WO1989011735A1 - Materiau supraconducteur de ceramique oxydee et son procede de production - Google Patents

Materiau supraconducteur de ceramique oxydee et son procede de production Download PDF

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Publication number
WO1989011735A1
WO1989011735A1 PCT/DE1989/000321 DE8900321W WO8911735A1 WO 1989011735 A1 WO1989011735 A1 WO 1989011735A1 DE 8900321 W DE8900321 W DE 8900321W WO 8911735 A1 WO8911735 A1 WO 8911735A1
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WO
WIPO (PCT)
Prior art keywords
ceramic material
metal compounds
ions
temperature
bao
Prior art date
Application number
PCT/DE1989/000321
Other languages
German (de)
English (en)
Inventor
Claus Wüstefeld
Original Assignee
Wuestefeld Claus
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuestefeld Claus filed Critical Wuestefeld Claus
Priority to KR1019900700149A priority Critical patent/KR900702581A/ko
Publication of WO1989011735A1 publication Critical patent/WO1989011735A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4521—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing bismuth oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide

Definitions

  • the invention relates to a superconducting oxidic material with a partial lattice consisting of polarizable anions.
  • Oxidic ceramic material should be understood to mean a material which has a lattice structure usually formed by oxides, in which the O - ions form a partial lattice as polarizable anions. Typical representatives of such a supral
  • the ceramic materials are the lanthanum-barium-copper-oxides (LBCO) and yttrium-barium-copper-oxides (YBCO), the structure and properties of which are described in a paper by Williams et al in "Accounts of Chemical Research", vol. 21, no . 1 (1988), pages 1 to 7, have been described in detail and also include the superconductors developed by Bednorz and Müller (see Z. Phys. B 64 (1986) 189).
  • This ceramic material has a perovskite structure at least in some areas.
  • the term “oxidic ceramic material” should in no way be limited to these known substances and in particular also include those substances in which the oxygen that is possible according to the lattice structure is partially or completely replaced by other anions.
  • the invention has for its object to provide a superconducting ceramic material of the type mentioned, which has a perfectly reproducible crack temperature, which is higher than the certainly reproducible crack temperature of the previously known ceramic superconductors.
  • a ceramic material the anion partial lattice of which is at least partially Nitride fluoride is formed, whose N 3 - and F- ions each take the places of a 0 2 - ion, so that the (NF) - ion corresponds to two 0 2_ ions.
  • Ceramic materials which have a nitride fluoride perovskite structure.
  • Preferred ceramic materials have the formula
  • Ba ⁇ xLa ⁇ (l-slCU (Ny Fy0 ⁇ 4-2y)) with 0 ⁇ x ⁇ 1 and 0 ⁇ y ⁇ 2, as in particular
  • the invention also relates to a method for producing a superconducting, oxidic ceramic material, in particular a ceramic material, as has been described above.
  • a ceramic material can be produced by subjecting a plurality of metal compounds which, after a solid-state reaction at high temperatures, to an oxidic crystal structure with a partial lattice consisting of polarizable anions, are subjected to such a high-temperature solid-state reaction.
  • the invention consists in that at least one of the metal compounds used is a metal nitride fluoride.
  • the particular advantage of the method according to the invention is that by using a metal nitride fluoride the amount of nitride fluoride used and thus its effect on superconductivity can be metered very well, as a result of which the desired optimization of the properties leading to superconductivity and consequently also the reproducibility of a high transition temperature can be achieved is guaranteed. It is not even necessary for ceramic material to be formed in which, as stated above, oxygen ions are replaced by nitride and fluoride ions to a measurable extent, but structures are also possible in which the use of nitride fluoride has a stabilizing effect.
  • One embodiment of the invention provides that in addition to the metal compounds BaO, La ⁇ O3, Cu (II) 0, La2Cu (NF) ⁇ is also used as the mineralizer.
  • those metal compounds can be used with particular advantage which give a perovskite structure in which at least some of the two O 2 - ions are replaced by one (N F ) 4_ ion.
  • these metal compounds can be binary metal compounds, such as Ba ⁇ NF, La ⁇ O3 and Cu (II) 0, but also BaO, La2.NF) ⁇ , -s and Cu (II) 0.
  • the substances to be reacted are expediently kept at a temperature between 900 and 1000 ° C. for several hours.
  • ternary tall compounds are used.
  • ternary tall compounds they already have a perovskite structure and therefore react with each other to the end product in a shorter time and in a more reproducible manner.
  • superconducting ceramic materials with higher transition temperatures can also be realized.
  • Ba 3 Cu (II) ⁇ 4 and / or Ba 3 Cu (II) (NF) 2 are used as metal compounds Ba (Cu ⁇ 2) 2, Y2Cu3 (II) ⁇ 6, Y2CU3 (II) (NFO) 2, det verwen ⁇ .
  • the substances to be reacted are generally kept at a temperature of about 1100 ° C. for several hours.
  • the process according to the invention not only makes it possible to produce ceramic materials with a perovskite structure, but surprisingly also significantly improves the bismuth-strontium compounds mentioned above.
  • the metal compounds Sr (Bi ⁇ 3) 2 and Sr3Cu3 NFO) 2 are used and the solid-state reaction is carried out at a temperature up to 1200 ° C carried out in nitrogen atmosphere. This may cause the NF ions to leave the grid and leave vacant grid positions.
  • Sr3 C 3 (NFO) ⁇ a certain amount of Sr3 C 3 O ⁇ can advantageously be used the.
  • the ceramic material produced by this process had reproducible crack temperatures of over 100 K, although its formula composition does not differ from the material described by Schnering et al.
  • Example 1 was repeated, but using Ba ⁇ NF instead of BaO and without La2Cu (NF) 2 as a mineralizer.
  • the reaction took place at 900 ° C.
  • the result after anoxidation was Bao, 2 Lai, ⁇ Cu (No, 1 Fo, 1 O3, 8) with a transition temperature of about 70 K.
  • Example 3
  • Example 1 was repeated, but using
  • Ba (Cu (III) O ⁇ ) 2, Y2Cu (II) 3 (NFO) 2 and Ba3 Cu (II) (NF) 2 were used.
  • the use of these components has the advantage that they can be produced with great purity in a simple manner.
  • Ba (Cu (III) O2) 2 can be prepared from these components by heating the oxide mixtures in an oxygen atmosphere, whereas the other two components can be prepared by the following reactions:

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

Des matériaux supraconducteurs de céramique se composent soit de composés dont la grille anionique partielle est formée au moins en partie de fluorure de nitrure, tels que Ba0,2La1,8Cu(N0,1F0,1O3,8), Ba0, 2La1,8Cu(N1,35F1,35O1,3) or YBa2Cu3(N2F2O3-z) où 0 z 0,5, soit de substances ayant dans leur grille un nombre et une répartition définie de lacunes, obtenues par expulsion ultérieure des ions de NF, comme c'est le cas en particulier pour Sr2 Bi2 Cu Ox, où X 8. La température de transition des supraconducteurs ainsi obtenus est reproductible et dépasse en règle générale 100K.
PCT/DE1989/000321 1988-05-28 1989-05-23 Materiau supraconducteur de ceramique oxydee et son procede de production WO1989011735A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900700149A KR900702581A (ko) 1988-05-28 1989-05-23 초전도성의 산화된 세라믹 물질 및 그의 제조방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3818154.1 1988-05-28
DE3818154 1988-05-28

Publications (1)

Publication Number Publication Date
WO1989011735A1 true WO1989011735A1 (fr) 1989-11-30

Family

ID=6355310

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1989/000321 WO1989011735A1 (fr) 1988-05-28 1989-05-23 Materiau supraconducteur de ceramique oxydee et son procede de production

Country Status (3)

Country Link
KR (1) KR900702581A (fr)
AU (1) AU3577089A (fr)
WO (1) WO1989011735A1 (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0301690A2 (fr) * 1987-07-28 1989-02-01 Ovonic Synthetic Materials Company, Inc. Procédé d'alignement de grains discréts d'un matériau supraconducteur multigrain

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0301690A2 (fr) * 1987-07-28 1989-02-01 Ovonic Synthetic Materials Company, Inc. Procédé d'alignement de grains discréts d'un matériau supraconducteur multigrain

Also Published As

Publication number Publication date
AU3577089A (en) 1989-12-12
KR900702581A (ko) 1990-12-07

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