US9436204B2 - Band-gap reference voltage circuit - Google Patents

Band-gap reference voltage circuit Download PDF

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Publication number
US9436204B2
US9436204B2 US14/816,262 US201514816262A US9436204B2 US 9436204 B2 US9436204 B2 US 9436204B2 US 201514816262 A US201514816262 A US 201514816262A US 9436204 B2 US9436204 B2 US 9436204B2
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diode
band
operational amplifier
anode
reference voltage
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US20160062382A1 (en
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Terukazu Nagakura
Tadashi Matsuoka
Fuminori Morisawa
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc

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  • a band-gap reference voltage circuit As an example of a circuit that generates a reference voltage with low temperature dependence, a band-gap reference voltage circuit is known (for example, see Japanese Unexamined Patent Application Publication No. 2013-191095).
  • One end of the resistor 120 is electrically connected to an output terminal of the operational amplifier 110 and the other end of the resistor 120 is electrically connected to a non-inverting input terminal of the operational amplifier 110 .
  • One end of the resistor 121 is electrically connected to the output terminal of the operational amplifier 110 and the other end of the resistor 121 is electrically connected to an inverting input terminal of the operational amplifier 110 .
  • An anode of the diode 130 is electrically connected to the non-inverting input terminal of the operational amplifier 110 and a cathode of the diode 130 is grounded.
  • V F V T ⁇ ln ( I/I S +1) (2)
  • V T is a thermal voltage KT/q (where k is the Boltzmann constant, T is the absolute temperature and q is an elementary electrical charge), I is a forward current and I S is a reverse saturation current.
  • V BG ( R 2 +R 3 )/( R 3 +R P ) ⁇ V T ⁇ ln ( m )+ V T ⁇ ln (1/( mI S ⁇ ( R 3 ⁇ R P )) ⁇ V T ⁇ ln ( m )) (7)
  • FIG. 5 is a diagram illustrating an example of the relationship between the parasitic resistance R P and the band-gap reference voltage V BG .
  • a design value of the band-gap reference voltage V BG is around 1.23 V. If the parasitic resistance R P is about 40 ⁇ , the band-gap reference voltage V BG is around 1.25 V. That is, the band-gap reference voltage V BG is shifted by around 20 mV from the design value.
  • the present disclosure was made in light of the above-described circumstances and an object thereof is to reduce an error in a band-gap reference voltage.
  • a band-gap reference voltage circuit includes an operational amplifier, a first diode having an anode electrically connected to a non-inverting input terminal of the operational amplifier and a grounded cathode, a first resistor having one end electrically connected to an output terminal of the operational amplifier and another end electrically connected to the anode of the first diode, a second resistor having one end electrically connected to the output terminal of the operational amplifier and another end electrically connected to an inverting input terminal of the operational amplifier, a third resistor having one end electrically connected to the inverting input terminal of the operational amplifier, and a second diode having an anode electrically connected to another end of the third resistor and a grounded cathode.
  • One end of a first wiring line for electrically connecting the non-inverting input terminal of the operational amplifier and the anode of the first diode to each other, and one end of a second wiring line for electrically connecting the first resistor and the anode of the first diode to each other, are both connected to a connection terminal of the first diode stacked on the anode of the first diode.
  • a band-gap reference voltage is output from the output terminal of the operational amplifier.
  • an error in a band-gap reference voltage can be reduced.
  • FIG. 1 is a diagram illustrating the configuration of a band-gap reference voltage circuit of an embodiment of the present disclosure
  • FIG. 2 is a diagram illustrating an example of an outline layout of the band-gap reference voltage circuit illustrated in FIG. 1 ;
  • FIG. 3 is a diagram illustrating a comparative example of an outline layout
  • FIG. 4 is a diagram illustrating the typical configuration of a band-gap reference voltage circuit.
  • FIG. 5 is a diagram illustrating an example of the relationship between a parasitic resistance R P and a band-gap reference voltage V BG .
  • FIG. 1 is a diagram illustrating the configuration of a band-gap reference voltage circuit of an embodiment of the present disclosure.
  • a band-gap reference voltage circuit 100 includes an operational amplifier 110 , a resistor 120 (first resistor), a resistor 121 (second resistor), a resistor 122 (third resistor), a diode 130 (first diode) and a diode 131 (second diode).
  • Constituent elements and electrical connections of the band-gap reference voltage circuit 100 are the same as those of the band-gap reference voltage circuit 400 and therefore the description thereof is omitted.
  • a connection terminal X of the anode of the diode 130 and a connection terminal Y of a non-inverting input terminal of the operational amplifier 110 are connected to each other by a wiring line 140 .
  • the connection terminal X of the anode of the diode 130 and a connection terminal Z of the resistor 120 are connected to each other by a wiring line 150 .
  • FIG. 2 is a diagram illustrating an example of an outline layout of the band-gap reference voltage circuit 100 illustrated in FIG. 1 .
  • a region 200 in which the diodes 130 and 131 are arranged, a region 210 in which the operational amplifier 110 is arranged and a region 220 in which the resistors 120 to 122 are arranged are illustrated.
  • the connection terminal X stacked on the anode of the diode 130 , the connection terminal Y stacked on the non-inverting input terminal of the operational amplifier 110 and the connection terminal Z stacked on one end of the resistor 120 are illustrated.
  • one end of the wiring line 140 is for electrically connecting the non-inverting input terminal of the operational amplifier 110 and the anode of the diode 130 to each other is connected to the connection terminal X of the anode of the diode 130 .
  • one end of the wiring line 150 for electrically connecting the resistor 120 and the anode of the diode 130 to each other is connected to the connection terminal X of the anode of the diode 130 .
  • the connection terminal X is arranged directly above the anode of the diode 130 .
  • the length of a wiring line between a point A (the connection point between resistor 120 and diode 130 ) and the anode of the diode 130 can be made comparatively short. Therefore, the parasitic resistance R P can be made comparatively small.
  • one end of the wiring line 140 for electrically connecting the non-inverting input terminal of the operational amplifier 110 and the anode of the diode 130 to each other, and one end of the wiring line 150 for electrically connecting the resistor 120 and the anode of the diode 130 to each other are connected to the connection terminal X stacked on the anode of the diode 130 , as illustrated in FIG. 1 and FIG. 2 .
  • the parasitic resistance R P due to the wiring line between the point A (the connection point between the resistor 120 and the diode 130 ) and the anode of the diode 130 can be made small compared with the case of the layout exemplified in FIG. 3 .
  • the parasitic resistance R P is on the order of several tens of ohms in the case of the layout illustrated in FIG. 3 , whereas it is possible to make the parasitic resistance R P be on the order of several hundred milliohms in the case of the layout illustrated in FIG. 2 .
  • an error in the band-gap reference voltage V BG can be reduced.
  • connection terminal X of the diode 130 is arranged directly above the anode of the diode 130
  • the position of the connection terminal X is not limited to this position.
  • the connection terminal X may be arranged not directly above but in the vicinity of the anode of the diode 130 .

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
US14/816,262 2014-08-28 2015-08-03 Band-gap reference voltage circuit Active US9436204B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-174415 2014-08-28
JP2014174415A JP6083421B2 (ja) 2014-08-28 2014-08-28 バンドギャップ基準電圧回路

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US20160062382A1 US20160062382A1 (en) 2016-03-03
US9436204B2 true US9436204B2 (en) 2016-09-06

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JP (1) JP6083421B2 (zh)
CN (1) CN105388960B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9886047B2 (en) * 2015-05-01 2018-02-06 Rohm Co., Ltd. Reference voltage generation circuit including resistor arrangements
FR3072842A1 (fr) * 2017-10-20 2019-04-26 Stmicroelectronics (Rousset) Sas Circuit electronique avec dispositif de surveillance de l'alimentation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103159A (en) * 1989-10-20 1992-04-07 Sgs-Thomson Microelectronics S.A. Current source with low temperature coefficient
US20130241524A1 (en) 2012-03-14 2013-09-19 Fumihiro Inoue Band gap reference circuit
US20140043096A1 (en) 2012-08-09 2014-02-13 Adrian Finney Polysilicon diode bandgap reference
US20150168969A1 (en) * 2013-12-16 2015-06-18 Joseph Shor Accurate power-on detector

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2634685B2 (ja) * 1990-07-24 1997-07-30 シャープ株式会社 半導体装置の電圧降下回路
JP3584536B2 (ja) * 1995-03-31 2004-11-04 セイコーエプソン株式会社 出力電圧の温度特性を変化させる機構を有する電圧源回路、およびその機構を有する液晶用安定化電源回路
JP3244057B2 (ja) * 1998-07-16 2002-01-07 日本電気株式会社 基準電圧源回路
US6853164B1 (en) * 2002-04-30 2005-02-08 Fairchild Semiconductor Corporation Bandgap reference circuit
WO2004025730A1 (ja) * 2002-08-09 2004-03-25 Renesas Technology Corp. 半導体装置およびそれを用いたメモリカード
DE10237122B4 (de) * 2002-08-13 2011-06-22 Infineon Technologies AG, 81669 Schaltung und Verfahren zur Einstellung des Arbeitspunkts einer BGR-Schaltung
US6885178B2 (en) * 2002-12-27 2005-04-26 Analog Devices, Inc. CMOS voltage bandgap reference with improved headroom
US8446140B2 (en) * 2009-11-30 2013-05-21 Intersil Americas Inc. Circuits and methods to produce a bandgap voltage with low-drift
CN102622031B (zh) * 2012-04-09 2014-04-02 中国科学院微电子研究所 一种低压高精度带隙基准电压源
JP6259399B2 (ja) * 2012-09-27 2018-01-10 ローム株式会社 チップダイオードおよびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103159A (en) * 1989-10-20 1992-04-07 Sgs-Thomson Microelectronics S.A. Current source with low temperature coefficient
US20130241524A1 (en) 2012-03-14 2013-09-19 Fumihiro Inoue Band gap reference circuit
JP2013191095A (ja) 2012-03-14 2013-09-26 Mitsumi Electric Co Ltd バンドギャップリファレンス回路
US20140043096A1 (en) 2012-08-09 2014-02-13 Adrian Finney Polysilicon diode bandgap reference
CN103681796A (zh) 2012-08-09 2014-03-26 英飞凌科技股份有限公司 多晶硅二极管带隙基准
US20150168969A1 (en) * 2013-12-16 2015-06-18 Joseph Shor Accurate power-on detector

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CN105388960B (zh) 2017-07-14
JP2016051212A (ja) 2016-04-11
CN105388960A (zh) 2016-03-09
JP6083421B2 (ja) 2017-02-22
US20160062382A1 (en) 2016-03-03

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