WO1999023692A1 - Aligner and exposure method - Google Patents

Aligner and exposure method

Info

Publication number
WO1999023692A1
WO1999023692A1 PCT/JP1998/004843 JP9804843W WO9923692A1 WO 1999023692 A1 WO1999023692 A1 WO 1999023692A1 JP 9804843 W JP9804843 W JP 9804843W WO 9923692 A1 WO9923692 A1 WO 9923692A1
Authority
WO
Grant status
Application
Patent type
Prior art keywords
stage
exposure
measurement
wafer
measuring
Prior art date
Application number
PCT/JP1998/004843
Other languages
French (fr)
Japanese (ja)
Inventor
Tetsuo Taniguchi
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70058Mask illumination systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70241Optical aspects of refractive systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control, in all parts of the microlithographic apparatus, e.g. pulse length control, light interruption
    • G03F7/70558Dose control, i.e. achievement of a desired dose
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70691Handling of masks or wafers
    • G03F7/70716Stages

Abstract

A wafer is put on a wafer stage which is placed on a surface plate transferably in an X-direction and a Y-direction. The pattern image of a reticle is exposed in an exposure region on the wafer and the reticle and the wafer are scanned in the Y-direction to perform exposure. A measurement stage is placed on the surface plate transferably in the X-direction and the Y-direction independently of the wafer stage. A space image detection system which includes a dose monitor, an illuminance unevenness sensor and a measurement plate in which a slit is formed is set up on the measurement stage. As the wafer stage may have only minimum functions necessary for exposure, the size and weight of the wafer stage can be reduced. With this constitution, the size of a stage for the alignment of a reticle or a wafer can be reduced while the function of measuring the state of an exposing light or image forming characteristics is maintained.

Description

Specification

Exposure apparatus and an exposure method TECHNICAL FIELD

The present invention is, for example, a semiconductor device, a liquid crystal display device, or to a thin film magnetic in extent lithographic Ye for producing head or the like, an exposure apparatus and is used in order to transfer the mask pattern onto a photosensitive substrate It relates exposure method, in particular exposure beam state, or is suitably used in an exposure apparatus equipped with a measurement instrumentation g for measuring the imaging characteristics.

BACKGROUND

When manufacturing a semiconductor element or the like, in the step of transferring onto a predetermined wafer patterns Rechiku Le is the resist coating via the projection optical system as a mask under the exposure light (or a glass plate or the like), conventionally shot exposure type projection exposure apparatus (Sutetsu per) was often used. Recently, a projection optical system a pattern of large-area 稻 reticle without upsizing to transfer with high accuracy, the reticle and the step 'and' Scan to perform synchronous scanning to expose the wafer with respect to the projection optical system projection exposure apparatus of the good UNA scanning exposure type of system (scanning type exposure apparatus) have also been noted.

In these exposure devices, always proper exposure amount, and it is necessary to perform exposure with high while maintaining the imaging characteristics, the wafer stage for the reticle stage positioning the reticle, or the positioning of the wafer , the state of illumination or the like of the exposure light, and the measuring device for measuring the imaging characteristics of the projection magnification, etc. are provided. As has measuring devices provided on the wafer stage For example, aerial image for measuring the projected irradiation monitor for measuring the incident energy of the exposure light to the optical system, and the projected image position Ya co Ntorasu preparative like there is a detection system, and the like. On the other hand, the measuring device is provided on the reticle stage, for example, a reference plate index mark used for imaging characteristic measured is formed of a projection optical system.

In the above-described conventional exposure apparatus, the reticle stage, or Wehasute - using the measurement device provided in the di, together with an exposure amount of optimization can be achieved, high imaging characteristics were maintained. In contrast, the recent exposure apparatus, it is also required to increase the throughput of the exposure step in manufacturing a semiconductor device or the like (productivity). As a method for improving the throughput, in addition to the method for increasing the exposure light energy per unit time Q, by increasing the driving speed of the stage, to reduce the Sutetsubingu when Q is a Bulk exposure type, scanning exposure in the mold there is a method of shortening the Sutebbingu Tokitoi及 beauty scanning exposure during question.

Thus in order to improve the driving speed of the stage may be used to drive motors of the larger output when the stage system is the same size, the drive speed in the drive motor of the conventional same output to the inverse to improve, miniaturize the stage system, there is a need to strange weight. However, when using the drive motor of a larger output as the former, the amount of heat generated from the driving motor is increased. Heat to increase in this manner is caused subtle thermal deformation of the stage system, high positioning accuracy which is required for the exposure apparatus may not be obtained. Therefore, the sealed proof deterioration of the positioning accuracy, to improve the driving speed is as small as possible a stage system as in the latter case, be reduced in weight it is desired.

In particular, in a scanning exposure type exposure apparatus, scanning exposure during interrogation by improving the driving speed is reduced Suzo! ^ With one bushings Bok is greatly improved, also improved synchronization accuracy by connexion reticle and the wafer in the size of the stage system, imaging performance and overlay accuracy is a large advantage to improve. However, the reticle stage as in the prior art, or when various measuring devices are provided on the wafer stage, it is difficult to downsizing the stage.

Furthermore, the reticle stage, or the state of the exposure light on the wafer stage, or if the measuring device for measuring the Yuizotoku, etc. are provided, along with heat source normally amplifiers such as in the measurement device comes , the temperature of the gauge measuring device by the irradiation of the exposure light is gradually increased during the measurement. As a result, the reticle stage, or Wehasu Te one di is subtly thermal deformation, positioning accuracy and overlay accuracy and the like can also deteriorate. At present, although the deterioration of such positioning accuracy due to the temperature rise of the measuring apparatus is small as in the future, as the circuit pattern of a semiconductor device is further miniaturized, the need to suppress the influence of the temperature rise of the measuring device It is expected to increase.

The present invention has been made in view of the points mow 斯, state of the exposure light, or a function of measuring the imaging characteristics while maintaining a reticle, or a stage for positioning the wafer to provide an exposure apparatus capable of downsizing a first object.

The invention further state of the exposure light, or both when equipped with a measuring device for measuring the imaging characteristics, to provide an exposure light device capable 蛏減 the adverse effects of temperature rise at the time of measurement using the measurement device the a second object.

The present invention has been made in view of the points mow 斯, state of the exposure light, or a function of measuring the imaging characteristics while maintaining a reticle, or a stage for positioning the wafer to provide an exposure method capable miniaturized the third object of.

The invention further state of the exposure light, or comprises a measuring device for measuring the imaging characteristics together, to provide a EXPOSURE method can reduce the adverse effects of temperature rise at the time of measurement using the measurement device the fourth object of. Disclosure of the Invention

The first exposure apparatus according to the present invention, the mobile in an exposure apparatus for transferring a pattern formed on a mask onto a substrate using an exposure beam, the mask and the predetermined area holds one of its substrate a first stage of a second stage which is independent of its first stage, but having a measuring device for measuring the state of the exposure beam, a mounted on the second stage .

According to the present invention, with it in its first stage to use the original exposure to have only minimum functions necessary for exposure, atmospheric of the first stage to a minimum since it, miniaturization of the stage, allowing weight reduction. Hand, it is not necessary directly to the exposure, measuring device for measuring the state of the illumination or the like of the exposure beam, to be mounted on a separate second stage, the state of the exposure beam can be measured.

In this case, an example of the measurement device, a photoelectric sensor for measuring the overall Pawa one exposure beam, or an uneven illuminance sensor for measuring the illuminance distribution of the exposure beam. Also, the second stage, on the way of example for example moving plane of the first stage, and its first stage in which is movably arranged independently. In this case, by placing the second stage instead of the first stage, the mask, or state of the exposure beam in the vicinity of the surface on which the substrate is actually placed it can be measured.

Further, it is desirable to provide a control device for the exposure beam moves the first stage between a position and its exposure beam such that irradiated les, position to be irradiated. In this case, at the time of measuring the first stage it is retracted from the irradiation position of the exposure beam.

Further, it is desirable to provide a control device for moving the second stage between a position where the exposure beam is irradiated and position of the exposure beam is not irradiated. This Yotsute, during measurement the measuring device of the second stage moves the irradiation position of the exposure beam.

Furthermore, when located at a position where the first stage is irradiated with the exposure beam, the second stage that an exposure beam is irradiated to record, it is desirable to provide a control device for positioning a position. Yotsute thereto, exposure time, and are selectively used 2 Tsunosu stage efficient at the time of measurement.

Then, the second exposure apparatus according to the present invention, holds an exposure apparatus for projecting onto a substrate through a pattern formed on a mask projection optical system, one what Re of its mask and the substrate a predetermined a first stage for moving the area, measurements and second stage independent of its first stearyl temporarily disposed on the second stage to measure the imaging characteristic of the projection optical system apparatus and are those with a.

According to such present invention, by having only the minimum functions required for exposure in the first stage, downsizing of the first stage, it is possible to weight reduction. On the other hand, exposure to it is not necessary directly you measure the image formation characteristic such as distortion measurement apparatus, to be mounted on a separate second stage, the imaging characteristics can be measured. In this case, an example of the measurement device, the position sensor of the projected image, measurement index mark, or a measuring reference surface or the like.

Also, the second stage, on the way of example for example moving plane of the first stage, and its first stage in which is movably arranged independently. In this case, by placing the second stage instead of the first stage, imaging properties of a plane that substrate is actually located can be measured.

Further, in the first stage holds the substrate, and the position of the exposure area by the projection optical system, moves the first stage between a predetermined position outside of the exposure region it is desirable to provide a control device. In this case, at the time of measuring the first stage it is retracted from the exposure area.

Similarly, the position of the exposure area by the projection optical system, it is desirable to provide a control device for moving the second stage between a predetermined position outside of the exposure area. In this case, at the time of measuring the measurement apparatus of the second stage it is moved to the exposure area. Next, a third exposure apparatus of the present invention, an exposure apparatus for transferring onto a substrate using an exposure bi one beam the pattern formed on the mask, the measuring device is arranged to measure the state of the exposure beam a stage, a cooling device for cooling the measuring equipment provided on the stage, and has a.

According to such present invention, even if the measuring device is a temperature rise when measuring the illuminance or the like to the exposure beam using the measuring apparatus, because that its being cooled by the cooling device, the exposed portion thereof effect of temperature rise beyond - Next, a fourth exposure apparatus of the present invention, an exposure apparatus for projecting onto a substrate through a pattern formed on a mask projection optical system, imaging of the projection optical system a stage measuring device is arranged to measure the characteristics, and a cooling device for cooling the total measuring device provided on the stage, and has a.

According to such present invention, since when measuring the imaging characteristics using the measurement device As a measuring device even increased temperature, it is cooled by the cooling device, the exposed portion temperature rise impact of beyond 3

Next, a fifth exposure apparatus of the present invention, an exposure apparatus for transferring onto a substrate using a pattern formed on a mask exposure bicycloalkyl one arm, holds one what Re of the mask and its substrate disposed between the first stage for moving the predetermined region, and a second stage in which the measuring device is mounted to measure the state of the exposure beam, the first stage and its second stage Te is, those having a heat insulating member for blocking the heat conducted from the second stage, the.

According to such present invention, also include a heat source the measurement device, or even if the measuring device is a temperature rise in measuring the irradiation] ^ like exposure beam using the measuring device, the heat conduction is hindered by the heat insulating member, the exposed portion beyond the influence of the heat source and temperature on the rise.

In this case, an example of the heat insulating member is a low solids material having a thermal conductivity or temperature adjusted gas. The temperature adjusted gas, such gas being conditioned is used.

Next, a sixth exposure apparatus of the present invention, the first moving in an exposure apparatus for projecting onto a substrate through a pattern formed on a mask projection optical system, a given realm retains its substrate and the stage, a second stage measuring equipment is mounted to measure the imaging characteristic of the projection optical system, disposed between the first stage and its second stage, the second and the heat insulating portion village blocks the heat conducted from the stage, in which with a.

According to such present invention, even when the temperature rises As a measuring device when measuring the imaging characteristics using the measurement device, or even the measurement apparatus includes a heat source, in the heat insulating member since Yotsute heat conduction is inhibited, the exposed portion beyond the influence of the temperature rise.

Again, an example of the heat insulating member is a low solids material having a thermal conductivity, or the temperature adjusted gaseous.

The first exposure method according to the invention, an exposure method in which a pattern formed on a mask by using the exposure beam is transferred onto the substrate, the first stage, to retain one of the mask and its substrate and moving a predetermined region Te, the first attached to the second stage which is independent measurement device and stage, is intended to include a step of measuring a state of the exposure beam of that.

According to the present invention, with it in its first stage to use the original exposure to have only minimum functions necessary for exposure, atmospheric of the first stage to a minimum since it, miniaturization of the stage, allowing weight reduction. Hand, it is not necessary directly to the exposure, measuring device for measuring the state of the illumination or the like of the exposure beam, to be mounted on a separate second stage, the state of the exposure beam can be measured.

In this case, an example of the measurement device, a photoelectric sensor for measuring the total power of the exposure beam, or an uneven illuminance sensor for measuring the illuminance distribution of the exposure beam. Also, the second stage, on the way of example for example moving plane of the first stage, and its first stage in which is movably arranged independently. In this case, by placing the second stage instead of the first stage, the mask, or state of the exposure beam in the vicinity of the surface on which the substrate is actually placed it can be measured.

Also, movement of the first stage, the exposure beam position and its where the exposure beam is irradiated is performed in question and a position which is not irradiated is desirable. In this case, at the time of measuring the first stage it is retracted from the irradiation position of the exposure beam.

Also, the second stage, it is desirable that the position and its exposure beam whose exposure beam is irradiated further comprises a step of moving in Question a position not irradiated. This Yotsute, during measurement the measuring device of the second stage moves the irradiation position of the exposure beam.

Also, the first stage when located at a position to be irradiated with the exposure beam, the second stage that an exposure beam is irradiated to record, further include stearyl-up to position the desired position. Yotsute thereto, during exposure, and it is selectively used effectively two stage during measurement.

Next, a second exposure method according to the invention, an exposure method in which a pattern formed on a mask through a projection optical system for projecting onto the substrate, the first stage, one of the mask and its substrate and moving a predetermined region holding the one, the first of which is disposed on the second stage that is independent measurement device and stage, and a step of measuring the imaging characteristic of the projection optical system it is intended to include.

According to the present invention, with it in its first stage to use the original exposure to have only minimum functions necessary for exposure, a small-type of the first stage, can be lighter become. On the other hand, exposure to it is not necessary directly measuring device for measuring the imaging characteristics of the disk torsion or the like, to be mounted on a separate second stage, the imaging characteristics can be measured.

In this case, an example of the measurement device, the position sensor of the projected image, measurement index mark, or a measuring reference surface or the like.

Also, the second stage, on the way of example for example moving plane of the first stage, and its first stage in which is movably arranged independently. In this case, by placing the second stage instead of the first stage, imaging properties of a plane that substrate is actually located can be measured.

Also, the first stage holds the substrate, the movement of the first stage, between a position in the exposure area by the projection optical system and the constant position outside the at the exposure area done it is desirable. In this case, at the time of measuring the first stage it is retracted from the exposure area.

Similarly, the second stage, and the this further comprising the step of moving in question and the position in the exposure area by the projection optical system to a predetermined position outside of the exposure region is desirable. In this case, at the time of measuring the measurement apparatus of the second stage it is moved to the exposure area.

Next, a third exposure method of the present invention is an exposure method of transferring onto a substrate a pattern formed on a mask by using the exposure beam, the measuring equipment arranged on the stage, of the exposure beam state a step of measuring a is a provided a cooling device in this stage, is intended to include a step of cooling the measuring device.

According to such present invention, even when measuring the illuminance or the like to the exposure beam using the measuring device the measurement device rises temperature, because that is by connexion cooled to the cooling apparatus, the exposure unit It is beyond the influence of the temperature rise.

Next, a fourth exposure method of the present invention is an exposure method of a pattern formed on a mask through a projection optical system for projecting onto the substrate, measurement equipment arranged in stages, the projection optical system a step of measuring the imaging characteristics, is a provided a cooling device in this stage, is intended to include a step of cooling the measuring device. According to such present invention, since when measuring the imaging characteristics using the measurement device As a measuring device even increased temperature, it is cooled by the cooling device, the exposed portion temperature rise impact of beyond.

Next, a fifth exposure method of the present invention is an exposure method of transferring onto a substrate a pattern formed on a mask by using the exposure beam, the first stage, one of the mask and its substrate and moving a predetermined area or hold one, attached to the second stage measuring device includes the steps of measuring the state of the exposure-bi one beam, the first stage and its second the the arranged adiabatic member between the stages, and a step of interrupting the heat conducted from the second stage is Dressings containing.

According to such present invention, also include the measurement device is a heat source, or even the measurement apparatus increases the temperature when measuring the illuminance or the like to the exposure beam using the measuring device, the heat insulating member heat conduction is inhibited, the exposed portion the influence of the heat source and the temperature rise inferior by.

In this case, an example of the heat insulating member is a low solids material having a thermal conductivity or temperature adjusted gas. The temperature adjusted gas, such gas being conditioned is used.

Next, a sixth exposure method of the present invention is an exposure method for a pattern Ichin formed on a mask through a projection optical system for projecting onto the substrate, the first stage, holding the substrate predetermined and moving the area, it mounted on a second stage the meter measuring device includes the steps of measuring the imaging characteristic of the projection optical system, the first stearyl - the di and its second stage the arrangement adiabatic member between, according to c such present invention is intended to include a step of interrupting the heat conducted from the second stages, when measuring the imaging characteristics using the measurement device even Niso of the measuring device is increased temperature, or also include the measurement apparatus the heat source, the heat transfer is inhibited by the heat insulating member, the exposed portion beyond the influence of the temperature rise.

Again, an example of the heat insulating member is a low solids material having a thermal conductivity, or the temperature adjusted gaseous. BRIEF DESCRIPTION OF THE DRAWINGS

Figure 1 is Ru schematic configuration view showing a projection exposure apparatus according to a first embodiment of the present invention.

Figure 2 is a plan view showing the first view reticle stage RST, and the measurement stage 5.

Figure 3 is a plan view illustrating the wafer stage WST in FIG. 1, and the measurement stage 1 4.

Figure 4, in the first embodiment of the present invention, is a plan view for explaining a case of measuring the state of exposure light using the measurement stage 1 4.

Figure 5 is a wafer stage of the projection exposure apparatus of the second embodiment of the present invention, is a plan view showing a 及 beauty measurement stage.

Figure 6 is a wafer stage of the projection exposure apparatus of the second embodiment of the present invention, it is a front view showing a 及 beauty measurement stage.

7 is a third schematic configuration view, with parts cut away showing a projection exposure apparatus according to an embodiment of the present invention.

8 is a plan view showing a wafer stage of the projection exposure apparatus of FIG. 7. FIG. 9 is a view to plan view of the wafer stage of the projection exposure apparatus of the fourth embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, it described with reference to the first first per the embodiment of FIG. To FIG. 4 of the present invention.

Figure 1 shows the projection exposure apparatus of step 'and' scanning scheme used in the present embodiment, at the time of exposure in the first figure, the exposure light source, a beam shaping optical system, a fly-eye lens for the illuminance distribution uniform, the amount of light monitor, a variable aperture stop, a field stop, the exposure light IL emitted from the illumination system 1 comprising 及 beauty re, single lens system, etc., mirror one 2, and the pattern surface of the reticle R through the condenser lens 3 (the lower surface) to illuminate the Sri Tsu door-like illumination area. The exposure light IL, K r ​​F (wavelength 2 4 8 nm), or A r F (wavelength 1 9 3 nm) excimer one laser light such as, harmonics of YAG les one The, or mercury lamp i-line (wavelength 3 6 5 nm), etc. can be used. By switching the variable aperture stop in the illumination system 1, normal illumination method, the annular illumination, so - called modified illumination, desired illumination method of the lighting or the like and small coherence factor (sigma value) so as to select the It is configured. When the exposure light source is a laser light source, the light emission timing or the like is the main control system 1 0 for supervising controlling the operation of the entire apparatus is controlled via the laser power supply (not shown).

Illumination region 9 by the exposure light IL on the reticle R image of the pattern of the (second reference Figure) within the projection magnification through the projection optical system PL | 3 (] 3 is 1 Z 4 times, or 1 Bruno 5 times is reduced at a constant), follower Torejisu bets are projected Sri Tsu bets like eXPOSURE region 1 2 on the wafer W coated. Hereinafter, Ri taken parallel to Ζ axis optical axis Alpha chi of the projection optical system PL, and the non-scanning direction perpendicular to the scanning direction of the reticle R and the wafer W during scanning exposure in the plane perpendicular to the Ζ axis (i.e., the the X axis along the direction) perpendicular to the plane of FIG. 1, the scanning direction (i.e., will be described taking Υ axis along a direction) parallel to the plane of FIG. 1. First, Araimen § Lai instrument sensor 1 6 of the image processing method off 'Akushisu scheme for bets is provided adjacent to the projection optical system PL, Araime Ntosensa first detection signal the main control system 1 of 6 0 of the wafer W It is supplied to the Araimento processing system of the inner. § Rye placement sensor 1 6 is used to detect the position of such mark for alignment formed on the wafer W (wafer mark). Araime Ntosensa 1 6 detection center and the interval between the center of the projection image of the reticle R by the projection optical system PL (baseline amount) previously sought high precision, § Raimento processing system to the storage of the main control system 1 in the 0 are, the detection result of § Rye instrument sensor 1 6, a projection image of each shot area and the reticle R on the wafer W from 及 Bisono baseline amount is overlaid with high precision. Although not shown, above the reticle R are disposed reticle § Lai instrument microscope for detecting § Lai placement mark on Rechiku Honoré R.

Next, the reticle R is held by vacuum suction on the reticle stage RST, reticle stage RST, via an air one bearing on the two guide 4 A and 4 B, which are arranged parallel to the Y-direction It is freely mounted moves in the Y direction. In addition, the present embodiment, on the guide 4 A and 4 B, independently movably measurement stage 5 in the Y direction via the air bearing is placed on the reticle stage RST.

FIG. 2, Ri plan view showing a reticle stage RST and measurement stage 5, in this second view, along the guide 4 A and 4 B extending in the Y direction (scanning direction), respectively (not shown) of the reticle stage RST to be driven in the Y direction by a linear motor or the like, and a measurement stage 5 is mounted. The length of the guide 4 A, 4 B is O movement strokes of reticle stage RST during run 查露 light remote is set at least by 蝠分 the measurement stage 5 long. Moreover, Les chicle stage RST, a coarse movement stage that moves in the Y direction, in the coarse stage on two-dimensional position is constituted by combining a fine motion stage can be finely adjusted.

Then, forming the reference plate 6 consists of an elongated glass plate in the X direction is fixed on the measurement stage 5, a plurality of index marks IM for imaging characteristic measurement of the projection optical system PL on a reference plate 6 is in a predetermined arrangement It is. Reference plate 6, the illumination region 9 slit-like exposure light with respect to the reticle R, and more precisely is provided with a large enough can cover the visual field of the reticle R side of the projection optical system PL. By using the reference plate 6, it is not necessary to prepare a dedicated reticle for imaging characteristics measurement, and, since the reticle R for actual exposure also unnecessary when replacing Q with its dedicated reticle, sintered an image characteristic can be measured frequently, it is possible to accurately follow the change with time of the projection optical system PL. Thus in this example, the measurement stage 5 for the reference plate 6 is provided independently on the reticle stage RST in the come, in addition to members for measuring the reticle R is not mounted. That is, the reticle stage RST, a scan minimum required for scanning exposure, and to it Sonaere only positioning function, miniaturization of the reticle stage RST, weight reduction is realized. Therefore, it is possible to scan the reticle stage RST faster, thus improving the throughput of the exposure process. Particularly in the case of reduction projection, ΐ Ζ β times 查速 of run of the wafer stage run 查速 of the reticle stage RST (e.g. 4-fold, 5-fold, etc.) to become the upper limit of the scanning speed nearly Rechikurusute over di it may be determined, in particular throughput in this example in this case is greatly improved.

Moreover, guide 4 Alpha, 4, single Zabimu is irradiated on the laser interferometer 7 Upsilon or al Rechikurusute temporary movement mirror + Upsilon direction side of RS T installed in the + Upsilon direction relative beta, + Χ direction the laser beam is irradiated onto the movement mirror of the laser interferometer 7 X 1, 7 from X 2 Rechikurusu Te temporary RS T of + X direction side of the installed 2 axes, the laser interference interferometer 7 Upsilon, 7 X coordinate of the X 1, 7 chi 2 by the reticle stage RST, Upsilon coordinates and the angle of rotation is measured and the measured value is supplied to the main control system 1 0 of FIG. 1, the main control system 1 0 is the measured value based controlling the speed and position of the reticle stage RST via a Riniamota or the like. Moreover, Les one Zabimu is irradiated to guide 4 A, 4 moving mirror one Y-direction side of the measurement stage 5 from the laser interferometer 8 Y which are installed on one Y-direction with respect to B, Le one The Y-coordinate of the measurement stage 5, which is measured by the interferometer 8 Y is supplied to the main control system 1 0. One The optical axis of the interferometer 7 Y and 8 Y-Re Y-axis, the center of the illumination region 9 respectively along the Y direction, that is, passes through the optical axis AX of the projection optical system PL, the laser interferometer 7 Y and 8 Y are measuring the position of the scanning direction always Rechiku Le stage RST and measurement stage 5, respectively. Then, when the measurement of the imaging characteristics, and is retracted the reticle stage RST in the + Y direction, the reference plate 6 then move an measurement stage 5 so as to cover the illumination region 9 in the Y direction, the laser interferometer 7 X 1, 7 laser beam from the X 2 is so that irradiated onto the movement mirror in the + X direction sides of the measurement stage 5 out from the side of the reticle stage RST. Laser interferometer 8 Y and 7 X 1 at this time, 7 X 2 force, on the basis of the measurement values ​​obtained, et al., The main control system 1 0 controls the position of the measurement stage 5 with high accuracy through the Riyuamota like . When it is desired to align the goodness Ri high precision reference plate 6 with respect to illumination area 9 in this case, advance forms form a § Lai placement mark on the reference plate 6, the reticle § Rye placement position of the mark it Re be detected using a microscope.

On the other hand, during the measurement, the position of the non-scanning direction of the reticle stage RST is not measured, if the reticle stage RST for exposure reaches a lower illumination region 9, again the laser interferometer 7 X 1, 7 X 2 the laser beam from the will to be irradiated onto the movement mirror of the reticle stage RST. Since the final alignment is performed using the Rechikurua Raimento microscope, the laser interferometer 7 X 1, there is no disadvantage that the laser beam is interrupted from 7 X 2 - Returning to FIG. 1, the wafer W is not is held via the illustrated wafer holder on the wafer stage WST, wafer stage WST X direction via the air bearing on the surface plate 1 3 rests movably in Υ direction. The wafer stage WS Ding, Zeta direction position of the wafer W (focus position), and follower one debris which controls the tilt angle. Leveling mechanism is also incorporated. Further, Wehasute on the surface plate 1 3 - X direction via the air one bearing separately from the di-WS T, is movably, various measuring devices Υ direction is measurement stage 1 4 placed provided ing. In the measurement Stage 1 4, cJ has built-in mechanism for controlling the focus position of the upper surface.

Figure 3 is a plan view illustrating the wafer stage WST, and a measurement stage 1 4, in the FIG. 3, the interior of the surface plate 1 3 surface co I le train example in a predetermined arrangement embedded , the bottom surface of the wafer stage WST, and the magnet array are embedded with each yoke on the bottom surface of the measurement stage 1 4, the coil array, and by connexion respectively plan motor magnet array that corresponds is configured, in this planar motor wafer stage WST Te cowpea, and X direction of the measurement stage 1 4, the position in the Y direction and the angle of rotation is controlled independently of each other. Note that the planar motor is disclosed in greater detail in JP-A-8 5 1 7 5 6 No. In example embodiment.

Wafer stage WST of this example, that are provided by only the minimum functions necessary for exposure. That is, the wafer stage WST, both when provided with a focus' leveling mechanism, on the wafer stage WST, a wafer holder for attracting and holding the wafer W (the bottom side of the © E c W), for position measurement of wafer stage WST two members of a reference Ma one click plate 1-7 is fixed. On the reference mark plate 1 7, X-direction, and the reference mark as a Y-direction position reference (not shown) is formed, by detecting the position of the reference Ma one click in § Rye placement sensor 1 6 and 2 positional relationship relative to the projection image, for example, the reticle R of the wafer stage WST (wafer W) is discovered, the surface of the measurement stage 1 4, set at substantially the same height as the surface of the wafer W on the wafer stage WST It is. Then, the measurement stage 1 4, irradiation monitor 1 8 consisting of a photoelectric sensor for measuring the energy (incident E energy) per total unit time of the exposure light which has passed through the projection projection optical system PL, the projection optical measuring the illuminance unevenness sensor 1 9 made of a photoelectric sensor, and the slit 2 1 X for imaging characteristics measurement, 2 1 Y is formed for measuring the illuminance distribution on the slit-like exposure region 1 within 2 by system PL plate 2 0 is fixed. Slit DOO 2 1 X X-axis of the measuring plate 2 0, and Y-axis slit preparative 2 1 Y each condensing lens on the bottom side of, and the photoelectric sensor is disposed, from the measurement plate 2 0, and a photoelectric sensor or the like sky question image detection system is configured. Incidentally, the Sri Tsu DOO 2 IX, 2 1 Y instead of, may be used E Tsu di rectangular opening. Then, the light receiving surface of the radiation amount monitor 1 8 is formed in a size to cover the exposed area 1 2, the light receiving portions of the uneven illuminance sensor 1 9 has a pinhole-shaped, irradiation monitor 1 8 and intensity detection signals of uniformity sensor 1 9 is supplied to the main control system 1 0 of FIG. 1.

The detection signal of the photoelectric sensor of the bottom of the measuring plate 2 0 is supplied to the imaging characteristic calculation system 1 1 of FIG. 1. In this case, at the time of measurement of the imaging characteristics of the projection optical system PL, and the reference plate 6 on the measurement stage 5 on the reticle side of FIG. 2 is moved in the illumination region 9, indicators are formed in the reference plate 6 marks IM image is projected on the wafer stage side, Sri Tsu Miyako 2 1 X on the measurement plate 2 0 the image, 2 1 Y in X-direction, respectively, while scanning in the Y direction, the detection signal from the photoelectric sensor of the bottom Included free take in imaging characteristic calculation system 1 1. In imaging characteristic calculation system 1 1, the position of the image of the index mark IM and processes the detection signal, and detects the contrast, etc., curvature of the projected image from the detection result, day Storr Chillon, Beth Tofo seeking imaging characteristics, such as one Kas position outputs to the main control system 1 0. Furthermore, although not shown, a mechanism for correcting the imaging characteristics of the one Chillon such predetermined Deisuto drives the predetermined lens in the projection optical system PL is also provided, the main control system 1 0 is the correction mechanism are † »made to allow correct the imaging characteristics of the projection optical system PL via the.

In a third view, irradiation monitor 1 8 provided in the measurement stage 1 4, the uneven illuminance sensor 1 9, and the sensor such as a photoelectric sensor at the bottom of the measuring plate 20, heat source such as what Re also amplifier , and it is connected to the power and signal cables for communication. Therefore, when the sensors are mounted on the wafer stage WS T for exposure, there is a fear you deteriorate the positioning accuracy or the like by the tension of the heat source and the signal cable associated with the sensor. The thermal energy which may lead to deterioration of the positioning accuracy due to the irradiation of the exposure light during measurement, such as imaging characteristics. In this example the contrary, since these sensors are provided to the measurement stage 1 4 separated from the wafer stage WST for exposure, downsizing the wafer stage WS T, it is possible weight, for measurement reduction in positioning accuracy due to heat and thermal energy of the exposure light during measurement of the sensor can be advantageously prevented. Miniaturization of the wafer stage WS T, improves movement speed and controllability of the © E C stage WS T, throughput Bok the exposure process with a high round, the positioning accuracy and the like can be further improved - also to the base 1 3 is the laser beam is irradiated from the + Y direction the installed laser interferometer 1 5 Y a © E Ha moving mirror in the + Y direction side of the stage WS T against, laser interference biaxial installed at one X-direction Les one Zabimu is irradiated from a total of 1 5X 1, 1 5X 2 moving mirror one X-direction of the side surface of the wafer stage WS T, the laser interferometer 1 5 Y, 1 5 X 1, 1 5 X 2 by the wafer stage WS X coordinate of the T, Y coordinates and the angle of rotation is measured and the measured value is supplied to the main control system 1 0 of FIG. 1, the main control system 1 0 is the wafer stage through the planar motor based on the measured value to control the speed and position of the WS T. Further, at the time of measurement, such as incident energy of the exposure light, a laser beam for measuring their positions is irradiated onto the movement mirror of the measurement stage 14.

Figure 4 is a wafer stage WS T of time of measurement, such as incident energy of the exposure light, shows an example of the arrangement of 及 beauty measurement stage 1 4, exposing the Wehasu stage WS T as shown in FIG. 4 region 1 and is retracted to a position away from the 2, the exposure regions 1 2 moves measurement stage 1 4 as according to the on stage 1 4 measuring meter, the laser interferometer 1 5 Y, 1 5 X 1, 1 5 X the laser beam from the 2 becomes to be irradiated onto the movement mirror side of the measurement stage 1 4 out from the side of the wafer stage WS T. At this time, based on the laser interferometer 1 5 Upsilon and 1 5 X 1, 1 5 X 2 from the resulting total measurement ^ S to the position of the main control system 1 0 is the measurement stage 1 4 through the planar motor controlled with high precision. Since the wafer stage WS is also depending on driving the plane motor in an open loop T, and the position of the measurement stage 1 4 can control roughly system, in the state in which the laser beam is not irradiated, the main control system 1 0 driven by Punrupu method - O with planar motor © Ehasuteji WST, and the position of the measurement stage 1 4. However, in addition to the laser interferometer 1 5 Y, 1 5 X 1, 1 5 X 2, may be provided a linear encoder or the like for detecting the wafer stage WS T, and the position of the measurement stage 1 4 at a predetermined accuracy in a state where, single Zabimu is not irradiated, it may be performed position measurement using these linear encoder or the like.

Returning to FIG. 1, although not shown, the side surface of the projection optical system PL, and by projecting the Suritsu an imaging a plurality of measurement points on the front face of the wafer W obliquely, it is re-imaged by the reflected light oblique incidence type focal position detection system for detecting the focus position of the corresponding measurement points from lateral deviation of slit IMAGING (AF sensor) is disposed. Based on the detection result of the focus position detection system, the surface of the wafer W during scanning exposure is focused on the projection optical system P Shino image plane. In the third drawing is omitted, on the measurement stage 1 4 also reference member having a reference surface for the focus position detecting system is mounted.

It will now be described the operation of the projection exposure apparatus of this embodiment. First, to measure the amount of incident light of the exposure light IL with respect to the projection optical system PL using the measurement stage 1 4 of the wafer stage - side. In this case, in order to measure the amount of incident light in a state where the reticle R is loaded, in Figure 1, the reticle R for exposure on the reticle stage RST is loaded, the reticle R is on the illumination area of ​​the exposure light IL to move to. Thereafter, as shown in FIG. 4, the wafer stage WS T is waiting avoided in the on platen 1 3 example the + Y direction, the measurement stage 14 is moved toward the exposure area 1 2 by the projection optical system PL . Thereafter, measurement stage light-receiving surface of the radiation amount monitor 1 8 on 14 stops measurement stage 1 4 in a position to cover the exposure area 1 2, the exposure light IL through the irradiation monitor 1 8 in this state the amount of light is measured.

The main control system 1 0, supplies the measured amount of light to the imaging characteristic calculation system 1 1. In this case, for example, measured values ​​obtained by detecting the light beam obtained by branching from the exposure light IL in the illumination system 1 also supplied to the imaging characteristic calculation system 1 1, the imaging characteristic calculation system 1 1 , based on two measurement values, indirectly calculates and stores the coefficient for calculating the amount of light entering the projection optical science system PL from the monitored light intensity in the illumination system 1. During this time, the wafer stage WS T wafer W is loaded. Thereafter, as shown in FIG. 3, measurement stage 1 4 is retracted to a position away from the exposure area 1 2, the optical axis AX (the exposed areas of the center projection optical system PL of the wafer W on the wafer stage WS T so as to be positioned 1 second center) around, movement of the wafer stage WS T is performed. When the wafer stage WS T is being retracted, as shown in FIG. 4, since the laser beam from the record one The interferometer 1 5 Y, 1 5 X 1, 1 5 X 2 is not irradiated, for example, a planar motor position control by driving in an open-loop method is performed.

Time thereafter, the measurement stage 14 is retracted from the exposure area 1 2, now the laser beam from the laser interferometer 1 5 Y, 1 5 X 1, 1 5 X 2 to the wafer stage WS T is irradiated in the position of the wafer stage WS T will be controlled based on the measurement values ​​of these laser interference interferometer - then, using a reticle § Lai instrument microscope (not shown) above the reticle R, on the reticle R and a predetermined Arai Men at sign, the amount of positional deviation with a predetermined reference mark on the reference mark member 1 7 of FIG. 3 to a predetermined target value, by driving the reticle stage RST, Araimento the reticle R It is carried out. At about the same time, by detecting the position of another reference mark on the criteria mark members 1 7 § Rye placement sensor 1 6 of FIG. 1, the positional relationship against a projected image of the reticle R on the wafer stage WST (baseline amount) is detected accurately.

Then, by detecting the position of the wafer marks arranged in a predetermined shot Bok area on the wafer W (Sa Nburusho' g) through § Rye instrument sensor 1 6, the arrangement coordinates of each shot area of ​​the wafer W Desired. Thereafter, the array coordinates, and based on the known baseline amount of § Rye instrument sensor 1 6, Naga et aligns with the pattern image of shots Ryojo the reticle R to be exposed of the wafer W, the scanning exposure It is carried out.

During scanning exposure, in Figure 1, the illumination region 9 of the exposure light IL (see FIG. 2), is scanned at a speed VR in the reticle R is + Y direction via reticle stage RST (or one Y-direction) that synchronously to the speed in the wafer W gar X direction (or + X direction) via the Uwehasu Te temporary WST with respect to the exposure area 1 2; 3 - is scanned VR (beta projection magnification) . The scanning direction is reversed, due to the projection optical system PL projects an inverted image. When the exposure of one shot region is completed, the next shot area by the stepping of the wafer stage WST is moved to Hashi查 starting position, following steps. And. EXPOSURE into each shot area scan method There are sequentially performed. During this scanning exposure, it is retracted as shown in FIGS. 2 and 3, © Ehasuteji side of the measurement stage 1 4, and outside the exposure region each measurement stearyl over di 5 of the reticle stage side .

Further, during the exposure, the light intensity of the light beam branched from the exposure light IL is supplied is always measured in the imaging characteristic computation system 1 1, the imaging characteristic calculation system 1 1 is supplied, for example, in illumination systems 1 measured value of the light amount, and determined in advance to calculate the amount of the exposure light IL incident on the projection optical system PL based on the coefficients are, imaging characteristics of the projection projection optical system PL caused by the absorption of the exposure light IL (projection magnification calculates the amount of change of distortion, etc.) and supplies the calculation result to the main control system 1 0. The main control system 1 0, by driving the example predetermined lens in the projection optical system PL, corrects the imaging characteristics. The above is a general exposure, when measuring the device state maintenance or the like of the projection exposure apparatus of this embodiment performs the measurement meter by moving the measurement stage 1 4 to the exposure area 1 2. For example, when measuring the illuminance uniformity of the exposure region 1 in 2, after removal of the reticle R from the reticle stage RST, in Figure 4, X direction illuminance uniformity sensor 1 9 in the exposed area 1 2, Y directions to measure the illuminance distribution while fine movement to. In this case, provided the position of the measurement stage 1 4 If there is more accurately determined necessary, on © E C stage WST similarly to the reference mark member 1 7 reference mark member a total measuring stage 1 4 equivalent to , it may be to measure the position of the reference mark of the reference Ma Ichiku the member in § Rye placement sensor 1 6.

Next, the measurement stage 5 of the reticle stage - side, and with a total measurement stage 1 4 of the wafer stage side, will be described operation of measuring the imaging measurement of the projection optical system PL. In this case, in FIG. 2, the reticle stage RST + Y and retracted in a direction, the reference plate 6 on the measurement stage 5 is moved in the illumination region 9. This and come, the laser interferometer 7 X 1 in the non-scanning direction in the measurement stage 5, 7 Les from X 2 - Zabimu for also to be irradiated, the laser interferometer 8 Y, 7 X 1, 7 X position of the measurement stage 5 based on 2 measurements can be positioned with high accuracy.

At this time, as already described, the wafer stage side images of a plurality of index mark I Micromax is projected through the projection optical system PL - In this state, in FIG. 4, the measurement stage 1 4 drive to the image in the X direction of the index mark IM slit on the measuring plate 2 0, is scanned in the Y direction, processes the detected signal of the photoelectric sensor of the bottom of the measuring plate 2 0 in an imaging characteristic computation system 1 1 by the position of their images, and contrast obtained. Further, while changing the focus position of the measurement plate 2 0 by a predetermined amount, the position of their images, and is con Trust obtained. From these measurement results, the imaging characteristic calculation system 1 obtains a varying momentum of the imaging characteristics such as best-focus position of the projection image, the field curvature, Disperse torsion (including magnification error) of the projection optical system PL . This variation is supplied to the main control system 1 0, if the change amount exceeds the allowable range, the main control system 1 0 corrects the imaging characteristics of the projection optical system PL. In the above embodiment, as shown in FIG. 3, the wafer stage WST and measurement stage 1 4 meter is that is driven by a planar motor on surface plate 1 3, respectively. However, the combination of 1-dimensional motor is also possible configuration for driving the wafer stage WST and measurement stage 1 4 two-dimensionally.

Accordingly, Next, a second embodiment for driving the wafer stage, and a measurement stage in the system combined 1D motor respectively, will be described with reference to Figure 5 and Figure 6. This example also is obtained by applying the present invention to a projection exposure equipment of step-and-scan method, with the same reference numerals corresponding to Figure 1 and Figure 3 in Figure 5 and Figure 6 to a detailed description thereof will be omitted.

FIG. 5 is a plan view showing a wafer stage side of the projection exposure apparatus of this embodiment, FIG. 6 is a front view thereof. In Figure 5 and Figure 6, disposed parallel to the two X-axis Riniagai de 3 4 A and 3 4 B along the X direction toward the upper surface of the surface plate 3 3, X-axis Riniagai de 3 4 A and 3 4 so as to connect the B, Y-direction (Hashi查 direction) have elongated Y-axis Riniagai de 3 2 is installed. Y axis Riniagai de 3 2 is driving the dynamic in the X direction along the X-axis Riniagai de 3 4 A, 3 4 B by a linear motor (not shown).

Also, to be movable in the direction Y, along the Y-axis Riniagai de 3 2, and each other physician to the wafer stage 3 1 independently and measurement stage 35 is disposed, not shown on the wafer stage 3 1 wafer holder the wafer W is held by suction through the irradiation dose monitor 1 8 on the stage 3 5 measuring meter, uneven illuminance sensor 1 9, and measuring plate 2 0 is fixed, the photoelectric sensor in the bottom part of the measuring plate 2 0 It is incorporated. Not this case, the wafer stage 3 1, and the bottom surface of the measurement stage 35 is placed on the surface plate 3 3 through the air one bearing respectively, on the wafer stage 3 1, and the measurement stage 3 5 each independently It is driven in the Y direction along the Y-axis Riniagai de 3 2 via the illustrated Riniamota. That is, the wafer stage 3 1, and the measurement stage 3 5 Y axis Riniagai de 3 2, and X-axis Riniagai de 3 4 A, 3 4 2-dimensionally driven along B independently. Also in the present embodiment, the second laser interferometer 7 of the reticle stage side of Figure Y, 7 X 1, 7 X 2, laser interferometer 8 Y similar 4-axis, the wafer stage 3 1, and for measurement two-dimensional position of the stage 35 is measured and the position and the driving speed of the wafer stage 3 1, and the measurement stage 35 is controlled based on the measurement results. Other configurations are the same as in the first embodiment.

In this example, the irradiation energy of the exposure light, or when measuring the imaging characteristics of the projection optical system is retracted Wehasu Stage 3 1 at a distance to one Y-direction with respect to the exposure area by the exposure light, measurement stage 35 moves to the exposed area. On the other hand, at the time of exposure, the measurement scan Te temporarily 3 5 retreats to a position apart in the + Y direction with respect to the exposure area by the exposure light. Thereafter, the wafer stage 3 1 X-direction, by stearyl Bbingu in the Y direction, after moving the shot area subject to exposure on the wafer W to 査 start position run against exposure region, the wafer stage 3 1 Y axis Riniagai de by constant speed moves to 3 2 Te 沿Tsu in the Y direction, the scanning exposure to the shot area is performed.

According to the present embodiment as described above, Y-axis Riniagai de 3 2 measurement stage 35 along is arranged independently of the wafer stage 3 1. This configuration, in the driving of the scanning direction control accuracy of goodness Ri higher stage is required (Y-direction), with no need to drive the measurement stage 35, the wafer stage 3 1 compact, and lighter because you are, the scanning speed can be improved, and improved synchronization accuracy of time of scanning exposure. On the other hand, for the non-scanning direction (X direction) are driven simultaneously measurement stage 35, the load on the drive mechanism increases. However, since very high control accuracy as compared with the scanning direction in the non-run 査 direction is not required, the smaller the influence of the increase of its good Una load. Furthermore, since the measurement stage 35 as a heat generating source is separated from the wafer stage 3 1, reduction of such positioning accuracy of the wafer stage 3 1 is prevented.

In the present embodiment, the second Y-axis Riniagai de 3 6 movably arranged in the X direction in parallel to the Y axis linear guide 3 2 as indicated by two-dot chain line in Figure 5 and Figure 6, the measurement stage 35 in the Y-axis Riniagai de 3 2 may be arranged to be movable in the Y direction. Yotsute thereto, also improved control accuracy when driving the wafer stage 3 1 in the X direction.

In the first embodiment described above, as shown in FIG. 2, the same guide 4 A, 4 reticle stage RST along the B, and although the measurement stage 5 is arranged, the third Les, it may also be so move two-dimensionally in reticle stage RS T, and the measurement stage 5 is independently as Wehasute primary side of FIG.

Further, in the above embodiment, although the wafer stage WST, 3 1 of the wafer W is 载置 are provided each one may be provided a plurality of wafer stage on which the wafer W is placed. In this case, exposure of one wafer stage, the measurement for Araimento the other wafer stage, or a method of performing wafer exchange can also be used. Similarly, a plurality of reticle stage reticle R is mounted to the reticle stage side provided, by placing different reticles to the plurality of reticle stage, these reticles sequentially in the same shot area on the wafer exposure conditions (focus position, exposure, lighting conditions, etc.) as will now be exposed by changing the, it described with reference to FIGS. 7 and 8 per the third embodiment of the present invention. This example, which has a cooling device for cooling the measuring device provided on the wafer stage, the same reference numerals are given to portions corresponding to Figure 1 and Figure 3 in FIGS. 7 and 8 a detailed description thereof will be omitted Te.

Figure 7 shows a projection exposure apparatus of this embodiment. In FIG. 7, the wafer W is placed on the exposure area 1 2 side by the projection optical system PL, the wafer W is a wafer stage via Wehaho holder (not shown) 4 is held on 1, the wafer stage 4 1 rests so as to be driven in the X direction and the Y direction by, for example, a planar motor on a surface plate 1 3. It is not shown but which also incorporates a mechanism for controlling the focus position, and the inclination angle of the wafer W to the wafer stage 4 in 1. Furthermore, the measuring mechanism of 团 unnecessarily exposing light IL and imaging characteristics are incorporated the wafer W on the wafer stage 4 1. Figure 8 is a plan view of the wafer stage 4 1 of FIG. 7, the eighth FIG smell Te, in the vicinity of the wafer W (wafer holder), S semi mark member 1 7, the dose monitor 1 8, uneven illuminance sensor 1 9, slit preparative 2 1 X, 2 1 Y measuring plate 2 0 formed is is arranged. In the vicinity of the irradiation monitor 1 8 on the wafer stage 4 1, a recess 4 7 for installing a reference illumination meter can carry formed, by installing a standard luminometer recess 4 7 exposure light by measuring the incident energy of the IL, that looks like take matching illuminance between different projection exposure apparatus. Further, the reference member 4 6 the reference plane is made form a reference flatness such as a corner on the wafer stage 4 1 is also fixed. In this example, a cooling apparatus for cooling a heat source of these measurement mechanism is provided.

That is, as shown partially cut away in FIG. 7, the condenser lens 4 2, and the photoelectric sensor 4 3 is arranged at the bottom of Sri Tsu Miyako 2 1 Y measurement plate 2 0, although not shown the photoelectric sensor 4 3 is also connected to an amplifier or the like. Therefore, the cooling pipes 4 4 is installed so as to pass through the vicinity of the photoelectric sensor 4 3 inside the wafer stage 4 1, a cooling tube 4 4 ​​via the pipe 4 5 A with greater flexibility, external supplied coolant from the cooling device consisting of a low temperature liquid refrigerant that has passed through the pipe 4 in 5 a is returned to its cooling system via a piping 4 5 B having greater flexibility. Furthermore, the cooling pipes 4 4 irradiation monitor 1 8 of Figure 8, the vicinity of the uneven illuminance sensor 1 9, and recesses 4 7 for the reference illuminance meter, the reference mark member 1 7, the bottom of the reference member 4 6 It has also passed. In this example, since the heat energy from the heat source such as the amplifier of the measuring device is discharged through the refrigerant cold 却管 4 4, have never positioning accuracy or the like of the wafer W is deteriorated by the heat energy . Further, when the measurement of the incident energy Chancellor of the exposure light IL, even when the exposure light IL is irradiated to irradiation monitor 1 8 or uneven illuminance sensor 1 9, the irradiation energy via the refrigerant of the cooling pipes 4 4 because discharged, the positioning accuracy of the wafer W does not and child exacerbated by the irradiation energy.

Incidentally, the measuring apparatus using a refrigerant made of liquid in this example has cooled, the intensive blowing to cool if example embodiment air for air conditioning, etc. in the vicinity of their measuring device may be Gyotsu .

Further, arrangement of the pipe form and the measuring member of the cooling pipes 4 4 (reference Ma Ichiku member 1 7, irradiation monitor 1 8, the uneven illuminance sensor 1 9, measured plate 2 0, etc.), the cooling pipes 4 4 There may take a variety of forms each measuring member in a sufficiently cooled range. Further, a cooling tube 4 4 ​​plurality (or by branching the cooling pipes 4 4) may be parallel cool each measuring member.

Will now be described a fourth embodiment of the present invention with reference to Figure 9. This embodiment, which has provided a heat insulating member between the arrangement region of the wafer placement area of ​​the (first stage) and the measuring device (second stage) on the wafer stage, first in the ninth 8 the parts corresponding to FIG. will not be further described by the same reference numerals.

Figure 9 is an eighth view of the wafer stage 4 1 similarly to the surface plate in the X direction, shows a wafer stage 4 1 A is driven in the Y direction, in the FIG. 9, the upper portion of Wehasute di 4 1 A , rather than the wafer stage 4 1 a by the heat insulating plate 4 8 made of low thermal conductivity material, 1 and a a measuring device installation region 4, has been one other region and half. Liquid in the case of using a metal or ceramics such as iron as the wafer stage 4 1 A, the resin as the insulating plate 4 8, glass, 3 further as possible out the use of vacuum insulation pack, which is temperature control as a heat insulating plate 4 8 good record, as well as flow. And in both the wafer w is placed over the wafer holder (not shown) in the latter region, the reference mark member 1 7 is installed as a position reference, the former measuring apparatus installation area 4 1 A a within, the position serving as a reference mark is formed criteria Ma Ichiku member 1 7 a, irradiation monitor 1 8, the uneven illuminance sensor 1 9, reference member 4 6 having a reference plane, 及 beauty Sri Tsu: it is formed measuring plate 2 0 is arranged. Furthermore, the measuring device installation area 4 on 1 A a, the recess 4 7 for installing a reference illumination meter is formed. In this example, the measuring device of the exposure light and imaging characteristics in the measurement when the measuring device installation region 4 1 A a is used, the heat Eneru formic one generated by the amplifier or the like of these measurement devices insulation plate 4 8 since it is difficult to diffuse in the wafer W side by, positioning accuracy of the wafer W is not deteriorated. Similarly, radiation energy that is given by the exposure light during measurement advantage hardly diffuse to the wafer W side there Ru by insulating plates 4 8.

Incidentally, for example, as shown in FIG. 3, have a configuration in which the wafer stage WST and the measurement stage 1 4 are separated, and the heat insulating member conditioned air between the wafer stage WST and the measurement stage 1 4 it can be considered. Also in Rechikurusu stage side, to place the heat insulating member between the areas where the reticle is placed, a region where the measurement device is installed

Further, the embodiment described above, but the present invention is applied to a projection exposure apparatus by a step-and 'scan method, the present invention is also applicable to one-shot exposure type projection exposure apparatus (Step collar I), It can also be applied to a proximity type exposure apparatus that does not use a projection optical system. Moreover, not exposure device only, inspection apparatus using the stage for positioning the wafer or the like, or may be used to repair device. Thus, the present invention is not limited to the above-described embodiments, departing from the gist of the present invention Shinare may take a variety of configurations ranging. Industrial Applicability

According to the first, or second exposure apparatus of the present invention, the second stearyl temporary has been found provided independently with a measuring device for the first stage of the order to move the mask or substrate because there, the state of each exposure beam (exposure light), or while maintaining the function of measuring the imaging characteristics of the projection optical system, reduce the size of the stage for positioning a mask or substrate, it can be advantageously lightweight . Therefore, can improve control performance of these stages, as well as improved throughput of the exposure process, it is a measuring device and this photoelectric sensor to configure, or heat source such as an amplifier is separated from the stage for exposure Te, overlay accuracy and the like are improved. In particular, when the present invention is applied to a scanning exposure type exposure apparatus, such as a step 'and' Sukiyan system, since the result improving throughput of the scanning speed is greatly improved, the effect of the present invention is particularly large.

In these cases, the second stage, when the first stage is placed movably independently can move the first stage to quickly measurement region. The position of the exposure beam is irradiated with (exposed area), when the exposure beam is provided with a control device for moving the first stage between a position not irradiated (unexposed areas) are rapidly that during measurement It can be saved the first stage. Further, the position (exposure area) exposure beam is irradiated, when the exposure beam is provided with a control device for moving the second stage between a position not irradiated (unexposed areas) are rapidly that during exposure It can be saved to the second stage.

Furthermore, when in the position where the first stage is illuminated with exposure beam, the second stage the exposure beam such that irradiated les, and with a control device for positioning a position Kiniwa, those two stages it can be selectively used efficiently.

According to the first, or second exposure method of the present invention, since the second stage to the first stage of the order to move the mask or substrate with a measuring device has been found provided independently , the state of each exposure beam (exposure light), or the imaging characteristics of the projection optical system while maintaining the function of measuring, miniaturize the stage for positioning a mask or substrate, can be advantageously lightweight. Therefore, can improve control performance of these stages, as well as improved throughput of the exposure step, the photoelectric sensor to configure a measurement device, or Anpu like of the heat source is turned and this is separated from the stage for exposure , overlay accuracy and the like can be improved. In particular, when the present invention is applied to 查露 light type exposure method run as step 'and' scan method, since the thus improving throughput of the scanning speed is greatly improved, the effect of the present invention is particularly large.

In these cases, the second stage, when the first stage is placed movably independently can move the first stage to quickly measurement region. The position of the exposure beam is irradiated with (exposed region), when moving the first stage between a position where the exposure beam is not irradiated (unexposed region), the measurement at quickly its first stage It can be saved.

Further, the position (exposure area) exposure beam is irradiated, when the exposure beam to move the second stage between a position not irradiated (unexposed region), the exposure at quickly its second stage It can be saved.

Furthermore, when in the position where the first stage is illuminated with exposure beam, when the second stage is the exposure beam is positioned at a position which is not irradiated, it is possible to selectively use these two stages efficiently.

Then, third, or fourth exposure apparatus of the present invention, or, according to the third or fourth exposure method, because the cooling device is provided for cooling the measuring unit, the exposure beam state, or the imaging characteristics of the projection optical system can reduce the adverse effects of temperature rise at the time of measurement, the advantage of improving the positioning accuracy and overlay accuracy.

The fifth, or sixth exposure apparatus of the present invention, or, according to the fifth or sixth exposure method, because the heat insulating member is provided to the question of the two stages, dew light beam state or the imaging characteristics of the projection optical system can reduce the adverse effects of temperature rise at the time of measurement, the advantage of improving the positioning accuracy and overlay accuracy.

Further, when the insulating member is a low solids material having a thermal conductivity, while capable of driving the two stages as an integral, when the insulating member is a temperature regulated gas, the size of the first stage effect can also be obtained.

Claims

The scope of the claims
1. In the exposure apparatus for transferring a substrate using the exposure beam pattern formed on the mask,
A first stage for moving the predetermined region holding the one of the substrate and the mask,
A second stage that is independent of the said first stage,
Exposure apparatus comprising: the measuring equipment for measuring a state of the exposure-bi one beam attached to the second stage, the.
2. The exposure apparatus according to claim 1, wherein,
The second stage, the exposure apparatus characterized by being freely arranged moving independently from the first stage.
3. An exposure apparatus according to claim 1,
Exposure, wherein the exposure beam and the position of the exposure beam is irradiated with a control device for moving the first stage between a position not irradiated
4. An exposure apparatus according to claim 2,
Exposure apparatus characterized by comprising a control device for moving the exposure beam such that irradiated the exposure bicycloalkyl one beam and the position to be irradiated les, the second stage with the position.
5. An exposure apparatus according to claim 1,
Wherein when the first stage is in the position to be irradiated with said exposure beam, an exposure apparatus of the second stage is the exposure beam, characterized in that it comprises a control device for positioning at positions not irradiated.
6. In the exposure apparatus for projecting onto a substrate through a pattern formed on the mask projection optical system,
A first stage for moving the predetermined region holding the one of the substrate and the mask,
A second stage that is independent of the said first stage,
Exposure apparatus characterized by comprising a, a measuring device is arranged on the second stage to measure the imaging characteristic of the projection optical system.
7. An exposure apparatus according to claim 6,
The second stage, the exposure apparatus characterized by being freely arranged moving independently from the first stage.
8. An exposure apparatus according to claim 6,
In the first stage holds the substrate,
Characterized by comprising a position of the exposure area by the projection optical system, a control device for moving the first stage between a predetermined position outside the said exposure region
9. An exposure apparatus according to claim 6,
Characterized by comprising a position of the exposure area by the projection optical system, a control device for moving the second stage between a predetermined position outside the said exposure region
In EXPOSURE APPARATUS be transferred onto a substrate using a 1 0. Exposure beam pattern formed on the mask,
Exposure apparatus characterized by comprising a stage in which the measuring device is arranged to measure the state of the exposure beam, and a cooling device for cooling the measuring unit provided in the stage.
1 1. In EXPOSURE apparatus for projecting onto a substrate through a pattern formed on the mask projection optical system, measuring device for measuring the imaging characteristic of the projection optical system is arranged stearate
Exposure apparatus characterized by having a cooling device for cooling the measuring unit provided in the stage.
In EXPOSURE APPARATUS be transferred onto a substrate using a 1 2. Exposure beam pattern formed on the mask,
A first stage for moving the predetermined region holding the one of the substrate and the mask,
Blocking a second stage in which the exposure beam state measuring measuring device is mounted, is disposed question of the first stage and the second stage, the heat conducted from the second stages exposure, characterized in that it comprises a heat insulating member, the to
1 3. The exposure apparatus according to claim 1 wherein,
The heat insulating member is less solid material having a thermal conductivity exposure apparatus characterized by, or the temperature adjusted gas.
In EXPOSURE apparatus for projecting onto a substrate through a 1 4. The pattern formed on the mask projection optical system,
A first stage for moving the predetermined region while holding the substrate,
A second stage in which the measuring device is mounted to measure the imaging characteristic of the projection optical system,
Disposed between the second stage and the first stage, the exposure, characterized by comprising, a heat insulating member for blocking the heat conducted from the second stages
1 5. An exposure apparatus according to claim 1 4, wherein,
The heat insulating member is less solid material having a thermal conductivity exposure apparatus characterized by, or the temperature adjusted gas.
In 1 6. EXPOSURE method of transferring onto a substrate a pattern formed on a mask using an exposure beam,
A step first stage, to move the predetermined region holding one of said and said mask substrate,
Exposure method characterized by comprising the steps of: measuring a state of being attached to a second stage that is independent measuring device forces said exposure beam from said first stage.
1 7. An exposure method according to claim 1 6, wherein,
The second stage, an exposure method, characterized by being freely arranged moving independently from the first stage Ru used in the Utsuri励 step used in the measurement step.
1 8. An exposure method according to claim 1 6, wherein,
The moving step, the exposure beam such that irradiated position and the exposure beam irradiated les, EXPOSURE METHOD, characterized in that the first stage in question and the position is moved.
1 9. An exposure method according to claim 1 7, wherein,
The second stage, an exposure method characterized in that position and the exposure beam, wherein the exposure beam is irradiated further comprises a step of moving in Question a position not irradiated.
2 0. An exposure method according to claim 1 6, wherein,
Wherein when the first stage is in the position to be irradiated with the exposure beam, the second stage of the exposure beam such that irradiated les exposure method characterized by further comprising the step of positioning the position.
2 1. In EXPOSURE method for projecting a pattern formed on a mask onto a substrate via a projection optical system, the first stage, a predetermined region holding the one of said mask and said substrate and the step of moving,
The first is disposed on the second stage that is independent measurement device and stage, an exposure method, which comprises a Sutetsubu to measure the imaging characteristic of the projection optical system.
2 2. An exposure method according to claim 2 1, wherein,
The second stage, an exposure method, characterized by being freely arranged moving independently from the first stage Ru used in the moving step to be used in the measurement step.
2 3. An exposure method according to claim 2 1, wherein,
In the first stage holds the substrate,
The moving step, an exposure method, wherein the stage of the Γ is moved between the predetermined positions of the outer position and the exposure area of ​​the exposure region by the projection optical system.
2 4. Shall apply in claim 2 1, wherein the exposure method,
The second stage, the exposure how to further comprising the step of moving between a predetermined position of the outer position and the exposure area in the exposure area by the projection optical system.
In 2 5. EXPOSURE method of transferring onto a substrate a pattern formed on a mask using an exposure beam,
And Sutetsu flops arranged in a stage measuring device, which measures a state of the exposure beam,
Exposure method cooling apparatus provided in the stage, which comprises a step of cooling the measuring device.
In 2 6. EXPOSURE method of projecting onto the substrate a pattern formed on a mask via a projection optical system,
A scan Tetsupu disposed on the stage measuring device, which measures the imaging properties of the projection optical system,
Exposure method cooling apparatus provided in the stage, which comprises the step of cooling the measuring device.
In 2 7. EXPOSURE method of transferring onto a substrate a pattern formed on a mask using an exposure beam,
A step first stage, to move the predetermined region holding one of said and said mask substrate,
A step attached to the second stage measuring device, which measures a state of the exposure beam,
Wherein the first stage Ri by the heat insulating member disposed on the question of the second stage, an exposure method according to feature in that it comprises a step of interrupting the heat conducted from the second stage.
2 8. A claim 2 7 wherein the exposure method,
The heat insulating member is less solid material having a thermal conductivity, or the exposure method which is a gas whose temperature is adjusted to be used in the heat shield step.
In 2 9. EXPOSURE method of projecting onto the substrate a pattern formed on a mask via a projection optical system,
A step first stage, and moving the predetermined area while holding the substrate, is mounted on the measuring device to the second stage, to measure the imaging characteristic of the projection optical system,
Wherein the first stage Ri by the heat insulating member disposed between the second stage, an exposure method according to feature in that it comprises a step of interrupting the heat conducted from the second stage.
3 0. A claim 2 9, wherein the exposure method,
The heat insulating member is less solid material having a thermal conductivity, or the exposure method which is a gas whose temperature is adjusted to be used in the heat shield step
PCT/JP1998/004843 1997-10-31 1998-10-26 Aligner and exposure method WO1999023692A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP29977597A JP4210871B2 (en) 1997-10-31 1997-10-31 Exposure apparatus
JP9/299775 1997-10-31

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Publication Number Publication Date
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WO (1) WO1999023692A1 (en)

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