KR20230089177A - Multi layer film with low dielectric constant and method for preparing the same - Google Patents

Abstract

Provided are a multilayer film with a low dielectric constant and a method for preparing the same. The multilayer film with a low dielectric constant comprises an intermediate layer, a first resin layer stacked on one side of the intermediate layer, and a second resin layer stacked on the other side of the intermediate layer. The intermediate layer includes a plurality of voids in the form of slits arranged in one direction, and a plurality of inorganic hollow particles.

Description

Low dielectric multilayer film and manufacturing method thereof {MULTI LAYER FILM WITH LOW DIELECTRIC CONSTANT AND METHOD FOR PREPARING THE SAME}

The present invention relates to low dielectric multilayer films and methods of making the same.

The low-dielectric film may be laminated on an adherend made of metal such as copper to lower the dielectric constant, thereby minimizing the influence of electrical stimulation when the adherend is driven.

Conventional low dielectric films are manufactured using a blowing agent. Specifically, referring to FIG. 3, a matrix 11 impregnated with a foaming agent 2 is prepared, and the foaming agent 2 is foamed in the prepared matrix 11 to form a void 4 in the matrix 11. By forming a low dielectric film is being produced. However, the foaming process involves an additional process when manufacturing a low dielectric film, and since this process is an indispensable process for low dielectric constant, there are problems in fairness and economy.

The low dielectric film can generally be applied to FCCL (Flexible Copper Clad Laminates) or the like. FCCL has a structure in which conductive layers such as copper are laminated on both sides of a low dielectric film. FCCL goes through a DES (Developing, Etching, Stripping) process to form a circuit pattern desired by a user. In this process, an acidic solution is used to dissolve the metal layer, followed by dipping in a base solution for acid neutralization and washing, followed by washing with water. When voids are exposed on the surface of a low dielectric film, there is a possibility that an acid or base solution may remain in the voids, which may increase the defect rate or cause performance degradation in the manufacturing process of FPCB (Flexible Printed Circuit Board) that forms patterns. the possibility increases. In addition, when the contact area with the conductor layer is reduced due to voids on the surface of the low dielectric film, the adhesive strength with the conductor layer is weakened, reducing the reliability of the product (FCCL) in which the low dielectric film and the conductor layer are laminated. It can be.

The background art of the present invention is described in Korean Patent Registration No. 10-2143248 and the like.

An object of the present invention is to provide a low dielectric multilayer film having a remarkably low dielectric constant and excellent reliability, and a manufacturing method thereof.

One aspect of the present invention is a low dielectric multilayer film.

1. A low dielectric multilayer film includes an intermediate layer, a first resin layer laminated on one surface of the intermediate layer, and a second resin layer laminated on the other surface of the intermediate layer, wherein the intermediate layer has slits arranged in one direction a plurality of voids in the form; and a plurality of inorganic hollow particles.

In 2.1, the slits may be spaced apart from each other.

In 3.1-2, the one direction may be a horizontal direction or a vertical direction among in-plane directions of the intermediate layer.

In 4.1-3, the inorganic hollow particles may be hollow silica.

In 5.1-4, the inorganic hollow particles may be included in 1% to 20% by weight of the intermediate layer.

In 6.1-5, the intermediate layer includes a matrix impregnated with the voids and the inorganic hollow particles, and the matrix may have a melting point of 250°C or higher.

In 7.6, the matrix is aromatic polyester, LCP (liquid crystal polymer), PPS (polyphenylenesulfide), PTFE (polytetrafluoroethylene), PEEK (polyetheretherketone) , polyetheretherketone), and one or more types of olefin resins.

Another aspect of the present invention is a method of making a low dielectric multilayer film.

8. A method for manufacturing a low dielectric multilayer film comprising a plurality of voids in the form of slits arranged in one direction; and preparing an intermediate layer comprising a plurality of inorganic hollow particles;

laminating a first resin layer on one side of the intermediate layer, and laminating a second resin layer on the other side of the intermediate layer.

9. In 8, the step of preparing the intermediate layer is to prepare a composition for the intermediate layer by mixing the matrix resin in the form of a pellet and inorganic hollow particles, to prepare an unstretched film from the composition for the intermediate layer, and to prepare the unstretched film A step of uniaxial or biaxial stretching may be included.

The present invention provides a low dielectric multilayer film having a remarkably low dielectric constant and excellent reliability, and a manufacturing method thereof.

1 is a cross-sectional view of a low dielectric multilayer film according to an embodiment of the present invention.
2 is a conceptual diagram of a process for manufacturing an intermediate layer of a low dielectric multilayer film of the present invention.
3 is a conceptual diagram of a conventional low dielectric film manufacturing process.

The present invention will be described in more detail with reference to the accompanying drawings and embodiments of the present application. However, the technology disclosed in this application may be embodied in other forms without being limited to the drawings and embodiments described herein. However, the embodiments introduced herein are provided so that the disclosed content can be thorough and complete and the spirit of the present application can be sufficiently conveyed to those skilled in the art. In order to clearly describe the present invention, parts irrelevant to the description are omitted.

The low dielectric multilayer film of the present invention includes an intermediate layer, a first resin layer laminated on one surface of the intermediate layer, and a second resin layer laminated on the other surface of the intermediate layer, wherein the intermediate layer has slits arranged in one direction. ) form a plurality of voids; and a plurality of inorganic hollow particles.

The low-dielectric multilayer film of the present invention includes a plurality of slit-shaped voids and a plurality of inorganic hollow particles arranged in one direction in an intermediate layer, so that the permittivity is remarkably low. In addition, the present invention, by laminating the first resin layer and the second resin layer on both sides of the intermediate layer, respectively, the slit-shaped void formed on the outermost surface including the upper and lower surfaces of the intermediate layer is formed in the first resin layer and the second resin layer. By being closed by the resin layers, respectively, the reliability of the entire low dielectric multilayer film and the laminate including the low dielectric multilayer film can be improved.

The low dielectric multilayer film of the present invention can be applied to a copper clad laminate, for example FCCL.

In this specification, 'permittivity' may mean a dielectric constant (Dk) and a dielectric loss tangent (Df) measured by a split post dielectric resonance (SPDR) method at a frequency of 10 GHz and 25 ° C.

Hereinafter, referring to FIG. 1, a low dielectric multilayer film according to an embodiment of the present invention will be described.

Referring to FIG. 1, a low dielectric multilayer film 100 includes an intermediate layer 10, a first resin layer 20 laminated on one surface of the intermediate layer 10, and a second resin layer laminated on the other surface of the intermediate layer 10. A resin layer (30) is included.

In one embodiment, the low dielectric multilayer film 100 may be a three layer film. The total thickness of the low dielectric multilayer film 100 may be 12.5 μm to 100 μm, specifically 25 μm to 75 μm. Within the above range, an effect of thinning the low dielectric multilayer film can be obtained.

middle layer (10)

The intermediate layer 10 may serve to lower the permittivity of the low dielectric multilayer film. To this end, the intermediate layer 10 includes a plurality of voids 12 in the form of slits arranged in one direction; and a plurality of inorganic hollow particles (13).

In this specification, a 'slit' will be described with reference to FIG. 1 .

The slit is formed in a major axis direction and a minor axis direction, and FIG. 1 shows a cross section of the slit in the major axis direction. As shown in FIG. 1 , the cross section of the slit in the long axis direction is composed of a long side and a short side, and means a shape having a polygonal shape, for example, a rectangular cross section, in which the long side is longer than the short side. The uniaxial cross-section of the slit may be circular or amorphous. The long axis direction of the slit may be substantially the same as the stretching direction of the matrix described below.

The slit-shaped voids 12 are arranged not in the thickness direction of the intermediate layer 10 but in one of the in-plane directions, that is, in the horizontal direction or the vertical direction of the in-plane direction of the intermediate layer 10 . At this time, the arrangement direction of the slit-shaped voids 12 of the intermediate layer 10 may be substantially the same as the long axis direction of the slit-shaped voids. The 'substantially same' may mean that the angle between the arrangement direction of the slit-shaped voids 12 of the intermediate layer 10 and the long axis direction of the slit is 0° to 5°, preferably 0°. Within this range, it may help to lower the dielectric properties of the low dielectric multilayer film.

The voids 12 in the form of slits are spaced apart from each other in the intermediate layer 10, and may have a length in the major axis direction of 100 nm to 5,000 nm, specifically 500 nm to 3,000 nm, and a length in the minor axis direction of 10 nm to 1,000 nm, specifically It may be 50 nm to 500 nm. Within this range, it may help to lower the dielectric constant without increasing the thickness of the multilayer film.

The void 12 in the form of a slit may be included in an amount of 5% to 30% by volume, for example, 10% to 30% by volume of the middle layer 10 . Within this range, the permittivity of the low dielectric multilayer film may be significantly lowered.

In one embodiment, the outermost surface comprising the top or bottom surface of the intermediate layer may include exposed voids.

As described below, the slit-shaped void 12 can be produced by transforming a void of a shape other than a slit shape such as a sphere or a hemispherical shape into a slit shape by stretching. This will be described in detail below.

The inorganic hollow particles 13 are hollow particles with a hollow inside and may be spherical or hemispherical or amorphous in shape. The inorganic hollow particles 12 can significantly lower the permittivity compared to other conventional low dielectric materials, such as talc and calcium carbonate, and further improve reliability.

The inorganic hollow particles 13 may consist of a hollow, air-filled core and a shell formed outside the core and surrounding the core. The shell may be formed of silica or the like, but is not limited thereto.

The inorganic hollow particles 13 may be included in an amount of 0.5 wt% to 40 wt%, specifically 1 wt% to 20 wt%, of the intermediate layer 10 . Within this range, it may help to lower the dielectric constant without increasing the thickness of the multilayer film.

In one embodiment, the inorganic hollow particles 13 may be arranged in the same direction as the arrangement direction of the slit-shaped voids and/or the elongation direction of the matrix.

Slit-shaped voids 12 and inorganic hollow particles 13 are impregnated in the matrix 11 for the intermediate layer 10 .

The matrix 11 can reduce the permittivity of the multilayer film by stably including the slit-shaped voids 12 and inorganic hollow particles 13 in the multilayer film, and has a spherical or hemispherical shape by the stretching process described below. It is possible to transform the voids into slit-shaped voids.

The matrix 11 may have a melting point of 250°C or higher, specifically 250°C to 350°C, more specifically 250°C to 300°C. Within this range, it is possible to withstand the stretching temperature required to transform spherical or hemispherical voids into slit-shaped voids, and thus, it is possible to easily manufacture a multilayer film.

The matrix 11 may be stretched in one direction. Preferably, the matrix 11 may be stretched in the same direction as the slit-shaped voids 12 .

The matrix 11 is aromatic polyester, LCP (liquid crystal polymer), PPS (polyphenylenesulfide), PTFE (polytetrafluoroethylene), PEEK (polyetheretherketone, polyetheretherketone), it may be formed of one or more resins of the olefin system, but is not limited thereto. Preferably, the matrix 11 is formed of an aromatic polyester resin, so that the effect of the present invention can be easily realized. The resin may have a melting point of 250 °C or higher, specifically 250 °C to 350 °C, and more specifically 250 °C to 300 °C. Within this range, it is possible to withstand the stretching temperature required to transform spherical or hemispherical voids into slit-shaped voids, and thus, it is possible to easily manufacture a multilayer film.

The intermediate layer 10 may have a thickness of 6 μm to 50 μm, specifically 12.5 μm to 37.5 μm. Within the above range, an effect of thinning the low dielectric multilayer film can be obtained.

The ratio of the thickness of the intermediate layer 10 to the total thickness of the multilayer film may be 20% to 80%, specifically 50% to 70%. Within the above range, it is possible to facilitate implementation of the effects of the present invention.

First resin layer (20)

The first resin layer 20 is laminated on one surface of the intermediate layer 10, thereby closing the slit-shaped void 12 exposed on the outermost surface of the intermediate layer 10, thereby increasing the reliability of the multilayer film. Accordingly, the first resin layer 20 may further include slit-shaped voids 12, but preferably does not include slit-shaped voids 12.

The first resin layer 20 is a layer that is not stretched compared to the intermediate layer 10 .

The first resin layer 20 may be directly laminated on one surface of the intermediate layer 10 (without an adhesive layer, an adhesive layer, or an adhesive layer) or may be laminated on one surface of the intermediate layer 10 by an adhesive layer, an adhesive layer, or an adhesive layer. may be Preferably, the first resin layer 20 may be directly laminated on one surface of the intermediate layer 10, and the first resin layer 20 is disposed on the outermost surface of the intermediate layer 10, the slit-shaped void 12 ), it is possible to further increase the reliability of the multilayer film.

The first resin layer 20 may be formed of the same or different type of resin compared to the matrix 11 of the intermediate layer 10 . For example, the first resin layer 20 may be formed of one or more of aromatic polyester, LCP, PPS, PTFE, PEEK, and olefin resin, but is not limited thereto. Preferably, the first resin layer 20 is formed of an aromatic polyester resin, so that the effects of the present invention can be easily implemented. The resin may have a melting point of 250 °C or higher, specifically 250 °C to 350 °C, and more specifically 250 °C to 300 °C. Within this range, it is possible to easily manufacture a multilayer film.

The first resin layer 20 may have a thickness of 3 μm to 25 μm, specifically 6 μm to 20 μm. Within the above range, an effect of thinning the low dielectric multilayer film can be obtained.

Second resin layer (30)

The second resin layer 30 is stacked on the other side of the intermediate layer 10, thereby closing the slit-shaped void 12 exposed on the outermost surface of the intermediate layer 10, thereby increasing the reliability of the multilayer film. Accordingly, the second resin layer 30 may further include slit-shaped voids 12, but preferably does not include slit-shaped voids 12. The second resin layer 30 is a layer that is not stretched compared to the intermediate layer 10 .

The second resin layer 30 may be directly laminated on the other side of the intermediate layer 10 (without an adhesive layer, an adhesive layer, or an adhesive layer) or by an adhesive layer, an adhesive layer, or an adhesive layer on the other side of the intermediate layer 10. may be layered. Preferably, the second resin layer 30 may be directly laminated on the other side of the intermediate layer 10, and the second resin layer 30 is a slit-shaped void disposed on the outermost surface of the intermediate layer 10 ( 12), the reliability of the multilayer film can be further increased.

The second resin layer 30 may be formed of the same or different type of resin compared to the matrix 11 of the intermediate layer 10 . For example, the second resin layer 30 may be formed of one or more of aromatic polyester, LCP, PPS, PTFE, PEEK, and olefin resin, but is not limited thereto. Preferably, the second resin layer 30 is formed of an aromatic polyester resin, so that the effects of the present invention can be easily realized. The resin may have a melting point of 250 °C or higher, specifically 250 °C to 350 °C, and more specifically 250 °C to 300 °C. Within this range, it is possible to easily manufacture a multilayer film.

The second resin layer 30 may have a thickness of 3 μm to 25 μm, specifically 6 μm to 20 μm. Within the above range, an effect of thinning the low dielectric multilayer film can be obtained.

Hereinafter, a method for manufacturing a low dielectric multilayer film according to an embodiment of the present invention will be described.

A method of manufacturing a low dielectric multilayer film includes a plurality of voids arranged in one direction in the form of slits; and preparing an intermediate layer including a plurality of inorganic hollow particles, laminating a first resin layer on one side of the intermediate layer, and laminating a second resin layer on the other side of the intermediate layer.

Preparing the Intermediate Layer

In the step of preparing the intermediate layer, the composition for the intermediate layer is prepared by mixing the inorganic hollow particles with the composition for the matrix, the prepared composition for the intermediate layer is extruded to prepare an unstretched film, and the prepared unstretched film is uniaxially An intermediate layer is prepared by stretching in a direction or biaxial direction.

The composition for the matrix may include the above-mentioned resin for the matrix. The resin for the matrix is substantially the same as described above. In one embodiment, the resin for the matrix may be included in the form of pellets having a predetermined shape.

The matrix resin in the form of pellets can be included in the matrix composition by pretreatment. For example, the matrix resin in the form of a pellet may be pretreated by drying at 120° C. to 150° C. for 2 hours or more, for example, 2 hours to 5 hours, and then UV irradiation. This pretreatment can increase the wettability of the inorganic hollow particles to the matrix resin.

The inorganic hollow particles may include the aforementioned inorganic hollow particles. The inorganic hollow particles are spherical or hemispherical particles, and may have an average diameter (D50) of greater than 0 μm and less than or equal to 20 μm, specifically, 5 μm to 20 μm. Within this range, the effects of the present invention can be easily implemented.

Inorganic hollow particles can be included in the matrix composition by pretreatment. For example, the inorganic hollow particles may be pretreated by heat treatment at a temperature of 150° C. to 200° C. for 2 hours or more, specifically 2 hours to 5 hours.

The inorganic hollow particles may be included in an amount of 0.5 wt % to 40 wt %, specifically 1 wt % to 20 wt %, in the composition for an intermediate layer. Within this range, the effects of the present invention can be easily implemented.

The composition for the intermediate layer may be prepared by mixing the pretreated pellet-type matrix resin and the pretreated inorganic hollow particles by an appropriate method.

An unstretched film may be prepared by molding the prepared composition for an intermediate layer by a conventional method known to those skilled in the art. For example, the unstretched film is adjusted to a temperature of (Tm - 30) ℃ to (Tm + 30) ℃ when the screw / barrel temperature of the single screw or twin screw extruder is the melting temperature of the composition for the intermediate layer is Tm Next, the composition for the intermediate layer is introduced, and the composition for the intermediate layer is melted and kneaded at a speed of 10 to 50 rpm under the condition that the screw diameter is 25 mm or more and the L / D is 30 or more, and using a T die with a width of 300 mm or more It can be produced by extrusion.

An intermediate layer may be prepared by stretching the prepared unstretched film by uniaxial stretching or biaxial stretching.

Referring to FIG. 2, the interlayer film 1 in which non-slit voids 14 and inorganic hollow particles 13 are impregnated in the matrix 11 is stretched to form slit-shaped voids 12 and inorganic hollow particles. A film 10 for an intermediate layer in which (13) is impregnated into the matrix 11 can be produced.

The non-slit void 14 has a shape other than the slit shape, such as a sphere or a hemispherical shape, and is transformed into a slit shape by stretching the matrix or intermediate layer film. During the stretching process, the shape of the inorganic hollow particles 13 is not deformed. To this end, the stretching ratio of the matrix, the stretching temperature, and the like must be adjusted. The voids 14 that are not in the form of slits may be air bubbles included in the process of preparing the composition for the intermediate layer.

In one embodiment, the prepared unstretched film may be uniaxially stretched in the mechanical direction (MD) of the film, and in this case, the stretching ratio may be 2 to 12 times, specifically 2 to 8 times. In another embodiment, the prepared unstretched film may be biaxially stretched by stretching in the MD of the film and then in the transverse direction (TD) of the film, wherein the MD stretching ratio is 2 to 12 times, specifically 2 to 12 times. 8 times, the TD stretching ratio may be 2 times to 4 times, specifically 1.5 times to 3 times. Within this range, an intermediate layer providing the permittivity of the present invention can be prepared. The stretching temperature may be from (Tm - 30) °C to (Tm + 30) °C, for example, from 250 °C to 350 °C, assuming that the melting temperature of the composition for the middle layer is Tm.

Laminating the first resin layer

A film for the first resin layer is prepared, and the film for the first resin layer may be laminated at a predetermined temperature on one side of the prepared intermediate layer.

The film for the first resin layer can be produced by extruding a resin-containing composition that forms a film for the first resin layer without inorganic hollow particles. The resin forming the film for the first resin layer is the same as described above.

When the melting temperature of the composition for the middle layer is referred to as Tm, the laminating temperature may be (Tm + 10) °C to (Tm + 50) °C, for example, 250 °C to 350 °C. Within the above range, the first resin layer can be well laminated to the intermediate layer, and reliability can be increased by closing the slit-shaped inorganic hollow particles formed on the outermost surface of the intermediate layer.

Laminating the second resin layer

A film for the second resin layer is prepared, and the film for the second resin layer may be laminated on one side of the prepared intermediate layer at a predetermined temperature.

The film for the second resin layer can be produced by extruding a resin-containing composition that forms a film for the second resin layer without inorganic hollow particles. The resin forming the film for the second resin layer is the same as described above.

When the melting temperature of the composition for the middle layer is referred to as Tm, the laminating temperature may be (Tm + 10) °C to (Tm + 50) °C, for example, 250 °C to 350 °C. Within this range, the second resin layer can be well laminated to the intermediate layer, and reliability can be increased by closing the slit-shaped inorganic hollow particles formed on the outermost surface of the intermediate layer.

Hereinafter, the configuration and operation of the present invention will be described in more detail through preferred embodiments of the present invention. However, this is presented as a preferred example of the present invention and cannot be construed as limiting the present invention by this in any sense.

Example 1

Aromatic polyester-based resin (Vectra A950, Celanese (US), melting point: 280 ° C.) pellets were dried at 120 ° C. for 2 hours, and then UV was irradiated on the surface of the pellets to pre-treat the pellets. The hollow silica (average diameter (D50): 20 μm) was dried at 180° C. for 2 hours to pre-treat the hollow silica. A composition for an intermediate layer was prepared by including the pretreated hollow silica in an amount of 10% by weight in the pretreated pellets and stirring using a Hensel mixer.

After adjusting the screw/barrel temperature of the prepared intermediate layer composition to 300° C. in the single screw extruder, the composition for the intermediate layer was added, and the composition for the intermediate layer was operated at a speed of 10 rpm under the condition that the screw diameter was 25 mm and the L/D was 30. was melted and kneaded, and extruded using a 300 mm wide T die to prepare an unstretched film for an intermediate layer (thickness: 100 μm).

An intermediate layer having a final thickness of 50 μm was prepared by stretching the prepared unstretched film for an intermediate layer at 295° C. by MD uniaxially stretching twice as much as the MD of the film.

A film made of an aromatic polyester resin without hollow silica (thickness: 12.5 μm, Vectra A950, Celanese (US), melting point: 280 ° C) was prepared as a first resin layer, and the prepared first water layer was placed on one side of the prepared intermediate layer. The strata were laminated at 290°C.

A film made of an aromatic polyester resin without hollow silica (thickness: 12.5 μm, Vectra A950, Celanese (US), melting point: 280 ° C) was prepared as a second resin layer, and the prepared second water layer was placed on one side of the prepared intermediate layer. The strata were laminated at 290°C.

Through this, the low dielectric multilayer film of the present invention was prepared.

Example 2

A low dielectric multilayer film was manufactured in the same manner as in Example 1, except that the MD uniaxial stretching was performed by changing the stretching ratio of the unstretched film to 3 times.

Example 3

A low dielectric multilayer film was manufactured in the same manner as in Example 1, except that the MD uniaxial stretching was performed by changing the stretching ratio of the unstretched film to 4 times.

Comparative Example 1

A low dielectric multilayer film was prepared in the same manner as in Example 1, except that the inorganic hollow particles were not included in Example 1. The middle layer of the low dielectric multilayer film does not contain inorganic hollow particles at all.

Comparative Example 2

A low dielectric multilayer film was prepared in the same manner as in Example 1, except that the unstretched film was not stretched, although the inorganic hollow particles were included. The middle layer of the low dielectric multilayer film includes spherical inorganic hollow particles.

Comparative Example 3

A low dielectric multilayer film was manufactured in the same manner as in Example 1, except that calcium carbonate was included in the same content in place of the inorganic hollow particles in Example 1. An intermediate layer in the low dielectric multilayer film includes slit-shaped calcium carbonate.

Comparative Example 4

A low dielectric multilayer film was prepared in the same manner as in Example 1, except that the same content of talc was included instead of the inorganic hollow particles in Example 1. The middle layer of the low dielectric multilayer film includes slit-shaped talc.

The physical properties of Table 1 below were evaluated using the aromatic polyester foam prepared in Examples and Comparison.

Dielectric constant (unit: none) and dielectric loss tangent (unit: none): The dielectric constant and dielectric loss tangent were measured by the SPDR (Split Post Dielectric Resonator) method using Keysight's Network Analyzer E5071C equipment, and the Dielectric Resonator jig A specimen having an area of 40 mm (W) × 80 mm (L) was inserted, and the dielectric constant and dielectric loss tangent were measured at a frequency of 10 GHz.

particle with or without stretching stretch ratio Presence or absence of the first resin layer and the second resin layer dielectric constant dielectric loss tangent Example 1 hollow silica stretching Twice has exist 3.202 0.0028 Example 2 hollow silica stretching 3 times has exist 3.148 0.0028 Example 3 hollow silica stretching 4 times has exist 3.085 0.0027 Comparative Example 1 doesn't exist stretching Twice has exist 3.450 0.0016 Comparative Example 2 hollow silica unstretched - has exist 3.251 0.00293 Comparative Example 3 calcium carbonate stretching Twice has exist 3.495 0.0027 Comparative Example 4 talc stretching Twice has exist 3.237 0.0029

As shown in Table 1, the low dielectric multilayer film of the present invention had a remarkably low dielectric constant and excellent reliability. On the other hand, the multilayer film of Comparative Example, which does not satisfy the constitution of the present invention, does not satisfy the effect of the present invention.

Simple modifications or changes of the present invention can be easily performed by those skilled in the art, and all such modifications or changes can be considered to be included in the scope of the present invention.

Claims (9)

An intermediate layer, a first resin layer laminated on one surface of the intermediate layer, and a second resin layer laminated on the other surface of the intermediate layer,
The middle layer may include a plurality of voids arranged in one direction in the form of a slit; and a plurality of inorganic hollow particles.
The low dielectric multilayer film of claim 1 , wherein the slits are spaced apart from each other.
The low dielectric multilayer film according to claim 1 , wherein the one direction is a horizontal direction or a vertical direction among in-plane directions of the intermediate layer.
The low dielectric multilayer film of claim 1 , wherein the inorganic hollow particles are hollow silica.
The low dielectric multilayer film of claim 1, wherein the inorganic hollow particles are included in an amount of 1% to 20% by weight of the intermediate layer.
The low dielectric multilayer film of claim 1 , wherein the intermediate layer includes a matrix impregnated with the voids and the inorganic hollow particles, and the matrix has a melting point of 250° C. or higher.
The method of claim 6, wherein the matrix is aromatic polyester, LCP (liquid crystal polymer), PPS (polyphenylenesulfide, polyphenylenesulfide), PTFE (polytetrafluoroethylene), PEEK (polytetrafluoroethylene) Ether ether ketone, polyetheretherketone), a low dielectric multilayer film comprising at least one resin of the olefin system.
a plurality of voids in the form of slits arranged in one direction; And manufacturing an intermediate layer containing a plurality of inorganic hollow particles, laminating a first resin layer on one side of the intermediate layer, and laminating a second resin layer on the other side of the intermediate layer, A method for producing low dielectric multilayer films.
9. The method of claim 8, wherein the step of preparing the intermediate layer
A composition for an intermediate layer is prepared by mixing a pellet-type matrix resin and inorganic hollow particles,
Preparing an unstretched film from the composition for the intermediate layer,
A method for producing a low dielectric multilayer film comprising the step of uniaxially or biaxially stretching the unstretched film.

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