WO1990001801A3 - Appareil electronique integre monolithique - Google Patents

Appareil electronique integre monolithique Download PDF

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Publication number
WO1990001801A3
WO1990001801A3 PCT/DE1989/000510 DE8900510W WO9001801A3 WO 1990001801 A3 WO1990001801 A3 WO 1990001801A3 DE 8900510 W DE8900510 W DE 8900510W WO 9001801 A3 WO9001801 A3 WO 9001801A3
Authority
WO
WIPO (PCT)
Prior art keywords
influenced
area
frequency alternating
operating
waves
Prior art date
Application number
PCT/DE1989/000510
Other languages
German (de)
English (en)
Other versions
WO1990001801A2 (fr
Inventor
Gerhard Conzelmann
Robert Kainer
Gerhard Fiedler
Peter Jochen
Original Assignee
Bosch Gmbh Robert
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert filed Critical Bosch Gmbh Robert
Publication of WO1990001801A2 publication Critical patent/WO1990001801A2/fr
Publication of WO1990001801A3 publication Critical patent/WO1990001801A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Des lignes relient ledit appareil à l'extérieur, dont une au moins (01, 02) sert à l'alimentation dudit appareil électronique en tension de fonctionnement ou courant de fonctionnement et/ou une au moins est destinée aux entrées de signaux et/ou aux sorties de signaux. Des tensions alternatives haute fréquence peuvent être influencées sur les lignes par des champs magnétiques extérieurs haute fréquence, les amplitudes de ces tensions alternatives étant semblables ou supérieures au potentiel momentanément appliqué, ce qui fait qu'au moins une (3) des jonctions PN reliées directement ou indirectement à une ligne (01) et bloquées dans la zone de travail est polarisée en sens passant par la tension alternative haute fréquence influencée dans la zone des demi-ondes négatives, ce qui génère des courants directs continus moyens, qui injectent des courants minoritaires dans le matériau semiconducteur entourant la jonction PN (3) correspondante, qui sont au moins en partie captés par au moins une des composantes du circuit intégré monolithique et dont le point de fonctionnement dynamique est décalé, ce qui entraîne une défaillance de l'appareil électronique. La polarisation momentanée en sens passant de la jonction PN (3) bloquée qui se produit dans la zone des demi-ondes négatives de la tension alternative haute fréquence influencée est ainsi évitée dans le câblage grâce à une diode (5).
PCT/DE1989/000510 1988-08-10 1989-08-02 Appareil electronique integre monolithique WO1990001801A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE3827052 1988-08-10
DEP3827052.8 1988-08-10
DE3924278A DE3924278A1 (de) 1988-08-10 1989-07-22 Elektronisches, monolithisch integriertes geraet
DEP3924278.1 1989-07-22

Publications (2)

Publication Number Publication Date
WO1990001801A2 WO1990001801A2 (fr) 1990-02-22
WO1990001801A3 true WO1990001801A3 (fr) 1990-04-05

Family

ID=25870957

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1989/000510 WO1990001801A2 (fr) 1988-08-10 1989-08-02 Appareil electronique integre monolithique

Country Status (5)

Country Link
EP (2) EP0404863A1 (fr)
JP (1) JP3167306B2 (fr)
KR (1) KR0168323B1 (fr)
DE (2) DE3924278A1 (fr)
WO (1) WO1990001801A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4133245C2 (de) * 1991-10-08 2001-09-20 Bosch Gmbh Robert Bipolare monolithisch integrierte Schaltung
US5514612A (en) * 1993-03-03 1996-05-07 California Micro Devices, Inc. Method of making a semiconductor device with integrated RC network and schottky diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582467A (en) * 1978-12-18 1980-06-21 Toshiba Corp Mis type integrated circuit with schottky clamp diode

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2492165A1 (fr) * 1980-05-14 1982-04-16 Thomson Csf Dispositif de protection contre les courants de fuite dans des circuits integres
IT1197279B (it) * 1986-09-25 1988-11-30 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato, in particolare in circuiti di pilotaggio di carichi induttivi e/o capacitivi

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582467A (en) * 1978-12-18 1980-06-21 Toshiba Corp Mis type integrated circuit with schottky clamp diode

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
A.S. Sedra et al.: "Microelectronic Circuits", 1982, Holt Saunders International Editions, (New York, US) Seiten 122, 236 siehe Seite 122, Zeilen 5, 6 und Seite 236, Zeilen 2-5 *
Electronics, Band 48, Nr. 15, 24. Juli 1975, (New York, US) "Buried moat stops negative swings", Seiten 31-32 siehe Seite 31, Spalte 1, Zeilen 9-14 und Spalte 3, Zeilen 29-37 *
IEEE Journal of Solid-State Circuits, Band SC-8, Nr. 6, Dezember 1973 W.F. Da vis: "Bipolar design considerations for the automotive environment", Seiten 419-427, siehe seite 422, Spalte 2, Zeilen 41-43 siehe Seite 423, Spalte 1, Zeilen 26-28 und Spalte 2, Zeilen 12-15 *
Patent Abstracts of Japan, Band 4, Nr. 130 (E-025), 12. September 1980; & JP-A-55 082 467 (TOSHIBA CORP.) 21. Juni 1980 *

Also Published As

Publication number Publication date
KR0168323B1 (ko) 1998-12-15
EP0645818A3 (fr) 1995-08-30
EP0645818A2 (fr) 1995-03-29
WO1990001801A2 (fr) 1990-02-22
DE58909881D1 (de) 2002-01-03
EP0645818B1 (fr) 2001-11-21
JPH03500473A (ja) 1991-01-31
DE3924278A1 (de) 1990-02-15
JP3167306B2 (ja) 2001-05-21
KR900702570A (ko) 1990-12-07
EP0404863A1 (fr) 1991-01-02

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