US7414352B2 - Piezoelectric/electrostrictive body, piezoelectric/electrostrictive laminate, and piezoelectric/electrostrictive actuator - Google Patents

Piezoelectric/electrostrictive body, piezoelectric/electrostrictive laminate, and piezoelectric/electrostrictive actuator Download PDF

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US7414352B2
US7414352B2 US11/305,660 US30566005A US7414352B2 US 7414352 B2 US7414352 B2 US 7414352B2 US 30566005 A US30566005 A US 30566005A US 7414352 B2 US7414352 B2 US 7414352B2
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piezoelectric
electrostrictive
thickness direction
crystal grains
film
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US20060138899A1 (en
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Tsutomu Nanataki
Mutsumi Kitagawa
Toshikatsu Kashiwaya
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NGK Insulators Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
    • C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
    • C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/09—Forming piezoelectric or electrostrictive materials
    • H10N30/093—Forming inorganic materials
    • H10N30/097—Forming inorganic materials by sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/501—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane parallel to the stacking direction, e.g. polygonal or trapezoidal in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B41J2002/14258—Multi layer thin film type piezoelectric element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/03—Specific materials used
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3279—Nickel oxides, nickalates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/787—Oriented grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing

Definitions

  • the present invention relates to a piezoelectric/electrostrictive body, a piezoelectric/electrostrictive laminate, and a piezoelectric/electrostrictive film type actuator.
  • a piezoelectric/electrostrictive actuator has been known as an actuator capable of controlling a micro displacement of the order of sub-microns.
  • a piezoelectric/electrostrictive film type actuator a piezoelectric/electrostrictive portion constituted of a piezoelectric/electrostrictive porcelain composition, and a piezoelectric/electrostrictive driving portion having an electrode portion to which a voltage is applied are disposed on a substrate made of a ceramic.
  • This actuator is suitable for the control of the micro displacement, and additionally has superior properties such as a high electromechanical conversion efficiency, a high-speed response, a high durability, and a saved power consumption.
  • piezoelectric/electrostrictive actuators are used in various applications such as a piezoelectric pressure sensor, a probe moving mechanism of a scanning type tunnel microscope, a rectilinear guide mechanism in an ultra-precision working device, a servo valve for a hydraulic control, a head of a VTR device, a pixel constituting a flat panel type image display device, and a head of an ink jet printer.
  • piezoelectric/electrostrictive porcelain composition constituting the piezoelectric/electrostrictive portion.
  • a Pb(Mg 1/3 Nb 2/3 ) O 3 —PbTiO 3 —PbZrO 3 ternary solid solution system composition or a piezoelectric/electrostrictive porcelain composition in which a part of Pb of the composition is replaced with Sr, La or the like (see, e.g., JP-B-44-17103 and JP-B-45-8145).
  • a piezoelectric/electrostrictive element having superior piezoelectric/electrostrictive properties e.g., a piezoelectric d constant
  • a piezoelectric/electrostrictive portion itself that is the most important portion for determining the piezoelectric/electrostrictive properties of the piezoelectric/electrostrictive element.
  • the present invention has been developed in view of such problem of the conventional technology, and an object thereof is to provide a piezoelectric/electrostrictive body, a piezoelectric/electrostrictive laminate, and a piezoelectric/electrostrictive film type actuator which have superior piezoelectric/electrostrictive properties and which exhibit a sufficient durability even in a case where a flexural displacement is repeated a large number of times.
  • the present inventors have found that the above-described object can be achieved by setting a number ratio of flat crystal grains whose grain diameters in a width direction are longer than those in a thickness direction to be not less than a predetermined ratio with respect to a large number of crystal grains observed in an arbitrary section in the thickness direction, and they have completed the present invention.
  • a piezoelectric/electrostrictive body a piezoelectric/electrostrictive laminate, and a piezoelectric/electrostrictive film type actuator which will be described.
  • a piezoelectric/electrostrictive body constituted of a large number of crystal grains having piezoelectric/electrostrictive properties in the form of a film or a layer having one or more layers, wherein a number ratio of crystal grains whose grain diameters in a width direction are longer than those in a thickness direction is 70% or more of the large number of crystal grains observed in an arbitrary section in the thickness direction.
  • the piezoelectric/electrostrictive body according to any one of [1] to [3], wherein an average value of the numbers of the crystal grains in the thickness direction, observed in the arbitrary section in the thickness direction, is 2 or less.
  • a piezoelectric/electrostrictive laminate comprising a plurality of piezoelectric/electrostrictive bodies according to any one of [1] to [4]; and a plurality of film-like or layer-like electrodes, wherein the plurality of piezoelectric/electrostrictive bodies are alternately sandwiched between and laminated on the plurality of electrodes.
  • a piezoelectric/electrostrictive film type actuator comprising: a substrate made of a ceramic; and a piezoelectric/electrostrictive driving portion disposed on the substrate and having at least one piezoelectric/electrostrictive portion and at least one pair of electrodes, the substrate being displaced by driving of the piezoelectric/electrostrictive driving portion, wherein the piezoelectric/electrostrictive portion is constituted of the piezoelectric/electrostrictive body according to any one of [1] to [4].
  • the piezoelectric/electrostrictive body of the present invention has superior piezoelectric/electrostrictive properties, and produces an effect that a sufficient durability is exhibited even in a case where a flexural displacement is repeated a large number of times.
  • the piezoelectric/electrostrictive laminate of the present invention has superior piezoelectric/electrostrictive properties, and produces the effect that the sufficient durability is exhibited even in the case where the flexural displacement is repeated a large number of times.
  • the piezoelectric/electrostrictive film type actuator of the present invention has superior piezoelectric/electrostrictive properties, and produces the effect that the sufficient durability is exhibited even in the case where the flexural displacement is repeated a large number of times.
  • FIG. 1 is a partially sectional view schematically showing one embodiment of a piezoelectric/electrostrictive body of the present invention
  • FIG. 2 is a schematic diagram showing a method of calculating an average value of crystal grain numbers in a thickness direction of the piezoelectric/electrostrictive body
  • FIG. 3 is a sectional view schematically showing one embodiment of a piezoelectric/electrostrictive film type actuator of the present invention
  • FIG. 4 is a sectional view schematically showing another embodiment of the piezoelectric/electrostrictive film type actuator of the present invention.
  • FIG. 5 is a sectional view schematically showing still another embodiment of the piezoelectric/electrostrictive film type actuator of the present invention.
  • FIG. 6 is a sectional view schematically showing a further embodiment of the piezoelectric/electrostrictive film type actuator of the present invention.
  • FIG. 7( a ) is a top plan view schematically showing a further embodiment of the piezoelectric/electrostrictive film type actuator of the present invention.
  • FIG. 7( b ) is a sectional view schematically showing a still further embodiment of the piezoelectric/electrostrictive film type actuator of the present invention.
  • FIG. 8 is a sectional view showing a typical example of the embodiment shown in FIG. 5 ;
  • FIG. 9 is a sectional view showing another typical example of the embodiment shown in FIG. 5 ;
  • FIG. 10 is a sectional view showing still another typical example of the embodiment shown in FIG. 5 ;
  • FIG. 11 is a sectional view showing a further typical example of the embodiment shown in FIG. 5 ;
  • FIG. 12 is a sectional view showing a further typical example of the embodiment shown in FIG. 5 ;
  • FIG. 13 is a sectional view showing a still further typical example of the embodiment shown in FIG. 5 ;
  • FIG. 14( a ) is an X-X′ sectional view of the embodiment shown in FIG. 8 ;
  • FIG. 14( b ) is a top plan view of the embodiment shown in FIG. 8 .
  • second piezoelectric/electrostrictive portion 15 . . . lowermost piezoelectric/electrostrictive portion, 20 . . . common substrate, 30 . . . piezoelectric/electrostrictive body, 31 . . . crystal grains, 32 . . . flat crystal grain, 33 . . . specific crystal grain, 35 . . . straight line, 37 . . . grain boundary layer, 51 . . . piezoelectric/electrostrictive film type actuator, P . . . width of lower electrode, Q . . . width of intermediate electrode, R . . . width of upper electrode, T . . . grain diameter in thickness direction, and W . . . grain diameter in width direction.
  • FIG. 1 is a partially sectional view schematically showing one embodiment of a piezoelectric/electrostrictive body of the present invention, and is a drawing showing a section whose arbitrary portion is cut in a thickness direction.
  • a piezoelectric/electrostrictive body 30 has a film-like structure or a layered structure which are constituted of a large number of crystal grains 31 having one or more layers of the crystal grains.
  • the large number of crystal grains 31 has piezoelectric/electrostrictive properties, that is, the crystal grains are constituted of a piezoelectric/electrostrictive porcelain composition.
  • a number ratio (hereinafter referred to simply as the “flat crystal grain ratio”) of crystal grains (flat crystal grains 32 ) whose grain diameters W in a width direction are longer than grain diameters T in a thickness direction is 70% or more of a large number of crystal grains 31 observed in an arbitrary section in the thickness direction.
  • the flat crystal grain ratio is set to be not less than a predetermined ratio in this manner, the piezoelectric/electrostrictive body is largely displaced even in a case where a comparatively low voltage is applied, and the piezoelectric/electrostrictive body exhibits superior piezoelectric/electrostrictive properties.
  • the piezoelectric/electrostrictive body 30 exhibits a sufficient durability even in a case where a flexural displacement is repeated a large number of times. This is supposedly because the volume ratio of the grain boundary layers 37 having a comparatively low strength against a tensile or compressive stress generated during occurrence of the flexural displacement is small. It is to be noted that from a viewpoint that more superior piezoelectric/electrostrictive properties and durability be exhibited, the flat crystal grain ratio is preferably 78% or more, more preferably 85% or more.
  • an average value of ratios (W/T) (hereinafter referred to simply as the “aspect ratios”) of grain diameters (W) in the width direction to grain diameters (T) in the thickness direction is preferably 1.3 or more, more preferably 1.5 or more, especially preferably 1.7 or more (see FIG. 2 ).
  • the “grain diameter T in the thickness direction” is measured as a length (T) between an uppermost end and a lowermost end in the thickness direction.
  • the “grain diameter W in the width direction” is measured as a length (W) between a leftmost end and a rightmost end in a direction (width direction) crossing the thickness direction at right angles.
  • the “average value of the aspect ratios” 20 or more crystal grains 31 are arbitrarily extracted from the large number of crystal grains 31 observed in the arbitrary section of the piezoelectric/electrostrictive body 30 in the thickness direction, the respective aspect ratios (W/T) of the extracted crystal grains 31 are calculated, and the average value of the ratios is calculated.
  • the piezoelectric/electrostrictive body 30 of the present embodiment has a thickness of preferably 1 to 20 ⁇ m, more preferably 2 to 15 ⁇ m, especially preferably 3 to 10 ⁇ m.
  • the thickness of the piezoelectric/electrostrictive body 30 is less than 1 ⁇ m, the piezoelectric/electrostrictive body is excessively thin, and it becomes difficult to form the body.
  • the piezoelectric/electrostrictive body 30 has a thickness exceeding 20 ⁇ m, fluctuations of crystal grain diameters increase. As a result, the fluctuations of the piezoelectric/electrostrictive properties sometimes increase.
  • an average value (hereinafter referred to simply as the “crystal grain number average value”) of numbers of crystal grains in the thickness direction, observed in an arbitrary section in the thickness direction, is preferably 2 or less, more preferably 1.8 or less, especially preferably 1.5 or less.
  • crystal gain number average value in the thickness direction exceeds 2 or less, more preferably 1.8 or less, especially preferably 1.5 or less.
  • the numbers of the crystal grains crossing five straight lines 35 can be measured as four, five, five, four, and three from the straight line 35 on the left side of the figure.
  • the “crystal grain number average value in the thickness direction” can be calculated.
  • the “crystal grain number average value in the thickness direction” can be measured or calculated as “4.2”.
  • Typical examples of the piezoelectric/electrostrictive porcelain composition constituting the crystal grains include lead titanate zirconate. Furthermore, examples of lead titanate zirconate include:
  • the piezoelectric/electrostrictive laminate comprises a plurality of piezoelectric/electrostrictive bodies described above, and a plurality of film-like or layered electrodes.
  • the plurality of piezoelectric/electrostrictive bodies is laminated alternately with the plurality of electrodes, and each piezoelectric/electrostrictive body is sandwiched between the electrodes.
  • the piezoelectric/electrostrictive laminate has superior piezoelectric/electrostrictive properties, and a larger displacement can be obtained as compared with a case where the piezoelectric/electrostrictive body has only one layer.
  • the piezoelectric/electrostrictive laminate exhibits a sufficient durability even in the case where the flexural displacement is repeated a large number of times.
  • examples of a material of the electrode constituting the piezoelectric/electrostrictive laminate include at least one metal selected from a group consisting of Pt, Pd, Rh, Au, Ag, and an alloy of them. Above all, platinum or an alloy containing platinum as a main component is preferable because it has a high heat resistance during firing. It is to be noted that there is not any restriction on a dimension of the electrode.
  • a piezoelectric/electrostrictive film type actuator 51 comprises: a substrate 1 made of a ceramic; at least one piezoelectric/electrostrictive portion 2 disposed on the substrate 1 ; and a piezoelectric/electrostrictive driving portion having at least one pair of electrodes 4 , 5 electrically connected to the piezoelectric/electrostrictive portion 2 .
  • the substrate 1 is displaced by driving of this piezoelectric/electrostrictive driving portion.
  • the piezoelectric/electrostrictive portion 2 is bonded onto the substrate 1 in a state in which the electrode 4 is interposed, but the piezoelectric/electrostrictive portion may be bonded directly onto the substrate without interposing any electrode.
  • a “bonded” state refers to a state in which the piezoelectric/electrostrictive portion 2 is closely integrated with the substrate 1 or the electrode 4 by a solid-phase reaction between them without using any organic or inorganic adhesive.
  • the piezoelectric/electrostrictive portion 2 is constituted of any one of the piezoelectric/electrostrictive bodies described above. Therefore, the piezoelectric/electrostrictive film type actuator 51 of the present embodiment comprising the piezoelectric/electrostrictive portion 2 has superior piezoelectric/electrostrictive properties and can obtain a large displacement.
  • the piezoelectric/electrostrictive film type actuator 51 of the present embodiment exhibits a sufficient durability even in the case where the flexural displacement is repeated a large number of times.
  • the piezoelectric/electrostrictive film type actuator 51 comprises a plurality of piezoelectric/electrostrictive portions 2 , 3 , and a plurality of electrodes 4 , 5 , 6 .
  • the plurality of piezoelectric/electrostrictive portions 2 , 3 are preferably constituted to be alternately sandwiched and laminated between the plurality of electrodes 4 , 5 , and 6 .
  • This constitution is a so-called multilayered constitution, and a large flexural displacement can be preferably obtained at a low voltage.
  • the substrate constituting the piezoelectric/electrostrictive film type actuator is made of a ceramic, but there is not any special restriction on a ceramic type, but in respect of a heat resistance, a chemical stability, and an insulating property, the ceramic preferably contains at least one selected from a group consisting of stabilized zirconium oxide, aluminum oxide, magnesium oxide, mullite, aluminum nitride, silicon nitride, and glass. Above all, stabilized zirconium oxide is more preferable because it has a large mechanical strength and a superior tenacity.
  • stabilized zirconium oxide refers to zirconium oxide in which phase transition of a crystal is inhibited by addition of a stabilizer, and includes partially stabilized zirconium oxide in addition to stabilized zirconium oxide.
  • stabilized zirconium oxide examples include zirconium oxide containing, as the stabilizer, 1 to 30 mol % of calcium oxide, magnesium oxide, yttrium oxide, scandium oxide, ytterbium oxide, cerium oxide, or oxide of a rare earth metal. Above all, it is preferable to contain yttrium oxide as the stabilizer because a vibrating portion needs to have an especially high mechanical strength. In this case, preferably 1.5 to 6 mol %, more preferably 2 to 4 mol % of yttrium oxide is contained. Furthermore, 0.1 to 5 mol % of aluminum oxide is preferably contained.
  • a crystal phase of stabilized zirconium oxide may be a mixed phase of a cubic form+a monoclinic form, a mixed phase of a tetragonal form+the monoclinic form, a mixed phase of the cubic form+the tetragonal form+the monoclinic form or the like, and a main crystal phase is preferably the tetragonal form or a mixed phase of the tetragonal form+the cubic form from viewpoints of strength, tenacity, and durability.
  • the substrate has a thickness of preferably 1 ⁇ m to 1 mm, more preferably 1.5 to 500 ⁇ m, especially preferably 2 to 200 ⁇ m.
  • the thickness of the substrate is less than 1 ⁇ m, the mechanical strength of the piezoelectric/electrostrictive film type actuator sometimes drops.
  • the thickness exceeds 1 mm, a rigidity of the substrate against a generated contraction stress increases in a case where the voltage is applied to the piezoelectric/electrostrictive portion. The flexural displacement of the piezoelectric/electrostrictive portion is sometimes reduced.
  • the substrate 1 may have a shape comprising: a thin portion 1 c provided with a bonding surface 1 a formed on one surface thereof and having the above-described thickness; and a thick portion 1 b disposed in a portion other than a portion corresponding to the bonding surface 1 a and having a thickness larger than that of the thin portion 1 c .
  • the electrode 4 (or the piezoelectric/electrostrictive portion) is disposed in a region substantially corresponding to the bonding surface 1 a .
  • the substrate 1 has such shape, it is possible to constitute the piezoelectric/electrostrictive film type actuator having sufficiently large flexural displacement and mechanical strength. As shown in FIG.
  • a common substrate 20 may be used in which the shape of the substrate 1 shown in FIG. 4 is continuously formed.
  • a plurality of piezoelectric/electrostrictive driving portion units 10 may be disposed on the common substrate 20 , and each of the units includes a first piezoelectric/electrostrictive portion 12 , a second piezoelectric/electrostrictive portion 13 , and electrodes 4 , 5 , and 6 .
  • a surface shape shape of a surface to which the electrode 4 is bonded in FIG. 3
  • examples of the surface shape include a rectangular shape, a square shape, a triangular shape, an elliptic shape, a perfect circle shape, a square shape with a curvature, a rectangular shape with a curvature, and a composite shape obtained by combining these shapes.
  • the shape of the whole substrate and the substrate may have a capsule shape having an appropriate internal space.
  • a central portion is preferably bent on a side opposite to a surface on which the piezoelectric/electrostrictive portions 2 , 3 are disposed because the shape has a high linearity of the flexural displacement with respect to an electric field.
  • a sectional shape in a thickness direction is preferably a so-called W-shape in which opposite end portions of the substrate protrude in a vertical direction on a bottom-portion side as viewed from a central line of the substrate in a longitudinal direction, and the central portion protrudes upwards. It is to be noted that the bent shape shown in FIG.
  • the W-shape shown in FIG. 10 can be formed by adjusting a firing contraction start timing or a firing contraction amount of each of the piezoelectric/electrostrictive portions 2 and 3 , or the shape of the thin portion 1 c.
  • the electrode is electrically connected to the piezoelectric/electrostrictive portion, and is disposed between the respective piezoelectric/electrostrictive portions.
  • the electrode is preferably disposed in such a manner as to include a region of the piezoelectric/electrostrictive portion that substantially contributes to the flexural displacement or the like.
  • each of the electrodes 4 , 5 , and 6 is preferably disposed on a region having an area of 80% or more of the surface including the vicinity of the central portion and provided with the first piezoelectric/electrostrictive portion 12 or the second piezoelectric/electrostrictive portion 13 .
  • a lowermost-layer electrode 14 and an uppermost-layer electrode 16 in the respective piezoelectric/electrostrictive driving portion units 10 a to 10 c are shared by the respective piezoelectric/electrostrictive driving portion units 10 a to 10 c .
  • the electrode 14 may be of an integral type disposed in a region corresponding to piezoelectric/electrostrictive portions 2 a to 2 c , 3 a to 3 c . Such integrated, electrode 14 does not have to be formed into a shape corresponding to the individual piezoelectric/electrostrictive portions 2 a to 2 c , 3 a to 3 c , and positioning is facilitated in forming the electrodes.
  • an example of a material of the electrode is at least one metal selected from a group consisting of Pt, Pd, Rh, Au, Ag, and an alloy of them. Above all, platinum or an alloy containing platinum as a main component is preferable because it has a high heat resistance during the firing of the piezoelectric/electrostrictive portion. There is not any special restriction on a dimension of the electrode. For example, as shown in FIGS.
  • each of the electrodes 4 , 5 , and 6 is preferably disposed in a broader region including a region corresponding to the electrode positioned in a lower layer successively from the electrode 4 positioned in a lowermost layer.
  • the piezoelectric/electrostrictive portion positioned in an upper layer can be distorted more than the piezoelectric/electrostrictive portion positioned in a lower layer, a bending efficiency can be enhanced, and the flexural displacement can be developed more effectively.
  • the intermediately positioned electrode 5 is preferably disposed in a region broader than that of the electrode 4 or 6 positioned in the lower or upper layer.
  • the intermediately positioned electrode 5 is preferably disposed in a region smaller than that of the electrode 4 or 6 .
  • the breadth difference is preferably optimized in consideration of an electric field distribution.
  • a value of a ratio of an area (area of a forming surface) in which the electrode is disposed is preferably 0.5 to 2, more preferably 0.67 to 1.5, especially preferably 0.83 to 1.2. It is to be noted that in FIGS. 11 to 13 , symbol P denotes a width of a lower electrode, Q denotes a width of an intermediate electrode, and R denotes a width of an upper electrode.
  • a thickness of the electrode is preferably 15 ⁇ m or less, more preferably 5 ⁇ m or less. When the thickness exceeds 15 ⁇ m, the electrode functions as a relaxation layer, and the flexural displacement is sometimes reduced. It is to be noted that the thickness of the electrode may be 0.05 ⁇ m or more from a viewpoint that a substantial function of the electrode be exhibited.
  • the piezoelectric/electrostrictive body can be manufactured by firing a piezoelectric/electrostrictive porcelain composition.
  • a raw material such as an oxide of each of elements PbO, MgO, Nb 2 O 5 , TiO 2 , ZrO 2 , and NiO, or carbonate in order to obtain a desired composition.
  • the material is mixed with some water by a mixing method such as ball milling to obtain a mixed slurry.
  • the resultant mixed slurry can be dried by using a drier or a filter to obtain a mixed material.
  • the resultant mixed material can be calcined and crushed to thereby prepare the piezoelectric/electrostrictive porcelain composition having desired particle diameters. It is to be noted that calcining may be performed at a temperature of 750 to 1300° C.
  • the crushing may be performed by a method such as the ball milling.
  • a ratio of a strength of a strongest diffraction line of a pyrochlore phase to that of a strongest diffraction line of a perovskite phase in the diffraction strength measured by an X-ray diffraction device is preferably 5% or less, more preferably 2% or less.
  • the piezoelectric/electrostrictive porcelain composition has an average particle diameter of preferably 0.07 to 1 ⁇ m, more preferably 0.1 to 0.7 ⁇ m. It is to be noted that the particle diameter may be adjusted by a thermal treatment of a powder of the piezoelectric/electrostrictive porcelain composition at 400 to 750° C. In this case, finer particles are integrated with other particles to constitute a powder having uniformed particle diameters, and the piezoelectric/electrostrictive body having the uniformed particle diameters can be preferably formed.
  • the piezoelectric/electrostrictive porcelain composition may be prepared by, for example, an alkoxide method, a co-precipitation method or the like.
  • the composition After adding a plasticizer, a dispersant, a solvent or the like to the resultant powdered piezoelectric/electrostrictive porcelain composition to form the slurry using a general mixing device such as a ball mill, the composition can be molded into a sheet by a general molding machine such as a doctor blade.
  • the sheet-like molded body can be sintered at 800 to 1300° C. for one minute to ten hours to obtain a sintered body.
  • an electrode is formed if necessary, and a polarization treatment can be performed to manufacture the piezoelectric/electrostrictive body of the present embodiment.
  • an atmosphere adjusting material having the same composition as the piezoelectric/electrostrictive porcelain composition is allowed to coexist in a container for the sintering. Moreover, an amount per space unit volume of this atmosphere adjusting material included in the container may be adjusted.
  • the thickness of the molded body may be adjusted in such a manner that the thickness becomes excessively large, although this depends on the particle diameters of the piezoelectric/electrostrictive porcelain composition for use.
  • the sheet-like molded body is prepared alternately with formation of the electrode a plurality of times.
  • a plurality of sheet-like molded bodies each provided with the electrode is laminated so that a piezoelectric/electrostrictive laminate of the present embodiment can be manufactured.
  • the polarization treatment is performed on appropriate conditions.
  • the polarization treatment is preferably performed by heating as in a known method. A heating temperature depends on Curie point of a piezoelectric/electrostrictive porcelain, but is preferably set to 40 to 200° C.
  • a layer constituted of the piezoelectric/electrostrictive porcelain composition is formed on a substrate made of a ceramic, or an electrode formed on a substrate surface.
  • Examples of a method of forming the electrode include ion beam, sputtering, vacuum evaporation, PVD, ion plating, CVD, plating, aerosol deposition, screen printing, spraying, and dipping. Above all, a sputtering process or a screen printing process is preferable in respect of bondability with respect to the substrate and a piezoelectric/electrostrictive portion.
  • an appropriate temperature is selected depending on a material of the electrode, and the electrode can be integrated with the substrate and/or the piezoelectric/electrostrictive portion by a thermal treatment at about 800 to 1400° C.
  • the thermal treatment may be performed every time the electrode is formed, or may be performed together with the sintering of the layer constituted of the piezoelectric/electrostrictive porcelain composition.
  • the thermal treatment is not performed at a temperature which exceeds the sintering temperature of the layer constituted of the piezoelectric/electrostrictive porcelain composition.
  • Examples of a method of forming the layer constituted of the piezoelectric/electrostrictive porcelain composition on the substrate include ion beam, sputtering, vacuum evaporation, PVD, ion plating, CVD, plating, sol-gel, aerosol deposition, screen printing, spraying, and dipping. Above all, a screen printing process is preferable because the layer can be easily and continuously formed into a high-precision shape and thickness.
  • the electrode is formed on the layer formed on the substrate and constituted of the piezoelectric/electrostrictive porcelain composition by a method similar to the above-described method. It is to be noted that on this electrode, the layer constituted of the piezoelectric/electrostrictive porcelain composition, and the electrode are alternately and repeatedly formed until a desired multilayered constitution is obtained.
  • the piezoelectric/electrostrictive portion constituted of crystal grains formed of the piezoelectric/electrostrictive porcelain composition can be bonded onto the substrate directly or via the electrode.
  • the sintering does not have to be necessarily integrally performed, and may be successively performed every time one layer constituted of the piezoelectric/electrostrictive porcelain composition is formed.
  • the laminate including the electrodes is preferably sintered integrally.
  • the sintering temperature is preferably 800 to 1350° C., more preferably 900 to 1300° C.
  • the bonding of the substrate or the electrode with respect to the piezoelectric/electrostrictive portion becomes incomplete, or denseness of the piezoelectric/electrostrictive portion sometimes becomes insufficient.
  • the temperature exceeds 1350° C. it is sometimes difficult to form the piezoelectric/electrostrictive portion having a desired composition.
  • a maximum temperature retention time at a sintering time is preferably one minute or more and ten hours or less, more preferably five minutes or more and four hours or less.
  • the piezoelectric/electrostrictive portion is insufficiently densified, and desired properties are not obtained in some case.
  • the maximum temperature retention time exceeds ten hours, the piezoelectric/electrostrictive properties sometimes drop.
  • the polarization treatment is preferably performed by the heating as in a known method.
  • the heating temperature depends on Curie point of the piezoelectric/electrostrictive porcelain, but is preferably set to 40 to 200° C.
  • [Flat crystal grain ratio] A piezoelectric/electrostrictive body was cut in a thickness direction in an arbitrary position to expose a section. If necessary, etching or the like was performed. Thereafter, the section was observed with a microscope, and a “flat crystal grain ratio (%)” was calculated.
  • a piezoelectric/electrostrictive body was cut in a thickness direction in an arbitrary position to expose a section. If necessary, etching or the like was performed. Thereafter, the section was observed with a microscope, 20 or more crystal grains were arbitrarily extracted, aspect ratios (W/T) of the respective extracted crystal grains were calculated, and an average value of them was calculated as an “average value of the aspect ratios”.
  • [Crystal grain number average value in thickness direction] A piezoelectric/electrostrictive body was cut in a thickness direction in an arbitrary position to expose a section. If necessary, etching or the like was performed. Thereafter, the section was observed with a microscope, and 20 or more straight lines were arbitrarily drawn in parallel with the thickness direction. The number of the crystal grains crossing each straight line was measured for each straight line, and an average value of them was calculated as the “crystal grain number average value in the thickness direction”.
  • [Flexural displacement] A voltage was applied between electrodes of a piezoelectric/electrostrictive film type actuator in such a manner as to obtain an electric field of 3 kV/mm, and a generated flexural displacement ( ⁇ m) was measured with a laser displacement measuring device.
  • a lower electrode (dimension: 1.2 ⁇ 0.8 mm, thickness: 3 ⁇ m) made of Pt was formed by a screen printing process on a ZrO 2 substrate (dimension of a thin portion: 1.6 ⁇ 1.1 mm, thickness: 7 ⁇ m) stabilized with Y 2 O 3 and having a smooth thin portion, and the electrode was integrated with the substrate by a thermal treatment at 1300° C. for two hours.
  • a piezoelectric material constituted of a piezoelectric porcelain composition containing 98.5% by mass of Pb 1.00 (Mg 1/3 Nb 2/3 ) 0.20 Ti 0.43 Zr 0.37 O 3 and 1.5% by mass of NiO was formed into a film having a dimension of 1.3 ⁇ 0.9 mm and a thickness of 8 ⁇ m.
  • the resultant film was placed in a container whose atmosphere was adjusted by allowing an atmosphere adjusting material having the same composition as the piezoelectric porcelain composition to coexist in such a manner that an amount of the atmosphere adjusting material included per in-container space unit volume indicated a value shown in Table 1.
  • a thermal treatment (sintering) was performed at 1275° C. for two hours.
  • each thermally treated piezoelectric portion was 5.1 ⁇ m.
  • the thermal treatment was performed to manufacture each piezoelectric film type actuator (Examples 1 to 3, Comparative Examples 1, 2) having a film-like piezoelectric driving portion. Measurement results of physical property values and flexural displacements of the manufactured piezoelectric film type actuators are shown in Table 1.
  • a piezoelectric film type actuator (Example 4) was manufactured in the same manner as in Examples 1 to 3 and Comparative Examples 1, 2 described above except that laminating and thermal treating of piezoelectric materials were repeated by a screen printing process eight times. It is to be noted that thermal treatment conditions are similar to those of Example 3. Measurement results of physical property values and flexural displacement of the manufactured piezoelectric film type actuator are shown in Table 2.
  • a piezoelectric film type actuator (Example 5) was manufactured in the same manner as in Examples 1 to 3 and Comparative Examples 1, 2 described above except that a piezoelectric material was laminated in a thickness of 10 ⁇ m by a screen printing process. It is to be noted that thermal treatment conditions are similar to those of Example 2. Measurement results of physical property values and flexural displacement of the manufactured piezoelectric film type actuator are shown in Table 3.
  • a piezoelectric film type actuator (Example 6) was manufactured in the same manner as in Examples 1 to 3 and Comparative Examples 1, 2 described above except that after laminating and thermally treating a piezoelectric material in a thickness of 5 ⁇ m by a screen printing process, the piezoelectric material was again laminated and thermally treated in a thickness of 5 ⁇ m. It is to be noted that thermal treatment conditions are similar to those of Example 2. Measurement results of physical property values and flexural displacement of the manufactured piezoelectric film type actuator are shown in Table 3.
  • a piezoelectric film type actuator (Example 7) was manufactured in the same manner as in Examples 1 to 3 and Comparative Examples 1, 2 except that after laminating piezoelectric materials in a thickness of 5 ⁇ m by a screen printing process, an upper electrode made of Pt, and a piezoelectric material having a thickness of 5 ⁇ m were formed by the screen printing process before a thermal treatment was performed. It is to be noted that thermal treatment conditions are similar to those of Example 2. Measurement results of physical property values and flexural displacement of the manufactured piezoelectric film type actuator are shown in Table 4.
  • a piezoelectric/electrostrictive body, a piezoelectric/electrostrictive laminate, and a piezoelectric/electrostrictive film type actuator of the present invention are favorably used in a probe moving mechanism of a scanning type tunnel microscope, a rectilinear guide mechanism in an ultra-precision working device, a servo valve for a hydraulic control, a head of a VTR device, a pixel constituting a flat panel type image display device, a head of an ink jet printer or the like.

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US20140084754A1 (en) * 2012-09-21 2014-03-27 Tdk Corporation Thin film piezoelectric device
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US8421310B2 (en) * 2007-09-27 2013-04-16 Kyocera Corporation Multi-layer piezoelectric element, ejection apparatus using the same and fuel ejection system
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US8084924B2 (en) 2008-03-21 2011-12-27 Ngk Insulators, Ltd. Piezoelectric/electrostrictive film element having wavy grain boundaries
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US8597567B2 (en) 2008-11-10 2013-12-03 Ngk Insulators, Ltd. Ceramic sheet and method for producing the same
US20140084754A1 (en) * 2012-09-21 2014-03-27 Tdk Corporation Thin film piezoelectric device
US20160327445A1 (en) * 2015-05-08 2016-11-10 Rosemount Aerospace Inc. High temperature flexural mode piezoelectric dynamic pressure sensor
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