WO1998036888A1 - Aerosol method and apparatus, particulate products, and electronic devices made therefrom - Google Patents
Aerosol method and apparatus, particulate products, and electronic devices made therefrom Download PDFInfo
- Publication number
- WO1998036888A1 WO1998036888A1 PCT/US1998/003530 US9803530W WO9836888A1 WO 1998036888 A1 WO1998036888 A1 WO 1998036888A1 US 9803530 W US9803530 W US 9803530W WO 9836888 A1 WO9836888 A1 WO 9836888A1
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- Prior art keywords
- particles
- phase
- droplets
- aerosol
- material phase
- Prior art date
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Classifications
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Definitions
- the present invention involves aerosol production of finely-divided particles of a variety of compositions.
- the present invention also involves the particles so manufactured and electronic devices made using the particles.
- Powdered materials are used in many manufacturing processes.
- One large use for powders is for thick film deposition to prepare films of a variety of materials.
- Some thick film applications include, for example, deposition of phosphor materials for flat panel displays, and patterning of eclectically conductive features for electronic products.
- For thick film applications, and for other applications there is a trend to use powders of ever smaller particles.
- Generally desirable features in small particles include a small particle size; a narrow particle size distribution; a dense, spherical particle morphology; and a crystalline grain structure.
- Existing technologies for preparing powdered products often could be improved with respect to attaining all, or substantially all, of these desired features for particles used in thick film applications.
- One method that has been used to make small particles is to precipitate the particles from a liquid medium. Such liquid precipitation techniques are often difficult to control to produce particles with the desired characteristics. Also, particles prepared by liquid precipitation routes often are contaminated with significant quantities of surfactants or other organic materials used during the liquid phase processing.
- Aerosol methods have also been used to make a variety of small particles.
- One aerosol method for making small particles is spray pyrolysis, in which an aerosol spray is generated and then converted in a reactor to the desired particles.
- Spray pyrolysis systems have, however, been mostly experimental, and unsuitable for commercial particle production.
- control of particle size distribution is a concern with spray pyrolysis.
- spray pyrolysis systems are often inefficient in the use of carrier gases that suspend and carry liquid droplets of the aerosol. This inefficiency is a major consideration for commercial applications of spray pyrolysis systems.
- the present invention provides an aerosol process for manufacturing finely- divided powders of a variety of materials having desirable properties and at commercially acceptable rates. Apparatus is also provided for implementing the manufacturing method.
- An important aspect of the present invention is aerosol generation.
- An aerosol generator and aerosol generation method are provided that are capable of producing large quantities of a high quality, dense aerosol for spray pyrolysis operations. This is significantly different from aerosol generation that has previously occurred with respect to spray pyrolysis particle manufacture in small-scale, laboratory systems.
- An aerosol generator is provided including an array of ultrasonic transducers underlying a single reservoir of precursor solution that is ultrasonically energized to produce the aerosol. Careful distribution of carrier gas to different portions of the reservoir result in an efficient use of carrier gas in making a dense aerosol and at a high rate suitable for commercial applications.
- the process is versatile for preparing powders of a number of materials.
- An important group of powders prepared with the process of the present invention include multi-phase particles.
- multi-phase particles designed for use in manufacturing of electrically-conductive metallic films for electronic products.
- the multi-phase particles include a metallic phase and a non-metallic phase.
- the non-metallic phase comprises at least one of silica, alumina, titania and zirconia.
- the non- metallic phase includes a titanate, such as barium titanate, neodymium titanate or other titanates as discussed below.
- multi-phase particles of the present invention include those having a metallic phase and a non-metallic phase including elemental carbon. These multi-phase particles are useful as electrode materials and as catalysts.
- the present invention also provides electronic products including a dielectric layer adjoining an electrically conductive film that has been formed using multi-phase particles of the present invention, and especially using multi-phase particles including a titanate as the non-metallic phase.
- the electrically conductive film may be cofired with a titanate dielectric layer with improved compatibility between the layers, for reduced delaminations and other failures.
- Fig. 1 is a process block diagram showing one embodiment of the process of the present invention.
- Fig. 2 is a side view in cross section of one embodiment of aerosol generator of the present invention.
- Fig. 3 is a top view of a transducer mounting plate showing a 49 transducer array for use in an aerosol generator of the present invention.
- Fig. 4 is a top view of a transducer mounting plate for a 400 transducer array for use in an ultrasonic generator of the present invention.
- Fig. 5 is a side view of the transducer mounting plate shown in Fig. 4.
- Fig. 6 is a partial side view showing the profile of a single transducer mounting receptacle of the transducer mounting plate shown in Fig. 4.
- Fig. 7 is a partial side view in cross-section showing an alternative embodiment for mounting an ultrasonic transducer.
- Fig. 8 is a top view of a bottom retaining plate for retaining a separator for use in an aerosol generator of the present invention.
- Fig. 9 is a top view of a liquid feed box having a bottom retaining plate to assist in retaining a separator for use in an aerosol generator of the present invention.
- Fig. 10 is a side view of the liquid feed box shown in Fig. 9.
- Fig. 11 is a side view of a gas tube for delivering gas within an aerosol generator of the present invention.
- Fig. 12 shows a partial top view of gas tubes positioned in a liquid feed box for distributing gas relative to ultrasonic transducer positions for use in an aerosol generator of the present invention.
- Fig. 13 shows one embodiment for a gas distribution configuration for the aerosol generator of the present invention.
- Fig. 14 shows another embodiment for a gas distribution configuration for the aerosol generator of the present invention.
- Fig. 15 is a top view of one embodiment of a gas distribution plate/gas tube assembly of the aerosol generator of the present invention.
- Fig. 16 is a side view of one embodiment of the gas distribution plate/gas tube assembly shown in Fig. 15.
- Fig. 17 shows one embodiment for orienting a transducer in the aerosol generator of the present invention.
- Fig. 18 is a top view of a gas manifold for distributing gas within an aerosol generator of the present invention.
- Fig. 19 is a side view of the gas manifold shown in Fig. 18.
- Fig. 20 is a top view of a generator lid of a hood design for use in an aerosol generator of the present invention.
- Fig. 21 is a side view of the generator lid shown in Fig. 20.
- Fig. 22 is a process block diagram of one embodiment in the present invention including an aerosol concentrator.
- Fig. 23 is a top view in cross section of a virtual impactor that may be used for concentrating an aerosol according to the present invention.
- Fig. 24 is a front view of an upstream plate assembly of the virtual impactor shown in Fig. 23.
- Fig. 25 is a top view of the upstream plate assembly shown in Fig. 24.
- Fig. 26 is a side view of the upstream plate assembly shown in Fig. 24.
- Fig. 27 is a front view of a downstream plate assembly of the virtual impactor shown in Fig. 23.
- Fig. 28 is a top view of the downstream plate assembly shown in Fig. 27.
- Fig. 29 is a side view of the downstream plate assembly shown in Fig. 27. -
- Fig. 30 is a process block diagram of one embodiment of the process of the present invention including a droplet classifier.
- Fig. 31 is a top view in cross section of an impactor of the present invention for use in classifying an aerosol.
- Fig. 32 is a front view of a flow control plate of the impactor shown in Fig. 31.
- Fig. 33 is a front view of a mounting plate of the impactor shown in Fig. 31.
- Fig. 34 is a front view of an impactor plate assembly of the impactor shown in Fig. 31.
- Fig. 35 is a side view of the impactor plate assembly shown in Fig. 34.
- Fig. 36 shows a side view in cross section of a virtual impactor in combination with an impactor of the present invention for concentrating and classifying droplets in an aerosol.
- Fig. 37 is a process block diagram of one embodiment of the present invention including a particle cooler.
- Fig. 38 is a top view of a gas quench cooler of the present invention.
- Fig. 39 is an end view of the gas quench cooler shown in Fig. 38.
- Fig. 40 is a side view of a perforated conduit of the quench cooler shown in Fig. 38.
- Fig. 41 is a process block diagram of one embodiment of the present invention including a particle coater.
- Fig. 42 is a block diagram of one embodiment of the present invention including a particle modifier.
- Fig. 43 shows cross sections of various particle morphologies of some composite particles manufacturable according to the present invention.
- Fig. 44 shows a side view of one embodiment of apparatus of the present invention including an aerosol generator, an aerosol concentrator, a droplet classifier, a furnace, a particle cooler, and a particle collector.
- the present invention provides a method for preparing a particulate product.
- a feed of liquid-containing, flowable medium, including at least one precursor for the desired particulate product is converted to aerosol form, with droplets of the medium being dispersed in and suspended by a carrier gas. Liquid from the droplets in the aerosol is then removed to permit formation in a dispersed state of the desired particles.
- the feed precursor is pyrolyzed in a furnace to make the particles.
- the particles are subjected, while still in a dispersed state, to compositional or structural modification, if desired.
- Compositional modification may include, for example, coating the particles.
- Structural modification may include, for example, crystallization, recrystallization or morphological alteration of the particles.
- the term powder is often used herein to refer to the particulate product of the present invention. The use of the term powder does not indicate, however, that the particulate product must be dry or in any particular environment. Although the particulate product is typically manufactured in a dry state, the particulate product may, after manufacture, be placed in a wet environment, such as in a slurry.
- the process of the present invention is particularly well suited for the production of particulate products of finely divided particles having a weight average size, for most applications, in a range having a lower limit of about 0.1 micron, preferably about 0.3 micron, more preferably about 0.5 micron and most preferably about 0.8 micron; and having an upper limit of about 4 microns, preferably about 3 microns, more preferably about 2.5 microns and more preferably about 2 microns.
- a particularly preferred range for many applications is a weight average size of from about 0.5 micron to about 3 microns, and more particularly from about 0.5 micron to about 2 microns. For some applications, however, other weight average particle sizes may be particularly preferred.
- the particles may be produced with a desirably narrow size distribution, thereby providing size uniformity that is desired for many applications.
- the method of the present invention provides significant flexibility for producing particles of varying composition, crystallinity and morphology.
- the present invention may be used to produce homogeneous particles involving only a single phase or multi-phase particles including multiple phases.
- the phases may be present in a variety of morphologies. For example, one phase may be uniformly dispersed throughout a matrix of another phase. Alternatively, one phase may form an interior core while another phase forms a coating that surrounds the core. Other morphologies are also possible, as discussed more fully below.
- a liquid feed 102 including at least one precursor for the desired particles, and a carrier gas 104 are fed to an aerosol generator 106 where an aerosol 108 is produced.
- the aerosol 108 is then fed to a furnace 110 where liquid in the aerosol 108 is removed to produce particles 112 that are dispersed in and suspended by gas exiting the furnace 110.
- the particles 112 are then collected in a particle collector 114 to produce a particulate product 116.
- the liquid feed 102 is a feed that includes one or more flowable liquids as the major constituent(s), such that the feed is a flowable medium.
- the liquid feed 102 need not comprise only liquid constituents.
- the liquid feed 102 may comprise only constituents in one or more liquid phase, or it may also include particulate material suspended in a liquid phase.
- the liquid feed 102 must, however, be capable of being atomized to form droplets of sufficiently small size for preparation of the aerosol 108. Therefore, if the liquid feed 102 includes suspended particles, those particles should be relatively small in relation to the size of droplets in the aerosol 108.
- Such suspended particles should typically be smaller than about 1 micron in size, preferably smaller than about 0.5 micron in size, and more preferably smaller than about 0.3 micron in size and most preferably smaller than about 0.1 micron in size. Most preferably, the suspended particles should be able to form a colloid.
- the suspended particles could be finely divided particles, or could be agglomerate masses comprised of agglomerated smaller primary particles. For example, 0.5 micron particles could be agglomerates of nanometer-sized primary particles.
- the liquid feed 102 includes suspended particles, the particles typically comprise no greater than about 25 to 50 weight percent of the liquid feed. As noted, the liquid feed 102 includes at least one precursor for preparation of the particles 112.
- the precursor may be a substance in either a liquid or solid phase of the liquid feed 102. Frequently, the precursor will be a material, such as a salt, dissolved in a liquid solvent of the liquid feed 102. Typical precursor salts include nitrate, chloride, sulfate, acetate and oxalate salts, and the like.
- the precursor may undergo one or more chemical reactions in the furnace 110 to assist in production of the particles 112.
- the precursor material may contribute to formation of the particles 112 without undergoing chemical reaction. This could be the case, for example, when the liquid feed 102 includes, as a precursor material, suspended particles that are not chemically modified in the furnace 110.
- the particles 112 comprise at least one component originally contributed by the precursor.
- the liquid feed 102 may include multiple precursor materials, which may be present together in a single phase or separately in multiple phases.
- the liquid feed 102 may include multiple precursors in solution in a single liquid vehicle.
- one precursor material could be in a solid particulate phase and a second precursor material could be in a liquid phase.
- one precursor material could be in one liquid phase and a second precursor material could be in a second liquid phase, such as could be the case when the liquid feed 102 comprises an emulsion.
- Different components contributed by different precursors may be present in the particles together in a single material phase, or the different components may be present in different material phases when the particles 112 are composites of multiple phases.
- the precursor solution should be unsaturated to avoid the formation of precipitates.
- Solutions of salts will typically be used in concentrations in a range to provide a solution including from about 1 to about 50 weight percent solute. Most often, the liquid feed will include a solution with from about 5 weight percent to about 40 weight percent solute, and more preferably to about 30 weight percent solute.
- the solvent is aqueous-based for ease of operation, although other solvents, such as toluene or other organic solvents, may be desirable for specific materials. The use of organic solvents, however, can sometimes lead to undesirable carbon contamination in the particles.
- the pH of the aqueous-based solutions can be adjusted to alter the solubility characteristics of the precursor or precursors in the solution.
- the carrier gas 104 may comprise any gaseous medium in which droplets produced from the liquid feed 102 may be dispersed in aerosol form.
- the carrier gas 104 may be inert, in that the carrier gas 104 does not participate in formation of the particles 112.
- the carrier gas may have one or more active component(s) that contribute to formation of the particles 112.
- the carrier gas may include one or more reactive components that react in the furnace 110 to contribute to formation of the particles 112.
- the aerosol generator 106 atomizes the liquid feed 102 to form droplets in a manner to permit the carrier gas 104 to sweep the droplets away to form the aerosol 108.
- the droplets comprise liquid from the liquid feed 102.
- the droplets may, however, also include nonliquid material, such as one or more small particles held in the droplet by the liquid.
- nonliquid material such as one or more small particles held in the droplet by the liquid.
- the particles 112 are composite, or multi-phase, particles
- one phase of the composite may be provided in the liquid feed 102 in the form of suspended precursor particles and a second phase of the composite may be produced in the furnace 110 from one or more precursors in the liquid phase of the liquid feed 102.
- the precursor particles could be included in the liquid feed 102, and therefore also in droplets of the aerosol 108, for the purpose only of dispersing the particles for subsequent compositional or structural modification during or after processing in the furnace 110.
- An important aspect of the present invention is generation of the aerosol 108 with droplets of a small average size, narrow size distribution.
- the particles 112 may be produced at a desired small size with a narrow size distribution, which are advantageous for many applications.
- the aerosol generator 106 is capable of producing the aerosol 108 such that it includes droplets having a weight average size in a range having a lower limit of about 1 micron and preferably about 2 microns; and an upper limit of about 10 microns, preferably about 7 microns, more preferably about 5 microns and most preferably about 4 microns.
- a weight average droplet size in a range of from about 2 microns to about 4 microns is more preferred for most applications, with a weight average droplet size of about 3 microns being particularly preferred for some applications.
- the aerosol generator is also capable of producing the aerosol 108 such that it includes droplets in a narrow size distribution.
- the droplets in the aerosol are such that at least about 70 percent (more preferably at least about 80 weight percent and most preferably at least about 85 weight percent) of the droplets are smaller than about 10 microns and more preferably at least about 70 weight percent (more preferably at least about 80 weight percent and most preferably at least about 85 weight percent) are smaller than about 5 microns.
- the aerosol 108 may be generated without consuming excessive amounts of the carrier gas 104.
- the aerosol generator 106 is capable of producing the aerosol 108 such that it has a high loading, or high concentration, of the liquid feed 102 in droplet form.
- the aerosol 108 preferably includes greater than about 1 x 10 6 droplets per cubic centimeter of the aerosol 108, more preferably greater than about 5 x 10 6 droplets per cubic centimeter, still more preferably greater than about 1 x 10 7 droplets per cubic centimeter, and most preferably greater than about 5 x 10 7 droplets per cubic centimeter. That the aerosol generator 106 can produce such a heavily loaded aerosol 108 is particularly surprising considering the high quality of the aerosol 108 with respect to small average droplet size and narrow droplet size distribution.
- droplet loading in the aerosol is such that the volumetric ratio of liquid feed 102 to carrier gas 104 in the aerosol 108 is larger than about 0.04 milliliters of liquid feed 102 per liter of carrier gas 104 in the aerosol 108, preferably larger than about 0.083 milliliters of liquid feed 102 per liter of carrier gas 104 in the aerosol 108, more preferably larger than about 0.167 milliliters of liquid feed 102 per liter of carrier gas 104, still more preferably larger than about 0.25 milliliters of liquid feed 102 per liter of carrier gas 104, and most preferably larger than about 0.333 milliliters of liquid feed 102 per liter of carrier gas 104.
- the droplet loading is preferably larger than about 0.15 milliliters of aerosol feed 102 per liter of carrier gas 104, more preferably larger than about 0.2 milliliters of liquid feed 102 per liter of carrier gas 104, even more preferably larger than about 0.2 milliliters of liquid feed 102 per liter of carrier gas 104, and most preferably larger than about 0.3 milliliters of liquid feed 102 per liter of carrier gas 104.
- liters of carrier gas 104 it refers to the volume that the carrier gas 104 would occupy under conditions of standard temperature and pressure.
- the furnace 110 may be any suitable device for heating the aerosol 108 to evaporate liquid from the droplets of the aerosol 108 and thereby permit formation of the particles 112.
- maximum average stream temperatures in the furnace 110 will generally be in a range of from about 500°C to about 1500°C, and preferably in the range of from about 900 °C to about 1300°C.
- the maximum average stream temperature refers to the maximum average temperature that an aerosol stream attains while flowing through the furnace. This is typically determined by a temperature probe inserted into the furnace.
- residence time in the heating zone of the furnace 110 of shorter than about 4 seconds is typical, with shorter than about 2 seconds being preferred, shorter than about 1 second being more preferred, shorter than about 0.5 second being even more preferred, and shorter than about 0.2 second being most preferred.
- the residence time should be long enough, however, to assure that the particles 112 attain the desired maximum average stream temperature for a given heat transfer rate. In that regard, with extremely short residence times, higher furnace temperatures could be used to increase the rate of heat transfer so long as the particles 112 attain a maximum temperature within the desired stream temperature range. That mode of operation, however, is not preferred.
- residence time refers to the actual time for a material to pass through the relevant process equipment. In the case of the furnace, this includes the effect of increasing velocity with gas expansion due to heating.
- the furnace 110 will be a tube-shaped furnace, so that the aerosol 108 moving into and through the furnace does not encounter sharp edges on which droplets could collect. Loss of droplets to collection at sha ⁇ surfaces results in a lower yield of particles 112. More important, however, the accumulation of liquid at sharp edges can result in re-release of undesirably large droplets back into the aerosol 108, which can cause contamination of the particulate product 116 with undesirably large particles. Also, over time, such liquid collection at sharp surfaces can cause fouling of process equipment, impairing process performance.
- the furnace 110 may be any suitable furnace reactor, which typically includes a tubular furnace through which the aerosol flows. Also, although the present invention is described with primary reference to a furnace reactor, which is preferred, it should be recognized that, except as noted, any other thermal reactor, including a flame reactor or a plasma reactor, could be used instead. A furnace reactor is, however, preferred, because of the generally even heating characteristic of a furnace for attaining a uniform stream temperature.
- the particle collector 114 may be any suitable apparatus for collecting particles
- One preferred embodiment of the particle collector 114 uses one or more filter to separate the particles 112 from gas. Such a filter may be of any type, including a bag filter. Another preferred embodiment of the particle collector uses one or more cyclone to separate the particles 112. Other apparatus that may be used in the particle collector 114 includes an electrostatic precipitator. Also, collection should normally occur at a temperature above the condensation temperature of the gas stream in which the particles 112 are suspended. Also, collection should normally be at a temperature that is low enough to prevent significant agglomeration of the particles 112. The process and apparatus of the present invention are well-suited for producing commercial-size batches of extremely high quality particles.
- the process and the accompanying apparatus provide versatility for preparing powder including a wide variety of materials, and easily accommodate shifting of production between different specialty batches of particles.
- the aerosol generator 106 which must be capable of producing a high quality aerosol with high droplet loading, as previously noted.
- the aerosol generator 106 includes a plurality of ultrasonic transducer discs 120 that are each mounted in a transducer housing 122.
- the transducer housings 122 are mounted to a transducer mounting plate 124, creating an array of the ultrasonic transducer discs 120.
- the aerosol generator 106 includes forty-nine transducers in a 7 x 7 array.
- the array configuration is as shown in Fig. 3, which depicts the locations of the transducer housings 122 mounted to the transducer mounting plate 124.
- a separator 126 in spaced relation to the transducer discs 120, is retained between a bottom retaining plate 128 and a top retaining plate 130.
- Gas delivery tubes 132 are connected to gas distribution manifolds 134, which have gas delivery ports 136.
- the gas distribution manifolds 134 are housed within a generator body 138 that is covered by generator lid 140.
- a transducer driver 144 having circuitry for driving the transducer discs 120, is electronically connected with the transducer discs 120 via electrical cables 146.
- the transducer discs 120 are activated by the transducer driver 144 via the electrical cables 146.
- the transducers preferably vibrate at a frequency of from about 1 MHz to about 5 MHz, more preferably from about 1.5 MHz to about 3 MHz. Frequently used frequencies are at about
- the transducer discs 110 should be operating at substantially the same frequency when an aerosol with a narrow droplet size distribution is desired. This is important because commercially available transducers can vary significantly in thickness, sometimes by as much as 10%. It is preferred, however, that the transducer discs 120 operate at frequencies within a range of 5% above and below the median transducer frequency, more preferably within a range of 2.5%, and most preferably within a range of 1%. This can be accomplished by careful selection of the transducer discs 120 so that they all preferably have thicknesses within 5% of the median transducer thickness, more preferably within 2.5%, and most preferably within 1%.
- Liquid feed 102 enters through a feed inlet 148 and flows through flow channels 150 to exit through feed outlet 152.
- An ultrasonically transmissive fluid typically water, enters through a water inlet 154 to fill a water bath volume 156 and flow through flow channels 158 to exit through a water outlet 160.
- a proper flow rate of the ultrasonically transmissive fluid is necessary to cool the transducer discs 120 and to prevent overheating of the ultrasonically transmissive fluid.
- Ultrasonic signals from the transducer discs 120 are transmitted, via the ultrasonically transmissive fluid, across the water bath volume 156, and ultimately across the separator 126, to the liquid feed 102 in flow channels 150.
- the ultrasonic signals from the ultrasonic transducer discs 120 cause atomization cones 162 to develop in the liquid feed 102 at locations corresponding with the transducer discs 120.
- Carrier gas 104 is introduced into the gas delivery tubes 132 and delivered to the vicinity of the atomization cones 162 via gas delivery ports 136. Jets of carrier gas exit the gas delivery ports 136 in a direction so as to impinge on the atomization cones 162, thereby sweeping away atomized droplets of the liquid feed 102 that are being generated from the atomization cones 162 and creating the aerosol 108, which exits the aerosol generator 106 through an aerosol exit opening 164.
- the embodiment of the aerosol generator 106 shown in Fig. 2 includes two gas exit ports per atomization cone 162, with the gas ports being positioned above the liquid medium 102 over troughs that develop between the atomization cones 162, such that the exiting carrier gas 104 is horizontally directed at the surface of the atomization cones
- each of the gas delivery ports 136 through which the carrier gas exits the gas delivery tubes, should be located below the top of the atomization cones
- the aerosol generator 106 permits generation of the aerosol 108 with heavy loading with droplets of the carrier liquid 102, unlike aerosol generator designs that do not efficiently focus gas delivery to the locations of droplet formation.
- FIG. 2 Another important feature of the aerosol generator 106, as shown in Fig. 2, is the use of the separator 126, which protects the transducer discs 120 from direct contact with the liquid feed 102, which is often highly corrosive.
- the height of the separator 126 above the top of the transducer discs 120 should normally be kept as small as possible, and is often in the range of from about 1 centimeter to about 2 centimeters.
- the top of the liquid feed 102 in the flow channels above the tops of the ultrasonic transducer discs 120 is typically in a range of from about 2 centimeters to about 5 centimeters, whether or not the aerosol generator includes the separator 126, with a distance of about 3 to 4 centimeters being preferred.
- the aerosol generator 106 could be made without the separator 126, in which case the liquid feed 102 would be in direct contact with the transducer discs 120, the highly corrosive nature of the liquid feed 102 can often cause premature failure of the transducer discs 120.
- One disadvantage of using the separator 126 is that the rate of droplet production from the atomization cones 162 is reduced, often by a factor of two or more, relative to designs in which the liquid feed 102 is in direct contact with the ultrasonic transducer discs 102.
- the aerosol generator 106 used with the present invention is capable of producing a high quality aerosol with heavy droplet loading, as previously discussed.
- Suitable materials for the separator 126 include, for example, polyamides (such as KaptonTM membranes from DuPont) and other polymer materials, glass, and plexiglass.
- the main requirements for the separator 126 are that it be ultrasonically transmissive, corrosion resistant and impermeable.
- One alternative to using the separator 126 is to bind a corrosion-resistant protective coating onto the surface of the ultrasonic transducer discs 120, thereby preventing the liquid feed 102 from contacting the surface of the ultrasonic transducer discs 120.
- the aerosol generator 106 will typically be constructed without the water bath volume 156 and the liquid feed 102 will flow directly over the ultrasonic transducer discs 120.
- protective coating materials include platinum, gold, TEFLONTM, epoxies and various plastics. Such coating typically significantly extends transducer life. Also, when operating without the separator 126, the aerosol generator 106 will typically produce the aerosol 108 with a much higher droplet loading than when the separator 126 is used.
- the design for the aerosol generator 106 based on an array of ultrasonic transducers is versatile and is easily modified to accommodate different generator sizes for different specialty applications.
- the aerosol generator 106 may be designed to include a plurality of ultrasonic transducers in any convenient number. Even for smaller scale production, however, the aerosol generator 106 preferably has at least nine ultrasonic transducers, more preferably at least 16 ultrasonic transducers, and even more preferably at least 25 ultrasonic transducers. For larger scale production, however, the aerosol generator 106 includes at least 40 ultrasonic transducers, more preferably at least 100 ultrasonic transducers, and even more preferably at least 400 ultrasonic transducers.
- the aerosol generator may have at least 1000 ultrasonic transducers.
- Figs. 4-21 show component designs for an aerosol generator 106 including an array of 400 ultrasonic transducers.
- the transducer mounting plate 124 is shown with a design to accommodate an array of 400 ultrasonic transducers, arranged in four subarrays of 100 ultrasonic transducers each.
- the transducer mounting plate 124 has integral vertical walls 172 for containing the ultrasonically transmissive fluid, typically water, in a water bath similar to the water bath volume 156 described previously with reference to Fig. 2.
- transducer mounting receptacles 174 are provided in the transducer mounting plate 124 for mounting ultrasonic transducers for the desired array.
- FIG. 6 the profile of an individual transducer mounting receptacle 174 is shown.
- a mounting seat 176 accepts an ultrasonic transducer for mounting, with a mounted ultrasonic transducer being held in place via screw holes 178.
- the mounting receptacle 176 is a flared opening 180 through which an ultrasonic signal may be transmitted for the purpose of generating the aerosol 108, as previously described with reference to Fig. 2.
- a preferred transducer mounting configuration is shown in Fig.
- an ultrasonic transducer disc 120 is mounted to the transducer mounting plate 124 by use of a compression screw 177 threaded into a threaded receptacle 179.
- the compression screw 177 bears against the ultrasonic transducer disc 120, causing an o-ring 181, situated in an o-ring seat 182 on the transducer mounting plate, to be compressed to form a seal between the transducer mounting plate 124 and the ultrasonic transducer disc 120.
- the bottom retaining plate 128 for a 400 transducer array is shown having a design for mating with the transducer mounting plate 124 (shown in Figs. 4-5).
- the bottom retaining plate 128 has eighty openings 184, arranged in four subgroups 186 of twenty openings 184 each.
- Each of the openings 184 corresponds with five of the transducer mounting receptacles 174 (shown in Figs. 4 and 5) when the bottom retaining plate 128 is mated with the transducer mounting plate 124 to create a volume for a water bath between the transducer mounting plate 124 and the bottom retaining plate 128.
- the openings 184 therefore, provide a pathway for ultrasonic signals generated by ultrasonic transducers to be transmitted through the bottom retaining plate.
- a liquid feed box 190 for a 400 transducer array is shown having the top retaining plate 130 designed to fit over the bottom retaining plate
- the liquid feed box 190 also includes vertically extending walls 192 for containing the liquid feed 102 when the aerosol generator is in operation. Also shown in Figs. 9 and 10 is the feed inlet 148 and the feed outlet 152. An adjustable weir 198 determines the level of liquid feed 102 in the liquid feed box 190 during operation of the aerosol generator 106.
- the top retaining plate 130 of the liquid feed box 190 has eighty openings 194 therethrough, which are arranged in four subgroups 196 of twenty openings 194 each.
- the openings 194 of the top retaining plate 130 correspond in size with the openings 184 of the bottom retaining plate 128 (shown in Fig. 8).
- the openings 194 through the top retaining plate 130 and the openings 184 through the bottom retaining plate 128 are aligned, with the separator 126 positioned therebetween, to permit transmission of ultrasonic signals when the aerosol generator 106 is in operation.
- a plurality of gas tube feed-through holes 202 extend through the vertically extending walls 192 to either side of the assembly including the feed inlet 148 and feed outlet 152 of the liquid feed box 190.
- the gas tube feed-through holes 202 are designed to permit insertion therethrough of gas tubes 208 of a design as shown in Fig. 11.
- a gas tube 208 is inserted through each of the gas tube feed-through holes 202 so that gas delivery ports 136 in the gas tube 208 will be properly positioned and aligned adjacent the openings 194 in the top retaining plate 130 for delivery of gas to atomization cones that develop in the liquid feed box 190 during operation of the aerosol generator 106.
- the gas delivery ports 136 are typically holes having a diameter of from about 1.5 millimeters to about 3.5 millimeters.
- a partial view of the liquid feed box 190 is shown with gas tubes 208 A, 208B and 208C positioned adjacent to the openings 194 through the top retaining plate 130. Also shown in Fig. 12 are the relative locations that ultrasonic transducer discs 120 would occupy when the aerosol generator 106 is assembled. As seen in Fig. 12, the gas tube 208A, which is at the edge of the array, has five gas delivery ports 136.
- Each of the gas delivery ports 136 is positioned to divert carrier gas 104 to a different one of atomization cones that develop over the array of ultrasonic transducer discs 120 when the aerosol generator 106 is operating.
- the gas tube 208B which is one row in from the edge of the array, is a shorter tube that has ten gas delivery ports 136, five each on opposing sides of the gas tube 208B.
- the gas tube 208B therefore, has gas delivery ports 136 for delivering gas to atomization cones corresponding with each often ultrasonic transducer discs 120.
- the third gas tube, 208C is a longer tube that also has ten gas delivery ports 136 for delivering gas to atomization cones corresponding with ten ultrasonic transducer discs 120.
- Fig. 12 which includes two gas delivery ports per ultrasonic transducer disc 120, the design shown in Fig. 12 is, nevertheless, capable of producing a dense, high-quality aerosol without unnecessary waste of gas.
- FIG. 13 the flow of carrier gas 104 relative to atomization cones 162 during operation of the aerosol generator 106 having a gas distribution configuration to deliver carrier gas 104 from gas delivery ports on both sides of the gas tubes 208, as was shown for the gas tubes 208A, 208B and 208C in the gas distribution configuration shown in Fig. 11.
- the carrier gas 104 sweeps both directions from each of the gas tubes 208.
- carrier gas 104 An alternative, and preferred, flow for carrier gas 104 is shown in Fig. 14. As shown in Fig. 14, carrier gas 104 is delivered from only one side of each of the gas tubes 208. This results in a sweep of carrier gas from all of the gas tubes 208 toward a central area 212. This results in a more uniform flow pattern for aerosol generation that may significantly enhance the efficiency with which the carrier gas 104 is used to produce an aerosol. The aerosol that is generated, therefore, tends to be more heavily loaded with liquid droplets.
- Another configuration for distributing carrier gas in the aerosol generator 106 is shown in Figs. 15 and 16. In this configuration, the gas tubes 208 are hung from a gas distribution plate 216 adjacent gas flow holes 218 through the gas distribution plate 216.
- the gas distribution plate 216 would be mounted above the liquid feed, with the gas flow holes positioned to each correspond with an underlying ultrasonic transducer.
- atomization cones 162 develop through the gas flow holes 218, and the gas tubes 208 are located such that carrier gas 104 exiting from ports in the gas tubes 208 impinge on the atomization cones and flow upward through the gas flow holes.
- the gas flow holes 218, therefore, act to assist in efficiently distributing the carrier gas 104 about the atomization cones 162 for aerosol formation.
- the gas distribution plates 218 can be made to accommodate any number of the gas tubes 208 and gas flow holes 218.
- Figs. 15 and 16 shows a design having only two of the gas tubes 208 and only 16 of the gas flow holes 218.
- the gas distribution plate 216 could be used alone, without the gas tubes 208. In that case, a slight positive pressure of carrier gas 104 would be maintained under the gas distribution plate 216 and the gas flow holes 218 would be sized to maintain the proper velocity of carrier gas 104 through the gas flow holes 218 for efficient aerosol generation. Because of the relative complexity of operating in that mode, however, it is not preferred.
- Aerosol generation may also be enhanced through mounting of ultrasonic transducers at a slight angle and directing the carrier gas at resulting atomization cones such that the atomization cones are tilting in the same direction as the direction of flow of carrier gas.
- an ultrasonic transducer disc 120 is shown.
- the ultrasonic transducer disc 120 is tilted at a tilt angle 114 (typically less than 10 degrees), so that the atomization cone 162 will also have a tilt. It is preferred that the direction of flow of the carrier gas 104 directed at the atomization cone 162 is in the same direction as the tilt of the atomization cone 162.
- a gas. manifold 220 is shown for distributing gas to the gas tubes 208 in a 400 transducer array design.
- the gas manifold 220 includes a gas distribution box 222 and piping stubs 224 for connection with gas tubes 208 (shown in Fig. 11). Inside the gas distribution box 222 are two gas distribution plates 226 that form a flow path to assist in distributing the gas equally throughout the gas distribution box 222, to promote substantially equal delivery of gas through the piping stubs 224.
- the gas manifold 220 as shown in Figs. 18 and 19, is designed to feed eleven gas tubes 208. For the 400 transducer design, a total of four gas manifolds 220 are required.
- the generator lid 140 is shown for a 400 transducer array design.
- the generator lid 140 mates with and covers the liquid feed box
- the generator lid 140 has a hood design to permit easy collection of the aerosol 108 without subjecting droplets in the aerosol 108 to sha ⁇ edges on which droplets may coalesce and be lost, and possibly interfere with the proper operation of the aerosol generator 106.
- the aerosol 108 would be withdrawn via the aerosol exit opening 164 through the generator cover 140.
- the aerosol generator 106 produces a high quality aerosol 108 having a high droplet loading, it is often desirable to further concentrate the aerosol 108 prior to introduction into the furnace 110.
- a process flow diagram is shown for one embodiment of the present invention involving such concentration of the aerosol 108.
- the aerosol 108 from the aerosol generator 106 is sent to an aerosol concentrator 236 where excess carrier gas 238 is withdrawn from the aerosol 108 to produce a concentrated aerosol 240, which is then fed to the furnace 110.
- the aerosol concentrator 236 typically includes one or more virtual impactors capable of concentrating droplets in the aerosol 108 by a factor of greater than about 2, preferably by a factor of greater than about 5, and more preferably by a factor of greater than about 10, to produce the concentrated aerosol 240.
- the concentrated aerosol 240 should typically contain greater than about 1 x
- a concentration of about 1 x 10 8 droplets per cubic centimeter of the concentrated aerosol is particularly preferred, because when the concentrated aerosol 240 is loaded more heavily than that, then the frequency of collisions between droplets becomes large enough to impair the properties of the concentrated aerosol 240, resulting in potential contamination of the particulate product 116 with an undesirably large quantity of over-sized particles.
- the aerosol 108 has a concentration of about 1 x 10 7 droplets per cubic centimeter, and the aerosol concentrator 236 concentrates droplets by a factor of 10, then the concentrated aerosol 240 will have a concentration of about 1 x 10 8 droplets per cubic centimeter.
- the aerosol generator when the aerosol generator generates the aerosol 108 with a droplet loading of about 0.167 milliliters liquid feed 102 per liter of carrier gas 104, the concentrated aerosol 240 would be loaded with about 1.67 milliliters of liquid feed 102 per liter of carrier gas 104, assuming the aerosol 108 is concentrated by a factor of 10.
- Having a high droplet loading in aerosol feed to the furnace provides the important advantage of reducing the heating demand on the furnace 110 and the size of flow conduits required through the furnace.
- other advantages of having a dense aerosol include a reduction in the demands on cooling and particle collection components, permitting significant equipment and operational savings.
- powder holdup within the system is reduced, which is also desirable. Concentration of the aerosol stream prior to entry into the furnace 110, therefore, provides a substantial advantage relative to processes that utilize less concentrated aerosol streams.
- the excess carrier gas 238 that is removed in the aerosol concentrator 236 typically includes extremely small droplets that are also removed from the aerosol 108.
- the droplets removed with the excess carrier gas 238 have a weight average size of smaller than about 1.5 microns, and more preferably smaller than about 1 micron and the droplets retained in the concentrated aerosol 240 have an average droplet size of larger than about 2 microns.
- a virtual impactor sized to treat an aerosol stream having a weight average droplet size of about three microns might be designed to remove with the excess carrier gas 238 most droplets smaller than about 1.5 microns in size. Other designs are also possible.
- the loss of these very small droplets in the aerosol concentrator 236 will typically constitute no more than about 10 percent by weight, and more preferably no more than about 5 percent by weight, of the droplets originally in the aerosol stream that is fed to the concentrator 236.
- the aerosol concentrator 236 is useful in some situations, it is normally not required with the process of the present invention, because the aerosol generator 106 is capable, in most circumstances, of generating an aerosol stream that is sufficiently dense. So long as the aerosol stream coming out of the aerosol generator 102 is sufficiently dense, it is preferred that the aerosol concentrator not be used. It is a significant advantage of the present invention that the aerosol generator 106 normally generates such a dense aerosol stream that the aerosol concentrator 236 is not needed. Therefore, the complexity of operation of the aerosol concentrator 236 and accompanying liquid losses may typically be avoided.
- the aerosol stream fed to the furnace preferably includes a droplet flow of greater than about 0.5 liters per hour, more preferably greater than about 2 liters per hour, still more preferably greater than about 5 liters per hour, even more preferably greater than about 10 liters per hour, particularly greater than about 50 liters per hour and most preferably greater than about 100 liters per hour; and with the droplet loading being typically greater than about 0.04 milliliters of droplets per liter of carrier gas, preferably greater than about 0.083 milliliters of droplets per liter of carrier gas 104, more preferably greater than about 0.167 milliliters of droplets per liter of carrier gas 104, still more preferably greater than about 0.25 milliliters of droplets per liter of carrier gas 104, particularly greater than about 0.33 milliliters of
- a virtual impactor 246 includes an upstream plate assembly 248 (details shown in Figs. 24-26) and a downstream plate assembly 250 (details shown in Figs. 27-29), with a concentrating chamber 262 located between the upstream plate assembly 248 and the downstream plate assembly 250.
- the downstream plate assembly 250 includes a plurality of vertically extending exit slits 256 that are in alignment with the inlet slits 254.
- the exit slits 256 are, however, slightly wider than the inlet slits 254.
- the downstream plate assembly 250 also includes flow channels 258 that extend substantially across the width of the entire downstream plate assembly 250, with each flow channel 258 being adjacent to an excess gas withdrawal port 260.
- the aerosol 108 passes through the inlet slits 254 and into the concentrating chamber 262.
- Excess carrier gas 238 is withdrawn from the concentrating chamber 262 via the excess gas withdrawal ports 260.
- the withdrawn excess carrier gas 238 then exits via a gas duct port 264. That portion of the aerosol 108 that is not withdrawn through the excess gas withdrawal ports 260 passes through the exit slits 256 and the flow channels 258 to form the concentrated aerosol 240.
- Those droplets passing across the concentrating chamber 262 and through the exit slits 256 are those droplets of a large enough size to have sufficient momentum to resist being withdrawn with the excess carrier gas 238.
- the inlet slits 254 of the upstream plate assembly 248 include inlet nozzle extension portions 266 that extend outward from the plate surface 268 of the upstream plate assembly 248.
- the exit slits 256 of the downstream plate assembly 250 include exit nozzle extension portions 270 extending outward from a plate surface 272 of the downstream plate assembly 250.
- These nozzle extension portions 266 and 270 are important for operation of the virtual impactor 246, because having these nozzle extension portions 266 and 270 permits a very close spacing to be attained between the inlet slits 254 and the exit slits 256 across the concentrating chamber 262, while also providing a relatively large space in the concentrating chamber 262 to facilitate efficient removal of the excess carrier gas 238.
- the inlet slits 254 have widths that flare outward toward the side of the upstream plate assembly 248 that is first encountered by the aerosol 108 during operation. This flared configuration reduces the sha ⁇ ness of surfaces encountered by the aerosol 108, reducing the loss of aerosol droplets and potential interference from liquid buildup that could occur if sha ⁇ surfaces were present.
- exit slits 256 have a width that flares outward towards the flow channels 258, thereby allowing the concentrated aerosol 240 to expand into the flow channels 258 without encountering sha ⁇ edges that could cause problems.
- both the inlet slits 254 of the upstream plate assembly 248 and the exit slits 256 of the downstream plate assembly 250 are vertically extending.
- This configuration is advantageous for permitting liquid that may collect around the inlet slits 254 and the exit slits 256 to drain away.
- the inlet slits 254 and the exit slits 256 need not, however, have a perfectly vertical orientation. Rather, it is often desirable to slant the slits backward (sloping upward and away in the direction of flow) by about five to ten degrees relative to vertical, to enhance draining of liquid off of the upstream plate assembly 248 and the downstream plate assembly 250.
- This drainage function of the vertically extending configuration of the inlet slits 254 and the outlet slits 256 also inhibits liquid build-up in the vicinity of the inlet slits 248 and the exit slits 250, which liquid build-up could result in the release of undesirably large droplets into the concentrated aerosol 240.
- the aerosol generator 106 of the present invention produces a concentrated, high quality aerosol of micro-sized droplets having a relatively narrow size distribution. It has been found, however, that for many applications the process of the present invention is significantly enhanced by further classifying by size the droplets in the aerosol 108 prior to introduction of the droplets into the furnace 110.
- a process flow diagram is shown for one embodiment of the process of the present invention including such droplet classification.
- the aerosol 108 from the aerosol generator 106 goes to a droplet classifier 280 where oversized droplets are removed from the aerosol 108 to prepare a classified aerosol 282.
- Liquid 284 from the oversized droplets that are being removed is drained from the droplet classifier 280. This drained liquid 284 may advantageously be recycled for use in preparing additional liquid feed 102.
- Any suitable droplet classifier may be used for removing droplets above a predetermined size.
- a cyclone could be used to remove over-size droplets.
- One embodiment of an impactor for use with the present invention will now be described with reference to Figs. 31-35.
- an impactor 288 has disposed in a flow conduit 286 a flow control plate 290 and an impactor plate assembly 292.
- the flow control plate 290 is conveniently mounted on a mounting plate 294.
- the flow control plate 290 is used to channel the flow of the aerosol stream toward the impactor plate assembly 292 in a manner with controlled flow characteristics that are desirable for proper impaction of oversize droplets on the impactor plate assembly 292 for removal through the drains 296 and 314.
- One embodiment of the flow control plate 290 is shown in Fig. 32.
- the flow control plate 290 has an array of circular flow ports 296 for channeling flow of the aerosol 108 towards the impactor plate assembly 292 with the desired flow characteristics.
- the mounting plate 294 has a mounting flange 298 with a large diameter flow opening 300 passing therethrough to permit access of the aerosol 108 to the flow ports 296 of the flow control plate 290
- the impactor plate assembly 292 includes an impactor plate 302 and mounting brackets 304 and 306 used to mount the impactor plate 302 inside of the flow conduit 286.
- the impactor plate 302 and the flow channel plate 290 are designed so that droplets larger than a predetermined size will have momentum that is too large for those particles to change flow direction to navigate around the impactor plate 302.
- the configuration of the impactor plate 302 shown in Fig. 30 represents only one of many possible configurations for the impactor plate 302.
- the impactor 288 could include an upstream flow control plate 290 having vertically extending flow slits therethrough that are offset from vertically extending flow slits through the impactor plate 302, such that droplets too large to navigate the change in flow due to the offset of the flow slits between the flow control plate 290 and the impactor plate 302 would impact on the impactor plate 302 to be drained away.
- Other designs are also possible.
- the droplet classifier 280 is typically designed to remove droplets from the aerosol 108 that are larger than about 15 microns in size, more preferably to remove droplets larger than about 10 microns in size, even more preferably to remove droplets of a size larger than about 8 microns in size and most preferably to remove droplets larger than about 5 microns in size.
- the droplet classification size in the droplet classifier is preferably smaller than about 15 microns, more preferably smaller than about 10 microns, even more preferably smaller than about 8 microns and most preferably smaller than about 5 microns.
- the classification size also called the classification cut point, is that size at which half of the droplets of that size are removed and half of the droplets of that size are retained.
- the droplet classification size may be varied, such as by changing the spacing between the impactor plate 302 and the flow control plate 290 or increasing or decreasing aerosol velocity through the jets in the flow control plate 290.
- the aerosol generator 106 of the present invention initially produces a high quality aerosol 108, having a relatively narrow size distribution of droplets, typically less than about 30 weight percent of liquid feed 102 in the aerosol 108 is removed as the drain liquid 284 in the droplet classifier 288, with preferably less than about 25 weight percent being removed, even more preferably less than about 20 weight percent being removed and most preferably less than about 15 weight percent being removed.
- Minimizing the removal of liquid feed 102 from the aerosol 108 is particularly important for commercial applications to increase the yield of high quality particulate product 116. It should be noted, however, that because of the superior performance of the aerosol generator 106, it is frequently not required to use an impactor or other droplet classifier to obtain a desired absence of oversize droplets to the furnace. This is a major advantage, because the added complexity and liquid losses accompanying use of an impactor may often be avoided with the process of the present invention.
- Fig. 36 one embodiment of the present invention is shown inco ⁇ orating both the virtual impactor 246 and the impactor 288.
- Basic components of the virtual impactor 246 and the impactor 288, as shown in Fig. 36, are substantially as previously described with reference to Figs. 23-35.
- the aerosol 108 from the aerosol generator 106 is fed to the virtual impactor 246 where the aerosol stream is concentrated to produce the concentrated aerosol 240.
- the concentrated aerosol 240 is then fed to the impactor 288 to remove large droplets therefrom and produce the classified aerosol 282, which may then be fed to the furnace 110.
- both undesirably large and undesirably small droplets are removed, thereby producing a classified aerosol with a very narrow droplet size distribution.
- the order of the aerosol concentrator and the aerosol classifier could be reversed, so that the aerosol concentrator 236 follows the aerosol classifier 280.
- One important feature of the design shown in Fig. 36 is the inco ⁇ oration of drains
- drain 310 drains liquid away from the inlet side of the first plate assembly 248 of the virtual impactor 246.
- Drain 312 drains liquid away from the inside of the concentrating chamber 262 in the virtual impactor 246 and drain 314 removes liquid that deposits out of the excess carrier gas 238.
- Drain 316 removes liquid from the vicinity of the inlet side of the flow control plate 290 of the impactor, while the drain 296 removes liquid from the vicinity of the impactor plate 302.
- the particles 112 exiting the furnace 110 are sent to a particle cooler 320 to produce a cooled particle stream 322, which is then feed to the particle collector 114.
- the particle cooler 320 may be any cooling apparatus capable of cooling the particles 112 to the desired temperature for introduction into the particle collector 114, traditional heat exchanger designs are not preferred. This is because a traditional heat exchanger design ordinarily directly subjects the aerosol stream, in which the hot particles 112 are suspended, to cool surfaces. In that situation, significant losses of the particles 112 occur due to thermophoretic deposition of the hot particles 112 on the cool surfaces of the heat exchanger.
- a gas quench apparatus is provided for use as the particle cooler 320 that significantly reduces thermophoretic losses compared to a traditional heat exchanger.
- the gas quench cooler includes a perforated conduit 332 housed inside of a cooler housing 334 with an annular space 336 located between the cooler housing 334 and the perforated conduit 332.
- a quench gas inlet box 338 In fluid communication with the annular space 336 is a quench gas inlet box 338, inside of which is disposed a portion of an aerosol outlet conduit 340.
- the perforated conduit 332 extends between the aerosol outlet conduit 340 and an aerosol inlet conduit 342. Attached to an opening into the quench gas inlet box 338 are two quench gas feed tubes 344. Referring specifically to Fig. 40, the perforated tube 332 is shown.
- the perforated tube 332 has a plurality of openings 345.
- the openings 345 when the perforated conduit 332 is assembled into the gas quench cooler 330, permit the flow of quench gas 346 from the annular space 336 into the interior space 348 of the perforated conduit 332.
- the openings 345 are shown as being round holes, any shape of opening could be used, such as slits.
- the perforated conduit 332 could be a porous screen.
- Two heat radiation shields 347 prevent downstream radiant heating from the furnace. In most instances, however, it will not be necessary to include the heat radiation shields 347, because downstream radiant heating from the furnace is normally not a significant problem. Use of the heat radiation shields 347 is not preferred due to particulate losses that accompany their use.
- the particles 112 carried by and dispersed in a gas stream, enter the gas quench cooler 330 through the aerosol inlet conduit 342 and flow into the interior space 348 of perforated conduit 332.
- Quench gas 346 is introduced through the quench gas feed tubes 344 into the quench gas inlet box 338. Quench gas 346 entering the quench gas inlet box 338 encounters the outer surface of the aerosol outlet conduit 340, forcing the quench gas 346 to flow, in a spiraling, swirling manner, into the annular space 336, where the quench gas 346 flows through the openings 345 through the walls of the perforated conduit 332.
- the gas 346 retains some swirling motion even after passing into the interior space 348.
- the particles 112 are quickly cooled with low losses of particles to the walls of the gas quench cooler 330.
- the quench gas 346 enters in a radial direction into the interior space 348 of the perforated conduit 332 around the entire periphery, or circumference, of the perforated conduit 332 and over the entire length of the perforated conduit 332.
- the cool quench gas 346 mixes with and cools the hot particles 112, which then exit through the aerosol outlet conduit 340 as the cooled particle stream 322.
- the cooled particle stream 322 can then be sent to the particle collector 114 for particle collection.
- the temperature of the cooled particle stream 322 is controlled by introducing more or less quench gas.
- the quench gas 346 is fed into the quench cooler 330 in counter flow to flow of the particles.
- the quench cooler could be designed so that the quench gas 346 is fed into the quench cooler in concurrent flow with the flow of the particles 112.
- the amount of quench gas 346 fed to the gas quench cooler 330 will depend upon the specific material being made and the specific operating conditions. The quantity of quench gas 346 used, however, must be sufficient to reduce the temperature of the aerosol steam including the particles 112 to the desired temperature.
- the particles 112 are cooled to a temperature at least below about 200 °C, and often lower.
- the cooled particle stream 322 must be at a temperature that is above the condensation temperature for water as another condensible vapor in the stream.
- the temperature of the cooled particle stream 322 is often at a temperature of from about 50°C to about 120°C. Because of the entry of quench gas 346 into the interior space 348 of the perforated conduit 322 in a radial direction about the entire circumference and length, of the perforated conduit 322, a buffer of the cool quench gas 346 is formed about the inner wall of the perforated conduit 332, thereby significantly inhibiting the loss of hot particles 112 due to thermophoretic deposition on the cool wall of the perforated conduit 332.
- the quench gas 346 exiting the openings 345 and entering into the interior space 348 should have a radial velocity (velocity inward toward the center of the circular cross-section of the perforated conduit 332) of larger than the thermophoretic velocity of the particles 112 inside the perforated conduit 332 in a direction radially outward toward the perforated wall of the perforated conduit 332.
- the gas quench cooler 330 includes a flow path for the particles 112 through the gas quench cooler of a substantially constant cross-sectional shape and area.
- the flow path through the gas quench cooler 330 will have the same cross-sectional shape and area as the flow path through the furnace 110 and through the conduit delivering the aerosol 108 from the aerosol generator 106 to the furnace 110.
- the total residence time for the aerosol flowing through both the heated zone of the furnace 110 and through the quench cooler is typically shorter than about 5 seconds, more preferably shorter than about 2 seconds, and most preferably shorter than about 1 second.
- the process of the present invention can also incorporate compositional modification of the particles 112 exiting the furnace.
- the compositional modification will involve forming on the particles 112 a material phase that is different than that of the particles 112, such as by coating the particles 112 with a coating material.
- Fig. 41 One embodiment of the process of the present invention inco ⁇ orating particle coating is shown in Fig. 41. As shown in Fig. 41, the particles 112 exiting from the furnace 110 go to a particle coater 350 where a coating is placed over the outer surface of the particles 112 to form coated particles 352, which are then sent to the particle collector 114 for preparation of the particulate product 116.
- the particles 112 are coated using any suitable particle coating technology, such as by gas-to-particle conversion.
- the coating is accomplished by chemical vapor deposition (CVD) and/or physical vapor deposition (PVD).
- CVD coating one or more vapor phase coating precursors are reacted to form a surface coating on the particles 112.
- Preferred coatings deposited by CVD include oxides, such as silica, and elemental metals.
- PVD coating coating material physically deposits on the surface of the particles 112.
- Preferred coatings deposited by PVD include organic materials and elemental metals, such as elemental silver, copper and gold.
- Another possible surface coating method is surface conversion of the surface portion of the particles 112 by reaction with a vapor phase reactant to convert a surface portion of the particles to a different material than that originally contained in the particles 112.
- a gaseous coating feed involving coating precursors such as for CVD and PVD
- feed of the gaseous coating feed is introduced through a circumferentially perforated conduit, such as was described for the quench cooler 330 with reference to Figs. 38-40.
- the quench cooler 330 may also act as the particle coater 350, when coating material precursors are included in the quench gas
- the particles 112 are coated according to the process of the present invention, the particles 112 are also manufactured via the aerosol process of the present invention, as previously described.
- the process of the present invention can, however, be used to coat particles that have been premanufactured by a different process, such as by a liquid precipitation route.
- the particles When coating particles that have been premanufactured by a different route, such as by liquid precipitation, it is preferred that the particles remain in a dispersed state from the time of manufacture to the time that the particles are introduced in slurry form into the aerosol generator 106 for preparation of the aerosol 108 to form the dry particles 112 in the furnace 110, which particles 112 can then be coated in the particle coater 350. Maintaining particles in a dispersed state from manufacture through coating avoids problems associated with agglomeration and redispersion of particles if particles must be redispersed in the liquid feed 102 for feed to the aerosol generator 106.
- the liquid medium containing the suspended precipitated particles could be used to form the liquid feed 102 to the aerosol generator 106.
- the particle coater 350 could be an integral extension of the furnace 110 or could be a separate piece of equipment.
- the particles 112 may then be structurally modified to impart desired physical properties prior to particle collection.
- Fig. 42 one embodiment of the process of the present invention is shown including such structural particle modification.
- the particles 112 exiting the furnace 110 go to a particle modifier 360 where the particles are structurally modified to form modified particles 362, which are then sent to the particle collector 114 for preparation of the particulate product 116.
- the particle modifier 360 is typically a furnace, such as an annealing furnace, which may be integral with the furnace 110 or may be a separate heating device.
- the particle modifier 360 it is important that the particle modifier 360 have temperature control that is independent of the furnace 110, so that the proper conditions for particle modification may be provided separate from conditions required of the furnace 110 to prepare the particles 112.
- the particle modifier 360 therefore, typically provides a temperature controlled environment and necessary residence time to effect the desired structural modification of the particles 112.
- the structural modification that occurs in the particle modifier 360 may be any modification to the crystalline structure or mo ⁇ hology of the particles 112.
- the particles 112 may be annealed in the particle modifier 360 to densify the particles 112 or to recrystallize the particles 112 into a poly crystalline or single crystalline form.
- the particles may be annealed for a sufficient time to permit redistribution within the particles 112 of different material phases.
- the initial mo ⁇ hology of composite particles made in the furnace 110 could take a variety of forms, depending upon the specified materials involved and the specific processing conditions. Examples of some possible composite particle mo ⁇ hologies, manufacturable according to the present invention are shown in Fig. 43. These mo ⁇ hologies could be of the particles as initially produced in the furnace 110 or that result from structural modification in the particle modifier 360.
- the composite particles could include a mixture of the mo ⁇ hological attributes shown in Fig. 43.
- Fig. 44 an embodiment of the apparatus of the present invention is shown that includes the aerosol generator 106 (in the form of the 400 transducer array design), the aerosol concentrator 236 (in the form of a virtual impactor), the droplet classifier 280 (in the form of an impactor), the furnace 110, the particle cooler 320 (in the form of a gas quench cooler) and the particle collector 114 (in the form of a bag filter).
- flex connectors 370 are used upstream and downstream of the aerosol concentrator 236 and the droplet classifier 280. By using the flex connectors 370, it is possible to vary the angle of slant of vertically extending slits in the aerosol concentrator 236 and/or the droplet classifier 280. In this way, a desired slant for the vertically extending slits may be set to optimize the draining characteristics off the vertically extending slits.
- Aerosol generation with the process of the present invention has thus far been described with respect to the ultrasonic aerosol generator.
- Use of the ultrasonic generator is preferred for the process of the present invention because of the extremely high quality and dense aerosol generated.
- the aerosol generator for the process of the present invention may have a different design depending upon the specific application. For example, when larger particles are desired, such as those having a weight average size of larger than about 3 microns, a spray nozzle atomizer may be preferred.
- the ultrasonic generator as described' herein, is particularly preferred.
- the ultrasonic generator of the present invention is particularly preferred for when making particles with a weight average size of from about 0.2 micron to about 3 microns.
- ultrasonic aerosol generators have been used for medical applications and home humidifiers, use of ultrasonic generators for spray pyrolysis particle manufacture has largely been confined to small-scale, experimental situations.
- the aerosol generator produces a high quality aerosol, with heavy droplet loading and at a high rate of production.
- Such a combination of small droplet size, narrow size distribution, heavy droplet loading, and high production rate provide significant advantages over existing aerosol generators that usually suffer from at least one of inadequately narrow size distribution, undesirably low droplet loading, or unacceptably low production rate.
- an aerosol may be produced typically having greater than about 70 weight percent (and preferably greater than about 80 weight percent) of droplets in the size range of from about 1 micron to about 10 microns, preferably in a size range of from about 1 micron to about 5 microns and more preferably from about 2 microns to about
- the ultrasonic generator of the present invention is capable of delivering high output rates of liquid feed in the aerosol.
- the rate of liquid feed, at the high liquid loadings previously described, is preferably greater than about 25 milliliters per hour per transducer, more preferably greater than about 37.5 milliliters per hour per transducer, even more preferably greater than about 50 milliliters per hour per transducer and most preferably greater than about 100 millimeters per hour per transducer.
- This high level of performance is desirable for commercial operations and is accomplished with the present invention with a relatively simple design including a single precursor bath over an array of ultrasonic transducers.
- the ultrasonic generator is made for high aerosol production rates at a high droplet loading, and with a narrow size distribution of droplets.
- the generator preferably produces an aerosol at a rate of greater than about 0.5 liter per hour of droplets, more preferably greater than about 2 liters per hour of droplets, still more preferably greater than about 5 liters per hour of droplets, even more preferably greater than about 10 liters per hour of droplets and most preferably greater than about 40 liters per hour of droplets.
- the aerosol generator when the aerosol generator has a 400 transducer design, as described with reference to Figures 3-21, the aerosol generator is capable of producing a high quality aerosol having high droplet loading as previously described, at a total production rate of preferably greater than about 10 liters per hour of liquid feed, more preferably greater than about 15 liters per hour of liquid feed, even more preferably greater than about 20 liters per hour of liquid feed and most preferably greater than about
- total particulate product produced is preferably greater than about 0.5 gram per hour per transducer, more preferably greater than about 0.75 gram per hour per transducer, even more preferably greater than about 1.0 gram per hour per transducer and most preferably greater than about 2.0 grams per hour per transducer.
- the concentrations of soluble precursors in the liquid feed 102 will vary depending upon the particular materials involved and the particular particle composition and particle mo ⁇ hology desired. For most applications, when soluble precursor(s) are used, the soluble precursor(s) are present at a concentration of from about 1-50 weight percent of the liquid feed. 102. In any event, however, when soluble precursors are used, the precursors should be at a low enough concentration to permit the liquid feed to be ultrasonically atomized and to prevent premature precipitation of materials from the liquid feed 102.
- the concentration of suspended particulate precursors will also vary depending upon the particular materials involved in the particular application. Powders of a variety of materials may be made according to the present invention, with the powders so produced being an important aspect of the invention.
- these various powders may be made with very desirable attributes for a variety of applications.
- the powders are typically made with a small weight average particle size, narrow particle size distribution, spheroidal particle shape, and high density relative to a theoretical density for the material of the particles.
- the particles of the powder typically are either substantially single crystalline or are polycrystalline and with a large mean crystallite size.
- the powders are characterized generally as having a weight average particle size that typically is in the range of from about 0.05 micron to about 4 microns, with most powders having a weight average size of from about 0.1 micron to about 3 microns.
- particle size may generally be controlled to provide particles with a desired size. Particle size is varied primarily by altering the frequency of ultrasonic transducers in the aerosol generator and by altering the concentration of precursors in the liquid feed. Lower ultrasonic frequencies tend to produce larger particles, while higher frequencies tend to produce smaller particles. Also, higher precursor concentrations in the liquid feed tend to produce larger particles and lower precursor concentrations in the liquid feed tend to produce smaller particles.
- the particles are typically characterized as having a weight average particle size in a range having a lower limit, depending upon the application, of from about 0.1 micron, or about 0.2 micron, or about 0.3 micron, or about 0.5 micron, or about 0.8 micron, or about 1 micron; and having an upper limit, depending upon the application, of about 4 microns, or about 3 microns, or about 2.5 microns, or about 2 microns, or about 1 micron, or about 0.8 micron, or about 0.6 micron.
- Powders having a weight average size range defined by any combination of one of the specified upper limits and one of the specified lower limits are within the scope of the present invention, so long as the upper limit is larger than the lower limit.
- the powders are also characterized as having a narrow particle size distribution, typically with greater than about 75 weight percent, preferably greater than about 90 weight percent, and more preferably greater than about 95 weight percent of the particles in the powder having a size of smaller than two times the weight average particle size, and even more particularly smaller than about 1.5 times the weight average particle size.
- the powders are also typically characterized as being comprised of spheroidal particles.
- the particles are substantially spherical, in that the particles are not jagged or irregular in shape, although the particles may become faceted as the crystallite size in the particles increases.
- Spheroidal particles are advantageous because they typically have increased dispersibility and flowability in paste formulations relative to jagged or irregular particles.
- the powders may be made as very porous or hollow particles, the powders are usually characterized as being very dense, with the particles typically having a density of at least about 80%, preferably at least about 90% and more preferably at least about 95%, of a theoretical density. The theoretical density is that density that particles would have assuming that the particles included zero porosity.
- the density of a particle is as measured by helium pycnometry.
- High particle density is particularly advantageous for thick film applications involving a fired film, because higher density particles tend to exhibit reduced shrinkage during sintering than highly porous particles.
- the particles are also characterized as typically including either substantially single crystalline particles or particles of a polycrystalline nature with large crystallites.
- the particles include a mean crystallite size of larger than about 10 nanometers, preferably larger than about 25 nanometers, more preferably larger than about 50 nanometers, even more preferably larger than about 100 nanometers, and most preferably larger than about 200 nanometers.
- the average crystallite size is typically larger than about 20%, preferably larger than about 40% and even more preferably larger than about 60% of the weight average particle size.
- the powders are further characterized as typically having a high degree of purity, with generally no more than about 0.1 atomic percent impurities and preferably no more than about 0.01 atomic percent impurities.
- One significant characteristic of the powders of the present invention is that they may be made to be substantially free of organic materials, if desired, and particularly to be substantially free of surfactants. This is a significant advantage over particles made by a liquid route, which typically include residual surfactants. These residual surfactants can significantly impair the utility of the particles, especially in making thick film pastes.
- one group of powders of the present invention are metal- containing powders.
- the metal in the particles may include virtually any type of metal and can include both single-component metals and metal alloys.
- Particularly preferred metal-containing powder batches according to the present invention include at least one of palladium (Pd), silver (Ag), nickel (Ni), copper (Cu), gold (Au), platinum (Pt), molybdenum (Mo), tungsten (W), tantalum (Ta), aluminum (Al), and the like.
- Preferred alloys can include a Ag/Pd alloy, such as one having a Ag:Pd ratio of about 70:30.
- metal-containing powders including at least one of palladium, silver, nickel, copper, gold and platinum, and even more particularly those including at least one of palladium, silver, nickel and copper.
- the metal is typically present in a metallic phase.
- the metallic phase may include substantially only a single metal or may include a metal alloy.
- the metal alloy may include any desired relative amounts of alloy constituents.
- the powders include a metal alloy, the alloy is typically made by codissolving metal precursor salts in the liquid feed that is aerosolized to make the powder. Also, when reference is made herein to alloys, it should be recognized that the discussion applies equally to intermetallic compounds, which are not true alloys.
- These metal-containing powders are primarily used for the manufacture of electrically conductive thick film features in electronic products. These thick film features are typically made by applying a layer of a paste containing the powder to a substrate, drying the layer to remove volatile components from layer, and firing the layer to form the film. Extremely high quality powders are required for many of these microelectronic thick film applications. Because of the relative importance of powders including at least one of palladium, silver, nickel, copper, gold and platinum, those particular metals will be discussed in greater detail.
- Palladium-containing powders of the present invention are useful in making electrically conductive features for a variety of microelectronic devices.
- the powders may be used, for example, to make internal electrodes for multi-layer capacitors.
- Palladium precursors are typically palladium salts, which are soluble in aqueous liquids. Preferred precursors are nitrate salts.
- the palladium is typically present in the powders in a metallic phase, which may include substantially only palladium or may include the palladium in an alloy with one or more other metals. Alloying elements include, but are not limited to, silver (Ag), nickel (Ni), copper (Cu), platinum (Pt), molybdenum (Mo), tungsten (W), tantalum (Ta), aluminum (Al), gold (Au), indium (In), lead (Pb), tin (Sn), bismuth (Bi) and the like. Particularly preferred for alloying with palladium are silver and nickel, and particularly silver.
- the alloying element is typically present in the alloy in an amount of from about 0.1 to about 40 weight percent, with from about 1 to about 30 weight percent being more preferred, based on the total weight of the alloy, with the balance of the alloy typically comprising palladium.
- the palladium-containing powders may have any convenient weight average particle size within the range of the invention, which will vary depending upon the application. For most applications, the weight average particle size will be in a range of from about 0.1 micron to about 2 microns. When used to make electrically conductive features in microelectronic devices, such as multi-layer ceramic capacitors, the powder preferably has a weight average particle size of from about 0.1 micron to about 0.8 micron.
- Silver-containing powders of the present invention are useful in making electrically conductive features for a variety of microelectronic devices.
- the powders may be used, for example, to make internal electrodes for multi-layer capacitors.
- Silver are typically silver salts which are soluble in aqueous liquids. Preferred as precursors are nitrate salts.
- the silver is typically present in the powders in a metallic phase, which may include substantially only silver or may include the silver in an alloy with one or more other metals. Alloying elements include, but are not limited to, palladium (Pd), nickel (Ni), copper (Cu), platinum (Pt), molybdenum (Mo), tungsten (W), tantalum (Ta), aluminum (Al), gold (Au), indium (In), lead (Pb), tin (Sn), bismuth (Bi) and the like. Particularly preferred for alloying with silver are palladium and platinum.
- the alloying element is typically present in the alloy in an amount of from about 0.1 to about 40 weight percent, with from about 1 to about 30 weight percent being more preferred, based on the total weight of the alloy, with the balance of the alloy typically comprising silver.
- the silver-containing powders may have any convenient weight average particle size within the range of the invention, which will vary depending upon the application. For most applications, the weight average particle size will be in a range of from about 0.1 micron to about 2 microns. When used to make electrically conductive features in microelectronic devices, such as multi-layer ceramic capacitors, the powder preferably has a weight average particle size of from about 0.1 micron to about 0.8 micron.
- Nickel-containing powders of the present invention are useful in making electrically conductive features for a variety of microelectronic devices.
- the powders may be used, for example, to make internal electrodes for multi-layer capacitors.
- Precursors for making nickel-containing powders are typically nickel salts that are soluble in water, with nitrate salts being preferred.
- the nickel is typically present in a metallic phase.
- the metallic phase may be of substantially only nickel, or it may be in the form of an alloy with one or more other metals.
- Alloying elements include, but are not limited to, palladium (Pd), silver (Ag), gold (Au), copper (Cu), tungsten (W), molybdenum (Mo), platinum (Pt), iron (Fe) and cobalt (Co).
- the alloying element is palladium.
- the alloying element is typically present in the alloy in an amount of from about 0.1 to about 40 weight percent, with from about 1 to about 15 weight percent being more preferred, based on the total weight of the alloy-, with the balance of the alloy typically comprising nickel.
- the nickel-containing powders may have any convenient weight average particle size within the range of the invention, which will vary depending upon the application.
- the weight average particle size will be in a range of from about 0.1 micron to about 2 microns.
- the powder When used to make electrically conductive features in microelectronic devices, such as multi-layer ceramic capacitors, the powder preferably has a weight average particle size of from about 0.1 micron to about 0.8 micron. Copper-containing powders of the present invention are useful in making electrically conductive features for a variety of microelectronic devices. The powders may be used, for example, to make internal electrodes for multi-layer capacitors.
- Precursors for making copper-containing powders are typically copper salts that are soluble in water, with nitrate salts being preferred.
- the copper is typically present in the powders in a metallic phase, which may include substantially only copper or may include the copper in an alloy with one or more other metals.
- Alloying elements include, but are not limited to, palladium (Pd), silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), aluminum (Al), zinc (Zn), magnesium (Mg), tin (Sn), beryllium (Be) and platinum (Pt).
- the alloying element is typically present in the alloy in an amount of from about 0.1 to about 40 weight percent, with from about 1 to about 15 weight percent being more preferred, based on the total weight of the alloy, with the balance of the alloy typically comprising copper.
- the copper-containing powders may have any convenient weight average particle size within the range of the invention, which will vary depending upon the application. For most applications, the weight average particle size will be in a range of from about
- the powder When used to make electrically conductive features in microelectronic devices, such as multi-layer ceramic capacitors, the powder preferably has a weight average particle size of from about 0.1 micron to about 0.8 micron.
- Gold-containing powders of the present invention are useful in making electrically conductive features for a variety of microelectronic devices.
- Precursors used for the gold in gold-containing powders are typically water- soluble gold salts, with chloride salts being preferred.
- the gold is typically present in the powders in a metallic phase, which may include substantially only gold or may include the gold in an alloy with one or more other metals.
- Alloying elements include, but are not limited to, palladium (Pd), silver (Ag), nickel (Ni), tungsten (W), molybdenum (Mo) and platinum (Pt). Particularly preferred are alloys with platinum or palladium.
- the alloying element is typically present in the alloy in an amount of from about 0.1 to about
- the gold-containing powders may have any convenient weight average particle size within the range of the invention, which will vary depending upon the application.
- the weight average particle size will be in a range of from about 0.05 micron to about 2 microns.
- the powder When used to make electrically conductive features in microelectronic devices, the powder preferably has a weight average particle size of from about 0.1 micron to about 1 micron. Platinum-containing powders of the present invention are useful in making electrically conductive features for a variety of microelectronic devices.
- Precursors for the platinum in the platinum-containing powders are typically water-soluble platinum compounds.
- One preferred precursor is choroplatinic acid.
- the platinum is typically present in the powders in a metallic phase, which may include substantially only platinum or may include the platinum in an alloy with one or more other metals.
- Alloying elements include, but are not limited to, palladium (Pd), silver (Ag), nickel (Ni), copper (Cu), tungsten (W), molybdenum (Mo) and gold (Au). Particularly preferred are alloys with gold or palladium.
- the alloying element is typically present in the alloy in an amount of from about 0.1 to about 40 weight percent, with from about 1 to about 15 weight percent being more preferred, based on the total weight of the alloy, with the balance of the alloy typically comprising platinum.
- the platinum-containing powders may have any convenient weight average particle size within the range of the invention, which will vary depending upon the application. For most applications, the weight average particle size will be in a range of from about 0.05 micron to about 2 microns. When used to make electrically conductive features in microelectronic devices, the powder preferably has a weight average particle size of from about 0.1 micron to about 1 micron.
- the metal-containing particles of the present invention may include only a single material phase, which would include the noted metal. Alternatively, the metal-containing particles may be multi-phase, or composite, particles. In multi-phase particles, the metal is present in a first material phase. The particles also include a second material phase that is different than the first material phase. The multi-phase particles may, however, include more than two material phases.
- Single phase particles will typically consist essentially of a single metallic phase of the metal or an alloy including the metal.
- Multi-phase particles also typically include a metallic phase including the metal and also include at least one other phase.
- the other phases that may be present are other metallic phases, that are preferably substantially free of the metal, or nonmetallic phases, that are also preferably substantially free of the metal.
- the metal-containing metallic phase will frequently comprise greater than about 50 weight percent of the metal, preferably greater than about 60 weight percent of the metal, more preferably greater than about 70 weight percent of the metal, even more preferably greater than about 80 weight percent of the metal and most preferably greater than about 90 weight percent of the metal.
- Multi-phase particles may be desirable for a number of reasons, including: (1) a reduction in the amount of an expensive metal that is used in the particle to provide electrical conductivity by inco ⁇ orating a second material phase that is a less expensive filler material; (2) to improve flowability of the particles in a paste and to improve resistance of particles to deformations; (3) to modify physical properties of the particles for improved compatibility with a substrate supporting a conductive film made using the particles, including modifications of the thermal coefficient of linear expansion, modification of sintering/densification characteristics, and modification of surface energy to alter wetability of the particles; and (4) to modify electrical or dielectric properties for customized electronic components.
- multi-phase, metal- containing particles include use as catalysts or catalytic supports and as particles in paste formulations used in thick film applications, including manufacture of multi-layer capacitors, multi-chip components, super capacitors and other electronic components, batteries and fuel cells.
- a significant aspect of the present invention is the extremely high quality, metal- containing, multi -phase particles, preferably including at least one of palladium, silver, nickel, copper, gold and platinum (and especially including at least one of palladium, silver, nickel and copper), that may be made according to the process previously described.
- These multi-phase powders include multi-phase particles having at least a first material phase and a second material phase. Additional material phases may be present, if desired.
- the first material phase includes the metal, and is typically an electrically conductive metallic phase, with the metal being in the form of the substantially pure metal or an alloy with one or more other metal.
- the second material phase which is different than the first material phase, is typically substantially free of the metal.
- the second material phase may be a metallic phase.
- the second material phase may be a substantially pure single metal, or may include an alloy of two or more metals.
- one of palladium, silver, nickel, copper, gold and platinum is in the first material phase, one or more of the remaining of those metals may be present in the second material phase.
- some other metals that may be included in the second material phase include molybdenum, tungsten, tantalum, aluminum, indium, lead, tin, bismuth, and the like.
- the second material phase will be nonmetallic, in which case the second material phase will also typically not be electrically conductive.
- Preferred in a nonmetallic second material phase are certain ceramic materials to would alter the sintering and/or densification characteristics of the particles.
- Control of sintering and/or densification characteristics of the particles is particularly important when the particles are to be used in a thick film paste for manufacture of a metal-containing film on a substrate including a ceramic layer, which is typically dielectric, to more closely match with the sintering and shrinkage characteristics of the powder particles with those of the substrate, thereby reducing the occurrence of problems such as film cracking and delamination. This is particularly important when layers are to be cofired, such as in multi-layer ceramic capacitors and multi-chip modules.
- the second material phase may include an oxide material.
- second material phases including titanates, and especially including a titanate of at least one of barium, strontium, neodymium, calcium, magnesium and lead.
- the titanate may be of a single metal or may be a mixed metal titanate, such as, for example Ba x Sr,. x Ti0 3 .
- the titanate compositions used in electronic devices are typically not pure materials, but may have small amounts of other materials.
- the multi-phase particles of the present invention may typically be used in place of single phase metallic particles for most application, so long as the proportion of the second material phase making up the particles is small enough not to be detrimental to the application. Often, however, the use of multi -phase particles significantly enhances the performance of films made using the particles relative to the use of single phase metallic particles.
- the multi-phase particles of the present invention is to form a film including the metal in a metallic phase, often electrically conductive, adjacent to a layer of nonmetallic material, often dielectric.
- the multi-phase particles will typically include in the second phase a nonmetallic material that enhances suitability for use with the nonmetallic layer, resulting in improved compatibility and bonding between the nonmetallic layer and the electrically conductive film including the metallic phase.
- the multi -phase metal-containing particles will include in the second material phase a nonmetallic material that is also present in an adjacent nonmetallic layer.
- the nonmetallic layer is of a dielectric material, that dielectric material is also present in the second material phase.
- the multi-phase particles could include in the second phase a ceramic material that is also present in the ceramic layer.
- titanate materials are often used in the dielectric layers of multi-layer ceramic capacitors, and the metal-containing particles used to make internal electrodes for multi- layer ceramic capacitors could include in the second material phase the same titanate that is present in the dielectric layers.
- Electronic devices made using the multi-phase particles of the present invention, and especially multi-layer ceramic capacitors having internal electrode layers made using the particles, and the methods for making such devices are within the scope of the present invention.
- the second material phase of the particles typically comprises less than about 30 weight percent of the particles, preferably less than about 20 weight percent of the particles, and more preferably less than about 10 weight percent of the particles.
- Multiphase particles having a very low content of the second material phase are generally preferred when the particles will be used to make electrically conductive features, because the second material phase is typically dielectric and reduces electrical conductivity.
- the second material phase typically comprises less than about 10 weight percent of the particles, more preferably less than about 5 weight percent of the particles, and even more preferably less than about 2 weight percent of the particles; but the second material phase will typically be at least about 0.1 weight percent, and more preferably at least 0.5 weight percent, of the particles.
- the use of the multiphase particles to make electrically conductive films will typically result in improved adhesion for better bonding with the dielectric layer, thereby reducing the potential for delaminations.
- One particularly preferred powder of multi-phase particles includes a metallic first material phase, which is preferably electrically conductive, and a second material phase including a ceramic material of at least one of silica, alumina, zirconia and titania, with the second material phase preferably being dielectric.
- the first material phase is a metallic phase including at least one of palladium, silver, nickel, copper, gold and platinum.
- Especially preferred in the first material phase is at least one of palladium, silver, nickel and copper.
- the powder will typically include the first material phase as the predominant phase, especially when the particles are designed for use to make electrically conductive thick film features.
- the second material phase includes zirconia or titania, however, the second material phase may be the predominant phase, especially when the particles are designed for use as catalysts.
- Another particularly preferred powder of the present invention including multi- phase particles includes an electrically conductive metallic first material phase, typically as the predominant phase, and a second material phase including a titanate.
- the titanate is of one or more of barium, strontium, neodymium, calcium, magnesium and lead.
- Particularly preferred titanates are barium titanate and neodymium titanate.
- the first material phase preferably includes one or more of palladium, silver, nickel, copper, gold and platinum, and especially one or more of palladium, silver, nickel and copper.
- Yet another particularly preferred powder of multi-phase particles includes the metallic first phase and a second phase including carbon.
- the carbon is typically an electrically conductive form of carbon, such as in the form of graphite or carbon black.
- the metallic phase preferably includes one or more of palladium, silver, nickel, copper, gold and platinum.
- the particles typically include the second material phase as the predominant phase.
- the first material phase typically is used as a catalyst.
- These multi- phase particles are particularly well suited for use as catalysts and, depending upon the metal, electrode materials, and especially as electrode materials in electrochemical cells.
- These multi-phase powders may also be advantageously used as conductive filler particles in electrically conductive adhesive formulations.
- One preferred powder includes silver as the metallic phase, especially for use as a cathode material for zinc-air batteries or for fuel cells.
- Another preferred powder includes platinum, especially for use as cathode material for fuel cells.
- the powder will contain less than about 20 weight percent of the first material phase and preferably less than about 10 weight percent of the first material phase.
- the particles will, however, typically include at least about 1 weight percent of the first material phase, preferably at least 2 weight percent of the first material phase and more preferably at least about 5 weight percent of the first material phase.
- Particularly preferred is for the powder to include from about 5 weight percent to about 10 weight percent of the first material phase, and especially about 7 weight percent of the first material phase.
- a metal-containing precursor for the first material phase and a second precursor for the second material phase may both be included in the liquid feed 102 (referring back to Figures 1-44 and the discussion relating thereto).
- both precursors could be in solution in a flowable liquid of the liquid feed 102.
- one or both of the precursors could be particles suspended in the flowable liquid.
- the liquid feed 102 could include more than two precursors for the multi-phase particles.
- the metal-containing precursor could initially be in the liquid feed 102, which is then processed in aerosol form in the furnace 110 to prepare metal-containing precursor particles.
- the precursor particles are then coated with the second material phase in a separate step, in a manner similar to that described previously with reference to Figure 41.
- This two-step process of initially preparing metal-containing precursor particles and then coating the precursor particles on the fly in an aerosol state is particularly advantageous because problems are avoided that are encountered in particle manufacture procedures, such as liquid route precipitation, in which precursor particles would have to be collected and then redispersed prior to coating. Not only is collection and redispersion cumbersome, but problems are often encountered due to particle agglomeration, which is avoided with the on-the-fly coating of the present invention.
- Avoidance of particle agglomeration is very important when a uniform particle coating is desired.
- the multi-phase particles of the present invention may include a variety of particle mo ⁇ hologies.
- the multi- phase particles may include an intimate mixture of the first material phase and the second material phase, as in the multi-phase particle 500.
- the first material phase is a continuous phase throughout which the second material phase is dispersed.
- Another possible mo ⁇ hology is for the first material phase to be in the form of a large core that is covered by a thin coating layer of the second material phase, as shown for particles 502 and 504 in Figure 43.
- the multi-phase particles could also include a small core of one material phase surrounded by a thick layer of the other material phase, as shown for particle 506. Also, the first and second material phase could completely segregate in a manner shown for particle 508. Furthermore, the multi-phase particles are not limited to two material phases. For example, particle 510 in Fig.
- FIG. 43 shows a multi-phase particle including a core of second material phase domains dispersed in a matrix of the first material phase, and with the core being coated by a third material phase.
- first material phase and the second material phase could constitute any of the phases in particles 500,
- the first material phase which includes the metal
- the second material phase will be the less abundant phase.
- the second material phase will often be in the form of a coating around a core including the first material phase.
- the first material phase may be a coating or a disperse phase on the surface of a support of the second material phase.
- the first material phase will typically be the continuous phase and the second material phase will typically be the disperse phase.
- the multi-phase particles will include greater than about 50 weight percent of the first material phase, more preferably greater than about 60 weight percent of the first material phase, even more preferably greater than about 70 weight percent of the first material phase and most preferably greater than about 80 weight percent of the first material phase.
- the first material phase may comprise 90 weight percent or more of the particles.
- the second material phase typically will comprise less than about 50 weight percent of the multi-phase particles, preferably less than about 40 weight percent, more preferably less than about 30 weight percent and even more preferably less than about 20 weight percent.
- the second material phase may comprise 10 percent or less of the particles. Even in the case of coated particles, however, the second material phase will typically comprise greater than about 0.5 weight percent, and preferably greater than about 1 weight percent, of the particles.
- One preferred class of multi-phase particles are coated particles in which the first material phase forms a core and the second material phase forms a thin coating layer about the outer surface of the core.
- the second material phase may include any of the materials previously listed as being suitable for the second material phase.
- the coating including the second material phase may be made as a relatively uniform layer that substantially entirely covers the core of the first material phase.
- One method for making multi-phase particles including the second material phase as a uniform coating is as described previously with reference to Figure 41.
- the second material phase is typically formed on a precursor particle, which includes the first material phase, by techniques as previously described.
- a preferred coating technique is CVD.
- CVD is a well known deposition technique in which a precursor for the second material phase is reacted in the vapor phase to form the second material phase. Any known precurser for CVD deposition of the desired coating material may be used.
- a vaporous silane precursor such as silicon tetrachloride
- a vaporous silane precursor such as silicon tetrachloride
- a coating deposited by CVD or by PVD will result in an average coating thickness of from about 10 nanometers to about 200 nanometers.
- Preferred coatings have an average thickness of thinner than about 100 nanometers, more preferably thinner than about 50 nanometers and most preferably thinner than about 25 nanometers.
- coated multi-phase particles include the manufacture of electrically conductive films for electronic devices, such as multi-layer capacitors and multi-chip modules.
- the coating is useful to beneficially alter the sintering and/or shrinkage characteristics of the particle for improved compatibility with a ceramic substrate.
- coated multi-phase particles Another way to make coated multi-phase particles is to provide precursors for both the first material phase and the second material phase in the feed liquid 102 (as described with respect to Figures 1-44).
- each precursor in the feed liquid 102 could be either in the liquid phase, e.g., in solution in a flowable liquid, or in the form of particles suspended by the flowable liquid.
- the multi-phase particles would then form in the furnace 110 as liquid is removed from aerosol droplets. It should be noted that, in the case of multiple phases forming simultaneously in the furnace, the different phases are typically initially formed as an intimate mixture of the phases.
- a first precursor for the metal- containing first material phase could comprise preformed metal-containing particles to be coated.
- the precursor for the second material phase could also be in particulate form, or could be in solution in a liquid phase.
- a soluble precursor such as from dissolution of a metal alkoxide could be used as a precursor for the second material phase.
- metal alkoxides it should be recognized that in aqueous solution the dissolved metal alkoxide usually reacts to form other soluble components, which will function as a soluble precursor. This could be the case in the preparation of particles including titania or alumina as the second material phase.
- the precursor will typically be small silica particles, which are preferably of colloidal size, or silica dissolved in solution.
- the manufacture of multi-phase particles with an intimately mixed mo ⁇ hology for the different material phases is typically accomplished by initially including a precursor for both the first material phase and the second material phase in a liquid feed 102, as previously described.
- the process may be substantially the same as the process used to prepare particles with a coating mo ⁇ hology, except the processing conditions may be altered so that the material phases do not redistribute, and are instead retained in an intimately mixed state.
- lower operating temperatures in the furnace 110 and shorter residence times, with rapid particle cooling promote an intimate mixture of the phases.
- Multi-phase particles of an intimately mixed mo ⁇ hology are particularly useful for modifying sintering/densification temperatures of the particle, reducing shrinkage that occurs during firing in thick film applications, and modifying the electrical or other properties of the particle for special applications.
- Phosphors are materials which are capable of emitting radiation in the visible or ultraviolet spectral range upon excitation, such as excitation by an external electric field or other external energy source.
- Phosphors include a matrix compound, referred to as a host material, and the phosphor typically further includes one or more dopants, referred to as activator ions, to emit a specific color or to enhance the luminescence characteristics.
- Particular phosphor compounds may be preferred for certain applications and no single phosphor compound is necessarily preferred for all possible applications.
- preferred phosphor host materials for some display applications include the Group II sulfides (e.g., CaS, SrS, BaS, MgS, Mg x Sr, .x S and Ca x Sr,. x S) and the Group XII sulfides (e.g., ZnS, CdS and Zn x Cd,. x S).
- ZnS is particularly preferred for many display applications, particularly those utilizing high voltages (i.e. greater than about 2000 volts), due primarily to the high brightness of ZnS.
- ZnS is typically doped with Cu, Ag, Al, Au, Cl or mixtures thereof.
- ZnS:Ag +l is a common phosphor used to produce blue light in a CRT device.
- Y 2 O 3 doped with Eu 3+ (Y 2 0 3 :Eu 3+ ) is often preferred for emitting red light.
- BaMgAl, ,O 17 :Eu 2+ (BAM:Eu 2+ ) is also a common oxide for producing red light.
- Other compounds that would be useful if available include SrGa 2 S 4 :Eu 2+ , SrGa 2 S 4 :Ce 3+ , CaGa 2 S 4 :Eu 2+ and CaGa ⁇ Ce ⁇ .
- Preferred phosphor host compounds and activators for particular applications are discussed in more detail hereinbelow.
- the powder characteristics that are preferred will depend upon the application of the phosphor powders. Nonetheless, it can be generally stated that the powders should usually have a small particle size, narrow size distribution, spherical mo ⁇ hology, high density/low porosity, high crystallinity and homogenous dopant distribution.
- the efficiency of the phosphor defined as the overall conversion of excitation energy to visible photons, should be high.
- the average particle size is more preferably from about 0.1 micron to about 4 microns and even more preferably is from about 0.5 micron to about 2 microns.
- the phosphor particles producible according to the present invention can be substantially single crystal particles or may be comprised of a number of crystallites. It is possible according to the present invention to produce phosphor particles having large crystallites. Crystallite size can be determined from the width of the x-ray diffraction peaks of the material. Large crystallites give rise to sha ⁇ peaks, while the peak width increases as crystallite size decreases. It is preferred that the average crystallite size within the particles is at least about
- the average crystallite size most preferably approaches the average particle size such that the particles are mostly single crystals.
- the average crystallite size is at least about 50 percent and more preferably at least about 80 percent of the average particle size.
- Highly crystalline phosphors i.e. large crystallite size are believed to have increased efficiency as compared to phosphors with smaller crystallites.
- the phosphor particles producible according to the present invention advantageously have a high degree of purity, that is, a low level of impurities.
- Impurities are those materials that are not intended in the final product ⁇ thus, an activator ion is not considered an impurity.
- the level of impurities in the phosphor powders of the present invention is preferably less than about 0.1 weight percent and is more preferably less than about 0.01 weight percent. Further, the activator ion is homogeneously dispersed throughout the host material.
- the particles of the present invention are also substantially spherical in shape. Spherical particles are particularly advantageous because they are able to disperse and coat a device more uniformly. As a result, the phosphor powder batch of the present invention is substantially non-agglomerated and has good dispersibility in a variety of media.
- Coatings are often desirable to reduce degradation of the phosphor material due to moisture or other influences such as the plasma in a plasma display device or electron bombardment in cathodoluminescent devices.
- metal sulfides such as ZnS are particularly susceptible to degradation due to moisture and should be completely encapsulated to reduce or eliminate the degradation reaction.
- Other phosphors are known to degrade in an electron beam operating at a high current density, such as in field emission displays and CRT's.
- Preferred coatings include metal oxides such as Si0 2 , MgO, A1 2 0 3 , Sn0 2 or ln 2 0 3 .
- Semiconductive oxide coatings such as SnO or In 2 O 3 can advantageously absorb secondary electrons that are often emitted by the phosphor.
- the coatings can be either particulate coatings or non-particulate (film) coatings.
- the coatings should be relatively thin and uniform.
- the coating has an average thickness of less than about 1 micron and more preferably the average coating thickness is from about 5 nanometers to about 100 nanometers.
- the particles can include more than one coating substantially encapsulating the particles to achieve the desired properties.
- the phosphor particles can include organic coatings such as PMMA (polymethylmethacrylate), polystyrene or the like.
- the organic coating should be on the order of 1 to 100 nanometers thick and be substantially dense and continuous about the particle. Such coatings can be formed after the powders are prepared by a liquid phase process.
- the organic coatings can advantageously prevent corrosion of the phosphor particles especially in electroluminiscent lamps and also can improve the dispersion characteristics of the particles.
- the coating can also be a monolayer coating formed by the reaction of an organic or an inorganic molecule with the surface of the phosphor particles to form a coating that is essentially one molecular layer thick.
- a monolayer coating by reaction of the surface of the phosphor powder with a functionalized organo silane such as halo- or amino-silanes, for example hexamethyldisilazane or trimethylsilylchloride, can be used to modify/control the hydrophobicity and hydrophilicity of the phosphor powders.
- a functionalized organo silane such as halo- or amino-silanes, for example hexamethyldisilazane or trimethylsilylchloride
- the monolayer coatings may also be applied to phosphor powders that have already been coated with, for example, 1-100 nanometer organic or inorganic coatings thus providing better control over the corrosion characteristics (through the use of thicker coating) as well as dispersibility (through the monolayer coating) of the phosphor powder.
- doped metal sulfide phosphors can be prepared from an aqueous solution by the reaction of a metal carbonate (or oxide or hydroxide) with thiourea or a sulfur-containing acid such as thioacetic acid or thiocarboxylic acid
- the solution preferably has a phosphor precursor concentration that is unsaturated to avoid the formation of precipitates and preferably includes from about 1 to about 50 weight percent of the precursor.
- the solvent is aqueous-based for ease of operation, although other solvents, such as toluene, may be desirable for specific materials.
- the use of organic solvents can lead to undesirable carbon concentration in the phosphor particles.
- the pH of the aqueous-based solutions can be adjusted to alter the solubility characteristics of the precursor in the solution.
- the maximum average stream temperature in the furnace when making phosphor powders are typically in a range of from about 500°C to about 1800°C, depending upon the phosphor that is being produced.
- the powders can be heated for varying amounts of time and in different environments to increase the crystallinity of the phosphor. Increased crystallinity will lead to increased brightness and efficiency of the phosphor. If such annealing steps are performed, the annealing temperature and time should be selected to minimize the amount of inte ⁇ article sintering that is often associated with annealing. For example, yttria-based phosphors annealed at 1400°C under air for 58 hours can advantageously increase in brightness intensity by 160 percent or more due to an increase in the crystallite size.
- the crystallinity of the phosphors can be increased by using a fluxing agent, either in the precursor solution or in a post-formation annealing step.
- a fluxing agent is a reagent which improves the crystallinity of the material when the reagent and the material are heated together as compared to heating the material to the same temperature and for the same amount of time in the absence of the fluxing agent.
- the fluxing agent for example alkali metal halides such as NaCl or KCl, can be added to the precursor solution where it improves the crystallinity of the particles during their subsequent formation.
- the fluxing agent can be added to the phosphor powder batches after they have been collected. Upon annealing, the fluxing agent improves the crystallinity of the phosphor powder, and therefore improves the brightness of the phosphor powder.
- phosphor particles may be desirable to form phosphor particles with coatings thereon to enhance the stability or other properties of the phosphor powders.
- the phosphor powders of the present invention can be coated using several different methods.
- a colloidal phosphor powder and a soluble, involatile molecular precursor to the coating can be suspended in the droplets so that the coating forms around the phosphor when passed through the heating zone of the furnace.
- a soluble precursor to both the phosphor powder and the coating can be used in the precursor solution wherein the coating precursor is involatile (e.g. A1(N0 3 ) 3 ) or volatile (e.g., Sn(OAc) 4 ).
- a colloidal precursor and a soluble phosphor precursor can be used to form a particulate colloidal coating on the phosphor.
- a volatile coating precursor or precursor solution is sprayed into the furnace after a point where the phosphor particles have already been formed.
- the precursor reacts to form a coating on the phosphor particle surface.
- These coatings can be generated by two different mechanisms. First, the precursor can vaporize and diffuse to the hot particle surface and thermally react resulting in the formation of a thin-film by chemical vapor deposition (CVD).
- the gaseous precursor can react in the gas phase forming small particles (e.g. less than about 5 nanometers) which can then diffuse to the particle surface and sinter onto the surface forming a coating. This reaction mechanism is referred to as gas to particle conversion (GPC).
- GPC gas to particle conversion
- a volatile coating material such as PbO, Mo0 3 or V,0 5 , can be introduced into the reactor such that the coating deposits on the particle by condensation.
- An additional heating zone such as a second elongated tubular furnace, can be added after the main furnace, but before the quench system, to coat the phosphor particles with the desired coating.
- This example demonstrates preparation of multi-phase particles of either neodymium titanate or barium titanate with various metals.
- a titanate precursor solution is prepared for each of barium titanate and neodymium titanate.
- the barium titanate precursor solution is prepared by dissolving barium nitrate in water and then, with rapid stirring, adding titanium tetraisopropoxide.
- a fine precipitate is formed. Sufficient nitric acid is added to completely dissolve the precipitate.
- Precursor solutions of various metals are prepared by dissolving the metal salt in water.
- the neodymium titanate precursor solution is prepared in the same way except using neodymium nitrate.
- the titanate precursor solution and the metal precursor solution are mixed in various relative quantities to obtain the desired relative quantities of titanate and metal components in the final particles.
- the mixed solutions are aerosolized in an ultrasonic aerosol generator with transducers operated at 1.6 MHz and the aerosol is sent to a furnace where droplets in the aerosol are pyrolized to form the desired multi-phase particles.
- Air or nitrogen is used as a carrier gas, with tests involving copper and nickel also including hydrogen in an amount of 2.8 volume percent of the carrier gas.
- a variety of materials are made according to the process of the present invention, with some materials being made with and some being made without droplet classification prior to the furnace.
- Various single phase and multi-phase (or composite) particles are made as well as several coated particles. Tables 3 through 8 tabulate various of these materials and conditions of manufacture.
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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DE69819740T DE69819740T2 (en) | 1997-02-24 | 1998-02-24 | AEROSOL METHOD AND DEVICE, PARTICULATE PRODUCTS, AND ELECTRONIC DEVICES MADE THEREOF |
JP53695898A JP2001513697A (en) | 1997-02-24 | 1998-02-24 | Aerosol method and apparatus, particle product, and electronic device manufactured from the particle product |
AU64383/98A AU6438398A (en) | 1997-02-24 | 1998-02-24 | Aerosol method and apparatus, particulate products, and electronic devices made therefrom |
EP98910041A EP1007308B1 (en) | 1997-02-24 | 1998-02-24 | Aerosol method and apparatus, particulate products, and electronic devices made therefrom |
CA002280865A CA2280865C (en) | 1997-02-24 | 1998-02-24 | Aerosol method and apparatus, particulate products, and electronic devices made therefrom |
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US3945097P | 1997-02-24 | 1997-02-24 | |
US3825897P | 1997-02-24 | 1997-02-24 | |
US60/038,258 | 1997-02-24 | ||
US60/039,450 | 1997-02-24 |
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US6771019B1 (en) | 1999-05-14 | 2004-08-03 | Ifire Technology, Inc. | Electroluminescent laminate with patterned phosphor structure and thick film dielectric with improved dielectric properties |
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US7137968B1 (en) * | 2000-03-13 | 2006-11-21 | Nucryst Pharmaceuticals Corp. | Transcutaneous medical device dressings and method of use |
US6719987B2 (en) | 2000-04-17 | 2004-04-13 | Nucryst Pharmaceuticals Corp. | Antimicrobial bioabsorbable materials |
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US20030180379A1 (en) * | 2000-07-27 | 2003-09-25 | Burrell Robert E. | Solutions and aerosols of metal-containing compounds |
US7427416B2 (en) * | 2000-07-27 | 2008-09-23 | Nucryst Pharmaceuticals Corp. | Methods of treating conditions using metal-containing materials |
US20040191329A1 (en) * | 2000-07-27 | 2004-09-30 | Burrell Robert E. | Compositions and methods of metal-containing materials |
US7001617B2 (en) | 2001-04-23 | 2006-02-21 | Nueryst Pharmaceuticals Corp. | Method of induction of apoptosis and inhibition of matrix metalloproteinases using antimicrobial metals |
US20030185901A1 (en) | 2000-07-27 | 2003-10-02 | Burrell Robert E. | Methods of treating conditions with a metal-containing material |
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US7008647B2 (en) * | 2001-04-23 | 2006-03-07 | Nucryst Pharmaceuticals Corp. | Treatment of acne |
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CA2445740A1 (en) | 2001-04-23 | 2002-10-31 | Nucryst Pharmaceuticals Corp. | Use of metals to treat inflammatory skin conditions |
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US6855426B2 (en) * | 2001-08-08 | 2005-02-15 | Nanoproducts Corporation | Methods for producing composite nanoparticles |
US20030108664A1 (en) * | 2001-10-05 | 2003-06-12 | Kodas Toivo T. | Methods and compositions for the formation of recessed electrical features on a substrate |
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US6689192B1 (en) * | 2001-12-13 | 2004-02-10 | The Regents Of The University Of California | Method for producing metallic nanoparticles |
US6719946B2 (en) * | 2001-12-20 | 2004-04-13 | Fuelcell Energy, Inc. | Anode support for carbonate fuel cells |
US7334485B2 (en) | 2002-02-11 | 2008-02-26 | Battelle Energy Alliance, Llc | System, method and computer-readable medium for locating physical phenomena |
US7276264B1 (en) * | 2002-02-11 | 2007-10-02 | Battelle Energy Alliance, Llc | Methods for coating conduit interior surfaces utilizing a thermal spray gun with extension arm |
US6889557B2 (en) * | 2002-02-11 | 2005-05-10 | Bechtel Bwxt Idaho, Llc | Network and topology for identifying, locating and quantifying physical phenomena, systems and methods for employing same |
US7201925B2 (en) * | 2002-04-23 | 2007-04-10 | Nueryst Pharmaceuticals Corp. | Treatment of ungual and subungual diseases |
JP3767514B2 (en) * | 2002-04-26 | 2006-04-19 | 株式会社村田製作所 | Conductive paste |
JP3744469B2 (en) * | 2002-06-07 | 2006-02-08 | 株式会社村田製作所 | Conductive paste |
US7736693B2 (en) * | 2002-06-13 | 2010-06-15 | Cima Nanotech Israel Ltd. | Nano-powder-based coating and ink compositions |
US7566360B2 (en) * | 2002-06-13 | 2009-07-28 | Cima Nanotech Israel Ltd. | Nano-powder-based coating and ink compositions |
US7601406B2 (en) * | 2002-06-13 | 2009-10-13 | Cima Nanotech Israel Ltd. | Nano-powder-based coating and ink compositions |
JP2004039735A (en) * | 2002-07-01 | 2004-02-05 | Fujitsu Ltd | Semiconductor substrate and its manufacturing method |
JP2004139838A (en) * | 2002-10-17 | 2004-05-13 | Noritake Co Ltd | Conductive paste and its use |
AU2003286575A1 (en) * | 2002-10-22 | 2004-05-13 | Nucryst Pharmaceuticals Corp. | Prophylactic treatment methods |
US7708974B2 (en) | 2002-12-10 | 2010-05-04 | Ppg Industries Ohio, Inc. | Tungsten comprising nanomaterials and related nanotechnology |
US7097684B2 (en) * | 2002-12-12 | 2006-08-29 | Aaf-Mcquay, Inc. | Method of forming combined pleated scrim and filter media materials and product of same |
US20060032332A1 (en) * | 2003-03-13 | 2006-02-16 | Kazumasa Ohnishi | Cutting tool and cutting machine |
US6831529B1 (en) * | 2003-05-20 | 2004-12-14 | Lambert Devoe | Feed-through filter capacitor assembly |
WO2004112799A1 (en) * | 2003-06-13 | 2004-12-29 | Chrysalis Technologies Incorporated | Methods and apparatus for producing nanoscale particles |
US7108733B2 (en) * | 2003-06-20 | 2006-09-19 | Massachusetts Institute Of Technology | Metal slurry for electrode formation and production method of the same |
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WO2005019096A1 (en) * | 2003-08-23 | 2005-03-03 | Chul-Sang Jeong | Nanocomposite solution with complex function and method for preparation thereof |
US7276385B1 (en) | 2003-11-24 | 2007-10-02 | Kovio, Inc. | Methods of laser repairing a circuit, compositions and equipment for such methods, and structures formed from such methods |
US7595085B2 (en) * | 2004-03-09 | 2009-09-29 | Delphi Technologies, Inc. | Ceramic assembly with a stabilizer layer |
JP3867232B2 (en) * | 2004-03-25 | 2007-01-10 | 株式会社 東北テクノアーチ | Catalyst nanoparticles |
CN1950163A (en) * | 2004-04-16 | 2007-04-18 | 独立行政法人物质·材料研究机构 | Colloidal solution of fine metal particles, electroconductive pasty material, electroconductive ink material and method for producting them |
US7169208B2 (en) * | 2004-06-10 | 2007-01-30 | Inco Limited | Method and composition for dispersing extra-fine nickel powder |
US20060083694A1 (en) | 2004-08-07 | 2006-04-20 | Cabot Corporation | Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same |
WO2006083326A2 (en) * | 2004-08-07 | 2006-08-10 | Cabot Corporation | Gas dispersion manufacture of nanoparticulates and nanoparticulate-containing products and processing thereof |
WO2006042109A2 (en) * | 2004-10-08 | 2006-04-20 | Sdc Materials, Llc | An apparatus for and method of sampling and collecting powders flowing in a gas stream |
US20060090601A1 (en) * | 2004-11-03 | 2006-05-04 | Goia Dan V | Polyol-based method for producing ultra-fine nickel powders |
US20060102228A1 (en) * | 2004-11-12 | 2006-05-18 | Ferro Corporation | Method of making solar cell contacts |
KR100669802B1 (en) * | 2004-12-04 | 2007-01-16 | 삼성에스디아이 주식회사 | A thin film transistor, a method for preparing the thin film transistor and a flat panel display device employing the same |
US7687724B2 (en) * | 2005-01-10 | 2010-03-30 | Endicott Interconnect Technologies, Inc. | Circuitized substrate with internal resistor, method of making said circuitized substrate, and electrical assembly utilizing said circuitized substrate |
US7235745B2 (en) * | 2005-01-10 | 2007-06-26 | Endicott Interconnect Technologies, Inc. | Resistor material with metal component for use in circuitized substrates, circuitized substrate utilizing same, method of making said ciruitized substrate, and information handling system utilizing said ciruitized substrate |
US8383014B2 (en) | 2010-06-15 | 2013-02-26 | Cabot Corporation | Metal nanoparticle compositions |
WO2006076611A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Production of metal nanoparticles |
US7824466B2 (en) * | 2005-01-14 | 2010-11-02 | Cabot Corporation | Production of metal nanoparticles |
US8334464B2 (en) | 2005-01-14 | 2012-12-18 | Cabot Corporation | Optimized multi-layer printing of electronics and displays |
US7245024B2 (en) * | 2005-01-21 | 2007-07-17 | Delphi Technologies, Inc. | Electronic assembly with reduced leakage current |
WO2006078827A2 (en) * | 2005-01-21 | 2006-07-27 | Cabot Corporation | Controlling flame temperature in a flame spray reaction process |
US7345255B2 (en) * | 2005-01-26 | 2008-03-18 | Caterpillar Inc. | Composite overlay compound |
WO2008140785A1 (en) * | 2005-04-19 | 2008-11-20 | Sdc Materials, Inc. | Water cooling system and heat transfer system |
US20070044295A1 (en) * | 2005-05-12 | 2007-03-01 | Nanosys, Inc. | Use of nanoparticles in film formation and as solder |
EP1896215B1 (en) * | 2005-06-08 | 2015-07-15 | Toyota Jidosha Kabushiki Kaisha | Metal oxide nanoparticles and process for producing the same |
KR101300442B1 (en) * | 2005-06-10 | 2013-08-27 | 시마 나노 테크 이스라엘 리미티드 | Enhanced transparent conductive coatings and methods for making them |
WO2006135128A1 (en) * | 2005-06-13 | 2006-12-21 | Ki Yang Hwang | Mass production method of nano silver, manufacturing method of germicide fiber coated with nano silver and its products |
US7732330B2 (en) | 2005-06-30 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method using an ink-jet method of the same |
US20070158621A1 (en) * | 2005-07-19 | 2007-07-12 | Kyocera Corporation | Conductive Paste, Solar Cell Manufactured Using Conductive Paste, Screen Printing Method and Solar Cell Formed Using Screen Printing Method |
JP5071854B2 (en) * | 2005-09-12 | 2012-11-14 | 独立行政法人科学技術振興機構 | Fine particle-protein complex, method for producing the same, semiconductor device, and fluorescent labeling method |
US7504157B2 (en) * | 2005-11-02 | 2009-03-17 | H.C. Starck Gmbh | Strontium titanium oxides and abradable coatings made therefrom |
DE102006011453A1 (en) * | 2006-03-13 | 2007-09-20 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Highly resistant plastic component suitable for luminescence |
JP4967388B2 (en) * | 2006-03-15 | 2012-07-04 | パナソニック株式会社 | Method for manufacturing ceramic multilayer device and ceramic multilayer device |
WO2007125879A1 (en) * | 2006-04-25 | 2007-11-08 | Sharp Corporation | Electroconductive paste for solar battery electrode |
JP4978237B2 (en) * | 2006-04-27 | 2012-07-18 | 昭栄化学工業株式会社 | Method for producing nickel powder |
US8105643B2 (en) * | 2006-05-31 | 2012-01-31 | Cabot Corporation | Process for printing features with smaller dimensions |
JP2009542006A (en) * | 2006-06-19 | 2009-11-26 | キャボット コーポレイション | Photovoltaic conductive functional material and method for forming the same |
KR101421412B1 (en) * | 2006-06-21 | 2014-07-22 | 코닌클리케 필립스 엔.브이. | Light emitting device with a at least one ceramic spherical color converter material |
US20080050452A1 (en) * | 2006-06-30 | 2008-02-28 | Nucryst Pharmaceuticals | Metal-containing formulations and methods of use |
US7879131B2 (en) * | 2006-08-15 | 2011-02-01 | Applied Nanotech Holdings, Inc. | Metal encapsulation |
US8159825B1 (en) | 2006-08-25 | 2012-04-17 | Hypres Inc. | Method for fabrication of electrical contacts to superconducting circuits |
US8231369B2 (en) * | 2006-10-24 | 2012-07-31 | Beneq Oy | Device and method for producing nanoparticles |
US7842181B2 (en) | 2006-12-06 | 2010-11-30 | Saudi Arabian Oil Company | Composition and process for the removal of sulfur from middle distillate fuels |
FR2910706B1 (en) * | 2006-12-21 | 2009-03-20 | Commissariat Energie Atomique | INTERCONNECTION ELEMENT BASED ON CARBON NANOTUBES |
KR101528940B1 (en) * | 2006-12-27 | 2015-06-15 | 에버레디 배터리 컴퍼니, 인크. | Process for making a catalytic electrode and electrochemical cell using the electrode |
US9580810B2 (en) | 2007-02-27 | 2017-02-28 | Mitsubishi Materials Corporation | Dispersion of metal nanoparticles, method for producing the same, and method for synthesizing metal nanoparticles |
DE102007015874A1 (en) * | 2007-04-02 | 2008-10-09 | Robert Bosch Gmbh | Process for producing a porous layer |
WO2008150867A2 (en) | 2007-05-29 | 2008-12-11 | Innova Materials, Llc | Surfaces having particles and related methods |
US20080296567A1 (en) * | 2007-06-04 | 2008-12-04 | Irving Lyn M | Method of making thin film transistors comprising zinc-oxide-based semiconductor materials |
CN100482382C (en) * | 2007-06-15 | 2009-04-29 | 中国科学技术大学 | Method for preparing titanium dioxide hollow sphere containing gold nano particles |
US8058195B2 (en) * | 2007-06-19 | 2011-11-15 | Cabot Corporation | Nanoglass and flame spray processes for producing nanoglass |
EP2025603A1 (en) * | 2007-07-11 | 2009-02-18 | Aisapack Holding SA | Plastic bottle for hot filling or heat treatment |
JP5297011B2 (en) * | 2007-07-26 | 2013-09-25 | 太陽誘電株式会社 | Multilayer ceramic capacitor and manufacturing method thereof |
US8058194B2 (en) | 2007-07-31 | 2011-11-15 | Kimberly-Clark Worldwide, Inc. | Conductive webs |
US8697934B2 (en) * | 2007-07-31 | 2014-04-15 | Kimberly-Clark Worldwide, Inc. | Sensor products using conductive webs |
US8507401B1 (en) | 2007-10-15 | 2013-08-13 | SDCmaterials, Inc. | Method and system for forming plug and play metal catalysts |
US8142646B2 (en) | 2007-11-30 | 2012-03-27 | Saudi Arabian Oil Company | Process to produce low sulfur catalytically cracked gasoline without saturation of olefinic compounds |
US8101231B2 (en) * | 2007-12-07 | 2012-01-24 | Cabot Corporation | Processes for forming photovoltaic conductive features from multiple inks |
WO2009085651A1 (en) * | 2007-12-20 | 2009-07-09 | Nucryst Pharmaceuticals Corp. | Metal carbonate particles for use in medicine and methods of making thereof |
WO2009090748A1 (en) * | 2008-01-17 | 2009-07-23 | Applied Nanoparticle Laboratory Corporation | Silver composite nanoparticle and process and apparatus for producing the same |
WO2009105749A2 (en) | 2008-02-21 | 2009-08-27 | Saudi Arabian Oil Company | Catalyst to attain low sulfur gasoline |
US8132337B1 (en) * | 2008-02-27 | 2012-03-13 | Robert Batey | Method and apparatus for drying wood particles/sawdust and other particulate matter |
US8561043B2 (en) * | 2008-03-28 | 2013-10-15 | International Business Machines Corporation | Data transfer optimized software cache for irregular memory references |
US20090250097A1 (en) * | 2008-04-07 | 2009-10-08 | Eric Ting-Shan Pan | Solar-To-Electricity Conversion System |
USD627900S1 (en) | 2008-05-07 | 2010-11-23 | SDCmaterials, Inc. | Glove box |
US7944401B2 (en) * | 2008-05-29 | 2011-05-17 | Kimberly-Clark Worldwide, Inc. | Radiating element for a signal emitting apparatus |
MX2010013034A (en) * | 2008-05-29 | 2010-12-21 | Kimberly Clark Co | Conductive webs containing electrical pathways and method for making same. |
TW200952301A (en) * | 2008-06-02 | 2009-12-16 | Inpaq Technology Co Ltd | Electro-static discharge protection device with low temperature co-fire ceramic and manufacturing method thereof |
US8507403B2 (en) * | 2008-06-27 | 2013-08-13 | Cabot Corporation | Process for producing exhaust treatment catalyst powders, and their use |
JP2012500332A (en) * | 2008-08-13 | 2012-01-05 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | Multi-element metal powder for silicon solar cells |
US8294024B2 (en) * | 2008-08-13 | 2012-10-23 | E I Du Pont De Nemours And Company | Processes for forming photovoltaic devices |
US10105875B2 (en) | 2008-08-21 | 2018-10-23 | Cam Holding Corporation | Enhanced surfaces, coatings, and related methods |
US7846866B2 (en) * | 2008-09-09 | 2010-12-07 | Guardian Industries Corp. | Porous titanium dioxide coatings and methods of forming porous titanium dioxide coatings having improved photocatalytic activity |
US20100062265A1 (en) * | 2008-09-09 | 2010-03-11 | Guardian Industries Corp. | Titanium Dioxide Coatings and Methods of Forming Titanium Dioxide Coatings Having Reduced Crystallite Size |
US8647652B2 (en) * | 2008-09-09 | 2014-02-11 | Guardian Industries Corp. | Stable silver colloids and silica-coated silver colloids, and methods of preparing stable silver colloids and silica-coated silver colloids |
US20100062032A1 (en) * | 2008-09-09 | 2010-03-11 | Guardian Industries Corp. | Doped Titanium Dioxide Coatings and Methods of Forming Doped Titanium Dioxide Coatings |
US7976734B2 (en) * | 2008-09-10 | 2011-07-12 | E.I. Du Pont De Nemours And Company | Solar cell electrodes |
US8936775B2 (en) | 2008-10-29 | 2015-01-20 | Zpower, Llc | Cathode active material (higher oxides of silver) |
US8545899B2 (en) * | 2008-11-03 | 2013-10-01 | Guardian Industries Corp. | Titanium dioxide coatings having roughened surfaces and methods of forming titanium dioxide coatings having roughened surfaces |
KR101078079B1 (en) * | 2008-12-10 | 2011-10-28 | 엘에스전선 주식회사 | Conductive Paste Containing Silver-Decorated Carbon Nanotubes |
US8710355B2 (en) | 2008-12-22 | 2014-04-29 | E I Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
US8172982B2 (en) * | 2008-12-22 | 2012-05-08 | Kimberly-Clark Worldwide, Inc. | Conductive webs and process for making same |
US7786839B2 (en) * | 2008-12-28 | 2010-08-31 | Pratt & Whitney Rocketdyne, Inc. | Passive electrical components with inorganic dielectric coating layer |
US8729440B2 (en) * | 2009-03-02 | 2014-05-20 | Harris Corporation | Applicator and method for RF heating of material |
US20100237055A1 (en) * | 2009-03-20 | 2010-09-23 | Gm Global Technology Operations, Inc. | Defrosting or defogging structure |
WO2010111567A1 (en) * | 2009-03-27 | 2010-09-30 | Zpower, Inc. | Improved cathode |
MX2011011843A (en) * | 2009-05-12 | 2011-12-08 | Jostens Inc | Gold alloys. |
US8309489B2 (en) * | 2009-06-18 | 2012-11-13 | University Of Central Florida Research Foundation, Inc. | Thermally stable nanoparticles on supports |
EP2445835A1 (en) * | 2009-06-24 | 2012-05-02 | Third Millennium Metals, Llc | Copper-carbon composition |
JP5374788B2 (en) * | 2009-08-31 | 2013-12-25 | シャープ株式会社 | Conductive paste, solar cell electrode, solar cell, and method for manufacturing solar cell |
US8709538B1 (en) | 2009-09-29 | 2014-04-29 | The Boeing Company | Substantially aligned boron nitride nano-element arrays and methods for their use and preparation |
US9469790B2 (en) * | 2009-09-29 | 2016-10-18 | The Boeing Company | Adhesive compositions comprising electrically insulating-coated carbon-based particles and methods for their use and preparation |
US20110076450A1 (en) * | 2009-09-29 | 2011-03-31 | Sharma Pramod K | Titanium dioxide coatings and methods of forming improved titanium dioxide coatings |
KR101206250B1 (en) * | 2009-10-13 | 2012-11-28 | 주식회사 엘지화학 | Paste for preparing mask patterns and Manufacturing method of silicon solar cell using screen-printing of the same |
TWI509867B (en) | 2009-11-03 | 2015-11-21 | Zpower Llc | Novel electrodes and rechargeable batteries |
US8557727B2 (en) | 2009-12-15 | 2013-10-15 | SDCmaterials, Inc. | Method of forming a catalyst with inhibited mobility of nano-active material |
US9149797B2 (en) | 2009-12-15 | 2015-10-06 | SDCmaterials, Inc. | Catalyst production method and system |
US9126191B2 (en) | 2009-12-15 | 2015-09-08 | SDCmaterials, Inc. | Advanced catalysts for automotive applications |
US8652992B2 (en) | 2009-12-15 | 2014-02-18 | SDCmaterials, Inc. | Pinning and affixing nano-active material |
US8545652B1 (en) | 2009-12-15 | 2013-10-01 | SDCmaterials, Inc. | Impact resistant material |
US8470112B1 (en) | 2009-12-15 | 2013-06-25 | SDCmaterials, Inc. | Workflow for novel composite materials |
US8803025B2 (en) | 2009-12-15 | 2014-08-12 | SDCmaterials, Inc. | Non-plugging D.C. plasma gun |
US9119309B1 (en) | 2009-12-15 | 2015-08-25 | SDCmaterials, Inc. | In situ oxide removal, dispersal and drying |
JP6016637B2 (en) | 2009-12-16 | 2016-10-26 | アプリコット マテリアルズ テクノロジーズ,エル.エル.シー. | Capacitor including a three-dimensional electrode having a large surface area and manufacturing method |
US20110165345A1 (en) * | 2010-01-07 | 2011-07-07 | Toyota Motor Engineering & Manufacturing North America, Inc. | Process to make structured particles |
CA2826551A1 (en) | 2010-02-04 | 2011-08-11 | Third Millennium Metals, Llc | Metal-carbon compositions |
US9539643B2 (en) * | 2010-02-12 | 2017-01-10 | GM Global Technology Operations LLC | Making metal and bimetal nanostructures with controlled morphology |
US8535971B2 (en) * | 2010-02-12 | 2013-09-17 | Heraeus Precious Metals North America Conshohocken Llc | Method for applying full back surface field and silver busbar to solar cell |
JP5447642B2 (en) * | 2010-02-22 | 2014-03-19 | 株式会社村田製作所 | Thermoelectric conversion material and method for producing thermoelectric conversion material |
US8080495B2 (en) | 2010-04-01 | 2011-12-20 | Cabot Corporation | Diesel oxidation catalysts |
JP5075222B2 (en) | 2010-05-11 | 2012-11-21 | Tdk株式会社 | Electronic component and manufacturing method thereof |
US8431869B2 (en) | 2010-06-02 | 2013-04-30 | GM Global Technology Operations LLC | Defrosting, defogging and de-icing structures |
US20120006808A1 (en) * | 2010-06-18 | 2012-01-12 | Young David A | Thermal Countermeasures Technology Electro-Resistive Heating Materials and Composites |
US9719174B2 (en) * | 2010-06-28 | 2017-08-01 | United Technologies Corporation | Article having composite coating |
US9005432B2 (en) | 2010-06-29 | 2015-04-14 | Saudi Arabian Oil Company | Removal of sulfur compounds from petroleum stream |
CA2829242A1 (en) | 2010-08-07 | 2012-02-16 | Arjun Daniel Srinivas | Device components with surface-embedded additives and related manufacturing methods |
US9572880B2 (en) | 2010-08-27 | 2017-02-21 | Sienna Biopharmaceuticals, Inc. | Ultrasound delivery of nanoparticles |
JP5945540B2 (en) | 2010-08-27 | 2016-07-05 | シエナ バイオファーマシューティカルズ,インク. | Compositions and methods for targeted thermal modulation |
JP2013541815A (en) | 2010-09-24 | 2013-11-14 | ゼットパワー, エルエルシー | Cathode |
JP2013545291A (en) | 2010-10-12 | 2013-12-19 | アプリコット マテリアルズ テクノロジーズ,エル.エル.シー. | Ceramic capacitor and manufacturing method |
FI20106088A0 (en) * | 2010-10-21 | 2010-10-21 | Beneq Oy | Surface treatment device and method |
EP2444148A1 (en) * | 2010-10-25 | 2012-04-25 | Bayer Material Science AG | Metal particle sol with endowed silver nano particles |
WO2012061449A1 (en) | 2010-11-03 | 2012-05-10 | Zpower, Llc | Novel electrodes and rechargeable batteries |
CN103221850B (en) * | 2010-11-22 | 2015-05-13 | 富士胶片株式会社 | Heat ray shielding material |
GB2486190A (en) * | 2010-12-06 | 2012-06-13 | P V Nano Cell Ltd | Concentrated dispersion of nanometric silver particles |
US8535518B2 (en) | 2011-01-19 | 2013-09-17 | Saudi Arabian Oil Company | Petroleum upgrading and desulfurizing process |
US8669202B2 (en) | 2011-02-23 | 2014-03-11 | SDCmaterials, Inc. | Wet chemical and plasma methods of forming stable PtPd catalysts |
MX2013010080A (en) | 2011-03-04 | 2014-04-16 | Third Millennium Metals Llc | Aluminum-carbon compositions. |
JP2012209148A (en) * | 2011-03-30 | 2012-10-25 | Sony Corp | Conductive particle, conductive paste, and circuit board |
US20130004659A1 (en) | 2011-06-30 | 2013-01-03 | E I Du Pont De Nemours And Company | Thick film paste and use thereof |
US9783874B2 (en) | 2011-06-30 | 2017-10-10 | E I Du Pont De Nemours And Company | Thick film paste and use thereof |
KR20140071364A (en) | 2011-08-19 | 2014-06-11 | 에스디씨머티리얼스, 인코포레이티드 | Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions |
CN104040642B (en) * | 2011-08-24 | 2016-11-16 | 宸鸿科技控股有限公司 | Patterned transparent conductor and related manufacturing processes |
US8844103B2 (en) * | 2011-09-01 | 2014-09-30 | Medtronic, Inc. | Methods for making feedthrough assemblies including a capacitive filter array |
TWI525184B (en) | 2011-12-16 | 2016-03-11 | 拜歐菲樂Ip有限責任公司 | Cryogenic injection compositions, systems and methods for cryogenically modulating flow in a conduit |
KR101353149B1 (en) * | 2011-12-27 | 2014-01-27 | 삼성전기주식회사 | Manufacturing mehtod for copper powder |
KR20140023543A (en) * | 2012-08-16 | 2014-02-27 | 삼성전기주식회사 | Nickel powder for internal electrode and manufacturing method thereof, multi-layered ceramic electronic parts including the same |
KR101434024B1 (en) * | 2012-08-17 | 2014-08-25 | 삼성전기주식회사 | Metal powder, electronic device and method of producing the same |
US9005522B2 (en) | 2012-08-30 | 2015-04-14 | Jostens, Inc. | Silver alloy |
US9799886B2 (en) | 2012-09-27 | 2017-10-24 | Zpower, Llc | Cathode with silver material and silicate dopant and method of producing |
DK2906286T3 (en) | 2012-10-11 | 2017-07-17 | Nanocomposix Inc | SILVER CHARACTER COMPOSITIONS AND PROCEDURES |
CN105188719A (en) * | 2012-10-26 | 2015-12-23 | 纳诺康波西克斯公司 | Metastable silver nanoparticle composites |
US9156025B2 (en) | 2012-11-21 | 2015-10-13 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
US9511352B2 (en) | 2012-11-21 | 2016-12-06 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
CN104684666B (en) * | 2012-11-26 | 2017-07-04 | 三井金属矿业株式会社 | Copper powder and its manufacture method |
US20140287158A1 (en) * | 2013-03-21 | 2014-09-25 | Intrinsiq Materials, Inc. | Performance of conductive copper paste using copper flake |
KR101514512B1 (en) * | 2013-04-08 | 2015-04-22 | 삼성전기주식회사 | A multilayer ceramic capacitor and a method for manufactuaring the same |
US9799421B2 (en) * | 2013-06-07 | 2017-10-24 | Heraeus Precious Metals North America Conshohocken Llc | Thick print copper pastes for aluminum nitride substrates |
TWM512217U (en) | 2013-06-20 | 2015-11-11 | Plant PV | Solar cells |
US9892816B2 (en) * | 2013-06-27 | 2018-02-13 | Heraeus Precious Metals North America Conshohocken Llc | Platinum containing conductive paste |
KR102248526B1 (en) * | 2013-07-23 | 2021-05-06 | 삼성전기주식회사 | Nickel powder for internal electrode, multi-layered ceramic capacitor and circuit board for mounting the same |
US9586179B2 (en) | 2013-07-25 | 2017-03-07 | SDCmaterials, Inc. | Washcoats and coated substrates for catalytic converters and methods of making and using same |
SG10201801481SA (en) | 2013-08-29 | 2018-04-27 | Alpha Assembly Solutions Inc | Composite and multilayered silver films for joining electrical and mechanical components |
US9331216B2 (en) | 2013-09-23 | 2016-05-03 | PLANT PV, Inc. | Core-shell nickel alloy composite particle metallization layers for silicon solar cells |
JP2016535664A (en) | 2013-10-22 | 2016-11-17 | エスディーシーマテリアルズ, インコーポレイテッド | Lean NOx trap composition |
MX2016004991A (en) | 2013-10-22 | 2016-08-01 | Sdcmaterials Inc | Catalyst design for heavy-duty diesel combustion engines. |
US9578771B2 (en) * | 2014-03-18 | 2017-02-21 | Labinal, Llc | Backplane module and method of manufacturing same |
CN106470752A (en) | 2014-03-21 | 2017-03-01 | Sdc材料公司 | For passive NOXThe compositionss of absorption (PNA) system |
US9388477B1 (en) * | 2015-01-20 | 2016-07-12 | Uchicago Argonne, Llc | Noble metal superparticles and methods of preparation thereof |
JP6256616B2 (en) * | 2015-04-22 | 2018-01-10 | 日立金属株式会社 | Metal particles and production method thereof, coated metal particles, metal powder |
US10550291B2 (en) | 2015-08-25 | 2020-02-04 | Hitachi Chemical Co., Ltd. | Core-shell, oxidation-resistant, electrically conducting particles for low temperature conductive applications |
WO2017035102A1 (en) | 2015-08-26 | 2017-03-02 | Plant Pv, Inc | Silver-bismuth non-contact metallization pastes for silicon solar cells |
EP3153253B1 (en) | 2015-10-05 | 2021-01-13 | Ansaldo Energia IP UK Limited | Method for treatment of metallic powder for selective laser melting |
US10233338B2 (en) | 2015-11-24 | 2019-03-19 | PLANT PV, Inc. | Fired multilayer stacks for use in integrated circuits and solar cells |
EP3290399B1 (en) * | 2016-08-29 | 2022-03-02 | Infineon Technologies AG | Method for producing a metal-ceramic substrate with a least one via |
US10777359B2 (en) | 2017-01-25 | 2020-09-15 | Holy Stone Enterprise Co., Ltd. | Multilayer ceramic capacitor |
TWI665691B (en) * | 2017-01-25 | 2019-07-11 | 禾伸堂企業股份有限公司 | Multilayer ceramic capacitor and its manufacturing method |
US10752847B2 (en) | 2017-03-08 | 2020-08-25 | Saudi Arabian Oil Company | Integrated hydrothermal process to upgrade heavy oil |
US10703999B2 (en) | 2017-03-14 | 2020-07-07 | Saudi Arabian Oil Company | Integrated supercritical water and steam cracking process |
US11185920B2 (en) | 2018-01-12 | 2021-11-30 | Hammond Group, Inc. | Methods and systems for making metal-containing particles |
CN111771090A (en) * | 2018-02-26 | 2020-10-13 | 国立大学法人东海国立大学机构 | Heat exchanger, refrigerator, and sintered body |
KR102442835B1 (en) * | 2018-03-28 | 2022-09-14 | 삼성전기주식회사 | Multilayer capacitor |
KR102439906B1 (en) * | 2018-03-29 | 2022-09-05 | 삼성전기주식회사 | Multilayer capacitor |
JP7089402B2 (en) * | 2018-05-18 | 2022-06-22 | 太陽誘電株式会社 | Multilayer ceramic capacitors and their manufacturing methods |
JP7145652B2 (en) * | 2018-06-01 | 2022-10-03 | 太陽誘電株式会社 | Multilayer ceramic capacitor and manufacturing method thereof |
US11167375B2 (en) | 2018-08-10 | 2021-11-09 | The Research Foundation For The State University Of New York | Additive manufacturing processes and additively manufactured products |
KR102217288B1 (en) | 2018-08-16 | 2021-02-19 | 삼성전기주식회사 | Multi-layered ceramic electronic component and method for manufacturing the same |
US10526552B1 (en) | 2018-10-12 | 2020-01-07 | Saudi Arabian Oil Company | Upgrading of heavy oil for steam cracking process |
WO2020095796A1 (en) * | 2018-11-07 | 2020-05-14 | 日本化学工業株式会社 | Coated particle, electrically conductive material comprising same, and method of manufacturing coated particle |
US11148159B2 (en) | 2019-06-27 | 2021-10-19 | Haier Us Appliance Solutions, Inc. | Laundry center having a retractable dispensing assembly |
CN110695373B (en) * | 2019-10-14 | 2022-05-10 | 天津大学 | Preparation method of graphene-coated rare earth element-loaded copper composite material with double-layer harmonic structure |
US11282815B2 (en) | 2020-01-14 | 2022-03-22 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
JP7481731B2 (en) | 2020-01-18 | 2024-05-13 | ナノミストテクノロジーズ株式会社 | Ultrasonic atomizer |
CN113523267A (en) * | 2020-04-21 | 2021-10-22 | 香港大学 | Novel antibacterial composite powder, stainless steel, preparation method and application thereof |
US11380669B2 (en) * | 2020-06-18 | 2022-07-05 | Micron Technology, Inc. | Methods of forming microelectronic devices |
US11699652B2 (en) | 2020-06-18 | 2023-07-11 | Micron Technology, Inc. | Microelectronic devices and electronic systems |
US11335602B2 (en) | 2020-06-18 | 2022-05-17 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
US11557569B2 (en) | 2020-06-18 | 2023-01-17 | Micron Technology, Inc. | Microelectronic devices including source structures overlying stack structures, and related electronic systems |
US11705367B2 (en) | 2020-06-18 | 2023-07-18 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, electronic systems, and additional methods |
US11563018B2 (en) | 2020-06-18 | 2023-01-24 | Micron Technology, Inc. | Microelectronic devices, and related methods, memory devices, and electronic systems |
US11825658B2 (en) | 2020-08-24 | 2023-11-21 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices |
US11417676B2 (en) | 2020-08-24 | 2022-08-16 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices, and related microelectronic devices, memory devices, and electronic systems |
CN112760512A (en) * | 2020-12-25 | 2021-05-07 | 湖南艾迪奥电子科技有限公司 | Preparation method of conductive ceramic powder for electronic element |
CN114752234A (en) * | 2021-01-08 | 2022-07-15 | 杭州三花研究院有限公司 | Composite material and preparation method thereof, heat exchanger and heat management system |
US11751408B2 (en) | 2021-02-02 | 2023-09-05 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems |
RU2768644C1 (en) * | 2021-03-16 | 2022-03-24 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кубанский государственный технологический университет" (ФГБОУ ВО "КубГТУ") | Powder magnetic material cladding device |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3415640A (en) * | 1966-10-28 | 1968-12-10 | Fansteel Metallurgical Corp | Process for making dispersions of particulate oxides in metals |
US3510291A (en) * | 1966-11-10 | 1970-05-05 | Westinghouse Electric Corp | Vapor phase conversion of molybdenum or tungsten compound to form the oxide or metal |
US3617358A (en) * | 1967-09-29 | 1971-11-02 | Metco Inc | Flame spray powder and process |
US3846345A (en) * | 1969-10-06 | 1974-11-05 | Owens Illinois Inc | Electroconductive paste composition and structures formed therefrom |
US4130671A (en) * | 1977-09-30 | 1978-12-19 | The United States Of America As Represented By The United States Department Of Energy | Method for preparing a thick film conductor |
US4799622A (en) * | 1986-08-05 | 1989-01-24 | Tao Nenryo Kogyo Kabushiki Kaisha | Ultrasonic atomizing apparatus |
US5495386A (en) * | 1993-08-03 | 1996-02-27 | Avx Corporation | Electrical components, such as capacitors, and methods for their manufacture |
Family Cites Families (316)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2398301A (en) | 1943-07-26 | 1946-04-09 | Dow Chemical Co | Removal of highly unsaturated hydrocarbon impurities from diolefin-containing mixtures |
US2785964A (en) * | 1953-08-17 | 1957-03-19 | Phillips Petroleum Co | Process, apparatus, and system for producing, agglomerating, and collecting carbon black |
NL6507771A (en) | 1964-06-17 | 1965-12-20 | ||
US3401020A (en) | 1964-11-25 | 1968-09-10 | Phillips Petroleum Co | Process and apparatus for the production of carbon black |
US3313362A (en) * | 1965-02-03 | 1967-04-11 | Air Drilling Specialties Co | Method of and composition for use in, gas drilling |
US3785801A (en) | 1968-03-01 | 1974-01-15 | Int Nickel Co | Consolidated composite materials by powder metallurgy |
NL7006818A (en) | 1969-05-19 | 1970-11-23 | ||
US3683382A (en) | 1969-05-29 | 1972-08-08 | Honeywell Inc | Recording medium responsive to force fields and apparatus for recording and reproducing signals on the medium |
USRE28972E (en) | 1969-07-10 | 1976-09-21 | Boehringer Ingelheim Gmbh | 5-Aryl-1H-1,5-benzodiazepine-2,4-diones |
US3620713A (en) * | 1970-02-26 | 1971-11-16 | Du Pont | Process of preparing noble metal powders |
US3620714A (en) * | 1970-02-26 | 1971-11-16 | Du Pont | Process of preparing noble metal alloy powders |
NL7117454A (en) | 1970-12-24 | 1972-06-27 | ||
GB1367281A (en) * | 1971-01-19 | 1974-09-18 | Sony Corp | Speed detecting devices |
US3922388A (en) | 1971-03-02 | 1975-11-25 | Honeywell Inc | Method of making an encapsulated thick film resistor and associated encapsulated conductors for use in an electrical circuit |
US3768994A (en) | 1971-03-15 | 1973-10-30 | Owens Illinois Inc | Gold powder |
GB1381666A (en) | 1971-04-02 | 1975-01-22 | Univ Australian | Compositions containing copper salts their methods of production and the recovery and purification of copper |
US3816097A (en) | 1971-05-06 | 1974-06-11 | Owens Illinois Inc | Powders of metal, silver and gold |
US3717481A (en) | 1971-05-13 | 1973-02-20 | Du Pont | Gold metallizing compositions |
US4044193A (en) | 1971-06-16 | 1977-08-23 | Prototech Company | Finely particulated colloidal platinum compound and sol for producing the same, and method of preparation of fuel cell electrodes and the like employing the same |
US3725035A (en) | 1971-07-02 | 1973-04-03 | Du Pont | Process for making gold powder |
US3882050A (en) * | 1971-12-23 | 1975-05-06 | Ethyl Corp | Method of depositing a noble metal on a surface of a nickel support |
US3830435A (en) * | 1972-06-12 | 1974-08-20 | Int Nickel Co | Production of ceramic-metal composite powders and articles thereof |
US3814696A (en) | 1972-06-19 | 1974-06-04 | Eastman Kodak Co | Colloidal metal in non-aqueous media |
AU5910773A (en) | 1972-08-23 | 1975-02-13 | Uncle Ben S Australia Pty | Treatment of meat products |
IT967833B (en) | 1972-09-25 | 1974-03-11 | Montedison Spa | PROCEDURE FOR PREPARING SUBMICHRONIC NICKEL POWDERS WITH SPHEROIDAL SHAPES |
DE2310062A1 (en) | 1973-02-28 | 1974-08-29 | Siemens Ag | THICK-FILM CONNECTION ON CERAMIC SUBSTRATE WITH THROUGH CONTACTS BETWEEN THE CONDUCTORS ON BOTH SIDES OF THE SUBSTRATE |
DE2329352C2 (en) | 1973-06-08 | 1982-05-19 | Demetron Gesellschaft für Elektronik-Werkstoffe mbH, 6540 Hanau | Process for the production of gold powder |
US4096316A (en) | 1973-08-18 | 1978-06-20 | Fuji Photo Film Co., Ltd. | Method of producing magnetic material with alkaline borohydrides |
US3902102A (en) | 1974-04-01 | 1975-08-26 | Sprague Electric Co | Ceramic capacitor with base metal electrodes |
GB1461176A (en) * | 1974-04-11 | 1977-01-13 | Plessey Inc | Method of producing powdered materials |
US3881914A (en) * | 1974-04-26 | 1975-05-06 | Owens Illinois Inc | Preparation of electronic grade copper |
US3966463A (en) | 1974-08-12 | 1976-06-29 | Plessey Incorporated | Oxidation and sinter-resistant metal powders and pastes |
US4218507A (en) * | 1975-01-13 | 1980-08-19 | Graham Magnetics, Inc. | Coated particles and process of preparing same |
US4036634A (en) | 1975-04-07 | 1977-07-19 | Plessey, Incorporated | Oxidation and sinter-resistant metal powders |
US4010025A (en) * | 1975-04-07 | 1977-03-01 | Plessey Incorporated | Oxidation and sinter-resistant metal powders and pastes |
US4122232A (en) | 1975-04-21 | 1978-10-24 | Engelhard Minerals & Chemicals Corporation | Air firable base metal conductors |
US4019188A (en) * | 1975-05-12 | 1977-04-19 | International Business Machines Corporation | Micromist jet printer |
US4094853A (en) | 1975-05-15 | 1978-06-13 | Kenrich Petrochemicals, Inc. | Alkoxy titanate salts useful as coupling agents |
US3988651A (en) | 1975-05-23 | 1976-10-26 | Erie Technological Products, Inc. | Monolithic ceramic capacitor |
GB1558762A (en) | 1975-07-04 | 1980-01-09 | Johnson Matthey Co Ltd | Metal or alloy coated powders |
US4072771A (en) | 1975-11-28 | 1978-02-07 | Bala Electronics Corporation | Copper thick film conductor |
US4223085A (en) * | 1976-04-05 | 1980-09-16 | Xerox Corporation | Semi-conductive nickel carrier particles |
US4089676A (en) | 1976-05-24 | 1978-05-16 | Williams Gold Refining Company Incorporated | Method for producing nickel metal powder |
JPS5324600A (en) | 1976-08-19 | 1978-03-07 | Murata Manufacturing Co | Nonnreducing dielectric ceramic composition |
JPS5332015A (en) | 1976-09-07 | 1978-03-25 | Fuji Photo Film Co Ltd | Thermodevelopable photosensitive material |
US4146957A (en) | 1977-01-17 | 1979-04-03 | Engelhard Minerals & Chemicals Corporation | Thick film resistance thermometer |
US4105483A (en) | 1977-02-14 | 1978-08-08 | Globe Industries Corporation | Printing ink transfer process |
US4211668A (en) | 1977-03-07 | 1980-07-08 | Thalatta, Inc. | Process of microencapsulation and products thereof |
US4289534A (en) | 1977-05-03 | 1981-09-15 | Graham Magnetics, Inc. | Metal powder paint composition |
US4186244A (en) * | 1977-05-03 | 1980-01-29 | Graham Magnetics Inc. | Novel silver powder composition |
US4140817A (en) | 1977-11-04 | 1979-02-20 | Bell Telephone Laboratories, Incorporated | Thick film resistor circuits |
US4136059A (en) | 1977-12-12 | 1979-01-23 | United Technologies Corporation | Method for producing highly dispersed catalytic platinum |
FR2429264A1 (en) * | 1978-06-20 | 1980-01-18 | Louyot Comptoir Lyon Alemand | PROCESS FOR THE MANUFACTURE OF A PLATINOID COMPRISING A DISPERSE PHASE OF A REFRACTORY OXIDE |
US4223369A (en) | 1978-07-03 | 1980-09-16 | Sprague Electric Company | Monolithic capacitor with low firing zirconate and nickel electrodes |
DE2851729C2 (en) | 1978-11-30 | 1980-06-04 | W.C. Heraeus Gmbh, 6450 Hanau | Blend gold, process for veneering cast or sintered metallic dentures or dental prosthesis parts and application of the blend gold |
US4266229A (en) * | 1979-03-26 | 1981-05-05 | Whittaker Corporation | Light sensitive jet inks |
US4255291A (en) * | 1979-06-21 | 1981-03-10 | E. I. Du Pont De Nemours And Company | Air-fireable conductor composition |
DE2929630C2 (en) | 1979-07-21 | 1983-12-15 | Dornier System Gmbh, 7990 Friedrichshafen | Process for the production of silver powder |
US4333966A (en) | 1979-07-30 | 1982-06-08 | Graham Magnetics, Inc. | Method of forming a conductive metal pattern |
US4463030A (en) | 1979-07-30 | 1984-07-31 | Graham Magnetics Incorporated | Process for forming novel silver powder composition |
US4419383A (en) | 1979-12-26 | 1983-12-06 | Magnavox Government And Industrial Electronics Company | Method for individually encapsulating magnetic particles |
US4407674A (en) | 1980-03-03 | 1983-10-04 | Ercon, Inc. | Novel electroconductive compositions and powder for use therein |
US4402458A (en) * | 1980-04-12 | 1983-09-06 | Battelle-Institut E.V. | Apparatus for atomizing liquids |
US4396899A (en) | 1980-04-16 | 1983-08-02 | Kabushiki Kaisha Kirk | Platinum thin film resistance element and production method therefor |
US4450188A (en) * | 1980-04-18 | 1984-05-22 | Shinroku Kawasumi | Process for the preparation of precious metal-coated particles |
JPS5922385B2 (en) * | 1980-04-25 | 1984-05-26 | 日産自動車株式会社 | Conductive paste for filling through holes in ceramic substrates |
DE3023297C2 (en) | 1980-06-21 | 1988-05-05 | International Minerals & Chemical Luxembourg S.A., 2010 Luxembourg | Process for the production of a preliminary product for the production of silicon carbide |
JPS597765B2 (en) | 1980-09-13 | 1984-02-21 | 昭宣 吉澤 | Manufacturing method of fine powder metal |
US4487811A (en) | 1980-12-29 | 1984-12-11 | General Electric Company | Electrical conductor |
JPS57185316A (en) * | 1981-05-11 | 1982-11-15 | Sumitomo Metal Mining Co Ltd | Electrically conductive resin paste |
US4370308A (en) * | 1981-05-15 | 1983-01-25 | Cabot Corporation | Production of carbon black |
US4381945A (en) * | 1981-08-03 | 1983-05-03 | E. I. Du Pont De Nemours And Company | Thick film conductor compositions |
US4416932A (en) | 1981-08-03 | 1983-11-22 | E. I. Du Pont De Nemours And Company | Thick film conductor compositions |
JPS5837160A (en) * | 1981-08-27 | 1983-03-04 | Mitsubishi Metal Corp | Cast alloy for guide shoe of inclined hot rolling mill for manufacturing seamless steel pipe |
JPS5852900A (en) * | 1981-09-24 | 1983-03-29 | 株式会社日立製作所 | Method of producing ceramic multilayer circuit board |
US4418099A (en) | 1982-02-05 | 1983-11-29 | Engelhard Corporation | Non-burnished precious metal composition |
JPS58151450A (en) * | 1982-02-27 | 1983-09-08 | Kyowa Chuzosho:Kk | Composite alloy cast iron |
US4508753A (en) * | 1982-08-19 | 1985-04-02 | Gte Automatic Electric Inc. | Method of producing fine line conductive/resistive patterns on an insulating coating |
US4477296A (en) | 1982-09-30 | 1984-10-16 | E. I. Du Pont De Nemours And Company | Method for activating metal particles |
JPS59103301A (en) * | 1982-12-03 | 1984-06-14 | 株式会社明電舎 | Temperature sensitive resistance element |
FR2537898A1 (en) | 1982-12-21 | 1984-06-22 | Univ Paris | METHOD FOR REDUCING METAL COMPOUNDS BY THE POLYOLS, AND METAL POWDERS OBTAINED BY THIS PROCESS |
US4613371A (en) * | 1983-01-24 | 1986-09-23 | Gte Products Corporation | Method for making ultrafine metal powder |
US4517252A (en) * | 1983-05-06 | 1985-05-14 | The Boeing Company | Pre-alloyed thick film conductor for use with aluminum wire bonding and method of bonding |
US4500368A (en) * | 1983-05-12 | 1985-02-19 | Sprague Electric Company | Ag/Pd electroding powder and method for making |
US4775439A (en) | 1983-07-25 | 1988-10-04 | Amoco Corporation | Method of making high metal content circuit patterns on plastic boards |
JPS6060170A (en) | 1983-09-12 | 1985-04-06 | Canon Inc | Recording fluid |
GB8326235D0 (en) * | 1983-09-30 | 1983-11-02 | Sherritt Gordon Mines Ltd | Production of fine spherical copper powder |
WO1985003460A1 (en) * | 1984-02-13 | 1985-08-15 | Schmitt Jerome J Iii | Method and apparatus for the gas jet deposition of conducting and dielectric thin solid films and products produced thereby |
JPS60195077A (en) | 1984-03-16 | 1985-10-03 | 奥野製薬工業株式会社 | Catalyst composition for ceramic electroless plating |
US4578114A (en) | 1984-04-05 | 1986-03-25 | Metco Inc. | Aluminum and yttrium oxide coated thermal spray powder |
US5049434A (en) | 1984-04-30 | 1991-09-17 | National Starch And Chemical Investment Holding Corporation | Pre-patterned device substrate device-attach adhesive transfer system |
US4548879A (en) | 1984-05-21 | 1985-10-22 | Rohm And Haas Company | Solderable polymer thick films |
US4600604A (en) * | 1984-09-17 | 1986-07-15 | E. I. Du Pont De Nemours And Company | Metal oxide-coated copper powder |
DE3571545D1 (en) | 1984-09-19 | 1989-08-17 | Bayer Ag | Method of partially activating a substrate surfaces |
US4599277A (en) | 1984-10-09 | 1986-07-08 | International Business Machines Corp. | Control of the sintering of powdered metals |
JPS6193828A (en) * | 1984-10-16 | 1986-05-12 | Natl Res Inst For Metals | Preparation of ultra-fine particle mixture |
US4668533A (en) | 1985-05-10 | 1987-05-26 | E. I. Du Pont De Nemours And Company | Ink jet printing of printed circuit boards |
JPS622404A (en) | 1985-06-26 | 1987-01-08 | 昭栄化学工業株式会社 | Thick film paste |
US4720418A (en) * | 1985-07-01 | 1988-01-19 | Cts Corporation | Pre-reacted resistor paint, and resistors made therefrom |
US4612048A (en) | 1985-07-15 | 1986-09-16 | E. I. Du Pont De Nemours And Company | Dimensionally stable powder metal compositions |
US4818614A (en) * | 1985-07-29 | 1989-04-04 | Shiseido Company Ltd. | Modified powder |
US4650108A (en) * | 1985-08-15 | 1987-03-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for forming hermetic seals |
JPH0623405B2 (en) | 1985-09-17 | 1994-03-30 | 川崎製鉄株式会社 | Method for producing spherical copper fine powder |
DE3540255A1 (en) | 1985-11-13 | 1987-07-23 | Mtu Muenchen Gmbh | METHOD FOR PRODUCING A DISPERSION-HARDENED METAL ALLOY |
DE3786943T2 (en) | 1986-03-07 | 1994-03-17 | Nagakazu Furuya | Gas permeable electrode. |
JPS62225573A (en) * | 1986-03-28 | 1987-10-03 | Fukuda Metal Foil & Powder Co Ltd | Copper powder for electrically conductive paste |
US4859241A (en) | 1986-04-16 | 1989-08-22 | Johnson Matthey Inc. | Metal flake and use thereof |
US4877647A (en) | 1986-04-17 | 1989-10-31 | Kansas State University Research Foundation | Method of coating substrates with solvated clusters of metal particles |
US5039552A (en) | 1986-05-08 | 1991-08-13 | The Boeing Company | Method of making thick film gold conductor |
US4687511A (en) * | 1986-05-15 | 1987-08-18 | Gte Products Corporation | Metal matrix composite powders and process for producing same |
DE3622123A1 (en) * | 1986-07-02 | 1988-01-21 | Dornier System Gmbh | METHOD AND DEVICE FOR PRODUCING COMPOSITE POWDERS |
JPH0797696B2 (en) * | 1986-07-05 | 1995-10-18 | 株式会社豊田自動織機製作所 | Hybrid IC substrate and circuit pattern forming method |
JPS6331522A (en) | 1986-07-25 | 1988-02-10 | Kao Corp | Moisture absorbent |
US4808274A (en) * | 1986-09-10 | 1989-02-28 | Engelhard Corporation | Metallized substrates and process for producing |
US4670047A (en) | 1986-09-12 | 1987-06-02 | Gte Products Corporation | Process for producing finely divided spherical metal powders |
US4721524A (en) * | 1986-09-19 | 1988-01-26 | Pdp Alloys, Inc. | Non-pyrophoric submicron alloy powders of Group VIII metals |
US4731110A (en) * | 1987-03-16 | 1988-03-15 | Gte Products Corp. | Hydrometallurigcal process for producing finely divided spherical precious metal based powders |
FR2613372B1 (en) * | 1987-04-03 | 1989-06-09 | Rhone Poulenc Chimie | COMPACT POLYMER / METAL COMPOSITE PARTICLES, AQUEOUS DISPERSIONS THEREOF, PREPARATION METHOD THEREOF AND APPLICATION TO BIOLOGY |
US5338330A (en) | 1987-05-22 | 1994-08-16 | Exxon Research & Engineering Company | Multiphase composite particle containing a distribution of nonmetallic compound particles |
US4778517A (en) * | 1987-05-27 | 1988-10-18 | Gte Products Corporation | Hydrometallurgical process for producing finely divided copper and copper alloy powders |
US4879104A (en) | 1987-06-16 | 1989-11-07 | Cabot Corporation | Process for producing carbon black |
US4948623A (en) | 1987-06-30 | 1990-08-14 | International Business Machines Corporation | Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex |
US5147484A (en) | 1987-10-19 | 1992-09-15 | International Business Machines Corporation | Method for producing multi-layer ceramic substrates with oxidation resistant metalization |
US4931323A (en) | 1987-12-10 | 1990-06-05 | Texas Instruments Incorporated | Thick film copper conductor patterning by laser |
US4857241A (en) | 1987-12-10 | 1989-08-15 | Colgate-Palmolive Company | Apparatus for making post-foaming gels and method |
DE3802811A1 (en) * | 1988-01-30 | 1989-08-10 | Starck Hermann C Fa | AGGLOMERED METAL COMPOSITE POWDER, METHOD FOR THE PRODUCTION AND USE THEREOF |
DE3809331C1 (en) * | 1988-03-19 | 1989-04-27 | Degussa Ag, 6000 Frankfurt, De | |
US4892579A (en) * | 1988-04-21 | 1990-01-09 | The Dow Chemical Company | Process for preparing an amorphous alloy body from mixed crystalline elemental metal powders |
US4802933A (en) * | 1988-04-21 | 1989-02-07 | Allied-Signal Inc. | Nickel-palladium based brazing alloys |
DE3843412A1 (en) | 1988-04-22 | 1990-06-28 | Bayer Ag | NEW POLYTHIOPHENES, METHOD FOR THEIR PRODUCTION AND THEIR USE |
US4857233A (en) * | 1988-05-26 | 1989-08-15 | Potters Industries, Inc. | Nickel particle plating system |
US5132248A (en) | 1988-05-31 | 1992-07-21 | The United States Of America As Represented By The United States Department Of Energy | Direct write with microelectronic circuit fabrication |
US5045141A (en) | 1988-07-01 | 1991-09-03 | Amoco Corporation | Method of making solderable printed circuits formed without plating |
EP0363552B1 (en) | 1988-07-27 | 1993-10-13 | Tanaka Kikinzoku Kogyo K.K. | Process for preparing metal particles |
US4877451A (en) | 1988-08-17 | 1989-10-31 | Xerox Corporation | Ink jet inks containing colored silica particles |
US5882802A (en) * | 1988-08-29 | 1999-03-16 | Ostolski; Marian J. | Noble metal coated, seeded bimetallic non-noble metal powders |
US5121127A (en) | 1988-09-30 | 1992-06-09 | Sony Corporation | Microstrip antenna |
US4913731A (en) | 1988-10-03 | 1990-04-03 | Gte Products Corporation | Process of making prealloyed tungsten alloy powders |
US4892798A (en) * | 1988-12-13 | 1990-01-09 | Minnesota Mining And Manufacturing Company | Electrophoretic imaging metal-toner fluid dispersion |
EP0406376A1 (en) | 1988-12-24 | 1991-01-09 | Technology Applications Company Limited | Improved method for making printed circuits |
JP2538043B2 (en) | 1989-04-05 | 1996-09-25 | 松下電器産業株式会社 | Pattern forming material and method of manufacturing pattern forming substrate using the same |
FI83935C (en) * | 1989-05-24 | 1991-09-25 | Outokumpu Oy | Ways to process and produce materials |
US5126915A (en) * | 1989-07-28 | 1992-06-30 | E. I. Du Pont De Nemours And Company | Metal oxide-coated electrically conductive powders and compositions thereof |
US4954926A (en) * | 1989-07-28 | 1990-09-04 | E. I. Du Pont De Nemours And Company | Thick film conductor composition |
US5395422A (en) * | 1989-08-22 | 1995-03-07 | Hydro-Quebec | Process of preparing nanocrystalline powders of an electroactive alloy |
US5028473A (en) | 1989-10-02 | 1991-07-02 | Hughes Aircraft Company | Three dimensional microcircuit structure and process for fabricating the same from ceramic tape |
US5424140A (en) * | 1989-10-10 | 1995-06-13 | Alliedsignal Inc. | Low melting nickel-palladium-silicon brazing alloys |
EP0435655B1 (en) | 1989-12-26 | 1998-02-25 | Sumitomo Metal Mining Company Limited | Silver-metal oxide composite material and process for producing the same |
US5057363A (en) | 1989-12-27 | 1991-10-15 | Japan Capsular Products Inc. | Magnetic display system |
US5716663A (en) * | 1990-02-09 | 1998-02-10 | Toranaga Technologies | Multilayer printed circuit |
US5183784A (en) * | 1990-02-21 | 1993-02-02 | Johnson Matthey Inc. | Silver-glass pastes |
US5075262A (en) | 1990-02-21 | 1991-12-24 | Johnson Matthey, Inc. | Silver-glass pastes |
US5587111A (en) | 1990-03-29 | 1996-12-24 | Vacuum Metallurgical Co., Ltd. | Metal paste, process for producing same and method of making a metallic thin film using the metal paste |
EP0452118B1 (en) | 1990-04-12 | 1996-08-21 | Matsushita Electric Industrial Co., Ltd. | Conductive ink composition and method of forming a conductive thick film pattern |
US5167869A (en) | 1990-04-12 | 1992-12-01 | E. I. Du Pont De Nemours And Company | Gold conductor composition for forming conductor patterns on ceramic based substrates |
US5059242A (en) | 1990-04-27 | 1991-10-22 | Firmstone Michael G | Seed layer compositions containing organogold and organosilver compounds |
US5122182A (en) * | 1990-05-02 | 1992-06-16 | The Perkin-Elmer Corporation | Composite thermal spray powder of metal and non-metal |
US5063021A (en) | 1990-05-23 | 1991-11-05 | Gte Products Corporation | Method for preparing powders of nickel alloy and molybdenum for thermal spray coatings |
US5399432A (en) * | 1990-06-08 | 1995-03-21 | Potters Industries, Inc. | Galvanically compatible conductive filler and methods of making same |
US5853451A (en) * | 1990-06-12 | 1998-12-29 | Kawasaki Steel Corporation | Ultrafine spherical nickel powder for use as an electrode of laminated ceramic capacitors |
US5091003A (en) * | 1990-06-15 | 1992-02-25 | Ford Motor Company | Ink compositions and method for placing indicia on glass |
US5073409A (en) | 1990-06-28 | 1991-12-17 | The United States Of America As Represented By The Secretary Of The Navy | Environmentally stable metal powders |
BR9102714A (en) | 1990-06-28 | 1992-02-04 | Sumitomo Metal Mining Co | COMPOSITE MATERIALS OF SILVER-OR ALLOY SILVER COPPER-METAL OXIDE AND PRODUCTION PROCESS OF THE SAME |
US5281261A (en) * | 1990-08-31 | 1994-01-25 | Xerox Corporation | Ink compositions containing modified pigment particles |
US5149516A (en) | 1990-10-15 | 1992-09-22 | Mobil Oil Corp. | Partial oxidation of methane over perovskite catalyst |
JP3056522B2 (en) | 1990-11-30 | 2000-06-26 | 三菱レイヨン株式会社 | Metal-conductive polymer composite fine particles and method for producing the same |
US5153023A (en) | 1990-12-03 | 1992-10-06 | Xerox Corporation | Process for catalysis of electroless metal plating on plastic |
DE4040446A1 (en) | 1990-12-18 | 1992-06-25 | Degussa | GOLD (I) MERCAPTOCARBONIC ACID ESTER, METHOD FOR THE PRODUCTION AND USE THEREOF |
CA2058075C (en) | 1990-12-26 | 1996-07-02 | Akira Yamakawa | Composite ceramic powder and production process thereof |
US5244538A (en) | 1991-07-26 | 1993-09-14 | Microelectronics And Computer Technology Corporation | Method of patterning metal on a substrate using direct-write deposition of a mask |
US5216207A (en) | 1991-02-27 | 1993-06-01 | David Sarnoff Research Center, Inc. | Low temperature co-fired multilayer ceramic circuit boards with silver conductors |
US5283104A (en) | 1991-03-20 | 1994-02-01 | International Business Machines Corporation | Via paste compositions and use thereof to form conductive vias in circuitized ceramic substrates |
US5288430A (en) | 1991-04-12 | 1994-02-22 | Nec Corporation | Conductive pastes |
US5329293A (en) | 1991-04-15 | 1994-07-12 | Trident | Methods and apparatus for preventing clogging in ink jet printers |
US5171734A (en) | 1991-04-22 | 1992-12-15 | Sri International | Coating a substrate in a fluidized bed maintained at a temperature below the vaporization temperature of the resulting coating composition |
US5176764A (en) * | 1991-05-08 | 1993-01-05 | The Goodyear Tire & Rubber Company | Tire assembly with inner and outer tires having cooperating vent components |
TW199884B (en) * | 1991-05-08 | 1993-02-11 | Sociere Des Produits Nestle S A | |
US5139818A (en) | 1991-06-06 | 1992-08-18 | General Motors Corporation | Method for applying metal catalyst patterns onto ceramic for electroless copper deposition |
US5539041A (en) | 1991-06-11 | 1996-07-23 | Fiberite, Inc. | Siloxane and phosphazene modified cyanate resin compositions |
US5139891A (en) * | 1991-07-01 | 1992-08-18 | Olin Corporation | Palladium alloys having utility in electrical applications |
JPH06511481A (en) * | 1991-07-05 | 1994-12-22 | ユニバーシティ オブ ロチェスター | Ultra-fine non-agglomerated porous particles that incorporate air bubbles |
US5176744A (en) * | 1991-08-09 | 1993-01-05 | Microelectronics Computer & Technology Corp. | Solution for direct copper writing |
US5173274A (en) * | 1991-08-16 | 1992-12-22 | Southwest Research Institute | Flash liquid aerosol production method and appartus |
US5250229A (en) * | 1991-10-10 | 1993-10-05 | E. I. Du Pont De Nemours And Company | Silver-rich conductor compositions for high thermal cycled and aged adhesion |
FR2682625B1 (en) | 1991-10-18 | 1997-04-11 | Degussa Prod Ceramiques | POWDERS OF METALS AND METAL ALLOYS IN THE FORM OF SPHERICAL AND COMPACT MICROCRYSTALLINE GRAINS, AND PROCESS AND DEVICE FOR MANUFACTURING POWDERS. |
JPH05125499A (en) * | 1991-11-01 | 1993-05-21 | Yoshida Kogyo Kk <Ykk> | Aluminum-base alloy having high strength and high toughness |
JP3350949B2 (en) | 1992-02-20 | 2002-11-25 | 株式会社村田製作所 | Conductive paste |
US5411792A (en) | 1992-02-27 | 1995-05-02 | Sumitomo Metal Mining Co., Ltd. | Transparent conductive substrate |
US5378508A (en) * | 1992-04-01 | 1995-01-03 | Akzo Nobel N.V. | Laser direct writing |
US5296189A (en) | 1992-04-28 | 1994-03-22 | International Business Machines Corporation | Method for producing metal powder with a uniform distribution of dispersants, method of uses thereof and structures fabricated therewith |
DE4214723C2 (en) * | 1992-05-04 | 1994-08-25 | Starck H C Gmbh Co Kg | Finely divided metal powder |
JP3253734B2 (en) * | 1992-06-19 | 2002-02-04 | 富士通株式会社 | Quartz equipment for semiconductor device manufacturing |
JPH0631166A (en) | 1992-07-06 | 1994-02-08 | Stonehard Assoc Inc | Production of catalyst carrying highly diffused finely powdered platinum |
US5270368A (en) | 1992-07-15 | 1993-12-14 | Videojet Systems International, Inc. | Etch-resistant jet ink and process |
US5428249A (en) * | 1992-07-15 | 1995-06-27 | Canon Kabushiki Kaisha | Photovoltaic device with improved collector electrode |
US5312674A (en) | 1992-07-31 | 1994-05-17 | Hughes Aircraft Company | Low-temperature-cofired-ceramic (LTCC) tape structures including cofired ferromagnetic elements, drop-in components and multi-layer transformer |
GB9217811D0 (en) | 1992-08-21 | 1992-10-07 | Graetzel Michael | Organic compounds |
TW256798B (en) * | 1992-10-05 | 1995-09-11 | Du Pont | |
TW261554B (en) | 1992-10-05 | 1995-11-01 | Du Pont | |
JP3042224B2 (en) | 1992-10-09 | 2000-05-15 | 昭栄化学工業株式会社 | Manufacturing method of multilayer ceramic capacitor |
US5332646A (en) | 1992-10-21 | 1994-07-26 | Minnesota Mining And Manufacturing Company | Method of making a colloidal palladium and/or platinum metal dispersion |
JP3064713B2 (en) | 1992-11-30 | 2000-07-12 | 昭栄化学工業株式会社 | Oxidation-resistant palladium powder, method for producing oxidation-resistant palladium powder, and thick-film conductive paste and multilayer ceramic capacitor using the same |
US5444453A (en) | 1993-02-02 | 1995-08-22 | Ball Corporation | Microstrip antenna structure having an air gap and method of constructing same |
US5433893A (en) | 1993-02-03 | 1995-07-18 | Chemet Corporation | Conductive compositions |
US5958361A (en) * | 1993-03-19 | 1999-09-28 | Regents Of The University Of Michigan | Ultrafine metal oxide powders by flame spray pyrolysis |
US5429670A (en) | 1993-04-26 | 1995-07-04 | Matsushita Electric Industrial Co., Ltd. | Gold paste for a ceramic circuit board |
JPH06318403A (en) | 1993-05-07 | 1994-11-15 | Murata Mfg Co Ltd | Copper paste for forming conductive coating film |
US5545360A (en) | 1993-06-08 | 1996-08-13 | Industrial Technology Research Institute | Process for preparing powders with superior homogeneity from aqueous solutions of metal nitrates |
US5384953A (en) * | 1993-07-21 | 1995-01-31 | International Business Machines Corporation | Structure and a method for repairing electrical lines |
US5378408A (en) * | 1993-07-29 | 1995-01-03 | E. I. Du Pont De Nemours And Company | Lead-free thick film paste composition |
US5494550A (en) * | 1993-09-07 | 1996-02-27 | Sensormatic Electronics Corporation | Methods for the making of electronic article surveillance tags and improved electronic article surveillance tags produced thereby |
US5470373A (en) * | 1993-11-15 | 1995-11-28 | The United States Of America As Represented By The Secretary Of The Navy | Oxidation resistant copper |
US5712673A (en) * | 1993-12-01 | 1998-01-27 | Dai Nippon Printing Co., Ltd. | Thermal transfer recording medium and thermal transfer recording method |
US5429657A (en) * | 1994-01-05 | 1995-07-04 | E. I. Du Pont De Nemours And Company | Method for making silver-palladium alloy powders by aerosol decomposition |
JPH07207185A (en) | 1994-01-21 | 1995-08-08 | Kawazumi Gijutsu Kenkyusho:Kk | Coated palladium fine powder and conductive paste |
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US5559057A (en) | 1994-03-24 | 1996-09-24 | Starfire Electgronic Development & Marketing Ltd. | Method for depositing and patterning thin films formed by fusing nanocrystalline precursors |
US5759939A (en) * | 1994-04-08 | 1998-06-02 | Kansas State University Research Foundation | Composite metal oxide adsorbents |
US5609919A (en) * | 1994-04-21 | 1997-03-11 | Altamat Inc. | Method for producing droplets |
DE4417495C1 (en) * | 1994-05-19 | 1995-09-28 | Schott Glaswerke | Prodn. of pure platinum materials reinforced with yttrium oxide |
US6379742B1 (en) * | 1994-06-22 | 2002-04-30 | Scientific Games Inc. | Lottery ticket structure |
US5599046A (en) * | 1994-06-22 | 1997-02-04 | Scientific Games Inc. | Lottery ticket structure with circuit elements |
EP0696515B1 (en) * | 1994-07-11 | 1998-12-02 | Agfa-Gevaert N.V. | Ink jet printing process |
DE69417555T2 (en) * | 1994-09-22 | 1999-10-21 | Asea Brown Boveri Ag, Baden | A method for producing a mixed metal oxide powder and the mixed metal oxide powder produced by this method |
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JPH08148787A (en) * | 1994-11-21 | 1996-06-07 | Sumitomo Kinzoku Ceramics:Kk | Thick film paste |
IL116377A (en) * | 1994-12-15 | 2003-05-29 | Cabot Corp | Reaction of carbon black with diazonium salts, resultant carbon black products and their uses |
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JPH08170112A (en) | 1994-12-16 | 1996-07-02 | Sumitomo Metal Mining Co Ltd | Production of metallic powder by spray thermal decomposition and apparatus therefor |
US5604027A (en) * | 1995-01-03 | 1997-02-18 | Xerox Corporation | Some uses of microencapsulation for electric paper |
US5861136A (en) | 1995-01-10 | 1999-01-19 | E. I. Du Pont De Nemours And Company | Method for making copper I oxide powders by aerosol decomposition |
US5523006A (en) * | 1995-01-17 | 1996-06-04 | Synmatix Corporation | Ultrafine powder lubricant |
US6548036B2 (en) * | 1995-05-04 | 2003-04-15 | Cabot Corporation | Method for producing carbon black |
US5565143A (en) | 1995-05-05 | 1996-10-15 | E. I. Du Pont De Nemours And Company | Water-based silver-silver chloride compositions |
US6156428A (en) * | 1995-06-02 | 2000-12-05 | Gibson; Charles P. | Base metal particles having anisometric morphology |
US5604673A (en) * | 1995-06-07 | 1997-02-18 | Hughes Electronics | Low temperature co-fired ceramic substrates for power converters |
US5882722A (en) * | 1995-07-12 | 1999-03-16 | Partnerships Limited, Inc. | Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds |
US5616165A (en) * | 1995-08-25 | 1997-04-01 | E. I. Du Pont De Nemours And Company | Method for making gold powders by aerosol decomposition |
AU6915696A (en) * | 1995-09-07 | 1997-03-27 | Penn State Research Foundation, The | High production rate of nano particles by laser liquid interaction |
DE19545455C1 (en) * | 1995-12-06 | 1997-01-23 | Degussa | Precious metal powder prodn. esp. for screen printing paste |
DE19548421B4 (en) * | 1995-12-22 | 2004-06-03 | Celanese Ventures Gmbh | Process for the continuous production of membrane electrode assemblies |
US5945158A (en) * | 1996-01-16 | 1999-08-31 | N.V. Union Miniere S.A. | Process for the production of silver coated particles |
US5763106A (en) * | 1996-01-19 | 1998-06-09 | Hino Motors, Ltd. | Composite powder and method for forming a self-lubricating composite coating and self-lubricating components formed thereby |
EP0809423A1 (en) * | 1996-05-23 | 1997-11-26 | Mitsumi Electric Company Ltd. | Flexible board |
US5747562A (en) * | 1996-06-14 | 1998-05-05 | Cabot Corporation | Ink and coating compositions containing silicon-treated carbon black |
US5948200A (en) * | 1996-07-26 | 1999-09-07 | Taiyo Yuden Co., Ltd. | Method of manufacturing laminated ceramic electronic parts |
JP3137035B2 (en) * | 1997-05-26 | 2001-02-19 | 昭栄化学工業株式会社 | Nickel powder and method for producing the same |
US6207268B1 (en) * | 1996-11-12 | 2001-03-27 | Dai Nippon Printing Co., Ltd. | Transfer sheet, and pattern-forming method |
US5725647A (en) * | 1996-11-27 | 1998-03-10 | Minnesota Mining And Manufacturing Company | Pigmented inks and humectants used therewith |
JP3205793B2 (en) * | 1996-12-19 | 2001-09-04 | 株式会社巴製作所 | Ultrafine particles and method for producing the same |
US6379745B1 (en) * | 1997-02-20 | 2002-04-30 | Parelec, Inc. | Low temperature method and compositions for producing electrical conductors |
US6019926A (en) * | 1997-02-20 | 2000-02-01 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration | Reflective silvered polyimide films via in situ thermal reduction silver (I) complexes |
US6780350B1 (en) * | 1997-02-24 | 2004-08-24 | Superior Micropowders Llc | Metal-carbon composite powders, methods for producing powders and devices fabricated from same |
US6338809B1 (en) * | 1997-02-24 | 2002-01-15 | Superior Micropowders Llc | Aerosol method and apparatus, particulate products, and electronic devices made therefrom |
US6316100B1 (en) * | 1997-02-24 | 2001-11-13 | Superior Micropowders Llc | Nickel powders, methods for producing powders and devices fabricated from same |
US6159267A (en) | 1997-02-24 | 2000-12-12 | Superior Micropowders Llc | Palladium-containing particles, method and apparatus of manufacture, palladium-containing devices made therefrom |
US6103393A (en) | 1998-02-24 | 2000-08-15 | Superior Micropowders Llc | Metal-carbon composite powders, methods for producing powders and devices fabricated from same |
US7097686B2 (en) * | 1997-02-24 | 2006-08-29 | Cabot Corporation | Nickel powders, methods for producing powders and devices fabricated from same |
US6699304B1 (en) * | 1997-02-24 | 2004-03-02 | Superior Micropowders, Llc | Palladium-containing particles, method and apparatus of manufacture, palladium-containing devices made therefrom |
US6679937B1 (en) * | 1997-02-24 | 2004-01-20 | Cabot Corporation | Copper powders methods for producing powders and devices fabricated from same |
US5894038A (en) * | 1997-02-28 | 1999-04-13 | The Whitaker Corporation | Direct deposition of palladium |
US6197366B1 (en) * | 1997-05-06 | 2001-03-06 | Takamatsu Research Laboratory | Metal paste and production process of metal film |
US5928405A (en) * | 1997-05-21 | 1999-07-27 | Degussa Corporation | Method of making metallic powders by aerosol thermolysis |
US6025026A (en) * | 1997-06-30 | 2000-02-15 | Transitions Optical, Inc. | Process for producing an adherent polymeric layer on polymeric substrates and articles produced thereby |
US6190931B1 (en) * | 1997-07-15 | 2001-02-20 | Silverbrook Research Pty. Ltd. | Method of manufacture of a linear spring electromagnetic grill ink jet printer |
US5879715A (en) * | 1997-09-02 | 1999-03-09 | Ceramem Corporation | Process and system for production of inorganic nanoparticles |
US6268014B1 (en) * | 1997-10-02 | 2001-07-31 | Chris Eberspacher | Method for forming solar cell materials from particulars |
CA2306384A1 (en) * | 1997-10-14 | 1999-04-22 | Patterning Technologies Limited | Method of forming an electronic device |
CA2277332C (en) * | 1997-12-05 | 2003-03-25 | Sumitomo Electric Industries, Ltd. | Dispersion-flattened optical fiber |
EP0989570A4 (en) * | 1998-01-22 | 2005-08-31 | Matsushita Electric Ind Co Ltd | Ink for electronic component, method for producing electronic component by using the ink for electronic component, and ink-jet device |
NL1008460C2 (en) * | 1998-03-03 | 1999-09-06 | Acheson Colloiden B V | Conductive ink or paint. |
EP0980097B1 (en) * | 1998-08-10 | 2013-01-09 | Ulvac, Inc. | Dispersion containing Cu ultrafine particles individually dispersed therein |
US6277740B1 (en) * | 1998-08-14 | 2001-08-21 | Avery N. Goldstein | Integrated circuit trenched features and method of producing same |
US7098163B2 (en) * | 1998-08-27 | 2006-08-29 | Cabot Corporation | Method of producing membrane electrode assemblies for use in proton exchange membrane and direct methanol fuel cells |
EP0985448A1 (en) * | 1998-08-28 | 2000-03-15 | Engelhard Corporation | Nickel catalyst |
US20030020768A1 (en) * | 1998-09-30 | 2003-01-30 | Renn Michael J. | Direct write TM system |
US6743319B2 (en) * | 1998-09-30 | 2004-06-01 | Paralec Inc. | Adhesiveless transfer lamination method and materials for producing electronic circuits |
US6358567B2 (en) * | 1998-12-23 | 2002-03-19 | The Regents Of The University Of California | Colloidal spray method for low cost thin coating deposition |
US6114088A (en) * | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
US6177151B1 (en) * | 1999-01-27 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Matrix assisted pulsed laser evaporation direct write |
JP4004675B2 (en) * | 1999-01-29 | 2007-11-07 | 株式会社日清製粉グループ本社 | Method for producing oxide-coated metal fine particles |
US6169234B1 (en) * | 1999-03-01 | 2001-01-02 | Pioneer Hi-Bred International, Inc. | Hybrid maize plant and seed 36B08 |
US6348295B1 (en) * | 1999-03-26 | 2002-02-19 | Massachusetts Institute Of Technology | Methods for manufacturing electronic and electromechanical elements and devices by thin-film deposition and imaging |
CN1248814C (en) * | 1999-08-31 | 2006-04-05 | 东邦钛株式会社 | Nickel powder for monolithic ceramic capacitor |
JP2001135138A (en) * | 1999-10-29 | 2001-05-18 | Matsushita Electric Ind Co Ltd | Conductor paste |
US6494931B1 (en) * | 1999-11-12 | 2002-12-17 | Mitsui Mining And Smelting Co., Ltd. | Nickel powder and conductive paste |
JP3957444B2 (en) * | 1999-11-22 | 2007-08-15 | 三井金属鉱業株式会社 | Nickel powder, manufacturing method thereof, and paste for forming electronic component electrodes |
CA2394895C (en) * | 1999-12-21 | 2014-01-28 | Plastic Logic Limited | Forming interconnects |
EP1110647A3 (en) * | 1999-12-22 | 2004-02-11 | Mitsui Mining and Smelting Co., Ltd | Paste to be fired for forming circuit board and method for preparing surface-modified silver powder |
JP3908426B2 (en) * | 1999-12-24 | 2007-04-25 | 日本碍子株式会社 | Ceramic capacitor electrode forming paste |
JP3841607B2 (en) * | 2000-02-03 | 2006-11-01 | 三井金属鉱業株式会社 | Nickel powder and conductive paste |
AU2001253142A1 (en) * | 2000-04-04 | 2001-10-30 | Parlex Corporation | High speed flip chip assembly process |
CN1238443C (en) * | 2000-04-17 | 2006-01-25 | 松下电器产业株式会社 | Ink for display panel and method for producing plasma display panel using the ink |
JP3753925B2 (en) * | 2000-05-12 | 2006-03-08 | 株式会社ルネサステクノロジ | Semiconductor integrated circuit |
DE10035211A1 (en) * | 2000-07-20 | 2002-01-31 | Beiersdorf Ag | Shaped soap product containing talc, one or more fatty acids in the form of their alkali soaps and one or more nonionic surfactants in the absence of alkyl (oligo) glycosides |
US6458431B2 (en) * | 2000-07-28 | 2002-10-01 | Ekc Technology, Inc. | Methods for the lithographic deposition of materials containing nanoparticles |
US7081214B2 (en) * | 2000-10-25 | 2006-07-25 | Harima Chemicals, Inc. | Electroconductive metal paste and method for production thereof |
JP4677092B2 (en) * | 2000-12-04 | 2011-04-27 | 株式会社アルバック | Electrode forming method for flat panel display |
JP3693647B2 (en) * | 2001-02-08 | 2005-09-07 | 日立マクセル株式会社 | Metal alloy fine particles and method for producing the same |
TW498409B (en) * | 2001-07-04 | 2002-08-11 | Ind Tech Res Inst | Forming method and apparatus of integrated circuit with passive devices |
US20060001726A1 (en) * | 2001-10-05 | 2006-01-05 | Cabot Corporation | Printable conductive features and processes for making same |
US20030070569A1 (en) * | 2001-10-11 | 2003-04-17 | Colin Bulthaup | Micro-stencil |
US20030073042A1 (en) * | 2001-10-17 | 2003-04-17 | Cernigliaro George J. | Process and materials for formation of patterned films of functional materials |
IL161622A0 (en) * | 2001-11-01 | 2004-09-27 | Yissum Res Dev Co | Ink jet inks containing metal nanoparticles |
AU2002366309A1 (en) * | 2001-12-18 | 2003-06-30 | Asahi Kasei Kabushiki Kaisha | Metal oxide dispersion |
JP4020764B2 (en) * | 2001-12-21 | 2007-12-12 | Jfeミネラル株式会社 | Super fine metal slurry with excellent dispersibility |
KR100453131B1 (en) * | 2002-08-10 | 2004-10-15 | 율촌화학 주식회사 | Nano-sized Metals or Metal Salts Stabilized by Using Chain-end Functionalized Polymers and Their Synthetic Methods |
US20040058457A1 (en) * | 2002-08-29 | 2004-03-25 | Xueying Huang | Functionalized nanoparticles |
GB0221893D0 (en) * | 2002-09-20 | 2002-10-30 | Avecia Ltd | Process |
EP1544905A4 (en) * | 2002-09-25 | 2009-11-18 | Konica Minolta Holdings Inc | Electric circuit, thin film transistor, method for manufacturing electric circuit and method for manufacturing thin film transistor |
US7585349B2 (en) * | 2002-12-09 | 2009-09-08 | The University Of Washington | Methods of nanostructure formation and shape selection |
US6880909B2 (en) * | 2003-04-22 | 2005-04-19 | Lexmark International Inc. | Method and apparatus for adjusting drop velocity |
US7202155B2 (en) * | 2003-08-15 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing wiring and method for manufacturing semiconductor device |
US20060083694A1 (en) * | 2004-08-07 | 2006-04-20 | Cabot Corporation | Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same |
JP2008514149A (en) * | 2004-09-22 | 2008-05-01 | フリー・システムズ・ピーティーイー・リミテッド | Apparatus and method for adaptive digital locking and soft evaluation of data symbols in a wireless digital communication system |
WO2006076611A2 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Production of metal nanoparticles |
-
1998
- 1998-02-24 US US09/028,678 patent/US6316100B1/en not_active Expired - Lifetime
- 1998-02-24 US US09/028,034 patent/US6165247A/en not_active Expired - Lifetime
- 1998-02-24 JP JP53695898A patent/JP2001513697A/en active Pending
- 1998-02-24 WO PCT/US1998/003530 patent/WO1998036888A1/en active IP Right Grant
- 1998-02-24 CA CA002280865A patent/CA2280865C/en not_active Expired - Fee Related
- 1998-02-24 EP EP98910041A patent/EP1007308B1/en not_active Expired - Lifetime
- 1998-02-24 DE DE69819740T patent/DE69819740T2/en not_active Expired - Lifetime
- 1998-02-24 US US09/028,277 patent/US6277169B1/en not_active Expired - Lifetime
- 1998-02-24 AU AU64383/98A patent/AU6438398A/en not_active Abandoned
- 1998-02-24 US US09/030,051 patent/US7625420B1/en not_active Expired - Fee Related
-
2000
- 2000-09-22 US US09/668,805 patent/US6689186B1/en not_active Expired - Lifetime
-
2004
- 2004-02-09 US US10/774,791 patent/US7004994B2/en not_active Expired - Fee Related
- 2004-09-24 US US10/949,601 patent/US7354471B2/en not_active Expired - Fee Related
- 2004-11-01 US US10/904,254 patent/US7384447B2/en not_active Expired - Fee Related
-
2006
- 2006-12-21 US US11/642,686 patent/US7597769B2/en not_active Expired - Fee Related
- 2006-12-21 US US11/642,690 patent/US7621976B2/en not_active Expired - Fee Related
-
2008
- 2008-06-05 US US12/134,006 patent/US7727630B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3415640A (en) * | 1966-10-28 | 1968-12-10 | Fansteel Metallurgical Corp | Process for making dispersions of particulate oxides in metals |
US3510291A (en) * | 1966-11-10 | 1970-05-05 | Westinghouse Electric Corp | Vapor phase conversion of molybdenum or tungsten compound to form the oxide or metal |
US3617358A (en) * | 1967-09-29 | 1971-11-02 | Metco Inc | Flame spray powder and process |
US3846345A (en) * | 1969-10-06 | 1974-11-05 | Owens Illinois Inc | Electroconductive paste composition and structures formed therefrom |
US4130671A (en) * | 1977-09-30 | 1978-12-19 | The United States Of America As Represented By The United States Department Of Energy | Method for preparing a thick film conductor |
US4799622A (en) * | 1986-08-05 | 1989-01-24 | Tao Nenryo Kogyo Kabushiki Kaisha | Ultrasonic atomizing apparatus |
US5495386A (en) * | 1993-08-03 | 1996-02-27 | Avx Corporation | Electrical components, such as capacitors, and methods for their manufacture |
Non-Patent Citations (1)
Title |
---|
See also references of EP1007308A4 * |
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Also Published As
Publication number | Publication date |
---|---|
US20040231758A1 (en) | 2004-11-25 |
US7004994B2 (en) | 2006-02-28 |
US7354471B2 (en) | 2008-04-08 |
DE69819740D1 (en) | 2003-12-18 |
US6689186B1 (en) | 2004-02-10 |
US7597769B2 (en) | 2009-10-06 |
EP1007308A1 (en) | 2000-06-14 |
EP1007308A4 (en) | 2000-06-14 |
US7384447B2 (en) | 2008-06-10 |
US6165247A (en) | 2000-12-26 |
US20050097988A1 (en) | 2005-05-12 |
US20050061107A1 (en) | 2005-03-24 |
US7625420B1 (en) | 2009-12-01 |
EP1007308B1 (en) | 2003-11-12 |
US7727630B2 (en) | 2010-06-01 |
JP2001513697A (en) | 2001-09-04 |
CA2280865C (en) | 2008-08-12 |
US6316100B1 (en) | 2001-11-13 |
CA2280865A1 (en) | 1998-08-27 |
US20070122549A1 (en) | 2007-05-31 |
US7621976B2 (en) | 2009-11-24 |
AU6438398A (en) | 1998-09-09 |
DE69819740T2 (en) | 2004-09-30 |
US20080233422A1 (en) | 2008-09-25 |
US20070104605A1 (en) | 2007-05-10 |
US6277169B1 (en) | 2001-08-21 |
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