Classifications

• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C45/00—Amorphous alloys
  • C22C45/02—Amorphous alloys with iron as the major constituent

Definitions

• the present invention relates to a novel amorphous alloy and a method for producing the same, and more particularly, to an amorphous alloy having good corrosion resistance which can be used as an information recording material, a magnetic material, and the like, and a method for producing the same.
• alloys disordered structures that have lost the periodicity associated with the crystal structure give rise to certain types of uniformity. This is homogeneity without grain boundaries and child defects in the crystal structure, and homogeneity of the composition without precipitates and precipitation. As a result, in the amorphous structure, it is possible to realize an alloy whose composition is uniform and changes continuously over a wide composition. This means that alloys of elements that cannot be homogeneously mixed in the crystal structure can be realized in the amorphous structure.
• Japanese Patent Application Laid-Open No. 52-31703 discloses an amorphous alloy comprising the general formula Fe (iron) -R (where R is a rare earth element), for example, Fe—Tb. (Terbium) can change the magnetic properties such as the Curie point and coercive force by the continuous change of the composition of Tb in the amorphous state. But Z
• Te (ter) is selected from the group consisting of In, Sn, Pb, P, As and S with 30 at% or more. It is disclosed that a metal alloy containing at least one kind of element is used as a medium for drilling and recording by laser light.
• Te-based alloys have many phase transformations in the crystal structure and are used as many useful industrial materials due to their properties such as magnetic properties.
• Te is a semiconductor, and has characteristics that its thermal conductivity is extremely small as compared with general metals.
• it is used as a general-purpose optical writing light source. It has excellent characteristics such as strong absorption of semiconductor laser light at a wavelength of around 800nai.
• the combination of Fe and Te as an industrially useful material combination as described above is an Fe-Te-based alloy in which Fe is fixed in Fe. It is only possible to obtain a discrete crystal of a crystal having the composition of Fe Te and Fe Te 2 and a composite crystal showing segregation and / or precipitation.
• the present inventors diligently elucidated the solid solution of the continuous composition of Te with respect to Fe e and J, and as a result, after Te penetrated the lattice with respect to Fe, the composition exceeded a certain composition. And Fe—Te alloys were found to be in an amorphous state, forming an amorphous alloy that was continuously dissolved in the composition of Fe and Te. '
• the present invention specifies a novel amorphous alloy excellent in corrosion resistance, which is composed of Fe—Te, and has a Te content of 14 to 90 atoms 6, and specifies a method for producing the same. 2 It is an invention.
• the novel alloy according to the present invention is an alloy having an amorphous structure represented by the general formula Fewo-XTex. (Where X is atomic%). If a small amount of Te is added to the polycrystalline Fe, Te will penetrate into the Fe lattice, distorting the lattice. Further, it was confirmed that the structure was changed as follows depending on the content of Te. That is, it was confirmed that X was a solid solution of ⁇ -Fe (Te) up to about 7%. If () is larger than this, it becomes a transition region of the crystal structure in which the amorphous structure is scattered. When X is 12%, the lattice distortion is remarkable. The presence of a distorted crystalline state has been confirmed by X-ray resonance absorption (Mesber-Pair spectroscopy), which is sensitively sensitive and detects the change in magnetism. Up to about% It seems to be in the area.
• the amorphous alloy of the present invention has conductivity, and is advantageous for measures against static electricity when applied to information recording materials and the like.
• the optical characteristics approach the intrinsic optical characteristics of Te rather than the metallic characteristics together with the increase in the Te composition, for example, the semiconductor laser-light sensitivity near the wavelength of 800 ⁇ increases. .
• the amorphous alloy of the present invention has useful properties as an information recording material using magnetism, magnetomagnetism, light, or the like.
• the Te content of the Fe—Te amorphous alloy of the present invention is 14 to 90 atomic%, and is preferably 60 atomic% or less from the viewpoint of metallic characteristics, particularly conductivity. However, from the viewpoint of heat resistance, the content is preferably 50 atomic% or less.
• a Te content of 70-85% is preferred.
• the amorphous alloy of the present invention may contain a small amount of other elements as long as the amorphous properties are not impaired.
• other elements for example, Mo, Ti, Mn, W, Zr, Hf, and Cu contained in the Fe raw material.
• the amorphous alloy composed of Fe-Te of the present invention is a method for realizing rapid cooling at or above the so-called critical cooling rate under conditions where the structure is frozen before the alloy constituent elements are rearranged into crystals during alloy preparation. Created more.
• the most commonly used methods are known as the Gunn method, the piston-anvil method, the casting method, or the rolling method. This is a method in which a molten liquid is rapidly spread into a thin film on a metal plate 'and quenched to obtain an amorphous alloy sheet.
• these methods do not allow the amorphous phase to be formed because the melting points of Fe and Te are significantly different and the viscosity is low. Difficult.
• the amorphous alloy of the present invention is preferably prepared by a method of solidifying from the gas phase, that is, by a physical vapor deposition method such as a vacuum vapor deposition method or a sputtering method.
• a physical vapor deposition method such as a vacuum vapor deposition method or a sputtering method.
• vacuum evaporation multi-source evaporation or a combination of alloy sample and electron beam ripening, low frequency induction heating, resistance aging, flash evaporation, etc. is used.
• the multiple vapor deposition method requires multiple evaporation sources.
• the gold sample has problems such as the difference in vapor pressure ⁇ and the decomposition of the sample is large.
• the amorphous alloy comprising F e -T e of the present invention is particularly realized and produced by a sputtering method.
• a DC or RF two-pole or magnetron method, a facing target method, an ion beam method, and the like are used as the sputtering method.
• An atomic group of the binary element which is in a gaseous phase from an alloy composed of Fe and Te, a composite or a plurality of targets, etc. is deposited on the substrate through a quenching process.
• an Fe—Te amorphous alloy can be produced within the above-described composition range.
• the substrate used in the method of solidification from the 53 ⁇ 4 phase is not particularly limited, such as gold, cuffs, ceramics, and plastics.
• the sputtering method is particularly advantageous in application to information recording materials and the like in that a plastic substrate having low heat resistance is used and continuous formation is possible.
• the film composition of the obtained alloy film was Fee ⁇ , and according to the X-ray diffraction measurement, the diffraction peak showed a completely broad 'amorphous state'. That is, a desired Fe—Te amorphous alloy was obtained.
• Example 2 An alloy film having a different composition was formed under the same conditions as in Example 1 except that the number and the dispersion state of Te on the target were changed, and X-ray diffraction measurement was performed for each.
• Table III The results are shown in Table III.
• the materials made in Examples 2 to 7 were homogeneous Fe—Te amorphous alloys. Table 1
• a 1.5-thick glass plate to the substrate holder of the DC magnetron unit.
• a plurality of alloy films having different compositions were prepared by distributing a plurality of them on the upper surface and sputtering them under a 200 W pulse under a 4 Pa Ar atmosphere. The sputter speed was about 10 Asec and the film thickness was about 2,000 A.
• After the obtained alloy film was analyzed by X-ray diffraction, it was immersed in a 2 N HNO s solution. After immersion for 5 minutes under normal conditions, the alloy film was observed. The results are shown in Table 2. However, in the table, X indicates that the film was completely dissolved, ⁇ indicates that the film was slightly changed, and ⁇ indicates that there was no change. As shown in the examples, the amorphous alloy of the present invention shows excellent corrosion resistance.
• the amorphous alloy composed of Fe-Te in the present invention differs from the crystalline alloy in that the heterogeneity such as grain boundaries, precipitation, and segregation in the discrete composition is different from that of the crystalline alloy.
• the Fe—Te amorphous amorphous alloy of the present invention exhibits excellent characteristics that are industrially superior in an appropriate composition. For example, by adding Te to Fe, an alloy having excellent corrosion resistance can be obtained. Then, in a specific region, an amorphous alloy having excellent heat resistance can be obtained.
• the composition of the alloy it is possible to obtain a material whose magnetic properties are usually 'magnetically transformed' from ferromagnetic. Also, by adding Te, a material having a transition region where the electrical properties are metallic and semiconducting can be obtained. In addition, an Fe alloy material having good sensitivity to semiconductor laser light important in optical recording and capable of reversible recording can be obtained.
• the application of the amorphous alloy composed of F e -T e in the present invention is not limited to the above-mentioned application.
• the above-mentioned properties and the like may be used in combination.
• the application of the application of external energy such as ripening or light to crystallize a part or all of the substance to change its physical and / or chemical properties.
• This is useful, for example, as a high-density memory primary information material using the above-mentioned semiconductor laser light absorption.

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• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Physical Vapour Deposition (AREA)
• Thin Magnetic Films (AREA)

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• 1984
  • 1984-09-10 JP JP59188109A patent/JPS6167751A/ja active Granted
• 1985
  • 1985-09-09 DE DE8585904493T patent/DE3585682D1/de not_active Expired - Lifetime
  • 1985-09-09 EP EP85904493A patent/EP0193616B1/en not_active Expired
  • 1985-09-09 WO PCT/JP1985/000502 patent/WO1986001835A1/ja not_active Ceased
  • 1985-09-09 US US06/876,889 patent/US4707198A/en not_active Expired - Lifetime

Patent Citations (2)

Non-Patent Citations (1)

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