UST106101I4 - Structure of an improved bipolar transistor - Google Patents

Structure of an improved bipolar transistor Download PDF

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Publication number
UST106101I4
UST106101I4 US06/695,657 US69565785A UST106101I4 US T106101 I4 UST106101 I4 US T106101I4 US 69565785 A US69565785 A US 69565785A US T106101 I4 UST106101 I4 US T106101I4
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US
United States
Prior art keywords
conductivity type
epitaxial layer
region
base
small area
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US06/695,657
Inventor
Joseph R. Cavaliere
Cheng T. Horng
Richard R. Konian
Hans S. Rupprecht
Robert O. Schwenker
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from US06/126,611 external-priority patent/US4338138A/en
Application filed filed Critical
Priority to US06/695,657 priority Critical patent/UST106101I4/en
Application granted granted Critical
Publication of UST106101I4 publication Critical patent/UST106101I4/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H10D64/0113—
    • H10W10/0143—
    • H10W10/0145—
    • H10W10/17—

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  • Bipolar Transistors (AREA)

Abstract

An improved bipolar transistor structure formed in a very small area of a thin epitaxial layer on a planar surface of a silicon substrate of first conductivity type, said very small area of the thin epitaxial layer having vertical sidewalls extending to the planar surface of said substrate, said area of thin epitaxial layer containing in the order recited a shallow depth emitter region of a second conductivity type having an exposed planar surface, a shallow depth base region of said first conductivity type, and a shallow depth active collector region of said second conductivity type, an elongated region of said first conductivity type surrounding said emitter, base and active collector regions, said elongated region being contained within and coextensive with said vertical sidewalls of said small area of said thin epitaxial layer, whereby the base collector capacitance is materially reduced due to the very small area of the base-collector junction.
US06/695,657 1980-03-03 1985-01-28 Structure of an improved bipolar transistor Pending UST106101I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US06/695,657 UST106101I4 (en) 1980-03-03 1985-01-28 Structure of an improved bipolar transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/126,611 US4338138A (en) 1980-03-03 1980-03-03 Process for fabricating a bipolar transistor
US06/695,657 UST106101I4 (en) 1980-03-03 1985-01-28 Structure of an improved bipolar transistor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US06310671 Continuation 1981-10-13

Publications (1)

Publication Number Publication Date
UST106101I4 true UST106101I4 (en) 1985-12-03

Family

ID=26824857

Family Applications (1)

Application Number Title Priority Date Filing Date
US06/695,657 Pending UST106101I4 (en) 1980-03-03 1985-01-28 Structure of an improved bipolar transistor

Country Status (1)

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US (1) UST106101I4 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5017990A (en) * 1989-12-01 1991-05-21 International Business Machines Corporation Raised base bipolar transistor structure and its method of fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5017990A (en) * 1989-12-01 1991-05-21 International Business Machines Corporation Raised base bipolar transistor structure and its method of fabrication

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