WO1996016429A2 - Dispositif a emission de champs muni de structures interieures permettant d'aligner les pixels de phosphore sur les emetteurs de champ correspondants - Google Patents

Dispositif a emission de champs muni de structures interieures permettant d'aligner les pixels de phosphore sur les emetteurs de champ correspondants Download PDF

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Publication number
WO1996016429A2
WO1996016429A2 PCT/US1995/015226 US9515226W WO9616429A2 WO 1996016429 A2 WO1996016429 A2 WO 1996016429A2 US 9515226 W US9515226 W US 9515226W WO 9616429 A2 WO9616429 A2 WO 9616429A2
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WO
WIPO (PCT)
Prior art keywords
faceplate
backplate
interior side
display
field emission
Prior art date
Application number
PCT/US1995/015226
Other languages
English (en)
Other versions
WO1996016429A3 (fr
Inventor
Christopher J. Spindt
John E. Field
Duane A. Haven
Chungdee Pong
Original Assignee
Candescent Technologies Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/343,075 external-priority patent/US5578899A/en
Priority claimed from US08/343,803 external-priority patent/US5543683A/en
Priority claimed from US08/343,074 external-priority patent/US5650690A/en
Application filed by Candescent Technologies Corporation filed Critical Candescent Technologies Corporation
Priority to JP51706796A priority Critical patent/JP3270054B2/ja
Priority to DE69530373T priority patent/DE69530373T2/de
Priority to AU42435/96A priority patent/AU4243596A/en
Priority to EP95940804A priority patent/EP0740846B1/fr
Priority to AT95940804T priority patent/ATE237869T1/de
Publication of WO1996016429A2 publication Critical patent/WO1996016429A2/fr
Publication of WO1996016429A3 publication Critical patent/WO1996016429A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
    • H01J9/242—Spacers between faceplate and backplate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/08—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted or stored, e.g. backing-plates for storage tubes or collecting secondary electrons
    • H01J29/085—Anode plates, e.g. for screens of flat panel displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/467—Control electrodes for flat display tubes, e.g. of the type covered by group H01J31/123
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/86—Vessels; Containers; Vacuum locks
    • H01J29/864—Spacers between faceplate and backplate of flat panel cathode ray tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H01J2329/863—Spacing members characterised by the form or structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
    • H01J2329/86—Vessels
    • H01J2329/8625—Spacing members
    • H01J2329/8665—Spacer holding means

Definitions

  • This invention relates generally to field emission devices, and more particularly, to field emission devices with at least one internal structure that includes fiducials to optically align the faceplate and the backplate, and at least one internal structure that fixes and constrains the faceplate and backplate to align a plurality of phosphor pixels with corresponding field emitters.
  • Field emission devices include a faceplate, a backplate and connecting walls around the periphery of the faceplate and backplate, forming a sealed vacuum envelope.
  • the envelope is held at vacuum pressure, which in the case of CRT displays is about 1 x 10 '7 torr or less.
  • the interior surface of the faceplate is coated with light emissive elements, such as phosphor or phosphor patterns, which define an active region of the display.
  • Cathodes, (field emitters) located adjacent to the backplate are excited to release electrons which are accelerated toward the phosphor on the faceplate, striking the phosphor, and causing the phosphor to emit light seen by the viewer at the exterior of the faceplate. Emitted electrons for each of the sets of the cathodes are intended to strike only certain targeted phosphors. There is generally a one-to-one correspondence between each emitter and a phosphor.
  • Flat panel displays are used in applications where the form-factor of a flat display is required. These applications are typically where there are weight constraints and the space available for installation is limited, such as in aircraft or portable computers.
  • a certain level of color purity and contrast are needed in field emission devices. Contrast is the difference between dark and bright areas. The higher the contrast, the better.
  • the parameters of resolution, color-purity and contrast in a flat cathodeluminescent display depend on the precise communication of a selected electron emitter with its corresponding phosphor pixels. Additionally, high picture brightness (lumens), requires either high power consumption or high phosphor efficiency (lumens/watt).
  • the backplate containing the emitter array must be spatially separated from the faceplate, containing the phosphor pixels, by a distance sufficient to prevent unwanted electrical events between the two. This distance, depending on the quality of the vacuum and the topography of the substrates, is typically greater than about 2 mm.
  • the vacuum envelope is unable to withstand 1 atmosphere or greater external pressure without inclusion of the spacer walls. If the spacer walls are not included then the faceplate and backplate can collapse. In rectangular displays, having greater than approximately a 1 inch diagonal, the faceplate and backplate are particularly susceptible to this type of mechanical failure due to their high aspect ratio, which is defined as the larger dimension of the display divided by the thickness of the faceplate or backplate.
  • the use of spacer walls in the interior of the field emission device substantially eliminates this mechanical failure.
  • the use of spacer walls has been reported in U.S. Patent No. 4,900,981; U.S. Patent No. 5,170,100; EPO 464 938 A1; EPO 436 997 A1 ; EPO 580244 A1 ; and EPO 496450 A1.
  • the faceplates and backplates for the desired flat, light portable display are typically about 1 mm thick. To avoid seeing the spacer walls at the exterior of the faceplate, the spacer walls should be hidden behind a suitable structure such as a black matrix.
  • flat panel displays to date and standard CRT's have high-temperature assembly requirements, including but not limited to plasma addressed liquid crystal (PALC), and the like, where the alignment during assembly consists of external, mechanical alignment of the faceplate and the backplate so that the correspondence of the phosphor pixels and the associated cathode emitters are initially within tolerance.
  • PLC plasma addressed liquid crystal
  • These external fixturing devices travel with the field emission display through the required high temperature bonding and sealing processes.
  • External fixturing devices have difficulties in maintaining a high precision of alignment because of differences in the coefficient of thermal expansion between the field emission display and the fixturing. Resulting misalignment gives a loss of color purity and resolution in the field emission display.
  • Another disadvantage of external tooling is the cost of individual fixture tooling for each field emission display during the sealing and thermal processing of the displays.
  • a field emission display which does not use external fixturing devices in the high temperature bonding and sealing processes
  • a faceplate for a field emission display that includes a black matrix grid, formed on the faceplate interior side and made of column and row guard bands, with a wall locator formed in a column or row guard
  • a self aligned focus grid for a field emission display and
  • a plurality of scattering shields in a high voltage display, a plurality of scattering shields, defining a subpixel volume, to reduce electron escape.
  • Another object of the invention is to provide a faceplate for a field emission display that includes a black matrix formed on an interior surface of the faceplate, and a wall locator formed in the black matrix. Yet another object of the invention to minimize misalignment of the electron beam in a field emission display and the consequential loss of color purity.
  • Still a further object of the invention is to provide a flat panel display with a faceplate interior side that includes a plurality of scattering shields surrounding each phosphor subpixel and defining a subpixel volume.
  • a field emission display device that includes a faceplate and a backplate.
  • the faceplate has an interior side with an active region made of pluralities of phosphor pixel elements.
  • the backplate has an interior side with pluralities of field emitters, each plurality of field emitters defining a sweet spot.
  • Sidewalls are positioned between the faceplate and the backplate to form an enclosed sealed envelope between the sidewalls, backplate interior side and the faceplate interior side.
  • At least one spacer wall is positioned in the envelope to support the backplate and the faceplate against forces acting in a direction toward the envelope.
  • at least one internal structure is included that fixes and constrains the faceplate and the backplate relative to each other, and aligns a phosphor pixels with corresponding field emitters.
  • the internal structure includes a spacer wall gripper with a receiving trench formed on the interior side of the faceplate, and a locator formed on the interior side of the backplate.
  • the spacer wall is mounted in the receiving trench and is retained in the locator.
  • the wall gripper has sufficient flexibility to receive the spacer wall in a substantially straightened geometry which is easily maintained throughout the sealing and thermal processing of the display.
  • Each receiving trench has a trapezoid geometry which is very effective in gripping the spacer wall.
  • the width of the receiving trench is the same width or smaller than a width of the spacer wall.
  • the faceplate and backplate can each include an alignment fiducial.
  • a spacer wall is positioned in the wall gripper.
  • the faceplate and backplate fiducials are then optically aligned, and brought together so that the spacer wall becomes positioned in the locator. This essentially eliminates the need for external fixturing devices during the bonding and sealing stages, and the phosphor pixels are aligned with the corresponding field emitters .
  • One end of the spacer wall is fixably mounted in the receiving trench by the use of, for example, a frit.
  • the spacer wall can have a different coefficient of thermal expansion than the faceplate or the backplate. This results because the receiving trench is able to grip and position the spacer walls even though there is a difference in thermal expansion of the faceplate, backplate and spacer walls during thermal and sealing processing.
  • Figure 1 is a graph of a curve of luminous efficiency verses voltage for a representative cathode luminescent phosphor.
  • Figure 2 is a perspective view of a field emission display device.
  • Figure 3 is a cross-sectional view of the field emission display device of Figure 2.
  • Figure 4 is a cross-sectional view of part of a flat panel display according to an embodiment of the invention including field emitters, phosphor subpixels, and scattering shields.
  • Figure 5 is a schematic diagram of back scattered electrons in a display without scattering shields
  • Figure 6 is a schematic diagram illustrating the effect of scattering shields and back scattered electrons.
  • Figure 7 is a graph of the fraction of current striking another phosphor subpixel verses the height of scattering shields for a typical display operated at 4 kV.
  • Figure 8 is an exploded view of the field emission device with fiducials formed in the black matrix and the focus grid.
  • Figure 9 is an exploded view of the field emission device with fiducials formed in the faceplate substrate and the focus grid.
  • Figure 10 is an enlarged perspective view of a spacer wall gripper foimed at the interior side of the faceplate.
  • Figure 11 is a perspective view of the spacer wall gripper and the pluralities of phosphor pixels.
  • Figure 12 illustrates a perspective view, as in Figure 11, with the spacer wall being introduced into the receiving trench.
  • Figure 13 is a perspective view of the spacer wall positioned in the receiving trench formed in the black matrix.
  • Figure 14 is a perspective view of the faceplate interior side with spacer walls positioned in receiving trenches formed in the black matrix.
  • Figure 15 is a cross-sectional view of a wall spacer in a receiving trench, and illustrates that the receiving trench is flared with a trapezoid geometry.
  • Figure 16 illustrates a process for creating the wall gripper structure.
  • Figure 17 illustrates a process for creating a locator formed on the interior side of the backplate.
  • Figure 18 is a perspective view of the backplate.
  • a flat panel display is a display in which a faceplate and backplate are substantially parallel, and the thickness of the display is small compared to the thickness of a conventional deflected-beam CRT display.
  • the thickness of the display is measured in a direction substantially perpendicular to the faceplate and backplate.
  • the thickness of a flat panel display is substantially less than about 2.0 inches, and in one embodiment it is about 4.5 to 7.0 mm.
  • a flat panel display 10 includes a faceplate 12, backplate 14 and side walls 16, which together form a sealed envelope 18 that is held at vacuum pressure, e.g., approximately 1 x 10 7 torr or less.
  • One or more spacer walls 20 support faceplate 12 against backplate 14.
  • Spacer walls 20 can include electrodes positioned along their longitudinal length.
  • spacer walls 20 include walls, posts and wall segments.
  • spacer walls 20 have a sufficiently small thickness so that they provide minimal interference with the operation of flat panel display 10, particularly the cathodes (field emitters) and phosphors of the device.
  • Spacer walls 20 are made of a ceramic, glass, glass-ceramic, ceramic tape, ceramic reinforced glass, devitrified glass, amorphous glass in a flexible matrix, metal with electrically insulating coating, bulk resistivity materials such as a titanium aluminum chromium oxide, high-temperature vacuum compatible polyimides or insulators such as silicon nitride.
  • Spacer walls 20 have a thickness of about 20 to 60 ⁇ m, and a center-to- center spacing of about 8 to 10 mm. Spacer walls 20 provide internal supports for maintaining spacing between faceplate 12 and backplate 14 at a substantially uniform value across the entire active area of the display at an interior surface of faceplate 12.
  • a plurality of field emitters 22 are formed on a surface of backplate 14 within envelope 18.
  • field emitters 22 can include a plurality of field emitters or a single field emitter.
  • Row and column electrodes control the emission of electrons from field emitters 22. The electrons are accelerated toward a phosphor coated interior surface of faceplate 12.
  • Integrated circuit chips 24 include driving circuitry for controlling the voltage of the row and column electrodes so that the flow of electrons to faceplate 12 is regulated. Electrically conductive traces are used to electrically connect circuitry on chips 24 to the row and column electrodes.
  • faceplate 12 and backplate 14 consist of glass that is about 1.1 mm thick.
  • a hermetic seal 26 of solder glass including but not limited to Owens-Illinois CV 120, attaches side walls 16 to faceplate 12 and backplate 14 to create sealed envelope 18.
  • the solder glass must withstand a 450 degree C sealing temperature.
  • Within envelope 18 the pressure is typically 10 8 torr or less. This high level of vacuum is achieved by evacuating envelope 18 through pump port 28 at high temperature to cause absorbed gasses to be removed from all internal surfaces. Envelope 18 is then hermetically sealed by a pump port patch 30.
  • Faceplate 12 includes pluralities of pixels. In order to provide good purity of color and high resolution, electrons emitted by field emitters 22 are directed to, and fall only on a corresponding plurality of pixels. An electron beam 34 from field emitters 22 is focussed and directed by a focus grid 36 to a color picture element comprised of a plurality of phosphors 32, and a black matrix 37 formed on an interior side of faceplate 12. Various parameters are associated with the direction of electrons from field emitters 22 to the proper associated plurality of phosphor pixels 32.
  • a light reflective layer including but not limited to aluminum, is deposited on black matrix 37 and phosphor pixels 32 with a thickness of about 200 to 600A.
  • the ratio of area of the plurality of phosphor pixels 32 to black matrix 37 for a 10 inch diameter screen with color resolution of 640(x3) x 480 picture elements is about 50%.
  • Field emission display 10 includes at least one internal structure in envelope 18 that fixes and constrains faceplate 12 to backplate 14, and thus aligns a plurality of phosphor pixels 32 with a corresponding sweet spot associated with the field emitters 22 to within a predetermined tolerance of 0.0005 inches or less.
  • This internal structure is a wall gripper 42 foimed on an internal side of faceplate 12, and a locator 44 formed on an interior side of backplate 14. It will be appreciated that wall gripper 42 can be formed on back plate 14, and locator 44 can be formed on faceplate 12.
  • a spacer wall 20 is mounted in wall gripper 42, and retained in locator 44.
  • the most significant parameter of the alignment issue is the precision to which faceplate 12, e.g., black matrix 37 and phosphor pixels 32, is aligned to backplate 14, e.g., focus grid 36 and field emitters 22, and thereafter held in place without movement during the thermal assembly process. This is achieved with the internal structure in envelope 18 without the use of external fixturing devices.
  • Black matrix 37 is made of a photo-patternable material including but not limited to black chromium, polyimide, black frit, and the like. Both black matrix 37 and focus grid 36 are configured by photolithography. The phototooling to create black matrix 37 is substantially the same as the phototooling used to create focus grid 36, wall gripper 42 and locator 44.
  • Spacer walls 20 are first mounted in wall gripper 42. Thereafter, faceplate 12 and backplate 14 are locked together, to within the allowed tolerances, by positioning spacer walls 20 in corresponding locators 44.
  • faceplate 12 and backplate 14 consist of glass that is about 1.1 mm thick.
  • a hermetic seal 26 of solder glass including but not limited to Owens-Illinois CV 120, attaches side walls 16 to faceplate 12 and backplate 14 to create sealed envelope 18.
  • the entire display 10 must withstand a 450 degree C sealing temperature.
  • the pressure is typically 10 "7 torr or less. This high level of vacuum is achieved by evacuating envelope 18 through pump port 28 at high temperature to cause absorbed gases to be removed from all internal surfaces. Envelope 18 is then sealed by a pump port patch 30.
  • Faceplate 12 includes a plurality of phosphor subpixels 32. Electrons defining an electron beam 34 are accelerated from a plurality of field emitters with energies in the range of 1kV to 10kV. Electron beam 34 is focused by focus grid 36 to strike a corresponding phosphor subpixel 32. There is a one-to-one correspondence between a set of field emitters 22, positioned within a section of focus grid 36, to a phosphor subpixel 32. Each phosphor subpixel 32 is surrounded by a plurality of scattering shields 38 which define a subpixel volume 40.
  • FIG. 5 illustrates the results with a black matrix but without scattering shields 38. Electrons in electron beam 34 are accelerated from a plurality of field emitters 22 to strike their corresponding phosphor subpixels 32. Some of these electrons are back scattered from a phosphor subpixel or an adjacent area to an internal support 20 as represented by ray 35. Other electrons are back scattered and strike non- corresponding phosphor subpixels, as shown with ray 39. Back scattered electrons can strike other insulating elements in envelope 18. Back scattering electrons onto resistive surfaces, such as internal supports 20, affects the ratio of brightness to power of display 10 by limiting the amount of current that can be used. Further, the back scattering onto internal supports 20 limits the height of internal supports 20 and thus the high voltage.
  • Back scattering of electrons to non-corresponding phosphor subpixels reduces contrast and color purity of display 10.
  • a black matrix typically has a low aspect ratio. Additionally, it is difficult to make a structure with a sufficient aspect ratio to prevent electrons escaping from their subpixel volume 40.
  • Figure 6 the effects of scattering shields 38 are illustrated. Back scattered electrons strike scattering shields 38, represented by rays 41 and 43, and do not leave their scattering shield volumes 40. They remain essentially captured in their scattering shield volumes 40. Alternatively, if back scattered electrons escape from their scattering shield volume 40 scattering shields 38 capture the back scattered electrons as in the case of ray 45, preventing them from striking non-corresponding phosphor subpixels.
  • scattering shield 38 height is 12 m, 25 ⁇ m, 25 n, 50 ⁇ m, 75 ⁇ m, 100 ⁇ m, or greater.
  • the actual height and size will vary depending on dimensions of the display.
  • Scattering shields 38 can have heights in the range of about 20 to 200 ⁇ m, 20 to 100 ⁇ , and 50 to 100 ⁇ m, scattering shields 38 provide a fivefold improvement in contrast.
  • Scattering shields 38 can be made of a photo pattemable material including but not limited to polyimide. At least a portion of scattering shields 38 can include a black matrix material.
  • fiducials 45 and 47 can be integral to the structure of black matrix 37 and focus grid 36 respectively. Additionally, masks for fiducials 45 and 47 are integral to the phototooling, creating a geometric relationship between fiducial 45 and black matrix 37, and fiducial 47 and focus grid 36.
  • fiducials 45 and 47 can be on each of the substrates of faceplate 1 and backplate 14 respectively and not part of black matrix 37. In any event, fiducials 45 and 47 provide optical alignment of faceplate 12 to backplate 14, and of field
  • ISA EP emitters 22 to corresponding phosphor pixels 32.
  • fiducials 45 and 47 are in optical alignment, e.g., when collimated light falls on faceplate 12 which is transparent to the light, the image of faceplate alignment fiducial 45 is projected onto and maps to backplate fiducial 47.
  • a shadow mask is provided to permit the passage of optical light through fiducials 45 and 47.
  • the mounted spacer walls 20 are physically strong and rigid enough to withstand atmospheric pressure, and maintain alignment of faceplate 12 and backplate 14 through the sealing and thermal processing of the display.
  • the shape of wall gripper 42 as more fully described hereafter, is designed to grip spacer wall 20 tightly and retard its movement.
  • black matrix 37 comprises column and row guard bands.
  • Wall gripper 42 is formed on black matrix 37.
  • wall gripper 42 is formed in a column or row guard band.
  • Wail gripper 42 has a height of about 0.001 inches or greater.
  • a second layer of black matrix 37(a) is formed to create wall gripper 42, which is essentially a pair of raised structures 42(a) and 42(b), creating a receiving trench 46 for spacer wait 20.
  • Wall gripper 42 is formed in a generally perpendicular direction in relation to a series of column guard bands 48. Wall gripper 42 is not visible or distinguishable from a row guard band 51 not containing a wall gripper.
  • wall gripper 42 When viewed at the exterior of faceplate 12, wall gripper 42 is not visible or distinguishable from row guard band 51, and thus has optical integrity. That is, the viewed footprint is the same for a row guard band 51 with a wall gripper 42 as that of a row guard band 51 without a wall gripper 42.
  • a first layer of black matrix 37 is formed, and then a second layer of black matrix 37(a) is created.
  • Second layer 40(a) creates
  • FIG. 12 illustrates the introduction of a spacer wall 20 into receiving trench 46.
  • FIG 13 illustrates spacer wall 20 positioned in receiving trench 46.
  • a perspective view of an interior side of faceplate 12 shows black matrix 37 and five spacer walls 20 positioned in wall grippers 42.
  • the material forming wall gripper 42 is vacuum-compatible at processing temperatures in that it does not decompose or create gas contaminants. Processing temperatures are in the range of about 300 to 450 degrees C.
  • Wall gripper 42 is sufficiently flexible (capable of local deformation) to permit spacer walls 20 to have greater thicknesses than receiving trench 46, and still be capable of insertion into receiving trench 46.
  • Wall gripper 42 also provides a straightening effect on spacer walls 20.
  • Wall gripper 42 is capable of sufficient local deformation to straighten spacer walls 20.
  • wall gripper 42 has a receiving trench 46 geometry with a narrower aperture at the point of receiving a spacer wall 20, than the bottom of receiving trench 46.
  • the depth of receiving trench 46 can be about 0.002 inches.
  • a preferred material for wall gripper 42 is a photodefinable polyimide, such as OCG Probimide 7020, or other similar polymers from DuPont, Hitachi and the like.
  • Black matrix 37 is created from black chromium and photopatterned by conventional lithography on faceplate 12.
  • a first layer of Probimide 7020, denoted as 54, is deposited on black matrix 37 by conventional spin deposition at 750 RPM for 30 seconds. Faceplate 12 is then baked on a hot plate at 70 degrees C for 6 minutes, followed by 100 degrees C for twenty minutes, to drive off solvents.
  • the soft baked Probimide 56 is then photoexposed with an exposure dose of 250 mJ/sq cm at 405 nm through a mask 58 in proximity to Probimide layer 56. Exposed
  • Probimide layer 56 is then baked for 3 minutes at 100 degrees C, followed by a room temperature stabilization of 15 minutes.
  • Probimide layer 56 at this time has an exposure energy profile that creates the trapezoid shape, illustrated in Figure 15, that imparts the gripping function of wall gripper 42.
  • the Probimide is then developed In OCG QZ3501 by a puddle/spray cycle: [3 minutes puddle/1 minute, spray-repeat 1X] followed by a solvent rinse (OCG QZ 3512) for 1 minute.
  • the developed wall gripper 42 is then hard baked for 1 hour at 450 degrees C in a nitrogen atmosphere with a thermal ramp of 3 degrees C per minute. Spacer walls 20 are then inserted into wall gripper 42 , as shown in
  • the insertion axis is perpendicular to the plane of faceplate 12. Insertion can also be accomplished parallel to the plane of faceplate 12 (i.e. slide spacer wall 20 into receiving trench 46 from one end). Spacer wall 20 extends beyond black matrix 37 in an amount sufficient to secure one of its ends with solder glass 60 to substrate 12. Receiving trench 46 has one ore more flared ends to facilitate spacer wall 20 insertion.
  • ISA EP Figure 13 shows spacer wall 20 in place with only one end secured by solder glass 60, or other high temperature adhesives.
  • suitable adhesives include but are not limited to polyimide, and the like.
  • Solder glass 60 can be, but is not limited to, Ol CV 120.
  • the assembly shown in Figure 14 is then baked for one hour at 450 degrees C to devitrify solder glass 60.
  • a suitable oven ramp is 3 degrees C/minute. Securing one end of spacer wall 20 provides mechanical stability of spacer wall 20 for subsequent processing. Additionally, since there is differential expansion and contraction during thermal processing, when spacer walls 20 are secured or pinned at both ends buckling of spacer wall 20 results.
  • Securing spacer wall 20 at only one end enables the use of materials with substantially different coefficients of thermal expansion for spacer walls 20, faceplate 12 and backplate 14, because all differential movement of spacer wall 20 is along the axis of receiving trench 46. It will be appreciated that the present invention is not limited to the preceding example of a process cycle. The present invention can be created with various modifications of this process cycle.
  • spacer wall 20 is fixed and constrained by wall gripper 42 and locator 44, and then once faceplate 12 and backplate 14 are optically aligned, spacer wall 20 is fixed and constrained in locator 44.
  • Backplate 14 of display 10 is constructed to provide correspondence of features with faceplate 12 so that field emitters 22 communicate with the corresponding plurality of phosphor pixels 32, and wall gripper 42 is in optical alignment with locator 44.
  • Wail locator 44 is formed by phototooling compatible with the tooling set used to create wall gripper 42, black matrix 37 and focus grid 36. Focus grid 36 is self aligned to field emitters 22. Consequently, faceplate 12 with spacer walls 20 attached, may be brought into proximity to backplate 14, and be manipulated in the (x .
  • y.O y.O axes so as to bring spacer wall 20 into alignment with wall locator 44, and a respective plurality of phosphor pixels 32 into alignment with its corresponding sweet spot 36.
  • Faceplate 12 may then be translated in the z axis to cause spacer wall 20 to insert into wall locator 44.
  • This assembly provides precision of alignment in the (x,y,0) axis and is held and maintained in position by the mechanically rigid structure formed by spacer walls 20, wall gripper 42 and locator 44.
  • This structure may then be transported through a standard cycle of high temperature sealing and evacuation. Solder-glass may be used in the sealing process. This is done by baking at 450 degrees C for one hour and using a 3 degree C minute thermal ramp. The only fixturing required is to provide sufficient force to hold faceplate 12 and backplate 14 together to maintain contact. No external locating and aligning fixturing is required during thermal processing.
  • locator 44 on backplate 14 is illustrated beginning with backplate 14, row electrodes 50 and column electrode 49.
  • a first layer 64 of OCG Probimide 7020 polyimide is deposited on backplate 14 to a dry thickness of 45 microns by conventional spinning means for 10 seconds at a spin speed of 750 rpm.
  • First layer 64 is soft baked in a two-step process for 6 minutes at a temperature of 79 degrees C followed by 10 minutes at 100 degrees C. It is then exposed through a photomask 68 to define a column focus
  • RECTIFEID SHEET ISA/EP electrode 70 The exposure parameters are: UV light at wavelength from 350 to 450 nm for an exposure dose of 250 mJ/sq cm. The exposed pattern is then developed in OCG QZ 3501 developer for 3 minutes to form column focus electrode 70. A second layer 72 of polyimide is deposited to a dry thickness of 20 microns and exposed through a second photomask 74 using the same exposure and development parameters as first layer 64, to form row focus electrode 76 and locator 44. Locator 44 has a depth of about 10 ⁇ m. The polyimide is imidized by baking at a temperature of 460 degrees C in a nitrogen atmosphere for 1 hour.
  • Backplate structure includes electrically insulating backplate, a base electrode, an electrically insulating layer, metallic gate electrodes, field emitters positioned in gate electrodes, and focusing ridges positioned adjacent to gate electrodes.
  • the gate electrode lies on the insulating layer.
  • the gate electrode is in the shape of a strip running perpendicular to the base electrode.
  • Field emitters contact the base electrode and extend through apertures in the insulating layer. The tips, or upper ends, of field emitters are exposed through corresponding openings in the gate electrode.
  • Field emitters can have various shapes, including but not limited to cones, filament structures, and the like.
  • Focusing ridges generally extend to a considerably greater height above the insulating layer than the a gate electrode.
  • the average height of focusing ridges is at least ten times the average height of a gate electrode.
  • the height of focussing ridges is about 20 to 50 ⁇ m.
  • Field emitters emit electrons at off-normal emission angles when a gate electrode is provided with a suitably positive voltage relative to the field emitter voltage. Emitted electrons move towards phosphor pixels. When struck by these electrons, phosphor pixels emit light.
  • Focusing ridges influence trajectories in such a way that the one-to- one correspondence of phosphor pixels to field emitters is maintained.
  • the phosphors are struck by substantially all of the emitted electrons.
  • the height of scattering shields 38 is sufficient to reduce the number of scattered electrons which escape from a subpixel volume 40.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

Dispositif d'affichage à émission de champ comportant une plaque frontale et une plaque dorsale. La plaque frontale présente une face intérieure comprenant une région active constituée par une multitude de pixels de phosphore et la plaque dorsale présente une face intérieure comportant une multitude d'émetteurs de champ. Des parois latérales sont disposées entre les plaques de manière à former une enceinte fermée comprise entre les faces intérieures des plaques frontale et dorsale. Une paroi d'espacement au moins placée dans l'enceinte contrecarre les forces s'appliquant sur l'enceinte. Une structure intérieure au moins fixe et raidit les plaques frontale et dorsale et maintient les pixels de phosphore face aux émetteurs de champ correspondants. De plus, la plaque frontale peut comporter au moins un repère et la plaque dorsale, un repère aligné sur lui, le repère de la plaque frontale étant en alignement optique avec celui de la plaque dorsale. La paroi d'espacement est tout d'abord placée dans son support de fixation, les repères des plaques frontale et dorsale se trouvant alors en alignement optique puis la paroi d'espacement est introduite dans le localisateur. Les pixels de phosphore se trouvent ainsi alignés avec les émetteurs de champ correspondants. Il n'est pas nécessaire de recourir à des fixations extérieures lors des processus de collage et scellement à haute température de ce dispositif d'affichage.
PCT/US1995/015226 1994-11-21 1995-11-20 Dispositif a emission de champs muni de structures interieures permettant d'aligner les pixels de phosphore sur les emetteurs de champ correspondants WO1996016429A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP51706796A JP3270054B2 (ja) 1994-11-21 1995-11-20 蛍光体画素を対応電界エミッタに整列させる内部構造を有する電界放出装置
DE69530373T DE69530373T2 (de) 1994-11-21 1995-11-20 Feldemissionsvorrichtung mit innerem struktur zum ausrichten von phosphor-pixeln auf entsprechenden feldemittern
AU42435/96A AU4243596A (en) 1994-11-21 1995-11-20 Field emission device with internal structure for aligning phosphor pixels with corresponding field emitters
EP95940804A EP0740846B1 (fr) 1994-11-21 1995-11-20 Dispositif a emission de champs muni de structures interieures permettant d'aligner les pixels de phosphore sur les emetteurs de champ correspondants
AT95940804T ATE237869T1 (de) 1994-11-21 1995-11-20 Feldemissionsvorrichtung mit innerem struktur zum ausrichten von phosphor-pixeln auf entsprechenden feldemittern

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US08/343,803 1994-11-21
US08/343,075 US5578899A (en) 1994-11-21 1994-11-21 Field emission device with internal structure for aligning phosphor pixels with corresponding field emitters
US08/343,803 US5543683A (en) 1994-11-21 1994-11-21 Faceplate for field emission display including wall gripper structures
US08/343,074 US5650690A (en) 1994-11-21 1994-11-21 Backplate of field emission device with self aligned focus structure and spacer wall locators
US08/343,075 1994-11-21
US08/343,074 1994-11-21

Publications (2)

Publication Number Publication Date
WO1996016429A2 true WO1996016429A2 (fr) 1996-05-30
WO1996016429A3 WO1996016429A3 (fr) 1996-08-08

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Country Status (6)

Country Link
EP (1) EP0740846B1 (fr)
JP (1) JP3270054B2 (fr)
AT (1) ATE237869T1 (fr)
AU (1) AU4243596A (fr)
DE (1) DE69530373T2 (fr)
WO (1) WO1996016429A2 (fr)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997019460A1 (fr) * 1995-11-20 1997-05-29 Candescent Technologies Corporation Afficheur a ecran plat a effets de diffusion d'electrons reduits
EP0881656A1 (fr) * 1997-05-30 1998-12-02 Commissariat A L'energie Atomique Espaceurs pour écran plat de visualisation
EP0884753A1 (fr) * 1997-06-13 1998-12-16 Commissariat A L'energie Atomique Procédé de fabrication d'espaceurs pour écran plat de visualisation
US5920151A (en) * 1997-05-30 1999-07-06 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having focus coating contacted through underlying access conductor
US6013974A (en) * 1997-05-30 2000-01-11 Candescent Technologies Corporation Electron-emitting device having focus coating that extends partway into focus openings
EP0975437A1 (fr) * 1997-03-31 2000-02-02 Candescent Technologies Corporation Matrice noire comportant un revetement conducteur
US6022652A (en) * 1994-11-21 2000-02-08 Candescent Technologies Corporation High resolution flat panel phosphor screen with tall barriers
EP0985222A1 (fr) * 1997-05-30 2000-03-15 Candescent Technologies Corporation Structure et fabrication de dispositif emetteur d'electrons a revetement de focalisation specialement configure
EP0985220A1 (fr) * 1997-05-30 2000-03-15 Candescent Technologies Corporation Structure et fabrication de dispositif emetteur d'electrons dote d'une electrode d'emission de type echelle
EP1019939A1 (fr) * 1996-07-17 2000-07-19 Candescent Technologies Corporation Conception de la mise en place d'elements d'ecartement pour structures de focalisation tridimensionnelles d'un afficheur a panneau
EP1082744A1 (fr) * 1998-05-29 2001-03-14 Candescent Technologies Corporation Ecran a structure matricielle encapsulee
EP1137041A1 (fr) * 1998-09-08 2001-09-26 Canon Kabushiki Kaisha Dispositif a faisceau electronique, procede permettant de produire un element suppresseur de charge dans ledit dispositif, et dispositif d'imagerie
JP2002521802A (ja) * 1998-07-30 2002-07-16 キャンデゼント テクノロジーズ コーポレイション 平面パネルディスプレイの除染されたコンポーネント及び前記除染のための方法
US6853129B1 (en) 2000-07-28 2005-02-08 Candescent Technologies Corporation Protected substrate structure for a field emission display device
US7002287B1 (en) 1998-05-29 2006-02-21 Candescent Intellectual Property Services, Inc. Protected substrate structure for a field emission display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988001098A1 (fr) * 1986-07-30 1988-02-11 Commtech International Management Corporation Affichage a panneau plat a adressage matriciel
WO1990000808A1 (fr) * 1988-07-06 1990-01-25 Innovative Display Development Partners Ecran plat a cathode a emission de champ comportant des elements d'ecartement en polyimide
WO1994015350A1 (fr) * 1992-12-23 1994-07-07 Microelectronics And Computer Technology Corporation Affichage a ecran plat et a structure a diodes
EP0623944A1 (fr) * 1993-05-05 1994-11-09 AT&T Corp. Dispositif de visualisation plat et méthode de fabrication

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061674B2 (ja) * 1984-12-04 1994-01-05 ソニー株式会社 螢光表示管
JPS6222362A (ja) * 1985-07-22 1987-01-30 Matsushita Electric Ind Co Ltd 真空容器
US5160871A (en) * 1989-06-19 1992-11-03 Matsushita Electric Industrial Co., Ltd. Flat configuration image display apparatus and manufacturing method thereof
US5216324A (en) * 1990-06-28 1993-06-01 Coloray Display Corporation Matrix-addressed flat panel display having a transparent base plate
NL9100122A (nl) * 1991-01-25 1992-08-17 Philips Nv Weergeefinrichting.
US5229691A (en) * 1991-02-25 1993-07-20 Panocorp Display Systems Electronic fluorescent display
AU6163494A (en) * 1993-02-01 1994-08-29 Silicon Video Corporation Flat panel device with internal support structure and/or raised black matrix

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988001098A1 (fr) * 1986-07-30 1988-02-11 Commtech International Management Corporation Affichage a panneau plat a adressage matriciel
WO1990000808A1 (fr) * 1988-07-06 1990-01-25 Innovative Display Development Partners Ecran plat a cathode a emission de champ comportant des elements d'ecartement en polyimide
WO1994015350A1 (fr) * 1992-12-23 1994-07-07 Microelectronics And Computer Technology Corporation Affichage a ecran plat et a structure a diodes
EP0623944A1 (fr) * 1993-05-05 1994-11-09 AT&T Corp. Dispositif de visualisation plat et méthode de fabrication

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 195 (E-518), 23 June 1987 & JP,A,62 022362 (MATSUSHITA ELECTRIC IND CO LTD), 30 January 1987, *
See also references of EP0740846A1 *

Cited By (28)

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US6022652A (en) * 1994-11-21 2000-02-08 Candescent Technologies Corporation High resolution flat panel phosphor screen with tall barriers
US6384527B1 (en) 1994-11-21 2002-05-07 Candescent Technologies Corporation Flat panel display with reduced electron scattering effects
WO1997019460A1 (fr) * 1995-11-20 1997-05-29 Candescent Technologies Corporation Afficheur a ecran plat a effets de diffusion d'electrons reduits
EP1863064A2 (fr) * 1996-07-17 2007-12-05 Canon Kabushiki Kaisha Conception de localisateur d'espace pour structures de mise au point tridimensionnelle dans un écran d'affichage plat
EP1863064A3 (fr) * 1996-07-17 2008-03-05 Canon Kabushiki Kaisha Conception de localisateur d'espace pour structures de mise au point tridimensionnelle dans un écran d'affichage plat
EP1019939A4 (fr) * 1996-07-17 2000-08-02 Candescent Tech Corp Conception de la mise en place d'elements d'ecartement pour structures de focalisation tridimensionnelles d'un afficheur a panneau
EP1019939A1 (fr) * 1996-07-17 2000-07-19 Candescent Technologies Corporation Conception de la mise en place d'elements d'ecartement pour structures de focalisation tridimensionnelles d'un afficheur a panneau
EP0975437A4 (fr) * 1997-03-31 2001-05-09 Candescent Tech Corp Matrice noire comportant un revetement conducteur
EP0975437A1 (fr) * 1997-03-31 2000-02-02 Candescent Technologies Corporation Matrice noire comportant un revetement conducteur
US5920151A (en) * 1997-05-30 1999-07-06 Candescent Technologies Corporation Structure and fabrication of electron-emitting device having focus coating contacted through underlying access conductor
EP0985222A1 (fr) * 1997-05-30 2000-03-15 Candescent Technologies Corporation Structure et fabrication de dispositif emetteur d'electrons a revetement de focalisation specialement configure
EP0985220A1 (fr) * 1997-05-30 2000-03-15 Candescent Technologies Corporation Structure et fabrication de dispositif emetteur d'electrons dote d'une electrode d'emission de type echelle
US6013974A (en) * 1997-05-30 2000-01-11 Candescent Technologies Corporation Electron-emitting device having focus coating that extends partway into focus openings
EP0985220A4 (fr) * 1997-05-30 2002-11-27 Candescent Intellectual Prop Structure et fabrication de dispositif emetteur d'electrons dote d'une electrode d'emission de type echelle
FR2764109A1 (fr) * 1997-05-30 1998-12-04 Commissariat Energie Atomique Espaceurs pour ecran plat de visualisation
EP0881656A1 (fr) * 1997-05-30 1998-12-02 Commissariat A L'energie Atomique Espaceurs pour écran plat de visualisation
EP0985222A4 (fr) * 1997-05-30 2006-04-19 Candescent Intellectual Prop Structure et fabrication de dispositif emetteur d'electrons a revetement de focalisation specialement configure
US5989090A (en) * 1997-06-13 1999-11-23 Commissariat A L'energie Atomique Method of manufacturing spacers for flat viewing screens
FR2764729A1 (fr) * 1997-06-13 1998-12-18 Commissariat Energie Atomique Procede de fabrication d'espaceurs pour ecran plat de visualisation
EP0884753A1 (fr) * 1997-06-13 1998-12-16 Commissariat A L'energie Atomique Procédé de fabrication d'espaceurs pour écran plat de visualisation
EP1082744A1 (fr) * 1998-05-29 2001-03-14 Candescent Technologies Corporation Ecran a structure matricielle encapsulee
EP1082744A4 (fr) * 1998-05-29 2004-05-12 Candescent Tech Corp Ecran a structure matricielle encapsulee
US7002287B1 (en) 1998-05-29 2006-02-21 Candescent Intellectual Property Services, Inc. Protected substrate structure for a field emission display device
JP2002517882A (ja) * 1998-05-29 2002-06-18 キャンデゼント テクノロジーズ コーポレイション 密閉マトリックス構造体を有するディスプレイ
JP2002521802A (ja) * 1998-07-30 2002-07-16 キャンデゼント テクノロジーズ コーポレイション 平面パネルディスプレイの除染されたコンポーネント及び前記除染のための方法
EP1137041A4 (fr) * 1998-09-08 2006-10-04 Canon Kk Dispositif a faisceau electronique, procede permettant de produire un element suppresseur de charge dans ledit dispositif, et dispositif d'imagerie
EP1137041A1 (fr) * 1998-09-08 2001-09-26 Canon Kabushiki Kaisha Dispositif a faisceau electronique, procede permettant de produire un element suppresseur de charge dans ledit dispositif, et dispositif d'imagerie
US6853129B1 (en) 2000-07-28 2005-02-08 Candescent Technologies Corporation Protected substrate structure for a field emission display device

Also Published As

Publication number Publication date
EP0740846B1 (fr) 2003-04-16
JPH10509834A (ja) 1998-09-22
DE69530373T2 (de) 2004-02-12
AU4243596A (en) 1996-06-17
ATE237869T1 (de) 2003-05-15
WO1996016429A3 (fr) 1996-08-08
DE69530373D1 (de) 2003-05-22
JP3270054B2 (ja) 2002-04-02
EP0740846A1 (fr) 1996-11-06

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