WO1992019785A1 - Procede et dispositif de traitement d'articles dans du plasma a decharge de gaz - Google Patents

Procede et dispositif de traitement d'articles dans du plasma a decharge de gaz Download PDF

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Publication number
WO1992019785A1
WO1992019785A1 PCT/RU1992/000088 RU9200088W WO9219785A1 WO 1992019785 A1 WO1992019785 A1 WO 1992019785A1 RU 9200088 W RU9200088 W RU 9200088W WO 9219785 A1 WO9219785 A1 WO 9219785A1
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WO
WIPO (PCT)
Prior art keywords
product
gas
processed
vacuum
plasma
Prior art date
Application number
PCT/RU1992/000088
Other languages
English (en)
Russian (ru)
Inventor
Leonid Pavlovich Sablev
Anatoly Afanasievich Andreev
Sergei Nikolaevich Grigoriev
Alexandr Sergeevich Metel
Original Assignee
Nauchno-Proizvodstvennoe Predpriyatie 'novatekh'
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU4938768 external-priority patent/RU2010031C1/ru
Priority claimed from SU915002528A external-priority patent/RU1834911C/ru
Priority claimed from SU5002413 external-priority patent/RU2022056C1/ru
Application filed by Nauchno-Proizvodstvennoe Predpriyatie 'novatekh' filed Critical Nauchno-Proizvodstvennoe Predpriyatie 'novatekh'
Priority to EP92911913A priority Critical patent/EP0583473B1/fr
Priority to US08/146,043 priority patent/US5503725A/en
Priority to DE69227313T priority patent/DE69227313T2/de
Priority to JP4511099A priority patent/JPH06506986A/ja
Publication of WO1992019785A1 publication Critical patent/WO1992019785A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32055—Arc discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation

Definitions

  • the process is relatively high. - 2 - voltage on the product (400-1000 ⁇ ), it is connected to a smoldering discharge in an arc (especially from the initial stage of the process). Non-hazardous arcs cause erosion of the processed product, but 5 are still larger than the direct spray. Decreases in arcing are achieved by the degree of conduction of the process (reduction of the current and voltage of the discharge). However, this measure leads to a decrease in productivity.
  • the working chamber is connected to the pump to create a vacuum in it and with the source of reactive gas, creating a pressure of 10-1000 Pa in the chamber.
  • the method includes heating the product-casing, placed in a working chamber-anode in the environment of the reactive gas (nitrogen mixed with the chemical), in the process
  • the reactive gas nitrogen mixed with the chemical
  • nda-, ⁇ susches ⁇ vlyayuschee vysheu ⁇ azanny s ⁇ s ⁇ b and s ⁇ de ⁇ zhaschee is ⁇ chni ⁇ ⁇ s ⁇ yann ⁇ g ⁇ ⁇ a, ny ele ⁇ iches ⁇ i associated with ⁇ a ⁇ d ⁇ m and an ⁇ d ⁇ , ⁇ meschennymi in s ⁇ edu ⁇ ea ⁇ tsi ⁇ nn ⁇ g ⁇ ⁇ i ⁇ nizhenya ⁇ m gas pressure (g ⁇ , ⁇ , 68783).
  • the indicated device is equipped with a working camera, and a quick-processed product is placed in a convenient mode.
  • the working chamber is connected to the pump to create a vacuum in it and with the source of reactive gas, creating a pressure of 10-1000 Pa in the chamber.
  • a smoldering discharge is created between the battery and the anode.
  • the intensification of a smoldering discharge (an increase in the discharge current) is carried out with the help of it. We pour it off.
  • An individual food source serves as a source of spiraling. Acceleration of electrics for gas gas activation is carried out by one more source of direct current, the quick-connect to the mains is plugged in
  • ⁇ na ⁇ alivae maya s ⁇ i ⁇ al not ⁇ bes ⁇ echivae ⁇ d ⁇ s ⁇ a ⁇ chnuyu for ⁇ b ⁇ ab ⁇ i b ⁇ ly ⁇ i ⁇ mass ele ⁇ n ⁇ v feed products, ⁇ e ⁇ mu v ⁇ emya ⁇ b ⁇ ab ⁇ i * in chas ⁇ n ⁇ s ⁇ i, v ⁇ emya nag ⁇ eva products za ⁇ yagivae ⁇ sya, ch ⁇ ⁇ iv ⁇ di ⁇ ⁇ ⁇ izv ⁇ di ⁇ eln ⁇ s ⁇ i ⁇ b ⁇ ab ⁇ i reduction products.
  • Izves ⁇ ya ⁇ us ⁇ ys ⁇ v ⁇ ⁇ b ⁇ ab ⁇ i for manufacturing ⁇ lazme gaz ⁇ v ⁇ g ⁇ ⁇ az ⁇ yada, ⁇ susches ⁇ vlyayuschee vysheu ⁇ azayany s ⁇ s ⁇ b and s ⁇ de ⁇ zhaschee is ⁇ chni ⁇ ⁇ s ⁇ yann ⁇ g ⁇ ⁇ a, ele ⁇ iches ⁇ i svya- coupled with in ⁇ eg ⁇ aln ⁇ - ⁇ l ⁇ dnym ⁇ a ⁇ d ⁇ m and an ⁇ d ⁇ m, ⁇ ye ⁇ azmescheny in va ⁇ uumn ⁇ y ⁇ ame ⁇ e in s ⁇ ede ⁇ ab ⁇ cheg ⁇ ⁇ i ⁇ nizhenn ⁇ m gas pressure ( ⁇ Z, ⁇ , 4734178) .
  • ⁇ ⁇ sya ⁇ vu nas ⁇ yascheg ⁇ iz ⁇ b ⁇ e ⁇ eniya was ⁇ l ⁇ zhena task ⁇ az ⁇ ab ⁇ i s ⁇ s ⁇ ba ⁇ b ⁇ ab ⁇ i products ⁇ lazme gaz ⁇ v ⁇ g ⁇ * ⁇ az ⁇ yada in ⁇ m would v ⁇ zbuzhdazh ⁇ a ⁇ y va ⁇ uumn ⁇ -dug ⁇ v ⁇ y 5 ⁇ az ⁇ yad, ch ⁇ ⁇ zv ⁇ lil ⁇ would s ⁇ ani ⁇ chis ⁇ u ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ b ⁇ aba ⁇ yvaem ⁇ g ⁇ products and ⁇ asshi ⁇ i ⁇ Te ⁇ n ⁇ l ⁇ giches ⁇ ie v ⁇ z- m ⁇ zhn ⁇ s ⁇ i and s ⁇ zdanie us ⁇ ys ⁇ va ⁇ b ⁇ ab ⁇ i products in ⁇ lazme gaz ⁇ v ⁇ g ⁇ ⁇ az ⁇ y
  • the main heating of the processed product for the operation of heaters can also be carried out and the floating potential of the product is driven by the availability of gas
  • the product is free-flowing when the product is fused to a
  • V-devices for the separation of electric equipment can be installed with the option of returning to a non-profitable place.
  • Means for the separation of elec- trons can be carried out in the form of a vane diaphragm, vials that are simply interposed are not compatible with
  • Means for the separation of elec- trons can be made in the form of a disk installed with a negative voltage chamber.
  • an integral and clean housing has been installed 5 flaxes with the possibility of cornering the room for a working environment of 180 °
  • ch ⁇ by in us ⁇ ys ⁇ ve was ⁇ edusm ⁇ ena ⁇ as ⁇ y- trolled mid ⁇ eya having tsen ⁇ aln ⁇ e ⁇ ve ⁇ s ⁇ ie, s ⁇ edinennaya with ⁇ itsa ⁇ elnym ⁇ lyus ⁇ m iyadividualn ⁇ g ⁇ is ⁇ chni ⁇ a ⁇ s ⁇ yann ⁇ -0 g ⁇ ⁇ a and ⁇ azmeschennaya between s ⁇ eds ⁇ v ⁇ m for se ⁇ a ⁇ atsii ele ⁇ - ⁇ n ⁇ z ⁇ d ⁇ lni ⁇ elnym an ⁇ d ⁇ m.
  • the sprayed target may be located in conjunction with an optional anode.
  • the sprayed target was executed in the form of a 5 disk, which has a central result.
  • an additional aeode be produced in the form of a ring, and, therefore, the area of the transverse section of the area - 9 - the ring of the additional anode was the same as the larger area of the cross section of the area of dispersal of the streamers.
  • a sprayed target may also be performed as a fully-equipped cistern, and the area of a direct spray is a central result of a sprayed target.
  • the sprayed target was produced as a collection of the other arched plates, installed in the process, if necessary,
  • FIG. 4 is a general diagram of another embodiment of a device for fig. 3; 5 Fig. 5- Generally, one of the options for gaining the advantage of a device for fig. Fig.6 - the general scheme of gaining another version of the performance of the device igg; Fig. 7 - the general scheme of another embodiment of the device for fig. 6; Paragraph 8- Generally, one of the reasons for the performance of the implementation of the provisions of Paragraph 4 and 4; FIG. 3.
  • FIG. 8 General terms of the other embodiment of the device, as agreed to the invention of FIG. 8; Fig. ⁇ - Generally, one of the options for gaining ownership of the device is Fig. 9; sig. ⁇ - a general view of yet another version of the superior device ⁇ ⁇ Consequently ⁇ ⁇ ⁇ ⁇ ; ph.
  • FIG. 3- Generally, one of the variants of the performance of the device is agreed to by the invention, for example, and 4; Fig. 4-section of the dependence on the industrial productivity of the processed product from the depth of the layer for the quick service, the obtained performance.
  • the method of processing products in a plasma of a gas discharge is concluded by the way between the anode :. and iya ⁇ eg ⁇ aln ⁇ - ⁇ l ⁇ dnym ⁇ a ⁇ d ⁇ m dv ⁇ e ⁇ u ⁇ eyacha ⁇ y va ⁇ uumn ⁇ -dug ⁇ v ⁇ ' ⁇ ⁇ az ⁇ yad, ⁇ v ⁇ dya ⁇ va ⁇ uumn ⁇ - ⁇ lazmeyanuyu ⁇ b ⁇ ab ⁇ u ⁇ b ⁇ aba ⁇ yvaem ⁇ g ⁇ products ⁇ u ⁇ em eg ⁇ nag ⁇ eva d ⁇ ⁇ ab ⁇ chey ⁇ em ⁇ e ⁇ a ⁇ u ⁇ y and vyde ⁇ zh ⁇ u eg ⁇ in zadann ⁇ m ⁇ em ⁇ e ⁇ a ⁇ u ⁇ n ⁇ g ⁇ ezhime in s ⁇ ede ⁇ ab ⁇ cheg ⁇ gas.
  • the two-phase vacuum is separated between the gas-oil and gas-oil - II - ⁇ raz ⁇ yad).
  • the last stage is created by the initialization of the working gas by elec- trons, which are sintered from the metal-gas phase of the degree of plasma of a vacuum discharge.
  • the non-mainstream part-way is controlled by thermally-cooled products.
  • the working process in this process must not be warmed up, if the process is eroded. This temperature depends on the temperature of the melting material. High values of a discharged elec- tric discharge are similar to arcing discharges due to the increase in the degree of initialization of the plasma of the gas, and, therefore,
  • the electrical supply is small, and it is generally known that electric spraying of the product is not sprayed • the appliance is not damaged
  • the positive user potential which is supplied by the cathode and anode, makes up a few tens of volts (usually below 100 B). With this, the capacity allocated to the anode can reach 60% of the total available storage capacity. When the potential on the product is not possible, it is not possible to remove some spots that cause erosion5 of the processed product.
  • ⁇ sduchae, ⁇ gda ne ⁇ b ⁇ dim ⁇ s ⁇ ani ⁇ is ⁇ dny: Class chis ⁇ y l ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ b ⁇ aba ⁇ yvaemyzh izdezhy ⁇ n ⁇ si ⁇ eln ⁇ neb ⁇ lyi ⁇ l weight, ⁇ dn ⁇ m of va ⁇ ian ⁇ v vy ⁇ lneniya s ⁇ s ⁇ ba, s ⁇ glasn ⁇ iz ⁇ b ⁇ e ⁇ eniyu, nag ⁇ ev ⁇ b ⁇ aba ⁇ yvaem ⁇ g ⁇ products d ⁇ ⁇ ab ⁇ chey ⁇ em ⁇ e ⁇ a ⁇ u ⁇ y ⁇ susches ⁇ vlyayu ⁇ lu ⁇ em ⁇ dachi ⁇ l ⁇ zhi ⁇ eln ⁇ - g ⁇ ⁇ entsiala on ⁇ b ⁇ aba ⁇ yvaem ⁇ e izdezhe and zyde ⁇ zh ⁇
  • the temperature range in the plasma of the gas discharge is realized at the floating potential on the processed product.
  • Floating potential accepts all kinds of food, located in the plasma and on the external source of food. • . not - 14 - voltage is applied. Due to the large mobility of electric power (in comparison with the ions), it is self-propelled that it is in good condition that it is in good condition If the product is ironed, if it is removed from voltage, it may be warmed up if it is in good condition, and it must be disposed of at a reasonable price.
  • the vessel of the negative floating potential is lacking, so that the foreign bomb caused by it will reduce the dispersion of the material. (Floating potential in the plasma below the spray of material).
  • the method of the device is agreed upon by heating the product to be manufactured by the manufacturer and securing the product from a given geotherm. Ingevale in the plasma of a gas discharge is provided by the floating and floating generation on the processed product.
  • Lsted 2 has a screen 10, which works on stage 2 as a non-working II and as a working 12 for part 2.
  • Part 13 separates the volume of the camera I into two parts 17 and 18.
  • Part 18 is the working volume of the camera I, and 5 part 17 is optional and intimidates for emissions. effects of part 18.
  • the device is equipped with a patented device, which is attached to the fig. 2, performed a similar device ⁇ ⁇ ко ⁇ ⁇ ⁇ .
  • the device is equipped with an anode 22, installed on a non-hazardous, non-hazardous installation.
  • anode 22 installed on a non-hazardous, non-hazardous installation.
  • - 20 - e ⁇ e ⁇ n ⁇ with v ⁇ zm ⁇ zhn ⁇ s ⁇ yu ⁇ as ⁇ l ⁇ zheniya ⁇ b ⁇ aba ⁇ yvaem ⁇ g ⁇ ⁇ zde ⁇ iya 5 ⁇ a ⁇ d ⁇ m between 2 and 13 s ⁇ eds ⁇ m an ⁇ d ⁇ m 22 dvu ⁇ zitsi ⁇ nny ⁇ e ⁇ e ⁇ lyuchagel 23 s ⁇ edinenny with is ⁇ chni- ⁇ m 9 ⁇ ya ⁇ n ⁇ g ⁇ g ⁇ a an ⁇ d ⁇ m and 3 and 22 and 24 bl ⁇ 5 5sh ⁇ avleniya dvu ⁇ zitsi ⁇ nnym ⁇ e ⁇ e ⁇ lyucha ⁇ e ⁇ em 23 v ⁇ d ⁇
  • the variant of the invention is agreed upon by the company, which is available on php. 3, Similar to the device of the Russian Federation; and 2.
  • E ⁇ va ⁇ ian ⁇ vy ⁇ lneniya us ⁇ ys ⁇ a naib ⁇ lee tseles ⁇ - ⁇ b ⁇ azn ⁇ is ⁇ lz ⁇ va ⁇ for ⁇ vysheniya izn ⁇ s ⁇ s ⁇ y ⁇ s ⁇ i izde- ly, ⁇ shedshi ⁇ va ⁇ uumn ⁇ - ⁇ azmennuyu in chas ⁇ n ⁇ s ⁇ i ⁇ imi ⁇ - Yu ⁇ e ⁇ miches ⁇ uyu ⁇ b ⁇ ab ⁇ u, ⁇ u ⁇ em ⁇ sleduyuscheg ⁇ applying iz n ⁇ s ⁇ s ⁇ y ⁇ g ⁇ ⁇ y ⁇ iya of s ⁇ edineniya mega ⁇ la from ⁇ g ⁇ izg ⁇ vlen in ⁇ eg ⁇ aln ⁇ ⁇ dny ⁇ a ⁇ d-2, with We will work with gas.
  • Part of the process generator is a version of the device that is identical to the previous version of
  • the embodiment of the device ⁇ for fig. 4 for reacting the method, according to the invention, has been carried out by a similar device ⁇ ⁇ ⁇ ⁇ ⁇ .
  • camera I located on the outside of the camera I.
  • camera I is installed with cylinder 44 between the 14th part of the 13th unit and the 45th part of the building. In 44, in the immediate vicinity, there is a disc of 50 with a total of 5 tuples;
  • ⁇ as ⁇ ylyae maya Misha Hb 52 ⁇ isyvaem ⁇ m ⁇ a ⁇ iange ⁇ Y ⁇ - neniya usg ⁇ ysg ⁇ a ⁇ y ⁇ lne to form ⁇ dis ⁇ a 54 imeyuscheg ⁇ tse ng ⁇ a ⁇ n ⁇ e ⁇ g ⁇ e ⁇ s ⁇ ie 53.
  • the sprayed target 52 is connected to a fully-fledged direct source, with the best available source 55, which is emitted 56, which is connected to a second-hand transmitter.
  • DIGITAL DEVICE ⁇ executed analogous device igg. 9.
  • FIG. 10 (Fig. 10) was performed in the form of a full cylinder 58, anode 22 was fitted in the form of a ring 59, and medium 13 for the recovery of the disease was performed in the form of a disk 60, a 61
  • Eg ⁇ va ⁇ ian ⁇ us ⁇ ys ⁇ va tseles ⁇ b ⁇ azn ⁇ is ⁇ z ⁇ va ⁇ in ⁇ ensi ⁇ i ⁇ atssh ⁇ ⁇ tsessa for applying izn ⁇ s ⁇ y ⁇ g ⁇ ⁇ y ⁇ iya of ma ⁇ e ⁇ iala ⁇ as ⁇ ylyaem ⁇ y target 52 ⁇ a izde- 5 Lie 47 ⁇ shedshee va ⁇ uumn ⁇ - ⁇ lazmennuyu in chas ⁇ n ⁇ s ⁇ i ⁇ imi ⁇ - ⁇ e ⁇ miches ⁇ uyu ⁇ b ⁇ ab ⁇ u. - 26 - in part of the technology for the implementation of a vacuum-flame treatment, including heating and baking, this process is performed similarly to the previous one.
  • FIG. 12 _ The device, according to the invention, which implements the Patent No. 5 and the present invention is illustrated in FIG. 12 _; a similar analog device was used.
  • Eg ⁇ va ⁇ iang us ⁇ ys ⁇ va zhela ⁇ eln ⁇ is ⁇ lz ⁇ a ⁇ for ⁇ lucheniya vys ⁇ aches ⁇ enny ⁇ u ⁇ chnyayuschi ⁇ ⁇ y ⁇ y, ⁇ s ⁇ u ⁇ i ⁇ a ⁇ m ⁇ ns ⁇ u ⁇ ivn ⁇ m ⁇ y ⁇ lnenii target 52 ⁇ ez ⁇ snizhae ⁇ sya ve ⁇ ya ⁇ n ⁇ s ⁇ v ⁇ zni ⁇ n ⁇ voniya dug ⁇ vy ⁇ ⁇ az- ⁇ yad ⁇ v at its ⁇ ve ⁇ n ⁇ s ⁇ i, s ⁇ ed ⁇ a ⁇ eln ⁇ , is ⁇ lyuchae ⁇ sya ⁇ ya ⁇ enie ⁇ a ⁇ eln ⁇ y ⁇ azy in nan ⁇ si. ⁇ . on the product 47 sales.
  • E ⁇ va ⁇ ian ⁇ vy ⁇ lneniya us ⁇ ys ⁇ a tseles ⁇ b ⁇ azn ⁇ is ⁇ lz ⁇ va ⁇ ⁇ i ⁇ susches ⁇ vlenii nag ⁇ eva woode Leah 5 and e g ⁇ ⁇ yde ⁇ zhni ⁇ i ⁇ lavayuschem ⁇ entsia ⁇ e for ⁇ vyshe Nia e ⁇ e ⁇ iv- 5 n ⁇ s ⁇ i ⁇ tsessa va ⁇ uumn ⁇ - ⁇ lazmenn ⁇ y ⁇ b ⁇ ab ⁇ i woode ly, ⁇ e imusches ⁇ venn ⁇ from diele ⁇ iches ⁇ i ⁇ ma ⁇ e ⁇ ial ⁇ v.
  • a negative stage 2 receives a voltage from a source 9 of a continuous source.
  • a vacuum system that does not burn (it is not shown on the drawing, it is not known to be used).
  • chg ⁇ electronic throttles are limited to a large number of geophysical and physical properties; For such high values, the gas plasma ⁇ hour 18 of the chamber I has a high degree of initiation (dozens of percentages), and it is quite high.
  • the anode of the 3rd section is 5 the latest of the heating. ⁇ n ⁇ l ⁇ em ⁇ e ⁇ a ⁇ u ⁇ y ⁇ izv ⁇ di ⁇ sya with ⁇ m ⁇ schyu ⁇ e ⁇ m ⁇ a ⁇ y 19 za ⁇ e ⁇ le nn ⁇ y on iz d ⁇ lai 5.
  • product 5 is maintained at a predetermined gem-reprocessing unit, while there is a short supply of gas, it is saturated with gas 5 - 29 - the process of vacuum-plasma, in particular chemical-thermal treatment, is illustrated.
  • gas 5 - 29 - the process of vacuum-plasma, in particular chemical-thermal treatment, is illustrated.
  • ⁇ Fortgrican ** To reduce the discharge rate, the discharge is the smallest possible stable existence of the discharge; below 5 discharge, there is an unstable one.
  • step 2 a variety of different metals are used, and so dozens of tens of amperes.
  • This product is a 5th product and a vacuum-plasma-processed, original source class is available. This is essentially essential when a vacuum-plasma, in particular, chemical-thermo-processing of products, is used to process the product,
  • the device is out of 5 on 5, it is possible to use the same way as it is and the device is on, but for this I have to wait 23.
  • ⁇ e ⁇ ; Including 25 - 31 - is located at the position of P, and the vacuum circuitry (voltage, voltage) is inadequate so that there is no 5 P ⁇ i ga ⁇ m s ⁇ s ⁇ be nag ⁇ eva and vyde ⁇ zh ⁇ i in zadann ⁇ m ⁇ em ⁇ e ⁇ a ⁇ u ⁇ n ⁇ m in ⁇ e ⁇ vale m ⁇ zhn ⁇ ⁇ em ⁇ e ⁇ a ⁇ u ⁇ u with d ⁇ sgag ⁇ chn ⁇ y d ⁇ ya ⁇ a ⁇ gi ⁇ i- s ⁇ e ⁇ enyu ⁇ chn ⁇ s ⁇ i ⁇ dtse ⁇ yaiva ⁇ , vyde ⁇ zhivaya ⁇ a ⁇ ame ⁇ y va ⁇ uumn ⁇ -dug ⁇ v ⁇ g ⁇ ⁇ az ⁇ yada ⁇ s ⁇ yannymi on ne ⁇ b ⁇ dim ⁇ m u ⁇ vne, ⁇ eg ⁇ mu ⁇ adae ⁇ in ne ⁇
  • the previous process is a vacuum-plasma, in particular a chemical-protected process, there is a
  • Kompensating unit 4 source 37 available paths for e ⁇ g ⁇ ⁇ e ⁇ vedeniya ⁇ tsessa nag ⁇ eva articles 5 ⁇ ⁇ l ⁇ zhigeln ⁇ m ⁇ entsiale ⁇ e ⁇ e ⁇ lyuchagel 25 of ⁇ l ⁇ zhe- Nia I ⁇ e ⁇ ev ⁇ digsya in ⁇ zhenie P, ⁇ esg ⁇ az ⁇ yad ⁇ e ⁇ vv ⁇ digsya with an ⁇ da an ⁇ d 3 to 22 and 4 de ⁇ zhagel ⁇ ds ⁇ e- dinyae ⁇ sya ⁇ e ⁇ e ⁇ lyuchagelem 38 ⁇ isg ⁇ chni ⁇ u 37.
  • Drill testing was carried out while drilling in steel, containing, andass.%: C-0.36; 8 ⁇ -0.2; ⁇ -0.5; Cr - ⁇ ; It is the rest, with the following drilling mode: 0 - the number of operations - 8430 rpm,
  • the average increase in exhaustion rate was #80 #. 5 ⁇ us ⁇ ys ⁇ ve, iz ⁇ b ⁇ azhenya ⁇ m on ⁇ ig.5, ⁇ i v ⁇ zbuzhdenii va ⁇ uumn ⁇ -dug ⁇ v ⁇ g ⁇ ⁇ az ⁇ yada ⁇ a ⁇ d ⁇ m between 2 and 3 an ⁇ d ⁇ m i ⁇ - us me ⁇ alla, ⁇ as ⁇ s ⁇ anyayuschiesya with ⁇ ab ⁇ chey ⁇ ve ⁇ n ⁇ s ⁇ i 12 ⁇ a ⁇ da 2 ⁇ ⁇ yam ⁇ lineynym ⁇ ae ⁇ iyam in Part I 18 ⁇ bema ⁇ ame ⁇ y not ⁇ adayu ⁇ .
  • Pa ⁇ ame ⁇ y ⁇ tsessa az ⁇ i ⁇ vaniya ⁇ a ⁇ tsialn ⁇ e pressure az ⁇ a - 1,30x10 ⁇ Pa, ⁇ va ⁇ uumn ⁇ dug ⁇ v ⁇ g ⁇ ⁇ az ⁇ ya-da-0 60 ⁇ , ⁇ in s ⁇ len ⁇ ide 49 ⁇ dbi ⁇ alsya ⁇ a ⁇ y value ch ⁇ - would na ⁇ yazhenie ⁇ a ⁇ d ⁇ m between 2 and 22 an ⁇ d ⁇ m s ⁇ s ⁇ avlyal ⁇ 80 ⁇ , v ⁇ emya ⁇ lucheniya az ⁇ i ⁇ vanya ⁇ g ⁇ a layer with a thickness of 15 ⁇ m was 12 minutes.
  • the expanded target 52 (disc 54) is made from the material of the acquisition.
  • 52 When supplied to a sprayed target, 52 is highly porous and has a negative potential of 57 The dusted material is deposited on the 47th site, resulting in a tamper-resistant spray.
  • a mixture of gases consisting of argoya and nitrogen is used.
  • the device is designed to perform and intensify the process of applying the spray on item 47, which, in fact, has a vacuum, in particular. To process, and to increase the uniformity of applying to the thickness.
  • 3.7 mkm / h - product 47 is installed in the center of the target 52; 5 3.0 ⁇ m / h - version 47 is installed in the upper part of the target 52 for the direction of the electric current of the plasma.
  • the device is equipped with FIG. 12 and 12 and allows you to intensify and 0 intensify the process of applying spray to the products 47, which have been evacuated by the plasma.
  • the concentration of the target 52 ⁇ y ⁇ lnenie target 52 as iz ⁇ zh ⁇ vanyay ⁇ ⁇ dna ⁇ d ⁇ ug ⁇ y dug ⁇ b ⁇ azny ⁇ ⁇ las ⁇ in 66 snizhae ⁇ ve ⁇ ya ⁇ n ⁇ s ⁇ v ⁇ zni ⁇ n ⁇ veniya dug ⁇ vy ⁇ ⁇ az ⁇ yad ⁇ v at its ⁇ ve ⁇ n ⁇ s ⁇ i and ⁇ a ⁇ sleds ⁇ vie, is ⁇ lyu- chae ⁇ sya v ⁇ zm ⁇ zhn ⁇ s ⁇ ⁇ yavleniya ⁇ a ⁇ el me ⁇ alla ⁇ i ⁇ as ⁇ ylenii0 target 52.
  • the device is quicker to increase and intensify the process of spraying the product, which results in 5 vacuum-related, especially
  • a bundle of source 67 source parts is handled by the manufacturer. It is published 5 and is designed to operate, activate and heat. Due to the high uniformity of the accessory of the accelerated parts of the cross section of the bundle, it is also more efficient to keep the cooler.
  • Izves ⁇ n ⁇ , ch ⁇ ele ⁇ - 5 ⁇ nnaya b ⁇ mba ⁇ di ⁇ v ⁇ a ⁇ ve ⁇ n ⁇ s ⁇ i Do not disrupt the performance of the class; 0 ⁇ zm ⁇ zhn ⁇ s ⁇ ⁇ vedeniya in ⁇ ensivn ⁇ g ⁇ ⁇ tsessa va ⁇ uumn ⁇ - ⁇ lazmeyan ⁇ y ⁇ b ⁇ ab ⁇ i ⁇ i ⁇ lavayuschem ⁇ entsiale without ⁇ dachi na ⁇ yazheniya on izdezhya ⁇ zv ⁇ lyae ⁇ ⁇ susches ⁇ vlya ⁇ ⁇ tsess without ⁇ n ⁇ lya ⁇ em ⁇ s ⁇ a ⁇ u ⁇ y on izdeliya ⁇ , ch ⁇ ⁇ s ⁇ benn ⁇ su ⁇ tses ⁇ - venn ⁇ ⁇ i ⁇ b ⁇ ab ⁇ e mel ⁇ azme ⁇ ny ⁇ izdezhy
  • P ⁇ vedenie ⁇ tsessa va ⁇ uumn ⁇ - ⁇ lazmenn ⁇ y ⁇ b ⁇ a- b ⁇ i ⁇ i ⁇ l ⁇ zhi ⁇ eln ⁇ m ⁇ entsiale ⁇ zv ⁇ lyae ⁇ is ⁇ lyuchi ⁇ z ⁇ zm ⁇ zhn ⁇ s ⁇ v ⁇ zni ⁇ ya ⁇ veniya dug ⁇ vy ⁇ ⁇ az ⁇ yad ⁇ v on izdeliya ⁇ (za ⁇ zhdeniya on izdezhya ⁇ ⁇ a ⁇ dny ⁇ ⁇ ya ⁇ en, ch ⁇ in sv ⁇ yu ⁇ che- ⁇ ed, ⁇ zv ⁇ lyae ⁇ ves ⁇ i ⁇ tsess va ⁇ uumn ⁇ - ⁇ lazmenn ⁇ y ⁇ b ⁇ a-5 b ⁇ i in ⁇ i "aln ⁇ . ⁇ .
  • the device which implements the patented method, possesses 5 high reliability, due to the fact that it is completely free of heat, it costs 300 ° C.

Abstract

Un procédé de traitement d'articles dans du plasma à décharge de gaz se caractérise en ce qu'entre une anode (3) et une cathode froide solidaire (2) est générée une décharge à arc sous-vide à deux phases, le plasma ayant une phase de métal-gaz et une phase de gaz mutuellement séparées. On obtient la phase de gaz du plasma par ionisation du gaz de traitement avec des ions séparés de la phase de métal-gaz du plasma. L'article traité (5) est ensuite chauffé jusqu'à la température de traitement puis il est conditionné dans cet intervalle de température. A cet effet, le dispositif est doté d'un moyen (13) situé dans la zone de la cathode (2), impénétrable par les ions métal générés par la cathode (2) et destiné à assurer une séparation des électrons et de la phase de métal-gaz du plasma. Dans un mode de réalisation particulier, le moyen (13) se compose d'un ensemble de plaques en forme de V (14).
PCT/RU1992/000088 1991-04-29 1992-04-23 Procede et dispositif de traitement d'articles dans du plasma a decharge de gaz WO1992019785A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP92911913A EP0583473B1 (fr) 1991-04-29 1992-04-23 Procede et dispositif de traitement d'articles dans du plasma a decharge de gaz
US08/146,043 US5503725A (en) 1991-04-29 1992-04-23 Method and device for treatment of products in gas-discharge plasma
DE69227313T DE69227313T2 (de) 1991-04-29 1992-04-23 Verfahren und vorrichtung zur behandlung von bauteilen in einem gasentladungsplasma
JP4511099A JPH06506986A (ja) 1991-04-29 1992-04-23 ガス放電プラズマ中での製品の処理方法と装置

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
RU4938768 1991-04-29
SU4938768 RU2010031C1 (ru) 1991-04-29 1991-04-29 Вакуумная печь
SU915002528A RU1834911C (ru) 1991-09-11 1991-09-11 Способ обработки изделий в установках вакуумно-плазменного нанесени покрытий
SU5002413 RU2022056C1 (ru) 1991-09-11 1991-09-11 Установка для нанесения покрытий
RU5002413 1991-09-11
RU5002528 1991-09-11
RU5008180 1991-11-11
RU5008181 1991-11-11
RU5018360 1991-12-24
RU5024440 1992-01-28
RU5024441 1992-01-28
RU5027759 1992-02-18

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WO1992019785A1 true WO1992019785A1 (fr) 1992-11-12

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JP (1) JPH06506986A (fr)
WO (1) WO1992019785A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994016117A1 (fr) * 1992-12-30 1994-07-21 Nauchno-Proizvodstvennoe Predpriyatie 'novatekh' Dispositif de traitement d'articles sous vide au plasma
EP0645461A1 (fr) * 1993-08-27 1995-03-29 Hughes Aircraft Company Procédé et dispositif de traitement thermique par réchauffage au moyen de plasma et d'électrons et au moyen d'un jet de refroidissement solide/gazeux
US8241468B2 (en) 2004-12-13 2012-08-14 United Technologies Corporation Method and apparatus for cathodic arc deposition of materials on a substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006111930A (ja) * 2004-10-15 2006-04-27 Nissin Electric Co Ltd 成膜装置

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WO1987002072A1 (fr) * 1985-09-30 1987-04-09 Union Carbide Corporation Appareil et procede pour le depot par vaporisation a l'arc d'un revetement dans une chambre sous vide
EP0225680A1 (fr) * 1985-11-15 1987-06-16 Andal Corp. Procédé pour le dépôt en phase vapeur à l'aide d'arc électrique
US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface

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US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
WO1987002072A1 (fr) * 1985-09-30 1987-04-09 Union Carbide Corporation Appareil et procede pour le depot par vaporisation a l'arc d'un revetement dans une chambre sous vide
EP0225680A1 (fr) * 1985-11-15 1987-06-16 Andal Corp. Procédé pour le dépôt en phase vapeur à l'aide d'arc électrique

Non-Patent Citations (1)

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See also references of EP0583473A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994016117A1 (fr) * 1992-12-30 1994-07-21 Nauchno-Proizvodstvennoe Predpriyatie 'novatekh' Dispositif de traitement d'articles sous vide au plasma
EP0645461A1 (fr) * 1993-08-27 1995-03-29 Hughes Aircraft Company Procédé et dispositif de traitement thermique par réchauffage au moyen de plasma et d'électrons et au moyen d'un jet de refroidissement solide/gazeux
US8241468B2 (en) 2004-12-13 2012-08-14 United Technologies Corporation Method and apparatus for cathodic arc deposition of materials on a substrate

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