WO1999010435A1 - Heat-resistant, lowly dielectric high-molecular material, and films, substrates, electric components and heat-resistant resin moldings produced therefrom - Google Patents

Abstract

A heat-resistant, lowly dielectric high-molecular material comprising a thermoplastic resin having a multi-layer structure composed of prefereably a non-polar α-olefinic polymer segment chemically bonded to a vinyl aromatic copolymer segment, wherein a dispersed phase formed by one segment is finely dispersed in a continuous phase formed by another segment. It has an excellent heat resistance, a high strength, a low permittivity suitable for high-frequency electric insulating materials, and a low dielectric loss.

Description

 Description Heat-resistant low-dielectric polymer materials and films, substrates, electronic components, and heat-resistant resin molded products using the same

 The present invention relates to a novel heat-resistant low-dielectric polymer material, and a film, a substrate, an electronic component and a heat-resistant resin molded product using the same. More specifically, it has low dielectric constant, low dielectric loss tangent, high heat resistance up to high temperature range, excellent adhesion or adhesion to metal and metal foil, especially in high frequency band, injection molding, pressing The present invention relates to a low dielectric constant polymer material having a molding capability of molding, transfer molding, and extrusion molding. Further, the low dielectric constant polymer material can be formed into a film by itself, and the obtained film is thermally fused. And a substrate obtained by stacking. Background art

In recent years, with the rapid increase in communication information, there has been a strong demand for smaller, lighter, and faster communication devices, and low-dielectric insulating materials that can cope with such demands have been demanded. In particular, the frequency band of radio waves used in portable mobile communications such as car phones and digital cellular phones, and satellite communications is in the high-frequency band from mega to giga Hz. As a means of these communications, housings, substrates, and electronic devices are being miniaturized and densely mounted, etc., with the rapid development of communication devices used. To reduce the size and weight of telecommunications equipment compatible with high-frequency ranges such as the mega to giga-Hz band, we must develop an electrical insulating material that combines excellent high-frequency transmission characteristics with appropriate low dielectric properties. is necessary. _T the Enerugi losses in the transmission process is said to dielectric loss Sunawa Chi element circuit occurs This energy loss is not preferable because it is consumed as heat energy in the element circuit and released as heat. This energy loss is caused by the change in the electric field of the dipole caused by the dielectric polarization in the low frequency region, and is caused by the ionic polarization and the electronic polarization in the high frequency region. The ratio of the energy consumed in the dielectric per cycle of the alternating electric field to the energy stored in the dielectric is called the dielectric loss tangent and is expressed as tan δ. The dielectric loss is proportional to the product of the relative permittivity ε and the dielectric loss tangent of the material. Therefore, ta η δ increases with increasing frequency in the high frequency range. In addition, since the heat generation per unit area increases due to the high-density mounting of electronic elements, it is necessary to use a material having a small tan δ in order to reduce the dielectric loss of the insulating material as much as possible. By using a low-dielectric polymer material with low dielectric loss, heat generation due to dielectric loss and electric resistance is suppressed, and as a result, signal malfunctions are reduced. Materials are strongly desired. Materials having such electrical properties as being electrically insulating and having a low dielectric constant include thermoplastic resins such as polyolefin, vinyl chloride resin, and fluororesin, unsaturated polyester resins, polyimide resins, epoxy resins, and the like. Various thermosetting resins such as vinyl triazine resin (Βresin), crosslinkable polyphenylene oxide, and curable poly (phenylene ether) have been proposed.

However, when low dielectric constant materials are used for electronic components (elements), polyolefins such as polyethylene and polypropylene as in Japanese Patent Publication No. 52-31272 have covalent bonds such as C-C bonds. Since it has no large polar group and has excellent electrical resistance, it has excellent insulation resistance, but has the disadvantage of low heat resistance. For this reason, the electrical characteristics (dielectric loss, dielectric constant, etc.) in use at high temperatures deteriorate, and it cannot be said that it is suitable as an insulating film (layer) such as a capacitor. Furthermore, polyethylene-polypropylene is once formed as a film, and this is coated and adhered to a conductive material using an adhesive, but this method not only complicates the processing steps but also forms the film. There are also problems with coating formation, such as making it very difficult to reduce the thickness of the layer.

 Vinyl chloride resin has high insulation resistance, excellent chemical resistance and flame retardancy, but has the same drawback of poor heat resistance and large dielectric loss as polyolefin.

 Polymers containing fluorine atoms in the molecular chain, such as vinylidene fluoride resin, trifluoroethylene resin, and perfluoroethylene resin, have electrical properties (low dielectric constant and low dielectric loss), heat resistance, and chemical stability. Although it is excellent in formability, it has difficulty in forming workability such as obtaining a molded product or film by heat treatment like thermoplastic resin, film forming ability, and it is quite difficult to make a device. Cost. Furthermore, there is a disadvantage that the application field is limited due to low transparency. The low-dielectric general-purpose polymer materials described above all have an allowable maximum temperature of less than 130 ° C, so the heat-resistant category specified in JIS-C4003 as Class B for electrical equipment insulation materials is Class B. Below, the heat resistance is insufficient.

 On the other hand, resins having relatively good heat resistance include thermosetting resins such as epoxy resin, polyphenylene ether (PPE), unsaturated polyester resin, and phenol resin. Epoxy resin satisfies the required performance in insulation resistance, dielectric breakdown strength and heat resistance temperature as seen in JP-A-6-192392. However, the dielectric constant is relatively high at 3 or more, and satisfactory characteristics have not been obtained. It also has the drawback of poor thin film forming ability. Polyphenylene oxide (PPO) resin and polyfunctional cyanate ester resins, and a curable modified PP resin obtained by blending other resins with these resins, adding a radical polymerization initiator, and pre-reacting Although compositions are known, the decrease in dielectric constant has not reached a sufficiently satisfactory level. Further, for the purpose of improving epoxy resins having poor heat resistance, combinations of, for example, phenolic novolak resins and vinyltriazine resins have been studied, but they have a drawback that the mechanical properties of the film are significantly reduced.

Therefore, while maintaining the electrical characteristics, the above-mentioned problems, specifically, improvement of the heat processability, For the purpose of improving adhesion and adhesion to metal conductors (layers) such as copper, branched cyclo-ring amorphous fluoropolymers, copolymers of perfluoroethylene monomers and other monomers, and the like have been proposed. Although it satisfies the electrical properties such as dielectric constant and dielectric loss, heat resistance deteriorates due to the influence of the methylene chain present in the polymer main chain, and good adhesion to device substrates etc. is still not obtained. Not been.

 As a performance further required for a low dielectric constant material having excellent dielectric and insulation resistance as described above, since a soldering process is always included in the device fabrication process, heating at 260 ° C for at least 120 seconds is required. It must have heat resistance that can withstand it, and it must be excellent in chemical stability such as heat resistance, alkali resistance, etc., and moisture resistance and mechanical properties. Further limited, for example, only polyimide, polyethersulfone, polyphenylene sulfide, polysulfone, thermosetting polyphenylene ether (PPE), polyethylene terephthalate, etc. are known. These polymers have the ability to form a thin film, and have a certain degree of adhesion to the substrate. For example, in a method of manufacturing an insulating element film by spin coating, a dilute solution is prepared by dissolving the polymer in an organic solvent, and after spin coating, the solvent is evaporated to form an insulating film. Solvents such as dimethylacetoamide / N-methylpyrrolidone, which are good solvents, are polar solvents and high boiling solvents, and therefore have a low evaporation rate and partially remain in the insulating film. Also, it is difficult to control the surface smoothness, homogeneity, etc. when thinning. Epoxy-modified poly (phenylene ether) resin or poly (phenylene ether) resin also has poor workability and adhesiveness, and lacks reliability. In addition, since the viscosity of the polymer solution is relatively high, it is a fact that considerable technology is required to form a uniform and smooth film.

Disclosure of the invention

The object of the present invention is, firstly, to have heat resistance and good adhesion or adhesion to a metal conductor layer. An object of the present invention is to provide a low-dielectric polymer material which is favorable, has a thin film forming ability, has a low dielectric constant and a low dielectric loss, has excellent insulating properties, and further has excellent weather resistance and workability.

 Second, a film is formed by itself using this low dielectric constant polymer material, and has low dielectric properties, excellent insulation, and excellent workability such as heat resistance, weather resistance, and moldability. Thirdly, it is to provide a substrate obtained by laminating this film and having a low dielectric property, excellent insulation properties, and excellent workability such as heat resistance, weather resistance and moldability. . Fourth, to provide electronic components suitable for use in the high-frequency region obtained from the above low dielectric constant polymer materials.Fifth, to provide heat-resistant resin molded products with excellent heat resistance and moldability. It is to be.

 Such an object is achieved by the present invention described in the following (1) to (14).

 (1) A resin composition comprising one or more resins having a weight average absolute molecular weight of 100 or more, wherein the sum of the number of carbon atoms and hydrogen atoms of the composition is at least 99% And a heat-resistant low-dielectric polymer material in which some or all of the resin molecules have a chemical bond with each other.

 (2) The heat-resistant low-dielectric polymer material according to (1), wherein the chemical bond is at least one selected from cross-linking, block polymerization and graft polymerization.

 (3) The resin composition is a copolymer in which a non-polar α-olefin polymer segment and / or a non-polar conjugated gen polymer segment and a vinyl aromatic polymer segment are chemically bonded. (1) or (2) above, which is a thermoplastic resin exhibiting a multiphase structure in which the dispersed phase formed by one segment is finely dispersed in the continuous phase formed by the other segment. Heat resistant low dielectric polymer material.

(4) The heat-resistant low-dielectric polymer material according to (3) above, wherein the non-polar ο; —refined polymer segment and the vinyl aromatic polymer segment are copolymers chemically bonded to each other. (5) The heat-resistant low-dielectric polymer material according to (3) or (4), wherein the vinyl aromatic polymer segment is a vinyl aromatic copolymer segment containing a divinylbenzene monomer.

 (6) The heat-resistant low-dielectric polymer material according to (4) or (5), which is a copolymer chemically bonded by graft polymerization.

(7) A heat-resistant low dielectric polymer material obtained by adding a non-polar _α -olefin polymer containing a monomer of 4-methylpentene-11 to the resin composition according to any one of the above (1) to (6). .

 (8) The heat-resistant low-dielectric polymer material according to any one of (1) to (7) above, which is used in a high-frequency band of 1 MHz or more.

 (9) A film having a thickness of 50 / m or more using the heat-resistant low-dielectric polymer material according to any one of (1) to (8).

 (10) A substrate on which the film of (9) is laminated.

 (11) The film according to (9), which is used in a high-frequency band of 1 MHz or more.

(12) The substrate according to (10), which is used in a high-frequency band of 1 MHz or more.

 (13) An electronic component used in a high-frequency band of 1 MHz or more, using the heat-resistant low-dielectric polymer material according to any one of (1) to (8).

 (14) A heat-resistant resin molded product obtained by molding the heat-resistant low-dielectric polymer material according to any one of the above (1) to (8) into a predetermined shape. BRIEF DESCRIPTION OF THE FIGURES

 FIG. 1 is a TEM photograph of the graft copolymer of the present invention.

 FIG. 2 is a schematic configuration diagram illustrating a ring resonator used for evaluating the characteristics of a substrate.

FIG. 3 is a graph showing the relationship between the Q value and the frequency of the substrate. FIG. 4 is a schematic configuration diagram illustrating chip induction. BEST MODE FOR CARRYING OUT THE INVENTION

 Hereinafter, the present invention will be described in detail.

 The heat-resistant low-dielectric polymer material of the present invention is a resin composition comprising one or more resins having a weight-average absolute molecular weight of 100 or more, and comprises a carbon atom and a hydrogen atom. The total number of atoms is at least 99%, and some or all of the resin molecules are chemically bonded to each other. By using a resin composition having such a weight average absolute molecular weight, the strength, adhesion to metal, and heat resistance when used as a heat-resistant low-dielectric polymer material are sufficient. On the other hand, if the weight-average absolute molecular weight is less than 10 °, the mechanical properties, heat resistance, etc. become insufficient, which is not suitable. It is particularly preferably at least 300, and most preferably at least 500. The upper limit of the weight average absolute molecular weight at this time is not particularly limited, but is usually about 1,000,000.

 The reason why the sum of the number of atoms of carbon and hydrogen is set to 99% or more in the resin composition of the present invention is to make the existing chemical bond a non-polar bond, thereby providing heat resistance and low dielectric constant. The electric characteristics when used as a polymer material are sufficient. On the other hand, when the sum of the numbers of carbon and hydrogen atoms is less than 99%, especially when the number of atoms forming polar molecules such as oxygen atoms and nitrogen atoms is more than 1%, the electrical properties, In particular, the dielectric loss tangent is high, which is not suitable.

Specific examples of the resin constituting the polymer material include low-density polyethylene, ultra-low-density polyethylene, ultra-low-density polyethylene, high-density polyethylene, low-molecular-weight polyethylene, ultra-high-molecular-weight polyethylene, ethylene-propylene copolymer, Homo- or copolymers of non-polar α-olefins such as propylene, polybutene, poly 4-methylpentene, etc. [hereinafter also referred to as (co) polymers], butadiene, isoprene, pendugen, hexadiene, hexadiene, octadiene, Fenilbu (Co) polymer of conjugated monomer such as styrene, diphenylbutadiene, styrene, nucleus-substituted styrene, such as methylstyrene, dimethylstyrene, ethylstyrene, isopropylstyrene, chlorostyrene, α-substituted styrene, such as α Examples include (co) polymers of each monomer of carbon ring-containing vinyl such as methyl styrene, ethyl styrene, divinylbenzene, and vinylcyclohexane.

 In the above description, polymers of non-polar α-olefins, conjugated monomers, and carbon ring-containing vinyl monomers are mainly exemplified. And conjugated monomers, non-polar α-olefin and carbon ring-containing vinyl monomers. You may.

 Thus, a resin composition is composed of one or more of these polymers, that is, a resin, and a part or all of these resin molecules must be chemically bonded to each other. . Therefore, some may be in a mixed state. By having a chemical bond at least in part as described above, the strength, adhesion to metal, and heat resistance when used as a heat-resistant low-dielectric high-molecular material are sufficient. On the other hand, if it is a mere mixture and has no chemical bond, it is insufficient from the viewpoint of heat resistance and mechanical properties.

 The form of the chemical bond in the present invention is not particularly limited, and examples thereof include a crosslinked structure, a block structure, and a graft structure. A known method may be used to generate such a chemical bond. Preferred embodiments of the graft structure and the block structure will be described later. As a specific method for generating a crosslinked structure, crosslinking by heat is preferable, and the temperature at this time is preferably about 50 to 300 ° C. In addition, there are bridges by electron beam irradiation.

The presence or absence of a chemical bond according to the present invention can be confirmed by determining the degree of crosslinking and, in the case of a graft structure, the graft efficiency. In addition, a transmission electron microscope (T It can also be confirmed by EM) or scanning electron microscope (SEM). For example, in FIG. 1, R U_〇 ₂ stained ultra thin TEM photograph of the graph Bok copolymer detailing (graft polymer A of Example 9 described later) is shown below. According to this, the other polymer segment is dispersed in one polymer segment as fine particles of about 10 / xm or less, more specifically, 0.01 to 10 / xm. Understand. In contrast, a mere mixture (blend polymer) does not show compatibility between the two polymers, such as a graft copolymer, and the dispersed particles have a large particle size.

 The resin composition of the present invention is a copolymer in which a non-polar α-olefin polymer segment and a vinyl aromatic copolymer segment are chemically bonded, and is formed by one segment. A preferable example is a thermoplastic resin having a multiphase structure in which the dispersed phase is finely dispersed in a continuous phase formed from the other segment.

 The non-polar α-olefin polymer, which is one of the segments in the thermoplastic resin having the specific multiphase structure as described above, is a non-polar polymer obtained by high-pressure radical polymerization, medium-low pressure ion polymerization, or the like. It must be a homopolymer of a refining monomer or a copolymer of two or more non-polar α-refining monomers. Copolymers with polar vinyl monomers are unsuitable because of their high dielectric loss tangent. Examples of the nonpolar α-olefin monomer of the above polymer include ethylene, propylene, butene-11, hexene-1, octene-1,4-methylpentene-1. Among them, ethylene, propylene, butene— 1,4-methylpentene is preferred because the dielectric constant of the obtained non-polar olefin polymer is low.

Specific examples of the above-mentioned non-polar α-polyolefin (co) polymer include low-density polyethylene, ultra-low-density polyethylene, ultra-low-density polyethylene, high-density polyethylene, low-molecular-weight polyethylene, ultra-high-molecular-weight polyethylene, and ethylene-propylene. Copolymers, polypropylene, polybutene, poly 4-methylpentene, and the like. Also, These non-polar α-olefin refin (co) polymers can be used alone or in combination of two or more.

 The preferred molecular weight of such a non-polar polyolefin (co) polymer is 100,000 or more in absolute weight. The upper limit is not particularly limited, but is about 1,000,000.

 On the other hand, the vinyl aromatic polymer, which is one of the segments in the thermoplastic resin exhibiting a specific multiphase structure, is a non-polar polymer, specifically, styrene, styrene with a nuclear substitution, For example, methyl styrene, dimethyl styrene, ethyl styrene, isopropyl styrene, chloro styrene, 0; -substituted styrene, for example, α-methyl styrene, α-ethyl styrene, o_, m—, p-divinylbenzene (preferably m—, p— It is a (co) polymer of each monomer such as divinylbenzene, particularly preferably p-divinylbenzene. The reason why the non-polar one is used is that if a monomer having a polar functional group is introduced by copolymerization, the dielectric loss tangent becomes high, which is not suitable. The vinyl aromatic polymer may be used alone or in combination of two or more.

 Among them, the vinyl aromatic copolymer is preferably a vinyl aromatic copolymer containing a divinylbenzene monomer from the viewpoint of improving heat resistance. Specific examples of the vinyl aromatic copolymer containing divinylbenzene include styrene, a nucleus-substituted styrene such as methylstyrene, dimethylstyrene, ethylstyrene, isopropylstyrene, chlorostyrene, and α-substituted styrene such as α-methylstyrene. And copolymers of monomers such as α-ethyl styrene and divinylbenzene.

The ratio of the divinylbenzene monomer to the other vinyl aromatic monomer as described above is not particularly limited, but in order to satisfy the solder heat resistance, the ratio of the divinylbenzene monomer is reduced. It is preferable that the content is 1% by weight or more. The divinylbenzene monomer may be 100% by weight, but the upper limit is 90% by weight due to synthesis problems. Is preferred.

 It is preferable that the molecular weight of the vinyl aromatic polymer as one of the segments is 100 or more in terms of weight average absolute molecular weight. The upper limit is not particularly limited, but is about 1,000,000.

 The thermoplastic resin having a specific multiphase structure according to the present invention contains 5 to 95% by weight, preferably 40 to 90% by weight, and most preferably 50 to 80% by weight of the olefin polymer segment. It becomes. Therefore, the content of the vinyl polymer segment is 95 to 5% by weight, preferably 60 to 10% by weight, and most preferably 50 to 20% by weight. If the number of the olefin polymer segments is small, the molded product becomes brittle, which is not preferable. Further, when the number of the olefin polymer segments is large, the adhesion to the metal is low, which is not preferable.

 The weight average absolute molecular weight of such a thermoplastic resin is 1000 or more. The upper limit is not particularly limited, but is about 1,000,000 from the viewpoint of moldability.

 Specific examples of the copolymer having a structure in which the olefin polymer segment and the vinyl polymer segment are chemically bonded include a block copolymer and a graft copolymer. Above all, a graft copolymer is particularly preferred because of ease of production. Note that these copolymers may include an olefin polymer or a vinyl polymer without departing from the characteristics of the block copolymer, the graft copolymer, and the like.

 The method for producing the thermoplastic resin having a specific multiphase structure of the present invention may be any method such as a chain transfer method and an ionizing radiation irradiation method which are generally well-known as a grafting method. Is based on the method shown below. This is because the grafting efficiency is high and secondary aggregation due to heat does not occur, so that the expression of performance is more effective and the manufacturing method is simple.

Hereinafter, the graft copolymer which is a thermoplastic resin showing a specific multiphase structure of the present invention The manufacturing method will be specifically described in detail. That is, 100 parts by weight of the olefin polymer is suspended in water, and separately added to 5 to 400 parts by weight of a vinyl aromatic monomer, the following general formula:

One to one or a mixture of two or more of the radically polymerizable organic peroxides represented by (1) or (2) is used in an amount of 0.1 to 10 parts by weight based on 100 parts by weight of the vinyl monomer. And a radical polymerization initiator having a decomposition temperature of 40 to 90 ° C. for obtaining a half life of 10 hours in a total of 100 parts by weight of a vinyl monomer and a radical polymerizable organic peroxide. 0.01 to 5 parts by weight of a solution in which the radical polymerization initiator is substantially decomposed

 Two

The vinyl monomer, the radical polymerizable organic peroxide and the radical polymerization initiator are impregnated into the olefin-based polymer, and the temperature of the aqueous suspension is increased. And a radical polymerizable organic peroxide are copolymerized in an olefin copolymer to obtain a graft precursor.

 Next, the graft copolymer of the present invention can be obtained by kneading the grafting precursor under melting at 100 to 300 ° C. At this time, a graphitic copolymer can be obtained by separately mixing an olefin polymer or a vinyl polymer with the grafting precursor and kneading the mixture under melting. Most preferred is a graft copolymer obtained by kneading a grafting precursor. General formula (1)

In the general formula (1), R, represents a hydrogen atom or an alkyl group having 1 to 2 carbon atoms, R ", represents a hydrogen atom or a methyl group, and R :, and R., respectively represent 1 to 4 carbon atoms. R ₅ represents an alkyl group having 1 to 12 carbon atoms, a phenyl group, or an alkyl-substituted alkyl group. And represents a phenyl group or a cycloalkyl group having 3 to 12 carbon atoms. ir is 1 or 2.

 General formula (2)

CH ₂ = C-CH ₂ — 0— (CH ₂ —— CH one) _m2 — C—O— O— C— R ₁₀ R6 R ₇ 〇 R _Q

In the general formula (2), R _fi represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, R ₇ represents a hydrogen atom or a methyl group, and R ₈ and R ₉ each represent an alkyl group having 1 to 4 carbon atoms. R _{1 (>} represents an alkyl group having 1 to 12 carbon atoms, a phenyl group, an alkyl-substituted phenyl group, or a cycloalkyl group having 3 to 12 carbon atoms. M ₂ is 0, 1 or 2 is there.

Examples of the radically polymerizable organic peroxide represented by the general formula (1) include t-butyl benzoylacryloyloxetyl carbonate; t-amylperoxy acryloyloxetyl carbonate; —T; t—Hexylperoxyacryloyl mouth quichetyl carbonate; 1,1,3,3-tetramethylbutyl peroxyacyl royloxetyl carbonate; cumylperoxya creroyloxie Circa-carbonate; p-Isopropircumylperoxyacryloyloxyshetyl carbonate; t-Butylperoxime acryloyloxyshetyl carbonate; t-milperoxymethacryloyloxyshetyl carbonate; t —Hexylperoxy methacryloyloxetyl carbonate; 1,1,3,3-tetramethylbutyroperoxymethac Roy Loki Chez chill carbonate; cumyl O Kishime Yuku Leroy Loki Chez chill carbonate; p-isopropenyl Bilk mill peroxide O carboxymethyl methacryloyloxy Loki Chez chill carbonate; t-butyl peroxide O Kishime evening methacryloyl Loki Chez Ji Lecarbonebonate; t-amylperoxyacryloyl mouth chethetoxystil carbonate; t-hexylperoxyacryloyl mouth chethetoxystil carbonate; 1,1,3,3-tetramethylbutyl Peroxyacryloyloxyethyxetyl carbonate; cumylperoxyacryloyl octylhetoxycarbonate; 1-butylperoxymethacryloy-mouth chelette-kistilka carbonate; t-amylperoxymethacryloy-mouth chethetoxystilka-bonate; t-hexylperoxymethacryloy-mouth kisshetoxyshercarbonate 1,1, 3,3-tetramethylbutylperoxymethacryloyloxyethoxysiloxane carbonate; Cumyl peroxy methacryloyloxy ethoxyxyl carbonate carbonate; t-butyl peroxy acryloyloxy isopropyl carbonate; t-amyl peroxy acryloyloxy isopropyl carbonate; t—hexyl peroxy Acryloyloxyisopropyl carbonate; 1,1,3,3-tetramethylbutylperoxyacryloyl mouth xyisopropyl carbonate; cumylperoxyacryloyloxyisopropyl carbonate; p-isopropyl L-cumyl peroxy acryloyloxy isopropyl carbonate; t-butyl peroxy methacryloyloxy isopropyl carbonate; t-amyl benzoyl methacryloyloxy isopropyl carbonate; 1,1,3,3-tetramethylbutyl peroxymethacryloyloxyisopropyl carbonate; cumylperoxime cryloyloxyisopropyl carbonate; p psoprovir cumylperoxysimate Cryloyloxyisopropyl carbonate and the like can be exemplified. Further, compounds represented by the general formula (2) include t-butylperoxyarylcarbonate; t-amylperoxyaryl force-bonnet; t-hexylperyl. 1,1,3,3-tetramethylbutylperoxyarylcarbonate; p-menthaneperoxyarylcarbonate; cumylbenzyloxyarylcarbonate; t-butylperoxymethallylcarbonate; t T-hexylperoxymethallyl carbonate; 1,1,3,3-tetramethylbutylbenzyloxymethallyl carbonate; p-menthamperoxymethallyl carbonate; cumylbell Oxymethalyl ruperoxyaryloxyshetyl carbonate; t-hexylperoxyaryloxyshetyl carbonate; t-butylperoxymetalaryloxyshetyl carbonate; t-amylperoxymethyloxylyl carbonate; t-hexyl belo Tyl butyl carbonate; t-butyl peroxyaryloxy isop Mouth pill carbonate; t-amyl peroxyaryloxy isopropyl force-bonnet; t-hexyl peroxyaryloxy isopropyl carbonate; Peroxymetalaryloxyisopropyl carbonate; t-amylperoxymetallic xyisopropyl carbonate; t-hexylperoxymethyl xyxopropyl carbonate; and the like.

 Among them, preferred are t-butyl peroxyacryloyloxyshetyl carbonate; t-butyl peroxime acryloyloxyshetyl carbonate; t-butyl peroxyaryl carbonate; t-butyl peroxylime carbonate Taryl carbonate.

 The graft efficiency of the graft copolymer thus obtained is 20 to 100% by weight. The grafting efficiency can be determined from the ratio of the ungrafted polymer after solvent extraction.

The thermoplastic resin having a specific multiphase structure according to the present invention includes a graft copolymer of the above-mentioned non-polar α-olefin polymer segment and a vinyl aromatic polymer segment. Although a coalescence is preferable, in such a graft copolymer, a nonpolar conjugated polymer segment may be used instead of, or in addition to, the non-polar conjugated polymer segment. . As the nonpolar conjugated gen-based polymer, those described above can be used, and they may be used alone or in combination of two or more.

 The non-polar α-olefin polymer in the above graft copolymer may contain a co-gen monomer, and the non-polar conjugated polymer may contain a single monomer of α-olefin. The body may be included.

 Further, in the present invention, the obtained graft copolymer can be further crosslinked using divinylbenzene or the like. Particularly, a graphitic copolymer containing no divinylbenzene monomer is preferable from the viewpoint of improving heat resistance.

 On the other hand, the thermoplastic resin having a specific multiphase structure of the present invention may be a block copolymer, and the block copolymer may be at least one polymer of a vinyl aromatic monomer, A block copolymer containing one polymer of a conjugated gen can be mentioned, and it may be a linear type or a radial type, that is, a type in which a hard segment and a soft segment are radially bonded. Further, the polymer containing a co-gen may be a random copolymer with a small amount of a vinyl aromatic monomer, and is a so-called tapered block copolymer, that is, a vinyl aromatic unit in one block. The amount of the monomer may be gradually increased.

The structure of the block copolymer is not particularly limited, and may be any of (Α-Β) _η- type, (Α-Β) _η- Α-type, or (A, B) _n- C type. In the formula, A represents a polymer of a vinyl aromatic monomer, B represents a polymer of a conjugated gen, C represents a residue of a coupling agent, and n represents an integer of 1 or more. In addition, in this block copolymer, it is also possible to use a block copolymer in which the conjugated gen moiety is hydrogenated.

In such a block copolymer, the non-polar conjugated Alternatively or additionally, the above-mentioned non-polar α-olefin polymer may be used, and the non-polar conjugated diene polymer may contain an α-olefin monomer, The non-polar α-olefin olefin polymer may contain a conjugated diene monomer. The ratio of each segment in the block copolymer and the preferred embodiment are the same as those of the graft copolymer.

 In order to improve heat resistance, the resin composition of the present invention, preferably a thermoplastic resin having a specific multiphase structure (particularly preferably a graft copolymer) is used in order to improve heat resistance. It is preferred to add a non-polar α-refined polymer containing a polymer. In the present invention, a non-polar α-olefin polymer containing a monomer of 4-methylpentene-11 may be contained in the resin composition without a chemical bond in some cases. In such a case, the addition is not necessarily required. However, it may be further added to obtain predetermined characteristics.

 The proportion of 4-methylpentene-11 monomer in such a non-polar α-olefin copolymer containing 4-methylpentene-11 monomer is preferably 50% by weight or more. In addition, such a non-polar α-olefin-based copolymer may include a conjugated diene monomer.

 In particular, non-polar α-methyl olefin copolymers containing 4-methylpentene-1 monomer include poly-4-methylpentene-11, which is a homopolymer of 4-methylpentene-1 monomer. Preferably, there is.

 Poly 4-methyl pentene-1 is crystalline poly 4-methyl pentene-1 and is isotactic poly 4 obtained by polymerizing 4-methyl pentene-1 which is a dimer of propylene with a Ziegler-Natta catalyst or the like. -Methylpentene-1 is preferred.

The ratio of poly 4-methylpentene-1 to a thermoplastic resin exhibiting a specific multiphase structure is not particularly limited, but in order to satisfy heat resistance and adhesion to metals, poly 4-methyl Preferably, the ratio of chillpentene-1 is 10 to 90% by weight. If the ratio of poly (4-methylpentene) -11 is small, the solder heat resistance tends to be insufficient. Also, when the proportion of poly (4-methylpentene) -11 increases, the adhesion to metal tends to be insufficient. Instead of poly-4-methylpentene-1, the amount of addition when the copolymer is used may be based on this.

 The softening point of the resin composition of the present invention (including those to which a non-polar a-olefin polymer containing a monomer of 4-methylpentene-1 is added) is 200 to 260 ° C, Sufficient solder heat resistance can be obtained by appropriately selecting and using.

The heat-resistant low-dielectric polymer material of the present invention can be obtained by, for example, a method of molding a resin material composed of the resin composition into a desired shape such as a thin film (film) by hot pressing or the like. In addition, it can be obtained by a method that melts and mixes with other thermoplastic resin with a shearing force, for example, a roll mixer, a Banbury mixer, a kneader, a single-screw or twin-screw extruder, etc., and forms it into a desired shape. Can be.

 The resin material of the present invention can be used in various forms, such as a film or a bulk-shaped molded article having a predetermined shape, and a film-shaped lamination. Therefore, various substrates for high-frequency electronic devices and electronic components (resonators, filters, capacitors, inductors, antennas, etc.), filters as chip components (for example, C filters that are multilayer substrates) and resonators ( For example, a support plate for a triplate-type resonator) or a dielectric resonator, as well as a housing for various substrates or electronic components (for example, an antenna rod housing), a casing, or an electronic component or its housing / casing. be able to.

Substrates are expected to be used as substitutes for conventional glass epoxy substrates, and specific examples include on-board components mounting boards and Cu-clad laminates. Furthermore, it can also be used for circuit-embedded substrates and antenna substrates (such as patch antennas). It also requires heat treatment and is for high frequency bands of 10 O MH'z or more, but it is used for CPU on-board. It can also be used for a single substrate.

 For example, a multi-layer substrate can be obtained by laminating a metal conductor layer, which is a metal conductor film of copper or the like, between the films and / or the outermost layer and heat-sealing them. Also in this case, a film having good adhesion to the metal conductor film can be obtained. In this case, a film having a thickness of 50 zm or more can be obtained by molding or the like, and for such a purpose, the thickness is set to 100 to 100 x m. In other words, it includes the thickness of what can be called a substrate. The thickness of the copper foil preferably used as the metal conductor film is 18 to 35 m. The thickness of the entire substrate, including the laminated type, is usually 0.1 to 1.6i. However, depending on the case, the thickness may be larger than this, and the thickness may be about 10 Oimn.

 When the metal conductor layer is formed in a pattern, the metal conductor film may be patterned into a predetermined shape and then adhered. However, when the metal conductor film and the electrical insulating film are brought into close contact with each other by lamination, the outermost metal conductor layer may be patterned and then adhered, or may be patterned after being adhered and removed by etching. Good.

 Further, the metal conductor layer may be formed by a vacuum evaporation method or the like.

Not only the resin material in the above, the silica powder used in the rigid substrate or the like conventionally as a reinforcing filler, an alumina powder, precipitated barium (B a S_〇 ₄₎ powder or the like, the thermal conductivity of control, expansion For the purpose of controlling the coefficient, adhering copper or the like by adhesion, improving the adhesion, and reducing the cost, it is preferable to use the compound within a range that does not impair the low dielectric property (low dielectric constant, low dielectric loss tangent). The reinforcing filler can be used alone or in combination.

The content of the resin material in the reinforcing filler-containing film is suitably from 10 to 70% by weight. As a result, a film or substrate having sufficient strength, low dielectric properties, and heat resistance can be obtained. Such a content is determined when laminating films or laminating substrates. In this case, the resin paste may be realized by maintaining an amount (10% by weight or more) at which the resin material, that is, the resin material itself, can be thermally fused.

 Examples of the molding method for forming the resin material of the present invention into a predetermined shape include those already described, and include a molding method, a compression method, an extrusion method, and the like. What is necessary is just to select the method which can be formed at low cost according to the intended use of the material.

 The heat-resistant low-dielectric polymer material composed of the resin material of the present invention is preferably used in a high frequency band of 1 MHz or more.

 In the electrical performance of the heat-resistant low-dielectric polymer material of the present invention, the dielectric constant (ε) is 1 or more, particularly in a frequency band of 60 MHz or more, particularly in a high frequency band of 60 MHz to 10 GHz. In particular, it is possible to obtain a low-dielectric electrical insulating material having a dielectric loss tangent (t an <5) of 0.0 to 3.0, usually having a dielectric loss tangent (t an <5) of not more than 0.001 to 0.01. It is possible to improve the strength of the substrate, to reduce the expansion coefficient and to improve the thermal conductivity compared to the low-dielectric electrically insulating substrate itself by using a reinforcing filler-containing electric insulating substrate that can be used as an electric element. Can be.

The insulation resistivity of the polymer material of the present invention is 2 to 5 × 10 ¹⁴ Qcm or more as a volume resistivity in a normal state. In addition, the dielectric breakdown strength is strong, exhibiting excellent characteristics of 15 KV / mni or more, especially 18-30 KV thigh.

 Further, the polymer material of the present invention has excellent heat resistance and can withstand the heating temperature at the time of soldering. Therefore, it is preferably used not only for substrates and electronic components, but also for housing and packaging that requires such processing. Example

 Hereinafter, the present invention will be described in more detail with reference to examples.

(Example 1) Polyethylene “G401” l OOO g (trade name, manufactured by Nippon Polyolefin Co., Ltd.) was blended with 10 g of Park Mill D (trade name, manufactured by NOF Corporation), and the cylinder temperature was set to 140 ° C. The mixture was supplied to a coaxial twin-screw extruder having a screw diameter of 30 mm, extruded, and granulated to obtain a thermocrosslinkable polyethylene resin. The molecular weight of polyethylene was determined by measuring the weight average absolute molecular weight using high temperature GPC (manufactured by Waters Corporation). The contents of carbon and hydrogen in this resin were determined by elemental analysis.

 The resin particles were hot-pressed at 220 ° C. by a hot press molding machine (manufactured by Kamishima Kikai Co., Ltd.) to produce a 1 Ocm × 1 Ocm × 0.1 cm test piece of an electrically insulating material. In addition, 13 min x 65 x 6 mm test pieces were prepared as Izod impact test pieces and solder heat resistance test pieces using an injection molding machine. The following measurements were performed using the obtained test pieces, and the volume resistivity, dielectric strength, dielectric constant, dielectric loss tangent, solder heat resistance, Izod impact strength, and adhesion to metal were evaluated. The water absorption was measured using the obtained resin pellets. In addition, the polyethylene resin molded and thermally cross-linked with a hot press was ground and heated in xylene, and the degree of cross-linking was confirmed from its solubility. The test method is shown below. Insulation resistance test (Volume resistivity); J I S K 691 1 (Test voltage 500 V) Dielectric breakdown test (Insulation breakdown strength); J I S C 21 10

 Dielectric constant test; Conforms to JIS L 1094 B method

 Dielectric loss tangent; according to ASTM D150

 Solder heat resistance: 200 ° C, 230t: The test piece was immersed in the solder heated to 260 ° C for 2 minutes, and the degree of deformation was observed.

Izod impact strength (notched) (. In the table, marked with Izod also unit is ^{kg · cmZcm 2.); JISK} 71 10

Adhesion to metal; thin when lightly rubbed with cloth after vacuum deposition of aluminum on test specimen The adhesion of the membrane was examined.

 Water absorption; according to ASTM D570

 Degree of crosslinking: 1 g of the crushed resin was placed in 70 ml of xylene, heated to 120 ° C. while refluxing, and stirred for 10 minutes. Thereafter, the solubility of the resin was observed.

 Moldability: The moldability when preparing an Izod impact test specimen with an injection molding machine, the moldability with a press machine, and the moldability when forming a film by extrusion molding were evaluated.

 Table 1 shows the results of each test. The dielectric constant in Table 1 indicates "the capacitance of the test piece as a dielectric in the case of no vacuum". In addition, the solder heat resistance indicates “〇 is not deformed”, “deformation is weak”, and “X is largely deformed”. In addition, the adhesiveness to metal indicates that “〇 is good”, “△ part is peeled”, and “X is whole peeling”.

 (Examples 2 to 4)

 Bolylene having a weight average absolute molecular weight of 1000, 3000, and 5000 was melt-blended with Parkmill D in the same manner as in Example 1, and the obtained resin particles were molded in the same manner as in Example 1 and subjected to each test. . The results are shown in Table 1.

 (Example 5)

Polypropylene “Jalloy 150 G” (trade name, manufactured by Nippon Polyolefin Co., Ltd.) 1000 g of divinylbenzene and 0.5 g of Park Mill D (trade name, manufactured by Nippon Oil & Fats Co., Ltd.) are added. The mixture was fed to a coaxial twin-screw extruder having a screw diameter of 3 Omin set at a temperature of 170 ° C., followed by extrusion and granulation to obtain a thermo-crosslinkable polypropylene resin. This resin was molded in the same manner as in Example 1, and each evaluation was performed. The results are shown in Table 1. Example 1 2 3 4 5 Resin PE Ρ Ε Ρ Ε Ρ Ε Ρ Ρ

Carbon and hydrogen atoms

 (%〉 99> 99> 99> 99> 99 molecular weight

 (Mw) 171000 1000 3000 5000 300000 Volume resistivity

 (XI 0 "* Q-cm) 3.0 3, η ·? Η • χ η Breakdown strength

 (KV / mm) 20 20 22 22 20 Dielectric constant 1GHz 2.10 2.06 2.08 2.10 2.10

 2GHz 2.12

5GHz 2.08 2.08 2.06 2.08 2.25

10GHz 2.25 Words Hideden Masa 捽 1GHz 2.40 2.38 2.33 2.30 0.96

(X10— ^{: i} ) 2GHz 0.16

 5GHz 1.53 2.72 2.20 2.21 0.23

10GHz 0.29

200 ° C Column Δ 〇 耐熱 Soldering heat resistance 230 Δ X Δ 〇 C

 260 at X X X X Δ Eye ', Cut impact value

(Kg-cm / cm ') Not destroyed Not destroyed Not destroyed Not destroyed 9 Adhesion to metal mm △ Δ Δ △ Water absorption (%) <0.03 <0.03 <0.03 <0.03 <0.03 Formability Good Good Good Good Good Good Degree of crosslinking (solubility) Insoluble Insoluble Insoluble Insoluble Insoluble (Examples 6 and 7)

 Polyethylene “G401” (trade name, manufactured by Nippon Polyolefin Co., Ltd.), Polystyrene “Dialex HF 77” (trade name, manufactured by Mitsubishi Monsanto Co., Ltd.), and divinylbenzene 70: 29: 1 and 50: The mixture was melt-kneaded at a ratio of 49: 1 (% by weight). The obtained resin was molded in the same manner as in Example 1, and each evaluation was performed. The results are shown in Table 2.

 (Example 8)

In a 5-liter stainless steel autoclave, 2000 g of pure water was added, and 2.5 g of polyvinyl alcohol was dissolved as a suspending agent. Into this, 990 g of styrene monomer, 10 g of divinylbenzene, and 5 g of benzoyl peroxide as a polymerization initiator were added and stirred. Then, the autoclave was heated to 80 to 85 ° C and maintained at that temperature for 7 hours to complete the polymerization. After filtration, the polymer was washed with water and dried to obtain a styrenedivinylbenzene copolymer. This resin was molded in the same manner as in Example 1, and each evaluation was performed. The results are shown in Table 2.

Table 2

 Example 6 7 8 Resin PE / PS PE / PS St / DVB

 / DVB / DVB

 (70:29 (50:49 (99: 1)

.1)-t

Carbon and hydrogen atoms

¾ jtifrt τ) \ ΐ non-π U

(o /

Molecular weight 171000/171000 /

 (Mw) 146000 146000 Unmeasurable Volume resistivity

(X10 ' ^s Ω-cm) 3.0 3.0 3.0 Breakdown strength

 (KV / 20 20 22 Dielectric constant 1GHz 2.37 2.44 2.59

 2GHz 2.36 2.41 2.66

5GHz 2.33 2.43 2.58

10GHz 2.22 1.35 2.44 Electric tangent 1GHz 0.53 0.60 0.45

(Χ1 (Γ ' ^Ί ) 2GHz 0.57 0.59 0.50

 5GHz 0.62 0.66 0.58

10GHz 0.71 0.68 0.63

At 200 〇 〇 〇 Solder heat resistance 230 ^ 〇 △ 〇

 260 "C △ Δ 〇 Eye impact

(Kg-cm / cni-) 1 2 8 1 Adhesion to metal 〇 〇 〇 Water absorption (%) <0.03 Cr 0.03 <0.03 Formability Good Good Good Multiplicity (solubility) Insoluble Insoluble Insoluble (Example 9)

 In a 5-liter stainless steel autoclave, 250 g of pure water was added, and 2.5 g of polyvinyl alcohol was dissolved as a suspending agent. Into this, 700 g of polypropylene “J-alloy 150 G” (trade name, manufactured by Nippon Polyolefin Co., Ltd.) was added as a olefin polymer, and stirred and dispersed. Separately, 1.5 g of benzoylperoxide as a radical polymerization initiator, 9 g of t-butylperoxymethacryloyloxetyl carbonate as a radical polymerizable organic peroxide, and a vinyl aromatic monomer Was dissolved in 300 g of styrene, and this solution was charged and stirred in the autoclave. Next, the autoclave was heated to 60 to 65 ° C and stirred for 2 hours to impregnate the polypropylene with a vinyl monomer containing a radical polymerization initiator and a radically polymerizable organic peroxide. . Next, the temperature was raised to 80 to 85 ° C., and the temperature was maintained for 7 hours to complete the polymerization. After filtration, the polymer was washed with water and dried to obtain a grafting precursor (a).

 Next, the grafting precursor (a) is extruded at 200 ° C. with a Labo Plastomill single screw extruder (manufactured by Toyo Seiki Seisaku-sho, Ltd.), and the grafting reaction is carried out to obtain the graft copolymer (A). Obtained.

 When this graft copolymer (A) was analyzed by pyrolysis gas chromatography, the weight ratio of polypropylene: styrene was 70:30.

 At this time, the graft efficiency of the styrene polymer segment was 50.1% by weight. The grafting efficiency was calculated by extracting a non-grafted styrene polymer with ethyl acetate using a Soxhlet extractor and calculating the ratio. The thermoplastic resin obtained in Example 9 was molded in the same manner as in Example 1, and each test was performed. Table 3 shows the results.

 (Example 10 to: 18)

(J) was obtained from the graft copolymer (B) in the same manner as in Example 9. Graph Tables 3 and 4 show the charged composition of the polymer and the results of composition analysis by pyrolysis gas chromatography. Tables 3 and 4 also show the results of each test. Abbreviations in the table indicate the following.

 PP: Polypropylene [] Alloy 150〇 (trade name, manufactured by Nippon Polyolefin Co., Ltd.)

 PE: Polyethylene “G401” (trade name, manufactured by Nippon Polyolefin Co., Ltd.)

St: Styrene

 DMS: dimethyl styrene

MS t: Methylstyrene

Table 3

Table 4

(Example 19)

 In a 5-liter stainless steel autoclave, 250 g of pure water was added, and 2.5 g of polyvinyl alcohol was dissolved as a suspending agent. 800 g of polypropylene “J-alloy 150 G” (trade name, manufactured by Nippon Polyolefin Co., Ltd.) was added as the olefin polymer, and the mixture was stirred and dispersed. Separately, 1.5 g of benzoylperoxide as a radical polymerization initiator, 6 g of t-butylperoxymethacryloyloxetyl carbonate as a radical polymerizable organic peroxide, 100 g of divinylbenzene, The vinyl aromatic monomer was dissolved in a mixed solution of 100 g of styrene, and this solution was charged and stirred in the autoclave. Next, the autoclave was heated to 60 to 65 ° C and stirred for 2 hours to impregnate the vinyl monomer containing the radical polymerization initiator and the radically polymerizable organic peroxide into the polypropylene. Was. Next, the temperature was raised to 80 to 85 ° C, and the temperature was maintained for 7 hours to complete the polymerization, followed by washing with water and drying to obtain a graft precursor (b).

 Next, the grafted precursor (b) is extruded at 200 ° C. by a Lapoplast mill single screw extruder (manufactured by Toyo Seiki Seisaku-sho, Ltd.), and a grafting reaction is carried out to obtain a graft copolymer (K). Obtained.

 When the graft copolymer (K) was analyzed by pyrolysis gas chromatography, the weight ratio of polypropylene: divinylbenzene: styrene was 80:10:10.

 At this time, the graft efficiency of the divinylbenzene-styrene copolymer was 50.1% by weight.

 The same test as in Example 1 was performed on the graft copolymer (K) obtained here. Table 5 shows the results of each test.

 (Examples 20 to 24)

(P) was obtained from the graft copolymer (L) in the same manner as in Example 19. Graph Table 1 shows the charge composition of the polymer and the result of composition analysis by pyrolysis gas chromatography. Table 5 also shows the results of each test. Abbreviations in the table indicate the following.

 PP: Polypropylene [] Arrow 150G (trade name, manufactured by Nippon Polyolefin Co., Ltd.)

 PE: Polyethylene “G401” (trade name, manufactured by Nippon Polyolefin Co., Ltd.)

DVB: divinylbenzene

 St: Styrene

DMS: dimethylstyrene

Table 5

 Example 1 9 20 2 1 2 2 23 24 Graft copolymer K and M N Ο P Charge composition PP: DVB PP-.DVB PP: 鹏 PP: PE: DVB PP: DVB

: St: St: St: St: DMS: St

(Weight 80: 10: 50: 1: 5: 10: 95: 4: 1 70: 5 70:10:

 10 49 85: 25 20 Composition analysis result PP: DVB pp: DVB pp: DVB pp: DVB PE: DVB PP: DVB

: St: St: St: St: DMS: St

(Weight; ¾) 80:10: 50: 1: 5:10: 95: 4: 1 70: 5 70:10:

 10 49 85: 25 20 Carbon atom and hydrogen atom

Ratio of the sum of numbers (%)> 99 ＞ 99> 99> 99> 99> 99 Volume resistivity

(Χ10 ' ⁶ Ω -cm) 3.0 3.1 2.9 3.5 2.5 3.0 Dielectric breakdown strength

 (KV / mm) 22 20 19 22 18 22 Dielectric constant 1GHz 2.27 2.33 2.51 2.20 2.35 2.37

 2GHz 2.33 2.30 2.46 2.36

5GHz 2.30 2.28 2.38 2.50 2.44 2.33

10GHz 2.15 2.32 2.43 2.22 Dissipation factor 1GHz 0.59 0.95 0.67 0.87 2.65 0.53

 0.53 0.93 0.62 0.57

5GHz 0.68 0.87 0.60 0.68 2.82 0.62

10GHz 0.66 0.81 G.69 0.71

2oo 〇 〇 〇 〇 〇 〇 Solder heat resistance 230 with 〇 〇 〇 〇 〇 〇

 26trc 〇 △ 〇 〇 〇 〇

7 ift impact value

(Kg-cm / cm ^ 9 8 2 9 No breakage 9 Adhesion to metal 〇 〇 〇 Δ 〇 水 Water absorption (%) <0.03 <0.0;) <0.03 <0.03 <0.03 <0.03 Formability Good Good Good Good Good Good Degree of crosslinking (solubility) Insoluble Insoluble Insoluble Insoluble Insoluble Insoluble (Example 25)

 2700 g of poly 4-methylpentene-1 “TPX RT 18” (trade name, manufactured by Mitsui Petrochemicals Co., Ltd.) and 300 g of the graft copolymer (A) obtained in Example 1 were melt-mixed. The melt mixing method is as follows: After dry blending each resin, it is fed to a coaxial twin screw extruder with a screw diameter of 30 mm set at a cylinder temperature of 260 ° C, extruded, and granulated. I got

 The same test as in Example 1 was performed on the resin (a) obtained here. Table 6 shows the results of each test.

 (Examples 26 to 34)

Resin (b) to (j) were obtained in the same manner as in Example 25. Tables 6 and 7 show the types and proportions of the blended poly 4-methylpentene-11 and the graft copolymer. Tables 6 and 7 also show the results of each test.

Table 6

 Example 2 5 2 6 2 7 2 8 2 9 Resin a b c d e Poly 4-methyl pen

Ten One 1

 (Wt%) 7 0 1 0 9 0 5 9 5 Graft copolymer A B E A A

3 0 9 0 1 0 9 5 5 Carbon atom and hydrogen atom

Ratio of the sum of numbers (%)〉 99> 99> 99> 99> 99 Volume resistivity

 "10" Ω. -c m) 3.l 3.0 "λ n Breakdown strength

 (KV / mm) 22 20 19 21 22 Dielectric constant 1GHz 2.09 2.15 2.11 2.30 2.16

 2GHz 2.21 2.20

 5GHz 2.10 2.18 2.08 2.35 2.30

10GHz 1.99 2.00

Kato Hiderai TE contact 1GHz 0.63 0_ 73 0.93 0.88 0.66

(xltT ¹ ) 2GHz 0.65 0.69

 5GHz 0.61 0.63 1.08 0.63 0.72

1 nr η ςτ 0.55

 20CC 〇 〇 o o o Soldering heat resistance 〇 〇 〇 〇 〇

 260 〇 〇 〇 △ 〇

(Kg-cm / cm ² ) 4 7 2 8 2 Adhesion to metal 〇 〇 〇 〇 △ Water absorption (%) <0.0 〈0.02 〈0.0 Ku 0.02 Moldability Good Good Good Good Good Degree of crosslinking (solubility) Insoluble Insoluble insoluble insoluble insoluble Table 7

 Example 30 3 1 32 3 3 34 Resin f g h i j Poly 4-methyl pen

Ten One 1

 (Wt%) 70 70 60 30 50 Graft copolymer K I A A A oU 40 70 50 Carbon atom and hydrogen atom

Ratio of sum of numbers (%)> 99> 99 ＞ 99> 99> 99 Volume resistivity

(Χ10 ¹⁶ Ω-cm) 3.0 3.0 3.0 3.l 3.1 Dielectric breakdown strength

 (KV / mm) 22 22 21 22 22 Dielectric constant 1GHz 2.25 2.06 2.15 2.18 2.13

 2GHz 2.00 2.11 2.15 2.19

5GHz 2.33 2.12 2.12 2.11 2.10

10GHz 1.95 1.98 2.20 2.07 Dielectric loss tangent 1GHz 0.57 0.62 0.65 0.59 0.58

(ΧΙΟ- ') 2GHz 0.61 0.62 0.63 0.55

 5GHz 0.66 0.59 0.δ4 0.75 0.57

10GHz 0.56 0.59 0.87 0.6

At 200 〇 〇 〇 〇 200 Soldering heat resistance At 230 at 〇 〇 〇 〇 〇

 260 で 〇 260 260 260

(g-cm / cm-) 4 4 5 8 7 Adhesion to metal 〇 〇 〇 〇 水 Water absorption (%) <0.02 0.0 0.02 <0.0 0.0 0.02 <0.02 Formability Good Good Good Good Good Insoluble Insoluble Insoluble Insoluble Insoluble (Examples 35 to 40)

Graft copolymer (A), (B), (C), (D), (E), and (I) each containing 1% by weight of divinylbenzene, Parkmill D (trade name, manufactured by NOF Corporation) Was added at 0.01%. These resins were molded in the same manner as in Example 1, and each evaluation was performed. The results are shown in Table 8.

Table 8

 Example 3 δ 36 3 7 3 8 3 9 40 Graft copolymer A B C D E I Carbon atom and hydrogen atom

Ratio of sum of numbers (%)> 99> 99〉 99> 99〉 99〉 99 Volume resistivity

 (Χ10 '° Ω -cm) 3.1 3.0 2.9 3.5 3.0 3.1 Dielectric breakdown strength

 (KV / ram) 22 20 19 22 19 2? Dielectric constant 1GHz 2.30 2.28 2.50 2.35 2.30 2.26

 2GHz 2.15

5GHz 2.25 2.20 2.58 2.26 2.40 2.18

10GHz 2.09 Dissipation factor 1GHz 0.78 1.60 1.20 1.80 2.25 0.75

 0.70

5GHz 0.76 1.52 1.22 1.78 2.33 0.72

10GHz 0.70

200 〇 〇 〇 〇 〇 〇 Solder heat resistance 230 at 〇 〇 230 〇 〇 〇

 2B0t: 衝 撃 〇 〇 〇 〇 'Eye', ";

(g-cm / cm-) 9 8 2 9 Not destroyed 9 Adhesion to metal 〇 〇 〇 △ 〇 O Water absorption (%) <0.03 <0.03 <0.04 <0.03 <0.03 Formability Good Good Good Good Good Good Good Degree of crosslinking (solubility) Insoluble Insoluble Insoluble Insoluble Insoluble Insoluble (Comparative Examples 1-4)

Polypropylene "Jalloy 150 G" (trade name, manufactured by Nippon Polyolefin Co., Ltd.), Polyethylene "G 401" (trade name, manufactured by Nippon Polyolefin Co., Ltd.), Polystyrene "Dialex HF77" ( (Mitsubishi Monsanto Co., Ltd.) and polypropylene and polystyrene were melt-kneaded at a ratio of 70:30 (% by weight). These resins were molded in the same manner as in Example 1, and each evaluation was performed. The results are shown in Table 9.

Table 9

Comparative Example 1 2 3 4 Resin pp Ρ Ε Ρ ^ς ΡΡ / ρς

(Mixing ratio) 70:30 carbon atom and hydrogen

Ratio of sum of numbers (%)> 99> 99> 99> 99 Molecular weight 300000 /

(MW) 300000 171000 146000 146000 Volume resistivity

 n υ U υ Q Π U

 (KV / mm) 20 20 22 22 Word power 1GHz 2.10 2.09 2.45 2.31

 2GHz 2.12 2.10 2.53

5GHz 2.25 2.07 2.58

10GHz 2.25 2.05

 Lightning TFf * 1Γ.Η7 0.96 0_ 15 0, 34

(XIO- ³ ) 2GHz 0.16 0.17 0.17

 SGHz 0.23 0.16 0.36

10GHz 0.29 0.18

 200 "C X X X X Solder heat resistance 230 with X X X X

 26 (TC X X X X Air impact value

(Kg-cm / cm-; 9 Not destroyed 25 Adhesion to metal XX 〇 Δ Water absorption (%) <0.03 <0.03 <0.03 Excellent 0.03 Formability Good Good Good Good Degree of crosslinking (solubility) Dissolution Dissolution Dissolution (Comparative Examples 5 to 9)

 Ethylene-ethyl acrylate copolymer (EEA) “DPD J 916” (trade name, manufactured by Nippon Tunica Co., Ltd.), ethylene: vinyl acetate copolymer (EVA) “Ultracene 751” (Trade name, manufactured by Tosoh Corporation), ethylene, glycidyl methacrylate copolymer (EGMA) "RA3150" (trade name, Nippon Polyolefin)

Co., Ltd.), polycarbonate (PC) "Iupilone E200," (trade name, manufactured by Mitsubishi Gas Chemical Co., Ltd.) and polyphenylene oxide (PPO) "Noryl SE 1" (trade name, GE The same evaluation as in Example 1 was performed by using Plastic Co., Ltd.). The results are shown in Table 10.

 (Comparative Example 10)

 To 100 g of a PP wax having a weight-average absolute molecular weight of 900, add 0.5 g of 10 g of divinylbenzene and Park Mill D (trade name, manufactured by Nippon Oil & Fats Co., Ltd.), and press the cylinder. The mixture was fed to a coaxial twin-screw extruder with a screw diameter of 3 OIM set to ° C, extruded, and granulated to obtain a thermocrosslinkable polypropylene resin. This resin was molded in the same manner as in Example 1, and each evaluation was performed. The results are shown in Table 10. Abbreviations in the table indicate the following.

 EEA: Ethylene ethyl acrylate copolymer

 EVA: ethylene: vinyl acetate copolymer

 EGMA: Ethylene-dalicidyl methacrylate copolymer

 PC polycarbonate

P PO: Polyphenylene oxide Table 10

 Comparative example o 6 7 8 9 1 0 Resin E E A E V A EGMA P C Ρ Ρ 0 P P Wax Carbon atom and hydrogen atom

 π 1 (¾ ノ; ί 分子量

 (MW) 68000 36000 131000 34000 Unmeasured 900 Volume resistivity

 (ΧΙΟ'Ώ-cm) 1.0 1.0 1.0 2.0 10 3.0

 1 Dielectric breakdown strength

 (KV / mm) 17 18 17 18 20 20 Dielectric constant 1GHz 2.45 2.30 2.45 2.72 2.86 2.11

 2GHz 2.48 2.28 2.30 2.77 2.93 2.18

5GHz 2.40 2.21 2.25 2.84 2.63 2.50

Dissipation factor 1GHz 21.01 25.59 6.01 4.40 0.86

(X10— ^: ') 2GHz 30.05 20.09 24.33 5.33 8.06 0.20

 5GHz 28.37 2! .27 21.30 2.07 5.74 0.22

10GHz

 200t: X X X 〇 〇 X Solder Iff Thermal 230TC X X X 〇 〇 X

 26 ΟΤ: X X X 〇 〇 X

(Kg- cm / cm-) Not broken Not broken Not broken 7 δ 2 0 2 Adhesion to metal 〇 〇 〇 〇 〇 X Water absorption (%) <0.03 <0.03 <0.03 <0.0 0.07 0.03 Moldability Good Good Good Good Good Good Bad Degree of crosslinking (solubility) Dissolve Dissolve Dissolve Dissolve Swell (Comparative Example 11: L5)

 Graft copolymers (Q) to (U) were obtained in the same manner as in Example 19. Table 11 shows the charged composition of the graft copolymer and the result of composition analysis by pyrolysis gas chromatography. Table 11 also shows the results of each test. Abbreviations in the table indicate the following.

 PP: polypropylene

PE: polyethylene

P S: polystyrene

 EE A: Ethylene-ethyl acrylate copolymer "DPD J 9169" (trade name, manufactured by Nippon Tunicar Co., Ltd.)

 EVA: Ethylene: vinyl acetate copolymer “Ultracene 751” (trade name, manufactured by Tosohichi Co., Ltd.)

 EGMA: Ethylene-daricidyl methacrylate copolymer “RA 3150” (trade name, manufactured by Nippon Polyolefin Co., Ltd.)

DVB: divinylbenzene

 St: Styrene

 HEMA: hydroxypropyl methacrylate

AN: Acrylonitrile

table 1

 1 1 1 2 1 3 1 4 1 5 Graft copolymer Q R S T J Charge composition EEA: DVB: PP: St: EVA: St EGMA: St

 l

 (% By weight) 70:10: 60:20: 90: 10 70:30 50:35: 15

 20 20

Composition analysis result EEA: DVB: PP: St: EVA: St EGMA: St

 St HEMA

 (% By weight) 70:10: 60:20: 90:10 10:30:30 50:35:15 Carbon atom and hydrogen atom

g (Normal mouth of the sum (,% bo 97 98 96 Volume resistivity

 (Χ10 "Ώ-cm) 1.0 3.0 1.0 1.0 1.0 Breakdown strength

 (V / mm) 19 22 18 19 18 Dielectric constant 1GHz 2.45 2.52 2.20 2.44 2.36

 2GHz 2.40 2.31 2.25 2.53 2.26

 >

5GHz 2.33 2.25 2.40 2.40 * Q

10GHz

Dielectric tangent 1GHz 0 7 n 9 1.42

 28.51 6.62 6.81 26.35 1.09

5GHz 26.33 7.02 5.95 25.58 1.21

10GHz

 2oo o o X Δ 半 田 Solder heat resistance 230 with Δ 〇 X X 〇

 260 X X X X X

(Kg-cm / cm-; Not broken 9 Not broken Not broken 9 Adhesion to metal 〇 〇 〇 〇 〇 Water absorption (%) 0.1 1 0.05 0. I 0. 1 0.05 Formability Good Good Good Good Good Flexibility (Solubility) Swelling Insoluble Swelling Swelling Swelling From the results of Tables 1 to 11, it is understood that the resin material of the present invention shows superior performance as compared with those of Comparative Examples. If the number of atoms of carbon and hydrogen is not within the range of the present invention, the dielectric loss tangent is large, and those having no chemical bond between resin molecules or those having a molecular weight not within the range of the present invention have poor heat resistance, and Adhesion and strength are not sufficient.

(Example 41)

 The graft copolymer (P) of the present invention of Example 24 was molded into a predetermined shape, and a copper foil having a thickness of 18 / m was heat-sealed on both sides of each of these to form a double-sided copper-clad substrate (thickness t = 0.8 mm, vertical 60 mm, horizontal 80 mm). In addition, Teflon (CGP 500: manufactured by Nakashika Kasei Co., Ltd.), BT resin (vinyl triazine resin: CCL-HL870: manufactured by Mitsubishi Gas Chemical Co., Ltd.), polyphenylene oxide PPO (R 4726: Matsushita Electrician

Substrates using the respective resin materials of Polyphenylene ether PPE (CS 3376: Asahi Kasei Kogyo Co., Ltd.) were prepared. Etching was performed only on one side of each of these substrates, and as shown in FIG. 2, a substrate S was provided with a ring-shaped resonator 1 having a diameter (inner diameter) of 38ππη and a width of 2 rain, an excitation electrode 2 and a detection electrode 3. The coupling between the ring resonator 1 and the excitation and detection electrodes 2 and 3 was adjusted so that the attenuation at each resonance point was -30 dB or more by actually measuring the pass characteristics. Note that the positions of the excitation electrode 2 and the detection electrode 3 are not symmetric as shown in FIG. 2 in order to observe resonance at a plurality of frequencies including harmonics. The excitation electrode 2 was installed at a distance of 21.5 mm from the center of the ring resonator, as shown in the figure, so as to cover the arc corresponding to 15 degrees of the ring resonator.

 Also, there is a slight difference in the energy radiated into the air due to the slight difference in the relative dielectric constant of various substrates, but the same difference occurs when actually used as a circuit board, etc. Value, that is, the unloaded Q value of the resonator substrate.

The measuring instrument used was HP-8753D manufactured by Hewlett-Packard Company. FIG. 2 shows the Q values obtained at each frequency of the various substrates thus obtained.

 From FIG. 2, it can be seen that the product using the graft polymer (P) of the present invention shows a high Q value in a high frequency band of 1 to 6 GHz.

 When the graft polymer (P) of the present invention was evaluated for Cu tensile strength, etching resistance, and linear expansion coefficient ο; as follows, all were at favorable levels. As described above, since the graft polymer of the present invention exhibits good adhesion to the A1 vapor-deposited film, it is expected that sufficient adhesion will be obtained with Cu. It showed adhesion.

Cu tensile peel strength

A test piece with a length of 10 mm, a width of 10 mm, and a thickness of 1.2 πωι was cut out and subjected to a 180-degree pilling test with a cellophane tape of copper foil as an external conductor, and a peeling of 2.0 kg / The case where a force of ² cm ² or more was required was defined as good.

Etching resistance

 The substrate was immersed in a 10% by weight solution of ferric chloride at 25 ° C. for 72 hours to evaluate the state of the substrate. Those with no swelling or gloss deterioration were considered good.

 It was measured by the a_TMA method, and those having a level of 100 to 1200 m / ° C or less in the range of 20 to 200 ° C were evaluated as good.

 (Example 42)

 In Example 41, the same evaluation was performed using the resin (a) of the present invention in Example 25 instead of the graft copolymer (P), and the graft polymer (P) was used. The same good results as those obtained for the substrate were obtained.

 (Example 43)

Example 41 In Examples 1 and 42, a graft copolymer (P) was used in which a reinforcing filler was appropriately selected from alumina, crystalline silica, etc., and was added so as to be 35% by weight of the whole. Obtained a substrate in the same manner. This substrate was evaluated in the same manner as in Example 41. The results showed similar good results, and furthermore, it was found that the Cu tensile peel strength and the thermal conductivity were improved. In addition, if the reinforcing filler was set to 60 to 90 w \%, it could be reduced to a level of 30 ppm / ° C or less.

 (Example 44)

 A chip inductor as shown in FIG. 4 was produced by the following steps.

 1) The resin (a) of the present invention of Example 25 was extruded into a rod having a diameter of lmm and a length of 20 cm.

 2) The above bar was coated with 20 m thick copper by electroless plating and electric plating.

3) The copper coating was spirally removed by a laser beam machine. The width of the remaining copper foil is 200 and the pitch is 400 Aim.

 4) To protect the copper foil, two layers of resin were coated so that the end face of the bar had a 1.2 mm square shape. Of these two layers, the resin (a) of the present invention was used on the inner side, and a resin fumarate ester resin which can be easily removed with a solvent (toluene, xylene, etc.) was used on the outer side. The 1.2 mm square is for the outer resin.

 5) The bar was cut into 2mm length.

 6) Copper was coated by electroless plating to form an electrode on the cut surface.

 7) The outer resin layer applied in 4) was removed with a solvent to remove copper adhering to the side surface.

 8) An electrode was provided on the end face by applying a Ni—Cu plating.

 The electrodes installed on the end faces are further plated with nickel or the like, but this time was omitted. As shown in Fig. 4, the 2012 chip-inductor 10 obtained in this manner has a conductor (Cu foil) 12 wound spirally around a bobbin (bar material) 11, which is used as an exterior material (resin). This is covered with a square at 13. End electrodes 14 and 14 are provided on both end surfaces.

In response to such 2012 Chip Ink evenings, H The self-resonance frequency and coil Q characteristics were evaluated using P-88753D, and were at a practical level.

 (Example 45)

 In Example 44, the same evaluation was performed using a resin obtained by crosslinking the graft copolymer I of Example 40 with DVB instead of the resin (a) of the present invention. The same good characteristics as those using a) were exhibited. The invention's effect

 As described in detail above, the heat-resistant low-dielectric polymer material of the present invention has a low dielectric constant, a low dielectric loss tangent, excellent solder heat resistance, high workability such as moldability, high mechanical strength, It has the effect of having excellent adhesion to metals and the like. Therefore, the polymer material of the present invention is useful for applications requiring electrical insulation, solder heat resistance and mechanical properties, such as printed wiring boards and computer components, and has excellent performance for substrates and electronic components. Is obtained.

Claims

The scope of the claims

1. A resin composition comprising one or more resins having a weight-average absolute molecular weight of 100 or more, wherein the sum of the number of carbon atoms and hydrogen atoms in the composition is at least 99%. A heat-resistant low-dielectric polymer material that has a resin bond and some or all of the resin molecules have a chemical bond with each other.

 2. The heat-resistant low dielectric polymer material according to claim 1, wherein the chemical bond is at least one selected from crosslinking, block polymerization, and graft polymerization.

 3. The resin composition is a copolymer in which a non-polar olefin polymer segment and / or a non-polar conjugated polymer segment and a vinyl aromatic polymer segment are chemically bonded. 3. The heat-resistant resin according to claim 1 or 2, wherein the dispersed phase formed by said segment is a thermoplastic resin having a multiphase structure in which the dispersed phase is finely dispersed in a continuous phase formed by the other segment. Dielectric polymer material.

4. The heat-resistant, low-dielectric high-molecular material according to claim 3, wherein the non-polar α-refined polymer segment and the vinyl aromatic polymer segment are copolymers chemically bonded to each other.

 5. The heat-resistant low dielectric polymer material according to claim 3, wherein the vinyl aromatic polymer segment is a vinyl aromatic copolymer segment containing a divinylbenzene monomer.

 6. The heat-resistant low-dielectric polymer material according to claim 4 or 5, which is a copolymer chemically bonded by graft polymerization.

 7. A heat-resistant, low-dielectric high-molecular compound obtained by adding a non-polar α-methyl olefin polymer containing a monomer of 4-methylpentene-1 to the resin composition according to any one of claims 1 to 6. material.

8.1 Any of claims 1 to 7 used in the high frequency band above 1 MHz The heat-resistant low-dielectric polymer material according to any one of the above.

 9. A film having a thickness of 50 m or more using the heat-resistant low-dielectric polymer material according to any one of claims 1 to 8.

 10. A substrate on which the film according to claim 9 is laminated.

 11. The film according to claim 9, wherein the film is used in a high-frequency band of 1 MHz or more.

12. The substrate according to claim 10, which is used in a high-frequency band of 1 MHz or more.

13. An electronic component using the heat-resistant low-dielectric polymer material according to any one of claims 1 to 8 for use in a high frequency band of 1 MHz or more.

 14. A heat-resistant resin molded product obtained by molding the heat-resistant low-dielectric polymer material according to any one of claims 1 to 8 into a predetermined shape.