CN215925068U - Nozzle holder for substrate processing apparatus and nozzle assembly for substrate processing apparatus - Google Patents

Nozzle holder for substrate processing apparatus and nozzle assembly for substrate processing apparatus Download PDF

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Publication number
CN215925068U
CN215925068U CN202122296429.8U CN202122296429U CN215925068U CN 215925068 U CN215925068 U CN 215925068U CN 202122296429 U CN202122296429 U CN 202122296429U CN 215925068 U CN215925068 U CN 215925068U
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Prior art keywords
nozzle
processing apparatus
substrate processing
nozzle holder
tube
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CN202122296429.8U
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Chinese (zh)
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岛田宽哲
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Kokusai Electric Corp
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Kokusai Electric Corp
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Abstract

The utility model provides a nozzle holder and a nozzle assembly for a substrate processing apparatus, the nozzle holder includes: a substantially rectangular plate-shaped flange portion; a cylindrical portion vertically connected to an upper surface of the flange portion and having an inner diameter into which an attachment portion of a nozzle can be inserted; and an opening provided on a side surface of the cylindrical portion and on a side of the flange portion in the longitudinal direction, and to which a locking member that engages with the nozzle is attached.

Description

Nozzle holder for substrate processing apparatus and nozzle assembly for substrate processing apparatus
Technical Field
The present disclosure relates to a nozzle holder for a substrate processing apparatus and a nozzle assembly for a substrate processing apparatus.
Background
In a manufacturing process of a semiconductor device (device), a substrate is processed at a predetermined temperature and in an atmosphere by using a substrate processing apparatus, and a thin film is formed or modified. For example, in a vertical substrate processing apparatus, a predetermined number of substrates are aligned in a vertical direction and held by a substrate holder, the substrate holder is loaded into a processing chamber, and a process gas is introduced into the processing chamber while the substrates are heated by a heating furnace provided around the processing chamber, thereby performing a film formation process or the like on the substrates.
In LP-CVD, which is one of typical film formation methods, a process chamber is depressurized by a vacuum pump,and when the film formation is finished, introducing N2Gas, etc., to restore atmospheric pressure (this will be referred to as venting). In ventilation, in order to prevent the rolling up of particles, an interruption filter (also referred to as a nozzle) provided in the processing chamber is often used. The cutoff filter removes particles from the introduced gas, and stably discharges the gas from a surface larger than the cross section of the gas supply pipe.
Documents of the prior art
Patent document
Patent document 1: international publication No. 2006/049055
Patent document 2: japanese laid-open patent publication No. 2002-373890
SUMMERY OF THE UTILITY MODEL
Problem to be solved by utility model
When the interruption filter is provided in the processing chamber of the vertical substrate processing apparatus, the temperature may be lowered depending on the place where the interruption filter is provided, and the by-product may adhere to the interruption filter. N supplied from the cut-off filter in order not to wind up attached particles at the time of ventilation2The flow of gas is restricted and atmospheric recovery takes time.
In addition, in order to prevent adhesion of by-products, a method of always performing cleaning from the interrupt filter is also conceivable, but N is used in the film formation2The gas diffuses into the reaction chamber, and variations occur in film thickness among wafers.
The present disclosure provides a technique that can easily install an interruption filter in the middle of the flow of gas from the gas supply mechanism to the gas discharge mechanism in the reaction tube and is provided downstream of the substrate, thereby shortening the time of ventilation using the interruption filter, receiving heat from exhaust gas, maintaining a high temperature, and suppressing the deposition of by-products.
Means for solving the problems
The present invention in claim 1 provides a nozzle holder for a substrate processing apparatus, comprising: a substantially rectangular plate-shaped flange portion; a cylindrical portion vertically connected to an upper surface of the flange portion and having an inner diameter into which an attachment portion of a nozzle can be inserted; and an opening provided on a side surface of the cylindrical portion and on a side of the flange portion in the longitudinal direction, and to which a locking member that engages with the nozzle is attached.
The nozzle holder according to claim 2 to claim 1, wherein the flange has a width and a length that can be arranged between an inner tube and an outer tube of a reaction tube constituting the processing container.
The nozzle holder for a substrate processing apparatus according to claim 1, wherein the flange portion is connected to the cylindrical portion at a center thereof and has screw holes for fixing to the nozzle base at both sides thereof.
The nozzle holder for a substrate processing apparatus according to claim 1, wherein the flange portion has a through hole on a surface opposite to a surface connected to the cylindrical portion, and a vent pipe having an outer diameter corresponding to an inner diameter of the nozzle mounting portion is provided inside the cylindrical portion, and one end of the vent pipe is in fluid communication with the nozzle mounting portion and the other end of the vent pipe is in fluid communication with the through hole.
The nozzle holder for a substrate processing apparatus according to claim 5 to claim 4, wherein the flange portion has an annular protrusion fitted to the nozzle base outside the through hole.
The nozzle holder according to claim 6 or 5, wherein the flange has a width and a length that can be disposed between an inner tube and an outer tube of a reaction tube constituting the processing container.
The utility model according to claim 7 provides a nozzle module for a substrate processing apparatus, comprising a nozzle holder, a nozzle attached to the nozzle holder, and a nozzle base configured to be attachable to and detachable from the nozzle holder and to support the nozzle holder, wherein the nozzle holder comprises: a substantially rectangular plate-shaped flange portion; a cylindrical portion vertically connected to an upper surface of the flange portion and having an inner diameter corresponding to an outer diameter of the mounting portion of the nozzle; and an opening provided on a side surface of the cylindrical portion and on a side of the flange portion in the longitudinal direction, and to which a locking member that engages with the nozzle is attached.
The nozzle unit according to claim 8 or 7, wherein the nozzle base has a rectangular block-like outer shape, is fixed to a manifold connected to a lower end opening of the reaction tube, and fluidly connects a gas introduction tube provided in the manifold to the nozzle holder.
The nozzle assembly according to claim 9 or 8, wherein the nozzle base is fixed to the manifold below an exhaust port of the outer tube of the reaction tube.
The nozzle assembly according to claim 9, wherein the inner tube of the reaction tube has a sub-exhaust port provided to face the exhaust port of the outer tube of the reaction tube, and the nozzle has a length that can move from an inner side of the inner tube provided in the outer tube of the reaction tube to an installation position of the nozzle through the sub-exhaust port in a state of being mounted on the nozzle holder.
Effect of the utility model
According to the present disclosure, it is possible to conveniently install the interrupt filter at a proper position.
Drawings
Fig. 1 is a conceptual diagram of a substrate processing apparatus.
Fig. 2 is a vertical sectional view showing the substrate processing apparatus according to the present embodiment.
FIG. 3 is a cross-sectional view showing the reaction tube 4 of the substrate processing apparatus according to the present embodiment.
Fig. 4 is a perspective view of the nozzle holder.
Fig. 5 is a front view of the nozzle holder.
Fig. 6 is a bottom view of the nozzle holder.
Fig. 7 is a plan view showing a state where the nozzle is attached to the nozzle holder.
Detailed Description
Fig. 1 shows a concept of a substrate processing apparatus according to an aspect of the present disclosure. The nozzle functioning as the interrupt filter is disposed on the exhaust side of the reaction chamber (processing chamber). Since the high-temperature exhaust gas heated in the reaction tube is heated, the temperature is highAdhesion of by-products to the cut-off filter can be suppressed. Further, since the portion is located relatively below and downstream of the substrate in the flow of the process gas, the purge gas hardly diffuses toward the substrate even if a small amount of purge gas flows from the interruption filter. Therefore, N can be always performed for the interrupt filter2And (4) cleaning to further inhibit adhesion of by-products. Further, since the periphery where the cutoff filter is provided is at a high temperature, adhesion of by-products is small, and rolling up of particles can be suppressed even if ventilation is performed at a large flow rate. Further, in order to prevent the gas passing through the space between the reaction chamber and the APC valve from flowing back into the reaction chamber, it is more effective if the APC valve is maintained at a slight opening degree, or if a flow dividing passage is provided between the reaction chamber and the APC valve by a flow dividing pipe and a minute flow rate is maintained.
Hereinafter, a substrate processing apparatus according to an embodiment will be described with reference to the drawings. The drawings used in the following description are schematic drawings, and the relationship between the sizes of the elements and the ratios of the elements shown in the drawings do not necessarily coincide with reality. Further, the relationship of the sizes of the respective elements, the ratios of the respective elements, and the like are not necessarily consistent between the plurality of drawings.
[ Structure of substrate processing apparatus ]
As shown in fig. 2, in the present embodiment, the substrate processing apparatus 1 is configured as a vertical heat processing apparatus (batch type vertical furnace apparatus) that performs a heat processing step in a method for manufacturing an integrated circuit.
The processing furnace 202 includes a heater 3 as a furnace body (hereinafter referred to as a heater) serving as a first heating means (heating means). The heater 3 is cylindrical in shape and is installed vertically. The heater 3 heats the inside thereof, and also functions as an activation mechanism (excitation portion) that activates (excites) the gas by heat as described later.
A reaction tube 4 constituting a vacuum vessel (processing vessel) is disposed inside the heater 3. The reaction tube 4 is made of, for example, quartz (SiO)2) And the like heat-resistant material. The reaction tube 4 has a double-walled structure, the outer wall constituting an outer tube 401 and the inner wall constituting an inner tube 402. Outer tube 401 and inner tube 402 shapesThe manifold (inlet) 5 is formed in a cylindrical shape with a closed upper end and an open lower end, and is connected to the manifold via an O-ring 19A and an O-ring 19C, respectively. The manifold 5 is formed in a cylindrical shape having flanges at both ends and inside, is disposed coaxially with the reaction tube 4, and can support the outer tube 401 and the inner tube 402 of the reaction tube 4, respectively.
The cylindrical hollow portion of the inner tube 402 forms the processing chamber 6. The processing chamber 6 is configured to be able to accommodate wafers 200 as substrates in a state where a plurality of layers are arranged in a vertical direction in a horizontal posture by a boat 217 described later. The space in which the wafers 200 held by the boat 217 are accommodated is referred to as a process area, and the space below the process area is referred to as an insulating area. The temperature in the treatment region of the hot wall type reaction tube 4 is uniform.
Between the outer tube 401 and the inner tube 402 of the reaction tube 4, a supply buffer 7A and an exhaust buffer 7B are partitioned by a pair of partition plates 71A. The supply buffer 7A and the exhaust buffer 7B are also formed to extend in the height direction so as to face at least the entire process area. The part of the cylinder of the inner tube 402 of the reaction tube 4 covered by the supply buffer 7A and the exhaust buffer 7B constitutes an inner tube buffer portion 402A and an inner tube buffer portion 402B, respectively. The outer tube damper portion 401A and the outer tube damper portion 401B are formed by a part of the cylinder of the outer tube 401 of the reaction tube 4 covered with the supply damper 7A and the exhaust damper 7B, respectively. The gas supply space inside the supply buffer 7A is partitioned by the inner tube buffer portion 402A, the outer tube buffer portion 401A, and the partition plate 71A. On the other hand, the lower end of the exhaust buffer 7B is closed by the manifold 5, an exhaust port 4D is provided near the lower end of the outer tube 401, and the exhaust buffer 7B communicates with the outside through the exhaust port 4D.
A plurality of gas supply ports 4F having a horizontally long slit shape are provided in the inner tube buffer portion 402A at the same interval as the interval of the wafers 200 so as to correspond to the surface of the wafer 200 in the processing area, and the gas supply ports 4F fluidly connect the processing chamber 6 and the gas supply space inside the supply buffer 7A.
A plurality of gas outlets 4E (first gas outlets) having a horizontally long slit shape are provided in the inner tube buffer portion 402B at the same interval as the interval of the wafers 200 so as to correspond to the wafers 200 in the processing area, and the gas outlets 4E fluidly communicate the processing chamber 6 with the gas outlet space inside the gas buffer 7B. The gas discharge port 4E is formed of a plurality of rows of openings having substantially the same width as the gas buffer 7B, and is provided at a position overlapping the processing region in the height direction. The gas discharge port 4E is provided at a position corresponding to the gas supply port 4F (a position facing the process field, that is, a position facing the process field).
A sub-exhaust port 4G as a second exhaust portion (second exhaust port) is formed below the gas exhaust port 4E of the inner tube damper portion 402B. The sub-exhaust port 4G is formed at a position within the heat insulating region or at a position facing the heat insulating portion. The sub-exhaust port 4G is formed in a horizontally long rectangular shape, and has an opening area larger than the opening area of one slit of the gas exhaust port 4E and smaller than the total opening area of the gas exhaust port 4E. The gas exhaust port 4E and the sub-exhaust port 4G are formed to communicate the processing chamber 6 with the exhaust buffer, and exhaust the atmosphere in the processing region and the heat insulating region in the processing chamber 6, respectively. By providing the sub-exhaust port 4G in the heat insulating region, the shaft purge gas (described later) flowing around the heat insulating portion 22 can be suppressed from diffusing into the processing region. The reaction tube 4 of this example may be entirely made of transparent quartz except for the exhaust port 4D. Here, the transparent quartz means quartz which is not subjected to processing for scattering light such as sandblasting, microcracking, or bubbling.
Nozzles 8a, 8b, and 8c made of a heat-resistant material such as quartz are provided in the gas supply space. A gas supply pipe 9a is connected to the lower end of the nozzle 8 a. A Mass Flow Controller (MFC)10a as a flow rate controller (flow rate control unit) and a valve 11a as an on-off valve are provided in this order from the upstream side in the gas supply pipe 9 a. A gas supply pipe 12a for supplying an inert gas is connected to the gas supply pipe 9a on the downstream side of the valve 11 a. The gas supply pipe 12a is provided with an MFC13a and a valve 14a in this order from the upstream direction. The nozzles 8b and 8c are also provided with the same process gas supply system and inert gas supply system. Hereinafter, the nozzles 8a, 8b, and 8c are collectively referred to as the nozzles 8.
The process gas supply system is mainly constituted by the gas supply pipe 9a, the MFC10a, and the valve 11a, and the inert gas supply system is constituted by the gas supply pipe 12a, the MFC13a, and the valve 14 a. In addition, it is also possible to include an inert gas supply system in the process gas supply system. The nozzles 8a and 8b, the gas supply port 4F, and the supply buffer 7A constitute a gas supply mechanism. It is also conceivable to include the process gas supply system and the inert gas supply system in the gas supply mechanism.
The nozzles 8 are provided along the arrangement of the wafers 200 in the gas supply space from the lower portion of the reaction tube 4 upward. At this time, the nozzle 8 is parallel to the arrangement direction of the wafers 200 at the side of the wafers 200. The nozzle 8 of this embodiment has a plurality of gas discharge holes 8H formed in the side surface thereof so as to supply gas over the entire process field. The gas discharge holes 8H may be opened at the same interval as the arrangement interval of the wafers 200 and toward the center of the reaction tube 4. Thus, the gas can be supplied to each wafer 200 through a straight path passing through the gas supply port 4F from the gas discharge hole 8H.
The exhaust port 4D is an opening for communicating the inside and outside of the reaction tube 4, and an exhaust pipe 15 for exhausting the atmosphere in the processing chamber 6 is connected thereto. A vacuum pump 18 as a vacuum exhaust device is connected to the exhaust pipe 15 via a vacuum gauge 16 as a Pressure detector (Pressure detector) for detecting the Pressure in the process chamber 6 and an apc (auto Pressure controller) valve 17 as an on-off valve, and these are collectively referred to as an exhaust system. The exhaust pipe 15 may be heated by a heater, not shown, in order to prevent the components of the exhaust gas from solidifying.
The APC valve 17 is controlled in opening degree by the controller 29, is configured to be capable of performing vacuum evacuation and vacuum evacuation stop in the processing chamber 6 by opening and closing the valve in a state where the vacuum pump 18 is operated, and is configured to be capable of maintaining the pressure in the processing chamber 6 at a target value by continuously adjusting the valve opening degree based on pressure information detected by the vacuum gauge 16 in a state where the vacuum pump 18 is operated (constant pressure control). The gas discharge mechanism is constituted by a gas discharge port 4E, a sub-exhaust port 4G, an exhaust buffer 7B, an exhaust port 4D, an exhaust system, and a sub-exhaust valve 37 described later.
A lid 19 as a furnace opening lid body abuts on the lower end of the manifold 5 from the vertically lower side, and hermetically closes the lower end opening of the manifold 5. The cover 19 is formed of metal into a disk shape. An O-ring 19B as a sealing member is provided on the upper surface of the cap 19 to abut against the lower end of the manifold 5. Further, a seal cover plate 20 for covering and protecting the cap 19 is provided on the upper surface of the cap 19 in a region inside the O-ring 19B.
A heat insulating part 22 is provided between the boat 217 and the lid 19. The heat insulating portion 22 is formed in a cylindrical shape, for example, or is configured by vertically arranging a plurality of disk-shaped heat insulating plates. In the heat insulating portion 22 of this example, almost all of the portion above the flange portion 4C may be made of transparent quartz, a semiconductor wafer transparent to far infrared rays, or the like.
The rotation mechanism 23 is provided outside the cover 19 in an airtight manner, and rotatably supports the heat insulating part 22 by a rotation shaft 23A penetrating the cover 19. The rotating shaft 23A is sealed by a magnetic fluid. A gas supply pipe 24 is connected to the rotation mechanism 23, and the gas supply pipe 24 mainly supplies shaft purge gas for protecting the seal. The gas supply pipe 24 is provided with an MFC25 and a valve 26 in this order from the upstream side. The gas supply pipe 24, the MFC25, and the valve 26 mainly constitute a purge gas supply unit as a purge gas supply system. The purge gas supply unit is configured to supply the shaft purge gas from a position below the heat insulating region toward an upper side. For example, the shaft purge gas flows between the heat insulator 22 and the seal cover 20, the inner periphery of the manifold 5, and the outer periphery of the heat insulator 22 after passing through the cover 19, and is discharged from the sub-exhaust port 4G.
The processing chamber 6 is provided with a temperature detection unit (not shown). The temperature detection unit may be formed of a plurality of thermocouples arranged in parallel in the vertical direction. The temperature in the processing chamber 6 is adjusted to a desired temperature distribution by adjusting the energization state of the heater 3 based on the temperature information detected by the temperature detecting unit.
The controller 29 is a computer that controls the entire substrate processing apparatus 101, and is electrically connected to the MFCs 10a to 10c, 13a to 13c, 25 and 33, the valves 11a to 11c, 14a to 14c, 26 and 34, the vacuum gauge 16, the APC valve 17, the sub-exhaust valve 37, the vacuum pump 18, the heater 3, the rotation mechanism 23, the boat elevator 115, and the temperature detection unit, and receives signals therefrom to control them.
FIG. 3 shows a cross-sectional view of the reaction tube 4. The supply buffer 7A of the reaction tube 4 is divided into three nozzle chambers by partition plates 71B, and the nozzles 8a to 8c are provided in the respective nozzle chambers. The circumferential width of the nozzle chamber may be designed such that the volume of the nozzle chamber is the minimum volume required for safe arrangement of several nozzles. The lower end of the partition plate 71B extends below the treatment region. The exhaust buffer 7B may be divided into three spaces by partition plates in the same manner. In this case, the lower end of the partition plate extends below the process field but does not reach the upper end of the sub-exhaust port 4G.
The circumferential width of the exhaust buffer 7B is set to the entire region of the outer periphery of the reaction tube 4 except for the portion occupied by the supply buffer 7A, so that a large exhaust velocity is obtained. The circumferential width of the exhaust damper 7B may be reduced as necessary. The nozzle 31 functioning as a cut-off filter is located immediately below the exhaust buffer 7B. The nozzle 31 is provided at a position farther from the central axis (an extension of the rotation axis 23A) than the radius of the wafer 200.
The side surfaces of the nozzles 8a to 8c are provided with gas discharge holes 8H that open toward the center of the reaction tube 4. The three columns of the boat 217 are located in the gaps between the inner circumferential surface of the reaction tube 4 and the wafers 200. The inner diameter of the reaction tube 4 is desirably the smallest diameter that can be safely rotated or carried in and out of the boat 217. At this time, most of the gas discharged from the nozzle 8 flows in parallel to the surface of the wafer 200 in the gap between the wafers 200 so as to traverse from the end to the end of each wafer 200. Such a reaction tube 4 is called a cross flow tube.
Referring back to fig. 2, the nozzle base 30 is fixed to the manifold 5 below the exhaust port 4D of the reaction tube 4 and between the outer tube 401 and the inner tube 402. The nozzle base 30 is in the form of a rectangular block and is in fluid communication with a gas introduction pipe 32 via the manifold 5. A nozzle support 90 is coupled in fluid communication with the nozzle base 30. The nozzle 31 is mounted to the nozzle holder 90.
The portion where the nozzle 31 is provided is located closer to the furnace center than the outer wall of the reaction tube 4 and the inner circumferential surface of the manifold 5, and is at a high temperature due to radiation heat from the heater 3 and heat transfer from the exhaust gas. The nozzle 31 is disposed at a portion that deflects the exhaust gas flowing downward toward the exhaust port 4D in the exhaust damper 7B in the horizontal direction, and the pressure is locally increased, thereby increasing the heat transfer from the exhaust gas. Further, the temperature of the upper end surface of the manifold 5 is limited to 300 ℃ or lower in order to protect the O-ring 19A, but the nozzle 31 is allowed to be higher in temperature than the manifold 5. The nozzle 31 is made of a porous material obtained by sintering and molding fine particles of alumina, silica, silicon carbide, and the like, and gas can flow between the upper surface and the lower surface thereof. The nozzle 31 absorbs radiant heat more easily than the block due to its structure, and has high heat insulation (heat storage). In the case where the reaction tube 4 has a double-tube structure including concentric inner and outer tubes, the lower ends of the inner and outer tubes may be closed by a manifold without the flange portion 4C. At this time, the nozzle holder 31 is located between the inner tube and the outer tube. .
The gas introduction pipe 32 communicates with the nozzle 31 via the manifold 5 and the nozzle base 30, and supplies N2 gas (ventilation gas) for restoring the atmosphere to the nozzle 31.
The gas introduction pipe 32 is provided with an MFC33 and a valve 34 in this order from the upstream side outside the process chamber 6. The gas inlet 32, the MFC33, and the valve 34 mainly constitute a ventilation gas supply unit for supplying N2 gas to the nozzle 31. The N2 gas to be supplied is a gas having a sufficiently low concentration of oxygen and water vapor, and it is desirable that the oxygen concentration is 10ppm or less, for example.
The sub-exhaust valve 37 is provided in parallel with the APC valve 17, and constitutes a thin openable exhaust path bypassing the APC valve 17. The conductance of the exhaust path is designed so that a flow rate substantially equal to or greater than the flow rate of the vent gas (and the shaft purge gas) flows when the APC valve is fully closed during the film formation process. Thus, the inflow of these gases into the processing region can be suppressed. In addition, when the lower limit of the opening degree of the APC valve can be appropriately set in the film formation process, the sub-exhaust valve 37 is not required.
[ Structure of nozzle holder ]
As shown in fig. 4 to 6, the nozzle holder 90 includes a substantially rectangular plate-shaped flange 901, a cylindrical portion 902 connected perpendicularly to an upper surface 901A of the flange 901 and having an inner diameter into which an attachment portion of the nozzle 31 can be inserted, and an opening 903 provided on a side surface of the cylindrical portion 902 and on a longitudinal side of the flange 901. When the nozzle 31 is inserted into the cylindrical portion 902 of the nozzle holder 90, a half-moon-shaped quartz locking member 905 is attached to the opening 903, and the nozzle 31 is fixed by pressing the locking member 905 from the opening 903 side.
The cylindrical portion 902 is connected to the center of the flange 901, and has screw holes 9011 for fixing to the nozzle base 30 on both sides of the flange 901.
The lower surface 901B of the flange 901 has a through hole 9012, one end of a ventilation pipe 9022 having an outer diameter corresponding to the inner diameter of the attachment portion of the nozzle 31 and located inside the cylindrical portion 902 is connected to the through hole 9012, and the other end of the ventilation pipe 9022 and the nozzle 31 are connected.
The flange 901 has an annular projection 9013 on the outside of the through hole 9012, and when the nozzle holder 90 is attached to the nozzle base 30, the projection 9013 is fitted into the connecting hole of the nozzle base 30.
The nozzle 31 has a length that can be moved from the inside of the inner tube 402 to the installation position of the nozzle 31 through the sub-exhaust port 4G in a state of being attached to the nozzle holder 90.
As shown in fig. 7, when the nozzle 31 is fixed by the locking member 905, the locking member 905 is provided with a groove 9051 for hooking, one end of the C-shaped plate spring 906 is bent radially inward, the bent portion is hooked to the groove 9051, and the other end is bent radially outward, so that the operator can perform a pushing and pulling operation. Thus, even if the gap between the outer tube 401 and the inner tube 402 is narrow, the nozzle 31 and the nozzle holder 90 can be fixed without contacting the reaction tube 4.
The present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present disclosure. The present invention is also intended to cover modifications and variations of this invention.

Claims (10)

1. A nozzle holder for a substrate processing apparatus, comprising:
a substantially rectangular plate-shaped flange portion;
a cylindrical portion vertically connected to an upper surface of the flange portion and having an inner diameter into which an attachment portion of a nozzle can be inserted; and
and an opening provided on a side surface of the cylindrical portion and on a side of the flange portion in the longitudinal direction, and to which a locking member that engages with the nozzle is attached.
2. The nozzle holder for a substrate processing apparatus according to claim 1,
the flange has a width and a length that can be disposed between an inner tube and an outer tube of a reaction tube constituting a process container.
3. The nozzle holder for a substrate processing apparatus according to claim 1,
the flange portion is connected to the cylindrical portion at the center thereof and has screw holes for fixing to the nozzle base at both sides thereof.
4. The nozzle holder for a substrate processing apparatus according to claim 1,
the flange portion has a through hole on a surface opposite to a surface connected to the cylindrical portion,
the cylindrical portion has a vent pipe inside, the vent pipe having an outer diameter corresponding to an inner diameter of the mounting portion of the nozzle, and having one end in fluid communication with the mounting portion of the nozzle and the other end in fluid communication with the through hole.
5. The nozzle holder for a substrate processing apparatus according to claim 4,
the flange portion has an annular projection fitted to the nozzle base outside the through hole.
6. The nozzle holder for a substrate processing apparatus according to claim 5,
the flange has a width and a length that can be disposed between an inner tube and an outer tube of a reaction tube constituting a process container.
7. A nozzle assembly for a substrate processing apparatus, comprising a nozzle body,
comprises a nozzle holder, a nozzle mounted on the nozzle holder, and a nozzle base configured to be detachable from the nozzle holder and to support the nozzle holder,
the nozzle holder includes:
a substantially rectangular plate-shaped flange portion;
a cylindrical portion vertically connected to an upper surface of the flange portion and having an inner diameter corresponding to an outer diameter of the mounting portion of the nozzle; and
and an opening provided on a side surface of the cylindrical portion and on a side of the flange portion in the longitudinal direction, and to which a locking member that engages with the nozzle is attached.
8. The nozzle assembly for a substrate processing apparatus according to claim 7,
the nozzle base has a rectangular block-like shape, is fixed to a manifold connected to a lower end opening of the reaction tube, and fluidly connects a gas introduction tube provided in the manifold and the nozzle holder.
9. The nozzle assembly for a substrate processing apparatus according to claim 8,
the nozzle base is fixed to the manifold below an exhaust port of the outer tube of the reaction tube.
10. The nozzle assembly for a substrate processing apparatus according to claim 9,
the inner tube of the reaction tube has an auxiliary exhaust port provided to face the exhaust port of the outer tube of the reaction tube,
the nozzle has a length that is capable of moving from the inside of the inner tube disposed inside the outer tube of the reaction tube to the position where the nozzle is disposed through the sub-exhaust port in a state of being mounted on the nozzle holder.
CN202122296429.8U 2021-09-22 2021-09-22 Nozzle holder for substrate processing apparatus and nozzle assembly for substrate processing apparatus Active CN215925068U (en)

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Application Number Priority Date Filing Date Title
CN202122296429.8U CN215925068U (en) 2021-09-22 2021-09-22 Nozzle holder for substrate processing apparatus and nozzle assembly for substrate processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202122296429.8U CN215925068U (en) 2021-09-22 2021-09-22 Nozzle holder for substrate processing apparatus and nozzle assembly for substrate processing apparatus

Publications (1)

Publication Number Publication Date
CN215925068U true CN215925068U (en) 2022-03-01

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