WO1994011786A1 - Plaques pour photomasque - Google Patents

Plaques pour photomasque Download PDF

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Publication number
WO1994011786A1
WO1994011786A1 PCT/US1993/010709 US9310709W WO9411786A1 WO 1994011786 A1 WO1994011786 A1 WO 1994011786A1 US 9310709 W US9310709 W US 9310709W WO 9411786 A1 WO9411786 A1 WO 9411786A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
photomask blank
phase shifter
metallic
profile
Prior art date
Application number
PCT/US1993/010709
Other languages
English (en)
Inventor
Hakki Ufuk Alpay
Roger Harquail French
Franklin Road Kalk
Original Assignee
E.I. Du Pont De Nemours And Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E.I. Du Pont De Nemours And Company filed Critical E.I. Du Pont De Nemours And Company
Priority to DE69329579T priority Critical patent/DE69329579T2/de
Priority to EP94900568A priority patent/EP0670054B1/fr
Priority to JP51224294A priority patent/JP3732853B2/ja
Priority to KR1019950701941A priority patent/KR100305450B1/ko
Publication of WO1994011786A1 publication Critical patent/WO1994011786A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Definitions

  • This invention relates to photomask blanks, and mere particularly, to photomask blanks providing phase shift in incident light at a specified wavelength.
  • Photomask blanks commonly consist of a substrate, e.g., fused silica plate, on which is an opaque chrome film. Photomasks are produced from these blanks by providing a desired pattern of open areas in the film. In use, light is optically projected through the open areas of the photomask onto the surface of a light sensitive substrate, such as a photopolymer-coated semiconductor wafer.
  • a light sensitive substrate such as a photopolymer-coated semiconductor wafer.
  • photomasks are illuminated with visible or ultraviolet light .
  • a fundamental limitation of optical imaging is that line widths of the order of the wavelength of the illuminating light are diffraction limited. In other words, light having a wavelength of the same order of magnitude as the desired optical image will diffract, and the projected image will be wider than the desired image.
  • U.S. Patent No. 4,890,309 discloses a type of attenuated (as opposed to opaque) photomask, particularly useful in X-ray lithography, wherein the material and thickness of the attenuating film are selected to both pass (i.e., transmit) a fraction of the incident electromagnetic radiation and to phase shift the radiation relative to radiation passing through the open features of the mask.
  • the materials of choice are homogeneous films of tungsten, gold, silver, alloys of these materials or alternating layers of high and low atomic number materials (e.g., tungsten and carbon) .
  • phase-shifting photomasks In an effort to avoid the cost and complexity of X-ray lithography, a variety of phase-shifting photomasks have been developed for ultraviolet and visible light ranges (see, for example, B. J. Lin, SOLID STATE TECHNOLOGY, pp. 43-47, January, 1992) .
  • rim phase-shifting photomask which requires either substrate etching or the use of an additional phase-shifting layer.
  • the rim phase-shifting photomask is inherently applicable to arbitrary mask patterns, but requires a large positive mask bias to reduce exposure times to a practical level and due to strong proximity effects it is difficult to delineate all feature sizes and shapes for an arbitrary mask pattern using one common exposure.
  • APSPM attenuated phase-shifting photomask
  • APSPMs employ an absorptive, partially transmitting, phase shifter in place of the conventional opaque chromium part of the patterned film.
  • the transmission of the absorptive phase shifter is adjusted to less than about 0.20 to prevent creation of ghost lines.
  • not all phase shifters can phase shift and absorb by the desired amount. Consequently, a multilayered structure consisting of materials of differing absorptive and phase shifting properties may be required in some cases .
  • a commercially available APSPM utilizes a graded chromium oxycarbonitride composition film which varies from a Cr-N compound at the substrate-film interface to a Cr-O compound at the film-air interface, which also serves as an anti-reflective coating. While this APSPM provides a degree of phase shifting, a further procedure, such as reactive ion etching of the substrate, in this case, fused silica, is necessary to achieve the desired 180° phase shift.
  • This invention provides a transmissive embedded phase shifter-photomask blank (i.e., an EPS-PMB) for a selected wavelength which comprises an optically inhomogeneous attenuating film having a transmission of at least 0.001 and consisting essentially of a combination of a metallic component and a dielectric component; wherein one surface of the film has a higher content of metallic compo ' ent than the other surface, and the profile of change in the extinction coefficient is gradual through the film thickness; and wherein said profile of change and the film thickness are selected to provide a phase shift of about 180° (or an odd multiple thereof) at the selected wavelength.
  • EPS-PMB transmissive embedded phase shifter-photomask blank
  • Figure 1 Graph of the Index of Refraction (n) and Extinction Coefficient (k) as a function of wavelength ( ⁇ ) in nanometers for a representative metallic . material.
  • Figure 3 Graph of a depth wise profile of the index of refraction (n) as a function of distance from substrate surface (D) in Angstroms for a graded embedded phase shifter-photomask blank for 253 nm wavelength.
  • Figure 4. Graph of the optical transmission (T) as a function of wavelength ( ⁇ ) in nanometers for an embedded phase shifter-photomask blank for use at 253 nm.
  • Figure 6 Graph of a depth wise profile of the index of refraction (n) as a function of distance from substrate surface (D) in Angstroms for an embedded phase shifter-photomask blank for use at a wavelength of 365 nm.
  • Figure 7 Graph of a depth wise profile of the index of refraction (n) as a function of distance from substrate surface (D) in Angstroms for an embedded phase shifter-photomask blank for use at a wavelength of 257 nm.
  • This invention provides an advantageous film for photomask blanks.
  • the film provides a phase shift of about 180° (preferably 180° ⁇ 10°) or an odd multiple thereof, for particular incident wavelengths, and is thus especially useful for producing photomasks.
  • the film is deposited on a substrate.
  • the substrate can be any mechanically stable material which is transparent to the wavelength of incident light used. Substrates such as quartz and fused silica (glass) are preferred for availability and cost.
  • the films of this invention are optically inhomogeneous, in that the extinction coefficient changes through the film thickness.
  • the optically inhomogeneous attenuating film in accordance with the instant invention is typically in the form of a continuously varying structure ranging from optically metallic characteristics at the one surface (normally a substrate-film interface) to optically dielectric characteristics at the other surface (normally a film- air interface) .
  • the metallic component e.g., Cr-N compounds
  • the metallic component is characterized by an extinction coefficient within the range of 0 to 6 (preferably from 0.5 to 3.5) which generally decreases in magnitude with increasing photon energy for energy in the range from 1.5 to 6.5 eV
  • the dielectric component e.g., Cr-O compounds
  • the refractive index of the metallic component is generally from 1 to 6, and is preferably from 2 to 5
  • the refractive index of the dielectric component is generally from 1 to 3.5, and is preferably from 1.2 to 2.8.
  • the metallic and dielectric components of the inhomogeneous attenuating film can be selected from materials such as transition, and non-transition, metal fluoro-oxy-carbo-nitrides.
  • Materials which are particularly suited to the practice of this invention are metallic oxy-carbo-nitrides (i.e., M-O-C-N) , metallic chloro-oxy-carbo-nitrides (i.e., M-C1-0-C-N) , metallic chloro-fluoro-oxy-carbo-nitrides (i.e., M-Cl-F-O-C-N) and metallic fluoro-oxy-carbo- nitrides (i.e., M-F-O-C-N) where M is selected from the group consisting of Cr, Fe, Mo, Zn, Co, Nb, Ta, W, Ti, Al, Mg, and Si.
  • the profile of the film's extinction coefficient changes gradually through the film thickness, and can vary in a smooth continuous manner or in a stepwise graded manner.
  • the volume percent of the metallic and dielectric components for a given film are defined from the point in the film thickness where the extinction coefficient has a value equal to the average of the extinction coefficients of the two surfaces of the film.
  • This "optical midpoint" position for the extinction coefficient in the film is considered for the purpose of this invention, the effective interface between the metallic and dielectric components, even though no abrupt interface of change in the extinction coefficient may exist at that location in the film thickness.
  • other optical properties such as the index of refraction will also change gradually through the film thickness (see e.g., Figure 3) .
  • the optically inhomogeneous film must have a degree of transparency sufficient for the phase shift provided by the film to have' the desired effect on the line width produced by the photomask.
  • the maximum thickness of the film used in the photomask blank, dmax r may be estimated in terms of index of refraction of the dielectric component of the dielectric surface of the film, n t0 p/* and the wavelength, ⁇ , of light used, by: (m ⁇ ) d ⁇ i ax - (2(n t0 p - 1>> where m is an odd positive integer.
  • m is typically equal to 1 or 3, but it is not limited to such, for example in the X-ray region.
  • the volumes of the metallic and dielectric components can vary in thickness from essentially 0 to a thickness defined by the requirement that these inhomogeneous attenuating films have sufficient transparency.
  • the metallic component is from 5 nanometers to 150 nanometers thick, and the dielectric component is from 10 nanometers to 400 nanometers thick.
  • composition of the film can be designed in accordance with multiple requirements that the film have the 180° phase shift required by embedded phase shifters at the desired wavelength of light employed, and that the film have the desired transmission.
  • the film design should also take into account the desired reflectivity for a particular application. Typically, desired reflectivities are within the range of from 0 to about 0.5.
  • a generalized design may be constructed with the metallic component at one film surface (e.g., adjacent to the substrate) , and the dielectric component at the other film surface (e.g., adjacent to air) and a selected profile of gradual transition from metallic to dielectric as discussed above.
  • the index of refraction and extinction coefficient for each of the two components along with an estimated film thickness and a selected profile of change in optical properties, one may calculate the transmission, reflectivity, and phase shift for the film.
  • One may use the well known matrix method (see 0. S. Heavens, "Optical Properties of Thin Solid Films", Dover Publications, NY, 1965, pp.
  • Computers may be used to perform the numerical computations. For a given profile, optimization of the film design is accomplished by calculating transmission, reflectivity and phase shift combinations within manufacturable ranges, and determining which combinations provide the preferred solutions. Using computerized calculations based upon the matrix method, the profile may be modeled as a large number of thin homogeneous layers, and the characteristic matrices of all the layers are matrix multiplied to calculate the reflectivity, transmission and phase shift for the film. Predetermined optical property profiles might be used, such as linear, quadratic, cubic, exponential or gaussian. In practice the profile will be constrained by the particular equipment used to manufacture the films . The equipment will also normally determine the upper and lower limits for thicknesses of regions in the film structure.
  • the. attenuating films consist essentially of from 99% to 1% by volume (as defined above) , preferably from 85% to 5% by volume metallic component, and from 1% to 99%, preferably from 15% to 95% dielectric component based upon the total volume of the attenuating film.
  • Photomask blanks can be prepared by methods well known in the art.
  • a photomask blank in accordance with this invention can generally be prepared by depositing a single inhomogeneous attenuating layer on a transparent substrate in a single pass, continuous deposition process.
  • Conventional substrates may be used as such, or may be coated with a conductive and transparent film of a material such as indium oxide or stannic oxide.
  • the attenuating film may be deposited on a substrate by reactive sputter deposition.
  • Reactive sputtering is a coating process that takes place in a vacuum chamber. Within the vacuum chamber is a sputter chamber filled with a gas mixture comprising inert gas and reactive gas under a predetermined pressure.
  • a target comprising the material to be sputtered . is positioned in the sputter chamber on an electrically conductive cathode. As a negative electrical potential is applied to the target, a plasma extending from the surface of the target is formed.
  • the plasma comprises inert and reactive gas ions and species, and atomic units of the target. The atomic target units travel through the plasma to the substrate to be coated, and react with the reactive gas species to form various compositions.
  • compositions are deposited in a thin film or layer on each substrate as the substrate moves through the sputter chamber.
  • Inert gases suitable for this process include argon, neon, krypton, and xenon.
  • Suitable reactive gases include nitrogen, oxygen, methane and carbon dioxide.
  • Pressure in the sputter chamber is usually in the range of 3.0 x 10 ⁇ 2 to 1.0 x 10 ⁇ 3 Torr.
  • the target is typically chrome or a chrome- based material, such as chromium nitride, chromium carbide or chromium oxide.
  • the photomask blanks of this invention having an inhomogeneous attenuating film, may be advantageously prepared using a reactive sputter deposition technique wherein substrates are continuously moved through a sputter chamber, by providing multiple targets (e.g., chrome-based targets) placed at intervals in the direction of movement of the substrates through the sputter chamber.
  • targets e.g., chrome-based targets
  • the composition of the plasma over each target and the plasma overlap between targets can be adjusted to deposit onto the moving substrate a single attenuating layer having strata of different compositions and/or inter-strata transitional regions wherein the composition gradually changes from the composition of one stratum to the composition of the next resulting in an inhomogeneous attenuating layer.
  • This invention includes embodiments of transmissive EPS-PMBs which may be used with wavelengths within the range of 110 nm to 1000 nm.
  • EXAMPLE 1 Two chromium targets were positioned in a commercially available direct current planar magnetron sputtering device. Each target was about six inches wide, twenty inches long and 0.25 inches high. The edge-to-edge distance between targets was about five inches .
  • the sputter chamber was filled with a gas comprising argon, nitrogen, oxygen carbon dioxide and methane. A polished glass substrate was moved through the sputter chamber under the conditions set forth in Table 1.
  • the substrates removed from the chamber had a film coating of about 87 nanometers, as determined by stylus profilometry.
  • the optical reflectivity and transmission, as well as the ellipsometric spectra of the air-film and substrate-film surfaces, were measured.
  • the optical properties such as the index of refraction and the extinction coefficients at the air-film surface and the substrate-film surface, and also the profile of these optical properties was modeled using the matrix method described herein.
  • the optical properties calculated for the material at the substrate-film surface are shown in Figure 1 and are of a metallic nature as defined above, while the optical properties calculated for the material at the film-air surface are shown in Figure 2 and have a dielectric nature as defined above.
  • the transmission of the photomask blank produced is shown in Figure 4, where the transmission of the film is about 0.005 at a wavelength of 253 nm. At this wavelength the phase shift of the transmitted light as determined by the matrix method is about 180° as illustrated in Figure 5. The reflectivity of this film was measured as about 0.19 at 253 nm. This photomask blank therefore is considered an embedded phase shifter photomask blank for use at 253 nm.
  • EXAMPLE 2 A EPS-PMB is designed for use at 365 nm. Using the metallic and dielectric components shown in Figure 1 and Figure 2, respectively, a profile suitable for an EPS-PMB with a transmission of 0.027, a reflectivity of about 0.16 and 180° phase shift at 365 nm is shown in Figure 6.
  • EXAMPLE 3 A EPS-PMB is designed for use at 257 nm. Using the metallic and dielectric components shown in Figure 1 and Figure 2, respectively, a profile suitable for an EPS-PMB with a transmission of 0.01, a reflectivity of about 0.175 and 173° phase shift at 257 nm is shown in Figure 6.
  • Example 2 and Example 3 demonstrate the inherent advantages of the inhomogeneous nature of these films and the versatility of the metallic and dielectric components of the inhomogeneous attenuating films . Particular embodiments of the invention are illustrated in the examples. Other embodiments will become apparent to those skilled in the art from a consideration of the specification or practice of the invention disclosed herein.

Abstract

L'invention concerne des plaques pour photomasque déphaseur intégré transmissif qui sont constituées d'un film d'affaiblissement optiquement hétérogène présentant une transmission d'au moins 0,001 et consistant essentiellement en la combinaison d'un composant métallique et d'un composant diélectrique. Une surface du film présente une teneur plus élevée en composant métallique que l'autre, et le profil de changement du coefficient d'extinction spécifique est graduel sur l'épaisseur du film. Le profil de changement du coefficient d'extinction et l'épaisseur du film sont sélectionnés de manière à obtenir un déphasage d'environ 180° (ou un multiple impair de celui-ci) à une longueur d'onde sélectionnée.
PCT/US1993/010709 1992-11-16 1993-11-12 Plaques pour photomasque WO1994011786A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE69329579T DE69329579T2 (de) 1992-11-16 1993-11-12 Blankophotomasker
EP94900568A EP0670054B1 (fr) 1992-11-16 1993-11-12 Plaques pour photomasque
JP51224294A JP3732853B2 (ja) 1992-11-16 1993-11-12 フォトマスクブランク
KR1019950701941A KR100305450B1 (ko) 1992-11-16 1993-11-12 포토마스크블랭크

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97678292A 1992-11-16 1992-11-16
US07/976,782 1992-11-16

Publications (1)

Publication Number Publication Date
WO1994011786A1 true WO1994011786A1 (fr) 1994-05-26

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PCT/US1993/010709 WO1994011786A1 (fr) 1992-11-16 1993-11-12 Plaques pour photomasque

Country Status (9)

Country Link
US (1) US5459002A (fr)
EP (1) EP0670054B1 (fr)
JP (1) JP3732853B2 (fr)
KR (1) KR100305450B1 (fr)
CN (1) CN1099613C (fr)
DE (1) DE69329579T2 (fr)
SG (1) SG75788A1 (fr)
TW (1) TW505829B (fr)
WO (1) WO1994011786A1 (fr)

Cited By (8)

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EP0620497A2 (fr) * 1993-04-09 1994-10-19 Dai Nippon Printing Co., Ltd. Masque à décalage de phase en demi-teinte, masque à décalage de phase vierge en demi-teinte, et méthodes de fabrication
WO1995022083A2 (fr) * 1994-02-14 1995-08-17 E.I. Du Pont De Nemours And Company Plaques-supports pour masques de photogravure
EP0668539A2 (fr) * 1994-02-22 1995-08-23 International Business Machines Corporation Matériaux pour couches minces pour fabriquer des masques à décalage de phase atténuant
GB2306699A (en) * 1995-10-25 1997-05-07 Hyundai Electronics Ind Phase shifting mask
EP1130466A2 (fr) * 2000-02-16 2001-09-05 Shin-Etsu Chemical Co., Ltd. Précurseur de photomasque, masque et procédé pour sa fabrication
WO2002069037A2 (fr) * 2001-02-26 2002-09-06 International Business Machines Corporation Plaques pour photomasques d'attenuation a dephasage incorpore
EP1418466A2 (fr) * 2002-10-08 2004-05-12 Shin-Etsu Chemical Co., Ltd. Ebauche de masque à décalage de phase à demi-ton, ainsi que méthode pour sa réalisation
EP1582920A2 (fr) * 2004-03-31 2005-10-05 Shin-Etsu Chemical Co., Ltd. Ebauche de masque atténué à décalage de phase, masque atténué à décalage de phase, ainsi que procédé pour transférer un motif

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US5672243A (en) * 1995-11-28 1997-09-30 Mosel Vitelic, Inc. Antireflection coating for highly reflective photolithographic layers comprising chromium oxide or chromium suboxide
US5897976A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
US5897977A (en) * 1996-05-20 1999-04-27 E. I. Du Pont De Nemours And Company Attenuating embedded phase shift photomask blanks
TW354392B (en) * 1996-07-03 1999-03-11 Du Pont Photomask blanks
US6174631B1 (en) 1997-02-10 2001-01-16 E. I. Du Pont De Nemours And Company Attenuating phase shift photomasks
TW371327B (en) * 1998-05-01 1999-10-01 United Microelectronics Corp Phase-shifting mask (PSM) and method for making the same
US6379014B1 (en) * 2000-04-27 2002-04-30 N & K Technology, Inc. Graded anti-reflective coatings for photolithography
DE102004041853B8 (de) * 2004-04-27 2008-07-10 Von Ardenne Anlagentechnik Gmbh Ventil zur dampfdichten Entkoppelung zweier miteinander verbundener Prozesseinheiten
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
CN103178349A (zh) * 2011-12-26 2013-06-26 深圳光启高等理工研究院 微结构加工方法

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Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0872767A2 (fr) 1993-04-09 1998-10-21 Dai Nippon Printing Co., Ltd. Masque à décalage de phase atténué et ébauche de masque correspondant
EP0620497A2 (fr) * 1993-04-09 1994-10-19 Dai Nippon Printing Co., Ltd. Masque à décalage de phase en demi-teinte, masque à décalage de phase vierge en demi-teinte, et méthodes de fabrication
KR100329946B1 (ko) * 1993-04-09 2002-03-22 기타지마 요시토시 하프톤 위상쉬프트 포토마스크, 하프톤 위상쉬프트포토마스크용 블랭크스 및 이들의 제조방법
EP0620497A3 (fr) * 1993-04-09 1996-07-31 Mitsubishi Electric Corp Masque à décalage de phase en demi-teinte, masque à décalage de phase vierge en demi-teinte, et méthodes de fabrication.
EP0872767A3 (fr) * 1993-04-09 1999-03-17 Dai Nippon Printing Co., Ltd. Masque à décalage de phase atténué et ébauche de masque correspondant
WO1995022083A2 (fr) * 1994-02-14 1995-08-17 E.I. Du Pont De Nemours And Company Plaques-supports pour masques de photogravure
WO1995022083A3 (fr) * 1994-02-14 1995-10-19 Du Pont Plaques-supports pour masques de photogravure
US5939225A (en) * 1994-02-22 1999-08-17 International Business Machines Corporation Thin film materials for the preparation of attenuating phase shift masks
EP0668539A3 (fr) * 1994-02-22 1995-11-22 Ibm Matériaux pour couches minces pour fabriquer des masques à décalage de phase atténuant.
EP0668539A2 (fr) * 1994-02-22 1995-08-23 International Business Machines Corporation Matériaux pour couches minces pour fabriquer des masques à décalage de phase atténuant
GB2306699A (en) * 1995-10-25 1997-05-07 Hyundai Electronics Ind Phase shifting mask
EP1130466A3 (fr) * 2000-02-16 2003-05-07 Shin-Etsu Chemical Co., Ltd. Précurseur de photomasque, masque et procédé pour sa fabrication
EP1130466A2 (fr) * 2000-02-16 2001-09-05 Shin-Etsu Chemical Co., Ltd. Précurseur de photomasque, masque et procédé pour sa fabrication
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US7179545B2 (en) 2002-10-08 2007-02-20 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, and method of manufacture
US7622228B2 (en) 2002-10-08 2009-11-24 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, and method of manufacture
EP1582920A2 (fr) * 2004-03-31 2005-10-05 Shin-Etsu Chemical Co., Ltd. Ebauche de masque atténué à décalage de phase, masque atténué à décalage de phase, ainsi que procédé pour transférer un motif
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EP1813983A2 (fr) * 2004-03-31 2007-08-01 Shin-Etsu Chemical Co., Ltd. Ébauche de masque de déphasage à tramage, masque de déphasage à tramage, et procédé de transfert de motif
EP1813983A3 (fr) * 2004-03-31 2007-10-24 Shin-Etsu Chemical Co., Ltd. Ébauche de masque de déphasage à tramage, masque de déphasage à tramage, et procédé de transfert de motif
US7556892B2 (en) 2004-03-31 2009-07-07 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method

Also Published As

Publication number Publication date
CN1091210A (zh) 1994-08-24
EP0670054B1 (fr) 2000-10-18
KR100305450B1 (ko) 2001-11-22
DE69329579D1 (de) 2000-11-23
SG75788A1 (en) 2000-10-24
JP3732853B2 (ja) 2006-01-11
EP0670054A1 (fr) 1995-09-06
DE69329579T2 (de) 2001-05-31
CN1099613C (zh) 2003-01-22
JPH08503557A (ja) 1996-04-16
US5459002A (en) 1995-10-17
TW505829B (en) 2002-10-11
KR950704723A (ko) 1995-11-20

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