US9869593B2 - Detection device with suspended bolometric membranes having a high absorption efficiency and signal-to-noise ratio - Google Patents

Detection device with suspended bolometric membranes having a high absorption efficiency and signal-to-noise ratio Download PDF

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US9869593B2
US9869593B2 US15/355,835 US201615355835A US9869593B2 US 9869593 B2 US9869593 B2 US 9869593B2 US 201615355835 A US201615355835 A US 201615355835A US 9869593 B2 US9869593 B2 US 9869593B2
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electrodes
layer
membrane
detection device
transducer
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Sébastien Cortial
Michel Vilain
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Ulis SAS
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J2005/103—Absorbing heated plate or film and temperature detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J2005/106—Arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Definitions

  • the present description relates to the field of electromagnetic radiation detectors, particularly of detectors comprising microbolometers intended for the detection of radiations, typically in the “thermal” range, in other words, in infrared.
  • Infrared radiation (IR) detectors are typically manufactured in the form of a two-dimensional juxtaposition (for example, in an array) of an assembly of elementary microbolometers arranged at the surface of a support substrate, each microdetector being intended to form an image point.
  • Each microdetector comprises a membrane suspended above the substrate and electrically connected thereto by means of long narrow beams (or “arms”) embedded in electrically-conductive pillars.
  • the assembly is placed in a tight enclosure, for example, a package under very low pressure, to suppress the thermal conductance of the surrounding gas.
  • Each membrane heats up by absorbing the incident radiation originating from the observed thermal scene, which is transmitted and focused by an adequate optical system at the level of the focal plane having the membranes arranged thereon.
  • the membrane comprises, in particular, a layer of a “transducer” material having an electric property, the resistivity in the case of microbolometers, which strongly varies when the temperature changes, for example generating a current variation under a constant voltage biasing, that is, an electric signal, proportional to the incident radiation flow.
  • detectors of this type comprise steps directly carried out at the surface of a substrate comprising a plurality of electronic circuits or “read-out integrated circuits” or “ROICs”, in so-called “monolithic” fashion.
  • This term designates a continuous sequence of operations on the same substrate, after the integrated circuit manufacturing process, usually based on silicon.
  • Bolometric microdetector manufacturing steps are generally similar to collective manufacturing techniques usual in microelectronics, usually concerning from a few tens to a few hundreds of array detectors arranged on a same substrate.
  • the components implementing the bolometric functions of optical absorption, optical-thermal transduction, and thermal resistance are formed at the surface of a so-called “sacrificial” layer, in that the layer, simply intended to form a construction base, is removed at the end of the process by an adequate method which does not attack the other detector parts, and particularly the components formed thereon.
  • a polyimide layer is used, which layer is eventually removed by combustion in an oxygen plasma.
  • the sacrificial layer is a silicon oxide layer (generally designated by “SiO” eventually removed by hydrofluoric vapor phase etching (HFv).
  • the most common manufacturing method for forming suspended membranes is called “above IC” or “MEMS-on-top”.
  • the microdetectors are directly constructed at the surface of the substrate comprising the read-out circuits, due to specific methods.
  • the sacrificial layer is of organic nature—generally polyimide—and the transducer material most often is an oxide having a semiconductor character (VOx, NiOx) or amorphous silicon (a-Si).
  • VOx, NiOx a semiconductor character
  • a-Si amorphous silicon
  • a beam splitter is also formed between the absorbing membrane and a reflector arranged at the substrate surface, to provide an absorption maximum for the detector in the vicinity of 10 micrometers.
  • electric pillars with a large aspect ratio should be formed through a thick temporary (sacrificial) polyimide layer having a thickness in the range from 2 to 2.5 micrometers.
  • the dielectric or resistive layers which form the membrane “skeleton” are conventionally made of silicon oxide (SiO) or of silicon nitride (generically noted SiN), or also directly of semiconductor amorphous silicon according, for example, to U.S. Pat. No. 5,912,464. Such materials can be deposited at relatively low temperature and are inert towards the method of removing the organic sacrificial layer under an oxygen plasma. Such an “above IC” manufacturing process is typically formed of some ten photolithographic “levels”, that is, according to a relatively complex and expensive process.
  • a new type of membrane manufacturing which comprises integrating the microbolometers in the so-called “back-end of line” layers (or “BEOLs”), in the same way as the components generally achieving the MEMS functions.
  • BEOLs back-end of line layers
  • This acronym designates the steps of manufacturing all the metal interconnects at relatively low temperature, characteristic of the end of standard microelectronic manufacturing processes.
  • MEMS-in-CMOS aims at using certain BEOL layouts, mature on an industrial level, to integrate part of the microbolometers components.
  • the metallized vertical interconnection vias between successive BEOL metal levels for example obtained according to the “damascene” method, advantageously form the microdetector pillars.
  • IMDs Inter-Metal-Dielectrics
  • SiO a standard material in microelectronics
  • the last photolithographic levels for the read-out circuit manufacturing are also used to directly form the pillars supporting the membranes.
  • a few lithographic levels in the series of levels necessary to manufacture microbolometers are thus spared, which results in a significant saving on manufacturing costs.
  • the removal of the SiO sacrificial layer of the “MEMS-in-CMOS” manufacturing is in this case only feasible by means of vapor-phase hydrofluoric acid (HFv). Accordingly, all the materials forming the microbolometers should imperatively be inert with respect to this very chemically aggressive method.
  • MEMS-in-CMOS enables to simplify the manufacturing, it however suffers from limitations which penalize the performance of the microbolometers thus constructed.
  • the architecture provided according to this technique imposes a sharing of the space available between metallized areas intended, in particular, to absorb the incident radiation, and areas only occupied by the transducer material (amorphous silicon).
  • the fraction of the surface area occupied by the metal conditions the optical-thermal transduction function (optical absorption efficiency ⁇ of the membrane), while the remaining surface area fraction is dedicated to the thermoelectric transduction function in the transducer material.
  • Such a limitation of the volume of material implied in the electric conduction (as compared with the total volume of amorphous silicon present in the structure) generates a decrease in the number of charge carriers N implemented in the conduction. This necessarily results in a substantial increase in the low-frequency noise (“B1/f ”) in accordance with Hooge's relation, which penalizes the signal-to-noise ratio (“SNR”) of the detector.
  • FIGS. 1 to 3 illustrating an elementary resistive bolometric microdetector 10 (or “microbolometer”) of the state of the art for infrared detection.
  • Bolometer 10 comprises a thin membrane 12 absorbing the incident radiation, suspended above a substrate—support 14 via two conductive anchoring pillars 16 to which it is attached by two holding and thermally-insulating arms 18 .
  • membrane 12 comprises two metal elements 20 , 22 having an IR absorbing and biasing electrode function, and an amorphous silicon layer 24 covering each of the two electrodes 12 , 14 and filling space 18 therebetween.
  • Layer 24 has a function of transduction of the heating caused by the absorption of the radiation by electrodes 20 , 22 into an electric resistance variation.
  • the transducer material is thus only made of amorphous silicon, which has the advantage of being inert with respect to the sacrificial layer releasing process based on vapor-phase hydrofluoric acid.
  • V/K V/K
  • R ⁇ S ⁇ ⁇ sc ⁇ Vpol Rb ⁇ A * ⁇ * TCR * R th * ⁇ ⁇ ⁇ ( ⁇ sc ) ⁇ ⁇ sc ( 1 )
  • optical absorption efficiency ⁇ is linked to the fraction of the surface area of each membrane occupied by the metal deposited for this purpose.
  • the electric resistance of a microdetector Rb can be expressed according to resistivity ⁇ of the transducer material, for example, according to relation:
  • Rb ⁇ * L W * e ( 2 ) where L, W and e respectively are the length, the width, and the thickness of the volume of transducer material (assumed to have or taken down to a parallelepipedal shape) conducting the electric current.
  • these dimensions are substantially those of the area separating electrodes 20 , 22 , for example corresponding to a physical interrupt (or groove) formed in an initially continuous layer of metal to form the electrodes (which are in this example typically called “coplanar” since they are arranged at the same level).
  • the current noise power of a resistor biased under a voltage Vpol can be expressed by the quadratic sum of the so-called 1/f low-frequency noise (I b1/f ) and of a frequency-independent component called “white noise” (I bb ).
  • I b1/f 1/f low-frequency noise
  • I bb white noise
  • Noise power I b1/f 2 varies according to the inverse of number N of charge carriers contained in the volume concerned by the current lines, according to Hooge's relation:
  • I b ⁇ ⁇ 1 / f 2 ⁇ H N * ( Vpol Rb ) 2 * ln ⁇ ( BPCL ) ( 3 )
  • ⁇ H is the “Hooge parameter”
  • BPCL is the frequency bandwidth of the read-out circuit.
  • ⁇ H N of the considering element is simply calculated from dimensional parameters W, L, e according to relation:
  • I bb 2 4 * k * T Rb * ( BPCL ) ( 5 ) where k designates Boltzmann' s constant and T designates temperature.
  • I b [ 4 * k * T Rb * ( BPCL ) + ⁇ H N * ( Vpol Rb ) 2 * ln ⁇ ( BPCL ) ] ( 6 )
  • the microdetector signal-to-noise ratio can be calculated by the ratio of the response (1) to the noise (6) by taking into account the elements defined by the read-out circuit (Vpol, BPCL) and the dimensional parameters of the resistor of each microdetector (W, L, e) which enable to express bolometric resistance Rb and the number of charge carriers N.
  • Ratio SNR can thus be expressed according to relation:
  • the SNR of this microdetector based on amorphous silicon will be limited to approximately 60% of its maximum value corresponding to large lengths L (not including absorption losses). Such a limitation is linked to the increase of the low-frequency noise at low values of L.
  • microbolometer assemblies partly integrated to a CMOS process, that is, where the sacrificial material is made of SiO or of any related material conventional in microelectronics, for high-performance devices and for methods of manufacturing the same compatible with the design of retinas of very small pitch, typically below 20 ⁇ m.
  • the present description thus aims at providing a detector with suspended bolometric membranes, which membranes having an architecture allowing a high performance in terms of absorption efficiency and of SNR, and having an architecture which may be, if necessary, manufactured according to a technology requiring the use of a very aggressive sacrificial layer releasing chemistry.
  • a bolometric detection device comprising, in one embodiment:
  • a substrate comprising a read-out circuit
  • an array of elementary detectors each comprising a membrane suspended above the substrate and connected to the read-out circuit by at least two electric conductors, said membrane comprising two electrically-conductive electrodes respectively connected to the two electric conductors, and a volume of transducer material electrically connecting the two electrodes, wherein the read-out circuit is configured to apply an electrical stimulus between the two electrodes of the membrane and to form an electric signal as a response to said application.
  • said volume comprises:
  • a volume of a first transducer material electrically connecting the two electrodes of the membrane and forming walls of a closed enclosure having each of the electrodes at least partially housed therein;
  • a volume of a second transducer material electrically connecting the two electrodes and housed in the enclosure, the electric resistivity of the second material being smaller than the electric resistivity of the first material.
  • Transducer means a material having a resistivity in the range from 0.1 to 10 4 Ohm.cm and having a negative thermal coefficient of resistance TCR.
  • the present description also aims at a method of manufacturing a bolometric detection device, comprising:
  • an array of membranes each connected to the read-out circuit by at least two electric conductors, said membrane comprising two electrically-conductive electrodes respectively connected to the two electric conductors, and a volume of transducer material electrically connecting the two electrodes;
  • the manufacturing of the transducer volume comprises:
  • the electric resistivity of the second material is smaller than the electric resistivity of the first material
  • the first material is inert to the removal of the sacrificial layer.
  • the transducer material is formed of a “shell” and of a “core” electrically in parallel with respect to the electrodes forming the radiation absorption means, the core being formed of a material of smaller resistivity than the shell, particularly, at least 5 times smaller, and typically from 10 to 20 times smaller.
  • the shell is made of a material having a resistivity greater than 10 Ohm.cm.
  • This type of architecture enables to have a decreased low-frequency noise component (I b1/f ), essentially implemented by the core due to the core resistivity, while allowing, due to the shell, an appropriate selection of the material according to the manufacturing technology, for example, a shell inert to the chemical attack for releasing the sacrificial layer in the context of a MEMS-in-CMOS technology.
  • I b1/f low-frequency noise component
  • the two electrodes are coplanar and only separated by one groove.
  • the two electrodes belong to a series of at least three electrically-conductive coplanar areas, separated from one another by parallel grooves arranged between the two electrodes.
  • the membrane comprises a continuous layer of electric insulator extending between the electrodes and partially covering each of them.
  • the electric resistivity of the second material is at least five times smaller than the electric resistivity of the first material and preferably from ten times to twenty times smaller.
  • the first material has an electric resistivity greater than 10 Ohm.cm, and preferably a resistivity smaller than 10 4 Ohm.cm.
  • the first material is amorphous silicon, an amorphous alloy of silicon and germanium of formula Si x Ge (1-x) , or an amorphous alloy of silicon and carbon of formula a-Si x C (1-x)
  • the second material is a metal oxide
  • the sacrificial layer is removed by a HFv hydrofluoric acid etching, and the first material is amorphous silicon, an amorphous alloy of silicon and germanium of formula a-Si x Ge (1-x) , or an amorphous alloy of silicon and carbon of formula a-Si x C (1-x) .
  • the two electrodes are formed by depositing a layer of electrically-conductive material and by only forming one groove in said layer down to the lower layer of first material.
  • the two electrodes are formed by depositing a layer of electrically-conductive material and by forming at least two parallel grooves in said layer down to the lower layer of first material.
  • the method comprises, before depositing the second transducer material, depositing an electrically-insulating layer extending between the electrodes and partially covering each of them.
  • FIG. 1 is a simplified perspective view of a bolometric membrane of the state of the art suspended above a read-out circuit;
  • FIGS. 2 and 3 are simplified top and cross-section view of the membrane of FIG. 1 ;
  • FIG. 4 is a plot of the signal-to-noise ratios according to the length of the space between electrodes of a membrane of FIG. 1 ;
  • FIGS. 5 and 6 are simplified top and cross-section views of a bolometric membrane according to a first embodiment
  • FIG. 7 is a plot of the signal-to-noise ratios according to the length of the space between electrodes of a membrane of FIG. 1 and of a membrane according to the first embodiment
  • FIG. 8 is a plot of signal-to-noise ratios according to the amorphous silicon thickness in a membrane
  • FIGS. 9 and 10 are simplified top and cross-section views of a bolometric membrane according to a second embodiment
  • FIG. 11 is a plot of the signal-to-noise ratios according to the length of the space between electrodes of a membrane of FIG. 1 and of a membrane according to the first and second embodiments;
  • FIGS. 12 and 13 are simplified top and cross-section views of a bolometric membrane according to a third embodiment
  • FIGS. 14 and 15 are simplified top and cross-section views of a bolometric membrane according to a third embodiment.
  • FIGS. 16 and 17 are simplified cross-section views illustrating a first method of manufacturing a membrane.
  • a bolometric microdetector membrane 30 comprises:
  • an encapsulation shell 32 advantageously made of amorphous silicon, comprising a lower or “base” layer 34 , and an upper cap 36 formed of an upper layer 38 and of lateral walls 40 , defining together an internal volume 42 of width W, of length M, and of height e;
  • Core 44 totally filling internal volume 42 , and accordingly resting on each of electrodes 20 , 22 , and thus defining a second conduction channel between the latter, of width W and of thickness e, in parallel with the first conduction channel.
  • Core 44 is made of a material having a smaller resistivity than the shell material, at least 5 times smaller, and typically from 10 to 20 times smaller.
  • core 44 is made of a metal oxide having a negative TCR coefficient, for example, VOx and/or TiOx and/or NiOx, defining a second conduction channel provided with a low low-frequency noise coefficient.
  • the current flows between the two metal poles 20 , 22 , in the metal oxide across width W and in the amorphous silicon across substantially the entire pixel width (e.g. 12 ⁇ m).
  • the two lower 34 and upper 38 amorphous silicon layers have an equal thickness, that is, 20 nanometers.
  • the SNR ratio can thus be calculated for the case of the pixel schematized in FIGS. 5 and 6 , according to length L of the conduction channel, for example, in simplified fashion, admitting that the TCR coefficient is comparable for the two transducer materials.
  • the graph of FIG. 7 shows that the insertion of a layer of metal oxide transducer material which is ten times less resistive than amorphous silicon and generates little low-frequency noise for a same resistance Rb enables to largely compensate for the degradation of the SNR caused by the decrease of L down to around 2 ⁇ m.
  • the current flowing through the amorphous silicon which represents 17% of the total current in this example, contributes to response R due to its TCR equivalent to that of the MOx (relation 1), and only marginally affects the general noise (relation 6).
  • the wider use of the indicated relations shows that the proportion of current flowing through the amorphous silicon path may vary—in relation with the thickness of the amorphous silicon—within a very wide range without for this to significantly impact the SNR, as shown in FIG. 8 .
  • At least two parallel and identical interrupts or grooves are defined, for example, each having a length L.
  • the effective length of the conduction channel thus becomes P*L, where P is the number of grooves.
  • P the number of grooves.
  • the loss generated on absorption ⁇ can be evaluated to be in the range from 10 to 15%, that is, smaller than the surface area loss, due to the narrowness of the grooves relative to the radiation wavelength, that is, typically 10 ⁇ m for LWIR detection.
  • the calculation of the SNR may be performed for a sensitive membrane comprising two grooves, thus defining two electrodes 20 , 22 interposing a metal area 50 ( FIGS. 9 and 10 ), considering that the effective length of the resistor is equal to 2*L.
  • Physical quantity L e.g. of each groove in this case can only be scanned up to 6 ⁇ m, beyond which the entire pixel would be demetallized (with the disappearing of the contacts and thus of the bolometric resistor).
  • the third embodiment differs from the above-described embodiments by the insertion of a layer of electric insulator, for example, of dielectric.
  • layer 52 is inserted between metal elements 20 , 22 ( FIGS. 12 and 13 corresponding to the supplemented first embodiment) or 20 , 22 , 50 ( FIGS. 14 and 15 corresponding to the second embodiment) and transducer MOx 44 , all over their common occupied surface area, except along two strips 54 , 56 parallel to the groove(s) of length L and located along and close to two opposite edges of the membrane.
  • effective length L′ that is, the total electric length of the path of the current lines between the two electric terminals of the conduction channel in the second transducer MOx 44 , can be increased so that L′>>L, independently from optical absorption ⁇ .
  • the thickness of layer MOx may be doubled in this case to compensate for the increase of length L′ of the conduction channel in this material.
  • a first portion of the current runs through the silicon of base layer 34 along a length L if the pixel comprises a single groove (case a/ of FIG. 12 and 13 ) or 2*L if two grooves (case b/ of FIGS. 14 and 15 ) have been positioned.
  • Another portion of the current runs through upper encapsulation layer 36 along a greater length L′, this other portion of the current being thus proportionally smaller.
  • This ultimate SNR level is obtained as a counterpart, acceptable in most cases, to the addition of an additional dielectric layer in the assembly, and of an additional photolithography level.
  • the previously-introduced limitation to one or at most two grooves corresponds to the very specific and exemplary context of the manufacturing of very small pixels (elementary detectors) having a 12 ⁇ 12- ⁇ m 2 surface area occupation. If allowed by the technology or for larger pixels, some embodiments, still as advantageous, may call for the defining of three or more grooves, according to the pixel pitch. Indeed, ratio W/L should be maintained approximately constant to avoid excessively modifying resistance Rb, and spaces (grooves) of limited width should be kept to avoid excessively deteriorating the optical absorption.
  • amorphous silicon to form the tight shell for the second transducer material is specified. It should be specified that the same result will be obtained by means of silicon and germanium alloys of a-Si x Ge (1-x) type or of amorphous silicon and carbon alloys of a-Si x C (1-x) type.
  • the resistivity range to be considered as typical while substantially providing the attached advantages thus extends between 10 Ohm.cm and 10 4 Ohm.cm.
  • a manufacturing method will now be described, starting with the steps of manufacturing the stack of the CMOS substrate of the read-out circuit according to the teachings of document US 2014/319350.
  • the method enables to manufacture a bolometric detector by means of a limited number of photolithographic levels, however compatible with the use of any type of transducer material, advantageously essentially MOx.
  • the manufacturing method is a technique of assembling membranes compatible with a HFv-type sacrificial layer release, combining the use of a second metal-oxide type transducer material of low electric resistivity, jointly with a first transducer material such as amorphous silicon or a related alloy, intended to entirely protect the metal oxide during the final sacrificial dielectric material etching operation.
  • a construction capable of outclassing the performance (signal-to-noise ratio) of the state of the art, in an economical way compatible with an integration in the CMOS manufacturing flow of the support ROIC is thus obtained.
  • the method for example conventionally starts with the construction of an electronic read-out circuit in CMOS technology 60 comprising one or a plurality of levels 62 of interconnects 64 (“back-end” portion of CMOS circuit 60 ) particularly connecting functional blocks of read-out circuit 60 to one another, and intended to form input/output connections of read-out circuit 60 .
  • the metal continuity between the back-end layer of circuit 60 and each bolometric membrane is further formed by means of a metallized via 66 through a barrier layer 68 , the mineral sacrificial layer (SiO) 70 and the base layer 34 from the layer metal of the CMOS to the metal layer 74 from which electrodes 20 , 22 of the membrane will be formed ( FIG. 16 ).
  • the sequence of operations is chiefly described, for example, in document US 2014/319350.
  • the method carries on with the construction of the membrane compatible with the HFv releasing method, while integrating a second transducer material of smaller resistivity, with no additional steps.
  • the membrane manufacturing comprises:
  • etching metal layer 74 to define one or a plurality of grooves 76 of length L across the entire with of the membrane, and thus also two metal electrodes 20 , 22 ;
  • low-resistivity second transducer material 44 for example, and typically, a vanadium oxide (of generic formula VOx), or a nickel oxide (of generic formula NiOx), or a titanium oxide (of generic formula TiOx) directly on the metal of electrodes 20 , 22 , to form electric resistor Rb in the plane of the semiconductor layers, delimited by the non-metallized spaces;
  • a second amorphous encapsulation silicon layer 36 preferably, but not necessarily, having a resistivity and a thickness identical to those of base layer 34 ;
  • this mask preferably crosses in no location the pattern of second transducer material 44 , to create no local exposure thereof on the edge (that is, at least at certain points of the membrane perimeter) of the structure. Incidentally, such a layout eases the definition of the etch method.
  • the arms are only formed of the two a-Si layers which sandwich metal layer 74 .
  • a-Si layers 34 and 36 thus have comparable and preferably identical thicknesses, to avoid possible deformations due to differential internal stress.
  • FIG. 17 The stack integrating a layer of electric insulator, for example, dielectric, of the third embodiment is shown in FIG. 17 . It may be obtained from the manufacturing illustrated in the cross-section of FIG. 16 once the grooves in metal layer 74 have been formed, by application of the following steps:
  • dielectric layer 52 e.g. SiO, SiOxNy or the like
  • openings 54 , 56 in dielectric layer 52 to form electric contacts emerging onto metal 74 .
  • These contacts are typically formed along two opposite edges of the membrane, and define the two ends of main transer material cuboid 44 , deposited afterwards;
  • second transducer material 44 of smaller resistivity for example, and typically, a vanadium oxide (of generic formula VOx), or a nickel oxide (of generic formula NiOx), or a titanium oxide (of generic formula TiOx).
  • Main transducer 44 is then insulated outside of openings 54 , 56 of the electrode metal, to form the less resistive portion in parallel of resistor Rb in the plane of the transducer layers, delimited by the previously-formed contacts;
  • the contour of the second transducer material for example, according to a simple rectangle, or more generally according to a simple polygon of smaller dimensions than the final surface area occupied by the membrane, and performing a dry or wet etching of said transducer, for example, selective over dielectric layer 52 .
  • a dry or wet etching may not be particularly selective over dielectric layer 52 , in which case it should be selective over metal layer 74 , which provides a wide freedom of definition to those skilled in the art;
  • etching dielectric 52 (if it is still present at this stage according to the method implemented at the previous step), for example, and preferably (to advantageously use the same mask as the previous one) according to the same contour as the second transducer material, by means of a wet, or preferably dry, chemistry, selective over underlying metal 74 .
  • a preferential provision is intended to suppress dielectric 52 from the surface of the membrane arms, so that there only remain the two a-Si layers and the metallic material. A maximum thermal resistance (e.g. response) of the suspended membrane is thus obtained;
  • a second encapsulation amorphous silicon layer 36 preferably (but not necessarily) with a resistivity and a thickness equivalent to those of base layer 34 ;
  • this mask preferably crosses in no location the pattern (the extension) of second transducer material 44 , nor does it cross intermediate dielectric 52 , to avoid locally exposing one or the other layer on the edge of the structure. Incidentally, such a provision eases the definition of the etch method.
  • the metal used for the electrodes and the metal used for the absorption may be formed from two different layers, particularly non-coplanar.
  • the metal used for the electrodes and the absorption layer may be provided after the definition of the second transducer material, the biasing thereof (the electric continuity) being obtained from the upper interface.
  • amorphous silicon having a resistivity in the order of 10 2 Ohm.cm.
  • the use of amorphous material alloyed with germanium of a-Si x Ge (1-x) type or with carbon of a-Si x —C (1-x) type easily provides, according to the doping and the specific composition x, materials covering the range between typically 10 Ohm.cm et 10 4 Ohm.om (beyond which said material can be considered in this specific context as almost “dielectric”), without departing from the context of the disclosure. Indeed, all these materials are inert to methods of etching sacrificial SiO layers in HFv form.

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FR1562347A FR3045148B1 (fr) 2015-12-15 2015-12-15 Dispositif de detection a membranes bolometriques suspendues a fort rendement d'absorption et rapport signal sur bruit
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FR3073941B1 (fr) * 2017-11-21 2021-01-15 Commissariat Energie Atomique Dispositif de detection d’un rayonnement electromagnetique a diaphotie reduite
FR3097046B1 (fr) * 2019-06-05 2021-05-21 Lynred Microbolomètre ayant un pas de pixel réduit
FI20195772A1 (en) * 2019-09-16 2021-03-17 Teknologian Tutkimuskeskus Vtt Oy Thermal detector
CN111710749B (zh) * 2020-04-23 2022-09-09 中国科学院上海技术物理研究所 基于多基板二次拼接的长线列探测器拼接结构及实现方法
TW202225649A (zh) 2020-07-29 2022-07-01 法商林銳股份有限公司 紅外線成像微測輻射熱計及相關形成方法
FR3113125B1 (fr) 2020-07-29 2022-07-29 Lynred Procede de realisation d’un micro-bolometre d’imagerie infrarouge et micro-bolometre associe
FR3125585B1 (fr) 2021-07-22 2023-08-04 Lynred Micro-bolometre d’imagerie infrarouge
FR3125877B1 (fr) 2021-07-30 2023-06-30 Lynred Procede de realisation d’un micro-bolometre d’imagerie infrarouge aveugle et micro-bolometre associe
CN115931140A (zh) 2021-08-06 2023-04-07 财团法人工业技术研究院 微机电红外光感测装置及其制造方法
FR3133447B1 (fr) 2022-03-11 2024-04-12 Lynred Micro-bolometre d’imagerie infrarouge
TWI816360B (zh) * 2022-04-11 2023-09-21 國立高雄科技大學 非制冷型紅外線感測器
FR3138517A1 (fr) 2022-07-28 2024-02-02 Lynred Micro-bolometre d’imagerie infrarouge aveugle et procede de realisation

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IL249208B (en) 2019-01-31
IL249208A0 (en) 2017-03-30
CA2949887A1 (fr) 2017-06-15
EP3182081B1 (fr) 2018-03-14
FR3045148B1 (fr) 2017-12-08
EP3182081A1 (fr) 2017-06-21
KR102605880B1 (ko) 2023-11-24
TWI710755B (zh) 2020-11-21
KR20170071415A (ko) 2017-06-23
CA2949887C (fr) 2023-02-14
FR3045148A1 (fr) 2017-06-16

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