US9881656B2 - Dynamic random access memory (DRAM) backchannel communication systems and methods - Google Patents

Dynamic random access memory (DRAM) backchannel communication systems and methods Download PDF

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Publication number
US9881656B2
US9881656B2 US14/591,056 US201514591056A US9881656B2 US 9881656 B2 US9881656 B2 US 9881656B2 US 201514591056 A US201514591056 A US 201514591056A US 9881656 B2 US9881656 B2 US 9881656B2
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dram
backchannel
line
drams
pin
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US20150194197A1 (en
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David Ian West
Michael Joseph Brunolli
Dexter Tamio Chun
Vaishnav Srinivas
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Qualcomm Inc
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Qualcomm Inc
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Priority to EP15701617.1A priority patent/EP3092568A1/en
Priority to CA2932653A priority patent/CA2932653A1/en
Priority to JP2016544821A priority patent/JP2017503303A/ja
Priority to TW104100580A priority patent/TW201543498A/zh
Priority to PCT/US2015/010583 priority patent/WO2015105948A1/en
Priority to KR1020167020653A priority patent/KR20160106096A/ko
Priority to CN201580004085.3A priority patent/CN105917312B/zh
Priority to BR112016015961A priority patent/BR112016015961A2/pt
Assigned to QUALCOMM INCORPORATED reassignment QUALCOMM INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: WEST, DAVID IAN, BRUNOLLI, MICHAEL JOSEPH, SRINIVAS, VAISHNAV, CHUN, DEXTER TAMIO
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1004—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's to protect a block of data words, e.g. CRC or checksum
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40611—External triggering or timing of internal or partially internal refresh operations, e.g. auto-refresh or CAS-before-RAS triggered refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits

Definitions

  • the technology of the disclosure relates generally to memory structures in computing devices.
  • RAM Random Access Memory
  • SRAM Static RAM
  • DRAM dynamic RAM
  • DRAM dynamic random access memory
  • SoC System on a Chip
  • AP applications processor
  • error correction and refresh alert information are the types of information that will be sent on the backchannel, it should be appreciated that other data may also be sent on the backchannel, including, but not limited to, temperature information, calibration information, and the like.
  • the backchannel is provided over existing, underutilized pins and wires connecting the DRAM to the SoC.
  • Exemplary pins are the clock enable (CKE) or chip select (CS) pins (or both).
  • CKE clock enable
  • CS chip select
  • Reuse of existing pins saves valuable real estate within the integrated circuit (IC) and avoids the expense of running additional wires to the DRAM.
  • avoiding additional wires eliminates possible electromagnetic interference (EMI) issues that might arise from the presence of the additional wires.
  • Power conservation may also be achieved relative to an aspect with multiple new pins because not as many drivers and receivers are needed on a device with a lower pin count.
  • Other possible solutions include adding an additional pin(s) and wire(s) to the DRAM to provide an appropriate communication backchannel.
  • a memory system comprising an AP comprising an AP pin.
  • the memory system also comprises at least one DRAM comprising a pin, and a backchannel line coupling the AP pin to the pin.
  • the AP is configured to receive at least one of: error correction information and refresh alert information from the at least one DRAM through the backchannel line.
  • a memory system comprising an AP and at least one DRAM.
  • the memory system also comprises a CKE line coupling the AP to the at least one DRAM.
  • the AP is configured to receive at least one of: error correction information and refresh alert information from the at least one DRAM through the CKE line.
  • a memory system comprising an AP and at least one DRAM.
  • the memory system also comprises a CS line coupling the AP to the at least one DRAM.
  • the AP is configured to receive at least one of: error correction information and refresh alert information from the at least one DRAM through the CS line.
  • a method for providing information to an AP from a DRAM comprises providing an AP comprising an AP pin, and providing at least one DRAM comprising a pin.
  • the method further comprises providing a backchannel line coupling the AP pin to the pin.
  • the method also comprises receiving, at the AP, at least one of: error correction information and refresh alert information from the at least one DRAM through the backchannel line.
  • a method for providing information to an AP from a DRAM comprises providing an AP, and providing at least one DRAM.
  • the method further comprises providing a CKE line coupling the AP to the at least one DRAM.
  • the method also comprises receiving, at the AP, at least one of: error correction information and refresh alert information from the at least one DRAM through the CKE line.
  • a method for providing information to an AP from a DRAM comprises providing an AP, and providing at least one DRAM.
  • the method further comprises providing a CS line coupling the AP to the at least one DRAM.
  • the method also comprises receiving, at the AP, at least one of: error correction information and refresh alert information from the at least one DRAM through the CS line.
  • FIG. 1 is a block diagram of an exemplary conventional memory communication system with a memory controller and four dynamic random access memory (DRAM) units;
  • DRAM dynamic random access memory
  • FIG. 2 is a block diagram of an exemplary memory communication system with four additional pins and wires;
  • FIG. 3A is a block diagram of another exemplary memory communication system with additional pins and two additional wires;
  • FIG. 3B is a block diagram of another exemplary memory system with two additional wires
  • FIG. 4 is a block diagram of another exemplary memory communication system with no additional wires
  • FIG. 5 is a block diagram of another exemplary memory communication system with no additional wires.
  • FIG. 6 is a block diagram of an exemplary processor-based system that can include the memory communication systems of FIGS. 2-5 .
  • DRAM dynamic random access memory
  • SoC System on a Chip
  • AP applications processor
  • error correction and refresh alert information are the types of information that will be sent on the backchannel, it should be appreciated that other data may also be sent on the backchannel, including, but not limited to, temperature information, calibration information, and the like.
  • the backchannel is provided over existing, underutilized pins and wires or lines connecting the DRAM to the SoC.
  • Exemplary pins are the clock enable (CKE) or chip select (CS) pins (or both).
  • CKE clock enable
  • CS chip select
  • Reuse of existing pins saves valuable real estate within the integrated circuit (IC) and avoids the expense of running additional wires to the DRAM.
  • avoiding additional wires eliminates possible electromagnetic interference (EMI) issues that might arise from the presence of the additional wires.
  • Power conservation may also be achieved relative to an aspect with multiple new pins because not as many drivers and receivers are needed on a device with a lower pin count.
  • Other possible solutions include adding an additional pin(s) and wire(s) to the DRAM to provide an appropriate communication backchannel.
  • the pin reuse techniques or the additional pin techniques allow refresh information to be sent. This includes, but is not limited to, targeted per-bank refresh requests, full chip refresh requests, row refresh requests, and urgent refresh requests. Additionally, error detection and/or correction information (e.g., cyclic redundancy checking (CRC)) may be sent, including, but not limited to, a data CRC fail, or an error correcting code (ECC) event, a command and address (CA) parity or other CRC failure, and an On-DRAM ECC event (correction or fail). Enabling such signals and/or commands to be sent enables next generation proposals for DRAM and particularly for low power (LP) double data rate (DDR) standards such as LP DDR5 DRAM.
  • CRC cyclic redundancy checking
  • FIG. 1 Before addressing aspects of the DRAM backchannel communication systems disclosed herein, a brief overview of a basic memory communication system is provided with reference to FIG. 1 . The discussion of exemplary aspects of DRAM backchannel communication systems begins below with reference to FIG. 2 .
  • FIG. 1 illustrates a memory communication system (also referred to herein as “memory system”) 10 that includes an AP 12 (also referred to herein as a SoC) that is operatively coupled to DRAMs 14 ( 1 )- 14 ( 4 ).
  • Data lines (DQ 15 - 0 ) couple the AP 12 to a bank of two DRAMs 14 (i.e., DRAMs 14 ( 1 ) and 14 ( 2 )) while data lines (DQ 31 - 16 ) couple the AP 12 to a second bank of two DRAMs 14 (i.e., DRAMs 14 ( 3 ) and 14 ( 4 )).
  • CKE and CS lines couple the AP 12 to the DRAMs 14 ( 1 )- 14 ( 4 ) (only the CKE lines are illustrated, but it should be understood that the CS lines are essentially the same). It is readily apparent that there is no backchannel available for the memory system 10 . That is, the DRAMs 14 ( 1 )- 14 ( 4 ) have no channel through which the DRAMS 14 ( 1 )- 14 ( 4 ) may perform error correction or manage refresh requests.
  • FIG. 2 illustrates a memory system 20 with an AP 22 and DRAMs 24 ( 1 )- 24 ( 4 ). Each of the DRAMs 24 ( 1 )- 24 ( 4 ) has a pin added with a corresponding wire coupling the pin to the AP 22 .
  • the additional wires are labeled Alert_a0, Alert_b0, Alert_a1, and Alert_b1.
  • the DRAMs 24 ( 1 )- 24 ( 4 ) may provide commands and signals to perform error correction and/or manage refresh requests.
  • the additional pins greatly simplify internal design and timing requirements of the memory system 20 , the increase in the number of lines routed from the AP 22 to the DRAMs 24 ( 1 )- 24 ( 4 ) is undesirable for power and EMI issues.
  • the additional pins increase the overall size of the circuits required by the AP 22 .
  • the memory system 20 does solve the basic problem of providing a backchannel communication option.
  • FIG. 3A illustrates a memory system 30 with an AP 32 and four DRAMs 34 , 36 , 38 , and 40 .
  • the DRAMs 34 , 36 , 38 , and 40 are arranged into bank A 42 and bank B 44 . That is, the bank A 42 includes the DRAMs 34 and 36 , and the bank B 44 includes the DRAMs 38 and 40 .
  • Data lines DQ 15 - 0 couple to the DRAMs 34 and 38
  • data lines DQ 31 - 16 couple to the DRAMs 36 and 40 .
  • DRAM 34 has one extra pin 46 to which a backchannel line 48 (also labeled Alert_a1 in FIG. 3A ) is coupled.
  • DRAM 36 has one extra pin 50 to which the backchannel line 48 is coupled.
  • DRAM 38 has one extra pin 52 to which a second backchannel line 54 (also labeled Alert_b1 in FIG. 3A ) is coupled.
  • DRAM 40 has one extra pin 56 to which the second backchannel line 54 is coupled.
  • the AP 32 has only two AP pins 58 and 60 added, since the backchannel lines 48 and 54 are shared between the banks A 42 and B 44 (i.e., the backchannel line 48 (Alert —a 1) is shared by the DRAMs 34 and 36 and the second backchannel line 54 (Alert_b1) is shared by the DRAMs 38 and 40 ).
  • the AP 32 has a two pin savings relative to the AP 22 .
  • a two pin savings reduces expense associated with the AP 32 , and likewise means that the AP 32 has a smaller footprint than the AP 22 .
  • the structure of the memory system 30 allows for the possibility that both the DRAMs 34 and 36 within the bank A 42 may try to drive the backchannel line 48 at the same time. Likewise, both the DRAMs 38 and 40 within the bank B 44 may try to drive the second backchannel line 54 at the same time.
  • a communication protocol may be implemented to prevent information collision on the APs pin 58 and 60 at the AP 32 .
  • the communication protocol may be a time division multiplexing (TDM) protocol.
  • TDM time division multiplexing
  • 3A is to establish a master-slave relationship between DRAMs that share a given backchannel line (e.g., the DRAMs 34 and 36 sharing the backchannel line 48 or the DRAMs 38 and 40 sharing the second backchannel line 54 ) to arbitrate between the DRAMs sharing the backchannel line.
  • Respective external balls 62 , 64 , 66 , and 68 may be associated with each of the DRAMs 34 , 36 , 38 , and 40 .
  • the external balls 62 and 66 may be tied high, and the external balls 64 and 68 may be tied low.
  • the polarity of the external balls (high or low) may determine the master-slave arrangement (e.g., master is tied high and slave is tied low (or vice versa)).
  • simple counters (denoted as box C) 70 , 72 , 74 , and 76 are instantiated in the respective DRAMs 34 , 36 , 38 , and 40 .
  • the counters 70 and 72 are reset at the same time, while the counters 74 and 76 are also reset at the same time.
  • the DRAMs 34 and 38 with the external balls 62 and 66 tied high, are active and can drive the backchannel lines 48 and 54 during the first half of the count of the counters 70 , 72 , 74 , and 76 .
  • the other DRAMs 36 and 40 can drive the backchannel lines 48 and 54 during the later half of the count of the counters 70 , 72 , 74 , and 76 .
  • the AP 32 is able to tell which of the DRAMs 34 , 36 , 38 , and 40 are tied to a high or low state by reading a register 78 , or by decoding the serial data stream when it is presented. Note that instead of the counters, the DRAMs 34 , 36 , 38 , and 40 may have relative importance (e.g., master-slave) so that when coincident alerts are generated, a predetermined DRAM will communicate with the AP 32 before other DRAMs.
  • FIG. 3B A second technique to provide a TDM protocol is presented with reference to FIG. 3B , in which a memory system 30 ′ is illustrated.
  • the memory system 30 ′ is substantially similar to the memory system 30 of FIG. 3A and similar elements are numbered similarly, but with a prime designation (e.g., the DRAM 34 of the memory system 30 is analogous to DRAM 34 ′ of the memory system 30 ′).
  • a prime designation e.g., the DRAM 34 of the memory system 30 is analogous to DRAM 34 ′ of the memory system 30 ′.
  • the second technique illustrated in FIG. 3B by the memory system 30 ′, is provided with DRAM-to-DRAM communication links 80 ′ and 82 ′ between the DRAMs 34 ′ and 36 ′ and between the DRAMs 38 ′ and 40 ′ respectively.
  • the communication link 80 ′ could be established, for example, by respective balls 84 ′ and 86 ′ on the DRAMs 34 ′ and 36 ′, and the communication link 82 ′ could be established by similar balls (not illustrated) on the DRAMs 38 ′ and 40 ′.
  • the communication links 80 ′ and 82 ′ could be dedicated to arbitrate between the two corresponding DRAMs 34 ′ and 36 ′, and 38 ′ and 40 ′ respectively.
  • the arbitration could be a simple open drain/pull-up signaling or other method to arbitrate which of the DRAMs 34 ′ and 36 ′ can use the backchannel line 48 ′, and which of the DRAMs 38 ′ and 40 ′ can use the second backchannel line 54 ′.
  • FIGS. 3A and 3B require two external balls per DRAM 34 , 36 , 38 , and 40 ( 34 ′, 36 ′, 38 ′ and 40 ′) (one for the respective backchannel line 48 or 54 ( 48 ′ or 54 ′) and one for the arbiter (either the low or high of the external balls 62 , 64 , 66 , or 68 or the communication links 80 ′ and 82 ′)), the communication links 80 ′ and 82 ′ are simple to implement and do not need to leave the memory package, requiring fewer top-level package balls. Additionally, the APs 32 and 32 ′ only need two AP pins 58 and 60 or 58 ′ and 60 ′ respectively, which provides a cost savings relative to the AP 22 of FIG. 2 .
  • a third solution is to reuse existing lines between an AP and a DRAM that are currently underutilized.
  • the reused lines are the CKE and/or CS lines.
  • these two lines have little traffic and thus are amenable to dual use including the original intent and as a backchannel. That is, the CKE pin is only pulled low by the AP during a refresh or power down cycle (in which case no CRC errors will be generated and refresh requests are not needed).
  • the DRAMs have the ability to drive this pin when the AP is holding it high (i.e., unused).
  • TDM may also be used to assist in preventing collisions on the line.
  • a first exemplary timing parameter may be: write CMD to CKE low.
  • a second exemplary timing parameter may be: active CMD to Refresh request.
  • the DRAM would only be allowed to request a refresh after a certain amount of inactive commands (e.g., two inactive commands).
  • inactive commands e.g., two inactive commands.
  • Such delay allows the last CRC to return, and prevents the DRAM from going into self-refresh/power down (AP-drive) until the DRAM is done transmitting its request.
  • the AP would be able to determine if it wants to obey the request for the refresh or place the entire DRAM into power down.
  • FIGS. 4 and 5 illustrate two versions of this third solution (i.e., reuse of existing lines).
  • a memory system 90 is illustrated with an AP 92 and DRAMs 94 , 96 , 98 , and 100 .
  • An existing CKE line 102 (also labeled CKE_A in FIG. 4 ) couples the DRAMs 94 and 96 to the AP 92 .
  • an existing CKE line 104 (also labeled CKE_B in FIG. 4 ) couples the DRAMs 98 and 100 to the AP 92 . No additional pins are needed at the AP 92 .
  • FIG. 4 a memory system 90 is illustrated with an AP 92 and DRAMs 94 , 96 , 98 , and 100 .
  • An existing CKE line 102 also labeled CKE_A in FIG. 4
  • an existing CKE line 104 (also labeled CKE_B in FIG. 4 ) couples the DRAMs 98 and 100 to the AP 92
  • a communication line 106 couples the DRAM 94 to the DRAM 96
  • a communication line 108 couples the DRAM 98 to the DRAM 100 .
  • the communication lines 106 and 108 may be positioned internally to the memory package and allow the DRAMs 94 , 96 , 98 , and 100 to communicate and arbitrate therebetween so as to avoid collisions. As noted above, there may be other techniques through which the DRAMs arbitrate signals provided across the backchannel line.
  • a memory system 110 is illustrated with an AP 112 and DRAMs 114 , 116 , 118 , and 120 .
  • An existing CKE line 122 (also labeled CKE_A in FIG. 5 ) couples the DRAMs 114 and 116 to the AP 112 .
  • an existing CKE line 124 (also labeled CKE_B in FIG. 5 ) couples the DRAMs 118 and 120 to the AP 112 . No additional pins are needed at the AP 112 .
  • the DRAMs 114 , 116 , 118 , and 120 are provided with respective external balls 126 , 128 , 130 , and 132 . Similar to the memory system 30 in FIG.
  • the external balls 126 and 130 may be pulled high while the external balls 128 and 132 are pulled low. Again, the external balls 126 , 128 , 130 , 132 may allow establishment of a master-slave relationship between the DRAMs which facilitates arbitration therebetween.
  • Counters 134 , 136 , 138 , and 140 may be used similarly to the counters 70 , 72 , 74 , and 76 in the memory system 30 of FIG. 3A to help avoid collisions.
  • one DRAM may be given priority over others so that communication from the prioritized DRAM is provided to the AP 112 before communication from the other DRAMs.
  • Table 1 presents an exemplary list of commands.
  • the commands are a serial data stream of nine (9) bits, but multiple serial streams can be used. It should be appreciated that any data ‘word’ for the command may take less than five (5) nanoseconds (ns), and would thus be less than the burst time to complete. It should be appreciated that the types of alerts listed in Table 1 are provided only as an example.
  • alerts and commands between the AP and DRAM may be used over a backchannel, such as alerts pertaining to: DRAM temperature, DRAM timing drift, DRAM PLL clock status, and DRAM calibration status (i.e., an alert to indicate a change of status within the DRAM has occurred for these categories of DRAM operation).
  • the AP may service the DRAM to solve the condition that generated the alert. This servicing may take place on receipt of the alert, which reduces latency relative to prior arrangements which required the AP to poll each DRAM to determine which DRAM generated the alert and the nature of the condition that generated the alert.
  • the CS line to the bank A or the bank B or other lines may also be used to transmit information from a DRAM to an AP.
  • the bandwidth of the CS lines can be heavily used during multiple commands, however, so it would be less efficient to find free bandwidth on the CS lines than on the CKE lines. Nevertheless, it could be used in conjunction with the CKE line to convey additional information, or singly to convey limited information.
  • the nature of the alert may dictate whether it is sent on the backchannel line, especially where the line is reused and/or the activity between the AP and the DRAM may cause the backchannel circuitry to be enabled or disabled dynamically.
  • the backchannel line may be dynamically disabled when a burst read operation is occurring. Once the burst read operation concludes, the backchannel line may be enabled and any pending or queued alerts may be transmitted to the AP.
  • the DRAM backchannel communication systems and methods according to aspects disclosed herein may be provided in or integrated into any processor-based device. Examples, without limitation, include a set top box, an entertainment unit, a navigation device, a communications device, a fixed location data unit, a mobile location data unit, a mobile phone, a cellular phone, a computer, a portable computer, a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, and a portable digital video player.
  • PDA personal digital assistant
  • FIG. 6 illustrates an example of a processor-based system 150 that can employ the DRAM backchannel communication systems and methods illustrated in FIGS. 2-5 .
  • the processor-based system 150 includes one or more central processing units (CPUs) 152 , each including one or more processors 154 .
  • the CPU(s) 152 may have cache memory 156 coupled to the processor(s) 154 for rapid access to temporarily stored data.
  • the CPU(s) 152 is coupled to a system bus 158 and can intercouple devices included in the processor-based system 150 . As is well known, the CPU(s) 152 communicates with these other devices by exchanging address, control, and data information over the system bus 158 .
  • Other devices can be connected to the system bus 158 . As illustrated in FIG. 6 , these devices can include a memory system 160 , one or more input devices 162 , one or more output devices 164 , one or more network interface devices 166 , and one or more display controllers 168 , as examples.
  • the input device(s) 162 can include any type of input device, including but not limited to input keys, switches, voice processors, etc.
  • the output device(s) 164 can include any type of output device, including but not limited to audio, video, other visual indicators, etc.
  • the network interface device(s) 166 can be any devices configured to allow exchange of data to and from a network 170 .
  • the network 170 can be any type of network, including but not limited to a wired or wireless network, a private or public network, a local area network (LAN), a wide area network (WAN), a wireless local area network (WLAN), BLUETOOTHTM, and the Internet.
  • the network interface device(s) 166 can be configured to support any type of communication protocol desired.
  • the CPU(s) 152 may also be configured to access the display controller(s) 168 over the system bus 158 to control information sent to one or more displays 172 .
  • the display controller(s) 168 sends information to the display(s) 172 to be displayed via one or more video processors 174 , which process the information to be displayed into a format suitable for the display(s) 172 .
  • the display(s) 172 can include any type of display, including, but not limited to, a cathode ray tube (CRT), a liquid crystal display (LCD), a light emitting diode (LED) display, a plasma display, etc.
  • DSP Digital Signal Processor
  • ASIC Application Specific Integrated Circuit
  • FPGA Field Programmable Gate Array
  • a processor may be a microprocessor, but in the alternative, the processor may be any conventional processor, controller, microcontroller, or state machine.
  • a processor may also be implemented as a combination of computing devices (e.g., a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration).
  • RAM Random Access Memory
  • ROM Read Only Memory
  • EPROM Electrically Programmable ROM
  • EEPROM Electrically Erasable Programmable ROM
  • registers a hard disk, a removable disk, a CD-ROM, or any other form of computer readable medium known in the art.
  • An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium.
  • the storage medium may be integral to the processor.
  • the processor and the storage medium may reside in an ASIC.
  • the ASIC may reside in a remote station.
  • the processor and the storage medium may reside as discrete components in a remote station, base station, or server.

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BR112016015961A BR112016015961A2 (pt) 2014-01-09 2015-01-08 Métodos e sistemas de comunicação de canal de retorno de memória de acesso aleatório dinâmica (dram)
JP2016544821A JP2017503303A (ja) 2014-01-09 2015-01-08 ダイナミックランダムアクセスメモリ（ｄｒａｍ）バックチャネル通信システムおよび方法
TW104100580A TW201543498A (zh) 2014-01-09 2015-01-08 動態隨機存取記憶體背通道通訊系統及方法
PCT/US2015/010583 WO2015105948A1 (en) 2014-01-09 2015-01-08 Dynamic random access memory (dram) backchannel communication systems and methods
KR1020167020653A KR20160106096A (ko) 2014-01-09 2015-01-08 다이내믹 랜덤 액세스 메모리 (dram) 백채널 통신 시스템들 및 방법들
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CN201580004085.3A CN105917312B (zh) 2014-01-09 2015-01-08 动态随机存取存储器(dram)反向通道通信系统和方法
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