US8169428B2 - Display substrate, method of manufacturing the same and display device having the same - Google Patents

Display substrate, method of manufacturing the same and display device having the same Download PDF

Info

Publication number
US8169428B2
US8169428B2 US11/474,112 US47411206A US8169428B2 US 8169428 B2 US8169428 B2 US 8169428B2 US 47411206 A US47411206 A US 47411206A US 8169428 B2 US8169428 B2 US 8169428B2
Authority
US
United States
Prior art keywords
silver
molybdenum alloy
electrode
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US11/474,112
Other languages
English (en)
Other versions
US20070081106A1 (en
Inventor
Sung-Hwan Cho
Ho-Nam Yum
Dae-ho Choo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHO, SUNG-HWAN, CHOO, DAE-HO, YUM, HO-NAM
Publication of US20070081106A1 publication Critical patent/US20070081106A1/en
Application granted granted Critical
Publication of US8169428B2 publication Critical patent/US8169428B2/en
Assigned to SAMSUNG DISPLAY CO., LTD. reassignment SAMSUNG DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SAMSUNG ELECTRONICS CO., LTD.
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit

Definitions

  • the present invention relates to a display substrate, a method of manufacturing the display substrate and a display device having the display substrate. More particularly, the present invention relates to a display substrate capable of improving display quality of an image, a method of manufacturing the display substrate and a display device having the display substrate.
  • a display device converts information processed from an information processing device to an image.
  • Examples of the display devices include a cathode ray tube (CRT) type display device, a liquid crystal display (LCD) device, an organic light emitting display (OLED) device, etc.
  • CTR cathode ray tube
  • LCD liquid crystal display
  • OLED organic light emitting display
  • Liquid crystal display (LCD) devices are classified into three types, a transmissive type LCD device, a reflective type LCD device, and a reflective-transmissive type LCD device, depending upon the method of using light.
  • the transmissive type LCD device displays an image using light provided from an internal lamp installed within the LCD device.
  • the reflective type LCD device displays an image using light externally provided (e.g., from the sun, a lamp, or other illuminating device).
  • the reflective-transmissive type LCD device displays an image using light internally provided from a lamp installed in the LCD device and/or externally provided.
  • the transmissive type LCD device includes a transparent electrode that is transparent and conductive, while the reflective type LCD device includes a reflective electrode that has a greater reflectivity than a transparent electrode.
  • the reflective-transmissive type LCD device includes both a transparent electrode and a reflective electrode.
  • the reflective electrode of the reflective type LCD device or the reflective-transmissive type LCD device includes aluminum or aluminum alloy having a high reflectivity (e.g., reflective electrodes made of aluminum or of aluminum alloy), hillocks may be formed on the surface of the reflective electrode (e.g., during a curing process for an alignment layer formed on the reflective electrode), and galvanic corrosion may occur between the reflective electrode and the transparent electrode.
  • aluminum or aluminum alloy having a high reflectivity e.g., reflective electrodes made of aluminum or of aluminum alloy
  • hillocks may be formed on the surface of the reflective electrode (e.g., during a curing process for an alignment layer formed on the reflective electrode), and galvanic corrosion may occur between the reflective electrode and the transparent electrode.
  • Aluminum films are remarkably good for fabricating electrodes and lines because of their low resistivity, low cost, high adhesion, and superior patternability.
  • the thermal expansion mismatch between Al films and a substrate or layer of display panels produces a large compressive stress in the Al films upon heating, and results in the formation of hillocks (or whiskers) in order to relieve the stress.
  • a corrosion-proof layer may be formed between the reflective electrode and the transparent electrode.
  • formation of the corrosion-proof layer requires a great increase in the number of manufacturing steps in a manufacturing process, which increases manufacturing costs.
  • An aspect of present invention provides a display substrate having a silver-molybdenum alloy electrode and capable of improved image display quality.
  • An aspect of the present invention provides a method of manufacturing the display substrate.
  • Another aspect of the present invention provides a display device having the display substrate.
  • a display substrate includes a silver-molybdenum alloy electrode (e.g., per each pixel).
  • the display substrate may include a signal-applying module (e.g., a thin-film transistor, TFT), a patterned insulation layer and a silver-molybdenum alloy electrode.
  • the signal-applying module is disposed on a substrate and includes an output terminal (e.g., a TFT transistor-drain terminal) configured to output a data signal.
  • the patterned insulation layer has a contact hole that exposes the output terminal.
  • the silver-molybdenum alloy electrode is electrically connected to the output terminal and has silver and molybdenum.
  • a signal-applying module including an output terminal configured to output a data signal is formed on a substrate (e.g., for each pixel); a contact hole that exposes a portion of the output terminal is formed through an insulation layer covering the signal-applying module to form a patterned insulation layer; and a silver-molybdenum alloy layer electrically connected to the output terminal is formed on the patterned insulation layer.
  • the silver-molybdenum alloy layer is patterned to form a silver-molybdenum alloy electrode (e.g., at each pixel of the display).
  • a display device in still another aspect of the present invention, includes a first display substrate (including a silver-molybdenum alloy electrode), and may further include a second display substrate and a liquid crystal layer.
  • the first display substrate includes a signal-applying module (e.g., a TFT transistor) for each pixel on the first substrate (the signal-applying module including an output terminal configured to output a data signal), a patterned insulation layer having a contact hole that exposes the output terminal, and a silver-molybdenum alloy electrode (made of silver and molybdenum) electrically connected to the output terminal.
  • the second display substrate includes a common electrode that is disposed on a second substrate facing the first substrate. The common electrode faces the silver-molybdenum alloy electrode.
  • the liquid crystal layer is disposed between the first and second display substrates.
  • FIG. 1 is a plan view of one pixel region of a display substrate according to an exemplary embodiment of the present invention
  • FIG. 2 is a cross-sectional view taken along section line I-I′ in FIG. 1 ;
  • FIG. 3 is a cross-sectional view of a pixel region of a display substrate according to another exemplary embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a display substrate for illustrating a method of manufacturing according to an exemplary embodiment of the present invention
  • FIG. 5 is an equivalent circuit diagram illustrating the transistor (TFT) formed in the exemplary signal-applying module 120 illustrated in FIGS. 1 , 2 , 3 and 4 ;
  • FIG. 6 is a cross-sectional view illustrating a patterned insulation layer formed on the substrate 105 in FIG. 4 ;
  • FIG. 7 is a cross-sectional view illustrating a silver-molybdenum alloy electrode formed on the patterned insulation layer illustrated in FIG. 6 ;
  • FIG. 8 is a plan view of a test plate for adhesion testing a silver-molybdenum alloy layer according to an exemplary embodiment of the present invention.
  • FIG. 9 is a cross-sectional view of a portion of the test plate of FIG. 8 under test, for illustrating a method of performing the adhesion test in FIG. 8 ;
  • FIG. 10 is a graph showing color coordinates of a silver-molybdenum alloy layer before (diamond) annealing and after (triangle) annealing according to an exemplary embodiment of the present invention
  • FIG. 11 shows four scanning electron microscope (SEM) pictures showing a pure silver layer and a silver-molybdenum alloy layer before and after annealing, according to an exemplary embodiment of the present invention
  • FIGS. 12A , 12 B, 12 C and 12 D are SEM pictures showing etching characteristics of a silver-molybdenum alloy layer
  • FIG. 13 is an SEM picture illustrating a step coverage of the silver-molybdenum alloy layer
  • FIG. 14 is a cross-sectional view of a first substrate illustrating an alignment layer formed on a patterned insulation layer according to an exemplary embodiment of the present invention
  • FIG. 15 is a cross-sectional view of a first substrate illustrating a method of manufacturing a display substrate according to another exemplary embodiment of the present invention.
  • FIG. 16 is a cross-sectional view of an assembled display device (comprising first display substrate, second display substrate, and a liquid crystal layer) according to an exemplary embodiment of the present invention.
  • FIG. 1 is a plan view of a display substrate according to an exemplary embodiment of the present invention.
  • FIG. 2 is a cross-sectional view taken along section line I-I′ in FIG. 1 .
  • a display substrate 100 includes a substrate 105 , a signal-applying module 120 having an output terminal 110 , a patterned insulation layer 130 and a silver-molybdenum alloy electrode 140 .
  • the substrate 105 may be formed of a transparent substrate material such as a glass or other substrate material capable of passing light.
  • the signal-applying module 120 is disposed on the substrate 105 .
  • the signal-applying module 120 outputs image data that is externally provided.
  • the signal-applying module 120 includes a gate line GL having a gate electrode GE, a gate insulation layer GIL, a channel pattern CP, a data line DL having a source electrode SE and the output terminal 110 .
  • a plurality ( 768 ) of gate lines GL extend substantially parallel to each other in a first (horizontal) direction that is substantially perpendicular to a second (vertical) direction; a plurality (1024 ⁇ 3) of data lines DL (each data line including 768 source electrodes SE) extend substantially parallel to each other in the second (vertical) direction; and, a plurality (1024 ⁇ 3) of gate electrodes GE protrudes from each of the (768) gate lines GL on the substrate 105 , protruding in a direction that is substantially parallel with the second direction.
  • the channel pattern CP is formed as a semiconductor island upon the gate insulation layer GIL.
  • the channel pattern CP for example, is disposed on the gate insulation layer GIL in an area corresponding to the gate electrode GE.
  • the channel pattern (semiconductor island) CP includes an amorphous silicon pattern ASP and an n+amorphous silicon pattern nASP.
  • a pair of n+amorphous silicon patterns nASP are disposed on the amorphous silicon pattern ASP, and spaced apart from each other.
  • the channel pattern CP and the electrodes (gate electrode, source electrode, and output (drain) electrode) form a transistor (data switch), such as a thin-film-transistor (TFT).
  • TFT thin-film-transistor
  • the output terminal 110 is electrically connected to the other of the n+amorphous silicon patterns nASP.
  • the output terminal 110 is formed simultaneously with the data line DL.
  • the patterned insulation layer 130 is disposed on the substrate 105 , so that the signal-applying module 120 is covered by the patterned insulation layer 130 .
  • the patterned insulation layer 130 includes, for example, a photosensitive material that is sensitized to light so as to form the contact hole.
  • the patterned insulation layer 130 is patterned such that a contact hole exposing the output terminal 110 of the signal-applying module 120 .
  • a plurality of textured patterns 135 is formed on the patterned insulation layer 130 .
  • the textured patterns 135 increase a reflective area of a silver-molybdenum alloy electrode 140 that will be described later, and diffuses light reflected from the silver-molybdenum alloy electrode 140 .
  • the textured patterns 135 may be formed by embossing (and thus be embossed patterns) or by other methods (e.g., scribing, or etching)
  • the silver-molybdenum alloy electrode 140 is formed (e.g., conformally) on the textured patterns 135 on the patterned insulation layer 130 . A portion of the silver-molybdenum alloy electrode 140 is electrically connected (through the contact hole) to the output terminal 110 exposed by the contact hole.
  • the silver-molybdenum alloy electrode 140 may preferably be composed of about 99 percent by weight to about 95 percent by weight of silver (Ag) and about 1 percent by weight to about 5 percent by weight of molybdenum (Mo).
  • Hillocks may not be formed on the surface of the silver-molybdenum alloy electrode 140 when the alignment layer 150 is cured with a temperature of about 150° C. to about 250° C., thereby avoiding exfoliation of the silver-molybdenum alloy electrode 140 from the patterned insulation layer 130 .
  • FIG. 3 is a cross-sectional view of a pixel region of a display substrate according to another exemplary embodiment of the present invention.
  • the display substrate in FIG. 3 is substantially the same as the display substrate illustrated in FIGS. 1 and 2 except for a transparent electrode 137 and opening(s) 145 in the silver-molybdenum alloy electrode 142 . Thus, any further descriptions for substantially the same elements will be omitted.
  • a transparent electrode 137 that is transparent and conductive is formed on the patterned insulation layer 130 .
  • the transparent electrode 137 includes, for example, indium tin oxide (ITO), indium zinc oxide (IZO), amorphous indium tin oxide (a-ITO), etc.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • a-ITO amorphous indium tin oxide
  • a silver-molybdenum alloy electrode 142 is disposed on the transparent electrode 137 .
  • the silver-molybdenum alloy electrode 142 may preferably have about 99 percent by weight to about 95 percent by weight of silver (Ag) and about 1 percent by weight to about 5 percent of by weight of molybdenum (Mo).
  • a plurality of openings 145 may be formed through the silver-molybdenum alloy electrode 142 down to the transparent electrode 137 . Light may effectively pass through the openings 145 , and through the transparent electrode 137 .
  • the openings 145 may have a polygon perimeter shape when viewed from a plan view.
  • a signal-applying module 120 is formed on a substrate 105 .
  • a gate metal (not shown) is formed on the substrate 105 (e.g., through a chemical vapor deposition (CVD) process or a sputtering process).
  • the gate metal is patterned (e.g., by a photolithography process) to form a gate line GL (and a gate electrode GE protruding from the gate line GL) on the substrate 105 .
  • the gate insulation layer GIL is formed on the substrate 105 (e.g., through a CVD process).
  • the gate insulation layer GIL may include a transparent silicon nitride layer.
  • n+amorphous silicon layer (not shown), an amorphous silicon layer (not shown) and a source/drain layer (not shown) are successively formed on the gate insulation layer GIL.
  • the source/drain layer is patterned (e.g., through a photolithography process) to form a data line DL having a source electrode SE and an output terminal 110 spaced apart from the source electrode SE on the n+amorphous silicon layer.
  • n+amorphous silicon layer and the amorphous silicon layer are patterned using a mask of the data line DL and the output terminal 110 to form an n+amorphous silicon pattern nASP and an amorphous silicon pattern ASP on the gate insulation layer GIL.
  • a thick insulation layer (not shown) is formed on the substrate 105 .
  • the insulation layer includes, for example, an organic layer having photosensitive material.
  • the insulation layer formed on the substrate 105 is patterned (e.g., by light passing through a predetermined mask) to form a patterned insulation layer 130 .
  • Textured patterns 135 are formed on (in) the patterned insulation layer 130 , and a contact hole CT exposing a portion of the output terminal 110 of the signal-applying module 120 is formed through the patterned insulation layer 130 .
  • FIG. 7 is a cross-sectional view illustrating a silver-molybdenum alloy electrode formed on the patterned insulation layer 130 patterned insulation layer shown in FIG. 6 .
  • a silver-molybdenum alloy layer (not shown) is formed on substantially the entire surface of the patterned insulation layer 130 , including in the contact holes CT. Thus, a portion of the silver-molybdenum alloy layer is electrically connected to the output terminal 110 that is exposed by the contact hole CT formed through the patterned insulation layer 130 .
  • the silver-molybdenum alloy is formed, for example, through a CVD process or a sputtering process.
  • the silver-molybdenum alloy layer may preferably have about 99 percent by weight to about 95 percent by weight of silver (Ag) and about 1 percent by weight to about 5 percent by weight of molybdenum (Mo).
  • the silver-molybdenum alloy layer may be patterned by a photolithography process to form a silver-molybdenum alloy electrode 140 on the patterned insulation layer 130 .
  • a portion of the silver-molybdenum alloy electrode 140 formed by patterning the silver-molybdenum alloy layer is electrically connected to the output terminal 110 .
  • textured patterns were formed on an organic layer, and then the silver-molybdenum alloy electrode and the pure aluminum electrode were formed on the textured patterns.
  • Table 1 below shows measurements of optical reflectivities, color coordinates and adhesivities of the silver-molybdenum alloy electrode and the pure aluminum electrode. Table 1 indicates optical reflectivity of light that was reflected from each of the silver-molybdenum alloy electrode and the pure aluminum electrode, formed on the textured patterns.
  • the silver-molybdenum alloy electrode had a reflectivity 20% greater than that of the pure aluminum electrode, while an adhesivity of the silver-molybdenum alloy electrode to the organic layer was substantially the same as an adhesivity of the pure aluminum electrode to the organic layer.
  • FIG. 8 is a plan view of a test plate for adhesion testing a silver-molybdenum alloy layer formed according to an exemplary embodiment of the present invention.
  • FIG. 9 is a cross-sectional view of a portion of the test plate of FIG. 8 under test, for illustrating a method of performing the adhesion test in FIG. 8 .
  • a test plate 200 includes a base film 210 ( FIG. 9 ) and a test film 220 ( FIG. 9 ) formed on the base film 210 .
  • the base film 210 includes, for example, glass, silicon oxide, indium tin oxide, polycarbonate, polyethylene terephthalate, acryl resin, polyimide, etc.
  • the test film 220 may include the silver-molybdenum alloy layer or a pure silver layer.
  • the test film 220 for an adhesion test is cut into about 1 mm ⁇ 1 mm pieces using a cutter. After the test film 220 is formed into a lattice shape, an adhesive tape 230 is adhered to the test film 220 , and then is peeled off the test film 220 .
  • Table 2 below shows results from an adhesion test.
  • symbols “ ⁇ ”, “ ⁇ ”and “X” respectively indicate “no exfoliation”, “exfoliation less than about 50%” and “exfoliation more than about 50%” (of the test film off of the base film).
  • FIG. 10 is a graph showing color coordinates of a silver-molybdenum alloy layer before and after annealing according to an exemplary embodiment of the present invention.
  • symbols “ ⁇ ” (diamond) and “ ⁇ ” (triangle) indicate color coordinates before baking and after baking, respectively.
  • FIG. 11 shows four scanning electron microscope (SEM) pictures of a pure silver layer and a silver-molybdenum alloy layer before and after annealing, according to an exemplary embodiment of the present invention.
  • FIGS. 12A , 12 B, 12 C and 12 D are SEM pictures showing etching characteristics of a silver-molybdenum alloy layer.
  • the silver-molybdenum alloy layer when the silver-molybdenum alloy layer is etched using a conventional etchant (used for etching pure silver), the silver-molybdenum alloy layer was patterned to have a substantially uniform interval D of about 4 ⁇ m, and the optimum etching time was found to be about seventeen seconds.
  • the silver-molybdenum alloy layer according to the present invention has good etching characteristics with respect to the conventional etchant.
  • FIG. 13 is an SEM picture illustrating a step coverage of the silver-molybdenum alloy layer.
  • the via hole having a thickness of about 5 ⁇ m was formed through an insulation layer. Then, an indium tin oxide layer and a silver-molybdenum alloy layer were successively deposited on the insulation layer having the via hole at thicknesses of about 70 nm and about 240 nm, respectively.
  • the silver-molybdenum alloy layer had a good step coverage as shown in FIG. 13 .
  • FIG. 14 is a cross-sectional view of a first substrate illustrating an alignment layer 150 formed on a patterned insulation layer 130 according to an exemplary embodiment of the present invention.
  • an alignment layer 150 is formed on the patterned insulation layer 130 .
  • the alignment layer 150 includes polyimide resin.
  • the alignment layer 150 may be baked at a temperature of about 150° C. to about 250° C. to prevent yellowing of the silver-molybdenum alloy layer and prevent formation of hillocks on the silver-molybdenum alloy layer.
  • FIG. 15 is a cross-sectional view of a first substrate illustrating a method of manufacturing a display substrate according to another exemplary embodiment of the present invention.
  • the method of manufacturing a display substrate in FIG. 15 is substantially the same as the method of manufacturing a display substrate illustrated in FIGS. 4 and 14 , except for a transparent electrode and an opening of in the silver-molybdenum alloy electrode.
  • substantially the same elements will be represented by the same reference numerals and the same names.
  • a transparent conductive layer (e.g., 137 ) is formed on substantially the entire surface of the patterned insulation layer 130 , and a silver-molybdenum alloy layer (e.g., 142 ) is formed on the transparent conductive layer.
  • a silver-molybdenum alloy layer (e.g., 142 ) is formed on the transparent conductive layer.
  • the transparent conductive layer may be formed on the silver-molybdenum alloy layer.
  • the transparent electrode 137 and the silver-molybdenum alloy electrode 142 are electrically connected to the output terminal 110 (of the TFT).
  • the silver-molybdenum alloy electrode 142 may have a plurality of openings 145 .
  • the openings 145 for example, have a polygon shape when viewed from a plan view.
  • FIG. 16 is a cross-sectional view illustrating an assembled display device (comprising first display substrate, second display substrate, and a liquid crystal layer) according to an exemplary embodiment of the present invention.
  • a display device 800 includes a first display substrate 500 , a second display substrate 600 and a liquid crystal layer 700 .
  • the first display substrate 500 includes a first substrate 505 , a signal-applying module 520 having an output terminal 510 , a patterned insulation layer 530 and a silver-molybdenum alloy electrode 540 .
  • the first substrate 505 includes a transparent substrate such as a glass substrate capable of passing light.
  • the signal-applying module 520 (of each pixel) is disposed on the first substrate 505 .
  • the signal-applying module 520 (of each pixel) outputs image data externally provided while the display is in use.
  • the signal-applying module 520 includes a gate line (not shown) having a gate electrode GE, a gate insulation layer GIL, a channel pattern CP, a data line (not shown) having a source electrode SE and the output (drain) terminal 510 .
  • the gate line extends, for example, in a first (e.g., horizontal) direction.
  • a plurality of 768 gate lines are substantially parallelly distributed in a second direction that is substantially perpendicular to the first direction.
  • a plurality of 1024 ⁇ 3 gate electrodes GE protrudes from each gate line on the first substrate 505 .
  • the gate insulation layer GIL covers the gate line having the gate electrode GE to insulate the gate line from the data lines having the source electrode SE.
  • the gate insulation layer GIL may include a transparent silicon nitride layer.
  • the channel pattern CP (semiconductor island) is formed on the gate insulation layer GIL.
  • the channel pattern CP for example, is disposed on the gate insulation layer GIL corresponding to the gate electrode GE.
  • the channel pattern CP includes an amorphous silicon pattern ASP and an n+amorphous silicon pattern nASP. A pair of n+amorphous silicon patterns nASP are disposed on the amorphous silicon pattern ASP, and spaced apart from each other.
  • the data lines are disposed on the gate insulation layer GIL. Each of the data lines extends in the second (vertical) direction that is substantially perpendicular to the first direction.
  • the first display substrate 500 has a resolution of 1024 ⁇ 768: there a plurality of 1024 ⁇ 3 data lines distributed in the first direction; a plurality of 768 source electrodes SE h protrudes from each data line on the first substrate 505 .
  • Each source electrode SE is electrically connected to one of the n+amorphous silicon patterns nASP.
  • the output terminal 510 is electrically connected to the other of the n+amorphous silicon patterns nASP.
  • the output terminal 510 is formed simultaneously with the data line.
  • the patterned insulation layer 530 is disposed on the first substrate 505 , so that the signal-applying module 520 is covered with the patterned insulation layer 530 .
  • the patterned insulation layer 530 includes a contact hole exposing the output terminal 510 of the signal-applying module 520 .
  • the patterned insulation layer 530 includes, for example, a photosensitive material that is sensitized to light so as to facilitate formation of the contact hole.
  • a plurality of textured (e.g., embossed) patterns 535 is formed on the patterned insulation layer 530 .
  • the textured patterns 535 increase a reflective area of a silver-molybdenum alloy electrode 540 that will be described later, and diffuses light reflected from the silver-molybdenum alloy electrode 540 .
  • the silver-molybdenum alloy electrode 540 is formed on the textured patterns 535 on the patterned insulation layer 530 . A portion of the silver-molybdenum alloy electrode 540 is electrically connected to the output terminal 510 exposed by the contact hole.
  • the silver-molybdenum alloy electrode 540 may preferably have about 99 percent by weight to about 95 percent by weight of silver (Ag) and about 1 percent by weight to about 5 percent by weight of molybdenum (Mo).
  • An alignment layer 550 is formed on the silver-molybdenum alloy electrode 540 .
  • the alignment layer 550 includes, for example, polyimide resin. Alignment grooves are formed on the alignment layer 550 to align liquid crystal molecules of the liquid crystal layer 700 .
  • the alignment layer 550 including polyimide resin is cured at a temperature of about 150° C. to about 250° C.
  • Hillocks may not be formed on the silver-molybdenum alloy electrode 540 when the alignment layer 550 is cured at the above temperature of about 150° C. to about 250° C., thereby preventing exfoliation of the silver-molybdenum alloy electrode 540 from the patterned insulation layer 530 .
  • the second display substrate 600 includes a second substrate 605 , a color filter 610 , (for example, formed on the second substrate 605 ), a common electrode 620 formed on the color filter 610 and a second alignment layer 630 .
  • the color filter 610 is positioned to correspond to the silver-molybdenum alloy electrode 540 of the first display substrate 500 .
  • the color filter 610 includes, for example, a red color filter for passing red light of white light, a green color filter for passing green light of white light, and a blue color filter for passing blue light of white light.
  • the common electrode 620 is formed on the color filter 610 .
  • the common electrode 620 may include a transparent conductive material such as indium tin oxide, indium zinc oxide, amorphous indium tin oxide, etc.
  • the common electrode 620 faces the silver-molybdenum alloy electrode 540 of the first display substrate 500 .
  • the second alignment layer 630 is positioned to face the first alignment layer 550 . Alignment grooves are formed on the second alignment layer 630 to align liquid crystal molecules of the liquid crystal layer 700 .
  • the liquid crystal layer 700 is disposed between the first display substrate 500 and the second display substrate 600 .
  • an electrode of a display device includes silver-molybdenum alloy, thereby improving display quality of an image displayed by the display device.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
US11/474,112 2005-06-23 2006-06-23 Display substrate, method of manufacturing the same and display device having the same Active 2029-06-21 US8169428B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2005-0054302 2005-06-23
KR1020050054302A KR20060134540A (ko) 2005-06-23 2005-06-23 표시기판, 이의 제조 방법 및 이를 갖는 표시장치
KR2005-54302 2005-06-23

Publications (2)

Publication Number Publication Date
US20070081106A1 US20070081106A1 (en) 2007-04-12
US8169428B2 true US8169428B2 (en) 2012-05-01

Family

ID=37583348

Family Applications (1)

Application Number Title Priority Date Filing Date
US11/474,112 Active 2029-06-21 US8169428B2 (en) 2005-06-23 2006-06-23 Display substrate, method of manufacturing the same and display device having the same

Country Status (4)

Country Link
US (1) US8169428B2 (ko)
JP (1) JP2007004166A (ko)
KR (1) KR20060134540A (ko)
CN (1) CN1885114A (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100742376B1 (ko) * 2005-09-30 2007-07-24 삼성에스디아이 주식회사 패드부 및 그 제조 방법
CN102317995B (zh) * 2009-03-18 2015-05-20 联合创新技术有限公司 有源矩阵基板和显示装置
US9694562B2 (en) * 2010-03-12 2017-07-04 Xtalic Corporation Coated articles and methods
US20110220511A1 (en) * 2010-03-12 2011-09-15 Xtalic Corporation Electrodeposition baths and systems
KR102080009B1 (ko) * 2013-05-29 2020-04-08 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조방법
TWI708101B (zh) * 2019-07-05 2020-10-21 友達光電股份有限公司 畫素結構及顯示裝置

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3128540A (en) * 1960-09-19 1964-04-14 Gibson Electric Company Electrical contact
US5619356A (en) * 1993-09-16 1997-04-08 Sharp Kabushiki Kaisha Reflective liquid crystal display device having a compensator with a retardation value between 0.15 μm and 0.38 μm and a single polarizer
US6081310A (en) * 1997-11-25 2000-06-27 Sharp Kabushiki Kaisha Reflection-type liquid crystal display having a silver or silver alloy upper electrode layer
US6111684A (en) * 1997-04-02 2000-08-29 Gentex Corporation Electrochromic rearview mirror incorporating a third surface metal reflector and a display/signal light
JP2002226927A (ja) 2001-01-31 2002-08-14 Hitachi Metals Ltd 平面表示装置用Ａｇ合金系反射膜
US20020176029A1 (en) * 2000-09-14 2002-11-28 Masahiro Fujino Semipermeable liquid crystal display device and manufacturing method thereof
JP2003043522A (ja) 2001-08-02 2003-02-13 Sony Corp 反射型液晶表示装置
US20030147029A1 (en) * 2002-02-01 2003-08-07 Hong-Da Liu Structure of a reflective optically self-compensated liquid crystal display
US20030213956A1 (en) * 2002-05-17 2003-11-20 Kabushiki Kaisha Toshiba Active matrix type display device and method of manufacturing the same
US20030227250A1 (en) * 2002-05-08 2003-12-11 Han Nee Silver alloy thin film reflector and transparent electrical conductor
US20040051826A1 (en) 2002-09-18 2004-03-18 Samsung Electronics Co., Ltd. Liquid crystal display device
US20040114071A1 (en) * 2002-12-02 2004-06-17 Soo-Guy Rho Color filter panel, manufacturing method thereof and transflective liquid crystal display including the same
JP2004199050A (ja) 2002-12-06 2004-07-15 Citizen Watch Co Ltd 反射性基板とそれを用いた液晶表示パネル
US20050083461A1 (en) * 2003-10-16 2005-04-21 Lg.Philips Lcd Co., Ltd. Transflective-type liquid crystal display device and method of fabricating the same
JP2005128171A (ja) 2003-10-22 2005-05-19 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置
JP2005141250A (ja) 2001-03-29 2005-06-02 Nec Lcd Technologies Ltd 液晶表示装置の製造方法

Patent Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3128540A (en) * 1960-09-19 1964-04-14 Gibson Electric Company Electrical contact
US5619356A (en) * 1993-09-16 1997-04-08 Sharp Kabushiki Kaisha Reflective liquid crystal display device having a compensator with a retardation value between 0.15 μm and 0.38 μm and a single polarizer
US6111684A (en) * 1997-04-02 2000-08-29 Gentex Corporation Electrochromic rearview mirror incorporating a third surface metal reflector and a display/signal light
US6081310A (en) * 1997-11-25 2000-06-27 Sharp Kabushiki Kaisha Reflection-type liquid crystal display having a silver or silver alloy upper electrode layer
US20020176029A1 (en) * 2000-09-14 2002-11-28 Masahiro Fujino Semipermeable liquid crystal display device and manufacturing method thereof
JP2002226927A (ja) 2001-01-31 2002-08-14 Hitachi Metals Ltd 平面表示装置用Ａｇ合金系反射膜
JP2005141250A (ja) 2001-03-29 2005-06-02 Nec Lcd Technologies Ltd 液晶表示装置の製造方法
JP2003043522A (ja) 2001-08-02 2003-02-13 Sony Corp 反射型液晶表示装置
US20030147029A1 (en) * 2002-02-01 2003-08-07 Hong-Da Liu Structure of a reflective optically self-compensated liquid crystal display
US20030227250A1 (en) * 2002-05-08 2003-12-11 Han Nee Silver alloy thin film reflector and transparent electrical conductor
US20030213956A1 (en) * 2002-05-17 2003-11-20 Kabushiki Kaisha Toshiba Active matrix type display device and method of manufacturing the same
US20040051826A1 (en) 2002-09-18 2004-03-18 Samsung Electronics Co., Ltd. Liquid crystal display device
US20040114071A1 (en) * 2002-12-02 2004-06-17 Soo-Guy Rho Color filter panel, manufacturing method thereof and transflective liquid crystal display including the same
JP2004199050A (ja) 2002-12-06 2004-07-15 Citizen Watch Co Ltd 反射性基板とそれを用いた液晶表示パネル
US20050083461A1 (en) * 2003-10-16 2005-04-21 Lg.Philips Lcd Co., Ltd. Transflective-type liquid crystal display device and method of fabricating the same
JP2005128171A (ja) 2003-10-22 2005-05-19 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置

Also Published As

Publication number Publication date
CN1885114A (zh) 2006-12-27
US20070081106A1 (en) 2007-04-12
KR20060134540A (ko) 2006-12-28
JP2007004166A (ja) 2007-01-11

Similar Documents

Publication Publication Date Title
US7986387B2 (en) Transflective liquid crystal display device and method of fabricating the same
US7488983B2 (en) Transflective liquid crystal display device and method of fabricating the same
US7833813B2 (en) Thin film transistor array panel and method of manufacturing the same
US8169428B2 (en) Display substrate, method of manufacturing the same and display device having the same
US7956963B2 (en) Pixel structure for transflective LCD panel having a reflective structure formed in a depression on the TFT substrate
US20070031642A1 (en) Adhesive tape for a flexible display device and method of manufacturing a flexible display device using the same
US20230006024A1 (en) Display substrate, manufacturing method and display device
WO2013135073A1 (zh) 半透半反液晶显示阵列基板及其制造方法、显示装置
US20070096124A1 (en) Array substrate for a display panel, method of manufacturing the same, display panel having the same and liquid crystal display device having the same
US7335524B2 (en) Method of manufacturing a thin film transistor array panel
JP3696214B2 (ja) 薄膜トランジスタディスプレイパネル及びその製造方法
US10461102B2 (en) Display device, transflective array substrate, and manufacturing method thereof
CN101256323B (zh) 半穿透半反射式像素结构
KR20040059088A (ko) 액정표시소자의 제조방법 및 이 방법에 의한 액정표시소자
US20030164908A1 (en) Thin film transistor panel
KR20060088616A (ko) 액정 표시 패널의 제조방법
KR100906956B1 (ko) 반사-투과형 액정표시장치 및 이의 제조 방법
JPH0797191B2 (ja) アクティブマトリクスセルおよびその製作方法
KR100744401B1 (ko) 반투과형 액정표시장치의 어레이 기판 및 이의 제조 방법
US20070138472A1 (en) Method for fabricating TFT array substrate
KR100852169B1 (ko) 액정표시장치 및 이에 이용되는 어레이 기판의 제조방법
KR100852843B1 (ko) 반사형 패널 제조 방법
KR101282800B1 (ko) 칼라필터기판 및 그 제조방법, 액정 디스플레이 패널 및액정 디스플레이 장치
KR20050068611A (ko) 액정표시장치 제조방법
KR20060037699A (ko) 어레이 기판의 제조 방법

Legal Events

Date Code Title Description
AS Assignment

Owner name: SAMSUNG ELECTRONICS CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHO, SUNG-HWAN;YUM, HO-NAM;CHOO, DAE-HO;REEL/FRAME:018682/0057

Effective date: 20061218

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCF Information on status: patent grant

Free format text: PATENTED CASE

AS Assignment

Owner name: SAMSUNG DISPLAY CO., LTD., KOREA, REPUBLIC OF

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SAMSUNG ELECTRONICS CO., LTD.;REEL/FRAME:029045/0860

Effective date: 20120904

FPAY Fee payment

Year of fee payment: 4

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 12