WO1999021230A1 - Composant a semiconducteur a effet de champ - Google Patents

Composant a semiconducteur a effet de champ Download PDF

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Publication number
WO1999021230A1
WO1999021230A1 PCT/DE1998/003001 DE9803001W WO9921230A1 WO 1999021230 A1 WO1999021230 A1 WO 1999021230A1 DE 9803001 W DE9803001 W DE 9803001W WO 9921230 A1 WO9921230 A1 WO 9921230A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
semiconductor component
gate
component according
electrical semiconductor
Prior art date
Application number
PCT/DE1998/003001
Other languages
German (de)
English (en)
Inventor
Wolfgang Keller
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO1999021230A1 publication Critical patent/WO1999021230A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular

Definitions

  • the invention relates to an electrical semiconductor component with electrodes that form the source and drain, and at least one gate electrode with a gate width.
  • the invention further relates to an electrical circuit which contains at least one electrical semiconductor component, the semiconductor component having electrodes which form source and drain and at least one gate electrode.
  • Such an electrical semiconductor component can be, for example, a field effect transistor with an insulating layer (OSFET / MISFET) or with a barrier layer (junction FET).
  • OSFET / MISFET insulating layer
  • junction FET barrier layer
  • the gate electrode serves as a control electrode, which controls the resistance in a current channel between the source and the drain.
  • the output signal is usually tapped at the drain.
  • a fourth connection is sometimes also present, for example to the semiconductor die, that is to say the substrate on which the current channel is located. This connection is called bulk.
  • Such a further connection is provided in particular in the case of integrated ones
  • Circuits in which several transistors are on one chip are arranged.
  • the designation of the components depends on the number of connections.
  • Semiconductor components with three connections (source, gate, drain) are used as triodes, semiconductor components with four connections (source, gate 1, gate 2, drain) as tetrodes and semiconductor components with five connections (source, gate 1, gate 2, gate 3, Drain) referred to as a pentode.
  • an additional connection to the bulk does not lead to a change in the name of the semiconductor component.
  • this object is achieved in that the gate electrode is curved at least in sections in the direction of an electrode, and in that the surface of the one electrode is smaller than half the product of the width of the one electrode and the gate width.
  • the invention therefore provides for one or more deliberately deformed gate electrodes to be used instead of the known straight-line gate electrodes.
  • This deformation is caused by a curvature.
  • Curvature in the direction of an electrode is referred to here if the gate electrode is convexly shaped at least in sections with respect to the one electrode.
  • Such curvature can be done in any way. In particular, the curvature can be approximated by a polygon.
  • One electrode can be formed by the source or the drain.
  • the invention also provides for the electrode to be designed in such a way that it has a deliberately smaller surface.
  • the benchmark for reducing the surface area of one electrode is the product of its width and the gate width.
  • the width is the smallest dimension of the one electrode within the Structure level in which it is located. In the case of a circular electrode, this is the diameter.
  • the term gate width here means the extension of the gate electrode perpendicular to the current direction in the gate channel. In the case of a circular " electrode, in which there is a radial current flow, and an annular gate electrode, this is the circumference of the gate electrode.
  • the electrical semiconductor component such that the surface of the one electrode is at most 35% of the product of the width of the one electrode and the gate width.
  • the invention further provides to build a generic electrical circuit so that it contains an electrical semiconductor component, which is characterized in that the gate electrode is curved at least in sections towards an electrode, and that the surface of one electrode is smaller than half of the product of the width of one electrode and the gate width.
  • a particularly low capacitance can be achieved in that the gate electrode is curved so much that the one
  • Electrode is at least partially surrounded by the gate electrode.
  • a capacitance that is both low and precisely determinable can be achieved in that the gate electrode has the shape of an arc at least in sections.
  • a "isolation structure below or above the free ends of the gate electrode is arranged.
  • Stray capacities can also be avoided if the gate electrode has a ring shape.
  • the one electrode To further reduce the capacitance between the one electrode and the gate electrode, it is furthermore expedient for the one electrode to have smaller surface dimensions than the gate electrode.
  • drain or the source is divided into a plurality of surface pieces, the surface pieces being connected to one another by conductor tracks. This results in an electrical parallel connection.
  • the semiconductor component is characterized in that the conductor tracks are arranged in a structural plane located below or above the drain or the source.
  • the one electrode can have any shape.
  • a particularly low capacitance between the one electrode and the gate electrode can expediently be achieved in that the one electrode Has point symmetry.
  • Such a point symmetry can advantageously be achieved in that the one electrode has a circular shape.
  • a capacitance which is both small and precisely defined can be achieved in that the one electrode has the shape of a polygon.
  • a polygon is understood here to mean a flat structure with at least three corners.
  • the one electrode is expedient for the one electrode to be arranged in the center of the gate electrode.
  • a further advantageous embodiment of the invention is characterized in that the one electrode is at least partially surrounded by the gate electrode and that the gate electrode is at least partially surrounded by another electrode.
  • the other electrode has a U-shape.
  • both the gate electrode and the source are arranged inside the drain, or that the gate electrode and the drain are arranged inside the source. These arrangements have the additional advantage that the influence of external interference fields is effectively shielded.
  • Another advantageous embodiment of the invention is characterized in that the one electrode has a shape complementary to the gate electrode.
  • the arrangements shown also achieve advantageous shielding from external electromagnetic fields. These arrangements have the additional advantage that a particularly small and precisely definable capacity is achieved at the same time.
  • the electrical semiconductor component In order to expand the possible uses of the electrical semiconductor component, it is advantageous for it to have at least two gate electrodes.
  • An undesirable mutual influence of the gate electrodes can advantageously be avoided by arranging the gate electrodes concentrically.
  • a preferred embodiment of the invention provides that one electrode is designed in such a way that it has a deliberately smaller area than the other electrode.
  • One electrode can be formed by the source or the drain.
  • a particularly advantageous embodiment of the semiconductor component according to the invention is characterized in that the surface of one electrode is at most 25% of the surface of the other electrode.
  • a particularly strong reduction in capacity can be achieved in that the surface of one electrode is at most 15% of the surface of the other electrode.
  • At least one electrode has the smallest possible width. It is even more advantageous if both electrodes have the smallest possible width.
  • An area of less than 10 ⁇ m is preferred
  • Fig.l is a plan view of a first embodiment of a semiconductor device according to the invention.
  • FIG. 3 shows a plan view of a further embodiment of a semiconductor component according to the invention.
  • the two semiconductor components shown in FIG. 1 are two field effect transistor triodes, which are connected to one another in parallel on a structure level not shown in the drawing.
  • the drain 20 lies in the center of the source 10 and the gate 30.
  • the distance from the drain edge to the center line of the gate 30 is denoted by d DG .
  • N k individual components must be connected in parallel.
  • N k of the required components applies: N> w G / w k .
  • the total drainage area is:
  • the total drain area A DG with the same total gate width is less than half the drain area A D1 of the linear structure shown below with reference to FIG. 2.
  • the inner radius of the source 10 is 2 r D , because the distance between the source 10 and the drain 20 is not greater than the radius of the drain 20. Since the source 10 has the same width as the drain 20, the outer radius of the source 10 : 4 r D.
  • the area ratio between the drain 20 and the source 10 is thus 1 to 12.
  • the component shown in FIG. 2 belongs to the prior art. It has a linear structure.
  • the gate electrode 130 is arranged between the drain 120 and the source 110.
  • the gate electrode 150 is located between the drain 120 and the source 140.
  • the total gate width w G is composed of the width w G / 2 of the individual gates.
  • the four quadrants A, B, C and D in FIG. 3 show top views of two different embodiments of the semiconductor component according to the invention, the quadrants A and B corresponding to a first embodiment and the quadrants C and D corresponding to a second embodiment.
  • Each of the four quadrants A, B, C, and D corresponds to a semiconductor component according to the invention.
  • a higher output power is achieved by connecting several semiconductor components in parallel.
  • andelt h it is field effect transistor tetrode.
  • the illustrated in quadrants A and B embodiment is located between the source 210 and drain 220, a flat extended, not shown power line channel, "in which two gate electrodes are arranged 230 and 240th
  • the connecting lines 260 and 270 leading to the gate electrodes 230 and 240 are located at a higher structural level of the semiconductor component.
  • the connecting lines 260 and 270 leading to the gate electrodes 330 and 340 are in turn located at a higher structural level of the semiconductor component.
  • connection of the gate electrodes 230, 240, 330 and 340 to the .Tlschluß ein 260 and 270 and the drains 220, 320 and the sources 210, 310 with the leads leading to them is via contact holes 380.
  • These contact holes are electrically conductive Material filled so that connections are possible through different structural levels.
  • the free ends of the gate electrodes 330 and 340 lie on an insulation layer 390.
  • Figs. 1 and 3 embodiments have been shown of f he indungswashen semiconductor component, on which an electrode is formed by the drain.
  • the one electrode it is also possible for the one electrode to be formed by the source.
  • Using the drain as the first electrode has the advantage that distortion or attenuation of the output signal can be avoided even further. It is generally particularly expedient that the output signal of the semiconductor component can be tapped off at one electrode.
  • the illustrated embodiments of the electrical semiconductor component according to the invention are field-effect transistor tetrodes.
  • Such field effect transistor tetrodes serve, for example, as amplifiers with variable gain in VHF and radio frequency receivers such as television receivers.
  • the high-frequency input signal is applied to the outer gate electrode 30.
  • a low frequency signal or a DC signal is applied to the internal gate electrode 40.
  • the semiconductor components according to the invention for mixing signals at different frequencies. It is expedient here that the signals to be mixed are each passed to a gate electrode.
  • the range of applications of the electrical semiconductor component according to the invention is not limited to such applications.
  • the invention can be used in the entire range of applications electrical semiconductor components are used. It is particularly expedient to use an electrical semiconductor component according to the invention in those fields of application in which there is a need to keep the capacitance of at least the source or the drain very small, or to achieve a precisely defined value of this capacitance.
  • the electrical semiconductor component according to the invention is therefore particularly suitable for amplifiers in the range of low, medium, high and highest frequencies. Circuit breaker applications are also possible.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention concerne un composant électrique à semiconducteur comportant des électrodes qui forment la source (210, 310) et le drain (220, 320), et au moins une électrode de grille (230, 240, 330, 340) avec une largeur de grille. Ce composant à semiconducteur se distingue en ce que l'électrode de grille (230, 240, 330, 340) est courbée au moins partiellement, en direction d'une électrode et en ce que la surface d'une électrode est inférieure à la moitié du produit de la largeur d'une électrode et de la largeur de grille. L'invention concerne en outre un circuit électrique qui présente au moins un composant électrique à semiconducteur comportant des électrodes qui forment la source (210, 310) et le drain (220, 320), et au moins une électrode de grille (230, 240, 330, 340) avec une largeur de grille. Ce circuit électrique se distingue en ce que, dans le composant à semiconducteur, l'électrode de grille (230, 240, 330, 340) est courbée au moins partiellement, en direction d'une électrode et en ce que la surface d'une électrode est inférieure à la moitié du produit de la largeur d'une électrode et de la largeur de grille.
PCT/DE1998/003001 1997-10-22 1998-10-12 Composant a semiconducteur a effet de champ WO1999021230A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19746619.2 1997-10-22
DE1997146619 DE19746619A1 (de) 1997-10-22 1997-10-22 Elektrisches Halbleiterbauelement

Publications (1)

Publication Number Publication Date
WO1999021230A1 true WO1999021230A1 (fr) 1999-04-29

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PCT/DE1998/003001 WO1999021230A1 (fr) 1997-10-22 1998-10-12 Composant a semiconducteur a effet de champ

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DE (1) DE19746619A1 (fr)
WO (1) WO1999021230A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1200327A (en) * 1966-09-19 1970-07-29 Matsushita Electronics Corp Semiconductor device
EP0161733A2 (fr) * 1984-05-04 1985-11-21 Integrated Logic Systems, Inc. Elément de cellule transistor à faible capacitance et matrice de transistors
DE3628309A1 (de) * 1985-08-21 1987-02-26 Mitsubishi Electric Corp Isolierter gate-feldeffekttransistor
JPS6281054A (ja) * 1985-10-04 1987-04-14 Nec Corp 半導体装置
JPH02250378A (ja) * 1989-03-24 1990-10-08 Hitachi Ltd 半導体素子
US5414283A (en) * 1993-11-19 1995-05-09 Ois Optical Imaging Systems, Inc. TFT with reduced parasitic capacitance

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1200327A (en) * 1966-09-19 1970-07-29 Matsushita Electronics Corp Semiconductor device
EP0161733A2 (fr) * 1984-05-04 1985-11-21 Integrated Logic Systems, Inc. Elément de cellule transistor à faible capacitance et matrice de transistors
DE3628309A1 (de) * 1985-08-21 1987-02-26 Mitsubishi Electric Corp Isolierter gate-feldeffekttransistor
JPS6281054A (ja) * 1985-10-04 1987-04-14 Nec Corp 半導体装置
JPH02250378A (ja) * 1989-03-24 1990-10-08 Hitachi Ltd 半導体素子
US5414283A (en) * 1993-11-19 1995-05-09 Ois Optical Imaging Systems, Inc. TFT with reduced parasitic capacitance

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 280 (E - 539) 10 September 1987 (1987-09-10) *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 576 (E - 1016) 21 December 1990 (1990-12-21) *
RAZAVI B ET AL: "DESIGN OF HIGH-SPEED, LOW-POWER FREQUENCY DIVIDERS AND PHASE -LOCKEDLOOPS IN DEEP SUBMICRON CMOS", 1 February 1995, IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 30, NR. 2, PAGE(S) 101 - 109, XP000496300 *

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DE19746619A1 (de) 1999-05-06

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