WO1994006151A1 - Procede de detection concernant une profondeur de gravure - Google Patents

Procede de detection concernant une profondeur de gravure Download PDF

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Publication number
WO1994006151A1
WO1994006151A1 PCT/JP1993/001273 JP9301273W WO9406151A1 WO 1994006151 A1 WO1994006151 A1 WO 1994006151A1 JP 9301273 W JP9301273 W JP 9301273W WO 9406151 A1 WO9406151 A1 WO 9406151A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching
light
film
end point
laser beam
Prior art date
Application number
PCT/JP1993/001273
Other languages
English (en)
Japanese (ja)
Inventor
Kazuaki Sajiki
Akira Matsuno
Takashi Nile
Fumiko Wada
Original Assignee
Kabushiki Kaisha Komatsu Seisakusho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP26408492A external-priority patent/JPH0689882A/ja
Priority claimed from JP26408392A external-priority patent/JPH0689881A/ja
Application filed by Kabushiki Kaisha Komatsu Seisakusho filed Critical Kabushiki Kaisha Komatsu Seisakusho
Publication of WO1994006151A1 publication Critical patent/WO1994006151A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO

Definitions

  • the present invention relates to a method for detecting an end point of etching of a laminated film such as a thin film and a thick film.
  • the present invention there is no need to monitor the relationship between the film thickness of the workpiece to be etched and the transmittance or reflectance, and there is no need to calculate the transmittance or reflectance from detected signals or data. It is an object of the present invention to provide a method for detecting an end point in etching based on a completely new principle, which can perform high-accuracy detection with a simple device.
  • the substance When light is applied to a certain substance, the substance is emitted when the wavelength of light matches the absorption range of the substance. May absorb light and emit at another wavelength. Such a phenomenon is called photoluminescence.
  • the present invention utilizes this phenomenon to detect the end point of etching. That is, there is a film to be etched on a film base that emits light when irradiated with a laser beam of a certain wavelength. If the thin film does not transmit the laser light, the laser light does not reach the film base, and the film base does not emit light. When the etching progresses and the film underlayer appears on the surface, the laser beam directly irradiates the film underlayer, so that the film underlayer starts to emit light. By detecting the light emission of the film base based on this principle, the etching end point can be detected.
  • a film portion to be etched is irradiated with a laser beam, and the etching of the film portion is completed and the film is formed under the film.
  • a laser beam is applied to the underlying film, light (hereinafter referred to as P-light) is emitted from the laser, and the end point of etching is determined by detecting this light emission.
  • This end point detection method can be applied to a normal dry etching process such as RIE and plasma etching, and a laser etching process using laser light.
  • a dry etching step the film exposed to the plasma for etching is irradiated with laser light necessary for light emission of the base.
  • the etching progresses and the laser beam directly irradiates the base, P light is emitted from it, and the end point can be detected.
  • the base may emit P light due to the laser light required for the etching process. In this case, this emission may be detected and used as the end point of the etching. Therefore, it is not necessary to newly emit a laser beam for detecting the end point.
  • the processing laser light does not emit P light on the base, it is necessary to irradiate the laser light for end point detection together with the processing laser light.
  • the film to be etched emits light by laser light.
  • the wavelength of the P light of this film is different from the wavelength of the P light of the film base, the P light from the film base can be easily removed by attaching a filter or the like. Since only light can be detected, the end point of etching can be determined.
  • FIG. 1 is a configuration diagram of an apparatus according to a first embodiment of the present invention
  • FIG. 2 is an explanatory diagram of an etching start process of the first embodiment
  • FIG. 3 is an explanatory diagram of an etching intermediate process of the first embodiment
  • FIG. 5 is a diagram showing the relationship between wavelength and absorption and light emission in the film base
  • FIG. 6 is a diagram showing the relationship between wavelength and absorption and light emission in the etched film
  • FIG. FIG. 8 is a configuration diagram of an apparatus according to a second embodiment of the present invention
  • FIG. 8 is an explanatory diagram of an etching start process of the second embodiment
  • FIG. 9 is an explanatory diagram of an etching intermediate process of the second embodiment
  • FIG. FIG. 9 is an explanatory view of a final etching step of the second embodiment.
  • an end point detection device 1 for etching includes a laser oscillation device 3 that oscillates a laser beam (m) such as an excimer laser and irradiates the thin film 10 via a mirror 4 with a laser beam (m). It comprises a light detection sensor 17 for detecting P light (s) emitted from the base of the film due to the irradiation, and a etching chamber 5 provided with a window 6 for introducing laser light (m) and a suction / exhaust hole.
  • a filter 19 for selecting P light (s) emitted from the base of the film to be etched is mounted.
  • the detection sensor 7 for detecting the P light (s) may be visually detected as necessary.
  • an insulating film 10b serving as a film base such as SiON is formed on a glass substrate 10a to a thickness of 0.2 m by sputtering or the like.
  • a transparent electrode (hereinafter referred to as I T0) 10 c serving as a film to be overlaid thereon is formed to a thickness of 0.5 ⁇ m by sputtering or the like.
  • a photoresist 11 is patterned.
  • the detection method of the first embodiment will be described with reference to FIGS.
  • the thin film element 10 is set in the etching chamber 5. After evacuating the etching chamber 5 to a vacuum, a reactive atmosphere gas such as an HC1 atmosphere is introduced. Thin film element 1 0 As shown in FIG. 2, a laser beam (m) is applied to the etching portion 10d where the upper photoresist 11 is not formed. As shown in FIG. 3, the IT100c is etched one after another, but the laser light (m) does not pass through this film while the ITO10c remains. Next, as shown in Fig.
  • SiON film underlayer
  • Si ON 10b starts to emit P light (s) in the visible light region. This P light (s) is detected to determine the end point of the etching.
  • the ITO1Oc to be etched does not transmit the laser light (m), and the Si0N1Ob has a P light (s) at a different wavelength from the ITO10c to be etched.
  • the end point of the etching can be easily detected.
  • Organic films, ITO, and metals such as A1, W, and Ta are examples of films that are etched and do not transmit ultraviolet light such as laser light (m).
  • These film bases and the etching film may emit P light (s) and (s,) when irradiated with laser light (m), as shown in Figs. 5 and 6, respectively. Since the wavelengths of (s) and (s1) are different from each other, only the P light (s) under the film can be easily detected by detecting through the filter 9 as shown in FIG.
  • an end point detection device 20 for etching oscillates a laser beam (m) such as an excimer laser and irradiates the thin film 10 via a mirror 4 with a laser oscillation device 3.
  • a laser beam (m) such as an excimer laser
  • An output sensor 1 and an etching chamber 5 are provided.
  • the etching chamber 5 is provided with a plasma generator 25 including an electrode 21, an insulator 22, a matching box 23, and a high-frequency power supply 24.
  • a filter 19 for selecting the P light (s) is mounted.
  • the structure of the thin film element 10 to be etched is the same as that of the first embodiment.
  • the detection method of the second embodiment will be described with reference to FIGS.
  • the thin film element 10 is set in the etching chamber 5 and evacuated to a vacuum.
  • an etching gas such as Ar is introduced, the plasma generator 25 is operated to generate plasma, and etching is started.
  • plasma etching dry etching
  • laser light (m) is irradiated. Irradiate.
  • the ITO 10 c is gradually etched by the plasma, but the laser light (m) does not pass through this film while the I TO 10 c remains.
  • FIG. 9 the ITO 10 c is gradually etched by the plasma, but the laser light (m) does not pass through this film while the I TO 10 c remains.
  • These film bases and the etching film may emit P light (s) and (s,) by irradiation of laser light (m), respectively, as in the first embodiment. Since the wavelengths of) and (S i) are different from each other, only the P light (s) under the film can be easily detected by detecting through the filter-9 as shown in FIG. Industrial applicability
  • the object to be detected is the sample itself to be etched, there is no need to monitor the relationship between the film thickness of the sample and the transmittance or reflectance, and it is not necessary to calculate the transmittance or reflectance from detected signals or data. It is useful as a method for detecting the end point in simple and reliable etching.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Un procédé de détection permet de déterminer très précisément une profondeur de gravure d'un film à couches multiples minces ou épaisses par exemple, par l'utilisation d'un dispositif simple. Pour graver des couches minces placées sur un substrat (10a), on dirige un faisceau laser (m) sur une couche d'oxyde stannique d'indium (ITO) (10c) à graver. Cette couche étant gravée, le faisceau laser (m) atteint la couche de SiOn (10b) sous-jacente qui émet alors une lumière P (s) dont la détection permet de déterminer la profondeur de la gravure.
PCT/JP1993/001273 1992-09-08 1993-09-08 Procede de detection concernant une profondeur de gravure WO1994006151A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP4/264083 1992-09-08
JP4/264084 1992-09-08
JP26408492A JPH0689882A (ja) 1992-09-08 1992-09-08 エッチングにおける終点検出方法
JP26408392A JPH0689881A (ja) 1992-09-08 1992-09-08 エッチングにおける終点検出方法

Publications (1)

Publication Number Publication Date
WO1994006151A1 true WO1994006151A1 (fr) 1994-03-17

Family

ID=26546340

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1993/001273 WO1994006151A1 (fr) 1992-09-08 1993-09-08 Procede de detection concernant une profondeur de gravure

Country Status (1)

Country Link
WO (1) WO1994006151A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7022673B2 (en) 1998-03-05 2006-04-04 Chiron Corporation Method for increasing the serum half-life of a biologically active molecule
CN1325625C (zh) * 1997-12-22 2007-07-11 道·康宁澳大利亚有限公司 稳定的乳液

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62173711A (ja) * 1986-01-28 1987-07-30 Canon Inc 光反応プロセスのモニタ−方法
JPS63224336A (ja) * 1987-03-02 1988-09-19 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 厚さ変化監視装置
JPH03110836U (fr) * 1990-02-28 1991-11-13

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62173711A (ja) * 1986-01-28 1987-07-30 Canon Inc 光反応プロセスのモニタ−方法
JPS63224336A (ja) * 1987-03-02 1988-09-19 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 厚さ変化監視装置
JPH03110836U (fr) * 1990-02-28 1991-11-13

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1325625C (zh) * 1997-12-22 2007-07-11 道·康宁澳大利亚有限公司 稳定的乳液
US7022673B2 (en) 1998-03-05 2006-04-04 Chiron Corporation Method for increasing the serum half-life of a biologically active molecule

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