WO1998045847A1 - Memorisation d'informations numeriques - Google Patents
Memorisation d'informations numeriques Download PDFInfo
- Publication number
- WO1998045847A1 WO1998045847A1 PCT/AU1998/000247 AU9800247W WO9845847A1 WO 1998045847 A1 WO1998045847 A1 WO 1998045847A1 AU 9800247 W AU9800247 W AU 9800247W WO 9845847 A1 WO9845847 A1 WO 9845847A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- amorphous carbon
- information storage
- digital information
- tetrahedral amorphous
- storage device
- Prior art date
Links
- 238000003860 storage Methods 0.000 title claims abstract description 35
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 31
- 239000003990 capacitor Substances 0.000 claims abstract description 6
- 230000008859 change Effects 0.000 claims abstract description 5
- 230000002441 reversible effect Effects 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 2
- 230000015654 memory Effects 0.000 abstract description 25
- 239000000463 material Substances 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000003446 memory effect Effects 0.000 abstract description 4
- 238000003491 array Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000007787 long-term memory Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000000541 cathodic arc deposition Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001683 neutron diffraction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/28—Other inorganic materials
- C03C2217/282—Carbides, silicides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/151—Deposition methods from the vapour phase by vacuum evaporation
Definitions
- This invention flows from the application of a newly found property of tetrahedral amorphous carbon.
- the invention relates to a digital information storage device useful in a range of applications. In further aspects, it also relates to a writable medium.
- SRAM and DRAM represent the most common type of memory used in computers today.
- SRAM stores information by the operation of a logical element known as a. flip-flop, which is a combination of either four or six transistors in a circuit that can be in either of two states, each state representing either a logical '0' or a '1'.
- SRAM is extremely fast (with access times now better than 20 nS) but as it requires up to six transistors per bit, it does not have a high storage density, and is quite expensive to manufacture.
- DRAM stores information in the form of charge stored on a simple capacitor, accessed through a single transistor, and so is much cheaper and has a much higher storage density.
- SRAM and DRAM are volatile in that once power to the device is removed (either through power faihire or just switching the computer off) the information is lost. Additionally, both types of memoiy are susceptible to data loss due to ionising radiation, and so cannot be used in devices such as weapons or satellite systems.
- EEPROM devices work on the principal of storing charge either in a floating poly-silicon gate or floating insulator such as silicon nitride, just above the base of a MOS (metal-oxide-silicon) transistor. Charge is stored on the gate by applying a voltage across the oxide layer which isolates it from the channel of the MOS transistor, and the charge state can be read by measuring the turn-on voltage of the transistor. EEPROMs are much slower than either SRAM or DRAM with write times from several microseconds to milliseconds (depending on the desired memory retention).
- ferroelectric RAM (FERAM)
- SRAMs, DRAMs and EEPROMs record information electrostatically
- FERAM stores information in the electric polarisation direction of a thin ferroelectric film.
- FERAM have a similar device structure to DRAM with a ferroelectric capacitor accessed by a single transistor. Writing to the device is done by applying a voltage to the capacitor (which polarises the ferroelectric), and reading is done by applying a reverse voltage and measuring the current associated with the polarisation state of the device.
- FERAMs are expected to have memory retention times of potentially hundreds of years, and have speeds comparable to current DRAMs. While FERAMs should have higher memory densities than SRAMs, due to material and design constraints, it is not expected to have densities as high as achievable with DRAM.
- Tetrahedral amorphous carbon is a thin film material fabricated in a magnetically filtered vacuum cathodic arc deposition system. It is deposited at room temperature and so can be coated onto virtually any surface including glass and most plastics, and its fabrication is relatively inexpensive, using pure graphite as a source material. Typical film thicknesses range from 10 to 100 nm. It has a hardness comparable to natural diamond and is a wide bandgap semiconductor with an electric bandgap of approximately 2.5 eN (c.f. crystalline silicon with a bandgap of 1.12 eN).
- Ta-C is naturally p-type and can be doped -n-type with the introduction of impurities such as nitrogen and phosphorous during the deposition process.
- the invention is a digital information storage device comprising a mass of tetrahedral amorphous carbon, where individual bits of data are stored in the form of reversible changes in both the resistance and small signal capacitance of respective regions of the tetrahedral amorphous carbon.
- Electrical means may be used to apply a localised electrical field, in excess of a threshold value, to the tetrahedral amorphous carbon in order to reversibly change both the resistance and small signal capacitance of regions of the tetrahedral amorphous carbon in order to store or delete bits of data.
- Electrical means may be used to apply a localised electrical field, in excess of a threshold value, to the tetrahedral amorphous carbon in order to detect changes is resistivity or dielectric constant, or both, of regions of the tetrahedral amorphous carbon in order to read bits of data stored within it.
- the mass of tetrahedral amorphous carbon is conveniently arranged in the form of a layer, the electrical means may be moveable over a surface of the layer in order to write or read data.
- the electrical means may comprise a fixed arrangement of conductors extending over a surface of the layer.
- the memory effect in ta-C was originally observed as a "kink” in the forward direction of the current-voltage (I-N) characteristic of nitrogen doped ta-C deposited onto thermally evaporated aluminium films on glass.
- the "kink” was noticed to disappear when the voltage was scanned in the opposite direction, from positive biases to negative biases.
- This effect is attributable to the storage of electrons with electronic defects, known as charge traps, within the ta-C.
- the principal advantage of using ta-C as a basis for digital information storage is its inherent cheapness, since it can be deposited very easily and cheaply over large areas.
- the material also has the potential for achieving higher storage densities than current non-volatile memories, and possibly higher than even DRAM.
- Memory arrays could be created simply by depositing a ta-C film in between perpendicular sets of conductive address lines, with a memory cell, or bit, at the intersections between crossing lines. By putting half the threshold voltage on one line of half on a crossing line each cell could be written or erased individually without significantly affecting neighbouring cells. Such memories have the potential to be fabricated without the need for access transistors for each cell.
- ta-C could be incorporated into existing DRAM device designs, achieving eq ial memory densities without the chance of soft errors, and with existing writing and sensing circuitry, but without the need for refreshing, and with significantly less susceptibility to errors induced by ionising radiation.
- ta-C devices could be used as the memory element for the pixels of a flat screen display. Their advantages would be the ability to deposit them directly onto the back of the screens, integrated into the fabrication of the pixel elements themselves. Apart for its low cost, ta-C has been found to be quite stable at relatively high temperatures, making it ideal in an environment which is potentially hazardous to other semiconducting materials.
- ta-C As well as the fabrication of discrete memory elements, there exists the potential to use ta-C as a cheap writable medium, that can be deposited onto virtually any surface, and is intrinsically scratch resistant; pure ta-C has a hardness approaching diamond.
- writable media in current use utilise the magnetisation of ferromagnetic coatings on disks, tapes, and other surfaces. This requires the use of electromagnetic coils for reading and writing, which on the scale of microelectronic components, are extremely large, and so restrict the ultimate information densities that can be achieved. Coatings of ta-C on the other hand, may be written electrostatically with a simple point contact many orders smaller than the write head of magnetic media.
- a DRAM cell could be constructed having tetrahedral amorphous carbon used in place of the storage capacitor dielectric. This cell has the benefit of isolation with an access transistor.
- Figure 1 is a pictorial diagram of a digital information storage device embodying the present invention.
- Figure 2 is the current voltage characteristic of the device of figure 1.
- Digital information storage device 1 comprises any number of layers of tetrahedral amorphous carbon 2, each one deposited between sets of aluminium address lines 3 and 4.
- the aluminium address lines 3/4 above each layer are perpendicular to the address lines 4/3 below each layer.
- the layers are around 80 nanometres thick as indicated, but the figure is not drawn to scale in horizontal direction.
- a memory cell, or bit, is created at the intersection of each crossover between lines 3 and 4.
- half a threshold voltage +VJ2 is put on one of the address lines 3, and half the threshold voltage -V ( /2 is put on one of the cross lines 4.
- the voltage is sufficiently high to change both the resistance and the small signal capacitance in the region of ta-C between the two crossings, but is not expected to significantly affect the material elsewhere.
- the change in resistivity and the dielectric constant is achieved by storing charge within what is believed to be electronic defects with the ta-C; these defects are "charge traps" or "donor traps". Referring to figure 2, the effect can be seen electronically as a kink 5 in the forward (increasing voltage) characteristic 6, which disappears in the reverse characteristic 7. Before the application of any bias voltage these donor traps are occupied by electrons.
- the traps are extremely localised and so the electrons held in them are rendered immobile, and thus unable to conduct current.
- a reverse bias voltage is applied to the device, the electrons are excited out of these traps and into the conduction band of the material. Once in the conduction band they are free to move and therefore conduct electricity. De- excitation of these electrons seems to occur at an extremely slow rate (of the order of months to years), unless a certain forward threshold voltage is applied, by which they de-excite very rapidly. This accounts for the kink observed in the I-N characteristic - as the previously excited electrons de- excite from the conduction band, the conductivity of the device will drop, causing a drop in the current, forming the observed kink.
- the stored charge can be detected during readout, and it can be obliterated by applying the reverse potential in order to clear the memory.
- the tetrahedral amorphous carbon can be deposited on a very large number of substrates to provide memory which can be electrostatically written to and read. It therefore has the potential to replace magnetic swipes and to form storage media such as read only disks.
- numerous variations and/or modifications may be made to the invention as shown in the specific embodiments without departing from the spirit or scope of the invention as broadly described. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive.
- Tetrahedral amorphous carbon or (ta-C) is a diamond-like form of carbon with electrical and physical properties (such as semi-conductivity and extreme hardness) approaching those of crystalline diamond. It is an amorphous network of carbon atoms which are predominantly bonded
- Ta-C can be fabricated by a number of thin film deposition techniques involving energetic ion bombardment (with ion energies in the range 20 eV-500 eN), such as filtered cathodic vacuum arc, laser ablation, and ion assisted magnetron sputtering.
- Ta-C has a hardness comparable to diamond, and is a wide band-gap semiconductor with a mobility gap of approximately 2.5 eN 3"5 . It is naturally p-type (though only weakly so), and can be doped n-type with the introduction of impurities such as nitrogen and phosphorous during the deposition process " .
- Ta-C can be easily deposited over quite large areas onto virtually any surface including silicon, glass, and plastic. At present there is a limitation on the thickness of as deposited ta-C films that can be achieved (60-100 nm) owing to the presence of relatively high film stresses (>4 GPa). These, however, appear to be significantly reduced by n-type doping and with the introduction of boron (which does not seem to act as a dopant in a ta-C) during the deposition process 9 .
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU68136/98A AU733537B2 (en) | 1997-04-09 | 1998-04-09 | Digital information storage |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AUPO6137A AUPO613797A0 (en) | 1997-04-09 | 1997-04-09 | Digital information storage |
AUPO6137 | 1997-04-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998045847A1 true WO1998045847A1 (fr) | 1998-10-15 |
Family
ID=3800434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/AU1998/000247 WO1998045847A1 (fr) | 1997-04-09 | 1998-04-09 | Memorisation d'informations numeriques |
Country Status (2)
Country | Link |
---|---|
AU (1) | AUPO613797A0 (fr) |
WO (1) | WO1998045847A1 (fr) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000066506A1 (fr) * | 1999-05-03 | 2000-11-09 | Guardian Industries Corporation | Verre revetu de carbone amorphe fortement tetraedrique |
US6273488B1 (en) | 1999-05-03 | 2001-08-14 | Guardian Industries Corporation | System and method for removing liquid from rear window of a vehicle |
US6338901B1 (en) | 1999-05-03 | 2002-01-15 | Guardian Industries Corporation | Hydrophobic coating including DLC on substrate |
GB2417490A (en) * | 2004-08-27 | 2006-03-01 | Nanofilm Technologies Int | Tetrahedral amorphous carbon coating with pre-determined resistivity |
EP1892722A1 (fr) * | 2006-08-25 | 2008-02-27 | Infineon Technologies AG | Eléments de stockage d'informations et leurs procédés de fabrication |
WO2009064842A1 (fr) * | 2007-11-13 | 2009-05-22 | William Marsh Rice Unvirsity | Composants électroniques empilés verticalement comportant des films de carbone conducteur |
US7768016B2 (en) | 2008-02-11 | 2010-08-03 | Qimonda Ag | Carbon diode array for resistivity changing memories |
US7894253B2 (en) | 2006-10-27 | 2011-02-22 | Qimonda Ag | Carbon filament memory and fabrication method |
US7915603B2 (en) | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
US8030637B2 (en) | 2006-08-25 | 2011-10-04 | Qimonda Ag | Memory element using reversible switching between SP2 and SP3 hybridized carbon |
US8110476B2 (en) | 2008-04-11 | 2012-02-07 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8298891B1 (en) | 2009-08-14 | 2012-10-30 | Intermolecular, Inc. | Resistive-switching memory element |
US8440467B2 (en) | 2007-09-28 | 2013-05-14 | William Marsh Rice University | Electronic switching, memory, and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials |
US8557685B2 (en) | 2008-08-07 | 2013-10-15 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU6531480A (en) * | 1979-12-13 | 1981-06-18 | Energy Conversion Devices Inc. | Programmable cell for electronic array |
US4366614A (en) * | 1980-03-24 | 1983-01-04 | Commissariat A L'energie Atomique | Method for constructing devices with a storage action and having amorphous semiconductors |
US5294518A (en) * | 1992-05-01 | 1994-03-15 | International Business Machines Corporation | Amorphous write-read optical storage memory |
WO1997045834A1 (fr) * | 1996-05-31 | 1997-12-04 | Akashic Memories Corporation | Supports d'enregistrement presentant des revetements de protection en carbone amorphe fortement tetrahedrique et leurs procedes de fabrication |
-
1997
- 1997-04-09 AU AUPO6137A patent/AUPO613797A0/en not_active Abandoned
-
1998
- 1998-04-09 WO PCT/AU1998/000247 patent/WO1998045847A1/fr active IP Right Grant
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU6531480A (en) * | 1979-12-13 | 1981-06-18 | Energy Conversion Devices Inc. | Programmable cell for electronic array |
US4599705A (en) * | 1979-12-13 | 1986-07-08 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
US4366614A (en) * | 1980-03-24 | 1983-01-04 | Commissariat A L'energie Atomique | Method for constructing devices with a storage action and having amorphous semiconductors |
US5294518A (en) * | 1992-05-01 | 1994-03-15 | International Business Machines Corporation | Amorphous write-read optical storage memory |
US5440507A (en) * | 1992-05-01 | 1995-08-08 | International Business Machines Corporation | Diamond-like carbon write-read optical storage memory |
WO1997045834A1 (fr) * | 1996-05-31 | 1997-12-04 | Akashic Memories Corporation | Supports d'enregistrement presentant des revetements de protection en carbone amorphe fortement tetrahedrique et leurs procedes de fabrication |
WO1997045855A1 (fr) * | 1996-05-31 | 1997-12-04 | Akashic Memories Corporation | Couches de carbone amorphe fortement tetrahedrique et procedes de fabrication desdits materiaux |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6273488B1 (en) | 1999-05-03 | 2001-08-14 | Guardian Industries Corporation | System and method for removing liquid from rear window of a vehicle |
US6303226B2 (en) | 1999-05-03 | 2001-10-16 | Guardian Industries Corporation | Highly tetrahedral amorphous carbon coating on glass |
US6338901B1 (en) | 1999-05-03 | 2002-01-15 | Guardian Industries Corporation | Hydrophobic coating including DLC on substrate |
US6340192B2 (en) | 1999-05-03 | 2002-01-22 | Guardian Industries Corporation | System and method for removing liquid from rear window of vehicle |
US6395333B2 (en) | 1999-05-03 | 2002-05-28 | Guardian Industries Corp. | Method of making hydrophobic coated article |
US6592993B2 (en) | 1999-05-03 | 2003-07-15 | Guardian Industries Corp. | Coated article with DLC inclusive layer(s) having increased hydrogen content at surface area |
EP1338576A1 (fr) * | 1999-05-03 | 2003-08-27 | Guardian Industries Corp. | Verre revêtu de carbone amorphe fortement tetraedrique |
WO2000066506A1 (fr) * | 1999-05-03 | 2000-11-09 | Guardian Industries Corporation | Verre revetu de carbone amorphe fortement tetraedrique |
GB2417490A (en) * | 2004-08-27 | 2006-03-01 | Nanofilm Technologies Int | Tetrahedral amorphous carbon coating with pre-determined resistivity |
US8030637B2 (en) | 2006-08-25 | 2011-10-04 | Qimonda Ag | Memory element using reversible switching between SP2 and SP3 hybridized carbon |
EP1892722A1 (fr) * | 2006-08-25 | 2008-02-27 | Infineon Technologies AG | Eléments de stockage d'informations et leurs procédés de fabrication |
US8097872B2 (en) | 2006-10-27 | 2012-01-17 | Rising Silicon, Inc. | Modifiable gate stack memory element |
US7894253B2 (en) | 2006-10-27 | 2011-02-22 | Qimonda Ag | Carbon filament memory and fabrication method |
US7915603B2 (en) | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
US8440467B2 (en) | 2007-09-28 | 2013-05-14 | William Marsh Rice University | Electronic switching, memory, and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials |
WO2009064842A1 (fr) * | 2007-11-13 | 2009-05-22 | William Marsh Rice Unvirsity | Composants électroniques empilés verticalement comportant des films de carbone conducteur |
US8395901B2 (en) | 2007-11-13 | 2013-03-12 | William Marsh Rice University | Vertically-stacked electronic devices having conductive carbon films |
US7768016B2 (en) | 2008-02-11 | 2010-08-03 | Qimonda Ag | Carbon diode array for resistivity changing memories |
US8110476B2 (en) | 2008-04-11 | 2012-02-07 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8536015B2 (en) | 2008-04-11 | 2013-09-17 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8557685B2 (en) | 2008-08-07 | 2013-10-15 | Sandisk 3D Llc | Memory cell that includes a carbon-based memory element and methods of forming the same |
US8298891B1 (en) | 2009-08-14 | 2012-10-30 | Intermolecular, Inc. | Resistive-switching memory element |
Also Published As
Publication number | Publication date |
---|---|
AUPO613797A0 (en) | 1997-05-08 |
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