WO1998049521A1 - Installation pour inspecter des dispositifs a semi-conducteurs - Google Patents

Installation pour inspecter des dispositifs a semi-conducteurs Download PDF

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Publication number
WO1998049521A1
WO1998049521A1 PCT/JP1998/001916 JP9801916W WO9849521A1 WO 1998049521 A1 WO1998049521 A1 WO 1998049521A1 JP 9801916 W JP9801916 W JP 9801916W WO 9849521 A1 WO9849521 A1 WO 9849521A1
Authority
WO
WIPO (PCT)
Prior art keywords
image
semiconductor device
inspection apparatus
imaging
device inspection
Prior art date
Application number
PCT/JP1998/001916
Other languages
English (en)
Japanese (ja)
Inventor
Kazuyuki Yamamoto
Tatsunori Hibara
Masamitsu Okamura
Masahiko Sakamoto
Masahiko Uno
Masaharu Yoshida
Original Assignee
Mitsubishi Denki Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Denki Kabushiki Kaisha filed Critical Mitsubishi Denki Kabushiki Kaisha
Publication of WO1998049521A1 publication Critical patent/WO1998049521A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Definitions

  • the present invention relates to a semiconductor device inspection apparatus for inspecting the appearance of a wire bonded to a pad of a semiconductor chip and a lead of a lead frame.
  • FIG. 10 is a configuration diagram of a conventional key bonding inspection apparatus described in, for example, Japanese Patent Application Laid-Open No. 7-63528.
  • 1 is a semiconductor chip to be inspected
  • 3 is oblique illumination for illuminating the semiconductor chip 1
  • 4 is epi-illumination for illuminating the semiconductor chip 1
  • 5 is an image of the semiconductor chip 1.
  • 6 is an oblique illumination 3, an epi-illumination 4, an optical head having an imaging means 5 assembled thereto
  • 2 is an XYZ for positioning the imaging means 5 (optical head 6) with respect to the semiconductor chip 1.
  • a stage, 7 is an illumination control unit that adjusts the amount of light for the oblique illumination 3 and epi-illumination 4, and switches the illumination.
  • 8 is an image processing unit that analyzes image data captured by the imaging means 5.9 is an XYZ stage 2.
  • a stage control unit 10 controls the operation of the system, and 10 is an overall control unit for controlling the entire system.
  • FIG. 6 is a schematic diagram of a semiconductor chip 1 to be inspected by this apparatus.
  • 11 denotes a ball
  • 12 denotes a wire
  • 13 denotes a stitch
  • 14 denotes a lead.
  • the imaging means 5 is moved to the position where the first pole part exists with respect to the semiconductor chip 1 to be the object using the XYZ stage 2, and the image of the pole 11 is captured after focusing.
  • the image at this time is, for example, as shown in Fig. F.
  • a plurality of balls 11a, 11b, and 11c are captured in one screen.
  • Wires 1 2 and stitches 13 are also moved to the first target item position in the same way as ball 11, and after focusing, they can be taken into the screen (the total number of wires in the chip-screen
  • the stage is moved in the X and Y directions by repeating the stage in the X and Y directions (the total number of stitches in the chip minus the number of stitches that can be captured in the screen).
  • Fig. 8 for wire 12 and Fig. 9 for stitch 13 as shown in Fig. 9 multiple wires 12a, 12b, 12 c, Stitches 13a, 13b are taken.
  • the inspection time by this method is, for example, in the case of a 200-pin semiconductor chip, it takes about two minutes per chip to inspect all items.
  • the XY of the XYZ stage 2 instead of reducing the number of movements in the direction, the number of focusing operations for each test item, that is, the number of movements in the Z-axis direction, increases.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device inspection apparatus capable of capturing an image of a wide area at a high resolution and at a high speed.
  • a semiconductor device inspection apparatus for inspecting the appearance of a wire bonded to a pad of a semiconductor chip and a lead of a lead frame.
  • the semiconductor device inspection apparatus uses a galvanomirror as the optical axis deflection switching means.
  • the semiconductor device inspection apparatus uses a CCD line sensor as the imaging means.
  • the semiconductor device inspection apparatus is characterized in that the optical axis deflection switching is performed while synchronizing with the image capturing timing of the imaging unit.
  • a two-dimensional image is formed by giving a driving system a moving speed corresponding to the image sensor size corresponding to the line sensor element size every time a video is captured.
  • two sets of the optical axis deflection switching unit and the imaging unit are arranged for scanning in the X and Y axis directions.
  • the semiconductor device inspection apparatus is arranged such that the imaging unit is connected to the driving unit, and the line sensor is connected to the driving unit every time the image is captured while synchronizing with the video capturing timing of the imaging unit.
  • the imaging unit is connected to the driving unit, and the line sensor is connected to the driving unit every time the image is captured while synchronizing with the video capturing timing of the imaging unit.
  • FIG. 1 is a configuration diagram showing a semiconductor device inspection apparatus according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic view of a semiconductor chip for explaining an image capturing method according to Embodiment 1 of the present invention.
  • FIG. 3 is an enlarged view of the pole portion for explaining the effect of the image capturing method according to the first embodiment of the present invention.
  • FIG. 4 is a principle diagram of an optical system for describing an image capturing method according to the first embodiment of the present invention.
  • FIG. 5 is a supplementary configuration diagram showing an additional portion of the configuration diagram of the semiconductor device inspection device according to the second embodiment of the present invention.
  • FIG. 6 is a schematic view of a semiconductor chip as an object of the present invention.
  • FIG. 3 is an enlarged view of a pole portion.
  • FIG. 8 is an enlarged view of a wire portion.
  • FIG. 9 is an enlarged view of a stitch portion.
  • FIG. 10 is a configuration diagram showing a conventional semiconductor device inspection apparatus. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 is a configuration diagram showing a semiconductor device inspection apparatus according to a first embodiment of the present invention. Specifically, a semiconductor device inspection apparatus that performs an appearance inspection of a wire bonded to a pad of a semiconductor chip and a lead of a lead frame. The configuration is shown.
  • reference numeral 1 denotes a semiconductor chip to be inspected, which is positioned on an inspection table.
  • 15a and 15b denote optical axis deflection switching means, respectively, a galvanomirror for X-axis deflection (hereinafter, X-direction galvanomirror), a galvanomirror for Y-axis deflection (hereinafter, Y-direction galvanomirror), 16a, 16b is a CCD line sensor for capturing in the X-axis direction (hereinafter referred to as X-direction CCD line sensor), a CCD line sensor for capturing in the Y-axis direction (hereinafter referred to as Y-direction CCD line sensor),
  • Reference numeral 18 denotes an objective lens and an imaging lens which are lens means, respectively.
  • Reference numeral 19 denotes an optical axis group deflected by the galvanomirror 15. The entire area of the semiconductor chip 1 to be inspected is recovered by the X and Y direction galvanomirrors 15a and 15b.
  • Reference numeral 20 denotes oblique illumination as illumination means, which is provided between the semiconductor chip 1 and the objective lens 1.
  • 2 1 is epi-illumination, which is also the illumination means, X,
  • the Y-direction galvanometer mirrors 15a and 15b are installed so as to be incident from between the imaging lens 18 and the imaging lens 18.
  • 22 and 23 are optical axis branching mirror groups.
  • An image processing unit 26 is an illumination control unit for controlling the amount of light of the oblique illumination 20 and the epi-illumination 21 and switching the illumination, and 27 is an overall control unit for controlling the entire system.
  • FIG. 2 is a schematic view of a semiconductor chip for explaining the effect of the image capturing method according to the first embodiment of the present invention
  • FIG. 3 is an effect of the image capturing method according to the first embodiment of the present invention
  • FIG. 4 is a principle diagram of an optical system for explaining an image capturing method according to the first embodiment of the present invention.
  • the X and Y direction galvanometer mirrors 15a and 15b are adjusted so that the optical axis is aligned with the reference position 28a. Drive and position.
  • the image of the region 29a of the semiconductor chip 1 is formed by the objective lens 19, the X and Y galvano mirrors 15a and 15b, the half mirror 22, the imaging lens 18 and the mirror group 23 for optical axis branching.
  • the image is formed on the CCD line sensor 16a in the X direction.
  • the Y direction CCD line sensor 16b is not used when capturing an image in which the X direction is horizontally long as in the area 29a.
  • the X-direction line sensor 16a passes over the reference position 28a Image data for one line in the X-axis direction is captured. Therefore, in order to capture the image data of the rectangular area indicated by 29 a, as shown in FIG. 4, as shown in FIG.
  • the galvano mirror Y 15 b is driven by a distance corresponding to the imaging size (aZn) corresponding to the size of one element of the X-direction line sensor 16 a.
  • the galvanomirror Y 1 has the number of lines required to measure the ball 11 1 while synchronizing with the X-direction line sensor 16 a taking in the image data.
  • 5b is driven to form two-dimensional image data of the rectangular area 29a in the image processing unit 25.
  • FIG. 3 shows an example of the image area 30 of the pole 11 taken in the above procedure.
  • the element of the X-direction line sensor 16a is composed of 5000 pixels per line and captured with a resolution of about 2 im per pixel, an image with a size of about 1 Omm in the line direction (X direction)
  • the galvanomirror 15b is sufficient to drive the galvanomirror 15b in the Y direction only for the required number of lines in the Y direction, for example, for 150 lines if 0.3 mm is required in the Y direction.
  • the oblique angle is set so as to realize the optimum imaging state for the stitch 13 as in the case of the ball 11 measurement.
  • the image of the part is passed through the objective lens 19, the X and Y direction galvanometer mirrors 15a and 15b, the half mirror 22, the imaging lens 18 and the optical axis branching mirror group 23 and the Y direction line.
  • the X-direction line sensor 16a is not used when capturing an image that is horizontally long in the Y direction as in the area 29b.
  • the CCD line sensor Y16b captures image data one line at a time, and Two-dimensional image data of a rectangular area 29 b is formed in the processing unit 25.
  • the inspection time by the above method is, for example, about 40 seconds per chip for inspecting all the items of a 200-pin semiconductor chip.
  • the epi-illumination 21 when installed so as to be incident from between the X and Y galvanometer mirrors 15 a and 15 b and the imaging lens 18 via the optical axis branching mirror 22.
  • the optical axis splitting mirror 22 is installed between the imaging lens 18 and the optical axis splitting mirror 23, and is incident from between the imaging lens 18 and the optical axis splitting mirror 23.
  • a similar effect can be obtained in lighting.
  • the galvanomies in the X and Y directions are respectively used.
  • La 15a, 15b, X, Y direction line sensors 16a, 16b were used separately.
  • the X-direction landscape image like 29a was taken, and the 29a image was taken.
  • parallel processing of image capture and image data analysis such as capture of a landscape image in the Y-direction such as 29b during data analysis, is possible. By performing the two types of processing in parallel in this manner, the inspection time can be further reduced.
  • the Y-direction line sensor 16b can also be driven in the X direction orthogonal to its own sensor array, it can be applied to image capture of rectangular areas that are horizontally long in the Y-axis direction, such as area 29b. it can.
  • the X- and Y-direction line sensors 16a and 16b which are the imaging means, also have the optical axis deflection switching function.
  • the semiconductor chip 1 that requires a horizontally long inspection area in both XY directions, such as the areas 29a and 29b, has been described.
  • X or For semiconductor chip 1 requiring only horizontally long inspection area in one direction Y In this case, the present invention can be applied.
  • the Y direction line sensor 16b is unnecessary in FIG.
  • the present invention is configured as described above, and has the following effects.
  • a semiconductor device inspection apparatus that performs an appearance inspection of a wire bonded to a pad of a semiconductor chip and a lead of a lead frame is provided.
  • the image of the target area to be captured can be captured by the imaging unit that captures the optical image obtained from the lens unit, and it is not necessary to separately provide a driving unit on the lens unit or the object mounting table.
  • high-speed positioning can be performed by using the galvanomirror for the optical axis deflection switching means, and the target image data on the object can be obtained by the aforementioned method. It becomes possible to take in the image pickup means.
  • the semiconductor device inspection apparatus of the third configuration of the present invention by using the CCD line sensor as the imaging means, it is possible to capture high-resolution and wide-field image data into the imaging means. It becomes possible.
  • the semiconductor device inspection apparatus of the fourth configuration of the present invention while synchronizing with the video capturing timing of the imaging means, the drive system of the optical axis deflection switching means is provided with the above-mentioned line every time the video is captured.
  • Sensor element size equivalent High-speed positioning can be performed by giving a moving speed corresponding to the imaging size of, and the target image data on the object can be taken into the imaging means and developed into a wide-field, high-resolution two-dimensional image. Yes.
  • the semiconductor device inspection apparatus of the fifth configuration of the present invention by limiting the driving points of the optical axis deflection switching means, it is possible to capture image data of a rectangular area only at a necessary portion into the imaging means. As a result, high-speed image capture is possible without the need for imaging processing of parts unnecessary for measurement.
  • the semiconductor device inspection apparatus of the sixth configuration of the present invention by arranging two sets of the optical axis deflection switching means and the imaging means for scanning in the X and Y axis directions, Efficient image capture according to the shape becomes possible.
  • the image pickup means is connected to the drive means, and the image pickup means is connected to the drive means while synchronizing with the image pickup timing of the image pickup means.
  • the image pickup unit By providing a moving speed corresponding to the image size corresponding to the size of the licensor element and driving the image pickup unit itself, the image pickup unit itself has an optical axis deflection switching function.
  • the replacement means it becomes possible to capture the target image data on the object into the imaging means and develop it into a two-dimensional image with a wide field of view and high resolution.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

Installation pour inspecter des dispositifs à semi-conducteurs. Cette installation est capable d'enregistrer des données image haute résolution à haute vitesse dans la région à inspecter. Un miroir galvanique (15) est utilisé comme moyen de commutation à déflexion d'axe optique, tandis qu'un détecteur CCD linéaire (16) est utilisé comme moyen de saisie d'image. Le miroir galvanique (15) est actionné en synchronisation avec l'opération de saisie d'image par le détecteur CCD (16) linéaire de manière à saisir uniquement l'image d'une zone rectangulaire nécessaire pour la mesure haute vitesse, à large champ de vision et à haute résolution. Cette installation ne comporte pas de commandes complémentaires pour les lentilles et la table de montage.
PCT/JP1998/001916 1997-04-25 1998-04-24 Installation pour inspecter des dispositifs a semi-conducteurs WO1998049521A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9109363A JPH10300441A (ja) 1997-04-25 1997-04-25 半導体検査装置
JP9/109363 1997-04-25

Publications (1)

Publication Number Publication Date
WO1998049521A1 true WO1998049521A1 (fr) 1998-11-05

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Application Number Title Priority Date Filing Date
PCT/JP1998/001916 WO1998049521A1 (fr) 1997-04-25 1998-04-24 Installation pour inspecter des dispositifs a semi-conducteurs

Country Status (2)

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JP (1) JPH10300441A (fr)
WO (1) WO1998049521A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107976445A (zh) * 2016-10-21 2018-05-01 上海交通大学 平面位置测量方法和系统

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001296253A (ja) * 2000-04-12 2001-10-26 Mitsubishi Electric Corp 半導体装置用検査装置及び半導体装置の検査方法
CN102944561B (zh) * 2012-11-16 2015-07-29 北京金橙子科技有限公司 一种矩阵式小器件的外观检测方法及装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05118820A (ja) * 1991-10-29 1993-05-14 Toshiba Corp 視覚認識装置
JPH06222012A (ja) * 1992-12-01 1994-08-12 Hitachi Ltd 画像処理装置及び画像処理方法及び半導体パッケージ外観検査装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05118820A (ja) * 1991-10-29 1993-05-14 Toshiba Corp 視覚認識装置
JPH06222012A (ja) * 1992-12-01 1994-08-12 Hitachi Ltd 画像処理装置及び画像処理方法及び半導体パッケージ外観検査装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107976445A (zh) * 2016-10-21 2018-05-01 上海交通大学 平面位置测量方法和系统
CN107976445B (zh) * 2016-10-21 2022-08-19 上海交通大学 平面位置测量方法和系统

Also Published As

Publication number Publication date
JPH10300441A (ja) 1998-11-13

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