WO1998045847A1 - Memorisation d'informations numeriques - Google Patents

Memorisation d'informations numeriques Download PDF

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Publication number
WO1998045847A1
WO1998045847A1 PCT/AU1998/000247 AU9800247W WO9845847A1 WO 1998045847 A1 WO1998045847 A1 WO 1998045847A1 AU 9800247 W AU9800247 W AU 9800247W WO 9845847 A1 WO9845847 A1 WO 9845847A1
Authority
WO
WIPO (PCT)
Prior art keywords
amorphous carbon
information storage
digital information
tetrahedral amorphous
storage device
Prior art date
Application number
PCT/AU1998/000247
Other languages
English (en)
Inventor
Edmund Glenn Gerstner
Original Assignee
The University Of Sydney
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The University Of Sydney filed Critical The University Of Sydney
Priority to AU68136/98A priority Critical patent/AU733537B2/en
Publication of WO1998045847A1 publication Critical patent/WO1998045847A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/151—Deposition methods from the vapour phase by vacuum evaporation

Definitions

  • This invention flows from the application of a newly found property of tetrahedral amorphous carbon.
  • the invention relates to a digital information storage device useful in a range of applications. In further aspects, it also relates to a writable medium.
  • SRAM and DRAM represent the most common type of memory used in computers today.
  • SRAM stores information by the operation of a logical element known as a. flip-flop, which is a combination of either four or six transistors in a circuit that can be in either of two states, each state representing either a logical '0' or a '1'.
  • SRAM is extremely fast (with access times now better than 20 nS) but as it requires up to six transistors per bit, it does not have a high storage density, and is quite expensive to manufacture.
  • DRAM stores information in the form of charge stored on a simple capacitor, accessed through a single transistor, and so is much cheaper and has a much higher storage density.
  • SRAM and DRAM are volatile in that once power to the device is removed (either through power faihire or just switching the computer off) the information is lost. Additionally, both types of memoiy are susceptible to data loss due to ionising radiation, and so cannot be used in devices such as weapons or satellite systems.
  • EEPROM devices work on the principal of storing charge either in a floating poly-silicon gate or floating insulator such as silicon nitride, just above the base of a MOS (metal-oxide-silicon) transistor. Charge is stored on the gate by applying a voltage across the oxide layer which isolates it from the channel of the MOS transistor, and the charge state can be read by measuring the turn-on voltage of the transistor. EEPROMs are much slower than either SRAM or DRAM with write times from several microseconds to milliseconds (depending on the desired memory retention).
  • ferroelectric RAM (FERAM)
  • SRAMs, DRAMs and EEPROMs record information electrostatically
  • FERAM stores information in the electric polarisation direction of a thin ferroelectric film.
  • FERAM have a similar device structure to DRAM with a ferroelectric capacitor accessed by a single transistor. Writing to the device is done by applying a voltage to the capacitor (which polarises the ferroelectric), and reading is done by applying a reverse voltage and measuring the current associated with the polarisation state of the device.
  • FERAMs are expected to have memory retention times of potentially hundreds of years, and have speeds comparable to current DRAMs. While FERAMs should have higher memory densities than SRAMs, due to material and design constraints, it is not expected to have densities as high as achievable with DRAM.
  • Tetrahedral amorphous carbon is a thin film material fabricated in a magnetically filtered vacuum cathodic arc deposition system. It is deposited at room temperature and so can be coated onto virtually any surface including glass and most plastics, and its fabrication is relatively inexpensive, using pure graphite as a source material. Typical film thicknesses range from 10 to 100 nm. It has a hardness comparable to natural diamond and is a wide bandgap semiconductor with an electric bandgap of approximately 2.5 eN (c.f. crystalline silicon with a bandgap of 1.12 eN).
  • Ta-C is naturally p-type and can be doped -n-type with the introduction of impurities such as nitrogen and phosphorous during the deposition process.
  • the invention is a digital information storage device comprising a mass of tetrahedral amorphous carbon, where individual bits of data are stored in the form of reversible changes in both the resistance and small signal capacitance of respective regions of the tetrahedral amorphous carbon.
  • Electrical means may be used to apply a localised electrical field, in excess of a threshold value, to the tetrahedral amorphous carbon in order to reversibly change both the resistance and small signal capacitance of regions of the tetrahedral amorphous carbon in order to store or delete bits of data.
  • Electrical means may be used to apply a localised electrical field, in excess of a threshold value, to the tetrahedral amorphous carbon in order to detect changes is resistivity or dielectric constant, or both, of regions of the tetrahedral amorphous carbon in order to read bits of data stored within it.
  • the mass of tetrahedral amorphous carbon is conveniently arranged in the form of a layer, the electrical means may be moveable over a surface of the layer in order to write or read data.
  • the electrical means may comprise a fixed arrangement of conductors extending over a surface of the layer.
  • the memory effect in ta-C was originally observed as a "kink” in the forward direction of the current-voltage (I-N) characteristic of nitrogen doped ta-C deposited onto thermally evaporated aluminium films on glass.
  • the "kink” was noticed to disappear when the voltage was scanned in the opposite direction, from positive biases to negative biases.
  • This effect is attributable to the storage of electrons with electronic defects, known as charge traps, within the ta-C.
  • the principal advantage of using ta-C as a basis for digital information storage is its inherent cheapness, since it can be deposited very easily and cheaply over large areas.
  • the material also has the potential for achieving higher storage densities than current non-volatile memories, and possibly higher than even DRAM.
  • Memory arrays could be created simply by depositing a ta-C film in between perpendicular sets of conductive address lines, with a memory cell, or bit, at the intersections between crossing lines. By putting half the threshold voltage on one line of half on a crossing line each cell could be written or erased individually without significantly affecting neighbouring cells. Such memories have the potential to be fabricated without the need for access transistors for each cell.
  • ta-C could be incorporated into existing DRAM device designs, achieving eq ial memory densities without the chance of soft errors, and with existing writing and sensing circuitry, but without the need for refreshing, and with significantly less susceptibility to errors induced by ionising radiation.
  • ta-C devices could be used as the memory element for the pixels of a flat screen display. Their advantages would be the ability to deposit them directly onto the back of the screens, integrated into the fabrication of the pixel elements themselves. Apart for its low cost, ta-C has been found to be quite stable at relatively high temperatures, making it ideal in an environment which is potentially hazardous to other semiconducting materials.
  • ta-C As well as the fabrication of discrete memory elements, there exists the potential to use ta-C as a cheap writable medium, that can be deposited onto virtually any surface, and is intrinsically scratch resistant; pure ta-C has a hardness approaching diamond.
  • writable media in current use utilise the magnetisation of ferromagnetic coatings on disks, tapes, and other surfaces. This requires the use of electromagnetic coils for reading and writing, which on the scale of microelectronic components, are extremely large, and so restrict the ultimate information densities that can be achieved. Coatings of ta-C on the other hand, may be written electrostatically with a simple point contact many orders smaller than the write head of magnetic media.
  • a DRAM cell could be constructed having tetrahedral amorphous carbon used in place of the storage capacitor dielectric. This cell has the benefit of isolation with an access transistor.
  • Figure 1 is a pictorial diagram of a digital information storage device embodying the present invention.
  • Figure 2 is the current voltage characteristic of the device of figure 1.
  • Digital information storage device 1 comprises any number of layers of tetrahedral amorphous carbon 2, each one deposited between sets of aluminium address lines 3 and 4.
  • the aluminium address lines 3/4 above each layer are perpendicular to the address lines 4/3 below each layer.
  • the layers are around 80 nanometres thick as indicated, but the figure is not drawn to scale in horizontal direction.
  • a memory cell, or bit, is created at the intersection of each crossover between lines 3 and 4.
  • half a threshold voltage +VJ2 is put on one of the address lines 3, and half the threshold voltage -V ( /2 is put on one of the cross lines 4.
  • the voltage is sufficiently high to change both the resistance and the small signal capacitance in the region of ta-C between the two crossings, but is not expected to significantly affect the material elsewhere.
  • the change in resistivity and the dielectric constant is achieved by storing charge within what is believed to be electronic defects with the ta-C; these defects are "charge traps" or "donor traps". Referring to figure 2, the effect can be seen electronically as a kink 5 in the forward (increasing voltage) characteristic 6, which disappears in the reverse characteristic 7. Before the application of any bias voltage these donor traps are occupied by electrons.
  • the traps are extremely localised and so the electrons held in them are rendered immobile, and thus unable to conduct current.
  • a reverse bias voltage is applied to the device, the electrons are excited out of these traps and into the conduction band of the material. Once in the conduction band they are free to move and therefore conduct electricity. De- excitation of these electrons seems to occur at an extremely slow rate (of the order of months to years), unless a certain forward threshold voltage is applied, by which they de-excite very rapidly. This accounts for the kink observed in the I-N characteristic - as the previously excited electrons de- excite from the conduction band, the conductivity of the device will drop, causing a drop in the current, forming the observed kink.
  • the stored charge can be detected during readout, and it can be obliterated by applying the reverse potential in order to clear the memory.
  • the tetrahedral amorphous carbon can be deposited on a very large number of substrates to provide memory which can be electrostatically written to and read. It therefore has the potential to replace magnetic swipes and to form storage media such as read only disks.
  • numerous variations and/or modifications may be made to the invention as shown in the specific embodiments without departing from the spirit or scope of the invention as broadly described. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive.
  • Tetrahedral amorphous carbon or (ta-C) is a diamond-like form of carbon with electrical and physical properties (such as semi-conductivity and extreme hardness) approaching those of crystalline diamond. It is an amorphous network of carbon atoms which are predominantly bonded
  • Ta-C can be fabricated by a number of thin film deposition techniques involving energetic ion bombardment (with ion energies in the range 20 eV-500 eN), such as filtered cathodic vacuum arc, laser ablation, and ion assisted magnetron sputtering.
  • Ta-C has a hardness comparable to diamond, and is a wide band-gap semiconductor with a mobility gap of approximately 2.5 eN 3"5 . It is naturally p-type (though only weakly so), and can be doped n-type with the introduction of impurities such as nitrogen and phosphorous during the deposition process " .
  • Ta-C can be easily deposited over quite large areas onto virtually any surface including silicon, glass, and plastic. At present there is a limitation on the thickness of as deposited ta-C films that can be achieved (60-100 nm) owing to the presence of relatively high film stresses (>4 GPa). These, however, appear to be significantly reduced by n-type doping and with the introduction of boron (which does not seem to act as a dopant in a ta-C) during the deposition process 9 .

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention dérive de l'application d'une nouvelle propriété du carbone tétraédrique amorphe. L'invention concerne un dispositif de mémorisation d'informations numériques utile pour différentes applications et un support inscriptible. L'invention se sert d'une couche de carbone tétraédrique amorphe et d'unités électriques mobiles les unes par rapport aux autres. Les unités électriques servent à changer de manière réversible la résistance et la faible capacité des signaux du dispositif à carbone tétraédrique amorphe dans la région adjacente à l'unité électrique. L'avantage principal que présente l'utilisation de ta-C comme base pour la mémorisation d'informations numériques est lié à son prix intrinsèque très modéré, étant donné qu'il peut être déposé très facilement et à bon prix sur de vastes zones. Le matériau peut aussi assurer des densités de mémorisation plus élevées que les mémoires rémanentes actuelles, voire même plus élevées que les mémoires DRAM. En termes de conception, les mémoires ta-C peuvent être fabriquées sans avoir recours à un transistor d'accès. Dans cette configuration, les réseaux de mémoire pourraient être créés par un simple dépôt de film ta-C entre des ensembles perpendiculaires de lignes d'adresses conductrices, avec une cellule de mémoire ou un bit à l'intersection de lignes de croisement. Le ta-C pourrait aussi remplacer le diélectrique de condensateur de mémorisation dans une configuration de cellule DRAM de façon à assurer une mémorisation à long terme grâce à l'effet de mémoire ta-C et à éviter des erreurs temporaires au moyen d'un transistor d'accès d'isolement. Selon une autre variante, il est possible d'écrire électrostatiquement sur le support à l'aide d'un contact ponctuel unique ou de plusieurs contacts ponctuels en parallèle.
PCT/AU1998/000247 1997-04-09 1998-04-09 Memorisation d'informations numeriques WO1998045847A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU68136/98A AU733537B2 (en) 1997-04-09 1998-04-09 Digital information storage

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPO6137A AUPO613797A0 (en) 1997-04-09 1997-04-09 Digital information storage
AUPO6137 1997-04-09

Publications (1)

Publication Number Publication Date
WO1998045847A1 true WO1998045847A1 (fr) 1998-10-15

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AU (1) AUPO613797A0 (fr)
WO (1) WO1998045847A1 (fr)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000066506A1 (fr) * 1999-05-03 2000-11-09 Guardian Industries Corporation Verre revetu de carbone amorphe fortement tetraedrique
US6273488B1 (en) 1999-05-03 2001-08-14 Guardian Industries Corporation System and method for removing liquid from rear window of a vehicle
US6338901B1 (en) 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
GB2417490A (en) * 2004-08-27 2006-03-01 Nanofilm Technologies Int Tetrahedral amorphous carbon coating with pre-determined resistivity
EP1892722A1 (fr) * 2006-08-25 2008-02-27 Infineon Technologies AG Eléments de stockage d'informations et leurs procédés de fabrication
WO2009064842A1 (fr) * 2007-11-13 2009-05-22 William Marsh Rice Unvirsity Composants électroniques empilés verticalement comportant des films de carbone conducteur
US7768016B2 (en) 2008-02-11 2010-08-03 Qimonda Ag Carbon diode array for resistivity changing memories
US7894253B2 (en) 2006-10-27 2011-02-22 Qimonda Ag Carbon filament memory and fabrication method
US7915603B2 (en) 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
US8030637B2 (en) 2006-08-25 2011-10-04 Qimonda Ag Memory element using reversible switching between SP2 and SP3 hybridized carbon
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8298891B1 (en) 2009-08-14 2012-10-30 Intermolecular, Inc. Resistive-switching memory element
US8440467B2 (en) 2007-09-28 2013-05-14 William Marsh Rice University Electronic switching, memory, and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials
US8557685B2 (en) 2008-08-07 2013-10-15 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU6531480A (en) * 1979-12-13 1981-06-18 Energy Conversion Devices Inc. Programmable cell for electronic array
US4366614A (en) * 1980-03-24 1983-01-04 Commissariat A L'energie Atomique Method for constructing devices with a storage action and having amorphous semiconductors
US5294518A (en) * 1992-05-01 1994-03-15 International Business Machines Corporation Amorphous write-read optical storage memory
WO1997045834A1 (fr) * 1996-05-31 1997-12-04 Akashic Memories Corporation Supports d'enregistrement presentant des revetements de protection en carbone amorphe fortement tetrahedrique et leurs procedes de fabrication

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU6531480A (en) * 1979-12-13 1981-06-18 Energy Conversion Devices Inc. Programmable cell for electronic array
US4599705A (en) * 1979-12-13 1986-07-08 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
US4366614A (en) * 1980-03-24 1983-01-04 Commissariat A L'energie Atomique Method for constructing devices with a storage action and having amorphous semiconductors
US5294518A (en) * 1992-05-01 1994-03-15 International Business Machines Corporation Amorphous write-read optical storage memory
US5440507A (en) * 1992-05-01 1995-08-08 International Business Machines Corporation Diamond-like carbon write-read optical storage memory
WO1997045834A1 (fr) * 1996-05-31 1997-12-04 Akashic Memories Corporation Supports d'enregistrement presentant des revetements de protection en carbone amorphe fortement tetrahedrique et leurs procedes de fabrication
WO1997045855A1 (fr) * 1996-05-31 1997-12-04 Akashic Memories Corporation Couches de carbone amorphe fortement tetrahedrique et procedes de fabrication desdits materiaux

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6273488B1 (en) 1999-05-03 2001-08-14 Guardian Industries Corporation System and method for removing liquid from rear window of a vehicle
US6303226B2 (en) 1999-05-03 2001-10-16 Guardian Industries Corporation Highly tetrahedral amorphous carbon coating on glass
US6338901B1 (en) 1999-05-03 2002-01-15 Guardian Industries Corporation Hydrophobic coating including DLC on substrate
US6340192B2 (en) 1999-05-03 2002-01-22 Guardian Industries Corporation System and method for removing liquid from rear window of vehicle
US6395333B2 (en) 1999-05-03 2002-05-28 Guardian Industries Corp. Method of making hydrophobic coated article
US6592993B2 (en) 1999-05-03 2003-07-15 Guardian Industries Corp. Coated article with DLC inclusive layer(s) having increased hydrogen content at surface area
EP1338576A1 (fr) * 1999-05-03 2003-08-27 Guardian Industries Corp. Verre revêtu de carbone amorphe fortement tetraedrique
WO2000066506A1 (fr) * 1999-05-03 2000-11-09 Guardian Industries Corporation Verre revetu de carbone amorphe fortement tetraedrique
GB2417490A (en) * 2004-08-27 2006-03-01 Nanofilm Technologies Int Tetrahedral amorphous carbon coating with pre-determined resistivity
US8030637B2 (en) 2006-08-25 2011-10-04 Qimonda Ag Memory element using reversible switching between SP2 and SP3 hybridized carbon
EP1892722A1 (fr) * 2006-08-25 2008-02-27 Infineon Technologies AG Eléments de stockage d'informations et leurs procédés de fabrication
US8097872B2 (en) 2006-10-27 2012-01-17 Rising Silicon, Inc. Modifiable gate stack memory element
US7894253B2 (en) 2006-10-27 2011-02-22 Qimonda Ag Carbon filament memory and fabrication method
US7915603B2 (en) 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
US8440467B2 (en) 2007-09-28 2013-05-14 William Marsh Rice University Electronic switching, memory, and sensor devices from a discontinuous graphene and/or graphite carbon layer on dielectric materials
WO2009064842A1 (fr) * 2007-11-13 2009-05-22 William Marsh Rice Unvirsity Composants électroniques empilés verticalement comportant des films de carbone conducteur
US8395901B2 (en) 2007-11-13 2013-03-12 William Marsh Rice University Vertically-stacked electronic devices having conductive carbon films
US7768016B2 (en) 2008-02-11 2010-08-03 Qimonda Ag Carbon diode array for resistivity changing memories
US8110476B2 (en) 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8536015B2 (en) 2008-04-11 2013-09-17 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8557685B2 (en) 2008-08-07 2013-10-15 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
US8298891B1 (en) 2009-08-14 2012-10-30 Intermolecular, Inc. Resistive-switching memory element

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