WO1997015699B1 - Method and apparatus for the deposition of parylene af4 onto semiconductor wafers - Google Patents
Method and apparatus for the deposition of parylene af4 onto semiconductor wafersInfo
- Publication number
- WO1997015699B1 WO1997015699B1 PCT/US1996/017003 US9617003W WO9715699B1 WO 1997015699 B1 WO1997015699 B1 WO 1997015699B1 US 9617003 W US9617003 W US 9617003W WO 9715699 B1 WO9715699 B1 WO 9715699B1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- outlet
- ofthe
- deposition
- chamber
- pipe
- Prior art date
Links
- 229920000052 poly(p-xylylene) Polymers 0.000 title claims abstract 10
- 235000012431 wafers Nutrition 0.000 title abstract 8
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000010438 heat treatment Methods 0.000 claims abstract 14
- 238000001816 cooling Methods 0.000 claims abstract 10
- 238000000151 deposition Methods 0.000 claims abstract 10
- 239000012530 fluid Substances 0.000 claims 53
- 238000000197 pyrolysis Methods 0.000 claims 36
- 239000000758 substrate Substances 0.000 claims 20
- 238000009834 vaporization Methods 0.000 claims 12
- 239000000463 material Substances 0.000 claims 7
- 239000011248 coating agent Substances 0.000 claims 6
- 238000000576 coating method Methods 0.000 claims 6
- 229910052904 quartz Inorganic materials 0.000 claims 6
- 239000010453 quartz Substances 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 239000000539 dimer Substances 0.000 claims 2
- 229920002313 fluoropolymer Polymers 0.000 claims 2
- 239000004811 fluoropolymer Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 239000000178 monomer Substances 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 230000002093 peripheral Effects 0.000 claims 1
- 239000004810 polytetrafluoroethylene Substances 0.000 claims 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Abstract
Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. A method of depositing parylene AF4 onto the surface of a semiconductor wafer includes cooling the semiconductor chip wafer and depositing parylene monomers onto a surface of the wafer. The method may further include heating the wafer and/or heating the wafer to a predetermined annealing temperature, and subsequently re-cooling the wafer.
Claims
1. A method of forming a layer of parylene on a substrate, the method comprising the steps of: cooling the substrate to a temperature below about 15 °C; depositing parylene monomers on the substrate; and heating the substrate to a temperature of from about 100CC to about 400 °C.
2. The method according to claim 1, wherein the step of cooling the substrate includes cooling the substrate to a temperature between about 0°C and about 15°C.
3. The method according to claim 1, wherein the step of cooling the substrate includes cooling the substrate to a temperature below about 0°C.
4. The method according to claim 1, further comprising the step, performed prior to the depositing step, of reducing a pressure adjacent the substrate to less than atmospheric pressure.
5. The method according to claim 1 , further comprising the step, performed after the depositing step, of heating the substrate to a temperature greater than about room temperature.
6. The method according to claim 1 , further comprising the step, performed after the depositing step, of heating the substrate to a temperature above about 100°C.
7. Canceled.
8. The method according to claim 1, further comprising the step of heating inner walls of a chamber in which the depositing step occurs.
9. The method according to claim 1, further comprising the step, performed before the cooling step, of clamping the substrate to a platen.
10. The method according to claim 9, wherein the clamping step includes electrostatically clamping the substrate to a platen.
1 1. The method according to claim 1 , further comprising the steps of: vaporizing parylene dimer; and pyrolizing the parylene dimer to form the parylene monomer.
12. The method according to claim 1 , wherein the depositing step includes depositing the parylene monomer to a predetermined thickness.
13. A deposition apparatus having an interior and an exterior, the deposition apparatus comprising: a deposition chamber for depositing a film on a substrate, the deposition chamber being disposed within the deposition apparatus; and an atmospheric shroud surrounding the deposition chamber, the atmospheric shroud having an area for containing a gas such that a flow of oxygen from the exterior of the deposition apparatus to the interior of the deposition apparatus is substantially reduced.
14. The deposition apparatus according to claim 13, further comprising a pyrolysis chamber having an inlet in fluid communication with an inlet ofthe deposition chamber, the pyrolysis chamber being disposed within the interior ofthe deposition apparatus, the pyrolysis chamber being surrounded by an atmospheric shroud.
15. The deposition apparatus according to claim 14, further comprising a post-pyrolysis chamber having an inlet and an outlet, the inlet ofthe post-pyrolysis chamber being in fluid communication with the outlet of the pyrolysis chamber, the outlet of the post-pyrolysis chamber being in fluid communication with the inlet ofthe deposition chamber, the post-pyrolysis chamber being disposed within the interior of the deposition apparatus, the post-pyrolysis chamber being surrounded by the atmospheric shroud.
16. The deposition apparatus according to claim 13. further comprising an inert gas disposed within the area of the atmospheric shroud for containing the gas.
17. The deposition apparatus according to claim 16, wherein a pressure inside the deposition chamber is less than atmospheric pressure.
18. The deposition apparatus according to claim 13, wherein a pressure inside the deposition apparatus is less than atmospheric pressure.
19. The deposition apparatus according to claim 15, further comprising a heater for heating the temperature ofthe substrate disposed within the deposition chamber.
20. The deposition apparatus according to claim 19, further comprising a cooling system for reducing a temperature ofthe substrate disposed within the deposition chamber.
21. The deposition apparatus according to claim 15, further comprising a cooling system for reducing a temperature ofthe substrate disposed within the deposition chamber.
22. The deposition apparatus according to claim 20, further comprising a vacuum pump in fluid communication with an outlet ofthe deposition chamber.
23. The deposition apparatus according to claim 22, further comprising a cold trap disposed between the outlet ofthe deposition chamber and the vacuum pump.
24. The deposition apparatus according to claim 23, wherein the vacuum pump is a dry pump.
25. The deposition apparatus according to claim 24, further comprising a heater for heating inner walls ofthe deposition chamber.
26. An apparatus, comprising: a deposition chamber having an outlet; an oilless vacuum pump having an inlet directly connected to the outlet of the deposition chamber; and a cold trap having an inlet directly connected to the outlet of the oilless vacuum pump.
27. The apparatus according to claim 26, further comprising a vaporization chamber; and a pyrolysis chamber in fluid communication with the vaporization and deposition chambers.
28. The apparatus according to claim 27, further comprising a post-pyrolysis chamber in fluid communication with the pyrolysis and deposition chambers.
29. Canceled.
30. Canceled.
31. Canceled.
32. The apparatus according to claim 26, further comprising first and second pipe providing the direct connection between the deposition chamber and the oilless vacuum pump.
33. The apparatus according to claim 32, wherein the first pipe has a first diameter and the second pipe has a second diameter, the first diameter being smaller than the second diameter.
34. The apparatus according to claim 33, further comprising a valve capable of preventing fluid communication between the deposition chamber and oilless vacuum pump through the second pipe.
35. The apparatus according to claim 27, further comprising first and second pipe providing the direct connection between the deposition chamber and the oilless vacuum pump.
36. The apparatus according to claim 35, wherein the first pipe has a first diameter and the second pipe has a second diameter, the first diameter being smaller than the second diameter.
37. The apparatus according to claim 36, further comprising a valve capable of preventing fluid communication between the deposition chamber and oilless vacuum pump through the second pipe.
38. The apparatus according to claim 37, further comprising first and second pipe providing the direct connection between the deposition chamber and the oilless vacuum pump.
39. The apparatus according to claim 38, wherein the first pipe has a first diameter and the second pipe has a second diameter, the first diameter being smaller than the second diameter.
40. The apparatus according to claim 39, further comprising a valve capable of preventing fluid communication between the deposition chamber and oilless vacuum pump through the second pipe.
41. The apparatus according to claim 40, further comprising first and second pipe providing the direct connection between the deposition chamber and the oilless vacuum pump.
42. The apparatus according to claim 41, wherein the first pipe has a first diameter and the second pipe has a second diameter, the first diameter being smaller than the second diameter.
43. The apparatus according to claim 42, further comprising a valve capable of preventing fluid communication between the deposition chamber and oilless vacuum pump through the second pipe.
44. The apparatus according to claim 41 , further comprising first and second pipes providing the direct connection between the deposition chamber and the oilless vacuum pump.
45. The apparatus according to claim 44, wherein the first pipe has a first diameter and the second pipe has a second diameter, the first diameter being smaller than the second diameter.
46. The apparatus according to claim 45, further comprising a valve capable of preventing fluid communication between the deposition chamber and oilless vacuum pump through the second pipe.
47. The apparatus according to claim 44, further comprising first and second pipe providing the direct connection between the deposition chamber and the oilless vacuum pump.
48. The apparatus according to claim 47, wherein the first pipe has a first diameter and the second pipe has a second diameter, the first diameter being smaller than the second diameter.
49. The apparatus according to claim 48, further comprising a valve capable of preventing fluid communication between the deposition chamber and oilless vacuum pump through the second pipe.
50. A deposition apparatus, comprising: a vaporization chamber having an outlet; a container disposed within the deposition chamber; a heater in thermal communication with the container, the heater being capable of vaporizing a nongaseous material disposed within the container to form a gaseous material; a temperature sensor in thermal communication with the container, the temperature sensor being capable of monitoring the temperature ofthe container; a pyrolysis chamber having an inlet and an outlet, the inlet ofthe pyrolysis chamber being in fluid communication with the outlet ofthe vaporization chamber such that the gaseous material can pass from the vaporization chamber to the pyrolysis chamber; a deposition chamber having an inlet in fluid communication with the outlet of the pyrolysis chamber such that the gaseous material can pass from the pyrolysis chamber to the deposition chamber; and a quartz crystal disposed within the deposition chamber, the quartz crystal being capable of receiving a portion of the gaseous material to form a coating on the quartz crystal, the quartz crystal being capable of monitoring the thickness ofthe coating.
51. The deposition apparatus according to claim 50, further comprising a circuit capable of monitoring the thickness ofthe coating on the quartz crystal.
52. The deposition apparatus according to claim 51 , wherein the circuit is capable of reducing the temperature of the container when the thickness ofthe coating reaches a predetermined value.
53. The deposition apparatus according to claim 52, wherein the circuit is capable of reducing a power output ofthe heater when the thickness ofthe coating reaches a predetermined value.
54. The deposition apparatus according to claim 53, wherein the circuit is capable of reducing a power output ofthe heater when the thickness of the coating reaches a predetermined value.
55. The deposition apparatus according to claim 50, further comprising a heater for heating inner walls ofthe vaporization chamber.
56. The deposition apparatus according to claim 55, further comprising a heater for heating inner walls ofthe pyrolysis chamber.
57. The deposition apparatus according to claim 56, further comprising a heater for heating inner walls of the deposition chamber.
58. The deposition apparatus according to claim 50, further comprising a post-pyrolysis chamber having an inlet and an outlet, the inlet ofthe post-pyrolysis chamber being in fluid communication with the outlet ofthe pyrolysis chamber such that the gaseous material can pass from the pyrolysis chamber to the post-pyrolysis chamber, the outlet ofthe post-pyrolysis chamber being in fluid communication with the deposition chamber such that the gaseous material can pass from the post-pyrolysis chamber to the deposition chamber.
59. The deposition apparatus according to claim 50, further comprising a platen disposed in the deposition chamber.
60. The deposition apparatus according to claim 59, wherein the quartz crystal is located in a recess formed in a surface ofthe platen.
61. The deposition apparatus according to claim 60. wherein the recess is located along an outer peripheral edge ofthe platen.
62. The deposition apparatus according to claim 50, wherein the circuit includes a microprocessor.
63. A deposition chamber, comprising: a body including an inlet opening having a diameter and at least one outlet opening having a diameter, the diameter of the inlet opening being greater than the diameter of the at least one outlet opening; an inlet pipe in fluid communication with the inlet opening; an outlet pipe in fluid communication with the at least one outlet opening; and a valve disposed at a junction between the inlet pipe and the outlet pipe.
64. The deposition chamber according to claim 63, wherein the at least one outlet opening includes a plurality of outlet openings, each of the plurality outlet openings having a diameter less than the diameter ofthe inlet opening, each of the plurality outlet openings being in fluid communication with the outlet pipe.
65. The deposition chamber according to claim 64, wherein the body includes a rim disposed adjacent the outlet pipe, the plurality of outlet openings being located within the rim.
66. The deposition chamber according to claim 65, wherein a first portion of the plurality of outlet openings is disposed adjacent the outlet pipe and a second portion of the plurality of outlet openings is located distally from the outlet pipe, a cross-sectional flow area ofthe first portion of the plurality of outlet openings being less than a cross-sectional flow area ofthe second portion ofthe plurality of outlet openings.
67. The deposition chamber according to claim 66, further comprising a pump in fluid communication with the outlet pipe.
68. The deposition chamber according to claim 67, wherein the pump is in fluid communication with the inlet pipe when the valve is in an open position.
69. The deposition chamber according to claim 68, further comprising a filter disposed between the inlet pipe and the outlet pipe such that a fluid flowing between the inlet pipe and the Outlet pipe can pass through the filter.
70. The deposition chamber according to claim 69, further comprising first and second annular rings secured to inner walls of the body, the filter being disposed between the first and second annular rings.
71. The deposition chamber according to claim 70, further comprising a pump in fluid communication with the outlet pipe.
72. The deposition chamber according to claim 71 , wherein the pump is in fluid communication with the inlet pipe when the valve is in an open position.
73. The deposition chamber according to claim 72, further comprising a pump which is in fluid communication with the inlet pipe when the valve is in an open position.
74. The deposition chamber according to claim 73, wherein a first portion ofthe plurality of outlet openings is disposed adjacent the outlet pipe and a second portion ofthe plurality of outlet openings is located distally from the outlet pipe, a cross-sectional flow area ofthe first portion of the plurality of outlet openings being less than a cross-sectional flow area ofthe second portion of the plurality of outlet openings.
75. The deposition chamber according to claim 74, further comprising a filter disposed between the inlet pipe and the outlet pipe such that a fluid flowing between the inlet pipe and the outlet pipe can pass through the filter.
76. The deposition chamber according to claim 75, further comprising first and second annular rings secured to inner walls ofthe body, the filter being disposed between the first and second annular rings.
77. The deposition chamber according to claim 76, wherein the body has a tapered cross- section.
78. A vacuum chamber system, comprising: a vaporization chamber having an outlet; a pyrolysis chamber having an inlet and an outlet, the inlet ofthe pyrolysis chamber being in fluid communication with the outlet ofthe vaporization chamber; and a deposition chamber, comprising: a body including an inlet opening having a diameter and at least one outlet opening having a diameter, the diameter of the inlet opening being greater than the diameter of the at least one outlet opening, the inlet opening being in fluid communication with the outlet of the pyrolysis chamber; an inlet pipe in fluid communication with the inlet opening; an outlet pipe in fluid communication with the outlet opening; and a valve disposed at a junction ofthe inlet pipe and the outlet pipe.
79. The deposition chamber according to claim 78, wherein the at least one outlet opening includes a plurality of outlet openings, each of the plurality outlet openings having a diameter less than the diameter ofthe inlet opening, each of the plurality outlet openings being in fluid communication with the outlet pipe.
80. The deposition chamber according to claim 79, wherein the body includes a rim disposed adjacent the outlet pipe, the plurality of outlet openings being located within the rim.
81. The deposition chamber according to claim 80, wherein a first portion ofthe plurality of outlet openings is disposed adjacent the outlet pipe and a second portion ofthe plurality of outlet openings is located distally from the outlet pipe, a cross-sectional flow area ofthe first portion of the plurality of outlet openings being less than a cross-sectional flow area ofthe second portion ofthe plurality of outlet openings.
82. The deposition chamber according to claim 81 , further comprising a pump in fluid communication with the outlet pipe.
83. The deposition chamber according to claim 82, wherein the pump is in fluid communication with the inlet pipe when the valve is in an open position.
84. The deposition chamber according to claim 83, further comprising a filter disposed between the inlet pipe and the outlet pipe such that a fluid flowing between the inlet pipe and the outlet pipe can pass through the filter.
85. The deposition chamber according to claim 84, further comprising first and second annular rings secured to inner walls ofthe body, the filter being disposed between the first and second annular rings.
86. The deposition chamber according to claim 78, further comprising a pump in fluid communication with the outlet pipe.
87. The deposition chamber according to claim 86, wherein the pump is in fluid communication with the inlet pipe when the valve is in an open position.
88. The deposition chamber according to claim 78, further comprising a pump which is in fluid communication with the inlet pipe when the valve is in an open position.
89. The deposition chamber according to claim 79, wherein a first portion of the plurality of outlet openings is disposed adjacent the outlet pipe and a second portion of the plurality of outlet openings is located distally from the outlet pipe, a cross-sectional flow area ofthe first portion of the plurality of outlet openings being less than a cross-sectional flow area ofthe second portion ofthe plurality of outlet openings.
90. The deposition chamber according to claim 78, further comprising a filter disposed between the inlet pipe and the outlet pipe such that a fluid flowing between the inlet pipe and the outlet pipe can pass through the filter.
91. The deposition chamber according to claim 90, further comprising first and second annular rings secured to inner walls ofthe body, the filter being disposed between the first and second annular rings.
92. The deposition chamber according to claim 86, wherein the body has a tapered cross- section.
93. A deposition apparatus, comprising: a vaporization chamber having an outlet; a pyrolysis chamber having an inlet and an outlet, the inlet of the pyrolysis chamber being in fluid communication with the outlet ofthe vaporization chamber; a deposition chamber having an inlet in fluid communication with the outlet ofthe pyrolysis chamber, a portion ofthe deposition chamber being capable of housing a substrate; and a filter disposed within the deposition chamber such that a fluid flowing from the pyrolysis chamber to the portion ofthe deposition chamber capable of housing the substrate can pass through the filter.
94. The deposition apparatus according to claim 93, wherein the filter is formed from a fluoropolymer.
95. The deposition apparatus according to claim 94, wherein the fluoropolymer is PTFE.
96. The deposition apparatus according to claim 95, wherein the deposition chamber comprises: a body including an inlet opening having a diameter in at least one outlet having a diameter, the diameter ofthe inlet opening being greater than the diameter ofthe at least one outlet opening.
97. The deposition apparatus according to claim 96, further comprising first and second annular rings secured to inner walls ofthe body, the filter being disposed between the first and second annular rings.
98. The deposition apparatus according to claim 97, further comprising: an inlet pipe in fluid communication with the inlet opening; an outlet pipe in fluid communication with the at least one outlet opening; and a valve disposed at a junction between the inlet pipe and the outlet pipe.
99. The deposition apparatus according to claim 98, wherein the at least one outlet opening includes a plurality of outlet openings, each ofthe outlet openings having a diameter less than the diameter ofthe inlet opening, each ofthe outlet openings being in fluid communication with the outlet pipe.
100. The deposition apparatus according to claim 98, wherein the body includes a rim disposed adjacent the outlet pipe, the plurality of outlet openings being disposed within the rim.
101. The deposition apparatus according to claim 100, wherein a first portion ofthe plurality of outlet openings is disposed adjacent the outlet pipe and a second portion ofthe plurality of outlet openings is located distally from the outlet pipe, a cross-sectional flow area ofthe first portion ofthe plurality of outlet openings being less than a cross-sectional flow area ofthe second portion of the plurality of the outlet openings.
102. The deposition apparatus according to claim 101, further comprising a pump in fluid communication with the outlet pipe.
103. The deposition apparatus according to claim 102, wherein the pump is in fluid communication with the inlet pipe when the valve is in an open position.
104. The deposition apparatus according to claim 103 further comprising a filter disposed between the inlet pipe and the outlet pipe such that a fluid flowing from the inlet pipe to the outlet pipe can pass through the filter.
105. An apparatus, comprising: a vaporization chamber; a pyrolysis chamber in fluid communication with the vaporization chamber; a deposition chamber in fluid communication with the pyrolysis chamber; a thermally conductive platen disposed within the deposition chamber; and a device for reducing a temperature of the thermally conductive platen.
AMENDED SHEET (ARTICLE 1?)
106. The apparatus according to claim 105, further comprising a post-pyrolysis chamber in fluid communication with the pyrolysis and deposition chambers.
107. The apparatus according to claim 106, further comprising a heater for heating the platen.
108. The apparatus according to claim 107, wherein the heater includes at least one heating element inserted into at least one opening ofthe platen.
109. The apparatus according to claim 107, further comprising a clamp capable of placing a substrate in intimate contact with the thermally conductive platen.
1 10. The apparatus according to claim 109, wherein the claim is an electrostatic clamp.
1 11. The apparatus according to claim 110, wherein the deposition chamber includes an inlet opening having a diameter and at least one outlet opening having a diameter, the diameter ofthe inlet opening being greater than the diameter ofthe least one outlet opening, and wherein the deposition chamber further comprises: an inlet pipe in fluid communication with the inlet opening; an outlet pipe in fluid communication with the at least one outlet opening; and a valve disposed at a junction between the inlet pipe and the outlet pipe.
112. The apparatus according to claim 11 1, wherein the at least one outlet opening includes a plurality of outlet openings, each ofthe plurality of outlet openings having a diameter less than the diameter of the inlet opening, each of the plurality of outlet openings being in fluid communication with the outlet pipe.
113. The device according to claim 105, further comprising a heater for heating the platen.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP96936895A EP0862664B1 (en) | 1995-10-27 | 1996-10-25 | Method and apparatus for the deposition of parylene af4 onto semiconductor wafers |
| DE69625615T DE69625615T2 (en) | 1995-10-27 | 1996-10-25 | METHOD AND DEVICE FOR DEPOSITING PARYLENE AF4 ON SEMICONDUCTOR WAFERS |
| AT96936895T ATE230445T1 (en) | 1995-10-27 | 1996-10-25 | METHOD AND DEVICE FOR DEPOSING PARYLENE AF4 ON SEMICONDUCTOR WAFERS |
| JP51675197A JP3808102B2 (en) | 1995-10-27 | 1996-10-25 | Deposition method of Parylene AF4 on a semiconductor wafer |
Applications Claiming Priority (28)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/549,395 US5709753A (en) | 1995-10-27 | 1995-10-27 | Parylene deposition apparatus including a heated and cooled dimer crucible |
| US08/549,087 US5538758A (en) | 1995-10-27 | 1995-10-27 | Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers |
| US08/549,169 | 1995-10-27 | ||
| US08/549,130 US5556473A (en) | 1995-10-27 | 1995-10-27 | Parylene deposition apparatus including dry vacuum pump system and downstream cold trap |
| US08/549,093 US5536319A (en) | 1995-10-27 | 1995-10-27 | Parylene deposition apparatus including an atmospheric shroud and inert gas source |
| US08/549,087 | 1995-10-27 | ||
| US08/549,169 US5534068A (en) | 1995-10-27 | 1995-10-27 | Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement |
| US08/549,133 | 1995-10-27 | ||
| US08/549,130 | 1995-10-27 | ||
| US08/549,131 | 1995-10-27 | ||
| US08/549,395 | 1995-10-27 | ||
| US08/549,093 | 1995-10-27 | ||
| US08/549,131 US5536321A (en) | 1995-10-27 | 1995-10-27 | Parylene deposition apparatus including a post-pyrolysis filtering chamber and a deposition chamber inlet filter |
| US08/549,635 US5536322A (en) | 1995-10-27 | 1995-10-27 | Parylene deposition apparatus including a heated and cooled support platen and an electrostatic clamping device |
| US08/549,635 | 1995-10-27 | ||
| US08/549,133 US5536317A (en) | 1995-10-27 | 1995-10-27 | Parylene deposition apparatus including a quartz crystal thickness/rate controller |
| US68000596A | 1996-07-15 | 1996-07-15 | |
| US68016196A | 1996-07-15 | 1996-07-15 | |
| US68357796A | 1996-07-15 | 1996-07-15 | |
| US67982796A | 1996-07-15 | 1996-07-15 | |
| US67995696A | 1996-07-15 | 1996-07-15 | |
| US67995896A | 1996-07-15 | 1996-07-15 | |
| US08/679,958 | 1996-07-15 | ||
| US08/683,577 | 1996-07-15 | ||
| US08/679,956 | 1996-07-15 | ||
| US08/680,005 | 1996-07-15 | ||
| US08/680,161 | 1996-07-15 | ||
| US08/679,827 | 1996-07-15 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| WO1997015699A2 WO1997015699A2 (en) | 1997-05-01 |
| WO1997015699A3 WO1997015699A3 (en) | 1997-09-12 |
| WO1997015699B1 true WO1997015699B1 (en) | 1997-11-06 |
Family
ID=27585116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1996/017003 WO1997015699A2 (en) | 1995-10-27 | 1996-10-25 | Method and apparatus for the deposition of parylene af4 onto semiconductor wafers |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0862664B1 (en) |
| JP (1) | JP3808102B2 (en) |
| AT (1) | ATE230445T1 (en) |
| WO (1) | WO1997015699A2 (en) |
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| RU2461429C2 (en) * | 2010-09-03 | 2012-09-20 | Российская Федерация, от имени которой выступает Министерство образования и науки РФ (Минобрнаука РФ) | Method of producing films of parylen and its derivatives |
| US8816371B2 (en) * | 2011-11-30 | 2014-08-26 | Micron Technology, Inc. | Coated color-converting particles and associated devices, systems, and methods |
| US10887371B2 (en) | 2015-09-14 | 2021-01-05 | Google Llc | Systems and methods for content storage and retrieval |
| US11933942B2 (en) * | 2019-03-25 | 2024-03-19 | Applied Materials, Inc. | Non-line-of-sight deposition of coating on internal components of assembled device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB650947A (en) * | 1947-09-19 | 1951-03-07 | Michael Mojzesz Szwarc | The production of new polymers |
| US3246627A (en) * | 1962-10-05 | 1966-04-19 | Union Carbide Corp | Apparatus for vapor deposition |
| US3301707A (en) * | 1962-12-27 | 1967-01-31 | Union Carbide Corp | Thin film resistors and methods of making thereof |
| US3749601A (en) * | 1971-04-01 | 1973-07-31 | Hughes Aircraft Co | Encapsulated packaged electronic assembly |
| US4110392A (en) * | 1976-12-17 | 1978-08-29 | W. L. Gore & Associates, Inc. | Production of porous sintered PTFE products |
| US4184188A (en) * | 1978-01-16 | 1980-01-15 | Veeco Instruments Inc. | Substrate clamping technique in IC fabrication processes |
| CA1187622A (en) * | 1981-03-11 | 1985-05-21 | Zoltan J. Kiss | Semiconductor device having a body of amorphous silicon |
| EP0102417A1 (en) * | 1982-08-24 | 1984-03-14 | New-Come Filters Limited | A gas filter device |
| US4577465A (en) * | 1984-05-11 | 1986-03-25 | Helix Technology Corporation | Oil free vacuum system |
| DE3780511T2 (en) * | 1986-05-23 | 1993-03-04 | Gore & Ass | HIGH PERFORMANCE GAS FILTER. |
| US4761269A (en) * | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
| US4990374A (en) * | 1989-11-28 | 1991-02-05 | Cvd Incorporated | Selective area chemical vapor deposition |
| US5112642A (en) * | 1990-03-30 | 1992-05-12 | Leybold Inficon, Inc. | Measuring and controlling deposition on a piezoelectric monitor crystal |
| US5268202A (en) * | 1992-10-09 | 1993-12-07 | Rensselaer Polytechnic Institute | Vapor deposition of parylene-F using 1,4-bis (trifluoromethyl) benzene |
| JP3319055B2 (en) * | 1993-08-06 | 2002-08-26 | 日新電機株式会社 | Quartz crystal type radical beam monitor |
| CA2147813A1 (en) * | 1994-04-28 | 1995-10-29 | Richard Dixon | Intravascular prosthesis with anti-thrombogenic coating |
| US5534068A (en) * | 1995-10-27 | 1996-07-09 | Specialty Coating Systems, Inc. | Parylene deposition apparatus including a tapered deposition chamber and dual vacuum outlet pumping arrangement |
-
1996
- 1996-10-25 WO PCT/US1996/017003 patent/WO1997015699A2/en active IP Right Grant
- 1996-10-25 EP EP96936895A patent/EP0862664B1/en not_active Expired - Lifetime
- 1996-10-25 AT AT96936895T patent/ATE230445T1/en not_active IP Right Cessation
- 1996-10-25 JP JP51675197A patent/JP3808102B2/en not_active Expired - Fee Related
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