductor rectifier of rectifier 2 has a pn junction diode. A short-distance barrier was used instead of the gate, and the same applies to other configurations.
また、 図 2、 3、 4はそれぞれ図 8、 9、 1 0に示す従来の車両用交流発電機 に相当するものであり、 同じく半導体整流素子に p n接合ダイォードの替わりに ショッ トキ一バリァ ·ダイォードを用いている。  Figures 2, 3, and 4 correspond to the conventional automotive alternator shown in Figures 8, 9, and 10, respectively, and the semiconductor rectifier also uses a Schottky diode instead of a pn junction diode. Is used.
ここで本実施の形態の動作を説明する前にショッ トキ一バリァ ·ダイォードの 概要について説明する。 ショッ トキ一バリア .ダイォードとはショッ トキ一障害 を有する金属一半導体接合で、 金属と半導体に電極端子を設けたダイォードであ る。 p n接合のダイォ一ドによく似た電流—電圧特性を示すが、 一般に順方向の 立上り電圧は、 内部電位が低いために低い。  Before describing the operation of the present embodiment, an outline of the shot barrier diode will be described. A Schottky barrier / diode is a metal-semiconductor junction with a Schottky barrier, in which metal and semiconductor are provided with electrode terminals. It shows current-voltage characteristics very similar to the diode of a pn junction, but generally the forward rise voltage is low due to the low internal potential.
また、 ショッ トキ一バリア ·ダイォードは多数キヤリアが動作を支配する多数 キャリア 'デバイスであるため、 p n接合における少数キヤリアの蓄積効果がな いためスイッチング速度が速く、 逆回復時間が n sオーダで非常に短い。 これに 対して p n接合ダイォードは逆回復時間が^ sオーダである。  In addition, the Schottky barrier diode is a majority carrier device in which the majority carrier controls the operation.Therefore, there is no accumulation effect of the minority carrier in the pn junction. . In contrast, the pn junction diode has a reverse recovery time on the order of ^ s.
従来 S iを半導体材料とするショッ トキーバリア ·ダイォ一ドでは耐圧の高い ものを作ることが困難とされていたが、 S i C (シリコン力一バイト） を半導体 材料とすることで、 バンドギャップが広く、 絶縁破壊強度が高くなり、 高耐圧で 漏れ電流の少ないショッ トキ一バリア ·ダイォードを作ることが可能となってい る  Conventionally, it has been difficult to produce a high-withstand-voltage Schottky barrier diode using Si as the semiconductor material. However, using SiC (one byte of silicon) as the semiconductor material increases the band gap. Wide, high breakdown strength, high breakdown voltage, low leakage current, short-circuit barrier diode
図 5はショッ トキ一バリア ·ダィォ一ドの構造を示す断面図である。 ショッ ト キーバリア ·ダイオードは図から明らかなようにバリア金属 B Mと S i Cからな る n型半導体が接合されて構成されている。 そして、 バリア金属 B Mに電極 E 1 を介してアノード端子 Aを設け、 n型半導体に電極 E 2を通してカーソド端子 K を設けてある。  FIG. 5 is a cross-sectional view showing the structure of the shot barrier barrier diode. As is clear from the figure, the Schottky barrier diode is formed by joining an n-type semiconductor consisting of barrier metal BM and SiC. Then, an anode terminal A is provided on the barrier metal B M via the electrode E 1, and a cathode terminal K is provided on the n-type semiconductor through the electrode E 2.
このショッ トキ一バリア ·ダイォードにおける順方向電流に対する電圧降下特 性を図 6に示す。 この特性によれば、 交流発電機 1の最大出力電流を仮に 9 O A とした時、 ショッ トキ一バリア ·ダイォ一ドの順方向電圧降下は 0. 5 Vである Figure 6 shows the voltage drop characteristics with respect to the forward current in this Schottky barrier diode. According to this characteristic, when the maximum output current of the alternator 1 is assumed to be 9 O A, the forward voltage drop of the Schottky barrier diode is 0.5 V.
。 従って、 交流発電機 1の整流器 2にショッ トキ一バリア ·ダイォードを使用す ると、 交流発電機 1が最大電流出力時に正側ダイォードで 9 0 A x 0. 5 = 4 5 W、 負側ダイードでも 9 0 A x 0. 5 = 4 5 Wである。 . Therefore, if a schottky barrier diode is used for the rectifier 2 of the alternator 1, when the alternator 1 has the maximum current output, 90 A x 0.5 = 4.5 W, 90 A x 0.5 = 45 W for the negative diode.
これは半導体整流素子に p n接合ダイォードを用いた場合に比べ電力損失は半 分の 9 0Wに抑えることができ、 また電力損失が減少した分、 交流発電機 1の出 力増加に寄与できる。 そして電力損失に伴う発熱を放熱するためのヒートシンク の容量も軽減し、 整流器の実装面積を減少できる。  This means that the power loss can be reduced to 90W, which is half that in the case where a pn junction diode is used for the semiconductor rectifier, and the output of the AC generator 1 can be increased by the reduced power loss. In addition, the capacity of the heat sink for radiating the heat generated by the power loss is reduced, and the mounting area of the rectifier can be reduced.
また、 逆回復時間が ρ n接合ダイォードに比べて ^ sオーダと低いため整流転 流時に発生する転流サージ電圧を抑制でき、 カーラジオを含む電子機器へのノィ ズの影響を軽減させることができる。 産業上の利用の可能性  Also, since the reverse recovery time is on the order of ^ s compared to the pn junction diode, the commutation surge voltage generated during commutation commutation can be suppressed, and the effect of noise on electronic equipment including car radios can be reduced. it can. Industrial applicability
以上のように、 本発明に係る整流装置は、 半導体整流素子にショッ トキ一バリ ァ ·ダイォードを用いることで、 従来の p n接合ダイォードを半導体整流素子に 用いた整流装置に比較して電力損失を減少させることができると共に、 逆回復時 間が短いため転流サージ電圧を抑制でき、 電子機器へのノイズの影響を軽減させ ることができる。  As described above, the rectifier according to the present invention uses a Schottky barrier diode for the semiconductor rectifier, thereby reducing power loss as compared with a conventional rectifier using a pn junction diode for the semiconductor rectifier. The commutation surge voltage can be suppressed because the reverse recovery time is short, and the effect of noise on electronic equipment can be reduced.

Claims

請求の範囲 The scope of the claims
1. 交流発電機の出力を全波整流する整流装置において、 前記全波整流する整流 用半導体素子としてシリコンカーバイ トを素材とするショッ トキ一ダイオードを 用いたことを特徴とする整流装置。  1. A rectifier for full-wave rectifying the output of an AC generator, wherein a schottky diode made of silicon carbide is used as the rectifying semiconductor element for full-wave rectification.
2. シリコンカーバイ トを素材とするショットキ一ダイオードを、 車両用交流発 電機の発電出力を全波整流する整流用半導体素子として用いたことを特徴とする 請求項 1に記載の整流装置。 2. The rectifier according to claim 1, wherein the Schottky diode made of silicon carbide is used as a rectifying semiconductor element for full-wave rectifying the power output of the vehicle AC generator.
PCT/JP1998/000116 1998-01-14 1998-01-14 Rectifying equipment WO1999036966A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/000116 WO1999036966A1 (en) 1998-01-14 1998-01-14 Rectifying equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/000116 WO1999036966A1 (en) 1998-01-14 1998-01-14 Rectifying equipment

Publications (1)

Publication Number Publication Date
WO1999036966A1 true WO1999036966A1 (en) 1999-07-22

Family

ID=14207409

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/000116 WO1999036966A1 (en) 1998-01-14 1998-01-14 Rectifying equipment

Country Status (1)

Country Link
WO (1) WO1999036966A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012125017A (en) * 2010-12-07 2012-06-28 Mitsubishi Electric Corp Power module and power converter
WO2013046289A1 (en) 2011-09-26 2013-04-04 三菱電機株式会社 Rectifier of alternating-current generator for vehicle
WO2020026427A1 (en) 2018-08-03 2020-02-06 三菱電機株式会社 Rectification device and vehicle ac power generating apparatus provided with same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264812A (en) * 1995-03-20 1996-10-11 Fuji Electric Co Ltd Method of manufacturing silicon carbide schottky diode
JPH099522A (en) * 1995-06-23 1997-01-10 Nippondenso Co Ltd Vehicle ac generator and schottky barrier diode
JPH0952796A (en) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd Method for growing silicon carbide crystal and silicon carbide semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264812A (en) * 1995-03-20 1996-10-11 Fuji Electric Co Ltd Method of manufacturing silicon carbide schottky diode
JPH099522A (en) * 1995-06-23 1997-01-10 Nippondenso Co Ltd Vehicle ac generator and schottky barrier diode
JPH0952796A (en) * 1995-08-18 1997-02-25 Fuji Electric Co Ltd Method for growing silicon carbide crystal and silicon carbide semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012125017A (en) * 2010-12-07 2012-06-28 Mitsubishi Electric Corp Power module and power converter
WO2013046289A1 (en) 2011-09-26 2013-04-04 三菱電機株式会社 Rectifier of alternating-current generator for vehicle
US20140048901A1 (en) * 2011-09-26 2014-02-20 Mitsubishi Electric Cororation Rectifier of alternating-current generator for vehicle
CN103636112A (en) * 2011-09-26 2014-03-12 三菱电机株式会社 Rectifier of alternating-current generator for vehicle
EP2763302A1 (en) * 2011-09-26 2014-08-06 Mitsubishi Electric Corporation Rectifier of alternating-current generator for vehicle
JPWO2013046289A1 (en) * 2011-09-26 2015-03-26 三菱電機株式会社 AC generator rectifier for vehicle
EP2763302A4 (en) * 2011-09-26 2015-04-29 Mitsubishi Electric Corp Rectifier of alternating-current generator for vehicle
WO2020026427A1 (en) 2018-08-03 2020-02-06 三菱電機株式会社 Rectification device and vehicle ac power generating apparatus provided with same
US11932111B2 (en) 2018-08-03 2024-03-19 Mitsubishi Electric Corporation Rectifier and vehicle AC generator provided therewith

Similar Documents

Publication Publication Date Title
US9812895B2 (en) In-vehicle charger
US5726557A (en) Vehicular electric power system
JP3555250B2 (en) Automotive alternators and Schottky barrier diodes
US5608616A (en) Power converter
JP4270279B2 (en) Control device for vehicle alternator
RU2615170C1 (en) Energy conversion unit
EP0657992B1 (en) Alternating current generator for motor vehicles
KR20070089677A (en) Semiconductor device and rectifier arrangement
JP2004187346A (en) Generator motor system for vehicle
JP2014502425A (en) Generator device for supplying voltage to automobiles
US8497664B2 (en) High efficiency multi-phase generator
US6731081B2 (en) Vehicle alternator having rectifier circuit using diode and FET
KR100267830B1 (en) Ac generator for vehicle
US7084610B2 (en) Alternator rectifier
EP0657947B1 (en) Power converter
WO1999036966A1 (en) Rectifying equipment
US6744240B2 (en) Method for improving the efficiency of an electrical machine
US6359800B1 (en) Direct current electric power generation system with variable speed alternating current generators
JP5734446B2 (en) AC generator rectifier for vehicle
TW202224327A (en) Power conversion circuit and control system
TW202207600A (en) Power conversion circuit and power conversion system
JPH05276800A (en) Device for limiting terminal voltage of ac generator
KR100573438B1 (en) AC generator for vehicle
JP2595243B2 (en) Diode bridge for full-wave rectification for vehicles
JP2011234614A (en) Rectifier bridge circuit

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN JP KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): DE FR GB

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: KR

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

Ref document number: 2000540582

Format of ref document f/p: F