WO1997035456A1 - Element electroluminescent a couches minces et element d'affichage et dispositif d'affichage l'utilisant - Google Patents

Element electroluminescent a couches minces et element d'affichage et dispositif d'affichage l'utilisant

Info

Publication number
WO1997035456A1
WO1997035456A1 PCT/JP1996/000684 JP9600684W WO9735456A1 WO 1997035456 A1 WO1997035456 A1 WO 1997035456A1 JP 9600684 W JP9600684 W JP 9600684W WO 9735456 A1 WO9735456 A1 WO 9735456A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
light emitting
display element
control electrode
lower electrode
Prior art date
Application number
PCT/JP1996/000684
Other languages
English (en)
Japanese (ja)
Inventor
Mutsumi Suzuki
Toshiaki Kusunoki
Masatoshi Shiiki
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP1996/000684 priority Critical patent/WO1997035456A1/fr
Publication of WO1997035456A1 publication Critical patent/WO1997035456A1/fr

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode

Definitions

  • the present invention relates to a light-emitting element that controls light according to an electric signal, a display element using the same, and a display device.
  • ELD electrosolescence display
  • PDP plasma display
  • LED light emitting diode display
  • VFD fluorescent display
  • ELD electrosolescence display
  • the ELD is composed of thin films stacked in this order: lower electrode, insulating layer, light emitting layer, insulating layer, upper electrode, and applying an AC voltage of several hundred volts between the lower electrode and upper electrode to cause the light emitting layer to emit light. It is. In this case, the accumulated electrons between the insulating layer and the light emitting layer are accelerated by an electric field according to the applied voltage to become a hot electron, and collide with the light emitting body in the light emitting eyebrows to emit light.
  • ELD electrowetting-on-dielectric
  • a light-emitting layer with a thickness of about 1 ⁇ m is required to increase the amount of light-emitting elements in order to obtain a certain level of brightness.
  • an electric field sufficient to generate hot electrons is required.
  • a voltage of about 200 V is required. Therefore, there was a problem that a high-voltage drive circuit was required.
  • An object of the present invention is to provide a thin-film light-emitting device, a display device and a display device using the thin-film light-emitting device, which can control the generation of hot electrons with a small voltage of about 10 V. .
  • the above object can be achieved by a multilayer structure consisting of a lower electrode, an insulating layer, a control electrode, a light emitting layer, and an upper electrode.
  • the feature is that the electron generation part and the light emission part were separated by introducing a control electrode.
  • FIG. 1 shows a specific example of the present invention.
  • a lower electrode 11 is laminated with an insulating layer 12, a control electrode 13, a light emitting layer 14, and an upper electrode 15.
  • the film thicknesses of the insulating layer 12, the control electrode 13 and the light emitting layer 14 are about l to 50 nm, about 3 to 30 nm, and about l to 200 m, respectively.
  • Figure 2 shows the case where a voltage of about 1 to 50 V is applied to the control electrode 13 to the lower electrode 11, and a voltage of about 50 to 500 V is applied to the upper electrode 15 to the control electrode 13.
  • reference numeral 211 denotes a valence band of the lower electrode 11
  • reference numeral 212 denotes a node gap of the insulating layer 12
  • reference numeral 21 denotes a valence band of the control electrode 13
  • reference numeral 21 denotes a valence band of the control electrode.
  • 4 indicates the band gap of the emitting eyebrows 14 and 2 15 indicates the valence band of the upper electrode 15.
  • the electron generator consists of the lower electrode 1 1, the insulating layer 1 2, and the control electrode 13.
  • a small control voltage is applied to the control electrode 13.
  • the thickness of the insulating layer 12 is 5 nm
  • 5 V is applied to the control electrode 13
  • the electric field in the insulating layer 12 becomes l OM VZ cm.
  • the electrons in the lower electrode 11 pass through the potential barrier between the lower electrode 11 and the insulating layer 12 due to the tunnel phenomenon, and enter the conduction band of the insulating layer 12.
  • control electrode 13 is reached.
  • These electrons are hot electrons having an energy of several eV to 10 several eV, and a certain proportion of the electrons are in the insulating layer 12 or the control electrode 13. Energy is lost due to inelastic scattering.
  • Those with energy higher than the interface wall height are injected into the conduction band of the light-emitting layer 14. The injected electrons are accelerated by a large applied voltage to the upper electrode 15 and, on the way, collide with the light emitter in the light emitting layer 14 to emit light.
  • the amount of light emission can be controlled by a small control voltage applied to the control electrode, and the light emission is compared with the conventional ELD in which the light emission is switched on and off by the voltage applied to the upper electrode. Lighting. Voltage for non-lighting can be greatly reduced.
  • the lower electrode 11 is formed in a stripe shape arranged in a horizontal direction
  • the control electrode 13 is formed in a stripe shape arranged in a vertical direction.
  • the operating voltage increased almost in proportion to the increase in film thickness.
  • the thickness of the light emitting layer 14 when the thickness of the light emitting layer 14 is increased, only the voltage applied to the upper electrode 15 needs to be increased, and the control voltage for controlling light emission does not increase. . Therefore, the thickness of the luminous eyebrows 14 should be optimized so that the luminous intensity is maximized, and the luminosity can be higher than that of the conventional ELD. Furthermore, in the present invention, by inserting an insulating layer between the control electrode 13 and the light emitting layer 14, it is possible to further improve the luminous efficiency and the luminous brightness. .
  • the reason why the luminous efficiency can be further improved is as follows.
  • the control electrode 13 to the light emitting layer 14 Many electrons flow into the conduction band, resulting in energy band bending.
  • the electric field applied to the light-emitting layer 14 concentrates between a and b in the figure, and the electric field between b and c becomes weaker. Electrons are hardly accelerated. For this reason, the luminous efficiency in the light emitting layer 14 decreases. Therefore, if an insulating layer is inserted between the control electrode 13 and the light-emitting layer 14, the amount of electrons injected into the light-emitting layer 14 is limited, and as shown in Fig. 12 (b) In addition, the bending of the energy band can be prevented. As a result, electrons are more efficiently accelerated in the light emitting layer 14 and the luminous efficiency can be increased.
  • the reason why the emission luminance can be further increased is that the control electrode This is because a higher voltage can be applied to the upper electrode 15 because the insulation withstand voltage between the upper electrode 15 and the upper compress electrode 15 is improved.
  • Japanese Patent Application Laid-Open No. H04-110392 discloses a light emitting device having a reference electrode fixed to a reference voltage instead of the control electrode 13 of the present invention.
  • FIG. 1 is a cross-sectional view of a thin-film light-emitting device according to Example 1 of the present invention.
  • FIG. 2 is a diagram showing the operation principle of the thin-film light-emitting device of the present invention.
  • FIG. 3 is a diagram showing an applied voltage to a control electrode of the thin-film light-emitting device of the first embodiment of the present invention. .
  • FIG. 4 is a diagram showing the relationship between the light emission intensity and the applied voltage of the thin film light emitting device of Example 1 of the present invention.
  • FIG. 5 is a sectional view of a display element according to Example 3 of the present invention.
  • FIG. 6 is an electrode pattern diagram of a display element according to Example 3 of the present invention.
  • FIG. 7 is a connection diagram of a drive circuit for a display element according to a third embodiment of the present invention.
  • FIG. 8 is a driving waveform diagram of the display element according to the third embodiment of the present invention.
  • FIG. 9 is a cross-sectional view of the display element according to the fourth embodiment of the present invention.
  • FIG. 10 is a sectional view of a display element according to Example 5 of the present invention.
  • FIG. 11 is a plan view of a display element according to Example 6 of the present invention.
  • FIG. 12 is an energy curve near the interface between the control electrode and the light emitting layer in FIG.
  • FIG. 13 is a cross-sectional view of a light emitting device according to Example 2 of the present invention.
  • FIG. 14 is a sectional view of a display element according to Example 7 of the present invention.
  • a thin-film light-emitting device according to a first embodiment of the present invention will be described with reference to FIG.
  • A1 is formed on the insulating substrate 10 as the lower electrode 11 with a thickness of, for example, 50 nm.
  • RF magnetron sputtering is used for forming A 1.
  • the surface of A1 is anodized to form an insulating layer 12 with a thickness of about 5 nm.
  • Au is deposited to a thickness of about 1 Onm by RF magnetron sputtering or vapor deposition to form a control electrode 13.
  • ZnS: Mn is deposited to a thickness of ⁇ 100 ⁇ m by electron beam evaporation to form the luminescent layer 14.
  • the light-emitting layer 14 may be formed by chemical vapor deposition.
  • a transparent ITO electrode is formed with a thickness of about 200 nm by a method such as sputtering.
  • Upper electrode 15 Finally, the entire device is covered with A123 of a thickness of about 500 nm to form a protective layer 20 against moisture.
  • the protective layer 20 is formed by using an electron beam evaporation method or the like.
  • the protective layer 20 has a function of preventing the ZnS-based material of the light-emitting layer 14 from absorbing moisture and being deteriorated.
  • the lower electrode 11 is set to a ground potential, and a voltage of 200 V is applied to the upper electrode 15.
  • a pulse voltage of amplitude Vc is applied to control electrode 13 as shown in Fig. 3.
  • V c is about 5 V, orange emission is observed.
  • Z n S Z instead of M n n S: The use of T m F 3 blue light is obtained, Z n S: T b F 3 was used which if green Light emission is obtained.
  • similar thin-film light emitting element is also of an insulating material such as A 1 2 0 3 instead of the semiconductor of Z n S as a base material is obtained.
  • the base material of the present invention may include any of a semiconductor and an insulator.
  • a 1 is used for the lower electrode 11 and Au is used for the control electrode 13. If it is the material of ', anything is fine. Likewise, insulating layer 1 second material is also not even or say the child similar element can be obtained by using other insulation ⁇ fees such as S i 0 2.
  • a thin-film light-emitting device according to a second embodiment of the present invention will be described with reference to FIG. 13.
  • the process up to the formation of the control electrode 13 is performed in the same manner as in the first embodiment.
  • rf sputtering-rings, or an insulator, such as by Ri S i 0 2 and Y 2 0 3 in the vapor deposition is formed with a thickness of 1 0 to 5 0 0 nm, and the insulating layer 1 8.
  • the light emitting layer 14, the upper electrode 15 and the protective layer 20 are formed in the same manner as in the first embodiment.
  • a display device will be described with reference to FIG. 5 and FIG.
  • parallel patterning is performed as shown in Fig. 6 by using a mask or a combination of photolithography and etching.
  • an insulating layer 12 is formed by anodic oxidation.
  • an insulating layer such as SiO 2 is formed by a method such as sputtering to form an electrode end protective layer 31.
  • the electrode end protective layer 3 i prevents the electric field from concentrating on the end of the lower electrode 11, thereby preventing the destruction of the element, and extending the life of the element.
  • control electrode 13 is formed only at the intersection with the lower electrode 11 as shown in Fig. 6.
  • a material having a high conductivity such as Au
  • Au is formed to a thickness of about 500 nm, and is patterned into parallel lines perpendicular to the lower electrode pattern as shown in FIG. 32.
  • the resistance can be reduced by making the film thickness of the control electrode bus line 32 larger than the film thickness of the control electrode 13 as described above.
  • the width of the control electrode pass line 32 is made smaller than the width of the control electrode 13 so that the electrode area as the entire control electrode including the control electrode 13 and the control electrode bus line 32 is reduced.
  • control electrode pattern and the shape of the lower electrode pattern were parallel lines, and were perpendicular to each other.
  • the control electrode pattern and the lower electrode pattern intersect each other with a force, ', and a thin-film light-emitting element at the intersection of them can be selected, the pattern shape is parallel and orthogonal to each other. This is not essential and other shapes may be used.
  • a ZnS: Mn film is formed on the entire surface of the substrate by electron beam evaporation to form a light-emitting layer 14.
  • a transparent IT0 electrode is formed with a thickness of about 200 nm by a method such as sputtering and used as the upper electrode 15.
  • an electron beam evaporation method or the like is used for forming the protective layer 20.
  • the protective layer 20 has a function of preventing the ZnS-based material of the light emitting layer 14 from absorbing moisture and being deteriorated.
  • FIG. 7 is a connection diagram to the drive circuit.
  • the lower electrode 11 is connected to the lower electrode drive circuit 41, and the control electrode bus line 32 is connected to the control electrode drive circuit 42.
  • the upper electrode 15 is connected to the upper electrode drive circuit 43. Let the dot at the intersection of the n-th lower electrode 1 ⁇ ⁇ and the m-th control electrode bus line 32 C m be (n, m).
  • Figure 8 shows the waveform of the voltage generated by each drive circuit.
  • a voltage of about 100 to 400 V is always applied to the upper electrode 15.
  • both the lower electrode 11 and the control electrode 32 are at zero voltage and do not light.
  • a voltage of 1 V1 is applied to the lower electrode 11K1 and a voltage of + V2 is applied to the control electrode bus lines 32C1 and 32C2. Since a voltage of (V 1 + V 2) is applied between the lower electrode 11 and the control electrode 13 of the dots (1, 1) and (1, 2), (V 1 + V 2) is generated. If the voltage is set equal to or higher than the light start voltage, these two dots emit light.
  • a voltage of 1 V1 is applied to the lower electrode 11K2.
  • a display element according to a fourth embodiment of the present invention will be described with reference to FIG. Until the control electrode bus line 32 is formed, it is manufactured in the same manner as in FIG. When the light emitting layer 14 is formed, a mask is used to form the light emitting layer A 34, the light emitting layer B 35, and the light emitting layer C 36 by patterning light emitting layers of different materials. The formation of the upper electrode 15 and the protective layer 20 is the same as in the third embodiment.
  • each dot Since red, green, and blue light can be emitted for each dot, color display can be achieved by adjusting the emission intensity of each dot with the voltage V 1 applied to the control electrode 13.
  • a display element according to a fifth embodiment of the present invention will be described with reference to FIG.
  • Lines in the n + region are provided on the surface of the Si substrate in the same pattern as in Fig. 6, and The lower electrode is 1 1.
  • an insulating layer 12 is formed on the substrate surface by thermal oxidation.
  • the control electrode 13 is formed of Au or the like.
  • the control electrode bus line 32 is formed in the same pattern as in Fig. 6.
  • the light emitting layer 14 the upper electrode 15 and the protective layer 20 are formed to complete the display element.
  • FIG. 11 shows a pattern of the lower electrode 11 and the control electrode 13 of the display element having the sectional structure of FIG.
  • the lower electrode 11 and the insulating layer 12 are formed uniformly without patterning, and the patterned control electrode 13 is formed on it as shown in Fig. 11.
  • a control electrode bus line 32 for power supply is wired to each control electrode 13.
  • the light emitting layer 14 and the upper electrode 15 are formed on the entire surface. It is obvious from the above description that the display element manufactured in this way can display video information by appropriately setting the voltage applied to each control electrode 13.
  • the same display element can be obtained by patterning the lower electrode 11 without patterning the control electrode 13, the force for patterning the control electrode 13, and the control electrode 13. Needless to say.
  • Example 7 A display element according to a seventh embodiment of the present invention will be described with reference to FIG.
  • the control electrode bus lines 32 are formed.
  • an insulator such as rf sputtering Li Nguma other S i O 2 or Y 2 0 3 Ri by the evaporation, and 2 0 ⁇ 5 0 0 nm in film thickness formed insulating layer 1 8 I do.
  • the light emitting layer 14, the upper electrode 15 and the protective layer 20 are formed in the same manner as in the third embodiment, and the display element is completed.
  • the connection method to the drive circuit and the output voltage waveform of the drive circuit are the same as in the previous embodiment.
  • the upper electrode is made of a light-transmitting material and light is emitted from the upper electrode side.
  • light can be emitted from the lower electrode side.
  • the thickness from the light emitting layer to the lower electrode is reduced so that light is transmitted, and the lower electrode and the substrate are made of a light-transmitting material.
  • a light-emitting element that can control light emission with a small voltage or a display element that can control an image with a small voltage.
  • a power supply circuit that uses these display elements to generate an input voltage to a drive circuit for the display elements, and a video information signal to control electrodes of the display elements. It is possible to provide a display device such as a video monitor display or a data display having a signal conversion circuit for converting a signal voltage to be applied to the device.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Un élément électroluminescent à couches minces présente une structure multicouches constituée d'une électrode inférieure, d'une couche isolante, d'une électrode de commande, d'une couche électroluminescente et d'une électrode supérieure. Un élément d'affichage et un dispositif d'affichage utilisant tous deux cet élément électroluminescent sont également décrits. La caractéristique de l'élément électroluminescent à couches minces est qu'une section génératrice d'électrons et une section électroluminescente sont séparées l'une de l'autre par introduction de l'électrode de commande et, étant donné que la production d'électrons chauds peut être commandée sous une tension d'environ 10 V, l'émission de lumière de la couche électroluminescente peut être commandée sous basse tension.
PCT/JP1996/000684 1996-03-15 1996-03-15 Element electroluminescent a couches minces et element d'affichage et dispositif d'affichage l'utilisant WO1997035456A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP1996/000684 WO1997035456A1 (fr) 1996-03-15 1996-03-15 Element electroluminescent a couches minces et element d'affichage et dispositif d'affichage l'utilisant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1996/000684 WO1997035456A1 (fr) 1996-03-15 1996-03-15 Element electroluminescent a couches minces et element d'affichage et dispositif d'affichage l'utilisant

Publications (1)

Publication Number Publication Date
WO1997035456A1 true WO1997035456A1 (fr) 1997-09-25

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WO (1) WO1997035456A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024580A (ja) * 1983-07-21 1985-02-07 関口　忠 カラ−マトリクスデイスプレイのセル
JPH01315991A (ja) * 1988-06-15 1989-12-20 Hitachi Maxell Ltd 薄膜型エレクトロルミネツセンス素子とその駆動方法
JPH02213089A (ja) * 1989-02-14 1990-08-24 Kenwood Corp 薄膜ｅｌ素子の構造
JPH04368795A (ja) * 1991-06-14 1992-12-21 Fuji Xerox Co Ltd 薄膜トランジスタ内蔵薄膜ｅｌ素子
JPH0648799Y2 (ja) * 1988-05-18 1994-12-12 株式会社小松製作所 交流薄膜ｅｌ素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6024580A (ja) * 1983-07-21 1985-02-07 関口　忠 カラ−マトリクスデイスプレイのセル
JPH0648799Y2 (ja) * 1988-05-18 1994-12-12 株式会社小松製作所 交流薄膜ｅｌ素子
JPH01315991A (ja) * 1988-06-15 1989-12-20 Hitachi Maxell Ltd 薄膜型エレクトロルミネツセンス素子とその駆動方法
JPH02213089A (ja) * 1989-02-14 1990-08-24 Kenwood Corp 薄膜ｅｌ素子の構造
JPH04368795A (ja) * 1991-06-14 1992-12-21 Fuji Xerox Co Ltd 薄膜トランジスタ内蔵薄膜ｅｌ素子

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