WO1991009984A1 - Procede d'enduction - Google Patents

Procede d'enduction Download PDF

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Publication number
WO1991009984A1
WO1991009984A1 PCT/EP1990/002270 EP9002270W WO9109984A1 WO 1991009984 A1 WO1991009984 A1 WO 1991009984A1 EP 9002270 W EP9002270 W EP 9002270W WO 9109984 A1 WO9109984 A1 WO 9109984A1
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WO
WIPO (PCT)
Prior art keywords
substrate
irradiated
layer
areas
radiation
Prior art date
Application number
PCT/EP1990/002270
Other languages
German (de)
English (en)
Inventor
Hilmar Esrom
Original Assignee
Asea Brown Boveri Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri Aktiengesellschaft filed Critical Asea Brown Boveri Aktiengesellschaft
Publication of WO1991009984A1 publication Critical patent/WO1991009984A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0036—Laser treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
    • C04B41/455—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction
    • C04B41/4556—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application the coating or impregnating process including a chemical conversion or reaction coating or impregnating with a product reacting with the substrate, e.g. generating a metal coating by surface reduction of a ceramic substrate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5093—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with elements other than metals or carbon
    • C04B41/5096—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/515—Other specific metals
    • C04B41/5155—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0548—Masks
    • H05K2203/056—Using an artwork, i.e. a photomask for exposing photosensitive layers

Definitions

  • the invention relates to a method for coating substrates in accordance with the preamble of claim 1.
  • Such methods are used where the surface of a substrate is to be partially or completely metallized or to be provided with an alloy or a dielectric layer.
  • the object of the invention is to demonstrate a method with which the metallization and / or the application of a layer to a substrate can be carried out in a simple manner.
  • the method according to the invention it is possible to partially or completely metallize the surface of a substrate which is made, for example, of aluminum nitride.
  • a substrate which is made, for example, of aluminum nitride.
  • UV radiation of a defined wavelength and pulse rate
  • the nitrogen can be released in the irradiated area of the substrate surface.
  • the surface of the substrate is formed in the irradiated areas after the exposure to pure aluminum.
  • An alloy, a dielectric or a metal in the form of Cu, Ni, Au etc. can then be applied to these areas in electroless, wet-chemical metallization baths. Furthermore, all surface areas that are exposed after the irradiation
  • SET BLADE pure aluminum are formed, are reinforced with other methods, for example with a conventional thermal CVD or by electrolytic metallization.
  • a substrate made of silicon nitride so that the irradiated surface areas of the substrate are formed by pure silicon.
  • irradiating ceramic substrates which are made from chemical compounds which have at least one slightly subliming component. The slightly subliming component is released by the irradiation, and the irradiated surface regions of the substrate are then formed by the remaining components of the chemical compound.
  • FIG. 4 shows a substrate provided with a contact.
  • Fig. 1 shows a flat substrate 1, which is made of aluminum nitride (A1N) in the embodiment shown here.
  • A1N aluminum nitride
  • the substrate 1 is irradiated with UV radiation. At a defined distance above the substrate
  • EP BLADE Surface 1A therefore has a UV high-power emitter 2 in the form of an excimer laser or an excimer emitter.
  • the detailed description of such a high-power radiator 2 can be found in EP-OS 0 254-110.
  • the high-power radiator 2, hereinafter referred to briefly as an excimer radiator consists of a discharge space (not shown here) which is delimited by metal electrodes cooled on one side (not shown here) and a dielectric (likewise not shown here) and filled with an inert gas or gas mixture.
  • the dielectric and the second electrode lying on the surface of the dielectric facing away from the discharge space are transparent to the radiation generated by silent electrical discharge.
  • the high-power radiator 2 works with quasi-pulsed operation. In the exemplary embodiment shown here, it is filled with krypton fluoride and can therefore generate UV radiation in the range from 240 to 270 nm. In order to generate UV radiation having a wavelength nm 60-165, an inert gas filling 'of helium or argon is used. With a xenon gas filling, a wavelength between 160 and 190 nm can be generated.
  • the wavelength is 180 to 200 nm, while with a gas mixture of xenon and chlorine a UV wavelength of 300 to 320 nm can be achieved.
  • the excimer laser has a pulse rate of 100 to 200 Hz and the pulse energy is 100 to 200 mJ.
  • the corresponding wavelengths 193 nm, 248 nm, 308 nm and 351 nm can be generated with the gas mixtures Ar / - F, Kr / F, XeCl and Xe / F.
  • a mask 3 is arranged between the surface 1A and the excimer laser 2. This points 3D culverts.
  • the passages 3D are arranged exactly where irradiation of the substrate surface 1 is desired.
  • the nitrogen of the AIN compound is released.
  • the irradiated areas IB are formed by pure aluminum after the end of the irradiation.
  • the non-irradiated areas IN of the substrate surface 1A are further formed by aluminum nitride. If the entire surface of the substrate is to have an aluminum layer, the irradiation is carried out without the mask 3.
  • IB for example a layer of copper, nickel
  • Gold or zinc with a thickness of up to 30 ⁇ m
  • a substrate 1, which is provided with such layers 4 is shown in FIG. 3.
  • the areas IN which consist of aluminum nitride, remain free of any coating.
  • electrolytic metallization can also be used for coating or reinforcement.
  • a current can be passed continuously or pulsed through the areas IB. In this way, a thermal CVD process can also be carried out locally in a CVD reactor.
  • the areas IB consisting of aluminum can also be locally oxidized or nitrided.
  • the regions IB can be formed as conductor tracks for a circuit by the targeted irradiation of the surface 1A.
  • E BLOCK Ren of certain areas of these traces these can be provided at desired points with breaks for the electrical signal routing.
  • the substrate 1 consisting of aluminum nitride can also be pierced.
  • the aid of focusing optics in the form of lenses and an XY shifting device, it is also possible to write AI webs, the ALN substrate being moved relative to the focused UV light beam.
  • the beam coming from the excimer laser can be focused in such a way that the bore 5 shown in FIG. 4 is formed with the desired diameter.
  • the substrate 1 is made entirely of aluminum nitride.
  • the nitrogen present in the boundary wall of the bore 5 is released, so that the boundary wall after the completion of the bore 5 is formed exclusively by aluminum. If the bore 5 is in direct electrical contact with an area IB on the surface 1A of the substrate 1, this area IB is connected in an electrically conductive manner to the layer 10 via the wall of the bore 5, which layer 10 is directly on the underside of the Substrate 1 adjoins.
  • the method according to the invention is not only applicable to substrates made of aluminum nitride. Rather, it is possible to irradiate substrates made of silicon nitride (Si-N.) with the excimer laser. This also releases the nitrogen in the irradiated surface areas (not shown here) of this substrate. There is also the possibility of irradiating ceramic substrates which are formed by a chemical compound which has a slightly subliming component. The slightly subliming component is released by the radiation. Thieves- radiated surface areas of the substrate are then formed by the remaining components of the chemical compound. Since both the aluminum layers and the layers formed in other substrates form an atomic bond with the layers underneath, this results in a very high level of adhesive strength.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

L'invention se rapporte à un procédé pour l'enduction d'une surface de substrat (1A). A cet effet, la surface (1A) du substrat (1) est exposée à un rayonnement UV de longueur d'onde déterminée. Le substrat (1) employé est constitué d'un composé chimique comportant au moins un composant facilement oxydable ou facilement sublimable. Une exposition partielle ou totale de la surface (1A) du substrat libère le composant facilement oxydable ou facilement sublimable du composé chimique de telle manière que les zones exposées (1B) de la surface (1A) soient formées par les composants restants du composé chimique. Ces zones peuvent ensuite être renforcées au moyen d'une couche de renforcement (4) appliquée par des procédés d'enduction classiques.
PCT/EP1990/002270 1989-12-22 1990-12-20 Procede d'enduction WO1991009984A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19893942472 DE3942472A1 (de) 1989-12-22 1989-12-22 Beschichtungsverfahren
DEP3942472.3 1989-12-22

Publications (1)

Publication Number Publication Date
WO1991009984A1 true WO1991009984A1 (fr) 1991-07-11

Family

ID=6396137

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1990/002270 WO1991009984A1 (fr) 1989-12-22 1990-12-20 Procede d'enduction

Country Status (4)

Country Link
JP (1) JPH04505481A (fr)
CA (1) CA2048669A1 (fr)
DE (1) DE3942472A1 (fr)
WO (1) WO1991009984A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4342258A1 (de) * 1993-12-10 1995-06-14 Resma Gmbh Verfahren zur Erzeugung elektrisch leitender Bereiche an keramischen Werkstücken
DE4401612A1 (de) * 1994-01-20 1995-07-27 Resma Gmbh Verfahren und Vorrichtung zur Erzeugung elektrisch leitender Bereiche auf Metallverbindungen enthaltenden isolierenden Keramikwerkstücken

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EP0501278B1 (fr) * 1991-02-28 1998-09-30 Texas Instruments Incorporated Procédé de fabrication d'un masque
DE4141365A1 (de) * 1991-12-14 1993-06-17 Mathias Dr Herrmann Siliziumnitridsinterkoerper mit modifizierter oberflaeche und verfahren zur herstellung dieser modifizierten oberflaeche
TW260806B (fr) * 1993-11-26 1995-10-21 Ushio Electric Inc
US5460693A (en) * 1994-05-31 1995-10-24 Texas Instruments Incorporated Dry microlithography process
DE10137763C2 (de) * 2001-08-02 2003-08-14 Siemens Ag Verfahren zur Oberflächenvorbehandlung einer zu beschichtenden Oberfläche eines Substrates mit einem Beschichtungsmaterial
EP1845170A3 (fr) * 2006-04-12 2007-11-21 LPKF Laser & Electronics AG Procédé de fabrication d'une structure conductrice tout comme structure conductrice ainsi fabriquée
DE102006017630A1 (de) * 2006-04-12 2007-10-18 Lpkf Laser & Electronics Ag Verfahren zur Herstellung einer Leiterbahnstruktur sowie eine derart hergestellte Leiterbahnstruktur
TWI613177B (zh) * 2011-11-16 2018-02-01 製陶技術股份有限公司 製造一基材的方法
DE102017223647A1 (de) 2017-12-22 2019-06-27 Robert Bosch Gmbh Verfahren zur Herstellung eines elektronischen Bauteils, elektronisches Bauteil, SMD Bauelement und Schaltungsträgeranordnung
DE102017223646A1 (de) 2017-12-22 2019-06-27 Robert Bosch Gmbh Verfahren zur Herstellung einer Schaltungsträgeranordnung und Schaltungsträgeranordnung
DE102017223648A1 (de) 2017-12-22 2019-06-27 Robert Bosch Gmbh Verfahren zur Ausbildung von Leiterbahnen aus Aluminium durch Umwandlung von Aluminiumnitrid in Aluminium und Schaltungsträgeranordnung mit Leiterbahnen aus Aluminium auf einem Trägersubstrat

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3256109A (en) * 1962-12-20 1966-06-14 Berger Carl Metal formation within a substrate
GB1107305A (en) * 1964-05-14 1968-03-27 Texas Instruments Inc Dielectric bodies with selectively formed conductive portions, and composites thereofwith semiconductor material
GB2162546A (en) * 1984-07-31 1986-02-05 Us Energy Vacuum depositing silver on silicon enriched glass surface
US4572843A (en) * 1984-05-30 1986-02-25 Kabushiki Kaisha Toshiba Method for producing a capacitor with precise capacitance
EP0227371A1 (fr) * 1985-12-11 1987-07-01 Kabushiki Kaisha Toshiba Substrats céramiques et méthodes de leur production
EP0230128A2 (fr) * 1985-12-31 1987-07-29 AT&T Corp. Méthode de fabrication d'un dessin conducteur sur un substrat polymère
WO1989002697A1 (fr) * 1987-09-14 1989-03-23 Hughes Aircraft Company Procede de metallisation induit par la dissociation d'une ceramique a base de nitrure d'aluminium
GB2217349A (en) * 1988-03-29 1989-10-25 Univ Hull Vapour deposited self-sealing ceramic coatings
US4933206A (en) * 1988-08-17 1990-06-12 Intel Corporation UV-vis characteristic writing in silicon nitride and oxynitride films
EP0254111B1 (fr) * 1986-07-22 1992-01-02 BBC Brown Boveri AG Dispositif de rayonnement ultraviolet

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3256109A (en) * 1962-12-20 1966-06-14 Berger Carl Metal formation within a substrate
GB1107305A (en) * 1964-05-14 1968-03-27 Texas Instruments Inc Dielectric bodies with selectively formed conductive portions, and composites thereofwith semiconductor material
US4572843A (en) * 1984-05-30 1986-02-25 Kabushiki Kaisha Toshiba Method for producing a capacitor with precise capacitance
GB2162546A (en) * 1984-07-31 1986-02-05 Us Energy Vacuum depositing silver on silicon enriched glass surface
EP0227371A1 (fr) * 1985-12-11 1987-07-01 Kabushiki Kaisha Toshiba Substrats céramiques et méthodes de leur production
EP0230128A2 (fr) * 1985-12-31 1987-07-29 AT&T Corp. Méthode de fabrication d'un dessin conducteur sur un substrat polymère
EP0254111B1 (fr) * 1986-07-22 1992-01-02 BBC Brown Boveri AG Dispositif de rayonnement ultraviolet
WO1989002697A1 (fr) * 1987-09-14 1989-03-23 Hughes Aircraft Company Procede de metallisation induit par la dissociation d'une ceramique a base de nitrure d'aluminium
GB2217349A (en) * 1988-03-29 1989-10-25 Univ Hull Vapour deposited self-sealing ceramic coatings
US4933206A (en) * 1988-08-17 1990-06-12 Intel Corporation UV-vis characteristic writing in silicon nitride and oxynitride films

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Band. 15, Nr. 2, Juli 1972 M Anschel: "LASER-PLATING SYSTEM FOR PRINTED CIRKUITRY ", *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4342258A1 (de) * 1993-12-10 1995-06-14 Resma Gmbh Verfahren zur Erzeugung elektrisch leitender Bereiche an keramischen Werkstücken
DE4401612A1 (de) * 1994-01-20 1995-07-27 Resma Gmbh Verfahren und Vorrichtung zur Erzeugung elektrisch leitender Bereiche auf Metallverbindungen enthaltenden isolierenden Keramikwerkstücken

Also Published As

Publication number Publication date
DE3942472A1 (de) 1991-06-27
JPH04505481A (ja) 1992-09-24
CA2048669A1 (fr) 1991-06-23

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