US9029901B2 - Electronic component - Google Patents

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Publication number
US9029901B2
US9029901B2 US13/825,525 US201113825525A US9029901B2 US 9029901 B2 US9029901 B2 US 9029901B2 US 201113825525 A US201113825525 A US 201113825525A US 9029901 B2 US9029901 B2 US 9029901B2
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Prior art keywords
glass transition
transition temperature
semiconductor chip
electronic component
cover element
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US13/825,525
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US20130256737A1 (en
Inventor
Johann Ramchen
Christina Keith
Bert Braune
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Osram Oled GmbH
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Osram Opto Semiconductors GmbH
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Assigned to OSRAM OPTO SEMICONDUCTORS GMBH reassignment OSRAM OPTO SEMICONDUCTORS GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BRAUNE, BERT, KEITH, CHRISTINA, RAMCHEN, JOHANN
Publication of US20130256737A1 publication Critical patent/US20130256737A1/en
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Assigned to OSRAM OLED GMBH reassignment OSRAM OLED GMBH ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: OSRAM OPTO SEMICONDUCTORS GMBH
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Definitions

  • An electronic component is specified.
  • a semiconductor component such as, for instance, a light-emitting diode (LED)
  • a carrier such as, for instance, a printed circuit board by means of a soldering process
  • the LED and its component parts are subjected to thermomechanical stresses as a result of the heating required for soldering and the subsequent cooling.
  • the LED has, for example, a housing comprising a plurality of different plastic parts in which a semiconductor chip is arranged, then the thermomechanical stresses in the housing can act on the semiconductor chip in such a way that the latter is detached or lifted off of a mounting area. This can lead to failure of the LED.
  • thermomechanical stresses are even additionally intensified, as a result of which the probability of failure also increases for such components.
  • an electronic component comprises a housing body having a depression.
  • a semiconductor chip is arranged in the depression.
  • the housing body can be pre-molded, in particular. That means that, prior to the mounting of the semiconductor chip, the housing body is shaped from a suitable material, for example, a thermoplastic, by means of a molding process such as, for instance, injection molding, transfer molding, or compression molding.
  • the thermoplastic can comprise, for example, polyphthalamide (PPA) or some other suitable plastic material.
  • the component can comprise a leadframe embedded into the housing body.
  • the material of the housing body can be molded around the leadframe and the latter can provide a mounting region for the semiconductor chip.
  • the leadframe can provide contact regions outside the housing body for the electronic component, by means of which contact regions the electronic component can be fixed and electrically connected on a carrier, for example, a printed circuit board, by means of a soldering process.
  • the semiconductor chip can be arranged and thus mounted on the leadframe by means of a connecting material.
  • the connecting material can comprise or be, for example, an electrically conductive adhesive, which can also be designated as a so-called chip adhesive.
  • the connecting material can also comprise or be a solder.
  • the semiconductor chip it may be necessary for the semiconductor chip to be permanently fixed to the leadframe and electrically connected thereto by means of the connecting material.
  • the electronic component can be surface-mountable. That can mean, in particular, that the leadframe is embodied in such a way that it provides surface-mountable contact regions on an outer side of the housing body.
  • the semiconductor chip is an optoelectronic semiconductor chip.
  • the semiconductor chip can be embodied, in particular, as a light-emitting or as a light-receiving semiconductor chip.
  • the semiconductor chip can be embodied, for example, as an epitaxial layer sequence, that is to say as an epitaxially grown semiconductor layer sequence, based on an arsenide, phosphide or nitride compound semiconductor material system.
  • the semiconductor chip can, for example, also be embodied as a transistor or as an integrated circuit or as a combination of the semiconductor chips mentioned.
  • a potting composed of a first plastic material is arranged in the depression of the housing body, the semiconductor chip being embedded into said potting. That can mean, in particular, that the potting directly adjoins the semiconductor chip, for example, at all surface regions at which the connecting material is not arranged. As a result, the semiconductor chip is in direct contact with the potting. Thermomechanical stresses which can occur in the potting can thus act directly on the semiconductor chip.
  • the semiconductor chip is embodied, for example, as an optoelectronic semiconductor chip and, in particular, as a light-emitting semiconductor chip
  • the plastic material of the potting can be embodied as transparent.
  • the potting can, for example, also comprise a wavelength conversion substance and/or scattering particles embedded into the first plastic material.
  • a cover element composed of a second plastic material is arranged above the depression.
  • the cover element can be arranged on the potting in order to protect the potting and/or the semiconductor chip.
  • the cover element can also provide additional functionalities for the electronic component.
  • the semiconductor chip is embodied as an optoelectronic semiconductor chip and, in particular, as a light-emitting semiconductor chip
  • the cover element can be embodied for example as an optical element, in particular as a lens, for example.
  • the second plastic material of the cover element can advantageously be transparent, in which case it may also be possible for a wavelength conversion substance and/or scattering particles to be embedded into the second plastic material.
  • the cover element can be arranged on the potting by means of an adhesive, in particular. That can mean, in particular, that the cover element is fixed on the potting by means of the adhesive.
  • the adhesive can comprise a material identical to, or at least in the same material class as, the first plastic material of the potting or of the second plastic material of the cover element.
  • the adhesive can be an epoxy adhesive which is furthermore arranged in a thin layer between the cover element and the potting and permanently connects the potting to the cover element.
  • the adhesive can have properties identical to those of the cover element, in particular, a glass transition temperature identical to that of the cover element.
  • the adhesive can comprise a plastic material, for example, the second plastic material, having the second glass transition temperature.
  • the first plastic material has a first glass transition temperature
  • the second plastic material has a second glass transition temperature.
  • the second glass transition temperature is lower than the first glass transition temperature.
  • the glass transition temperature is the temperature at which the first and respectively the second plastic material has a significant change in its deformability. Below the glass transition temperature, the first and respectively the second plastic material can have a low deformability and a rather brittle behavior. At temperatures above the glass transition temperature, the deformability can be characterized by a rather soft, plastically deformable behavior.
  • the first and respectively the second plastic material has in each case a low modulus of elasticity, while below the glass transition temperature, the respective modulus of elasticity is high.
  • the coefficients of thermal expansion can also differ significantly above and below the glass transition temperature.
  • the first and second plastic materials in each case comprise a thermosetting plastic.
  • the first and/or the second plastic material can comprise an epoxy and/or an acrylate. It is particularly advantageous if both the first and the second plastic material in each case comprise an epoxy resin.
  • the latter can in each case have the first and second glass transition temperatures mentioned above.
  • plastic materials having the same or at least approximately the same glass transition temperature are usually used for a potting material and a cover material. If such a known electronic component is soldered on, then the individual elements of such a component experience significant temperature differences at least during the cooling process after soldering. While the temperature of the environment is reached very rapidly on the surface of the component, the internal component parts of such a component, that is to say, for example, the potting and the semiconductor chip, are still at a higher temperature.
  • plastic materials such as thermosetting plastics, for example, incur severe shrinkage above the glass transition temperature during the cooling process, while they have a significantly smaller temperature-dependent change in expansion below the glass transition temperature, and since, as described above, the moduli of elasticity differ significantly above and below the glass transition temperature, during cooling it can happen that the elements situated further outward, or a region thereof, that is to say, for example, a cover element and, in particular, the top side thereof, is already below the glass transition temperature and thus substantially rigid, while elements in the interior of the component such as, for instance, the potting material are still above the glass transition temperature and thus shrink to an even greater extent in the course of further cooling.
  • the shrinkage centroid of the overall system composed of cover material and potting material can shift in the direction of the cover material such that tensile stresses are built up between the potting material and the semiconductor chip and between the potting material and the housing body. These tensile stresses often exceed the adhesion forces of a connecting material used to mount the semiconductor chip in the housing body. Consequently in the case of known components in which materials having substantially identical glass transition temperatures are used, delamination of the semiconductor chip can easily occur.
  • the point in time at which the cover element solidifies can be delayed such that the cover element remains in an elastic and deformable state for longer during a cooling process. Shrinkages which take place in the potting as a result of the delayed cooling can thus be compensated for by the cover element for longer. As a result, thermoelastic stresses that can disadvantageously act on the semiconductor chip can advantageously be reduced.
  • the first and second glass transition temperatures can be set in such a way that during a customary soldering and cooling process, the solidification of the cover element and of the potting takes place substantially simultaneously.
  • the first glass transition temperature is greater than or equal to 120° C. Furthermore, the first glass transition temperature can be less than or equal to 150° C. That can mean, in particular, that the first glass transition temperature is in a range of between 120° C. and 150° C., wherein the limits can be concomitantly included.
  • the second glass transition temperature is lower than the first glass transition temperature and is, in particular, less than or equal to 120° C. or else less than 120° C. Particularly preferably, the second glass transition temperature can be less than or equal to 110° C. Furthermore, the second glass transition temperature can be greater than or equal to 80° C. That can mean that the second glass transition temperature is in a range of between 80° C. and 120° C. and preferably between 80° C. and 110° C., wherein the limits can be concomitantly included.
  • thermomechanical behavior during the soldering process in particular, for surface-mountable electronic components
  • FIGS. 1 to 3 show schematic illustrations of electronic components in accordance with different exemplary embodiments.
  • FIG. 4 shows a schematic illustration of a cooling process after a soldering process of an electronic component in accordance with a further exemplary embodiment.
  • identical or identically acting constituent parts may, in each case, be provided with the same reference signs.
  • the illustrated elements and their size relationships among one another should not be regarded as true to scale, in principle; rather, individual elements such as, for example, layers, structural parts, components and regions may be illustrated with exaggerated thickness or size dimensions in order to enable better illustration and/or in order to afford a better understanding.
  • FIG. 1 shows an exemplary embodiment of an electronic component comprising a housing body 1 .
  • the housing body 1 has a depression 10 , in which a semiconductor chip 3 is arranged.
  • the electronic component shown in each case is embodied as an optoelectronic component comprising an optoelectronic semiconductor chip and, in particular, a light-emitting semiconductor chip.
  • the housing body 1 comprises a thermoplastic, for example, polyphthalamide (PPA), and is shaped by means of a molding process, for example, injection molding.
  • a leadframe 2 is provided, around which the material of the housing body 1 is molded.
  • the housing body 1 and the leadframe 2 are embodied in such a way that, as shown in FIG. 1 , the electronic component is surface-mountable.
  • the semiconductor chip 3 is fixed on the leadframe 2 and thus on the housing body 1 in the depression 10 by means of a connecting material 4 , preferably by means of an electrically conductive adhesive in the exemplary embodiment shown.
  • a top side of the semiconductor chip 3 is electrically connected to the leadframe 2 by means of a bonding wire 5 , for example, a gold wire.
  • the housing body 1 , the leadframe 2 and the semiconductor chip 3 can also have other materials, geometries, arrangements and embodiments.
  • a potting 6 composed of a first plastic material is arranged in the depression 10 of the housing body 1 , a semiconductor chip 3 being embedded in said potting.
  • the potting 6 in this case completely fills the depression 10 .
  • the potting 6 may also be possible that the potting 6 only partly fills the depression 10 . In other words, the potting 6 does not extend as far the upper edge of the depression 10 .
  • a cover element 8 composed of a second plastic material is arranged above the depression 10 .
  • the cover element 8 is embodied as a lens which is pre-molded and prefabricated prior to being applied to the potting 6 and which is arranged on the potting and fixed thereto by means of an adhesive 7 .
  • the potting 6 is also cured before the cover element 8 is applied.
  • the first plastic material of the potting 6 and the second plastic material of the cover element 8 are in each case produced from a transparent thermosetting plastic, in particular, in each case from an epoxy resin in the exemplary embodiment shown.
  • the first plastic material has a first glass transition temperature which is in a range of between 120° C. and 150° C.
  • the second plastic material has a second glass transition temperature which is lower than the first glass transition temperature.
  • the second glass transition temperature is in a range of between 80° C. and 110° C.
  • the different glass transition temperatures of the first and second plastic materials can be achieved by means of additives to the respective epoxy resin and/or by means of different degrees of crosslinking of the materials during the respective curing.
  • the adhesive 7 has properties identical to those of the cover element 8 , in particular, a glass transition temperature identical to that of the cover element 8 .
  • the second plastic material of the cover element 8 can be applied as adhesive 7 .
  • FIGS. 2 and 3 show further exemplary embodiments of electronic components which, in comparison with the exemplary embodiment in accordance with FIG. 1 , have a depression 10 shaped as a reflector in the housing body 1 .
  • an increase in the emission of the light emitted in the semiconductor chip 3 in a forward direction can be made possible.
  • the housing body of the electronic component in accordance with the exemplary embodiment in FIG. 3 is furthermore embodied in such a way that the depression 10 , in particular, the bottom surface of the depression 10 apart from mounting and connection regions for the semiconductor chip 3 and the bonding wire 5 , are covered by the housing body material such that the reflectivity of the depression 10 shaped as a reflector is increased even further.
  • FIG. 4 shows, purely by way of example, the electronic component in accordance with the exemplary embodiment from FIG. 3 which is soldered on a circuit board or a printed circuit board 9 by means of, purely by way of example, a customary soldering process.
  • the component and the printed circuit board 9 are heated to a maximum temperature (peak temperature) of usually greater than or equal to 240° C. and less than or equal to 270° C. and typically of 260° C., at which a solder arranged between the printed circuit board 9 and the leadframe 2 of the electronic component melts and thus, enables the component to be mounded and fixed on the printed circuit board 9 .
  • the component is subsequently cooled to 165° C.
  • the component is cooled directly to room temperature at a cooling rate of usually six kelvins per seconds.
  • cooling air is blown onto the component on the printed circuit board 9 from the top side and underside, as is indicated by means of the arrows 90 .
  • the individual elements of the electronic component experience significant temperature differences. While the temperature of the cooling air is reached very rapidly on the surface of the component in the region marked by 91 on account of the active cooling, the internal component parts, for instance in the region 93 , such as, for instance, the potting 6 but also the semiconductor chip 3 and the connecting material 4 , are still at a higher temperature. During cooling, however, the plastic materials in each case experience shrinkage.
  • the first and second plastic materials which comprise an epoxy resin in the exemplary embodiment shown, in each case experience severe shrinkage above the glass transition temperature, while below the glass transition temperature, the temperature-dictated expansion of the respective material is lower by orders of magnitude. Furthermore, the modulus of elasticity of the respective plastic material changes greatly during the transition of the glass transition temperature. Below the glass transition temperature, the modulus of elasticity is high, for example, greater than 1 GPa in the case of epoxy resins, which is reflected in a rigid structure of the material. Above the glass transition temperature, the epoxy resins soften and the modulus of elasticity decreases, typically to values of less than 1 MPa. Furthermore, the change in the respective coefficients of expansion cannot be disregarded during the transition or undershooting of the glass transition temperature. Epoxy resins typically have a coefficient of thermal expansion of 60 to 70 ppm/K below the glass transition temperature, while the coefficient of expansion is approximately 160 to 170 ppm/K above the glass transition temperature.
  • the respective materials that is to say the material of the housing body, of the potting and of the cover element, expand greatly relative to the state at room temperature.
  • the materials in turn, shrink in the cooling phase.
  • a situation can occur in which the cover element is already at a temperature below its glass transition temperature, while the potting material is still above the glass transition temperature.
  • This can have the effect that the surface of the cover element has already solidified and has a high modulus of elasticity, while the interior of the cover element and the potting material are still above the glass transition temperature. That means that the surface of the cover element has already solidified at a point in time at which the cover element still has a higher volume relative to its state at room temperature.
  • Said tensile stress often exceeds the adhesion forces of the potting at the leadframe such that a delamination of the potting material can be observed here. If the tensile forces are higher than the adhesion forces between the semiconductor chip and the chip adhesive or the chip adhesive and the leadframe, this leads to the delamination of the semiconductor chip from the leadframe, thus giving rise to an open electrical contact in the component, which leads to the failure of the component.
  • a first glass transition temperature of the potting 6 of approximately 130° C. and a second glass transition temperature of the cover element 8 of approximately 100° C. are assumed purely by way of example below.
  • the temperature in the region 91 is higher than 100° C.
  • the surface of the cover element 8 has not yet solidified. It is only when the temperature in the region 91 falls below the second glass transition temperature of 100° C. that the surface of the cover element 8 has solidified.
  • the second plastic material of the cover element 8 still shrinks in this region.
  • the potting 6 that is to say the first plastic material, has already solidified on account of the first transition temperature of 130° C. If it is assumed, for example, that a temperature of 120° C. prevails both in the region 92 and in the region 93 , the potting 6 has already solidified, while the cover element 8 is still above the second glass transition temperature. Even if the cover element 8 shrinks still further in the region 92 , the forces which act on the semiconductor chip 3 or on the respective interfaces between the potting 6 , the semiconductor chip 3 , the connecting material 4 , the leadframe 2 and the housing material 1 can thus be considerably reduced. As a result, it is possible to counteract the thermal imbalance during cooling after a soldering process and thus, to avoid the delamination of the semiconductor chip 3 .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
US13/825,525 2010-09-21 2011-08-19 Electronic component Active US9029901B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102010046122A DE102010046122A1 (de) 2010-09-21 2010-09-21 Elektronisches Bauelement
DE102010046122.9 2010-09-21
DE102010046122 2010-09-21
PCT/EP2011/064296 WO2012038164A1 (de) 2010-09-21 2011-08-19 Elektronisches bauelement

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US20130256737A1 US20130256737A1 (en) 2013-10-03
US9029901B2 true US9029901B2 (en) 2015-05-12

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US (1) US9029901B2 (zh)
EP (1) EP2619810B1 (zh)
JP (1) JP5650330B2 (zh)
KR (1) KR101555605B1 (zh)
CN (1) CN103119737B (zh)
DE (1) DE102010046122A1 (zh)
WO (1) WO2012038164A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140225149A1 (en) * 2011-09-30 2014-08-14 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Component and Method for Fabricating an Optoelectronic Semiconductor Component

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130096094A (ko) * 2012-02-21 2013-08-29 엘지이노텍 주식회사 발광소자 패키지, 발광 소자 패키지 제조방법 및 이를 구비한 조명 시스템
WO2020090610A1 (ja) * 2018-10-29 2020-05-07 三菱マテリアル株式会社 パッケージ用蓋材の製造方法およびパッケージの製造方法

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WO2012038164A1 (de) 2012-03-29
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