WO1996038262A1 - Compositions pour le polissage de tranches de silicium et procedes correspondants - Google Patents

Compositions pour le polissage de tranches de silicium et procedes correspondants Download PDF

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Publication number
WO1996038262A1
WO1996038262A1 PCT/US1996/007973 US9607973W WO9638262A1 WO 1996038262 A1 WO1996038262 A1 WO 1996038262A1 US 9607973 W US9607973 W US 9607973W WO 9638262 A1 WO9638262 A1 WO 9638262A1
Authority
WO
WIPO (PCT)
Prior art keywords
ppm
amine
slurry
composition
concentration
Prior art date
Application number
PCT/US1996/007973
Other languages
English (en)
Inventor
Scott B. Loncki
Lee Melbourne Cook
James Shen
Keith G. Pierce
Original Assignee
Rodel, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rodel, Inc. filed Critical Rodel, Inc.
Priority to AU59520/96A priority Critical patent/AU5952096A/en
Priority to EP96916757A priority patent/EP0840664B1/fr
Priority to DE69612001T priority patent/DE69612001T2/de
Publication of WO1996038262A1 publication Critical patent/WO1996038262A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching

Definitions

  • the present invention relates to compositions which are used as polishing slurries in the process of polishing silicon wafers for the semiconductor industry.
  • Silicon wafers for the semiconductor industry must possess a high degree of surface perfection before they can be useful in the device fabrication process. These surfaces are universally produced by polishing the wafer with a polishing slurry. Polishing slurries generally consist of a composition which contains a concentration of submicron particles. The part, or substrate, is bathed or rinsed in the slurry in conjunction with an elastomcric pad which is pressed against the substrate and rotated such that the slurry particles are pressed against the substrate under load. The lateral motion of the pad causes the slurry particles to move across the substrate surface, resulting in wear, or volumetric removal of the substrate surface. Ideally, this process results in the selective erosion of projecting surface features so that when the process is completed a perfect plane surface is produced down to the finest level of detail.
  • the silicon polishing process as practiced in industry consists of two or more steps. In the first, or coarse polish step, gross defects remaining from wafer sawing and shaping operations are removed. The wafer surface appears smooth and specular but still contains numerous minute defects. These defects are removed by subsequent final polish steps which remove little material from the surface but act to polish away the surface defects.
  • the present invention relates to solutions which are particularly useful for this final polish process.
  • the number and allowable size of surface imperfections remaining after polishing has been continuously decreasing with time for many years.
  • Some of the most critical material specifications are the surface metals content, the front surface microroughness and the total particles per unit area.
  • the metal ion concentration on a wafer surface may be determined by several conventional means of chemical analysis.
  • the most popular non-destructive technique used in the semiconductor industry is X-Ray Fluorescence (XRF). While there are many possible means of introducing metal ions into the wafer surface, it is generally agreed that materials and solutions which come in contact with the wafer surface should have the lowest possible metal ion contents to prevent possible contamination.
  • the measurement of surface roughness and surface defect particle concentrations on polished wafers is generally performed by a scanning light scattering detector.
  • Various models e.g. Censor ANSI 00, Tencor 6200 and Estek WIS9000, are widely used in the silicon wafer industry. All detectors utilize the same principle of operation, namely that they measure the degree of non-specular reflected light from the wafer surface.
  • a high intensity laser beam is scanned across the surface of the wafer.
  • Non-specular reflected light is collected in an off-axis detector and the signal intensity of this scattered light is analyzed.
  • Surface roughness results in a generalized light scattering of low intensity, generally termed haze. Particles or other discrete surface imperfections produce a more intense scattering which has a point source origin.
  • LPDs Light Point Defects
  • Walsh and Herzog describe polishing slurries for silicon wafers consisting of a silica sol having a size between 5-200 nm in a concentration ranging from 2-50% by weight. No criticality of pH, freedom from metal ion contaminants or other additives was taught.
  • LaChapelle (USP 3,429,080) described a polishing slurry for silicon wafers consisting of a dispersion of abrasive particles of a size below 20 microns and an oxidant, wherein the slurry pH ranged from 4.5 to 14. No criticality of pH, solids concentration, freedom from metal ion contaminants or other additives was taught.
  • Cromwell (USP 3,807,979) described a polishing slurry for silicon wafers comprising a quaternary ammonium silicate and precipitated silica. None was taught as to the criticality of solids content, pH, freedom from metal ion contaminants or other solution additives.
  • Tredinninck et al (USP 3,715,842) described a polishing slurry for silicon wafers comprising an abrasive in a slurry concentration ranging from 5-80% solids and a water soluble cellulose compound. None was taught as to the criticality of solids content within this exceedingly large range, pH, freedom from metal ion contaminants or other solution additives.
  • Basi et al (USP 4,057,939) described a polishing slurry for silicon wafers comprising silica particles, sodium carbonate (as a base), an oxidizing agent, and sodium dichloroisocyanurate. None was taught as to the criticality of solids content, pH, freedom from metal ion contaminants or other solution additives.
  • Paynel (USP 4,169,337) described a polishing slurry for silicon wafers comprising SiO 2 particles and an amine having a concentration of 0.1-5% based on SiO 2 content. A wide variety of amines were disclosed including aminoethanolamine. No limits on SiO 2 concentration were taught and the amine was incorporated in concentration ranges far in excess of what would be required for pH adjustment. None was taught as to the criticality of solids content, pH, freedom from metal ion contaminants or other solution additives.
  • Payne2 (USP 4,462,188) described a polishing solution for silicon wafers comprising silica particles, a water soluble amine in concentration between 0.5-5% and a quaternary ammonium salt or hydroxide.
  • a variety of amines were disclosed, including aminoethanolamine.
  • the preferred ammonium salt or hydroxide disclosed was tetramethyl ammonium chloride or hydroxide. None was taught as to the criticality of solids content, pH, freedom from metal ion contaminants or other solution additives.
  • Prigge et al (USP 4,468,381) described a polishing slurry for silicon wafers comprising solid particles of a concentration between 1-10%, a buffer compound to control pH, an alcohol (preferably glycerols), a polar organic (preferably glycols) and a surface active substance which could include alkyl phenols, alkyl sulfonates, alkyl succinates or polyacrylates.
  • a buffer compound to control pH an alcohol (preferably glycerols), a polar organic (preferably glycols) and a surface active substance which could include alkyl phenols, alkyl sulfonates, alkyl succinates or polyacrylates.
  • an alcohol preferably glycerols
  • a polar organic preferably glycols
  • surface active substance which could include alkyl phenols, alkyl sulfonates, alkyl succinates or polyacrylates.
  • Huff (USP 4,892,612) teaches the utility of using a silica sol-amine combination in specific proportions to provide high polishing rates at low as-used solids concentration for stock polishing.
  • a lower effective solids limit for the sol- amine combination was ⁇ 1%; a solids content of 0.5% as-used gave degraded results.
  • the materials described were utilized in a stock polish process. None was taught as to their potential utility as a final polish slurry.
  • Sasaki et al (USP 5,226,930) described a polishing slurry comprising a dispersion of SiO 2 particles at a concentration between 0.1-10% by weight and with a solution pH ranging from 8-12 which was adjusted by the incorporation of an amine or ammonium hydroxide.
  • the deficiencies of the prior art are overcome by providing an aqueous composition useful as a slurry for the final polishing of silicon wafers, having a low content of alkali metals and certain transition metals.
  • the composition comprises water, submicron silica particles between 0.2 and 0.5 percent by weight of the composition, a salt at a concentration of about 100 to about 1000 ppm, an amine compound at a concentration sufficient to effect a composition pH of about 8 to about 11, and a polyelectrolyte dispersion agent at a concentration of about 20 to about 500 ppm, wherein the composition has a total sodium and potassium content below about 1 ppm, and an iron, nickel, and copper content each below about 0.1 ppm, all ppm being parts per million by weight of the composition.
  • a polishing slurry meeting these compositional limitations used for final polishing of silicon wafers has the surprising ability to produce a surface nearly free from haze and point scattering defects in a consistent manner.
  • the key elements and essential features of the invention are set forth below together with illustrative examples.
  • the key feature of the present invention is to provide a specific set of chemical ingredients in combination together with a specific and very low concentration of solid particles.
  • the various components used separately or in combination with the other constituents in concentrations outside the specified ranges are substantially less effective in achieving the desired results.
  • the basic effects and reasons for limits on incorporation of the various components is shown below.
  • One of the surprising features of slurries of the present invention is their ability to provide a defect-free polished surface at extremely low particle concentrations. Typical final polish slurries, e.g. Rodel LS-10, are supplied at a solids content of 13% and diluted 15:1 prior to use. This yields an as-used solids concentration of 0.87%.
  • SiO 2 particle concentrations are set by performance limitations. At zero solids concentration no useful performance is observed. A concentration of 0.2% SiO 2 particle solids in as-used form represents a lower boundary for effective polishing performance.
  • Another surprising feature of slurries of the present invention is the effect of the addition of small amounts of salts on the quality of the polished silicon surface. While the precise basis of the salt effect is not fully understood, its effect is to significantly reduce the concentration of light point defects when used in combination with an amine. Salt concentrations below about 100 ppm in the slurry as used do not appear to have a significant beneficial effect. Salt concentrations above about 1000 ppm in the slurry as used also do not appear to have a beneficial effect.
  • a practical upper limitation to the salt content is its concentration in the slurry concentrate prior to dilution. For example, a salt concentration of 5000 ppm when used at 20:1 dilution corresponds to a concentrate level of 10%.
  • the most important useful feature of the salt is that its cation have a low charge/radius ratio and that it is not selected from Group IA of the periodic table or from any of the
  • the ammonium cation is preferred.
  • Other useful cations include the heavier alkaline earth elements (i.e., Sr and Ba) and the various quaternary ammonium and alkyl-substituted quaternary ammonium ions.
  • the choice of anion used in the salt is less restrictive, being generally dictated by the aqueous solubility of the salt. Nitrate, acetate, citrate, and carbonate anions are preferred for this reason.
  • Slurries of the present invention utilize amines and amine compounds as a base for adjustment of pH.
  • An unexpected aspect of the invention is the aforementioned positive interaction between the amine used and the salt used which together result in the reduction of surface defects.
  • Use of ammonium hydroxide, either alone or in combination with the aforementioned salts, does not exhibit this effect.
  • Other potential bases, such as sodium or potassium hydroxide, are excluded due to the aforementioned wafer purity requirements.
  • a wide variety of amines and compounds containing amine groups are useful additives. These include primary amines, secondary amines, tertiary amines, quaternary amines, heterocyclic amines, and any mixtures thereof.
  • Preferred amines are ethanolamine, aminoethanolamine, guanidine, and ethylenediamine. Concentrations of the amine used are those sufficient to adjust the pH of the as-used slurry to any desired pH within the pH range of about 8 to about 11. Adjustment of pH to levels below or above this range yields increased surface defect levels and haze. A preferred pH is about 9 to about 11, and a more preferred pH is 9.8 in the slurry as used. Amines are particularly useful in maintaining pH over a wide range of dilutions as taught by Huff.
  • the function of the dispersion agent in slurries of the present invention is to reduce the tendency of slurry particles to adhere to the wafer surface during post-polish cleaning and drying operations.
  • the dispersion agents are specifically restricted to polyelectrolytes, as this class of dispersion agent has been shown to not interfere with the polishing process.
  • Preferred dispersion agents are homopolymers of polyacrylamide, polyethylene oxide, polyacrylic acid (PAA) and polyvinyl alcohol (PVA), as well as copolymers of these materials in combination with other monomer groups such as styrene.
  • Concentrations of dispersion agent in the slurry as used should be between 20 and 500 ppm. Concentrations below the lower limit are ineffective in blocking particle retention on the polished surface. Concentrations of dispersion agent above the claimed range have no added effectiveness and are generally insoluble in the concentrate prior to dilution or produce undesirable coagulation effects or produce increased slurry viscosity.
  • Slurries of the present invention may also be prepared as concentrates so that upon dilution the various components are reduced in concentration to the desired range for proper activity. Slurries of the present invention are especially useful for production as a concentrate because of their particular usefulness at very low SiO content. This permits a significantly greater quantity of useful slurry to be prepared from a given volume of concentrate as compared to formulations found in the background art.
  • a slurry corresponding to a background art slurry, which contains a polyelectrolyte dispersion agent (PVA), but is free from both salt and amine was prepared for a polishing test.
  • the slurry pH was adjusted to 10.5 with ammonium hydroxide only.
  • the composition and resulting haze and defect density after polishing is listed in Table 1 and is labeled as slurry A.
  • a slurry of the present invention, labeled slurry B was prepared with identical SiO 2 content, PVA content and pH, but with salt and amine added. Both slurries were prepared as concentrates and diluted 20:1 with water prior to their use. Both slurries were used on a commercial polishing machine under identical conditions commonly employed for the final polishing of silicon wafers using identical polishing pads. The improvement in post-polished defect density (light point defects) is clearly seen.
  • Table 1 The improvement in post-polished defect density (light point defects) is clearly seen.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Cette invention se rapporte à une composition de pâte épaisse améliorée et à des procédés d'utilisation de cette composition, pour le polissage final de tranches de silicium. Cette composition comprend de l'eau, des particules de silice d'une grandeur inférieure au micron, ces particules représentant 0,2 à 0,5 % en poids de la composition, un sel à une concentration d'environ 100 à environ 1000 ppm, un composé amine à une concentration suffisante pour amener le pH de la composition à se situer entre environ 8 et environ 11, et un agent de dispersion polyélectrolytique à une concentration comprise entre environ 20 et environ 500 ppm. Cette composition a une teneur totale en sodium et potassium inférieure à environ 1 ppm, et des teneurs en fer, nickel et cuivre chacune inférieure à environ 0,1 ppm, toutes ces ppm étant des parties par million en poids de la composition.
PCT/US1996/007973 1995-06-01 1996-05-30 Compositions pour le polissage de tranches de silicium et procedes correspondants WO1996038262A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU59520/96A AU5952096A (en) 1995-06-01 1996-05-30 Compositions for polishing silicon wafers and methods
EP96916757A EP0840664B1 (fr) 1995-06-01 1996-05-30 Compositions pour le polissage de tranches de silicium et procedes correspondants
DE69612001T DE69612001T2 (de) 1995-06-01 1996-05-30 Polierzusammensetzung für siliziumscheibe und verfahren

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US45803695A 1995-06-01 1995-06-01
US08/458,036 1995-06-01
US08/458,039 1995-06-01

Publications (1)

Publication Number Publication Date
WO1996038262A1 true WO1996038262A1 (fr) 1996-12-05

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Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0846740A1 (fr) * 1996-12-09 1998-06-10 International Business Machines Corporation Composition de polissage
EP0853335A2 (fr) * 1997-01-10 1998-07-15 Texas Instruments Incorporated Suspension de polissage et procédé de polissage mécano-chimique de composants semiconducteurs
EP0896042A1 (fr) * 1997-07-28 1999-02-10 Cabot Corporation Composition de polissage contenant un inhibiteur d'attaque chimique du tungsten
WO2000000567A1 (fr) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Boue de polissage chimico-mecanique utilisee pour polir les substrats de cuivre/tantale
WO2000000560A2 (fr) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Boue de polissage mecano chimique et son procede d'utilisation
US6110396A (en) * 1996-11-27 2000-08-29 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
US6159077A (en) * 1999-07-30 2000-12-12 Corning Incorporated Colloidal silica polishing abrasive
EP1072662A1 (fr) * 1999-07-28 2001-01-31 Eternal Chemical Co., Ltd. Composition abrasive chimio-mécanique et méthode
US6241586B1 (en) * 1998-10-06 2001-06-05 Rodel Holdings Inc. CMP polishing slurry dewatering and reconstitution
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US6322425B1 (en) 1999-07-30 2001-11-27 Corning Incorporated Colloidal polishing of fused silica
WO2002056351A2 (fr) * 2001-01-12 2002-07-18 Rodel Holdings, Inc. Polissage de substrats en semi-conducteur
US6447375B2 (en) 2000-04-19 2002-09-10 Rodel Holdings Inc. Polishing method using a reconstituted dry particulate polishing composition
US6572449B2 (en) 1998-10-06 2003-06-03 Rodel Holdings, Inc. Dewatered CMP polishing compositions and methods for using same
SG97899A1 (en) * 1998-08-13 2003-08-20 Chartered Semiconductor Mfg Cmp method and apparatus for simultaneously polishing product and conditioning the polishing pad
WO2004009719A1 (fr) * 2002-07-19 2004-01-29 Cabot Microelectronics Corporation Composition de polissage contenant un polymere conducteur
EP1416025A1 (fr) * 2002-10-31 2004-05-06 JSR Corporation Suspension aqueuse pour polissage mécano-chimique, procédé de polissage chimico-mécanique, procédé de fabrication de dispositifs semi-conducteurs et matériel pour la préparation d'une dispersion aqueuse
US7014669B2 (en) 2002-02-11 2006-03-21 Dupont Air Products Nanomaterials Llc Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US7241725B2 (en) 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US7491252B2 (en) 2002-03-25 2009-02-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tantalum barrier removal solution
US7513920B2 (en) 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US7534277B2 (en) 2002-12-09 2009-05-19 Cheil Industries, Inc. Slurry composition for secondary polishing of silicon wafer

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US4549374A (en) * 1982-08-12 1985-10-29 International Business Machines Corporation Method for polishing semiconductor wafers with montmorillonite slurry
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
US5307593A (en) * 1992-08-31 1994-05-03 Minnesota Mining And Manufacturing Company Method of texturing rigid memory disks using an abrasive article

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US4274599A (en) * 1977-11-21 1981-06-23 The Dow Chemical Company Ore grinding process including a grinding aid of an anionic polyelectrolyte
US4549374A (en) * 1982-08-12 1985-10-29 International Business Machines Corporation Method for polishing semiconductor wafers with montmorillonite slurry
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
US5307593A (en) * 1992-08-31 1994-05-03 Minnesota Mining And Manufacturing Company Method of texturing rigid memory disks using an abrasive article

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See also references of EP0840664A4 *

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110396A (en) * 1996-11-27 2000-08-29 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
US6238469B1 (en) 1996-11-27 2001-05-29 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
US5876490A (en) * 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
EP0846740A1 (fr) * 1996-12-09 1998-06-10 International Business Machines Corporation Composition de polissage
EP0853335A2 (fr) * 1997-01-10 1998-07-15 Texas Instruments Incorporated Suspension de polissage et procédé de polissage mécano-chimique de composants semiconducteurs
EP0853335A3 (fr) * 1997-01-10 1999-01-07 Texas Instruments Incorporated Suspension de polissage et procédé de polissage mécano-chimique de composants semiconducteurs
US6322600B1 (en) 1997-04-23 2001-11-27 Advanced Technology Materials, Inc. Planarization compositions and methods for removing interlayer dielectric films
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6136711A (en) * 1997-07-28 2000-10-24 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
EP0896042A1 (fr) * 1997-07-28 1999-02-10 Cabot Corporation Composition de polissage contenant un inhibiteur d'attaque chimique du tungsten
WO2000000560A3 (fr) * 1998-06-26 2001-12-13 Cabot Microelectronics Corp Boue de polissage mecano chimique et son procede d'utilisation
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6533832B2 (en) 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
WO2000000560A2 (fr) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Boue de polissage mecano chimique et son procede d'utilisation
WO2000000567A1 (fr) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Boue de polissage chimico-mecanique utilisee pour polir les substrats de cuivre/tantale
SG97899A1 (en) * 1998-08-13 2003-08-20 Chartered Semiconductor Mfg Cmp method and apparatus for simultaneously polishing product and conditioning the polishing pad
US6413288B2 (en) 1998-10-06 2002-07-02 Rodel Holdings, Inc. CMP polishing slurry dewatering and reconstitution
US6572449B2 (en) 1998-10-06 2003-06-03 Rodel Holdings, Inc. Dewatered CMP polishing compositions and methods for using same
US6241586B1 (en) * 1998-10-06 2001-06-05 Rodel Holdings Inc. CMP polishing slurry dewatering and reconstitution
US6464741B2 (en) 1998-10-06 2002-10-15 Rodel Holdings Inc. CMP polishing slurry dewatering and reconstitution
EP1072662A1 (fr) * 1999-07-28 2001-01-31 Eternal Chemical Co., Ltd. Composition abrasive chimio-mécanique et méthode
US6322425B1 (en) 1999-07-30 2001-11-27 Corning Incorporated Colloidal polishing of fused silica
US6616718B2 (en) 1999-07-30 2003-09-09 Corning Incorporated Aqueous solution for colloidal polishing of silicate substrates
US6159077A (en) * 1999-07-30 2000-12-12 Corning Incorporated Colloidal silica polishing abrasive
US6447375B2 (en) 2000-04-19 2002-09-10 Rodel Holdings Inc. Polishing method using a reconstituted dry particulate polishing composition
WO2002056351A2 (fr) * 2001-01-12 2002-07-18 Rodel Holdings, Inc. Polissage de substrats en semi-conducteur
US6676718B2 (en) 2001-01-12 2004-01-13 Rodel Holdings, Inc. Polishing of semiconductor substrates
WO2002056351A3 (fr) * 2001-01-12 2002-11-28 Rodel Inc Polissage de substrats en semi-conducteur
US7429338B2 (en) 2001-10-15 2008-09-30 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US7427305B2 (en) 2002-02-11 2008-09-23 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US7014669B2 (en) 2002-02-11 2006-03-21 Dupont Air Products Nanomaterials Llc Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7513920B2 (en) 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US7491252B2 (en) 2002-03-25 2009-02-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tantalum barrier removal solution
WO2004009719A1 (fr) * 2002-07-19 2004-01-29 Cabot Microelectronics Corporation Composition de polissage contenant un polymere conducteur
KR100987895B1 (ko) * 2002-07-19 2010-10-13 캐보트 마이크로일렉트로닉스 코포레이션 전도성 중합체를 함유한 연마 조성물
EP1416025A1 (fr) * 2002-10-31 2004-05-06 JSR Corporation Suspension aqueuse pour polissage mécano-chimique, procédé de polissage chimico-mécanique, procédé de fabrication de dispositifs semi-conducteurs et matériel pour la préparation d'une dispersion aqueuse
CN100366694C (zh) * 2002-10-31 2008-02-06 Jsr株式会社 化学机械抛光用水分散体及其用途和所用的水分散体材料
US7005382B2 (en) 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
US7534277B2 (en) 2002-12-09 2009-05-19 Cheil Industries, Inc. Slurry composition for secondary polishing of silicon wafer
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US7241725B2 (en) 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
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