WO1993010560A1 - Hochspannungs-isolierscheibe - Google Patents
Hochspannungs-isolierscheibe Download PDFInfo
- Publication number
- WO1993010560A1 WO1993010560A1 PCT/DE1991/000973 DE9100973W WO9310560A1 WO 1993010560 A1 WO1993010560 A1 WO 1993010560A1 DE 9100973 W DE9100973 W DE 9100973W WO 9310560 A1 WO9310560 A1 WO 9310560A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulating
- insulating washer
- cross
- edge region
- washer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
- H05K1/0256—Electrical insulation details, e.g. around high voltage areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
- H01B17/56—Insulating bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09036—Recesses or grooves in insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09045—Locally raised area or protrusion of insulating substrate
Definitions
- the invention relates to an insulating washer made of electrically insulating and heat-conducting material.
- Insulating disks of this type are used for liquid cooling of an electrical component, in particular a semiconductor component, which is arranged in an electrically insulating and thermally conductive manner on a heat sink, in particular a cooling socket. This insulating disk is inserted between the cooling box and the semiconductor component. With such a thin insulating washer with plane-parallel surfaces, partial discharge begins early, sliding discharges form and the flashover resistance is low, which can hardly be increased by increasing the creepage distance.
- An isolating cell is known from German utility model 86 14 173, which is used for the two-sided cooling of disk cell semiconductors.
- This insulating cell has a disk shape and its dimensions are similar to the usual disk semiconductors.
- the centerpiece is an electrically highly insulating, but good heat-conducting disc made of beryllium oxide (BeO) of about 3 mm thickness, which is flanked for good thermal contacting and for the protection of two metal plates made of good heat-conducting material, preferably copper.
- BeO beryllium oxide
- This arrangement is surrounded by an Epoxidharzu pressure and held together.
- These metal plates also have a smaller diameter than the diameter of the beryllium oxide disk, which additionally taper in the direction of the support with the beryllium oxide disk.
- Insulating material still known alumina (Al Og). Such an isolation cell is indeed highly insulating, very heat-conducting and insensitive to pressure, but is also designed to be very complex.
- a cooling box for dissipating the heat loss from semiconductors is known from German Offenlegungsschrift 37 40 233, which contains an insulating plate made of inorganic insulating material when process water is used as the cooling liquid.
- the cooling box consists of two shells with two sockets for supplying and removing the cooling liquid, cooling fins being arranged in the interior of these shells, and contact plates for receiving the heat given off by the semiconductor element and distributing it to the cooling liquid.
- the insulating plate made of inorganic material is arranged between the contact plate and the shell.
- the diameter of the insulating plate is larger than the diameter of the shell and the contact plate.
- the cooling box is encased in plastic to increase the creepage distances.
- Beryllium oxide (BeO) or aluminum oxide (Al O) are provided as inorganic materials.
- the insulating plate has circular solderable metallizations on both sides, which are smaller than the outer diameter of the insulating plate and correspond to the diameter of the shell or the contact plate. This design of the cooling box allows cooling with normal water and there are no glow discharges which occur in the insulating disks described at the beginning (low glow voltage resistance).
- German patent application 39 37 130 discloses a can cooling device for cooling electrical components, the cooling can being encased with a 1 mm to 3 mm thin insulating layer.
- a 1 mm to 3 mm thin insulating layer which consists of casting and / or laminating resin from unsaturated polyester and / or epoxy resins (thermosetting plastic) and / or from modified polystyrene (thermoplastic).
- the outside of the insulating layer is surrounded by an electrically conductive contact socket, for example a copper socket.
- an electrically conductive contact socket for example a copper socket.
- the invention is based on the object of specifying an insulating washer which no longer has the disadvantages mentioned. .
- this object is achieved in that one side of this insulating washer is provided in the edge region with at least one circumferential rib and / or with at least one circumferential groove.
- This surface design of an insulating pane ensures that the value of the breakdown voltage increases significantly while the value of the partial discharge remains the same.
- the overturning strength of an arrangement consisting of two components which are separated from one another by means of this insulating disk can thus be substantially increased without increasing the diameter of this insulating disk.
- this object is achieved in that one side of this insulating washer is provided in the center with a recess, the cross section of which is equal to a cross section of a component.
- this insulating disk is provided with a circumferential groove, the walls of which are coated with a conductive coating, and in that this circumferential groove is arranged in such a way that a cross-sectional area enclosed by the outer edge of the groove is at least larger than the cross-sectional area of a support surface of a component.
- a component for example a semiconductor or a cooling box
- a component with higher dielectric strength inorganic Material, thermosetting plastic
- the threshold voltage for the partial discharge rises.
- this configuration of the insulating washer is particularly advantageous when two components are arranged (an electrical component and a cooling box), the cross sections of which are of different sizes.
- the same advantages are achieved by means of the third insulating pane according to the invention, which is used in the case of an arrangement of a pane semiconductor and a cooling box with a disk-shaped cross-sectional area.
- the side of the component facing the insulating pane can have any shape as long as it does not exceed the outer edge of the groove.
- the depth or the thickness of the bottom of the recess can be changed until the dielectric strength given by the insulating material is reached at an edge of the recessed component. The thermal resistance of this insulating disk is thus minimized.
- the edge region of this insulating pane must be so thick that the field strength around the recessed component in the insulating pane is reduced to a value which is compatible with the medium surrounding the insulating pane (air, oil, potting).
- the insulating section of the recess is a gap larger than the cross-section of a lowerable building element and the sides tenican 'de this recess are conductively coated. This increases the partial discharge resistance.
- the edge region is designed as a circumferential rib. This increase in the area of the creepage distance of the insulating washer significantly increases the value of the breakdown voltage.
- the surface enclosed by the circumferential groove is conductive and is this conductive layer with the conductive 0 electrically connected layer of the groove.
- Embodiment is prevented that the partial discharges can arise at the contact surfaces between the component and the insulating washer.
- this groove can also be filled with conductive material.
- the value of the breakdown voltage can be significantly improved by using ribs and grooves in the area of the creepage distance.
- This value of the breakdown voltage can be increased by approximating the cross-sectional shape of the grooves and ribs of the first or second insulating washer to the so-called Rogowski profile.
- Another advantage of the first and the second insulating washer in one of the above-mentioned embodiments of the surface is that the size of the insulating washer is reduced without influencing the flashover resistance.
- Figure 1 illustrates a cross section of a first insulating washer according to the invention
- Figure 2 shows a cross section of a second insulating washer according to the invention
- FIG. 3 shows an advantageous embodiment of the insulating disk according to FIG. 2
- FIG. 4 shows a cross section of a third insulating disk according to the invention
- FIGS. 5 to 8 each show advantageous embodiments of the insulating disk according to FIG. 4.
- FIG. 1 shows a cross section through a first insulating disk 2 according to the invention, arranged between two components 4 and 6.
- This insulating washer 2 is made of electrically insulating and heat-conducting material.
- Inorganic ceramics for example beryllium oxide (BeO), aluminum oxide (AlpOg), aluminum nitrite (A1N), silicon nitrite (SiN), thermoplastic materials, for example polystyrene, PA, PTFE, thermosetting plastics, for example glass fiber reinforced epoxy resins, can be used as the material. be used. These materials can also be combined as desired using joining processes.
- Semiconductors, in particular power semiconductors, and cooling sockets are provided as components 4 and 6.
- One side 8 of this insulating disk 2 is provided with a circumferential rib 26 which is arranged in the edge region 16 of this insulating disk 2. Instead of this one circumferential rib 26, a circumferential groove 24 can also be provided.
- this insulating disk 2 in the edge region 16 in such a way that a plurality of circumferential ribs 26 and / or a plurality of circumferential grooves 24 are provided.
- the alternative suggestions of this first insulating pane 2 according to the invention are not shown in more detail for reasons of clarity.
- FIG. 2 shows a cross section through a second insulating disk 2 according to the invention, which is likewise arranged between two components 4 and 6.
- the material of this second insulating washer 2 does not differ from the first insulating washer 2 according to FIG. 1. The difference lies in the surface design of the insulating washer 2.
- the component 4 which can be a semiconductor or a cooling box
- the cross section of the recess 10 is equal to the cross section of the component 4 to be countersunk.
- FIG. 3 shows a detail of an advantageous embodiment of the insulating disk 2 according to FIG. 2.
- the cross section of the recess 10 is larger by a gap dimension d than the cross section of the component 4 and the walls 12 and the bottom 13 of the recess 10 are coated with a conductive layer 14.
- the edge region 16 of the insulating disk 2 is designed as a circumferential rib 18 in such a way that this circumferential rib 18 simultaneously determines the dimensions of the recess 10.
- the thickness d of the edge area 16 can also decrease towards the outside, the contour of this edge area 16 resulting from the stress division on the surface 8 of the edge area 16.
- the thickness d of the edge region 16 or the thickness d 2 of the circumferential rib 18 must be so great that the edge field strength around the component 4 in the insulating disk 2 is applied to a medium, usually air, oil, potting, for the surrounding medium. compatible value (2 ... 3 kV / mm for air) is reduced.
- the thickness d 1 of the bottom 13 of the recess 10 can be reduced in such a way until the dielectric strength given by the insulating material is reached at the edge of the recessed component 4. As a result, the thermal resistance of the insulating pane 2 has also been minimized.
- FIG. 4 shows a cross section through a third insulating disk 2 according to the invention, arranged between two components 4 and 6. In terms of material, this insulating disk 2 does not differ from the first insulating disk 2 according to FIG. 1. The difference lies in the surface design of the insulating disk 2.
- One side 8 of this insulating disk 2 is provided with a circumferential groove 20, the walls of which have a conductive layer 14 are provided. Instead of this conductive layer 14, the circumferential groove 20 can also be filled with conductive material.
- FIG. 5 shows an advantageous embodiment of the third insulating disk 2 according to the invention according to FIG. 4.
- the surface of the side 8 of the insulating disk 2 that is touched by the component 4 is coated with a conductive layer 22.
- This conductive layer 22 is electrically conductively connected to the conductive layer 14 of the circumferential groove 20. This additional conductive layer 22 prevents partial discharges on the contact surfaces of the component 4 and the insulating disk 2.
- the thickness distribution of the third insulating washer 2 according to FIG. 4 is as follows: In the area below the component 4, ie the area enclosed by the circumferential groove, the insulating washer 2 has a thickness d 2 as the insulating washer 2 2 at the edge region 16.
- the thickness d of the insulating disk 2 below the groove .20 can have the same value as the thickness d of the bottom 13 of the recess 10 of the second insulating disk 2.
- the third insulating disk 2 designed in this way is preferably used for components 4 and 6 which have a disk-shaped cross-sectional area.
- the insulating disk 2 can be lapped to achieve certain values of parallelism and flatness of the surface, without the values for partial discharge. y adversely affect voltage voltage and breakdown voltage.
- the circumferential groove 20 is to be positioned around the component 4 such that a cross-sectional area enclosed by the outer edge of the groove 20 is at least larger than the cross-sectional area of a contact surface of the component 4 (FIGS. 4 and 4) 5).
- the insulating pane 2 may be facing side of the device 4 of any shape ( Figure 6), as long as it does not exceed the outer periphery of the 'groove 20th
- FIGS. 7 and 8 each show a further advantageous embodiment of the third insulating disk 2 according to FIG. 4.
- the edge region 16 is provided with at least one further circumferential groove 24 (FIG. 7) and with at least one circumferential rib 26 (FIG 8) provided.
- the insulating disk 2 is provided with a plurality of ribs 26 and / or a plurality of circumferential grooves 24 in the area 16 of the creepage distances, the value of the breakdown voltage can advantageously be increased. An effective value of the breakdown voltage of 10 kV / 60 sec is thereby achieved.
- the shape of the ribs 18 and 26 and the groove 24 can be any. In order to be able to fully utilize the insulating washer 2, the cross-sectional areas must be approximated
- Another advantage of the insulating washer 2 in the surface embodiment according to FIG. 1 or FIG. 3 is that the pane size is reduced without influencing the rollover strength.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Insulating Bodies (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/244,073 US5576578A (en) | 1991-11-15 | 1991-12-13 | High voltage insulating disk |
JP4500980A JPH07501179A (ja) | 1991-11-15 | 1991-12-13 | 高圧絶縁円板 |
JP1995600003U JPH08500003U (ja) | 1991-11-15 | 1991-12-13 | 高圧絶縁円板 |
EP92901976A EP0612439A1 (de) | 1991-11-15 | 1991-12-13 | Hochspannungs-isolierscheibe |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEG9114268.7U | 1991-11-15 | ||
DE9114268U DE9114268U1 (de) | 1991-11-15 | 1991-11-15 | Hochspannungs-Isolierscheibe |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1993010560A1 true WO1993010560A1 (de) | 1993-05-27 |
Family
ID=6873342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE1991/000973 WO1993010560A1 (de) | 1991-11-15 | 1991-12-13 | Hochspannungs-isolierscheibe |
Country Status (6)
Country | Link |
---|---|
US (1) | US5576578A (de) |
EP (1) | EP0612439A1 (de) |
JP (2) | JPH07501179A (de) |
CA (1) | CA2123574A1 (de) |
DE (1) | DE9114268U1 (de) |
WO (1) | WO1993010560A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994023454A1 (en) * | 1993-03-31 | 1994-10-13 | Siemens Components, Inc. | A pedestal lead frame for supporting a semiconductor chip |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4237763C2 (de) * | 1992-11-09 | 1996-01-25 | Siemens Ag | Vorrichtung zur isolierten Befestigung von wärmeerzeugenden Halbleiter-Bauteilen |
TW408453B (en) * | 1997-12-08 | 2000-10-11 | Toshiba Kk | Package for semiconductor power device and method for assembling the same |
AUPQ679100A0 (en) * | 2000-04-07 | 2000-05-11 | Novapharm Research (Australia) Pty Ltd | Process and composition for cleaning medical instruments |
DE60132397T2 (de) | 2000-06-01 | 2009-01-22 | Matsushita Electric Industrial Co., Ltd., Kadoma-shi | Verfahren zur Herstellung eines thermisch leitenden Substrats mit Leiterrahmen und Wärmestrahlungsplatte |
ATE458392T1 (de) * | 2005-12-13 | 2010-03-15 | B2 Electronic Gmbh | Anordnung mit zumindest einem elektronischen bauteil |
CN105934095B (zh) * | 2016-06-28 | 2019-02-05 | Oppo广东移动通信有限公司 | Pcb板及具有其的移动终端 |
US11112555B2 (en) | 2019-09-30 | 2021-09-07 | Nichia Corporation | Light-emitting module with a plurality of light guide plates and a gap therein |
US11561338B2 (en) | 2019-09-30 | 2023-01-24 | Nichia Corporation | Light-emitting module |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2369773A1 (fr) * | 1976-10-27 | 1978-05-26 | Bbc Brown Boveri & Cie | Montage de composant a semi-conducteurs de grande puissance |
GB2024514A (en) * | 1978-06-30 | 1980-01-09 | Bbc Brown Boveri & Cie | Housing for high-power semiconductor component |
WO1988008615A1 (en) * | 1987-04-24 | 1988-11-03 | Unisys Corporation | Cavity-up-cavity-down multichip integrated circuit package |
EP0408228A2 (de) * | 1989-07-11 | 1991-01-16 | Oxley Developments Company Limited | Keramische Packung und Bauelement |
EP0412545A2 (de) * | 1989-08-11 | 1991-02-13 | Hitachi Maxell Ltd. | IS-Packung und IS-Karte, die diese einschliesst |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE343717B (de) * | 1968-04-01 | 1972-03-13 | Asea Ab | |
US3662086A (en) * | 1970-05-25 | 1972-05-09 | Nat Beryllia Corp | Semiconductor package |
US3874546A (en) * | 1973-10-11 | 1975-04-01 | Pinckney Molded Plastic Inc | Convertible container-pallet |
JPS5969951A (ja) * | 1982-10-14 | 1984-04-20 | Toshiba Corp | パツケ−ジ封止方法 |
JPS6151947A (ja) * | 1984-08-22 | 1986-03-14 | Mitsubishi Electric Corp | 半導体装置 |
JPS629649A (ja) * | 1985-07-08 | 1987-01-17 | Nec Corp | 半導体用パツケ−ジ |
DE8614173U1 (de) * | 1986-05-24 | 1989-08-10 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Einrichtung zur zweiseitigen potentialfreien Kühlung von Scheibenzellenhalbleitern |
JPH077810B2 (ja) * | 1986-06-06 | 1995-01-30 | 株式会社日立製作所 | 半導体装置 |
JPS6432654A (en) * | 1987-07-29 | 1989-02-02 | Hitachi Chemical Co Ltd | Substrate for loading semiconductor element |
JPS6442135A (en) * | 1987-08-07 | 1989-02-14 | Mitsubishi Electric Corp | Semiconductor device |
DE3740233A1 (de) * | 1987-11-27 | 1989-06-08 | Asea Brown Boveri | Kuehldose zum abfuehren der verlustwaerme von halbleitern |
DE3937130A1 (de) * | 1989-11-08 | 1990-05-31 | Asea Brown Boveri | Dosenkuehlvorrichtung |
-
1991
- 1991-11-15 DE DE9114268U patent/DE9114268U1/de not_active Expired - Lifetime
- 1991-12-13 JP JP4500980A patent/JPH07501179A/ja active Pending
- 1991-12-13 JP JP1995600003U patent/JPH08500003U/ja active Pending
- 1991-12-13 EP EP92901976A patent/EP0612439A1/de not_active Ceased
- 1991-12-13 WO PCT/DE1991/000973 patent/WO1993010560A1/de not_active Application Discontinuation
- 1991-12-13 US US08/244,073 patent/US5576578A/en not_active Expired - Fee Related
- 1991-12-13 CA CA002123574A patent/CA2123574A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2369773A1 (fr) * | 1976-10-27 | 1978-05-26 | Bbc Brown Boveri & Cie | Montage de composant a semi-conducteurs de grande puissance |
GB2024514A (en) * | 1978-06-30 | 1980-01-09 | Bbc Brown Boveri & Cie | Housing for high-power semiconductor component |
WO1988008615A1 (en) * | 1987-04-24 | 1988-11-03 | Unisys Corporation | Cavity-up-cavity-down multichip integrated circuit package |
EP0408228A2 (de) * | 1989-07-11 | 1991-01-16 | Oxley Developments Company Limited | Keramische Packung und Bauelement |
EP0412545A2 (de) * | 1989-08-11 | 1991-02-13 | Hitachi Maxell Ltd. | IS-Packung und IS-Karte, die diese einschliesst |
Non-Patent Citations (5)
Title |
---|
PATENT ABSTRACTS OF JAPAN, Band 10, Nr. 213 (E-422)(2269), 25. Juli 1986; & JP,A,61 051 947 (MITSUBISHI) 14. März 1986, siehe Zusammenfassung * |
PATENT ABSTRACTS OF JAPAN, Band 13, Nr. 240, (E-767), 6. Juni 1989; & JP,A,1 042 135 (MITSUBISHI) 14. Februar 1989 * |
PATENT ABSTRACTS OF JAPAN, Band 4, Nr. 56 (E-008), 25. April 1980; & JP,A,55 024 464 (HITACHI) 21. Februar 1980 * |
PATENT ABSTRACTS OF JAPAN, Band 5, Nr. 176 (E-81)(848), 12. November 1981; & JP,A,56 103 435 (NIPPON DENKI) 18. August 1981, siehe Zusammenfassung * |
PATENT ABSTRACTS OF JAPAN, Band 8, Nr. 176 (E-260)(1613), 14. August 1984; JP,A,59 069 951 (TOSHIBA) 20. April 1984, siehe Zusammenfassung * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994023454A1 (en) * | 1993-03-31 | 1994-10-13 | Siemens Components, Inc. | A pedestal lead frame for supporting a semiconductor chip |
US5506425A (en) * | 1993-03-31 | 1996-04-09 | Siemens Components, Inc. | Semiconductor device and lead frame combination |
Also Published As
Publication number | Publication date |
---|---|
EP0612439A1 (de) | 1994-08-31 |
CA2123574A1 (en) | 1993-05-27 |
US5576578A (en) | 1996-11-19 |
DE9114268U1 (de) | 1992-01-09 |
JPH07501179A (ja) | 1995-02-02 |
JPH08500003U (ja) | 1996-07-02 |
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