US9768217B2 - Solid-state image sensing device and camera with asymetric microlenses - Google Patents

Solid-state image sensing device and camera with asymetric microlenses Download PDF

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US9768217B2
US9768217B2 US14/836,124 US201514836124A US9768217B2 US 9768217 B2 US9768217 B2 US 9768217B2 US 201514836124 A US201514836124 A US 201514836124A US 9768217 B2 US9768217 B2 US 9768217B2
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microlens
pixel
photoelectric conversion
light
conversion portion
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US20160071896A1 (en
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Kazunari Kawabata
Taro Kato
Yasuhiro Sekine
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Canon Inc
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Canon Inc
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Assigned to CANON KABUSHIKI KAISHA reassignment CANON KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SEKINE, YASUHIRO, KATO, TARO, KAWABATA, KAZUNARI
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    • H01L27/14627—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H01L27/14605—
    • H01L27/14621—
    • H01L27/14623—
    • H01L27/14629—
    • H01L27/1463—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N5/335—

Definitions

  • the present invention relates to a solid-state image sensing device and a camera.
  • Japanese Patent Laid-Open No. 2006-261247 discloses a solid-state image sensing device including a pixel array in which a plurality of pixels are arranged. Each pixel includes a photoelectric conversion portion formed on a substrate, a light-guide portion arranged on the photoelectric conversion portion, and a microlens arranged on the light-guide portion. Incident light that has passed through the microlens is guided to the photoelectric conversion portion by the light-guide portion.
  • the incident light to a pixel includes a perpendicularly incident light (light having a relatively small inclined angle) component and an obliquely incident light (light having a relatively large inclined angle) component.
  • the obliquely incident light component is larger in the peripheral region of the pixel array than in the central region.
  • the microlenses each having an arcuated section and the light-guide portions are arranged while being shifted with respect to the photoelectric conversion portions in accordance with the positions of the pixels in the pixel array (for example, FIGS. 1 and 2A ).
  • a solid-state image sensing device including a pixel array in which a plurality of pixels are arranged, wherein each of the plurality of pixels comprises: a photoelectric conversion portion arranged in a substrate; a microlens arranged on the photoelectric conversion portion; an insulating member arranged between the substrate and the microlens; and a light-guide portion configured to guide incident light that has passed through the microlens to the photoelectric conversion portion, the light-guide portion being formed in the insulating member and made of a material having a refractive index higher than a refractive index of the insulating member, the pixel array including a central region and a peripheral region, in a pixel located in the peripheral region, the microlens being arranged while being shifted to a side of the central region with respect to the photoelectric conversion portion, and the microlens having a left-right asymmetric shape on a cross section along the shift direction, and a highest portion of the microlens is located
  • FIGS. 1A and 1B are schematic views for explaining an example of the arrangement and pixel structure of a solid-state image sensing device
  • FIGS. 2A to 2C are schematic views for explaining an example of the pixel structure
  • FIG. 3 is a schematic view for explaining an example of the pixel structure
  • FIGS. 4A and 4B are schematic views for explaining an example of optical paths of incident light in an example of the pixel structure
  • FIGS. 5A to 5C are schematic views for explaining a reference example of the pixel structure and optical paths of incident light in the reference example
  • FIGS. 6A and 6B are schematic views for explaining examples of the shape of a microlens
  • FIGS. 7A and 7B are schematic views for explaining an example of the shape of a microlens
  • FIGS. 8A and 8B are schematic views for explaining an example of the pixel structure
  • FIG. 9 is a schematic view for explaining an example of the pixel structure
  • FIGS. 10A to 10C are schematic views for explaining an example of the pixel structure.
  • FIG. 11 is a schematic view for explaining an example of the pixel structure.
  • a solid-state image sensing device IA (to be referred to as a “device IA” hereinafter) according to the first embodiment will be described with reference to FIGS. 1A to 7B .
  • FIG. 1A shows an example of the arrangement of the device IA.
  • the device IA includes, for example, a pixel array A PX in which a plurality of pixels PX are arranged, a driving unit (not shown) configured to drive the plurality of pixels PX, and a readout unit (not shown) configured to read out signals from the plurality of pixels PX.
  • the signal of each pixel PX driven by the driving unit is read out by the readout unit and output to the outside.
  • the pixel array A PX includes a central region R 1 and a peripheral region R 2 .
  • the central region R 1 includes the center of the pixel array A PX and a vicinity thereof, and the peripheral region R 2 is a region other than the central region R 1 .
  • the boundary between the regions R 1 and R 2 can arbitrarily be set.
  • FIG. 1B shows a cross sectional structure of the pixels PX (three pixels) in the peripheral region R 2 taken along a cut line A-B as an example of the structure of the pixels PX in a cross section along a row direction.
  • the cut line A-B can be set in an arbitrary one of directions from the center of the pixel array A PX to the outer edge of the pixel array A PX .
  • Each pixel PX includes, for example, a photoelectric conversion portion PD formed in a substrate SUB such as a semiconductor substrate, a light-guide portion LG formed on the photoelectric conversion portion PD and configured to guide incident light to the photoelectric conversion portion PD, and a microlens ML formed on the light-guide portion LG and configured to condense the incident light.
  • the pixel PX also includes an element (not shown) such as a transistor formed on the substrate SUB and configured to read a signal corresponding to charges generated by the photoelectric conversion portion PD and accumulated.
  • the light-guide portion LG is formed in an insulating member IS formed on the substrate SUB, and made of a material having a refractive index higher than that of the insulating member IS.
  • the insulating member IS is made of, for example, silicon oxide and formed by, for example, stacking a plurality of silicon oxide layers.
  • the light-guide portion LG is made of, for example, silicon nitride. Note that signal lines (not shown) and the like configured to drive or control the pixels PX may be arranged between the silicon oxide layers and between the light-guide portions LG adjacent to each other.
  • ST the above-described structure is represented by “ST” in FIG. 1B .
  • a translucent member F such as a color filter is arranged on the structure ST.
  • the microlenses ML are arranged on the translucent member F.
  • a planarization film may be arranged between the structure ST and the translucent member F or between the translucent member F and the microlenses ML.
  • the above-described optical system is represented by “OP” in FIG. 1B .
  • the microlenses ML are arranged while being shifted to the side of the central region R 1 (A side in FIG. 1B , which will simply be referred to as “A side” hereinafter, whereas the side opposite to the A side will sometimes simply be referred to as “B side”) with respect to the photoelectric conversion portions PD. That is, the center of each microlens ML on the above-described cross section along the cut line A-B is shifted from the center of a corresponding photoelectric conversion portion PD to the side of the center of the pixel array A PX along the cut line A-B.
  • the distance from the A-side end of the microlens ML to the line C is longer than the distance from the B-side end of the microlens ML to the line C.
  • the microlens ML is formed to be left-right asymmetric such that its top (highest point) is shifted to the A side.
  • the microlens ML is formed with its top (highest point) located close to the A side.
  • the center of the above-described photoelectric conversion portion PD is the center between one end and the other end of the photoelectric conversion portion PD defined by an element isolation portion such as STI on the cross section along the cut line A-B.
  • the A- or B-side end of the microlens ML is the lowest portion of the concave upper surface formed between the microlens ML and the adjacent microlens ML.
  • a top P TOP of the microlens ML is preferably located, for example, inside from the outer edge of the light-guide portion LG when viewed from the upper side (when the upper surface of the substrate SUB is viewed from the upper side or in the orthogonal projection of the components to the substrate SUB) such that incident light to the microlens ML is appropriately refracted toward the light-guide portion LG. That is, as shown in FIG. 2A , when a line that is perpendicular to the upper surface of the substrate SUB and passes through the A-side end of the upper surface of the light-guide portion LG is defined as a line E 1 , the top P TOP is preferably located on the B side of the line E 1 .
  • the curvature (average value) of the upper surface in a portion P A on the A side of the top P TOP of the microlens ML is relatively large.
  • the curvature of the upper surface in a portion P B on the B side of the top P TOP of the microlens ML is smaller than the curvature of the upper surface in the portion P A .
  • perpendicularly incident light to the portion P A is refracted to the B side relatively largely, as shown in FIG. 2B .
  • perpendicularly incident light to the portion P B is refracted to the A side relatively small, as shown in FIG. 2C .
  • the curvature is defined as the reciprocal of a radius of curvature.
  • the shift amount of the microlens ML and/or the shift amount of the top P TOP of the microlens ML with respect to the photoelectric conversion portion PD in a certain pixel PX may change depending on the position of the pixel PX in the pixel array A PX . That is, a pixel PX close to an end of the pixel array A PX can be configured to have a shift amount larger than that of a pixel PX close to the center.
  • the shift amount is set within the range of 0% (exclusive) to 50% (exclusive) of the pixel pitch.
  • FIG. 3 is a schematic view for explaining the sizes of the photoelectric conversion portion PD, the light-guide portion LG, and the microlens ML.
  • d1 be the width of the photoelectric conversion portion PD
  • d2 be the width of the lower surface of the light-guide portion LG
  • d3 be the width of the upper surface of the light-guide portion LG
  • d4 be the width of the microlens ML.
  • the photoelectric conversion portion PD is a charge accumulation region (for example, n-type semiconductor region if the charges are electrons) capable of accumulating charges generated by photoelectric conversion.
  • the width d1 of the photoelectric conversion portion PD is, for example, the width on the upper surface of the photoelectric conversion portion PD (upper surface side of the substrate SUB).
  • FIG. 4A shows optical paths of obliquely incident light in this structure.
  • the microlens ML is arranged while being shifted to the A side with respect to the photoelectric conversion portion PD (and the light-guide portion LG). Both obliquely incident light to the portion P A of the microlens ML and obliquely incident light to the portion P B are guided to the photoelectric conversion portion PD (and the light-guide portion LG).
  • FIG. 4B shows optical paths of perpendicularly incident light in this structure.
  • the curvature of the upper surface in the portion P A is relatively large, perpendicularly incident light to the portion P A is refracted to the B side largely.
  • the perpendicularly incident light to the portion P A is appropriately refracted toward the photoelectric conversion portion PD (and the light-guide portion LG).
  • FIGS. 5A and 5B show the cross sectional structure of a pixel PX′ according to the comparative example, like FIGS. 4A and 4B , and the like.
  • the pixel PX′ includes a microlens ML′ formed to be left-right symmetric. Note that the height of the microlens ML and the height of the microlens ML′ are assumed to be equal to each other for the sake of comparison. In the example shown in FIGS.
  • the microlens ML′ is arranged while being shifted to the A side with respect to the photoelectric conversion portion PD (and the light-guide portion LG) by the same amount as the above-described left-right asymmetric microlens ML.
  • FIG. 5A shows optical paths of obliquely incident light in the comparative example.
  • FIG. 5B shows optical paths of perpendicularly incident light.
  • the microlens ML′ is arranged while being shifted to the A side with respect to the photoelectric conversion portion PD (and the light-guide portion LG). Obliquely incident light is guided to the photoelectric conversion portion PD (and the light-guide portion LG) via the microlens ML′.
  • perpendicularly incident light to the A-side end of the microlens ML may become stray light L 1 without being guided to the light-guide portion LG.
  • the shift amount of the microlens ML′ with respect to the photoelectric conversion portion PD (and the light-guide portion LG) may be decreased as compared to the examples of FIGS. 5A and 5B , as in a pixel PX′′ shown in FIG. 5C as another comparative example.
  • perpendicularly incident light to the B-side end of the microlens ML′ may become stray light L 2 without being guided to the light-guide portion LG.
  • both obliquely incident light and perpendicularly incident light can appropriately be refracted toward the light-guide portion LG and made incident on the photoelectric conversion portion PD.
  • this structure is advantageous in improving pixel sensitivity.
  • FIG. 6A is a schematic view for explaining an example of an array A ML (to be referred to as a “microlens array A ML ” hereinafter) of the plurality of microlenses ML arranged in correspondence with the plurality of pixels PX.
  • each microlens ML in the peripheral region R 2 is arranged while being shifted to the side of the central region R 1 with respect to the photoelectric conversion portion PD, and formed to be left-right asymmetric such that the top P TOP is shifted to the side of the central region R 1 .
  • FIG. 6A is a schematic view for explaining an example of an array A ML (to be referred to as a “microlens array A ML ” hereinafter) of the plurality of microlenses ML arranged in correspondence with the plurality of pixels PX.
  • each microlens ML in the peripheral region R 2 is arranged while being shifted to the side of the central region R 1 with respect to the photoelectric conversion portion PD, and formed to be
  • the microlens ML has a shape having a major axis parallel to the shift direction (in other words, a shape elongated in the shift direction) when viewed from the upper side.
  • the microlens ML has a so-called tear drop shape such that the width in a direction crossing the shift direction has the maximum value on the side of the central region R 1 when viewed from the upper side.
  • each microlens ML in the central region R 1 is located almost immediately above a corresponding photoelectric conversion portion PD and has an almost circular shape when viewed from the upper side.
  • the microlens ML in the peripheral region R 2 may have a shape necessary to form a shape with the top P TOP shifted to the side of the central region R 1 , for example, a round triangular shape or trapezoidal shape when viewed from the upper side, in addition to the above example.
  • FIG. 6B is a schematic view for explaining another example of the microlens array A ML .
  • the microlens ML has a shape that is almost flat on the side of the central region R 1 but round on the opposite side when viewed from the upper side.
  • the microlens ML can have a shape with the top P 10 shifted to the side of the central region R 1 .
  • the microlens array A ML may be formed by, for example, forming the lens members of the microlenses ML and then developing them by exposure processing using a tone mask.
  • the microlens array A ML may be formed by, for example, patterning the lens members into a triangular pyramidal shape with its apex shifted to the side of the central region R 1 and then performing heating processing.
  • the microlens array A ML may be formed by another known semiconductor manufacturing method.
  • the shape of the microlens ML corresponding to the unit pixel PX will be described below with reference to FIGS. 7A and 7B as another example of the microlens array A ML .
  • the area of the microlens ML per unit pixel PX can be increased, and the incident light condensation efficiency can be improved.
  • the X direction in FIGS. 7A and 7B is defined as the above-described shift direction (the shift direction of the microlens ML and the top P TOP ), the Y direction is defined as a direction that is parallel to the upper surface of the microlens array A ML and crosses the X direction, and the Z direction is defined as a direction perpendicular to the upper surface of the microlens array A ML .
  • FIG. 7A is a plan view for explaining the shape of the microlens ML, and FIG. 7B is a cross sectional view in the X direction.
  • p be the pixel pitch.
  • the height of the microlens ML at X x2 in the end region on the right side in FIGS.
  • the width of the microlens ML is d2, h2 ⁇ H1, and d2 ⁇ d1.
  • the upper surface of the microlens ML on the cross section in the Y direction preferably has an almost arcuated shape.
  • the position and shape of the microlens ML have mainly been described.
  • the position and shape of another member may be changed as needed.
  • a structure in which the light-guide portion LG is not shifted with respect to the photoelectric conversion portion PD has been described.
  • the shape or structure of the light-guide portion LG of a certain pixel PX may be changed in accordance with the position of the pixel PX.
  • the light-guide portion LG may have a structure in which the inclination of the side surface on the A side is gentler than the inclination of the side surface on the B side (that is, when the angle made by the upper surface of the substrate SUB and the side surface of the light-guide portion LG is defined as an inclined angle, the inclined angle on the A side is smaller than the inclined angle on the B side).
  • a pixel (to be referred to as a pixel PX 2 ) according to the second embodiment will be described with reference to FIGS. 8A and 8B .
  • This embodiment is different from the above-described first embodiment mainly in that the pixel PX 2 further includes an inner lens IL (or inter-layer lens).
  • the inner lens IL is arranged on, for example, a translucent member F 1 such as a planarization film formed on a structure ST, and the above-described microlens ML is arranged on a translucent member F 2 such as a planarization film formed on the inner lens IL.
  • incident light condensed by the microlens ML is further condensed by the inner lens IL and guided to a light-guide portion LG.
  • the inner lens IL may be arranged while being shifted to the A side with respect to a photoelectric conversion portion PD and/or formed to be left-right asymmetric such that its top is shifted to the A side, like the above-described microlens ML.
  • a pixel (to be referred to as a pixel PX 3 ) according to the third embodiment will be described with reference to FIG. 9 .
  • This embodiment is different from the above-described first embodiment mainly in that a member RM that has a light-reflective property or light-shielding property and is configured to prevent mixture of colors between adjacent pixels is arranged in an optical system OP.
  • the member RM is formed on, for example, a translucent member F 1 such as a planarization film formed on a structure ST.
  • the member RM can be formed between adjacent pixels so as to partition each pixel PX 3 .
  • the member RM can be made of a metal such as aluminum, copper, or tungsten, and may be made of silicon oxide or an air gap.
  • a color filter CF of a color (for example, red, green, or blue) corresponding to the position of the pixel PX 3 may be arranged between the members RM.
  • the member RM may be arranged while being shifted to the A side with respect to a photoelectric conversion portion PD in correspondence with the shift of the above-described microlens ML or top P TOP .
  • leakage of light to adjacent pixels can be prevented by the member RM having a light-reflective property or light-shielding property and arranged between the adjacent pixels.
  • the member RM having a light-reflective property or light-shielding property and arranged between the adjacent pixels.
  • the fourth embodiment will be described with reference to FIGS. 10A to 10C .
  • the above-described microlens ML may be applied to a focus detection pixel in addition to an imaging pixel.
  • FIG. 10A shows an example of the arrangement of a focus detection pixel PXa.
  • the pixel PXa further includes a light-shielding member M 1 a configured to limit incident light.
  • the light-shielding member M 1 a is arranged between a substrate SUB and a light-guide portion LG from a line C to the B side.
  • the light-shielding member M 1 a is made of, for example, a metal and arranged in a first interconnection layer (interconnection layer closest to the substrate SUB). According to this arrangement, the pixel PXa detects a light beam on the B side out of incident light to a microlens ML by a photoelectric conversion portion PDa.
  • FIG. 10B shows an example of the arrangement of a focus detection pixel PXb.
  • the pixel PXb further includes a light-shielding member M 1 b arranged between the substrate SUB and the light-guide portion LG from the line C to the A side.
  • the pixel PXab detects a light beam on the A side out of incident light to the microlens ML by a photoelectric conversion portion PDb.
  • the above-described pixels PXa and PXb are paired, and focus detection based on a phase difference detection method can be performed using these pixel signals.
  • FIG. 10C shows an example of the arrangement of a focus detection pixel PXab.
  • the pixel PXab further includes the pair of photoelectric conversion portions PDa and PDb, and detects the above-described light beam on the B side and the light beam on the A side by the photoelectric conversion portions PDa and PDb, respectively. According to this arrangement as well, focus detection based on a phase difference detection method can be performed.
  • the microlens ML is applicable not only to an imaging pixel but also to a focus detection pixel. According to this embodiment, the same effect as in the above-described first embodiment can be obtained even for the focus detection pixel.
  • the fifth embodiment will be described with reference to FIG. 11 .
  • the above-described microlens ML may be applied to a back-side illumination solid-state image sensing device.
  • an optical system OP, a substrate SUB, and a structure ST are arranged sequentially from the light incident side (sequentially from the upper side of FIG. 11 ).
  • the above-described light-guide portion LG formed in the structure ST is not located between the optical system OP and the substrate SUB.
  • a reflecting member RM 2 is provided in the substrate SUB so as to, for example, surround a photoelectric conversion portion PD.
  • the reflecting member RM 2 can reflect incident light that has passed through a microlens ML toward the photoelectric conversion portion PD and thus prevent mixture of colors between adjacent pixels.
  • the reflecting member RM 2 can be made of, for example, at least one of polysilicon, silicon oxide, a metal, and an air gap.
  • the reflecting member RM 2 includes an element isolation portion (deep trench isolation) formed from a polysilicon member and silicon oxide members formed on both sides of the polysilicon member, as shown in FIG. 11 .
  • the element isolation portion may be formed from the upper surface to the lower surface of the substrate SUB.
  • the microlens ML is also applicable to a back-side illumination solid-state image sensing device. According to this embodiment, it is possible to obtain the same effect as in the above-described first embodiment and also advantageously prevent mixture of colors between adjacent pixels.
  • a solid-state image sensing device included in an imaging system represented by a camera has been described in the above embodiments.
  • the concept of the imaging system includes not only devices mainly aiming at shooting but also apparatuses (for example, personal computer or portable terminal) having an auxiliary shooting function.
  • the imaging system can include the solid-state image sensing device described in the above embodiments and a processing unit that processes a signal from the solid-state image sensing device.
  • the processing unit can include, for example, an A/D converter and a processor that processes digital data output from the A/D converter.

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US11178326B2 (en) * 2019-06-19 2021-11-16 Samsung Electronics Co., Ltd. Image sensor and electronic device including image sensor

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