US9063429B2 - Negative developing method and negative developing apparatus - Google Patents

Negative developing method and negative developing apparatus Download PDF

Info

Publication number
US9063429B2
US9063429B2 US14/142,048 US201314142048A US9063429B2 US 9063429 B2 US9063429 B2 US 9063429B2 US 201314142048 A US201314142048 A US 201314142048A US 9063429 B2 US9063429 B2 US 9063429B2
Authority
US
United States
Prior art keywords
substrate
developer
cleaning liquid
rear face
speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
US14/142,048
Other languages
English (en)
Other versions
US20140199638A1 (en
Inventor
Tadashi Miyagi
Tsuyoshi Mitsuhashi
Takehiro WAJIKI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Semiconductor Solutions Co Ltd
Original Assignee
Screen Semiconductor Solutions Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Semiconductor Solutions Co Ltd filed Critical Screen Semiconductor Solutions Co Ltd
Assigned to SOKUDO CO., LTD. reassignment SOKUDO CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MITSUHASHI, TSUYOSHI, WAJIKI, TAKEHIRO, MIYAGI, TADASHI
Publication of US20140199638A1 publication Critical patent/US20140199638A1/en
Assigned to SCREEN SEMICONDUCTOR SOLUTIONS CO., LTD. reassignment SCREEN SEMICONDUCTOR SOLUTIONS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SOKUDO CO., LTD.
Application granted granted Critical
Publication of US9063429B2 publication Critical patent/US9063429B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Definitions

  • the present invention relates to a negative developing method and a negative developing apparatus to develop a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a substrate for an optical disk (hereinafter simply called a substrate) with a developer containing an organic solvent.
  • a circuit pattern is formed on a resist film on a substrate with the use of lithography.
  • the circuit pattern is formed through a series of processes. Specifically, a photoresist is applied to a surface of a substrate, a circuit pattern is baked on a resist film on the surface of the substrate with an exposing machine, and then a developer is supplied to the exposed resist film to perform a developing process. In the developing process of these, a developing method with puddle development has been used widely.
  • the puddle development is a developing method performed in a state where a substrate is spun around a vertical axis while being held horizontally and a developer is supplied from a tip outlet of a straight nozzle to the center of the substrate to coat the resist film on the entire surface of the substrate with the developer filmily.
  • the circuit pattern formed on the resist film has a line width adjusted in accordance with a developing time.
  • the resist film is coated with the developer for a given time to form an expected circuit pattern.
  • a cleaning liquid is supplied to the substrate to perform cleaning. When the cleaning is finished, the substrate is spun to be dried through a spin-dry effect (as disclosed in Japanese Unexamined Patent Publication No. 2008-91751A, page 3, for example).
  • a positive developing method (also called positive development) using an alkaline developer such as a TMAH (Tetra Methyl Ammonium Hydroxide) solution has been conventionally used.
  • a negative developing method (also called negative development) using a developer containing an organic solvent such as butyl acetate has been used recently.
  • deionized water is used as a cleaning liquid
  • a cleaning liquid containing an organic solvent such as MIBC (Methyl Iso Butyl Carbinol) is used (as disclosed in Japanese Unexamined Patent Publication No. 2011-28281A, page 79, for example).
  • the negative developing method with a conventional configuration has the following problem.
  • the developing quality may be reduced accordingly.
  • components in the resist film are dissolved into the developer to obtain a dissolved product.
  • the dissolved product easily remains on the substrate also after cleaning. This may cause failure in the development.
  • the developer since the developer easily remain on the substrate also after the cleaning, it becomes difficult to stop the development at an appropriate timing. This may cause difficulty in suitably control of a line width in the circuit pattern.
  • the present invention has been made regarding the state of the art noted above, and its one object is to provide a negative developing method and a negative developing apparatus that allow maintained development quality with a reduced usage amount of a cleaning liquid.
  • a negative developing method including:
  • a developing step of performing development by supplying a developer containing an organic solvent onto a resist film formed on a surface of a substrate and coating the resist film with the supplied developer;
  • a rear face cleaning step of cleaning a rear face of the substrate by supplying a cleaning liquid only to the rear face of the substrate and spinning the substrate at a second speed lower than the first speed after the surface drying step;
  • a rear face drying step of drying the rear face of the substrate by spinning the substrate after the rear face cleaning step is a rear face drying step of drying the rear face of the substrate by spinning the substrate after the rear face cleaning step.
  • the substrate is spun at the first speed in the surface drying step, the first speed being relatively higher. Spinning at higher speeds causes a relatively large centrifugal force to act on the developer on the resist film. Consequently, the developer can be removed from the surface of the substrate without supplying the cleaning liquid to the substrate. As a result, the development can be stopped at an appropriate timing.
  • the developer contains an organic solvent, the dissolved product in the developer can be removed together with the developer from the surface of the substrate by the centrifugal force. Thereafter, the surface of the substrate is dried. Accordingly, a residual dissolved product can be prevented from remaining on the dried surface of the substrate. This allows suppressing failure in the development caused by the dissolved product.
  • the substrate is spun at the second speed, the second speed being relatively low. Consequently, the cleaning liquid supplied to the rear face of the substrate can be prevented from scattering around the substrate, and thus allows expanding only on the rear face of the substrate suitably. As a result, in the rear face cleaning step, the rear face of the substrate can be cleaned suitably while the dried surface of the substrate is kept clean.
  • the use of the cleaning liquid only on the rear face of the substrate allows a suppressed usage amount of the cleaning liquid.
  • the relatively-high spinning speed of the substrate in the surface drying step and the relatively-low spinning speed of the substrate in the rear face cleaning step can achieve suitably maintained quality of the negative development.
  • the developing step is performed, and thereafter the surface drying process is performed without supplying the cleaning liquid to the substrate.
  • the surface drying process removal of the developer and the dissolved product as well as drying of the surface of the substrate is performed at one stroke. Accordingly, reduction in consumption of the cleaning liquid, control of proceeding of the developing step with high accuracy, and avoidance of the residual dissolved product on the dried substrate can be performed at one stroke. That is, a usage amount of the cleaning liquid can be reduced with the maintained development quality.
  • the negative developing method of the present invention further includes:
  • a developing step of performing development by supplying a developer containing an organic solvent to the resist film on the surface of the substrate to cover the resist film with the supplied developer;
  • the substrate is spun at the relatively-high first speed in the surface drying step.
  • Such spinning at high speeds causes the centrifugal force to act on the developer on the resist film.
  • This allows the developer to be removed suitably from the surface of the substrate without supplying the cleaning liquid to the substrate. Consequently, the development can be stopped at an appropriate timing.
  • the developer contains an organic solvent, the dissolved product can be removed together with the developer from the surface of the substrate with the centrifugal force. Thereafter, the surface of the substrate is dried. Consequently, the residual dissolved product on the surface of the substrate can be suppressed.
  • the development quality can be maintained.
  • the first speed is preferably from 1500 rpm to 2500 rpm.
  • a sufficiently large centrifugal force allows the developer to be removed from the surface of the substrate.
  • proceeding of the development can be stopped rapidly after the surface drying step commences. That is, the line width of the circuit pattern can be controlled with high accuracy.
  • the above embodiment of the present invention further includes a rear face cleaning step.
  • the rear face cleaning step the rear face is cleaned by supplying the cleaning liquid only to the rear face of the substrate and spinning the substrate at a second speed lower than the first speed after the surface drying step.
  • the cleaning liquid is supplied only to the rear face of the substrate. Consequently, a significantly reduced usage amount of the cleaning liquid can be achieved.
  • spinning the substrate at low speeds allows suppressing airborne splashes or particles of the cleaning liquid around the substrate after the rear face cleaning step commences. Accordingly, the splashes of the cleaning liquid can be prevented from adhering on the surface of the substrate, avoiding reduction in quality of the development.
  • the rear face of the substrate is dried by spinning the substrate at a third speed higher than the second speed in the rear face drying step. In this step, the rear face of the substrate can be dried immediately. Consequently, a time for a series of processes concerning the negative development can be shortened.
  • the negative developing apparatus includes:
  • a substrate holder configured to hold a substrate horizontally
  • a substrate spinning section configured to spin the substrate held horizontally with the substrate holder
  • a developer supplying section configured to supply a developer containing an organic solvent to a surface of the substrate held with the substrate holder
  • a cleaning liquid supplying section configured to supply a cleaning liquid only to a rear face of the substrate
  • a controller configured to control the substrate spinning section, the developer supplying section and the cleaning liquid supplying section so as to perform a developing step, a surface-drying step, a rear-face cleaning step and a rear-face drying step, in the developing step development being performed by supplying the developer from the developer supplying section to the surface of the substrate to coat a resist film on the surface of the substrate with the developer, in the surface drying step the surface of the substrate being performed by spinning the substrate at a first speed, in the rear face cleaning step the rear face of the substrate being cleaned by supplying the cleaning liquid from the cleaning liquid supplying section and spinning the substrate at a second speed lower than the first speed, and in the rear-face drying step the rear face of the substrate being dried by spinning the substrate.
  • the substrate spinning section spins the substrate at the relatively-high first speed in the surface drying step. Spinning at high speeds causes a relatively large centrifugal force to act on the developer on the resist film. This achieves suitable removal of the developer from substrate without supplying the cleaning liquid to the surface of the substrate. Consequently, the developing step can be stopped at an appropriate timing. Moreover, since the developer contains an organic solvent, the dissolved product can be removed together with the developer from the surface of the substrate with the centrifugal force. Thereafter, the surface of the substrate is dried. That is, a residual dissolved product can be prevented from remaining on the dried surface of the substrate. This allows suppressing failure of the development caused by the dissolved product.
  • the substrate spinning section spins the substrate at the relatively-low second speed. This achieves suppression of scattering the cleaning liquid supplied to the rear face of the substrate around the substrate. This also allows the cleaning liquid to expand suitably on the rear face of the substrate. As a result, the rear face cleaning step achieves cleaning the rear face of the substrate suitably while the dried surface of the substrate is kept clean.
  • the use of the cleaning liquid only to the rear face of the substrate achieves a suppressed usage amount of the cleaning liquid.
  • the relatively-high spinning speed of the substrate in the surface drying step and the relatively-low spinning speed of the substrate in the rear face cleaning step can achieve the suitably maintained quality of the negative development.
  • the developing step is performed, and thereafter the surface drying step is performed without supplying the cleaning liquid to the substrate.
  • the surface drying step performs removal of the developer and the dissolved product and drying of the substrate surface at one stroke.
  • the negative developing apparatus includes:
  • a substrate holder configured to hold a substrate horizontally
  • a substrate spinning section configured to spin the substrate held horizontally with the substrate holder
  • a developer supplying section configured to supply a developer containing an organic solvent to a surface of the substrate held with the substrate holder
  • a controller configured to control the substrate spinning section and the developer supplying section so as to supply the developer from the developer supplying section and cover the resist film formed on the surface of the substrate with the developer to perform a developing step, and thereafter to dry the surface of the substrate while the developing step is stopped by spinning the substrate at a first speed to remove the developer on the resist film with a centrifugal force.
  • the substrate spinning section spins the substrate at the relatively-high first speed in the surface drying step. Then a relatively-large centrifugal force acts on the developer on the resist film. This achieves removal of the developer from the substrate without supplying the cleaning liquid to the surface of the substrate. Consequently, the developing step can be stopped at an appropriate timing. Moreover, since the developer contains an organic solvent, the dissolved product can be removed together with the developer from the surface of the substrate with the centrifugal force. Thereafter, the surface of the substrate is dried. That is, the residual dissolved product can be prevented from remaining on the dried surface of the substrate. As noted above, the maintained development quality can be maintained with a suppressed usage amount of the cleaning liquid.
  • the first speed is preferably from 1500 rpm to 2500 rpm.
  • a sufficiently large centrifugal force allows the developer to be removed from the surface of the substrate.
  • proceeding of the development can be stopped rapidly after the surface drying step commences. That is, the line width of the circuit pattern can be controlled with high accuracy.
  • the above aspect of the present invention further includes a cleaning liquid supplying section configured to supply a cleaning liquid only to a rear face of the substrate, and that the controller controls the cleaning liquid supplying section so as to supply the cleaning liquid after the surface drying step and controls the substrate spinning section so as clean the rear face of the substrate by spinning the substrate at a second speed lower than the first speed.
  • the cleaning liquid is supplied only to the rear face of the substrate. Consequently, a significantly reduced usage amount of the cleaning liquid can be achieved.
  • spinning the substrate at low speeds allows suppressing airborne splashes or particles of the cleaning liquid around the substrate after the rear face cleaning step commences. Accordingly, the splashes of the cleaning liquid can be prevented from adhering on the surface of the substrate, avoiding reduction in quality of the development.
  • the controller in the above aspect of the present invention preferably controls the substrate spinning section so as to dry the rear face of the substrate by spinning the substrate at a third speed higher than the second speed in the rear face drying step.
  • the rear face of the substrate can be dried immediately. Consequently, a time for a series of processes concerning the negative development can be shortened.
  • FIG. 1 is a longitudinal sectional view schematically illustrating a negative developing apparatus according to one embodiment of the present invention.
  • FIG. 2 is a flow chart of operations according to the embodiment.
  • FIG. 3 is a graph illustrating a relationship between an operation time and a spinning speed of a substrate according to the embodiment.
  • FIG. 4 is a flow chart of operations according to one comparative example.
  • FIG. 5 is a graph illustrating a relationship between an operation time and a spinning speed of a substrate according to the comparative example.
  • FIG. 6 is a graph illustrating a relationship between a spinning speed of a substrate and a time for drying a surface of the substrate.
  • FIG. 1 is a longitudinal sectional view schematically illustrating a negative developing apparatus according to one embodiment of the present invention.
  • a negative developing apparatus includes a spin chuck 1 configured to move upward and downward.
  • the spin chuck 1 holds a substrate W horizontally.
  • a lower part of the spin chuck 1 is connected to a rotary shaft 3 .
  • a rotary motor 5 is disposed on a lower part of the rotary shaft 3 .
  • the rotary motor 5 spins the spin chuck 1 and the rotary shaft 3 about a vertical axis.
  • a scatter preventive cup 7 is disposed around the spin chuck 1 .
  • the spin chuck 1 may be fixed and the scatter preventive cup 7 may move upward and downward.
  • the spin chuck 1 corresponds to a substrate holder in the present invention.
  • the rotary motor 5 corresponds to a substrate spinning section in the present invention.
  • a drain tube 9 is in communication with a bottom of the scatter preventive cup 7 .
  • a developer supplying nozzle 11 is arranged adjacent to the scatter preventive cup 7 .
  • the developer supplying nozzle 11 supplies a developer to a surface of the substrate W.
  • the developer supplying nozzle 11 is, for example a straight nozzle having an outlet formed on a tip end thereof.
  • the developer supplying nozzle 11 moves between a supply position (by solid lines in drawings) over the spin chuck 1 and a standby position (by chain double-dashed lines in drawings) away from over the scatter preventive cup 7 .
  • the outlet of the developer supplying nozzle 11 is located immediately above the center of the substrate W.
  • the standby position of the developer supplying nozzle 11 is not limited to a position away from over the scatter preventive cup 7 , and thus may be modified appropriately.
  • the developer supplying nozzle 11 may be located over the scatter preventive cup 7 .
  • the developer supplying nozzle 11 corresponds to a developer supplying section in the present invention.
  • a cleaning liquid supplying nozzle 13 is arranged around a lower portion of the spin chuck 1 .
  • the cleaning liquid supplying nozzle 13 supplies a cleaning liquid to the rear face of the substrate W.
  • the cleaning liquid supplying nozzle 13 is, for example, a straight nozzle having an outlet at a tip end thereof.
  • the cleaning liquid supplying nozzle 13 corresponds to a cleaning liquid supplying section in the present invention.
  • the developer supplying nozzle 11 is in fluid communication with a developer supplying source 16 via a developer supplying pipe 15 into which a deaerating module 17 , a filter 19 , and a switch control valve 21 are inserted.
  • the developer supplying source 16 stores the developer containing an organic solvent.
  • the developer is fed to the developer supplying nozzle 11 with pressure of inactive gas. Examples of the organic solvent in the developer include butyl acetate.
  • the deaerating module 17 deaerates the developer to be fed.
  • the developer through the developer supplying nozzle 11 is supplied and stopped in accordance with switching on and off of the switch control valve 21 .
  • the cleaning liquid supplying nozzle 13 is in fluid communication with a cleaning liquid supplying source 24 via a cleaning liquid supplying pipe 23 into which a cleaning liquid supplying pipe 23 , a deaerating module 25 , a filter 27 , and a switch control valve 29 are inserted.
  • the cleaning liquid supplying source 24 stores a cleaning liquid containing an organic solvent.
  • the cleaning liquid is fed to the cleaning liquid supplying nozzle 13 with pressure of inactive gas. Examples of the organic solvent in the cleaning liquid include MIBC.
  • the deaerating module 25 deaerates the developer to be fed.
  • the developer through the developer supplying nozzle 13 is supplied and stopped in accordance with switching on and off of the switch control valve 29 .
  • a control device 31 controls en bloc upward and downward movement of the spin chuck 1 , spinning of the rotary motor 5 , movement of the developer supplying nozzle 11 , feeding of the developer in the developer supplying source 16 , driving of the deaerating modules 17 , 25 , switching on and off of the switch control valves 21 , 29 , and feeding of the cleaning liquid in the cleaning liquid supplying source 24 .
  • the control device 31 corresponds to a controller in the present invention.
  • FIG. 2 is a flow chart of operations according to the embodiment.
  • FIG. 3 is a graph illustrating a relationship between an operation time and a spinning speed of the substrate according to the embodiment.
  • an exposed substrate W having the resist film applied thereto is already held with the spin chuck 1 , and the developer supplying nozzle 11 is moved to the supply position.
  • Step S 1 developing Step
  • the control device 31 controls the rotary motor 5 , the developer supplying source 16 , the deaerating module 17 , and the switch control valve 21 to spin the horizontally-held substrate W at a given speed and to start supplying the developer containing an organic solvent from the developer supplying nozzle 11 to the center of the surface of the substrate W.
  • the given speed is, for example, 1500 rpm.
  • the control device 31 performs control so as to spin the substrate W and supply the developer for a period from time t0 to time t1.
  • the developer supplied to the substrate W expands over the surface of the substrate W so as to cover the resist film formed on the surface of the substrate W.
  • the period from time t0 to time t1 is, for example, 5 seconds.
  • the control device 31 performs control so as to stop supplying the developer onto the substrate W and to stop spinning the substrate W. Then, the developer eject nozzle 11 is moved to a standby position. At this time, the developer is coated on the resist film.
  • Such development proceeds for a period from time t1 to time t2 with this state maintained.
  • the period from time t1 to time t2 is, for example, fifteen seconds.
  • An unexposed portion of the resist film is dissolved by the developer during the developing step, thereby being a dissolved product.
  • the developing step is completed at time t2.
  • a step during the period from time t0 to time t2 corresponds to the developing step in the present invention.
  • Step S 2 (Surface Drying Step)
  • the surface drying step starts simultaneously with completion of the developing step.
  • the control device 31 performs control to start spinning the substrate W at the first speed at time t2.
  • the first speed is, for example, 2000 rpm.
  • the relatively-high first speed causes a relatively-large centrifugal force. Consequently, the developer on the substrate W is scattered out of the substrate W with the centrifugal force, and thus is immediately removed from the surface of the substrate W.
  • the dissolved product is also removed together with the developer from the surface of the substrate W. The developer and the dissolved product are removed in this way. Thereafter, the surface of the substrate W is dried rapidly.
  • the control device 31 continues control so as to spin the substrate W at the first speed for a period from time t2 to time t3, whereby the surface drying step is performed.
  • the period from time t2 to time t3 is, for example, ten seconds.
  • the surface drying step is completed at time t3.
  • a step during the period from time t2 to time t3 corresponds to the surface drying step in the present invention.
  • Step S 3 (Rear Face Cleaning Step)
  • the rear face cleaning step starts simultaneously with completion of the surface drying step.
  • the control device 31 performs control so as to switch the spinning speed of the substrate W from the first speed to the second speed at time t3.
  • the second speed is lower than the first speed.
  • the second speed is, for example, 500 rpm.
  • the control device 31 starts supplying the cleaning liquid to the rear face of the substrate W from the cleaning liquid supply nozzle 13 . Since the second speed is relatively low, the cleaning liquid supplied to the rear face of the substrate W expands only on the rear face of the substrate suitably without scattering around the substrate. Consequently, atmosphere on the surface of the substrate W is kept clean while impurities such as dusts on the rear face of the substrate W are removed with the cleaning liquid.
  • the control device 31 performs control so as to continue supplying the cleaning liquid for a period of time t3 to time t4 to perform the rear face cleaning step mentioned above.
  • the period from time t3 to time t4 is, for example, five seconds.
  • the control device 31 performs control so as to stop supplying the cleaning liquid at time t4, thereby completing the rear face cleaning step.
  • a step during the period from time t3 to time t4 corresponds to the rear face cleaning step in the present invention.
  • Step S 4 (Rear Face Drying Step)
  • the rear face drying step starts simultaneously with completion of the rear face cleaning step.
  • the control device 31 performs control so as to switch the spinning speed of the substrate W from the second speed to the third speed, thereby starting the rear face drying step.
  • the third speed is higher than the second speed, and is for example 2000 rpm.
  • the rear face of the substrate W can be dried rapidly with a spin-dry effect.
  • the control device 31 performs control so as to spin the substrate W at the third speed for a period from time t4 to time t5.
  • the period from time t4 to time t5 is, for example, ten seconds.
  • the control device 31 performs control so as to stop spinning the substrate W at time t5, thereby completing the rear face drying step.
  • a step during the period from time t4 to time t5 corresponds to the rear face drying step in the present invention.
  • the negative developing apparatus omits cleaning of the surface of the substrate W with the cleaning liquid. Consequently, effective reduction in usage amount of the cleaning liquid can be achieved.
  • the substrate W is spun at the first speed. This achieves removal of the developer on the substrate W immediately and stopping the development rapidly. Accordingly, controlling a timing of starting the surface drying step allows a developing time to be controlled with high accuracy. That is, the line width of the circuit pattern can be controlled with high accuracy.
  • the surface drying step can achieve removal of the developer (stopping development), removal of the dissolved product (prevention of failure in the development), and drying of the surface of the substrate W at one stroke. Consequently, a time for a series of processes can be shortened.
  • the rear face of the substrate W is cleaned with the cleaning liquid.
  • the cleaning liquid is supplied to the rear face of the substrate W only, achieving effective reduction in usage amount of the cleaning liquid.
  • the cleaning liquid contains an organic solvent, the substrate W after the negative developing step can be cleaned suitably.
  • the substrate W is spun at the second speed. This makes it difficult to generate splashes or mist of the cleaning liquid. Even if a splash or mist is generated, it is difficult for it to be airborne around the substrate. Consequently, atmosphere on the surface of the substrate W can be kept clean. As a result, further adhesion of splashes, mist, or dust on the surface of the substrate W can be avoided. This eliminates reduction in quality of processing the substrate W.
  • the substrate W is spun at the third speed. This achieves rapid drying of the rear face of the substrate W. Consequently, a further shortened time for a series of the negative development can be achieved.
  • FIG. 4 is a flow chart of development according to one comparative example.
  • FIG. 5 is a graph illustrating a relationship between an operation time and a spinning speed of a substrate according to the comparative example.
  • negative development proceeds by performing three steps. i.e., a developing step, a cleaning step, and a drying step, in this order.
  • a developing step the surface and the rear face of the substrate W are each cleaned.
  • a drying step the surface and the rear face of the substrate W are cleaned at one stroke.
  • a cleaning liquid is supplied to the surface and the rear face of the substrate W. This needs a large amount of the cleaning liquid.
  • the cleaning liquid is supplied only to the rear face of the substrate W. This achieves a more reduced usage amount of cleaning liquid than that in the comparative example.
  • FIG. 6 is a graph illustrating a relationship between a spinning speed of the substrate and a time of drying the surface of the substrate.
  • a drying time shortens as the spinning speed increases. Particularly, at a spinning speed in a range of 1500 rpm or less, a drying time sharply shortens as the spinning speed increases. On the other hand, at a spinning speed in a range of 1500 rpm or more, a drying time gradually shortens as the spinning speed increases. Accordingly, the drying time gradually approaches the minimum. As a result, a spinning speed of 1500 rpm to 2500 rpm can achieve a sufficiently reduced drying time of approximately four to five seconds.
  • the first speed is preferably from 1500 rpm to 2500 rpm. In this case, the developer can be removed much rapidly. Consequently, the first speed in the range mentioned above allows highly accurate control of the line width in the circuit pattern.
  • the developer supplying nozzle 11 and the cleaning liquid supply nozzle 13 are each straight nozzles.
  • the nozzles are not limited to this shape. That is, a slit nozzle having a slit outlet on a lower end thereof may be used.
  • the developer is supplied to the substrate while the substrate is spun in Step S 1 .
  • the substrate may be spun at time t0 before the developer is supplied.
  • the substrate may be spun at time t0 after the developer is supplied.
  • the substrate does not need to be spun for a period from time t0 to time t1.
  • the developer is supplied and thereafter spinning of the substrate W is stopped for a period from time t1 to time t2 to perform the developing step in Step S 1 .
  • This is not limitative. That is, after the developer is supplied, the substrate W may be spun at an appropriate speed for a period from time t1 to time t2.
  • the cleaning liquid supplying source 24 is individually disposed for supplying the cleaning liquid to the cleaning liquid supply nozzle 13 .
  • the developer used for the negative development contains an organic solvent
  • the developer may be used as a cleaning liquid used for cleaning the rear face of the substrate W. In this case, the developer may also be used as the cleaning liquid.
  • the cleaning liquid supplying pipe 23 is in fluid communication with the developer supplying source 16 . Opening and closing of the switch control valves 21 , 29 is controlled to switch a target portion to which the developer stored in the developer supplying source 16 is fed. That is, in the developer supplying step, the developer stored in the developer supplying source 16 is fed to the developer supplying nozzle 11 , and the fed developer is used in the developing step. Thereafter, in the rear face cleaning step, the developer stored in the developer supplying source 16 is fed to the cleaning liquid supply nozzle 13 , and the fed developer is used in the rear face cleaning step.
  • the configuration mentioned above eliminates necessity to provide an individual cleaning liquid supplying source 24 . Consequently, a simplified negative developing apparatus can be obtained.
US14/142,048 2013-01-11 2013-12-27 Negative developing method and negative developing apparatus Active US9063429B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-003641 2013-01-11
JP2013003641A JP6077311B2 (ja) 2013-01-11 2013-01-11 ネガティブ現像処理方法およびネガティブ現像処理装置

Publications (2)

Publication Number Publication Date
US20140199638A1 US20140199638A1 (en) 2014-07-17
US9063429B2 true US9063429B2 (en) 2015-06-23

Family

ID=51165402

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/142,048 Active US9063429B2 (en) 2013-01-11 2013-12-27 Negative developing method and negative developing apparatus

Country Status (4)

Country Link
US (1) US9063429B2 (ja)
JP (1) JP6077311B2 (ja)
KR (1) KR101935073B1 (ja)
TW (1) TWI588624B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6482919B2 (ja) 2015-03-23 2019-03-13 株式会社Ｓｃｒｅｅｎホールディングス ネガティブ現像処理方法およびネガティブ現像処理装置
WO2017187951A1 (ja) * 2016-04-28 2017-11-02 東京エレクトロン株式会社 現像方法、現像装置及び記憶媒体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020170574A1 (en) * 2001-05-21 2002-11-21 Speedfam-Ipec Corporation Differential Cleaning for semiconductor wafers with copper circuitry
JP2008091751A (ja) 2006-10-04 2008-04-17 Sokudo:Kk 基板の現像処理方法および基板の現像処理装置
JP2011028281A (ja) 2010-09-03 2011-02-10 Fujifilm Corp パターン形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0419073B1 (en) * 1989-09-20 1997-07-30 Fujitsu Limited Process for production of a semiconductor device
JP5656413B2 (ja) * 2009-01-30 2015-01-21 富士フイルム株式会社 ネガ型レジストパターン形成方法、それに用いられる現像液及びネガ型化学増幅型レジスト組成物、並びにレジストパターン
JP5557550B2 (ja) * 2009-02-20 2014-07-23 富士フイルム株式会社 電子線又はｅｕｖ光を用いた有機溶剤系現像又は多重現像パターン形成方法
JP2010287686A (ja) * 2009-06-10 2010-12-24 Tokyo Electron Ltd 塗布、現像装置及び基板の裏面洗浄方法。
JP5358369B2 (ja) * 2009-09-18 2013-12-04 富士フイルム株式会社 レジストパターン形成方法及びそれに用いられる現像液
JP5494079B2 (ja) * 2010-03-19 2014-05-14 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5397399B2 (ja) * 2010-07-09 2014-01-22 東京エレクトロン株式会社 塗布、現像装置
JP5408059B2 (ja) * 2010-07-09 2014-02-05 東京エレクトロン株式会社 塗布、現像装置、塗布、現像方法及び記憶媒体
EP2492753A2 (en) * 2011-02-28 2012-08-29 Rohm and Haas Electronic Materials LLC Developer compositions and methods of forming photolithographic patterns
JP5952029B2 (ja) * 2011-02-28 2016-07-13 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物、およびフォトリソグラフィパターンを形成する方法
JP5785121B2 (ja) * 2011-04-28 2015-09-24 信越化学工業株式会社 パターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020170574A1 (en) * 2001-05-21 2002-11-21 Speedfam-Ipec Corporation Differential Cleaning for semiconductor wafers with copper circuitry
JP2008091751A (ja) 2006-10-04 2008-04-17 Sokudo:Kk 基板の現像処理方法および基板の現像処理装置
US20080090185A1 (en) 2006-10-04 2008-04-17 Sokudo Co., Ltd. Method and apparatus for rinsing a substrate during lithographic development processing
JP2011028281A (ja) 2010-09-03 2011-02-10 Fujifilm Corp パターン形成方法

Also Published As

Publication number Publication date
JP2014135440A (ja) 2014-07-24
TW201432394A (zh) 2014-08-16
KR101935073B1 (ko) 2019-01-03
US20140199638A1 (en) 2014-07-17
TWI588624B (zh) 2017-06-21
KR20140091658A (ko) 2014-07-22
JP6077311B2 (ja) 2017-02-08

Similar Documents

Publication Publication Date Title
JPH10303106A (ja) 現像処理装置およびその処理方法
JP4582654B2 (ja) ノズル洗浄装置、ノズル洗浄方法、ノズル洗浄プログラム、及びそのプログラムを記録したコンピュータ読み取り可能な記録媒体
US11150558B2 (en) Developing method
US10144033B2 (en) Substrate processing apparatus and substrate processing method
KR20160039547A (ko) 액 처리 방법, 기억 매체 및 액 처리 장치
TWI669751B (zh) 基板處理裝置及基板處理方法
JP5098964B2 (ja) ウエハの洗浄方法及び記憶媒体
US9063429B2 (en) Negative developing method and negative developing apparatus
KR101950047B1 (ko) 기판 세정 건조 방법 및 기판 현상 방법
JP2008060104A (ja) 基板処理方法および基板処理装置
KR100757882B1 (ko) 기판의 감광막 제거 방법
US10042262B2 (en) Negative developing method and negative developing apparatus
JP5683259B2 (ja) 基板処理装置及び基板処理方法
JP3453022B2 (ja) 現像装置
JP2008186983A (ja) 現像装置および現像ノズルの洗浄方法
TWI566311B (zh) 半導體機台與其操作方法
TW202322205A (zh) 半導體晶圓清洗方法及其裝置
KR20070067412A (ko) 반도체 제조용 현상장치 및 현상 방법
KR20070036864A (ko) 노즐 세정 장치
KR20060077570A (ko) 웨이퍼 이면 세정 노즐
KR20090102068A (ko) 동적 현상 방법
KR20050068485A (ko) 반도체 현상공정의 현상액 분사방법
KR20070069973A (ko) 스핀코터의 배기시스템

Legal Events

Date Code Title Description
AS Assignment

Owner name: SOKUDO CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MIYAGI, TADASHI;MITSUHASHI, TSUYOSHI;WAJIKI, TAKEHIRO;SIGNING DATES FROM 20131101 TO 20131217;REEL/FRAME:031853/0957

AS Assignment

Owner name: SCREEN SEMICONDUCTOR SOLUTIONS CO., LTD., JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SOKUDO CO., LTD.;REEL/FRAME:033845/0470

Effective date: 20140805

STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8