US9614019B2 - Input device - Google Patents

Input device Download PDF

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Publication number
US9614019B2
US9614019B2 US14/722,375 US201514722375A US9614019B2 US 9614019 B2 US9614019 B2 US 9614019B2 US 201514722375 A US201514722375 A US 201514722375A US 9614019 B2 US9614019 B2 US 9614019B2
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Prior art keywords
transistor
input device
electrode
base material
flexible base
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US14/722,375
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US20150349041A1 (en
Inventor
Hiroyuki Miyake
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • H01L27/3262—
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • H01L27/323—
    • H01L27/3265—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper

Definitions

  • One embodiment of the present invention relates to an input device.
  • one embodiment of the present invention is not limited to the above technical field.
  • the technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method.
  • one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter.
  • examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a method for driving any of them, and a method for manufacturing any of them.
  • the social infrastructures relating to means for transmitting information have advanced. This has made it possible to acquire, process, and send out many pieces and various kinds of information with the use of an information processing device not only at home or office but also at other visiting places.
  • Patent Document 1 a display device having high adhesiveness between a structure body by which a light-emitting layer is divided and a second electrode layer is known.
  • a cellular phone in which a display device is provided on a front side and on an upper side in the longitudinal direction of a housing (Patent Document 2).
  • An object of one embodiment of the present invention is to provide a novel input device that can be manufactured at low cost or has high reliability. Another object is to provide a novel input device.
  • One embodiment of the present invention is an input device that includes a first flexible base material, a second flexible base material, and a sensor circuit including a transistor portion including a first transistor and a light-emitting element including a second transistor.
  • the first transistor and the second transistor are provided on the first flexible base material side.
  • Another embodiment of the present invention is the input device in which the sensor circuit is configured to sense an object close to or in contact with a surface of the second flexible base material.
  • Another embodiment of the present invention is the input device in which part of a step of manufacturing the first transistor is the same as part of a step of manufacturing the second transistor.
  • Another embodiment of the present invention is the input device in which the first transistor and the second transistor are connected to respective external circuits over the first flexible base material.
  • Another embodiment of the present invention is the input device in which the first transistor and the second transistor are connected to one external circuit.
  • Another embodiment of the present invention is the input device in which the second transistor includes a first electrode formed using a mask including slits.
  • Another embodiment of the present invention is the input device in which the first transistor includes an oxide semiconductor layer as a semiconductor layer.
  • Another embodiment of the present invention is the input device in which the second transistor includes an oxide semiconductor layer as a semiconductor layer.
  • Another embodiment of the present invention is the input device in which the first transistor and the second transistor each include an oxide semiconductor layer as a semiconductor layer.
  • Another embodiment of the present invention is an input device that includes at least a sensor circuit, a flexible base material supporting the sensor circuit, and a light-emitting element.
  • the sensor circuit can supply a sensor signal based on a change in capacitance.
  • the sensor circuit includes at least first to fifth wirings, first to third transistors, and first and second capacitors.
  • the input device including a sensor circuit provided over one flexible base material.
  • the sensor circuit and the light-emitting element each include a transistor and part of a step of manufacturing the transistor included in the sensor circuit is the same as part of a step of manufacturing the transistor included in the light-emitting element; thus, the input device can be manufactured at lower cost than that in the case where the sensor circuit and the light-emitting element are separately formed over different base materials.
  • each transistor is necessarily connected to an external circuit.
  • the transistors are provided over one flexible base material; thus, the transistors may be connected to the external circuit over the one flexible base material. Accordingly, connection defects are less likely to occur, which leads to an increase in the reliability of the input device. Furthermore, the sensor circuit and the light-emitting element can be driven by one external circuit; the size of the input device can be reduced accordingly.
  • the flexible base material means a base material that is “capable of being bent”.
  • the light-emitting element includes at least a substance capable of emitting light, a first electrode and a second electrode between which the substance capable of emitting light is provided, and the first transistor.
  • one of a first electrode and a second electrode of a transistor refers to a source electrode and the other refers to a drain electrode.
  • the input device might include any of the following modules in its category: a module in which a connector such as a flexible printed circuit (FPC) or a tape carrier package (TCP) is attached to an input device; a module having a TCP provided with a printed wiring board at the end thereof; and a module having an integrated circuit (IC) directly mounted over a substrate over which a sensor circuit is formed by a chip on glass (COG) method.
  • a connector such as a flexible printed circuit (FPC) or a tape carrier package (TCP) is attached to an input device
  • FPC flexible printed circuit
  • TCP tape carrier package
  • COG chip on glass
  • the terms “source” and “drain” of a transistor interchange with each other depending on the polarity of the transistor or the levels of potentials applied to the terminals.
  • a terminal to which a lower potential is applied is called a source
  • a terminal to which a higher potential is applied is called a drain.
  • a terminal to which a higher potential is applied is called a source.
  • the term “source” of a transistor means a source region that is part of a semiconductor film functioning as an active layer or a source electrode connected to the semiconductor film.
  • the term “drain” of the transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film.
  • the term “gate” means a gate electrode.
  • connection means electrical connection and corresponds to the case of a circuit configuration in which current, voltage, or a potential can be supplied or transmitted. Therefore, a circuit configuration in which connection is made does not necessarily refers to a state of direct connection, and also includes a circuit configuration in which connection is indirectly made through a circuit element such as a wiring, a resistor, a diode, or a transistor so that current, voltage, and a potential can be supplied or transmitted.
  • connection in this specification and the like also means such a case where one conductive film has functions of a plurality of components.
  • a novel input device that can be manufactured, at low cost or has high reliability can be provided.
  • a novel input device can be provided. Note that the description of these effects does not disturb the existence of other effects.
  • One embodiment of the present invention does not necessarily have all the effects. Other effects will be apparent from and can be derived from the description of the specification, the drawings, the claims, and the like.
  • FIG. 1A is a circuit diagram illustrating a structure of a sensor circuit of one embodiment and FIGS. 1 B 1 and 1 B 2 are timing charts illustrating a driving method thereof;
  • FIG. 2 is a cross-sectional view illustrating a structure of an input device of one embodiment
  • FIG. 3 is a top view illustrating arrangement of sensor circuits of one embodiment
  • FIGS. 4A to 4C are top views each illustrating arrangement of electrodes of one embodiment
  • FIGS. 5A and 5B are top views of masks for manufacturing an electrode of one embodiment.
  • FIGS. 6 A 1 , 6 A 2 , 6 A 3 , 6 B 1 , 6 B 2 , 6 C 1 , and 6 C 2 are each a projection view illustrating a structure of an information processing device of one embodiment.
  • One embodiment of the present invention is an input device including at least a sensor circuit, a flexible base material supporting the sensor circuit, and a light-emitting element.
  • FIG. 1A a structure and a driving method of a sensor circuit which can be used in an input device 200 of one embodiment of the present invention are described using a circuit diagram of FIG. 1A and timing charts shown in FIGS. 1B 1 and 1 B 2 .
  • the sensor circuit includes at least a scan line G 1 , a scan line G 2 , a wiring VRES, a wiring VP, a wiring VSS, a first transistor TR 1 , a second transistor TR 2 , a third transistor TR 3 , a capacitor C 0 , a capacitor C 1 , and a monitor line ML.
  • a first electrode included in the capacitor C 1 is provided on the second flexible base material side, and the other components are provided on the first flexible base material side.
  • an organic material As the flexible base material, an organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used.
  • a material with which passage of impurities is inhibited can be favorably used as the flexible base material.
  • a material with a vapor permeability of lower than or equal to 10 ⁇ 5 g/(m 2 ⁇ day), preferably lower than or equal to 10 ⁇ 6 g/(m 2 ⁇ day) can be favorably used.
  • Examples of the flexible base material are organic materials such as a resin, a resin film, and a plastic film.
  • the flexible base material examples include inorganic materials such as a metal plate and a thin glass plate with a thickness of greater than or equal to 10 ⁇ m and less than or equal to 50 ⁇ m.
  • the flexible base material examples include composite materials such as a resin film to which a metal plate, a thin glass plate, or a film of an inorganic material is attached using a resin layer.
  • the flexible base material examples include composite materials such as a resin or a resin film into which a fibrous or particulate metal, glass, or inorganic material is dispersed.
  • thermosetting resin or an ultraviolet curable resin can be used for a resin layer.
  • polyester, polyolefin, polyamide, polyimide, polycarbonate, an acrylic resin, or the like can be used as the resin, the resin film, or the plastic film.
  • non-alkali glass soda-lime glass, potash glass, crystal glass, or the like can be used as the glass plate.
  • a metal oxide film, a metal nitride film, a metal oxynitride film, or the like can be used as the inorganic material.
  • silicon oxide, silicon nitride, silicon oxynitride, an alumina film, or the like can be used as the metal oxide film, the metal nitride film, or the metal oxynitride film.
  • SUS silicon dioxide
  • aluminum aluminum, or the like provided with an opening can be used as the metal plate.
  • a resin such as an acrylic resin, a urethane resin, an epoxy resin, or a resin having a siloxane bond can be used as the thermosetting resin or the ultraviolet curable resin.
  • any of various conductive films can be used as the wirings.
  • a metal element selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, tungsten, nickel, yttrium, zirconium, silver, and manganese; an alloy containing any of the above-described metal elements as a component; an alloy containing any of the above-described metal elements in combination; or the like can be used.
  • one or more elements selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten are preferably contained.
  • an alloy of copper and manganese is suitably used in microfabrication with the use of a wet etching method.
  • a two-layer structure in which a titanium film is stacked over an aluminum film a two-layer structure in which a titanium film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a titanium nitride film, a two-layer structure in which a tungsten film is stacked over a tantalum nitride film or a tungsten nitride film, a three-layer structure in which a titanium film, an aluminum film, and a titanium film are stacked in this order, or the like can be used.
  • a stacked structure in which a film of a metal selected from metals such as titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium, or an alloy film or a nitride film containing one or more metals selected from these metals is stacked over an aluminum film can be used.
  • metals such as titanium, tantalum, tungsten, molybdenum, chromium, neodymium, and scandium
  • an alloy film or a nitride film containing one or more metals selected from these metals is stacked over an aluminum film.
  • a light-transmitting conductive material containing indium oxide, tin oxide, or zinc oxide may be used.
  • transistors of a bottom-gate type, a top-gate type, or the like can be used.
  • a second electrode of the capacitor C 1 is electrically connected to a gate of the first transistor TR 1 , a first electrode of the capacitor C 0 , and a first terminal of the third transistor TR 3 .
  • a second electrode of the capacitor C 0 is electrically connected to the wiring VP through which a control signal capable of controlling a potential can be supplied.
  • a first terminal of the first transistor TR 1 is electrically connected to the wiring VSS through which, for example, a ground potential can be supplied, and a second terminal of the first transistor TR 1 is electrically connected to a first terminal of the second transistor TR 2 .
  • a gate of the second transistor TR 2 is electrically connected to the scan line G 1 through which a selection signal can be supplied, and a second terminal of the second transistor TR 2 is electrically connected to the monitor line ML.
  • a gate of the third transistor TR 3 is electrically connected to the scan line G 2 through which a selection signal can be supplied, and a second terminal of the third transistor TR 3 is electrically connected to the wiring VRES through which, for example, a ground potential can be supplied.
  • a portion where the second electrode of the capacitor C 1 , the first electrode of the capacitor C 0 , the gate of the first transistor TR 1 , and the first terminal of the third transistor TR 3 are electrically connected to one another is referred to as a node A.
  • the sensor circuit can sense an object such as a finger close to or in contact with a surface of the second flexible base material.
  • FIGS. 1 B 1 and 1 B 2 are timing charts for describing a method for driving the sensor circuit of one embodiment of the present invention.
  • FIG. 1 B 1 shows a state where the object is not sensed and
  • FIG. 1 B 2 shows a state where the object is sensed.
  • a first step by supplying a selection signal to the scan line G 2 to turn on the third transistor TR 3 , the node A and the wiring VRES are electrically connected to each other, so that the potential of the node A is set to a predetermined potential, e.g., a ground potential. After that, the supply of the selection signal to the scan line G 2 is stopped to turn off the third transistor TR 3 .
  • a predetermined potential e.g., a ground potential.
  • the potential of the node A is set to a predetermined potential based on the capacitance of the capacitor C 0 and the capacitor C 1 .
  • a third step by supplying a selection signal to the scan line G 1 to turn on the second transistor TR 2 , a signal based on the change in the potential of the node A is supplied to the monitor line ML.
  • the amount of change in the potential of the signal supplied to the monitor line ML is decreased.
  • a fourth step the supply of the selection signal to the scan line G 1 is stopped to turn off the second transistor TR 2 .
  • FIG. 2 is a cross-sectional view illustrating a structure of the input device 200 of one embodiment of the present invention.
  • the input device 200 of one embodiment of the present invention includes a first flexible base material, a second flexible base material, a portion between the first flexible base material and the second flexible base material, and a connection portion that is connected to an external circuit formed over the first flexible base material.
  • Connection between the input device and the external circuit is made using a connection terminal provided in a portion that is not used for display, specifically, a peripheral portion of the input device. Connection between the input device and the external circuit is made by electrically connecting a flexible printed circuit (FPC) and the connection terminal to each other.
  • FPC flexible printed circuit
  • a sensor circuit 290 includes a transistor portion 290 a where the transistors are formed and a region where a transistor is not formed and an electrode for sensing is formed.
  • the sensor circuit 290 includes a first flexible base material 201 and an insulating layer 202 formed over the first flexible base material 201 .
  • the sensor circuit 290 further includes a gate electrode 203 formed over the insulating layer 202 , a gate insulating layer 204 formed over the gate electrode 203 , a semiconductor layer 205 formed over the gate insulating layer 204 , and a pair of electrodes 206 formed over the semiconductor layer 205 .
  • the sensor circuit 290 further includes an insulating layer 207 formed over the pair of electrodes 206 , an insulating layer 208 formed over the insulating layer 207 , an electrode 209 formed over the insulating layer 208 , and an insulating layer 210 formed over the electrode 209 .
  • the sensor circuit 290 further includes an electrode 211 a that is formed over the insulating layer 210 and electrically connected to one of the pair of electrodes 206 and an insulator 212 formed over the electrode 211 a to cover an end of the electrode 211 a.
  • the sensor circuit 290 further includes a second flexible base material 218 , an electrode 216 b formed on the second flexible base material 218 , an insulating layer 217 and an electrode 216 a formed on the electrode 216 b , an insulating layer 215 formed on the electrode 216 a , and a light-blocking layer 214 formed on the insulating layer 215 .
  • the sensor circuit 290 is formed by bonding the first flexible base material 201 and the second flexible base material 218 with a sealant 213 .
  • the sensor circuit 290 includes, on a surface of the second flexible base material 218 on which the sensor circuit is not formed, an insulating layer 219 and an anti-reflective film 220 formed over the insulating layer 219 .
  • the insulating layer 219 and the anti-reflective film 220 may be formed after the first flexible base material 201 and the second flexible base material 218 are bonded to each other with the sealant 213 .
  • the transistor portion 290 a is formed to be covered with the light-blocking layer 214 .
  • the electrode 209 , the electrode 211 a , and the insulating layer 210 form the capacitor C 0 , and the electrode 211 a , the electrode 216 a , and the insulators provided therebetween form the capacitor C 1 .
  • the sensor circuit is formed over a base material different from the first flexible base material 201 , the base material and the sensor circuit are separated from each other, and then, the sensor circuit and the first flexible base material 201 are bonded to each other. In that case, a bonding layer may be provided between the first flexible base material 201 and the sensor circuit.
  • the following method may be employed: the sensor circuit is formed over a base material different from the second flexible base material 218 , the base material and the sensor circuit are separated from each other, and then, the sensor circuit and the second flexible base material 218 are bonded to each other. In that case, a bonding layer may be provided between the second flexible base material 218 and the sensor circuit.
  • the insulating layer 202 needs to have a function of preventing entry of moisture or oxygen from the outside.
  • an inorganic material layer of silicon oxide, silicon nitride, or silicon oxynitride, a stack of any of these materials, a composite layer of any of these materials, or the like can be selected in accordance with conditions required for the input device of this embodiment.
  • the light-emitting element 291 contains an organic light-emitting compound, it is necessary to pay careful attention to entry of moisture or oxygen because, for example, the properties of the organic light-emitting compound deteriorate owing to moisture or oxygen.
  • a single metal layer, a composite layer, or the like can be selected in accordance with the conditions required for the input device of this embodiment.
  • a metal with low resistance e.g., copper or aluminum
  • a metal with low resistance e.g., copper or aluminum
  • a composite layer or an alloy of a metal with low resistance and another metal may be used.
  • a semiconductor layer containing an oxide semiconductor, amorphous silicon, polycrystalline silicon crystallized by processing such as laser annealing, or the like can be selected in accordance with the conditions required for the input device of this embodiment.
  • a Group 14 element, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer.
  • a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be used.
  • a film represented by an In-M-Zn oxide which contains at least indium (In), zinc (Zn), and M (a metal such as Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf) is preferably included.
  • a metal such as Al, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf
  • both In and Zn are preferably contained.
  • gallium (Ga), tin (Sn), hafnium (Hf), aluminum (Al), zirconium (Zr), and the like can be given.
  • lanthanoid such as lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium (Lu) can be given.
  • an “In—Ga—Zn-based oxide” means an oxide containing In, Ga, and Zn as its main components and there is no limitation on the ratio of In:Ga:Zn.
  • the In—Ga—Zn-based oxide may contain another metal element in addition to In, Ga, and Zn.
  • a single metal layer, a composite layer, or the like can be selected in accordance with the conditions required for the input device of this embodiment.
  • a metal with low resistance e.g., copper or aluminum
  • a metal with low resistance e.g., copper or aluminum
  • a composite layer or an alloy of a metal with low resistance and another metal may be used.
  • a single metal layer, a composite layer, or the like can be selected in accordance with the conditions required for the input device of this embodiment.
  • a metal with low resistance e.g., copper or aluminum
  • a metal with low resistance e.g., copper or aluminum
  • a composite layer or an alloy of a metal with low resistance and another metal may be used.
  • the sealant 213 has a higher refractive index than the air. In the case where light is extracted to the sealant 213 side, the sealant 213 also serves as an optical element.
  • the insulating layer 217 needs to have a function of preventing entry of moisture or oxygen from the outside.
  • an inorganic material layer of silicon oxide, silicon nitride, or silicon oxynitride, a stack of any of these materials, a composite layer of any of these materials, or the like can be selected in accordance with the conditions required for the input device of this embodiment.
  • the light-emitting element 291 contains an organic light-emitting compound, it is necessary to pay careful attention to entry of moisture or oxygen because, for example, the properties of the organic light-emitting compound deteriorate owing to moisture or oxygen.
  • the light-emitting element 291 having a top emission structure in which light is emitted to a side opposite to a base material over which a wiring for supplying electric power to a light-emitting element when seen from an organic material layer capable of emitting light is provided is described.
  • the light-emitting element 291 includes an electrode 211 b which is formed over the insulating layer 210 and electrically connected to one of the pair of electrodes 206 included in the transistor, the insulator 212 which is formed over the electrode 211 b and covers an end of the electrode 211 b , an organic material layer 221 which is formed over the electrode 211 b and the insulator 212 and capable of emitting light, and an electrode 222 which is formed over the insulator 212 and the organic material layer 221 capable of emitting light.
  • an organic electroluminescent element is used as the light-emitting element 291 in this embodiment
  • a display element electronic ink that performs display by an electrophoretic method, an electronic liquid powder (registered trademark) method, an electrowetting method, or the like can be used.
  • the organic material layer 221 As the organic material layer 221 , a low molecular organic EL material, a high molecular organic EL material, or an inorganic EL material can be used. In the case of using a high molecular organic EL material, the organic material layer 221 can also be formed by a coating method.
  • a thin film containing a light-emitting material that emits light (fluorescence) by singlet excitation (a singlet compound), a thin film containing a light-emitting material that emits light (phosphorescence) by triplet excitation (a triplet compound), or a thin film containing a singlet compound and a triplet compound can be used.
  • the organic material layer 221 a stack of a thin film containing a singlet compound and a thin film containing a triplet compound can be used.
  • carbon black As the light-blocking layer 214 , carbon black, a metal oxide, a composite oxide containing a solid solution of a plurality of metal oxides, or the like can be used.
  • a metal material, pigment, dye, or the like can be used for the coloring layer.
  • full-color display can be achieved.
  • the organic material layer 221 can also emit red (R) light, green (G) light, and blue (B) light.
  • the coloring layer 223 is not necessarily used; however, color of light emitted from the organic material layer 221 can be adjusted by the coloring layer.
  • a connection portion 292 for connection to an external circuit includes the first flexible base material 201 , the insulating layer 202 formed over the first flexible base material 201 , and the gate insulating layer 204 formed over the insulating layer 202 .
  • connection portion 292 further includes a wiring 230 formed over the gate insulating layer 204 , the insulating layer 207 including an opening overlapping with the wiring 230 , and an electrode 211 .
  • the electrode 211 is connected to the wiring 230 electrically connected to the input device of this embodiment through the opening in the insulating layer 207 .
  • the electrode 211 prevents the wiring 230 from being exposed to the outside environment.
  • the electrode 211 be formed at the same time as the electrode 211 a in the transistor portion 290 a and the electrode 211 b in the light-emitting element 291 .
  • a transparent conductive oxide of indium oxide, tin oxide, zinc oxide, a compound thereof, or the like can be used, for example.
  • an anisotropic conductive film 224 can electrically connect the electrode 211 and an FPC 225 .
  • a plurality of (m ⁇ n) sensor circuits 290 are arranged in a matrix in the input device 200 .
  • the sensor circuit 290 ( m, n ) is electrically connected to the scan line G 1 ( m ), the scan line G 2 ( m ), and the monitor line ML(n).
  • Embodiment 1 A method for driving each of the sensor circuits is described in Embodiment 1.
  • the sensor circuit 290 supplies a signal based on a change in the potential of the node A to the monitor line ML.
  • the scan line G 1 ( 1 ) to the scan line G 1 ( m ) and the scan line G 2 ( 1 ) to the scan line G 2 ( m ) are electrically connected to a driver circuit GD.
  • the driver circuit GD (e.g., a shift register) is used for the sensor circuits arranged in a matrix, selection signals are sequentially supplied to the scan line G 1 ( 1 ) to the scan line G 1 ( m ) and the scan line G 2 ( 1 ) to the scan line G 2 ( m ), and signals supplied to the monitor line ML are read; thus, where in the input device 200 the object such as a finger is close to or in contact with can be sensed.
  • the monitor line ML( 1 ) to the monitor line ML(n) are electrically connected to a converter CONY.
  • the converter CONY may convert signals supplied through the monitor line ML( 1 ) to the monitor line ML(n).
  • FIGS. 4A to 4C each illustrate a plane layout example of the sensor circuit 290 , the transistor portion 290 a , one of the electrodes 211 b of the light-emitting element 291 , and the light-blocking layer 214 .
  • the light-emitting elements (also refer to pixels) (R, G, and B) are each surrounded by the light-blocking layer 214 . Furthermore, the transistor portion 290 a of the sensor circuit is covered with the light-blocking layer 214 . The end of the electrode 211 b is covered with the light-blocking layer 214 .
  • FIGS. 4A to 4C An arrangement example in the sensor circuit 290 is illustrated in FIGS. 4A to 4C . Although an example where twelve light-emitting elements are arranged in one sensor circuit is shown, the number of pixels is not limited thereto and may be determined as necessary. The area of the sensor circuit 290 may be equal to that of the electrode 216 b.
  • FIG. 2 illustrates one light-emitting element
  • FIGS. 4A to 4C each show an example where one transistor portion 290 a and twelve light-emitting elements 291 are arranged in each sensor circuit 290 .
  • a method for forming the electrode 222 of the light-emitting element 291 is described.
  • the electrode 222 is selectively formed with a mask and needs to be prevented from being connected to the transistor portion 290 a.
  • the plane layout of the electrode 222 is described with reference to FIG. 2 , FIG. 3 , FIGS. 4A to 4C , and FIGS. 5A and 5B .
  • the electrode 222 is selectively formed in a specific portion of the input device 200 .
  • masks 500 illustrated in FIGS. 5A and 5B are used.
  • a plurality of slits 501 are formed in the mask 500 .
  • a conductive film can be selectively formed.
  • the electrode 222 including openings in specific portions can be formed in the input device 200 .
  • the opening of the electrode 222 corresponds to a portion where the slit 501 is not formed.
  • the opening of the electrode 222 corresponds to a portion where the slit 501 is formed.
  • any of the transistor portions 290 a in FIG. 2 and FIGS. 4A to 4C is placed.
  • the electrode 222 is formed so as not to include the transistor portion 290 a.
  • the electrode 222 is formed so as not to include the transistor portion 290 a.
  • a conductive film may be formed with the mask illustrated in FIG. 5A which has the slits extending in the lateral direction
  • a conductive film may be formed with the mask illustrated in FIG. 5B which has the slits extending in the longitudinal direction
  • the transistor portion 290 a is formed in openings of the electrode 222 which intersect with each other.
  • FIGS. 6 A 1 , 6 A 2 , 6 A 3 , 6 B 1 , 6 B 2 , 6 C 1 , and 6 C 2 a structure of an information processing device of one embodiment of the present invention will be described with reference to FIGS. 6 A 1 , 6 A 2 , 6 A 3 , 6 B 1 , 6 B 2 , 6 C 1 , and 6 C 2 .
  • FIGS. 6 A 1 to 6 C 2 illustrate the information processing devices of embodiments of the present invention.
  • FIGS. 6 A 1 to 6 A 3 are projection views illustrating an information processing device of one embodiment of the present invention.
  • FIGS. 6 B 1 and 6 B 2 are projection views illustrating an information processing device of one embodiment of the present invention.
  • FIGS. 6 C 1 and 6 C 2 are a top view and a bottom view of an information processing device of one embodiment of the present invention.
  • An information processing device 3000 A includes an input/output portion 3120 and a housing 3101 supporting the input/output portion 3120 (see FIGS. 6 A 1 to 6 A 3 ).
  • the information processing device 3000 A further includes an arithmetic portion, a memory portion storing a program that is executed by the arithmetic portion, and a power source such as a battery supplying power for driving the arithmetic portion.
  • the housing 3101 stores the arithmetic portion, the memory portion, the battery, and the like.
  • the information processing device 3000 A can display information on its side surface and/or top surface.
  • a user of the information processing device 3000 A can supply operation instructions by using a finger in contact with the side surface and/or the top surface.
  • An information processing device 3000 B includes the input/output portion 3120 and an input/output portion 3120 b (see FIGS. 6 B 1 and 6 B 2 ).
  • the information processing device 3000 B further includes the housing 3101 and a belt-shaped flexible housing 3101 b that support the input/output portion 3120 .
  • the information processing device 3000 B further includes the housing 3101 supporting the input/output portion 3120 b.
  • the information processing device 3000 B further includes an arithmetic portion, a memory portion storing a program that is executed by the arithmetic portion, and a power source such as a battery supplying power for driving the arithmetic portion.
  • the housing 3101 stores the arithmetic portion, the memory portion, the battery, and the like.
  • the information processing device 3000 B can display information on the input/output portion 3120 supported by the housing 3101 and the belt-shaped flexible housing 3101 b.
  • a user of the information processing device 3000 B can supply operation instructions by using a finger in contact with the input/output portion 3120 .
  • An information processing device 3000 C includes the input/output portion 3120 and the housings 3101 and 3101 b supporting the input/output portion 3120 (see FIGS. 6 C 1 and 6 C 2 ).
  • the input/output portion 3120 and the housing 3101 b have flexibility.
  • the information processing device 3000 C further includes an arithmetic portion, a memory portion storing a program that is executed by the arithmetic portion, and a power source such as a battery supplying power for driving the arithmetic portion.
  • the housing 3101 stores the arithmetic portion, the memory portion, the battery, and the like.
  • the information processing device 3000 C can be folded in two by bending the housing 3101 b.

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  • Computer Networks & Wireless Communication (AREA)
  • Electroluminescent Light Sources (AREA)
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