WO2005093792A1 - Exposure equipment, exposure method and device manufacturing method - Google Patents

Exposure equipment, exposure method and device manufacturing method Download PDF

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Publication number
WO2005093792A1
WO2005093792A1 PCT/JP2005/005473 JP2005005473W WO2005093792A1 WO 2005093792 A1 WO2005093792 A1 WO 2005093792A1 JP 2005005473 W JP2005005473 W JP 2005005473W WO 2005093792 A1 WO2005093792 A1 WO 2005093792A1
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WO
WIPO (PCT)
Prior art keywords
measurement
exposure apparatus
exposure
plate
apparatus according
Prior art date
Application number
PCT/JP2005/005473
Other languages
French (fr)
Japanese (ja)
Inventor
Yuichi Shibazaki
Original Assignee
Nikon Corporation
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Publication date
Priority to JP2004-088282 priority Critical
Priority to JP2004088282 priority
Application filed by Nikon Corporation filed Critical Nikon Corporation
Publication of WO2005093792A1 publication Critical patent/WO2005093792A1/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/70341Immersion
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • G03F7/706Aberration measurement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70691Handling of masks or wafers
    • G03F7/707Chucks, e.g. chucking or un-chucking operations
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70691Handling of masks or wafers
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/708Construction of apparatus, e.g. environment, hygiene aspects or materials
    • G03F7/70975Assembly, maintenance, transport and storage of apparatus

Abstract

A measuring stage (MST) is provided with a plate (101) for supplying a liquid and performs measurement relating to exposure through a projection optical system (PL) and the liquid (Lq). In the measuring stage, at least a part of it, including the plate, is replaceable. Therefore, measurement relating to exposure can be constantly performed at a high accuracy and the highly accurate exposure can be maintained by replacing at least the part including the plate, before the plate surface deteriorates due to contact with the liquid. In a case where at least one edge plane of the plate is mirror-finished, at the time of replacing at least a part of a measuring part including the plate, the position of the plate can be accurately measured, for instance, by using an interferometer, through the mirror-processed plate edge plane, even when the part of the measuring part is roughly positioned after replacement.

Description

Exposure apparatus and an exposure method, and device manufacturing method

Technical field

[0001] The present invention relates to an exposure apparatus and an exposure method, and relates to a device manufacturing method, and more particularly, a semiconductor device (integrated circuit), an exposure to be used in more resources Gurafuie in fabricating electronic devices such as a liquid crystal display device apparatus and exposure method, and a device manufacturing method using the exposure apparatus.

BACKGROUND

[0002] Conventionally, a semiconductor device (integrated circuit), the more lithographic Ye for manufacturing electronic devices such as a liquid crystal display device, the image of the pattern of the mask (or reticle) through a projection optical system, a resist (photosensitive agent ) is photosensitive object such as a coated wafer or glass plate (hereinafter, step is transferred to each of the plurality of shot areas on referred to as "wafer"). reduction projection exposure apparatus and-repeat scheme (, loose Sutetsupa) and 'projection exposure apparatus of a scan type (, so-called scanning' step-and Sutetsupa (also called a scanner)) are mainly used.

[0003] In this type of projection exposure apparatus, Te Bantsu to finer patterns by higher integration I arsenide integrated circuits, now a higher resolving power (resolution) is required year by year, short-wavelength exposure light for the reduction and projection increase in the optical system aperture number (NA) (larger NA of) have progressed in gradually. To mow, shortening the wavelength of the exposure light and larger NA of the projection optical system, while improving the resolution of projection exposure apparatus, causing narrowing of the focal depth. The exposure wavelength is Kakujitsushi be further shorter Nagaka the future, this remains in the too narrow depth of focus, the focus margin during the exposure operation has occurred may be insufficient.

[0004] Accordingly, by substantially shortening the exposure wavelength and a method of increasing (broad rather) the depth of focus than in the air, so that an exposure apparatus that uses the immersion method is recently noted to have. As the liquid immersion method exposure apparatus utilizing, to perform exposure in a state filled locally between the lower surface and the wafer surface of the projection optical system with a liquid such as water or an organic solvent is known (for example, see below Patent Document 1). In the exposure apparatus described in Patent Document 1, (the n usually 1. 2-1. About 6 in the refractive index of the liquid) LZN multiple of the wavelength force in the air of the exposure light in the liquid by utilizing the fact that it becomes with improved resolution, expanded its resolution the same resolution projection optical system obtained regardless of the liquid immersion method (such projection optical system produced as is possible) the ratio Baie Te depth of focus n times to, that is, to expand substantially n times the depth of focus than in the air.

[0005] In the recent years, independently of the wafer stage (substrate stage), drivable in a two-dimensional plane, the stage of the instrument used for the measurement is provided (the measurement stage), equipped with exposure apparatus has been proposed (e.g., see Patent Document 2, 3). When employing the measurement stage, good by providing only the necessary minimum components needed during exposure of the wafer (e.g., wafer holder) is the wafer stage, since, of the wafer stage small, Keiryoi匕it can be achieved. Thus, it is possible to reduce the amount of heat generated from the compact and the motor of the drive mechanism (motor) that drives the wafer stage, it is expected that can be suppressed as much as possible the reduction in the thermal deformation and the exposure accuracy of the wafer stage .

[0006] However, in the immersion exposure apparatus described above, when employing the measurement stage, because various measurement is made as to the exposure in a state soaked with water on the measurement stearyl over di-, in contact with the liquid of the measuring stage surface of the member is deteriorated by the irradiation of the contact and exposure light with a liquid, the measurement accuracy of various measurements is degraded over time about the exposure, there is a high probability that it becomes difficult to maintain for a long time and thus the exposure accuracy . Of course, the force the water repellent coating on the upper surface to be subjected to a water repellent coating of each instrument part of the measurement stage is generally the exposure light that is used in immersion exposure (far ultraviolet region or the vacuum ultraviolet region Ru has a ヽ U properties when deterioration by irradiation of exposure light of weak Guso to light).

[0007] In addition, without employing a measurement stage, even shall apply in the case of providing the various instruments in the wafer stage, the surface of the member in contact with the liquid (it is often subjected to water-repellent coating on the surface of the member) degraded by irradiation of the contact and exposure light with a liquid, the measurement accuracy of various measurements related to exposure phenomenon that degrades over time, can occur in the same manner as described above.

[0008] Patent Document 1: International Publication No. 99Z49504 pamphlet

Patent Document 2: JP-A 11-135400 JP

Patent Document 3: disclosed in JP-A 3 211 812 JP invention

Means for Solving the Problems

[0009] The present invention has been made under the above circumstances, the first aspect force Then, an exposure apparatus that exposes a substrate via a projection optical science system, by placing the substrate a movable base plate stage; liquid has a plate supplied, and via the projection optical system and the liquid performs measurement related to the exposure and measuring unit; equipped with, constituting the measuring unit the pre it is a first exposure apparatus according to claim at least a part is configured to be interchangeable including chromatography and.

[0010] According to this, has a plate which liquid is supplied, among the measurement unit for performing measurement for the previous SL exposure via the projection optical system and the liquid, is at least partially replaceable comprises a plate there. Therefore, before the plate surface is deteriorated by contact with the liquid, by replacing at least a portion including the plate can be carried out always accurate measurements in relation to the exposure, to maintain exposure with high precision and thus it becomes possible.

[0011] The present invention is the second aspect force Then, an exposure apparatus that exposes a substrate via a projection optical system, and the possible substrate stage movement by placing the substrate; at least one end face is a mirror surface has a machined plate, said projection wherein the row intends measuring unit measuring an exposure through an optical system; comprising a part including at least the plate that constitutes the measurement portion is configured to be replaced a second exposure apparatus, characterized in that there.

[0012] According to this, since at least a part including the plate that constitutes the measurement section is a replaceable, before the plate surface is degraded due to the irradiation of the exposure light at the time of measurement, the plate by replacing at least a portion comprising a can be performed always accurate measurements in relation to the exposure, it is possible to maintain exposure with high precision and thus. Further, Plate, since the at least one end face is mirror-mosquito 卩E, when replacing at least part of the total measuring section comprising a plate with a new one, the part after the replacement rough be determined position via the mirror-finished end faces of the plate, the position of the pre-chromatography bets can be accurately measured by using, for example, an interferometer or the like. Therefore, even if the positioning part of the measuring part in the rough during the exchange, because the measuring unit during the measurement can be accurately positioned at a desired position becomes possible, it is necessary to apply a long time exchange possible to effectively prevent a decrease in by that unit operating efficiency increase in the downtime associated with Nag exchange becomes possible.

[0013] Then a third aspect force of the present invention, there is provided an exposure apparatus which exposes a substrate via a projection optical system, a movable substrate stage by placing the substrate; having interchangeable plates the a measuring unit via the projection optical system performs measurement related to the exposure; a third exposure apparatus characterized by comprising; a detector for detecting time to replace the plates.

[0014] According to this, the timing advance experiment determined Me like immediately before the measurement accuracy of the measuring unit starts to decrease, is preset as a time to replace the plates detected by the detecting device of this period, detection device There with that replacement of the plate when it detects the replacement time, it can measure the accuracy of the measuring unit to exchange plates to the previous best time than decreased that Do. That is, it is possible to maintain the measurement accuracy of the measurement in relation to the exposure by the measuring unit with high precision, it can be suppressed as much as possible the frequency of replacement of the plate. Thus, over the exposure accuracy in the long term it is possible to maintain high precision, it is possible to prevent a decrease in device operation efficiency due to an increase in downtime due to replacement of the plates effectively.

[0015] The present invention is the fourth aspect force Then, there is provided an exposure method for exposing a substrate, of the measurement section performs measurement related to the exposure via a plate which liquid is supplied, at least a containing the plate is a including the first exposure method; parts process and exchanging; step and said measurement in relation to the exposure to reflect the row ,, the measurement result of exposing the substrate with the measuring unit after the replacement.

[0016] According to this, for example, before the plate surface is deteriorated by contact with the liquid, among the measurement unit for performing measurements related to the exposure via a plate which liquid is supplied, said plate including at least a portion by exchanging, it is possible to perform measurement in relation to the exposure by the measuring unit with high precision, by reflecting the result of the measurement, it is possible to highly accurate exposure.

[0017] The present invention is, in view power of the fifth result, there is provided an exposure method for exposing a substrate, of the measurement section performs measurement related to the exposure via a plate that at least one end face is mirror-finished, said plate a step of exchanging at least a portion including; to reflect the measurement results; the position of the pre-over preparative after the exchange is measured via the edge surface, the measuring unit and the process performing the measurement with a step of exposing said substrate; Ru second exposure method der including. [0018] According to this, for example, before the plate surface is deteriorated due irradiation of the exposure light during measurement, replace at least a portion including the plate, the position of the plate is measured via the edge surface the measurement unit that performs measurement related to exposure using a Te, it is possible to perform measurement in relation to the exposure with high precision, when replacing at least part of the measurement section including the plate with a new one, after the replacement even if the positioning of the components to rough, the position of the plate through a mirror-finished end faces of the plate can be accurately measured. Therefore, even if the positioning part of the measuring part in the rough during the exchange, the measuring portion can be accurately positioned at a desired position during the measurement. In addition, by reflecting the measurement result, it is possible to highly accurate exposure.

[0019] The present invention is, in view force sixth result, there is provided an exposure method for exposing a substrate, process and performs the measurement using the measuring unit and via the plates to measure regarding the exposure; the pre-chromatography a third exposure method comprising; detecting the replacement timing of bets, a step of replacing the plate; and exposing the substrate to reflect the measurement results.

[0020] According to this, the timing advance experiment determined Me like immediately before the measurement accuracy of the measuring unit starts to decrease, previously set this time as an exchange timing of the plate. Then, by the exchange of the plate when it detects the replacement time, the measurement accuracy of the measuring unit it is possible to replace the plate to a previous best time than decreases. That is, it is possible to maintain the measurement accuracy of the measurement in relation to the exposure by the measuring unit with high precision, it can be suppressed as much as possible the frequency of replacement of the plate. In addition, by reflecting the measurement result, it is possible to highly accurate exposure.

[0021] Further, in the extent lithographic Ye, by forming the first one third of the device pattern on the substrate by exposure light to a substrate using the exposure apparatus of the present invention, high integration Maikurode vice production it is possible to improve the resistance. Accordingly, the present invention further result from another point of view, it can be said also as the first one third device manufacturing method using any of the exposure apparatus of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

[0022] FIG. 1 is a schematic diagram showing an exposure apparatus according to a first embodiment.

Is a perspective view showing the FIG. 2 stage system. [FIG 3 (A)] is a perspective view showing a measurement stage.

[FIG 3 (B)] measurement stage force is also a perspective view showing a state in which measurement table has been removed.

It is a longitudinal sectional view of FIG. 4 measurement stage.

It is a longitudinal sectional view of FIG. 5 self-weight canceller.

6 is a schematic diagram for explaining the operation of the self-weight canceller.

7 is a block diagram showing the main configuration of a control system of the exposure apparatus of the first embodiment.

Is [FIG 8 (A)] a plan view used to explain a parallel processing operation of the first embodiment (part 1).

Is [FIG 8 (B)] a plan view used to explain a parallel processing operation of the first embodiment (Part 2).

Is [FIG 9 (A)] a plan view used to explain a parallel processing operation of the first embodiment (Part 3).

Is [FIG 9 (B)] a plan view used to explain a parallel processing operation of the first embodiment (part 4).

Is [10] a plan view used to explain a parallel processing operation of the first embodiment (Part 3).

11 is a perspective view showing a measurement stage, and loading and unloading mechanism according to the second embodiment.

[12] measurement stage force is also a perspective view showing a state where the plate is unloaded.

BEST MODE FOR CARRYING OUT THE INVENTION

[0023] "First Embodiment"

Hereinafter, a first embodiment of the present invention will be described with reference to FIG. 1 one 10.

[0024] Figure 1 is a schematic arrangement of an exposure apparatus 100 of the first embodiment. The exposure equipment 100 'projection exposure apparatus of a scan type, i.e. so-called Sukiya Jung' step and a Sutetsupa (also called a scanner). The exposure apparatus 100 includes an illumination system 10, a reticle stage RST that holds a reticle R as a mask, a projection unit PU, a stage that have a measurement stage MST that constitutes the wafer stage WST and the measurement unit as the substrate stearyl over di 50, and a control system of these parts. On the wafer stage WST, so wafer W as a substrate is placed! /, Ru.

[0025] The illumination system 10, with a substantially uniform illuminance by the illumination light (exposure light) IL with a slit-shaped illumination area on the reticle R which is defined by the reticle blind (not shown). In this case, as illumination light IL, ArF excimer laser beam (wavelength 193 nm) is used as an example.

[0026] on the reticle stage RST, such as a circuit pattern whose pattern surface reticle R formed (Contact Keru lower surface in FIG. 1) is fixed, for example, by vacuum suction. Rechiku Le stage RST, for example, by a reticle stage drive section 11 including a linear motor or the like (see FIG. 7 not shown in FIG. 1), matches the optical axis of the illumination system 10 (the optical axis AX of the projection optical system PL that will be described later as well as a possible finely driven in vertical XY plane), and can at a predetermined scanning direction (scan rate specified in the Y-axis direction) is the lateral direction of the page surface in FIG. 1, where .

[0027] position of the stage moving plane of the reticle stage RST (including rotation around the Z-axis) is Chitarureza interferometer (hereinafter, "reticle interferometer") 116, movable mirror 15 (actually, Y via the X moving mirror having a Y movable mirror and reflection surface orthogonal to the X-axis direction having a reflection surface orthogonal to the axial direction is provided), for example, it is always detected at a resolution of about 0. 5-lnm that. The measurement values ​​of reticle interferometer 116, main controller 20 (not shown in FIG. 1, see FIG. 7) is sent to, the main controller 20, the reticle stage RST based on the measurement values ​​of reticle interferometer 116 X-axis direction, calculates the position of the Y-axis direction and 0 z-direction (Z-axis in the direction of rotation), by controlling the reticle stage drive section 11 based on the calculated result, the position of the reticle stage RST (and to control the speed).

[0028] Above the reticle R, a pair of fiducial marks on measurement stage MST that correspond to these and Rechikuruara I instrument marks the pair on the reticle R through the projection optical system PL (hereinafter, "first reference mark" and called) TTR of the using light of exposure wavelength to observe simultaneously (Through the reticle) Araimento system force is also composed of a pair reticle § Rye instrument detection system RAa, RAb is provided a predetermined distance in the X-axis direction, that. These reticles § Rye instrument detection system RAa, as the RAb, for example those described in JP-7- one hundred seventy-six thousand four hundred sixty-eight JP and US Patent No. 5 corresponding thereto, 646, those disclosed in, 413 No. similar configuration that has been used. As long as the national laws in designated states in this international application (or elected states) allows per cent Te, hereby incorporated by the disclosures of the publications and the corresponding U.S. Pat.

[0029] The projection unit PU is disposed below in Figure 1 of the reticle stage RST. Projection unit PU includes a barrel 40, is configured to include a projection optical system PL consisting plurality of optical elements Ca ゝ et held in a predetermined positional relation inside barrel 40 Ru. As projection optical system PL, for example, a plurality of lenses (lens elements) force also made refractive optical system having a common optical axis AX in the Z-axis direction is used. The projection optical system PL has, for example, a predetermined projection magnification at both sides telecentricity trick (e.g. 1Z4 times or 1Z5 times). Therefore, when the illumination area of ​​the reticle R is illuminated by illumination light IL from illumination system 10, illumination light IL having passed through the reticle R, the illumination area via the projection optical system PL (projection unit PU) reduced image of the circuit pattern of the reticle R (a part of the reduced image of the circuit pattern) is formed on the wafer with a resist (photosensitive agent) is applied to the surface.

[0030] Furthermore, among the plurality of lenses shown constituting a force projection optical system PL is omitted, a plurality of lenses of specific, based on a command from the main controller 20, the imaging characteristic correction controller port is controlled by over la 381 (see FIG. 7), (including the imaging characteristics) the optical characteristics of the projection optical system PL, and can be adjusted for example magnification, distortion, coma, and the like curvature of field (including an image plane tilt) as the ringing! /, Ru.

[0031] In addition, in exposure apparatus 100 of the embodiment, since exposure applying the liquid immersion method is performed as described later, the opening of the reticle side along with the numerical aperture NA substantially increases increases. Therefore, in the refractive optical system constituting only a lens, it becomes difficult to satisfy the condition of the Petzval tends projection optical system becomes large. To avoid an increase in size of the force Cal projection optical system, use catadioptric system configured including a mirror and a lens (Katade I-Oputorikku system), also good.

[0032] In addition, in exposure apparatus 100 of the embodiment, in order to perform exposure applying the liquid immersion method, a lens as an optical element closest to the image plane side of the projection optical system PL (Ueno ヽ W side) (hereinafter , in the vicinity of the called "tip lens") 91, a liquid supply nozzle 51A constituting the liquid immersion device 132, and a liquid recovery nozzle 51B is provided.

[0033] to the liquid supply nozzle 51 A has one end the liquid supply apparatus 288 (not shown in FIG. 1, see FIG. 7) and the other end of the supply pipe of the connected (not shown) is connected to said liquid the recovery Roh nozzle 51B has one end liquid recovery unit 292 (not shown in FIG. 1, see FIG. 7) the other end of the recovery pipe (not shown) connected to the are connected.

[0034] The liquid supply apparatus 288 includes a tank of liquid, a compression pump, a temperature controller, and is configured to include a valve for controlling the supply 'stop of the liquid to supply pipes. The Bruno Rev, for example the supply of liquid 'not only stops, so also the adjustment of flow rate, it is preferable to use a flow control valve. The temperature controller adjusts the temperature of the liquid in the liquid tank, the temperature about the same temperature in the chamber where the exposure apparatus main body is housed (not shown).

[0035] The liquid recovery apparatus 292, the liquid in the tank and a suction pump, and is configured to include a valve for controlling the collection and stop of the liquid via recovery pipe. Roh The Rev, it is desirable to use a flow control valve in response to the valve of liquid supply unit 288 side as described above.

[0036] Examples of the liquid, here, ArF excimer laser light (wavelength 193nm light) is ultrapure water passes (hereinafter, especially when necessary except, simply referred to as "water") those using to. Ultra pure water can be obtained in large quantities at a semiconductor manufacturing plant or the like, that it has no adverse effects on the photoresist and optical lenses and the like on the wafer.

Refractive index n of the water with respect to the [0037] ArF excimer laser light is around 1.44. In the water the wavelength of illumination light IL is shorter wavelength to 193 nm X LZN = about 134 nm.

[0038] The liquid supply device 288 and the liquid recovery apparatus 292 is provided with a controller, respectively, each of the controller, that have come to be controlled by main controller 20 (see FIG. 7). Controller of the liquid supply apparatus 288, according to instructions from main controller 20, opens the valve connected to supply pipe to a predetermined degree, through the liquid supply nozzle 51 A in the space between tip lens 91 and wafer W supplying water. At this time, the controller of liquid recovery unit 292, according to instructions from main controller 20, opens the valve connected to recovery pipe at a predetermined opening degree, and tip lens 91 via the liquid recovery nozzle 51B wafer between force and W also collect water in the interior of the liquid recovered device 292 (liquid tank). At this time, the main controller 20 always a quantity of water supplied liquid supply nozzle 51 A force between the previous end lens 91 and the wafer W, the amount of water recovered via liquid recovery nozzle 51B is to be equal, giving the liquid supply device 2 88 controller, the controller of liquid recovery unit 292 a command. Therefore, in the space between tip lens 91 and the wafer W, a constant amount of water Lq (refer to FIG. 1) it is held. In this case, water Lq held in the space between tip lens 91 and wafer W is constantly swapped One.

[0039] As apparent from the above description, the immersion device 132 of this embodiment, the liquid supply equipment 288, the liquid recovery apparatus 292, the supply pipe, the recovery pipe, liquid supply nozzle 51 A and the liquid recovery Bruno nozzle It contains 5 IB or the like is configured, a local liquid immersion device.

[0040] In the case where measurement stage MST is located below projection unit PU also, it is possible to meet the water between the same manner as described above the measurement table MTB and tip lens 91.

[0041] In the above description, the explanation for simplicity, and not limited to a force thereto to a liquid supply nozzle and the liquid recovery Bruno nozzle is assumed to be provided one each, for example, WO as disclosed in 99Z49504 pamphlet, it is also possible to adopt a configuration having multiple nozzles. In short, if it is possible to supply liquid between the optical member (tip lenses) 91 and the wafer W of the lowermost of constituting the projection optical system PL, may be made if the configuration Yes .

[0042] Incidentally, although not shown, outside the liquid immersion area where water Lq is held, for example, the liquid supply Roh nozzle 51A, the outside of the liquid recovery nozzle 5 IB, for example, leakage sensor of the optical fiber type is installed cage, main controller 20 is configured capable of detecting leakage occurrence based on the output of the leak sensor instantly, Ru.

[0043] The stage device 50 includes a frame caster FC, a provided et the base board 12 on the frame caster FC, wafer stage WST and measurement stage MST arranged above the upper surface of the base board 12, these stages WST, the interferometer system 118 as a position measuring apparatus including the interferometer 16, 18 for measuring the position of the MST (see Fig. 7), the stage WS T, stage drive unit 124 for driving the MST (see FIG. 7 ), and it is equipped with a.

[0044] the frame caster FC from 2 to component force so that showing a stage device 50 in a perspective view, upward to the Y-axis direction in the vicinity of the end portion of the X-side direction on one side and the other side in the longitudinal direction projecting protrusions FCa, consisting FCb guard body-formed schematic tabular member.

[0045] The base plate 12 is also made plate member countries, also called surface plate, front Kitotsu portion FCa of frame caster FC, are disposed sandwiched by the regions FCb. The upper surface of the base board 12 flatness is finished very high, there is a guide surface during the movement of the wafer stage WST and measurement stage MST.

[0046] The wafer stage WST, as shown in FIG. 2, through the © Ehasuteji body 28 disposed on the base plate 12, the Zeta · tilt drive mechanism (not shown) on the wafer stage main body 28 mounted and a wafer table WTB that it is. Zeta · tilt drive mechanism, in reality is composed 3 Tsunoa Kuchiyueta (e.g., a voice coil motor or electromagnet) include such supporting at three points of the wafer table WTB on the wafer stage main body 28, the wafer table WTB the Z-axis direction, 0 x direction (X-axis rotation direction), finely drives the directions of three degrees of freedom 0 y-direction (Y-axis in the direction of rotation).

[0047] The wafer stage main body 28 is configured Te cowpea hollow member extending in the X-axis direction in the cross section rectangular frame. The lower surface of the wafer stage main body 28, several more, for example receiving four gas hydrostatic not Figure shows, for example, an air bearing is provided, the wafer stage WST through these air bearing above the aforementioned guide surface It is floatingly supported in a non-contact manner via a clearance of around mu m, Ru.

[0048] above the convex portion FCa of the frame caster FC, as shown in FIG. 2, the stator 86 for the Y axis extending in the Y-axis direction is disposed. Similarly, above the convex portion FCb of the frame caster FC, a stator 87 for Y-axis extending in the Y-axis direction is disposed. The stator 86 for these Y-axis, 87, respectively (not shown) of gas hydrostatic bearing provided on the lower surface, for example convex portion FCa by an air bearing, air bearing support via a predetermined clearance with respect to the upper surface of the FCb It is. The stator 86 for the Y axis, 87, in this embodiment, is constituted by the magnetic pole unit comprising a plurality of permanent magnet groups force, Ru.

[0049] In the interior of the wafer stage main body 28, and the magnetic pole units 90 having a permanent magnet group as the X-axis direction of the movable element is provided! /, Ru.

[0050] The internal space of the magnetic pole unit 90, a stator 80 for the X axis extending in the X-axis direction is 揷入. The stator 80 for the X-axis is constituted by an armature unit that incorporates a plurality of armature coils arranged at predetermined intervals along the X-axis direction. In this case, the stator 80 for X-axis comprising a pole Interview knit 90 and the armature unit, configured is a moving magnet type X-axis linear motor that drives the wafer stage WS T in the X-axis direction, Ru. In the following, as appropriate, the X-axis linear motor, using the same reference numerals as the stator (stator for X-axis) 80, is referred to as X-axis linear motor 80. Instead of moving mug net type linear motor may be used moving coil type linear motor.

[0051] wherein the end portion of one side and the other side in the longitudinal direction of the stator 80 for the X-axis, for example, an armature unit that incorporates a plurality of armature coils arranged at a predetermined distance along the Y-axis direction forming Ru mover 82, and 83 force each fixed from. Each of these movable elements 82, 83 are inserted inside mosquito ゝ et respective stators 86, 87 for the Y-axis described above. That is, in this embodiment, the stator 86, 87 for the Y axis composed of the mover 82, 83 and the magnetic pole unit consisting of the armature unit, moving coil type Y-axis linear motor is configured. In the following, each of the two Y axis linear motors, with each of the movable element 82, 83 the same reference numerals and, as appropriate, shall be referred to as Y-axis linear motor 82, Y-axis linear motor 83. As Y-axis linear motors 82, 83, it may be used re Niamota of moving magnet type.

[0052] That is, the wafer stage WST by X-axis linear motor 80, while being driven in the X-axis direction, are driven in the Y-axis direction integrally with X-axis linear motor 80 by the pair of Y-axis linear motors 82, 83 that. Further, the wafer stage WST, by varying slightly the Y-axis direction of the driving force Y-axis linear motors 82, 83 is generated, is also rotated in the theta z-direction.

[0053] on the wafer table WTB is wafer holder 70 is provided for holding the wafer W. Wafer holder 70 includes a plate-like body portion and a body portion fixed to an upper surface of the auxiliary plate about 2mm in diameter than the diameter of the wafer W is large circular opening formed in its center. The area of ​​the circular opening inside the main body portion of the auxiliary plate, a large number of pins are disposed, it is vacuum suction in a state where the wafer W is supported by the large number of pins. In this case, in the state in which the wafer W is vacuum-adsorbed, the height of its surface of the wafer W and the surface of the auxiliary plate is summer to be substantially the same height.

[0054] Further, on the upper surface of wafer table WTB, as shown in FIG. 2, X movable mirror 17X is Y-axis direction having a reflection surface orthogonal to the X axis in the X-axis direction end (one X side end) to extend, the Y-axis direction end (+ Y side end) Y movable mirror 17Y that has a reflection surface orthogonal to 〖this Y-axis is arranged extending in the X-axis direction. These movable mirrors 17X, the respective reflection surfaces of 17Y, as shown in FIG. 2, the interference from the interferometer system 118 X-axis interferometer 46, Y-axis interferometer 18 constituting the (see FIG. 7) described later total beam (measurement beam) is projected, respectively, and by receiving the reflected light of each interferometer 46, 18 Dewaso respectively, and side surface of projection unit PU to the reference position (in general of each reflective surface, Ofakushisu 'Araimento system ALG sides arranged fixed mirror one (FIG. 7, FIG. 8 (a) refer to the like), it measures the measurement direction of displacement therefrom a reference plane). Y-axis interferometer 18 has a projection center (optical axis AX) and Araimento based long axis measurement parallel to the forming department Y axis detection center of the ALG of the projection optical system PL, X-axis interferometer 46, and a measurement axis intersects perpendicularly with the projection center of the Y axis interferometer 18 long axis and projecting projection optical system PL measurement (see such as Fig. 8 (a)).

[0055] The Y-axis interferometer 18 is a multiaxial interferometer having at least three optical axes, the output values ​​of each optical axis can be measured independently, Ru. The output value of the Y axis interferometer 18 (the measurement value), as shown in FIG. 7, are supplied to main controller 20, based on the output value from the main controller 20 in the Y-axis interferometer 18, the wafer not a Minara the Y-axis direction position of the table WTB (Y position), and summer as can be measured even if the rotation amount around the X-axis (pitching amount) and the Z axis of the rotation amount (Yoingu amount). Further, X-axis interferometer 46 is a multiaxial interferometer having at least two optical axes, the output values ​​of each optical axis summer so can be measured independently. The output value of the X-axis interferometer 46 (the measurement value) is supplied to main controller 20, the main controller 20, based on an output value from the X axis interferometer 46, the position of the X-axis direction of wafer table WTB (X position) not only, so it can also be measured the amount of rotation of the Y axis (rolling amount)! /, Ru.

[0056] As described above, on wafer table WTB, in fact, moving mirror 17X, these in force diagram 1 17Y are provided is shown as a representative moving mirror 17. Incidentally, example, it may also be a reflecting surface by mirror-mosquito 卩E the end surface of wafer table WTB (the aforementioned moving mirror 17X, corresponding to the reflection surface of the 17Y),.

[0057] the measurement stage MST, as shown in FIG. 2, is constituted by combining a plurality of members, such as Y stages 81 to the X-axis direction is the longitudinal direction, closest to the lowermost surface (base board 12 and receiving a plurality of gas hydrostatic bearing provided in the lower surface of the member has), for example, the upper surface (guide surface of the base board 12 via the E § bearing) floatingly supported in a non-contact manner via a clearance of several / zm upward It has been Ru.

[0058] Measurement stage MST, the Bunryokuru so from the perspective view of FIG. 3 (A), X-axis direction of the measurement stage main body 81c and the measurement stage main body 81c the upper surface of the elongated X-axis direction length rectangular plate one side of a Y stage 81 and a respective fixed pair of projecting portions 81a, 8 lb on the other side, and the measurement stage leveling table 52 disposed above the upper surface of the body 81c, 該Rebe and a total measuring table MTB which constitutes at least a part of the measuring unit provided on the ring table 52! /, Ru. [0059] wherein the end surface of one side and the other side of the X-axis direction of the measurement stage main body 81c that constitutes the Y stage 81 incorporates a plurality of armature coils arranged at a predetermined distance along the Y-axis direction each movable element 84, 85 force is fixed consisting of the armature unit. Each of these movable elements 8 4, 85, are inserted from the inside respectively the stator 86, 87 for the Y-axis described above. That is, in this embodiment, the stator 86, 87 for the Y axis composed of the movable element 84, 85 and pole Interview knit consisting of the armature unit, type Y Zichri Yuamota two moving coil is configured . Hereinafter, the, respectively that of the two Y axis linear motors, with the same reference numerals as the respective movers 84, 85, as appropriate, as also referred to as Y-axis linear motors 8 4, Y-axis linear motors 85 to. In the present embodiment, these Y-axis linear motors 84, 85 are driven to full strength Y-axis direction of the measuring stage MST. Incidentally, the Y-axis linear motors 84, 85 may be a moving magnet type linear motor.

[0060] the bottom surface of the measurement stage main body 81c receives a plurality of gas hydrostatic bearing described above has been found provided. One side of the measurement stage main body 81c upper face of the X-axis direction, the Y-side end portion near vicinity of the other side, a pair of projecting portions 81a of the aforementioned, 81b are fixed to Tai畤 each other. These collision detection section 81a, is between 81b mutually stator 61 extending in the X-axis direction, the stator 63 is disposed at a predetermined distance in the Z axis direction (up and down), each of the stator 61, 63 both end portions are fixed respectively to the protruding portions 81a, 81b of.

[0061] to the end surface on the + X side of the leveling table 52, the movable element is provided with X voice coil motor 54a, the stator of the X voice coil motor 54a is fixed to the upper surface of measurement stage main body 81c It is. Further, in the + Y end surface of leveling table 52, Y voice coil over motor 54b, 54c of the movable member are respectively provided, the stator of these Y voice coil motors 54b, 54 c is a top of the measurement stage main body 81c It has been fixed. Wherein X voice coil motor 54a is composed of, for example, the movable element and the stator comprising an armature unit composed of the magnetic pole unit, by electromagnetic interaction between them, generating a driving force in the X-axis direction. Also, the Y voice coil motors 54b, 54c are also similarly configured to occur a driving force in the Y-axis direction. That is, leveling table 52, the Y stage 81 by X voice coil motor 54a, are driven in the X-axis direction, drive Y voice coil motors 54b, the Y stage 81 by 54c in the Y-axis direction It is. The voice coil motor 54b, by varying the driving force 54c is generated, so that it can be driven leveling ring table 52 relative to the Y stage 81 in the Z Jikukai Rino rotational direction (theta z-direction) and summer to.

[0062] The leveling table 52, as shown partially to schematically sectional view of FIG. 4, appearance bottom of that is opened is made plate-shaped casing strength, the inside, Z axis three Z voice coil motors 56 which generates a direction of the driving force (however, not shown for the Z voice coil motors 56 of depth of the page surface) are arranged 1S respectively. The stator of the Z voice coil motors 56 consists armature unit is fixed to the upper surface of measurement stage main body 81c. Further, the movable element of the Z voice coil motors 56 consists magnetic pole units are fixed leveling the ring table 5 2. These three Z voice coil motors 56, the electromagnetic interaction between each of the stator and mover generates a driving force in the Z axis direction. Thus, the leveling table 52, in together when driven in the Z-axis direction by three Z voice coil motors 56, the direction of rotation (0 X direction) of the X-axis, Y-axis rotation direction (0 y-direction) 〖this is also adapted to be fine driving.

[0063] That is, leveling table 52, X voice coil motor 54a described above, Y voice coil Irumota 54b, 54c, the three Z voice coil motors 56, 6 degrees of freedom (X, Upsilon, Z, theta chi, theta gamma, there is a small drivable without contact to 0 zeta).

[0064] Further, inside of the leveling table 52, as shown in FIG. 4, weight canceling mechanism 58 for canceling the weight of the leveling Te one table 52 is also arranged, Ru. Chi words, weight canceling mechanism 58, it can be said that to compensate for the weight of the measuring table ΜΤΒ. The weight canceling mechanism 58 is disposed in the vicinity of substantially the center of gravity of a triangle composed of three Ζ voice coil motor 56 described above.

[0065] self-weight canceller 58, as shown in the longitudinal sectional view in FIG. 5, the lower end (one Zeta end) and is opened mouth, upper end (+ Zeta end) cylindrical cylinder which is closed is and section 170A, is inserted through the opening into the interior of the cylinder portion 17 OA, and a relatively movable piston section 170B relative to the cylinder unit 170A, Ru.

[0066] The said cylinder portion 170A, a lower end portion of the (-Z side end portion) over the inner to the entire circumference of the peripheral surface in the vicinity of the annular first annular projection 172a is formed. Further, the lower side of the first annular projection 172a (-Z side) at predetermined intervals a second annular projection 172b are formed. Then, the inner bottom surface of the annular groove 172d of, predetermined depth formed between the first annular projection 172a and second annular projection 172b of the silicon Sunda portion 170A, and the inner space and the outside of the cylinder portion 170A through hole 172c that pass communicates it is formed at a plurality of locations at predetermined intervals.

[0067] The piston section 170B, the first and the outer peripheral surface thereof, a second annular projection 172a, in a state in which a predetermined clearance is formed between the 172 b, is inserted into the cylinder portion 170A.

[0068] The piston section 170B includes a cylindrical portion of a first diameter, 2 parts force comprising stages between the disc portion of the Z provided on the side cylindrical portion concentric with a second diameter (> first diameter) has a cylindrical shape attached. This piston portion 170B, vent line 174a in the Z-axis direction extending from the central portion of the upper surface to the bottom surface is formed. Vent line 174a is formed on the lower end face of the piston portion 170B (-Z side end surface) communicated with the groove 174b, the lower end face near the piston portion 170B, it is processed to be narrower as approaching the lower end face ing. That is, the lower end of the vent line 174a is formed so as to serve as a sort of nozzles (convergent nozzle). Incidentally, the groove 174b is, in fact, has a shape of a combination of a cross orthogonal circle and its center.

[0069] In the vicinity of the periphery of the upper end surface of the piston portion 170B, 4 Tsunotsu duct 176 (although at intervals of the central angle 90 °, in FIG. 5 + Y side, respectively on the -Y side; ^ stand It shows only two vent line 17 6 ​​to location, + X side, the remaining two vent line 176 respectively positioned on the -X side is not shown), the piston portion 170B height direction central portion slightly upper are formed in a state of depth was up to the position. The near the lower end of these four vent line 176 throttle hole 178 as gas outlet communicating with the outside of the outer circumferential surface of the piston portion 170B is formed through.

[0070] In this case, the above the inside of the piston portion 170B of the cylinder portion 170A, a space 180 of approximately airtight state is formed. The space 180, one end of the air supply pipe (not shown) via an opening (not shown) formed on a part of the cylinder portion 170A is connected, the other end of the supply pipe, the gas supply (not shown) They are connected devices. The from the gas supply device, for example noble gases or nitrogen, such as helium, or a gas such as air is supplied to the space 18 in the 0 through supply pipe, the space 180 is high pressure in comparison with the outside of the cylinder 170A yang there is a between the compressed air. Therefore, in the following, the space 180 shall be referred to as "positive pressure space 180 '.

[0071] In this way consists a self-weight canceller 58, as shown in FIG. 6, the flow of gas in the vent passage 174a indicated by the arrow A by the space 180 is an inter positive pressure (

1

Hereinafter also referred to as "flow A") occurs. Gas force aforementioned vent indicated by the flow A

1 1

Ejected from the convergent nozzle portion of the lower end of the conduit 174a, the gas indicated by the arrow A in the groove 174b

2

It occurs in the flow. This gas, spreads over the entire groove 174b, is ejected toward the top surface of the overall mosquito ゝ et measuring stages body 81c of the groove 174b. Thus, the static pressure of the gas between the upper surface of the bottom and a total measurement stage main 81c of the piston portion 170B (clearance internal pressure), between the bottom surface of the piston portion 170 B and the upper surface of measurement stage main body 81c, predetermined clearance AL is of the formation of the

So that the 1 is. That is, the bottom surface of the piston portion 170B, substantially one air Karadasei圧 bearing is formed, the piston portion 170B is supported by levitation in a non-contact manner above the measurement stage main body 81c. Hereinafter, the static gas bearing shall be referred to as a "thrust bearing".

[0072] Similar to the vent line 174a, gas indicated by the arrow B in each of the four vent line 176

1

Becomes the scan of flow occurs, along with this, the throttle hole 178 is directed toward the piston portion 170B inside or al outside, gas flow of gas indicated by arrow B resulting, ejected from the throttle hole 178

2

Vinegar, and thus be sprayed against the second annular projection 172 b. At this time, the gas between the second annular protrusion 172b and the piston portion 170B peripheral surface static pressure (clearance internal pressure), and the outer peripheral surface of the piston portion 1 70B, first, second annular projection 172a, 172b between the, so that the predetermined clearance delta L is formed. That is, the peripheral wall of the piston portion 170B, substantially

2

Are static gas bearing is formed between the piston portion 170B and the cylinder portion 170A is a contactless. Hereinafter, the static gas bearing shall be referred to as "radial bearing".

[0073] Further, the plurality of through holes 1 72c formed at predetermined intervals in the annular groove 172d of the cylinder portion 170A, and cause flow of gas indicated by arrow C, thereby, the second annular projection 172

1

Gas that has been sprayed in b, gas and the like in the positive pressure space 180, the gas in the clearance AL external

2

So as to be discharged into the! /, Ru.

[0074] According to the self-weight canceller 58 of the present embodiment, the leveling table 52 at its upper end when the asked to support its own weight is supported by the positive pressure of the positive pressure space 180, the Y stage 81 between the upper surface of measurement stage main body 81c that constitutes, it is possible to by the action of the thrust bearing, it is always maintained clearance AL. Further, even when a force to incline leveling the ring table 5 2 the inclination direction (0 x, 0 y-direction) is caused, by the action of the radial bearings, so when you'll keep the clearance AL, leveling inclination of the ring table 52

2

So that the swash is absorbed. Therefore, according to the self-weight canceller 58, a leveling table 5 2 while supporting low-rigidity positive pressure, that have made it possible to absorb the inclination.

[0075] Returning to FIG. 3 (A), the said measuring table MTB is provided with a configured measurement table main body 59 of a material such as Zerodur (Schott trade name), vertically arranged in the Y side of the measurement table main body 59 in fixed, and a substantially U-shaped cross section of the movable element 62, 6 4 for the X-axis direction is the longitudinal direction.

[0076] wherein the bottom surface of the measuring table body 59, a plurality, for example four air bearings 42 (see FIG. 4) is provided above the upper surface measuring table MTB is the leveling table 52 through these air bearings 42 It is floatingly supported in a non-contact manner via a clearance of about several mu m to.

[0077] The movable element 62 includes a YZ section substantially U-shaped movable piece yoke, mover yoke of the inner surface (upper bottom surface) in along the X-axis direction are arranged alternately and a predetermined interval the N pole permanent and a permanent magnet group consisting of a plurality of pairs of magnets and S GokuHisashi permanent magnet, which is the engaged state to the stator 61 described above. The inner space of the mover yoke of mover 62, an alternating magnetic field along the X-axis direction is formed. The stator 61, for example along the X-axis direction composed of an armature unit that incorporates a plurality of armature coils arranged at predetermined intervals. That is, it child stranded 〖stator 61 and movable element 62, is configured the moving magnet type X-axis linear motor LX for driving the measuring table MTB in the X-axis direction!, Ru.

[0078] The movable element 64 includes a YZ cross section U-shaped movable piece yoke, and an N-pole permanent magnets and S-pole permanent magnet provided one by one on the inner surface (upper bottom surface) of the movable element yoke is the engaged state the stator 6 3 described above. The inner space of the mover yoke of mover 64, + magnetic field Z direction or Z direction are formed. The stator 63 has on its inside is provided with a armature coils arranged in an arrangement in which the current flows only in the X-axis direction in the magnetic field formed by the N pole magnets and S Goku磁 stone. That is, the mover 64 and the stator 63, Y voice coil motors VY of moving magnet type driving the measuring tape Le MTB in the Y-axis direction is constituted.

[0079] As apparent from the above description, in this embodiment, Y-axis linear motors 82- 85 及 beauty X-axis linear motor 80, the fine movement mechanism (not shown) for driving the wafer table WTB, measurement stages on MST each motors described above (54a- 54c, 56, LX, VY) by, is construction stage drive unit 124 Ru shown in Figure 7, Ru. Various drive mechanisms that constitute the stage drive unit 124, are controlled by the main controller 20 shown in FIG.

[0080] the measuring table MTB is an instrument such for performing various measurements related to exposure comprises the further. If this further detail, the upper surface of the measuring table body 59, for example, zero port Dewar (shot trade name) or a glass material force also made plate 101 of quartz glass or the like is kicked set. This is the surface of the plate 101 over its substantially entire surface chromium is applied, the area and the measuring instruments in some places, JP 5 - 21314 discloses and US Patent No. 5 corresponding thereto, 243, 195 JP etc. a plurality of reference marks area FM which reference marks are formed as disclosed is provided. Insofar as national laws in designated states in this international application (or elected states) permit, a part of the present description by the disclosures of the publication and the corresponding U.S. Pat.

[0081] in the region of the measuring instruments, the patterning is performed, various measurement aperture pattern is formed. As such measurement aperture pattern, for example, aerial image measurement-opening Ropata over emissions (eg slit-shaped aperture pattern), uneven illumination measuring pinhole aperture pattern, irradiation of the measurement aperture pattern, and the like wavefront aberration measurement aperture pattern It is formed.

[0082] The inside measurement table main body 59 of the lower of the spatial image measurement aperture pattern, the exposure light irradiated on the plate 101 via the projection optical system PL and the water, via the aerial image measurement aperture pattern and light receiving system is provided for receiving Te, this Yotsute, projected by, for example, JP 2002- 14005 JP and the projection optical system PL This disclosed in US Patent application Publication No. 2002Z0041377 Pat corresponding that aerial image of the pattern is composed spatial image measuring instrument that measures the light intensity of the (projected image), Ru.

[0083] Further, in the inner portion of the illumination unevenness measurement pinhole aperture pattern below the measurement table main body 59, and the light receiving system is provided including a light receiving element, Yotsute thereto, JP 57-1172 38 No. publications and U.S. patents corresponding to this 4, 465, 368 No. uneven illuminance meter measuring instrument has a pinhole-shaped light-receiving section that receives illumination light IL on an image plane of the projection optical science system PL as disclosed, etc. There has been configured.

[0084] Further, inside of the measuring table body 59 below the illuminance measurement aperture pattern, the light receiving system is provided including a light receiving element, which in Yotsute, for example, JP-11- 16816 No. Gazette and this is configured illuminance monitor having a light receiving portion having a predetermined area that receives illumination light IL via the water image plane of the projection optical system PL shown open in US Patent application Publication No. 2002Z0061469 Pat corresponding to . As long as the national laws in designated states in this international application (or elected states) allows, with the aid of disclosure of the above publications and the corresponding U.S. patent or U.S. patent application publication specification described herein some to be.

[0085] Further, inside of the measuring table body 59 below the wavefront aberration measurement aperture pattern, for example, the light receiving system is provided that includes a microlens array, for example, the International Publication No. 99/60361 Te cowpea thereto pamphlet and European Patent No. 1 corresponding thereto, 079, 223 No. wavefront aberration measuring instrument is disclosed in, for herein is configured.

[0086] The above aerial image measuring instrument 7, uneven illuminance measuring instrument, the illuminance monitor, and wavefront aberration measuring instrument is shown as a measuring instrument group 43.

[0087] In the present embodiment, liquid immersion exposure for exposing the © E wafer W is performed by the exposure light through the water projection optical system PL (illumination light) IL, the illumination light IL said illuminance monitor that is used to measure the use of, uneven illuminance measuring instrument, aerial image measuring instrument, in such a wavefront aberration measuring instrument, and thus that receives illumination light IL via projection optical system PL and the water. Therefore, the surface of the pre-chromatography bets 101 are subjected to water repellent coating. Each of the above instrument, for example, only a part of such an optical system is mounted on the measurement stage MST, it is good, and, it may also be arranged the entire instrument in measurement stage MST,.

[0088] the upper surface of the measuring table MTB (plate 101), X movable mirror 117X that has a reflection surface orthogonal to the X axis in the X-axis direction end (one X side end) is arranged extending in the Y-axis direction, Y movable mirror 117Y that has a reflection surface orthogonal to the Y axis in the Y-axis direction of the one end (one Y side end) is arranged extending in the X-axis direction. The reflecting surface of Y movable mirror 117Y, as shown in FIG. 2, the interferometer beam from Y-axis interferometer 16 constituting the interferometer system 11 8 (measurement beam) is projected, the interferometer 1 6 by receiving the reflected light, it measures the displacement of the reference position force of the reflecting surface of Y movable mirror 117Y. Further, the measuring table MTB is, when moved directly under projection unit PU, such as during measurement, the interferometer beams from X-axis interferometer 46 (measurement beams) is projected on the reflection surface of X movable mirror 117X, by receiving interferometer in 46 the reflected light, so as to measure the displacement from the reference position of the reflecting surface of X movable mirror 117X, Ru. Y-axis interferometer 16 has a projection center X-axis interferometer 46 long axis and major axis measured parallel to the Y-axis direction crossing perpendicularly measured in the above-mentioned in (optical axis AX) of the projection optical system PL, and that.

[0089] The Y-axis interferometer 16 is a multiaxial interferometer having at least three optical axes, the output values ​​of each optical axis can be measured independently, Ru. The output value of the Y axis interferometer 16 (the measurement value), as shown in FIG. 7, are supplied to main controller 20, based on the output value from the main controller 20 in the Y-axis interferometer 16, measurement not only the Y position of the table MTB, and summer as can be measured also pitching amount and Yoingu amount. The main control unit Te based! /, The output value from the 20 in X-axis interferometer 46, so as to measure the X position and the rolling amount of measurement table MTB, Ru.

[0090] As can be seen from the above description, in this embodiment, the interferometer bi chromatography beam from Y-axis interferometer 18 is constantly projected on movable mirror 17Y in the entire movement range of the wafer stage WST, Y-axis interferometer beam also interferometer 16 force is always to be projected to the movable mirror 117Y across the movement range of the measuring stage MST. Thus, for Y-axis direction, always stearyl chromatography di WST, the position of the MST is managed based on the measurement values ​​of Y-axis interferometer 18, 16 by the main controller 20.

[0091] the other hand, as will be easily imagined from FIG. 2, the main controller 20 only to the extent that corresponds to the interferometer beam force moving mirror 17X of the X-axis interferometer 46 or et of X-axis interferometer 46 manages the X position of wafer table WTB (wafer stage WST) based on the output value, only to the extent that corresponds to the interferometer beam force moving mirror 117X from X-axis interferometer 46, based on the output value of the X axis interferometer 46 Dzu, Te manages the X position of the measuring table MTB (measuring stage MST). Thus, while not manage X position based on the output value of the X-axis interferometer 46, © E Ha table WTB, the position of the measuring table MTB is adapted to be measured by the encoder, not shown, the encoder based on the measured values, the main controller 20, while not manage X position based on the output value of the X-axis interferometer 46, wafer table WTB, for managing the position of the measuring table MTB.

[0092] Further, the main controller 20, the interferometer beams from X-axis interferometer 46, movable mirrors 17X, 117 either to not exposed state force moving mirror 17X after straight to or started strikes the moving mirror 117X also of X Once it until reset the ChikaraTsuta X-axis interferometer 46 that has been used to control and thereafter it constitutes an interferometer system 118, a Y-axis interferometer 18, or 16, and X-axis interferometer 46 used, and summer to manage the position of the wafer stage WST or measurement stage MST.

[0093] In this embodiment, two Y-axis interferometers 16, 18, one and a X-axis interferometer 46, a plurality of force X-axis interferometer interferometer system 118 in FIG. 7 is configured provided always interferometer beam force moving mirror 17X from either X-axis interferometers, it may be adopted as hitting the 117X. In this case, wafer stage WST, a X-axis interferometer for managing the position of measurement stage MST, good be switched in accordance with the X position of these stages!,.

[0094] The irradiation multiaxial interferometers 45 ° inclined stage WST described above, via a reflection surface installed MST, and the Rezabi beam on the reflecting surface of projection unit PU is disposed on the holding member to be held and its also possible to detect the related that the relative position information in the optical axis direction (Z axis direction) of the projection optical system PL of the reflection surface and the stage good ヽ.

[0095] In addition, in exposure apparatus 100 of the embodiment, the holding member that holds projection unit PU, Ofakushisu. Araimento system (hereinafter, shortly referred to as "Araimento system") ALG (not shown in FIG. 1, 7, reference, etc. to FIG. 8 (A)) is provided. As the Araimento system ALG, if example embodiment shines irradiation broadband detection beam that does not expose the resist on the wafer to a subject mark, the image and non diagrams target mark formed on the light receiving surface by the light reflected also the subject mark force imaged using the shown index iMAGING device and an image of (Araimento based index pattern on an index plate provided in ALG) (CCD, etc.), an image processing method which outputs their imaging signals FI a ( Field Image Alignment) system sensor is used. Image pickup signal from Araimento system ALG are sent to the main controller 20 in FIG.

[0096] As the Araimento system ALG, is not limited to the FIA ​​system irradiates a coherent detection light to a subject mark, also detects scattered light or diffracted light generated at that target mark force, there have its target it is of course possible to use a combination marking force also generates two diffracted lights (e.g. diffracted lights of the same order or diffracted lights being diffracted in the same direction) ヽ is alone § Rye placements and detects an interference is appropriately .

[0097] In exposure apparatus 100 of the present embodiment, consists of the force irradiation system 90a and photodetection system 90b shown in FIG. 1 is omitted (see FIG. 7), for example, correspond to the publications and this Patent Laid-Open No. 6- 283403 U.S. Patent No. 5, 448, multiple point focal point position detection system similar oblique incidence type as disclosed in 332 Patent and the like. In the present embodiment, as an example, irradiation system 90a is of projection unit PU - held is supported by suspension by the holding member that holds projection unit PU in the X-side light-receiving system 90b is at the + X side of projection unit PU It is suspended beneath the member support. That is, the irradiation system 90a and photodetection system 90b, and projection optical system PL is attached to the same members, both positional relationship is kept constant. As long as the domestic laws and ordinances of the designated state was specified in the international application (or elected states) permit, a part of the present description by the disclosures of the above publications 及 beauty corresponding U.S. Pat.

[0098] Figure 7 is a main configuration of a control system of exposure apparatus 100 is shown. The control system is mainly configured of main controller 20 composed of a microcomputer (or workstation) that performs overall control of the instrumentation 置全 body. Further, the main controller 20, a memory MEM, CRT display (or LCD display) such as a display DIS is connected to Ru.

[0099] Next, in the exposure apparatus 100 of the present embodiment configured as described above, the parallel processing operation using the a Wehasu stage WST and measurement stage MST, FIG 8 (A) - based on FIG. 1 0 It described Te. Incidentally, during the operation below, main controller 20, the opening and closing control of each valve of the immersion device 13 and second liquid supply unit 288 and liquid recovery unit 292 is performed Te Unishi mentioned above, the tip of the projection optical system PL directly below the lens 91 that have been filled at all times water. However, in the following, for ease Ri component force of explanation, description will be omitted regarding control of liquid supply unit 288 and liquid recovery unit 292.

[0100] in FIG. 8 (A), dew step-and 'scan method for the wafer W (here, for example, one lot (one lot is the last wafer 25 sheets or 50 sheets)) on the wafer stage WST state light is being performed is shown. In this case, the measurement stage MST, Do not collide with Wehasute over di WST, waiting at a predetermined waiting position! /, Ru.

[0101] The above exposure operation, main controller 20 pre-made the example Enhansuto 'global. Araimento (EGA) web huh Lai placement results and baseline latest Araimento system ALG measurement results, such as such as pattern based Te, and shots between moving operation in which the wafer stage WST is moved to the scanning start position for exposure light of each shot area on the wafer W (acceleration starting position), which is formed on the reticle R the by repeating a scanning exposure operation for transferring the scanning exposure method in each shot area is performed.

[0102] Here, the shot-transfer operation in which the wafer stage WST is moved, while monitoring the measurement values ​​of the main control equipment 20 force interferometer 18, 46, X-axis linear motor 80 and Y-axis linear Amota 82, is performed by controlling the 83. Further, the scanning exposure described above, the main control unit 2 0 force interferometer 18, 46 and while monitoring the measurement values ​​of reticle interferometer 116, Rechikurusute chromatography di driver 11 and Y-axis linear motors 82, 83 (and X-axis by controlling the linear motor 80), the reticle R (reticle stage RST) and wafer W (wafer stage WST) and the relative scan in the Y-axis direction, between the end of acceleration after the deceleration immediately before in the relative scanning at constant speed, Ru is a reticle R (reticle stage RST) and © E wafer W with respect to the illumination area of ​​the illumination light IL (wafer stage WST) is achieved by moving a constant velocity synchronized with respect to the Y-axis direction. Incidentally, the exposure operation is performed while holding the water in the space between tip lens 91 and wafer W.

[0103] Then, the wafer stage WST side, Ueno, at the stage where exposure is completed for W, Omosei control device 20, the interferometer 16 of the measured value, and Y-axis linear based on the measurement values ​​of the encoder (not shown) controls the motor 84, 85 and X-axis linear motor LX, is moved to the position shown the measuring table MTB in FIG 8 (B). In the state of FIG. 8 (B), it is in contact with the end face and the end face of the Y side of wafer table WTB on the + Y side of the measuring table MTB. Note that the interference interferometer 16, 18 measurement table MTB by monitoring the measured values ​​of and the wafer table WTB by spaced about 300 m in the Y-axis direction may be kept in the non-contact state.

[0104] Then, the main controller 20, while maintaining the positional relationship between the Y-axis direction of the measuring table MTB and wafer table WTB, starts an operation of driving both stages WST, the MST + Y direction at the same time.

[0105] In this manner, the main controller 20, while the wafer stage WST, when measurement stage MST are simultaneously driven, in the state of FIG. 8 (B), tip lens 91 and wafer W of projection unit PU hydro wafer stage WST has been held in and moves in the + Y side of the measurement stage MST, successively moves the wafer W → wafer holder 70 → measurement table top MTB. Incidentally, during the movement of the wafer table WTB, measurement table MTB is maintained the positional relationship in contact with each other. The FIG. 9 (A), the immediately preceding middle water wafer stage WST of movement of the, state when simultaneously present on the measurement stage MST, i.e. water on © E wafer stage WST on force measurement stage MST passed the state is shown.

[0106] From the state of FIG. 9 (A), the further wafer stage WST, when measurement stage MST are simultaneously a predetermined distance driven in the + Y direction, as shown in FIG. 9 (B), the measuring table MTB and tip lens a state where water is held between the 91. Prior to this, the main controller 20, came to the interferometer beams from X-axis interferometer 46 is irradiated onto the movement mirror 117X on the measuring table MTB! /, X-axis interferometer at the point of Zureka run the 46 of the reset, Ru. Further, in the state in FIG. 9 (B), the main controller 20, the X position of wafer table WTB (wafer stage WST), are managed on the basis of the measurement values ​​of the encoder (not shown).

[0107] Then, the main controller 20 positions the interferometer 18 of the wafer stage WST, while managing on the basis of the measurement values ​​of the encoder, controls the linear motors 80, 82, 83, a predetermined © E Ha exchange moves the wafer stage WST to the position to exchange to the first wafer of the next lot, and in parallel with this, executes as necessary a predetermined measurement using measurement stage MST. As such measurement, for example, it is performed after the reticle exchange on the reticle stage RST, baseline measurement of Araimento system ALG as an example. Specifically, the main controller 20, the Rechikuruarai placement marks on the reticle corresponding to the pair of first reference mark standards mark area FM provided on plate 101 on the measurement table MTB previously described Rechikurua Raimento system RAa, detects the positional relationship between the reticle § Rye instrument mark corresponding to the first reference mark of a pair simultaneously detected using RAb. This at the same time, the main controller 20, by detecting the second reference mark of the reference mark area FM in § la Imento system ALG, detects the positional relationship between the detection center and the second reference marks Araimento system ALG to. Then, the main controller 20, the positional relationship of the reticle § Rye placement marks that corresponds to the first reference mark of the pair, and the positional relation between the detection center and the second reference marks Araimento system ALG, the known pair first based on the first reference mark and the position relationship between the second reference mark, a distance between the detection center of projection center and Araimen preparative system ALG of the reticle pattern by the projection optical system PL, ie, determining the baseline Araimento system ALG. The state at this time is shown in FIG. 10.

[0108] The formation with measuring the baseline of the above Araimento system ALG, a plurality of pairs to form a Rechiku Rua line placement marks on the reticle, the first reference mark pairs in the reference mark area FM Correspondingly ; then, the relative positions of the retinal Kuru § Rye instrument mark corresponding to the first reference mark at least two pairs, the reticle stage RST, while step moves the wafer stage WST in the Y-axis direction, reticle § Lai instrument system RAa, RAb by measuring with a so-called reticle § Lai placement is performed.

[0109] In this case, the reticle § Lai instrument system RAa, mark detection using RAb is performed via projection optical system PL and the water.

[0110] Then, at the stage where both stages WST described above, the work on MST has been completed, Omosei control device 20, and a measurement table MTB and wafer table WTB (wafer stage WST), contacting, maintaining the state and while, driven in the XY plane, returning the wafer stage WST directly under projection shadow unit. Also during this movement, main controller 20, the X-axis at the point of interference interferometer beams if Re not a! /, Was to be irradiated onto the movement mirror 17X on the wafer table WTB from X-axis interferometer 46 running reset of the interferometer 46. Then, the wafer stage WST side, web huh Lai placement on the wafer after the replacement, that is, the position coordinates of a plurality of shot areas detecting ascending ,, wafer in § Rye placement mark on the wafer after the replacement by Araimento system ALG It is calculated. It should be noted that, as described above, even if the measuring table MTB and Wehate table WTB (wafer stage WST) in a non-contact Good Condition! ,.

[0111] Thereafter, the main controller 20, while maintaining the inverse of the positional relationship between the Y-axis direction and the measuring table MTB wafer table WTB (wafer stage WST) to the previous, both stages WST, the MST in the Y direction at the same time driving to, after moving the wafer stage WST (Ueno) below of the projection optical system PL, and retracts the measurement stage MST to a predetermined position.

[0112] Thereafter, the main control unit 20, the and run the exposure operation by the step 'and' scan method for the new wafer similarly sequentially transferred reticle patterns on the plurality of shot areas on the wafer.

[0113] In the above description, as the measurement operation, but explains the case of performing the baseline measurement, is not limited to this, while performing exchange of the wafer in the wafer stage WST side, measurement stage MST using the measuring instrument group 43, illuminance measurement, uneven illuminance measurement, aerial image measurement, performs like wavefront aberration measurement, may be reflected in exposure of a wafer is performed using the measurement results subsequently. Specifically, for example, it may be to adjust the projection optical system PL via imaging characteristic correction controller 381 described above on the basis of the measurement result

[0114] In this case, depending on the time required for the wafer exchange, for each wafer exchange, the different measurement may be a row of Ukoto. Also, if one measurement is not completed during the wafer exchange one degree it can also be possible to perform a plurality of times by dividing the measurement.

[0115] Meanwhile, as described above, wherein the measurement using each instrument, on Plate 101 of the measuring table MTB, because it is performed in a state where water is filled, the surface (upper surface) of the plate 101 water-repellent coat is applied. While by force, the water repellent coating is to degrade the Jakugu long ultraviolet rays are irradiated to the ultraviolet, it is necessary to perform maintenance of the water repellent coating portion (exchange) at a predetermined frequency. In view of the above, in exposure apparatus 100 of the present embodiment, the measuring table MTB, and the engagement with other components and the non-contact measurement stage MST. That is, by shifting the measurement table MTB on the + Y side, X linear motor LX, by releasing the engagement between the Y voice coil motors VY respective mover and stator, FIG.

3 as shown (B), the measuring table MTB, and summer so that it can be removed easily even other components force of the measuring stage MST. In the present embodiment, Tokoro the replacement time constant, Ru ヽ as exchanging measurement table MTB to the new measurement table.

[0116] As timing for exchanging measurement table MTB is the measurement accuracy of various measurements satisfactorily maintained, and from the viewpoint you minimize equipment downtime due to replacement of the measuring table MTB, water repellent coating There just before (immediately before the degradation exceeds a predetermined allowable range) to deteriorate and to Rukoto desirable.

[0117] Therefore, in the present embodiment, by experiment, based on the relationship between the change in the measurement results of various measuring instruments provided deterioration and the measuring table MTB of the water repellent coating, immediately before the water repellent coating is degraded obtains a measurement of various measuring instrument, and stored in the memory MEM (see FIG. 7) the value of the boundary of the measurement results of various instrument exceeds the allowable value as a threshold value. Then, during use of the device, when the measurement using the measurement table MTB is performed, the main controller 20, by comparing the total measured result and the memory MEM on the stored threshold, replacement time is It is set to be determined whether the incoming. Then, the main controller 20, when the replacement timing has been judged to have arrived, so indicate on the display DIS (see FIG. 7). Therefore, the operator stops the operation of the exposure apparatus 100 to perform replacement of the measuring table MTB in the manual. That is, in this embodiment, has a detection device for detecting the replacement timing of the plates 101 by the main controller 20 and the memory MEM is configured.

[0118] Incidentally, when provided with a like robots used in replacement of the measuring table MTB, main controller 20, and displays the replacement timing on the display DIS, and stop the operation of the apparatus, the robot by using a, as well as carry the measuring table MTB to the outside, a new measurement table, it is also possible to carry on the measurement stage main body 81c.

[0119] In addition, the detection timing of replacing the measurement table MTB, for example separately from the exposure light, the light (detection light) exposure light having the same wavelength, leads in the vicinity of projection unit PU by using an optical fiber or the like , the portion other than the portion used for the various measurements of the plate 101 of the measuring table MTB, is irradiated with only the detection light measurement time of the same (or somewhat longer) time, the detection light intensity when (light amount) or the like, measured by the light sensor provided as a replacement time detecting only, by calculating the deterioration degree based on the result of this measurement, it is also possible to determine the arrival of the replacement timing. Other this, based on the degradation time obtained in advance by simulation or the like, such as by using a timer, it is also possible to predict the degree of deterioration. In short, to detect the deterioration degree of the water repellent co over preparative using some means, if it is possible to detect that the replacement time has arrived, regardless the technique.

[0120] As described above in detail, according to exposure apparatus 100 of the present embodiment includes a plate 101 which water (liquid) is subjected supply, meter to perform measurements relating to exposure through the projection optical system and the water in measurement stage MST, the measuring table MTB which includes a plate 101 is interchangeable. Therefore, the plate 101 surface in a state where water has been supplied, when der connexion the measurement in relation to the exposure via the projection optical system PL and the water is repeatedly performed using the measurement stage MST also, the plate 101 surface with water before deterioration in contact, by exchanging measurement table MTB, can be performed always accurate measurements in relation to the exposure, it is possible to maintain and thus highly accurate exposure light.

[0121] Further, in the exposure apparatus of the present embodiment, determined by an experiment or the like in advance the timing just before the measurement accuracy of the various instruments provided in the measuring table MTB begins to drop, the replacement time of the time measuring table MTB It is preset as the arrival of the timing detected by the main control unit 20 forces as described above. Therefore, by replacing the measurement table MTB in accordance with the detection result, that measurement accuracy of the various instruments provided in the measuring table MTB to exchange measuring table MTB to the previous best time than lower down It can become. Ie, it is possible to you to maintain the measurement accuracy of the measurement in relation to the exposure by the measuring table MTB in high precision, it can be suppressed as much as possible the replacement frequency of the measuring table MTB. Thus, over the exposure accuracy long it is possible to maintain high precision, thereby enabling you to prevent a decrease in device operation efficiency due to an increase in the downtime associated with replacing the measurement table effectively.

[0122] Further, according to exposure apparatus 100, by immersion exposure, as compared with the high resolution and in the air by performing the exposure of a large focal depth, it is possible to transfer the pattern of the reticle R to accurately on the wafer , for example, it is possible to realize the transfer of 70- LOOnm about a fine pattern as a device rule.

[0123] In the above embodiment, in which the force present invention described is limited to the case where measurement stage MST is provided with a measuring table MTB can be replaced nag measurement stages MST itself interchangeable, i.e., engagement between the mover and the stator of the Y Zichri Yuamota for driving the measurement stage in the Y-axis direction may be employed releasable configuration.

[0124] In the above embodiment, in which the force present invention described is limited to being this case the measuring table MTB is detachable from the Leveling table 52 constituting the measuring stage MST Nag example, measurement table may be stopped Flip sleep on the part of the measuring stage MST. Even when a force mow, the measurement table by unscrewing a replaceable's force.

[0125] In the above embodiment, a leveling table 52 is 6 degrees of freedom has been described the case where the configuration having the measuring table MTB force S3 freedom, not limited to this, the leveling table 52 is 3 free time, may be adopted measurement table MTB has three degrees of freedom. Also, without providing the leveling table 52, it is also possible to adopt a configuration that measurement table MTB is Yusuke six degrees of freedom. In short, good if at least part is replaceable configuration of the measuring unit includes a plate 101,.

[0126] In the above embodiment has described the case of employing a piston-shaped self-weight canceller 58 as a mechanism for canceling the dead weight of leveling table 52 is not limited to this, a bellows-shaped self-weight canceller such adopted may be able to. In addition, good!, Be canceled by its own weight canceller 58 the weight of the wafer stage main body 28.

[0127] "Second Embodiment"

Next, a second embodiment of the present invention FIG. 11 will be described with reference to FIG. 12. Here, the first embodiment and the same or equivalent parts of the aforementioned, it is assumed that the same reference numerals to simplify the description in together when, or omitted. The exposure equipment of the second embodiment, configuration and the like of the measurement stage of a measuring unit is different from the first embodiment described above, the configuration of the other portions, the first embodiment described above and summer as well. Therefore, in the following description will focus on differences from the viewpoint of avoiding redundant description.

[0128] Figure 11 is a measurement stage MST according to the second embodiment 'is that is shown in a perspective view. Comparing the FIG. 11 and FIG. 3 (A), the measuring stage MST according to the second embodiment ', the place of the measuring table MTB of the first embodiment described above, the measuring table MTB as measuring unit' it can be seen that is provided. The measurement table MTB 'includes a measurement table main body 59 and slightly different configuration measuring table body 159 described above, the plate 101 which is detachably mounted on the measuring table body 159' and a. Therefore except for the these, it is basically the same configuration as the above-mentioned measuring table MTB, have the same function.

[0129] The plate 101 ', the same as the first embodiment, for example, Zerodur (Schott trade name), is composed of glass material strength such as quartz glass, chrome over substantially the entire surface of the surface coating It is, measuring instruments of the region and the reference mark region is provided in some places. And in the region of the measuring equipment, the pattern Jung is subjected, as in the first embodiment of the aerial image measurement aperture pattern (e.g. slit-shaped aperture pattern) of the above, pinholes Lumpur opening pattern for uneven illumination measuring, illuminance measurement aperture pattern, and measurement aperture pattern, such as wavefront aberration measurement aperture pattern is formed.

[0130] Also, Y-side end surface and the X-side end surface of the plate 101 ', the reflective surface mirror-polishing is applied (movement mirror on the measuring table MTB in the first embodiment 117X, corresponding to the reflection surface of 117Y) is It is formed. Also in the second embodiment, the plate 101 'in a state where the water on the supplied, since various measurements are carried out, the plate 101' on the surface of which is decorated with water-repellent coat.

[0131] In this second embodiment, the plate 101 'via a vacuum chuck (not shown) provided on the measuring table body 159 is attracted and held on the measuring table body 159. Of course, not limited to vacuum suction, mechanical - using local mechanism, it is also possible to fix the plate 101 'in the measurement table the body 159.

[0132] the measuring table body 159, in its interior, corresponding respectively to the various measuring aperture patterns described above, is that a plurality of light-receiving systems are provided, is the same as the first embodiment described above . However, on the upper surface of the measuring table body 159, + in the center of the Y-axis Direction of X side end surface of the groove 21a extending in the X-axis direction to the region below the plate 101 'is mounted is formed, X in the vicinity of an end of the Y-axis on one side and the other side in the direction of the end face of the side grooves 21b extending in the X-axis direction to the region below the plate 101 'is mounted, 21c is that being formed respectively.

[0133] 'Above the, plate 101' measurement stage MST in FIG. 11 loading and unloading mechanism 24 is provided that is used to carry in and out. The loading and unloading mechanism 24, in fact, the base plate 12 - are provided above the Y-direction end portion vicinity.

[0134] loading and unloading mechanism 24, the Y-axis direction slide operation and the Z axis direction about the lifting operation can main body 27 about, attached to the body portion 27, movement in the opposite direction with respect to the X-axis direction (cross the approach, the two hand section 25a of the movement in the direction away) when viewed from capable + Y direction substantially L-shaped, and a 25b. [0135] One of the hand portion 25a in a state where the end portion of the outer the + X side of the main body portion 27 overhangs, mounted in a support state suspended to the main body 27, the end portion of the + X side the hook portion 26a is kicked set. Further, the other hand section 25b, the outside of the main body 27 - in a state where the end portion of the X-side out tension mounted in supporting a suspended state in the main body 27, the end portion of the X side, Y extending portion is provided extending in the axial direction, the end portion of the end and the Y-side of the + Y side of the extension portion, the hook portion 26b, 26c is provided. Hook portion 26a, 26b, 26c are provided at substantially the same height position.

[0136] the hand section 25a, 25b is by a driving mechanism (not shown) provided in the main body portion 27, along the X-axis Direction is slidable in opposite directions to each other! / Ru (i.e., are opened and closed). The loading and unloading mechanism 24, are controlled by the main controller 20.

[0137] configuration and the like of other parts are summer as in the first embodiment described above. Accordingly, the present also in the exposure apparatus of the second embodiment, the first embodiment and the exposure operation and measurement operation in the same sequence is performed as described above.

[0138] In the second embodiment, as in the first embodiment, by experiment, various measuring instruments, which are arranged at measurement table MTB 'and deterioration of the water repellent coating measurement result changes in based on the relationship, it obtains the measurement values ​​of the various instruments just before the water repellent coating is deteriorated and stored in the memory MEM the values ​​of the boundary of the measurement results of various instrument exceeds the allowable value as a threshold value. Then, the measuring table MTB 'when the measurement using was performed, by comparing the stored threshold to the main controller 20 forces the measurement results and memory MEM, the plate 101' mosquitoes replacement timing has come to determine ゝ whether. That is, in the second embodiment, comprise Omosei control device 20 and the memory MEM, detection apparatus for detecting constitute the arrival of replacement timing of plate 101 '.

[0139] Further, the plate 101, the replacement timing of the detection of even good be performed using other techniques listed in the above first embodiment.

[0140] In any event, the main controller 20, the plate 101 'Then replacement time detection of (determined that replacement time has arrived), to display the arrival of the replacement timing on the display DIS, the instruction is also the operator force wait. Alternatively, the plate 101 replacement time detection of '(judges that replacement time has arrived), the main controller 20 displays an arrival of replacement timing on the display DIS, as follows, the plate 101, the exchange of I do.

[0141] That is, the main controller 20, after moving the loading and unloading mechanism 24 to the position shown in FIG. 11, by driving the main body 27 downward, the hook portion in a state where the hand portion 25a, 25b is opened 26a, 26b, 26c of the foregoing grooves 21a, 21b, also upward force therein 21c inserted. Then, the main control equipment 20 via the drive mechanism within the main body 27, closes the hand section 25a, and 25b by a predetermined amount. Thus is driven by the hand portion 25a gar X side, the hand section 25b is driven in the + X side, hook 咅 26b of the hook 咅 26a and Nono command 咅 25b of Nono command 咅 25a, 26c and the force ^ play Bok 101 ' becomes ^ to be Tatsu置; respectively under side of the. Figure 12 is a state at this time. This and can hook portion 26b, 26c, the plate 101, is not in contact with the end face of the X-side.

[0142] In the state of FIG. 12, the main controller 20 stops the vacuum Chiya click of the measuring table body 159, after releasing the vacuum suction plate 101 ', the main body portion 27 + Z direction lifting the plate 101 'by the hook portion 26A-26c by driving moving to. Thereafter, the main controller 20, after rising driven main body 27 to a predetermined height, by driving the Y side, pass the plate 101 'to the transport system (not shown). Thus, by the transport system, plates 101 'is carried out to the outside of the exposure apparatus, the new plate 101' is, by the transfer system, is conveyed to a predetermined position inside the exposure device, waiting at that position Nono command section 25a of the loading and unloading mechanism 24, is passed to 25b.

[0143] Thereafter, the main controller 20, by performing the reverse operation is carried onto the new plate 101 'force measuring table body 159. However, the new plate 101 'during loading of the main controller 20, the new plate 101 to the position determining pin (not shown) provided on the measuring table body 159' is pressed against and end face of the + X side of the performing the rough positioning and the like. After completion of positioning, the main controller 20 turns on the Bakyu Muchakku not shown attracts and holds a new plate 101 'on the measurement table main body 159.

[0144] In this case, the plate 101 as described above 'the end surface of the Ru that is mirror mosquito 卩E, as described above, the plate 101' is also possible to position the rough, performed thereafter, measuring stage MST 'during the various measurement using the plate 101' it is possible to accurately measure and have use an interferometer the position of, consequently, a variety of measurement using measurement stage MST ', the plate exchange after it is possible to perform with high accuracy.

[0145] As described above, according to the exposure apparatus of the second embodiment, determined by an experiment or the like in advance the timing immediately before the various instruments of measurement accuracy of the measuring table MTB 'begins to decrease, the timing of this the plate 101, by setting in advance as the exchange timing of, as the detection device main controller 20 'by the exchange of, measuring table MTB meter' plate 101 when detecting the replacement timing on the measurement accuracy of various measuring instruments it is possible to replace the plate to a previous best time than decreases. That is, it is possible to maintain the measurement accuracy of the measurement in relation to the exposure by the various measuring devices on the measuring table MTB 'with high precision, it can be suppressed as much as possible the frequency of replacement of the plate. Thus, over the exposure accuracy long it is possible to maintain high precision, it is possible to prevent a decrease in device operation efficiency due to an increase in the downtime associated with replacing the plate effectively.

[0146] Further, in the second embodiment, the plate 101 ', since the two end faces are mirror-mosquito 卩E, plate 101' when replacing with a new, plate after the exchange the be positioned roughly through the mirror mosquito 卩E end faces of the plate, the interferometer 16, 46 the position of the plate can be accurately measured using. Therefore, even if positioning the plate roughly when replacing, because the measurement table WTB constituting the measuring unit during the measurement it is possible to accurately position a desired position, necessary to apply a long time to exchange is eliminated, in terms of this, it becomes possible to effectively prevent a decrease in device operation efficiency due to an increase in downtime for replacement.

[0147] Also, in the exposure apparatus of the second embodiment, since the immersion exposure is performed, it is possible to transfer the pattern of Rechiku Le R good precision on the wafer.

[0148] Incidentally, in the second embodiment, the measuring unit forces the invention shall plate 101 'is exchangeable comprises a plate Nag is limited thereto (measurement of the second embodiment at least part of the table is equivalent) is not good if it is configured to be interchangeable.

[0149] Further, in the second embodiment, 'to the foot lil so rough positioning during replacement of the plate 101' plate 101 is not limited to the end face of the this force shall mirror mosquitoes 卩E , as in the first embodiment described above, it may be provided a movable mirror 117X, 117 Y on the measuring table body 159.

[0150] Further, in the above second embodiment, good long plate and is exchangeable construction, so construction of other parts of the meter measuring stage, it is limited to the configuration shown in FIG. 11! / ヽ. For example, employing the configuration of the measurement stage, such as a wafer stage WST in FIG. 2, it may be replaced by constituting the plates this total measuring stage provided.

[0151] Further, in the above second embodiment, as a mechanism for exchanging plate 101 ', it has been described to employ a loading and unloading mechanism 24 shown in FIG. 11, in place of the 該搬 passing mechanism 24, the wafer loader the robot used in such, may be employed as the loading and unloading mechanism. In this case, to adopt a configuration in which measurement table Myutaubeta, end portions on both sides to the plate in the X-axis direction is protruded, may be performed plate exchange lift the lower force plate by the arm of the robot, provided the vertical movement mechanism order to increase the plate from the measurement table main body 159 by a predetermined height measurement table MTB ', above clogs state has plates in the vertical movement mechanism, to insert the arm of the robot under the plate good, it is also possible to carry out the pre-over-switched to lift the arm Te.

[0152] In the above embodiments, although the present invention has been described when applied to immersion exposure apparatus is not limited to this, even if an exposure apparatus for performing exposure not immersion, the first and allowing exchanging at least a portion of similarly measuring unit in the embodiment (e.g., the provision of interchangeable measurement table (or measurement stage)), the second embodiment as in the replaceable plate of provided, that mirror polishing the end face of the plate, and further, by providing a detecting device for detecting at least a portion of the replacement timing of the measuring part including the plate is effective. In this case, it is not necessary to apply a water-repellent coating on the plate, by replacing a part of the measuring part including the plate, reduction of various measurement accuracy of attributable to the plate of deterioration due to irradiation with exposure light of high engineering Nerugi is the force can be effectively prevented.

[0153] In the above embodiments, apart from the wafer stage WST, the measuring table Myutaubeta, it is assumed that providing a measurement stage that constitutes a measurement section having a MTB ', measuring unit, © enol, in stage WST it may be be provided. In this case, good if Re ヽ is detachably attached to at least some force the wafer stage WST comprises a plate of the measuring unit constituting the measuring unit (exchangeable)! ヽ. [0154] In the above embodiments, one wafer stage stage apparatus has been described that includes one measurement stage, is to be understood that the invention is limited thereto improve the throughput of the Nag EXPOSURE operation to, Ueno, yet good as providing a plurality of stages.

[0155] In the above embodiments, it is assumed to use ultra pure water (water) as a liquid, is not limited to Re present invention forces is a matter of course. The liquid, a chemically stable, having high transmittance safe liquid of the illumination light IL, may be used, such as a fluorine-containing inert liquid. As the fluorine-based inert liquid, for example, Fluorinert (US Suriemu trade name) is can use. The fluorine-based inert liquid is also excellent from the point of cooling effect. Further, as a liquid, also possible refractive index There is permeable to irradiation bright light IL is Kogu, stable ones against the photoresist coated on the projection optical system Ya © E c surface (e.g. cedar oil, etc.) It can also be used. In addition, F Les

If the 2-The light source may be Re select the Fomblin oil.

[0156] In the above embodiment, by providing a filter when the recovered liquid Yogu be reused This is to remove impurities from the recovered liquid liquid recovery unit, a recovery pipe or the like put it is desirable.

[0157] In the above embodiments, most optical elements of the image plane side is assumed to be the tip lens 91 forces the optical elements of the projection optical system PL, limited to the lens Nag projection optical system PL optical properties, such as the aberration (spherical aberration, coma aberration, etc.) may be an optical plates used to adjust the (plane-parallel plate, etc.), it may be a simple cover glass. The optical element closest to the image plane side of the projection optical system PL (tip lens 91 in the above embodiments), due to the adhesion of impurities scattered particles or liquid generated from the resist by the irradiation of illumination light IL liquid ( in the embodiments described above may be contaminated its surface in contact with water). For this reason, the optical element, and that the bottom in the detachable (interchangeable) freely fixed barrel 40, may be replaced periodically.

[0158] In this case, when the optical element in contact with the liquid is a lens, its cost of replacement parts will be summer long time required for Kogu and replacement, maintenance costs increase and the throughput of the (running cost) It leads to a decrease. Therefore, the optical element to make contact with the liquid, be inexpensive plane parallel plate than the lens 91 For example good.

[0159] In the above embodiments, the case has been described where the present invention is applied to a scanning exposure apparatus such as a step 'and' scan method, the scope of the present invention is not limited thereto as a matter of course. That projection exposure apparatus by a step 'and' repeat system, is La, the exposure apparatus of the step-and 'Sutitsuchi method, or the like even exposure equipment of proximity type, the present invention is applicable.

[0160] exposure apparatus Nag being limited to the exposure apparatus for manufacturing semiconductor applications, for example, exposure apparatus for transferring a liquid crystal display device pattern onto a rectangular glass plate, organic EL, thin-film magnetic head , the imaging device (CCD etc.), can be widely applied to an exposure apparatus for manufacturing micromachines, DNA chips, and the like. Further, the light exposure apparatus Nag only micro devices such as semiconductor devices, EUV exposure apparatus, X-ray exposure apparatus, and in order to produce a reticle or mask used in an electron beam exposure device, a glass substrate or Shirikonwe Ha etc. also the present invention can be applied to an exposure apparatus for transferring a circuit pattern.

[0161] Note that the light source of the exposure apparatus of the above embodiment is not limited to the ArF excimer laser, KrF excimer laser (output wavelength 248 nm), F laser (output wavelength 157 nm), Ar laser (output

2 2 power wavelength 126 nm), and pulsed laser light source such as a Kr laser (output wavelength 146 nm), 8-wire (

2

Wavelength 436 nm), Rukoto using a high pressure mercury lamp that generates an emission line such as i-line (wavelength 365 nm) is also possible. It is also possible to use a YAG laser harmonic generator. In addition, the infrared region oscillated DFB semiconductor laser or fiber laser power, or a single-wavelength laser beam in the visible region, for example, erbium (or both erbium and ytterbium) is a fiber amplifier doped with nonlinear optical crystals may be used harmonics wavelength conversion into ultraviolet light using a. In addition, the projection optical system magnification and an enlargement system of not only a reduction system! ヽ good in deviation ヽ.

[0162] In the above embodiments, not limited to the above optical wavelength LOOnm the illumination light IL of the exposure apparatus, it goes without saying that even by using a light having a wavelength less than lOOnm. For example, in recent years, in order to expose a pattern equal to or less than 70nm, the SOR or a plasma laser as a light source to generate an EUV (Extreme Ultraviolet) light in a soft X-ray range (e.g. a wavelength range of 5-15 nm), the exposure wavelength (e.g., 13. 5 nm) All reflection reduction optical system designed under the and development of EUV exposure apparatus using a reflective mask is performed. Oite This unit configured to scan exposure is performed by synchronously scanning a mask and a wafer using a circular arc illumination can be considered.

[0163 The semiconductor device includes the steps of performing a function and performance design of the device, the step of fabricating this design stearyl Tsu based on up was reticle, stearyl-up of fabricating wafers from silicon material, the above-described embodiments lithography step where the pattern formed on the mask resist (photosensitive agent) is transferred onto the wafer coated with an exposure apparatus, a device assembly step (dicing, dicing step, bonding step, comprising the Roh Kkeji step), an inspection step, etc. It is manufacturing through. In this case, in the lithography step, the above-described embodiments of an exposure device is used Runode can be realized over a long term exposure with high precision. Therefore, it is possible to improve the productivity of highly integrated microdevices on which fine patterns are formed.

Industrial Applicability

[0164] As described above, the exposure apparatus and the exposure method of the present invention and a device manufacturing method, a semiconductor device (integrated circuit) is suitable for manufacturing electron devices such as a liquid crystal display device.

Claims

The scope of the claims
[1] An exposure apparatus that exposes a substrate via a projection optical system,
A movable substrate stage by placing the substrate;
Has a plate which liquid is supplied, via the projection optical system and the liquid performs measurement related to the exposure light and the measuring unit; equipped with,
Wherein at least a part including the plate that constitutes the measurement portion is configured to be replaced! Exposure apparatus characterized by Ru.
[2] The exposure apparatus according to claim 1,
The measuring unit consists of a part on at least a part is provided measurement unit of the substrate stage, a part of the configuration member including at least the plate that constitutes the measurement unit is detachably attached to the substrate stage exposure apparatus, characterized in that attached to.
[3] The exposure apparatus according to claim 1,
The measurement unit, the exposure to a measurement stearyl over di body movable in a two-dimensional plane independently of the substrate stage, and the measurement table main body that holds the plate, characterized in that it comprises a device.
[4] The exposure apparatus according to claim 3,
The plate exposure device, characterized in that it is detachably held the measuring table body force.
[5] The exposure apparatus according to claim 4,
Further comprising a leveling table attached on the measurement stage main body, wherein the measurement table main body, an exposure apparatus according to claim ヽ isosamples is finely movable supported on said leveling table.
[6] The exposure apparatus according to claim 5,
The leveling table is drivable in directions of six degrees of freedom,
The measuring table body, an exposure apparatus, characterized in that the drivable in directions of three degrees of freedom in a horizontal plane.
[7] The exposure apparatus according to claim 3, the exposure apparatus comprising: a self-weight compensation mechanism for compensating the weight of the measurement table main body.
[8] The exposure apparatus according to claim 1,
It said plate includes at least one reference mark, and at least one measurement pattern is formed,
The measurement unit, the exposure apparatus characterized by having a light receiving system for the exposure light irradiated on the plate via the projection optical system, for receiving via a front Symbol measurement pattern.
[9] The exposure apparatus according to claim 8,
Wherein the plate, a plurality of types of measurement pattern is formed,
The measuring unit, in response to the measurement pattern, the exposure apparatus characterized by having a plurality of said light receiving system.
[10] The exposure apparatus according to claim 9,
The plurality of types of measurement pattern is open pattern aerial image measurement, uneven illumination measuring pinhole aperture pattern, illuminance measurement aperture pattern, characterized in that it comprises at least one of a wavefront aberration measurement aperture pattern exposure apparatus.
[11] The exposure apparatus according to claim 1,
The exposure apparatus, characterized in that it comprises a separate substrate stage at least 1 Tsu further includes a substrate wherein the substrate stage is mounted.
[12] The exposure apparatus according to claim 1,
The measurement by the measuring unit, and further comprising a control device for performing in accordance with the exchange time of the substrate on the substrate stage exposure apparatus.
[13] In the exposure apparatus according to claim 12,
Wherein the control device, the measurement of the specific type, the exposure apparatus characterized by partial Ke and executes a plurality of times in accordance with the exchange time of the substrate.
[14] An exposure apparatus that exposes a substrate via a projection optical system,
A movable substrate stage by placing the substrate;
At least one end face has a plate that has been mirror-finished, said a measuring unit performs measurement related to the exposure via the projection optical system; wherein the at least a portion including the plate that constitutes the measurement section can be exchanged exposure apparatus, characterized in that is configured! Ru to.
[15] The exposure apparatus according to claim 14,
The measuring unit consists of a part on at least a part is provided measurement unit of the substrate stage, a part of the configuration member including at least the plate that constitutes the measurement unit is detachably attached to the substrate stage exposure apparatus, characterized in that attached to.
[16] The exposure apparatus according to claim 14,
The measurement unit, the exposure to a measurement stearyl over di body movable in a two-dimensional plane independently of the substrate stage, and the measurement table main body that holds the plate, characterized in that it comprises a device.
[17] In the exposure apparatus according to claim 16,
The plate exposure device, characterized in that it is detachably held the measuring table body force.
[18] The exposure apparatus according to claim 17,
Further comprising a leveling table attached on the measurement stage main body, wherein the measurement table main body, an exposure apparatus according to claim ヽ isosamples is finely movable supported on said leveling table.
[19] The exposure apparatus according to claim 18,
The leveling table is drivable in directions of six degrees of freedom,
The measuring table body, an exposure apparatus, characterized in that the drivable in directions of three degrees of freedom in a horizontal plane.
[20] The exposure apparatus according to claim 17,
Exposure apparatus, characterized in that it comprises a weight compensation mechanism for compensating the weight of the measurement table main body.
[21] The exposure apparatus according to claim 14,
It said plate includes at least one reference mark is at least one of the measurement pattern is formed, the measurement unit, the exposure light irradiated on the plate via the projection optical system, before Symbol measurement pattern exposure apparatus characterized by having a light receiving system that receives through.
[22] In the exposure apparatus according to claim 21,
Wherein the plate, a plurality of types of measurement pattern is formed,
The measuring unit, in response to the measurement pattern, the exposure apparatus characterized by having a plurality of said light receiving system.
[23] The exposure apparatus according to claim 22,
The plurality of types of measurement pattern is open pattern aerial image measurement, uneven illumination measuring pinhole aperture pattern, illuminance measurement aperture pattern, characterized in that it comprises at least one of a wavefront aberration measurement aperture pattern exposure apparatus.
[24] The exposure apparatus according to claim 14,
At least Tsu further so comprising an exposure device another substrate stage and the substrate stage which the substrate is mounted.
[25] The exposure apparatus according to claim 14,
The measurement by the measuring unit, and further comprising a control device for performing in accordance with the exchange time of the substrate on the substrate stage exposure apparatus.
[26] The exposure apparatus according to claim 25,
Wherein the control device, the measurement of the specific type, the exposure apparatus characterized by partial Ke and executes a plurality of times in accordance with the exchange time of the substrate.
[27] An exposure apparatus that exposes a substrate via a projection optical system,
A movable substrate stage by placing the substrate;
Have interchangeable plates, a row intends measurement unit measurements related to the exposure via the projection optical system;
Exposure equipment, characterized in that it comprises a; detector and for detecting the replacement time of the plate.
[28] The exposure apparatus according to claim 27,
It said plate includes at least one reference mark is at least one of the measurement pattern is formed, the measurement unit, the exposure light irradiated on the plate via the projection optical system, before Symbol measurement pattern exposure apparatus characterized by having a light receiving system that receives through.
[29] The exposure apparatus according to claim 28,
Wherein the plate, a plurality of types of measurement pattern is formed,
The measuring unit, in response to the measurement pattern, the exposure apparatus characterized by having a plurality of said light receiving system.
[30] The exposure apparatus according to claim 29,
The plurality of types of measurement pattern is open pattern aerial image measurement, uneven illumination measuring pinhole aperture pattern, illuminance measurement aperture pattern, characterized in that it comprises at least one of a wavefront aberration measurement aperture pattern exposure apparatus.
[31] The exposure apparatus according to claim 27,
The exposure apparatus, characterized in that it comprises a separate substrate stage at least 1 Tsu further includes a substrate wherein the substrate stage is mounted.
[32] The exposure apparatus according to claim 27,
The measurement by the measuring unit, and further comprising a control device for performing in accordance with the exchange time of the substrate on the substrate stage exposure apparatus.
[33] The exposure apparatus according to claim 32,
Wherein the control device, the measurement of the specific type, the exposure apparatus characterized by partial Ke and executes a plurality of times in accordance with the exchange time of the substrate.
[34] according to claim 1 one 33, use an exposure apparatus according to the deviation or claim, including as lithographic Ye that transfers a device butter over on to the substrate Te, a device manufacturing method.
[35] An exposure method for exposing a substrate,
Of the measurement unit for performing measurements related to the exposure via a plate which liquid is supplied, a step of exchanging at least a portion comprises a pre-Symbol plate;
Step and wherein the measurement in relation to the exposure line ,, by reflecting the measurement results of exposing the substrate with the measuring unit after the replacement; exposure method comprising!.
[36] An exposure method for exposing a substrate,
Of the measurement unit for performing measurement concerning the exposure of at least one end face through a plate that has been mirror finished, a step of exchanging at least a portion comprising said plate; the position of the plate after the exchange via the end face Te measured, performs the measurement using the measurement unit and the step;
Process and of exposing the substrate to reflect the measurement results; exposure method comprising.
An exposure method for exposing a substrate,
A step performs the measurement using the measurement unit for performing measurements related to the exposure via a plate;
Detecting the replacement time of the plate, a step of exchanging the plate;
Process and of exposing the substrate to reflect the measurement results; exposure method comprising.
PCT/JP2005/005473 2004-03-25 2005-03-25 Exposure equipment, exposure method and device manufacturing method WO2005093792A1 (en)

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JP2006511515A JP4671051B2 (en) 2004-03-25 2005-03-25 Exposure apparatus and an exposure method, and device manufacturing method
US10/594,061 US20070201010A1 (en) 2004-03-25 2005-03-25 Exposure Apparatus, Exposure Method, And Device Manufacturing Method
CN 200580014657 CN1950929B (en) 2004-03-25 2005-03-25 Exposure equipment, exposure method and device manufacturing method
KR20067022068A KR101181683B1 (en) 2004-03-25 2005-03-25 Exposure equipment, exposure method and device manufacturing method
EP05721450A EP1737024A4 (en) 2004-03-25 2005-03-25 Exposure equipment, exposure method and device manufacturing method
US12/875,874 US20110001943A1 (en) 2004-03-25 2010-09-03 Exposure apparatus, exposure method, and device manufacturing method

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029829A1 (en) * 2005-09-09 2007-03-15 Nikon Corporation Exposure apparatus, exposure method, and device production method
JP2007251165A (en) * 2006-03-17 2007-09-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2011254089A (en) * 2004-12-20 2011-12-15 Asml Netherlands Bv Lithographic apparatus
JP5115859B2 (en) * 2006-02-21 2013-01-09 株式会社ニコン Pattern forming apparatus, exposure apparatus, exposure method, and device manufacturing method
JP2016224470A (en) * 2008-05-28 2016-12-28 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and method of operating apparatus
EP3267259A1 (en) * 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8194232B2 (en) 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
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US20110008734A1 (en) * 2009-06-19 2011-01-13 Nikon Corporation Exposure apparatus and device manufacturing method
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US8355114B2 (en) * 2009-06-19 2013-01-15 Nikon Corporation Exposure apparatus and device manufacturing method
US8472008B2 (en) 2009-06-19 2013-06-25 Nikon Corporation Movable body apparatus, exposure apparatus and device manufacturing method
TW201102765A (en) 2009-07-01 2011-01-16 Nikon Corp Grinding device, grinding method, exposure device and production method of a device
US20110085150A1 (en) 2009-09-30 2011-04-14 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
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US20110075120A1 (en) 2009-09-30 2011-03-31 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2013509692A (en) 2009-10-30 2013-03-14 株式会社ニコン Exposure apparatus and device manufacturing method
KR20130083901A (en) * 2010-07-20 2013-07-23 가부시키가이샤 니콘 Exposure method, exposure apparatus and cleaning method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684757A (en) * 1992-09-04 1994-03-25 Nikon Corp Projection aligner
JPH1187237A (en) * 1997-09-10 1999-03-30 Nikon Corp Alignment device
JPH11135400A (en) * 1997-10-31 1999-05-21 Nikon Corp Exposure system
JP2000164504A (en) * 1998-11-30 2000-06-16 Nikon Corp Stage device and aligner and positioning method using the stage device
JP2000283889A (en) * 1999-03-31 2000-10-13 Nikon Corp Inspection device and method of projection optical system, aligner, and manufacture of micro device
JP2002202221A (en) * 2000-12-28 2002-07-19 Nikon Corp Position detection method, position detector, optical characteristic measuring method, optical characteristic measuring device, exposure device, and device manufacturing method
JP2004061177A (en) * 2002-07-25 2004-02-26 Canon Inc Optical device and measuring method, and manufacturing method of semiconductor device
WO2005043607A1 (en) * 2003-10-31 2005-05-12 Nikon Corporation Exposure apparatus and device producing method
JP2005129914A (en) * 2003-10-02 2005-05-19 Nikon Corp Aligner and exposure method, and method for manufacturing device

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPH0139207B2 (en) * 1981-01-14 1989-08-18 Nikon Kk
JPS6349893B2 (en) * 1981-03-18 1988-10-06 Hitachi Ltd
US5243195A (en) * 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5424552A (en) * 1991-07-09 1995-06-13 Nikon Corporation Projection exposing apparatus
JP2753930B2 (en) * 1992-11-27 1998-05-20 キヤノン株式会社 Immersion-type projection exposure apparatus
US5448332A (en) * 1992-12-25 1995-09-05 Nikon Corporation Exposure method and apparatus
JP3412704B2 (en) * 1993-02-26 2003-06-03 株式会社ニコン Projection exposure method and apparatus, and an exposure apparatus
JPH08316124A (en) * 1995-05-19 1996-11-29 Hitachi Ltd Method and apparatus for projection exposing
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
DE69717975D1 (en) * 1996-12-24 2003-01-30 Asml Netherlands Bv In two directions balanced positioning device and lithographic device with such a positioning device
JPH1116816A (en) * 1997-06-25 1999-01-22 Nikon Corp Projection aligner, method for exposure with the device, and method for manufacturing circuit device using the device
KR20010033118A (en) * 1997-12-18 2001-04-25 오노 시게오 Stage device and exposure apparatus
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US6473161B2 (en) * 2000-06-02 2002-10-29 Asml Netherlands B.V. Lithographic projection apparatus, supporting assembly and device manufacturing method
CN100568101C (en) * 2002-11-12 2009-12-09 Asml荷兰有限公司 Lithographic apparatus and device manufacturing method
CN101424881B (en) * 2002-11-12 2011-11-30 Asml荷兰有限公司 Lithographic projection apparatus
TWI230837B (en) * 2002-12-16 2005-04-11 Asml Netherlands Bv Lithographic apparatus with alignment subsystem, device manufacturing method using alignment, and alignment structure
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI497565B (en) * 2003-09-29 2015-08-21 尼康股份有限公司 An exposure apparatus and an exposure method, and an element manufacturing method
SG148993A1 (en) * 2003-12-03 2009-01-29 Nikon Corp Exposure apparatus, exposure method, method for producing device, and optical part
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101227211B1 (en) * 2004-02-03 2013-01-28 가부시키가이샤 니콘 Exposure apparatus and method of producing device
KR101945638B1 (en) * 2004-02-04 2019-02-07 가부시키가이샤 니콘 Exposure apparatus, exposure method, and device producing method
SG132679A1 (en) * 2004-02-19 2007-06-28 Nikon Corp Exposure apparatus, exposure method, and device fabricating method
JP4572896B2 (en) * 2004-02-19 2010-11-04 株式会社ニコン Manufacturing method for an exposure apparatus and device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684757A (en) * 1992-09-04 1994-03-25 Nikon Corp Projection aligner
JPH1187237A (en) * 1997-09-10 1999-03-30 Nikon Corp Alignment device
JPH11135400A (en) * 1997-10-31 1999-05-21 Nikon Corp Exposure system
JP2000164504A (en) * 1998-11-30 2000-06-16 Nikon Corp Stage device and aligner and positioning method using the stage device
JP2000283889A (en) * 1999-03-31 2000-10-13 Nikon Corp Inspection device and method of projection optical system, aligner, and manufacture of micro device
JP2002202221A (en) * 2000-12-28 2002-07-19 Nikon Corp Position detection method, position detector, optical characteristic measuring method, optical characteristic measuring device, exposure device, and device manufacturing method
JP2004061177A (en) * 2002-07-25 2004-02-26 Canon Inc Optical device and measuring method, and manufacturing method of semiconductor device
JP2005129914A (en) * 2003-10-02 2005-05-19 Nikon Corp Aligner and exposure method, and method for manufacturing device
WO2005043607A1 (en) * 2003-10-31 2005-05-12 Nikon Corporation Exposure apparatus and device producing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1737024A4 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9116443B2 (en) 2004-12-20 2015-08-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9835960B2 (en) 2004-12-20 2017-12-05 Asml Netherlands B.V. Lithographic apparatus
US9417535B2 (en) 2004-12-20 2016-08-16 Asml Netherlands B.V. Lithographic apparatus
JP2011254089A (en) * 2004-12-20 2011-12-15 Asml Netherlands Bv Lithographic apparatus
US9329494B2 (en) 2004-12-20 2016-05-03 Asml Netherlands B.V. Lithographic apparatus
US10248035B2 (en) 2004-12-20 2019-04-02 Asml Netherlands B.V. Lithographic apparatus
US8780326B2 (en) 2005-09-09 2014-07-15 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP5055579B2 (en) * 2005-09-09 2012-10-24 株式会社ニコン Exposure apparatus, exposure method, and device manufacturing method
WO2007029829A1 (en) * 2005-09-09 2007-03-15 Nikon Corporation Exposure apparatus, exposure method, and device production method
JP5115859B2 (en) * 2006-02-21 2013-01-09 株式会社ニコン Pattern forming apparatus, exposure apparatus, exposure method, and device manufacturing method
EP3267258A1 (en) * 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
EP3267259A1 (en) * 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP4490984B2 (en) * 2006-03-17 2010-06-30 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and device manufacturing method
JP2007251165A (en) * 2006-03-17 2007-09-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2016224470A (en) * 2008-05-28 2016-12-28 エーエスエムエル ネザーランズ ビー.ブイ. Lithographic apparatus and method of operating apparatus

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CN1950929B (en) 2011-05-25
KR101181683B1 (en) 2012-09-19
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US20110001943A1 (en) 2011-01-06
EP1737024A4 (en) 2008-10-15

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