US7326633B2 - Anisotropic conductive film - Google Patents
Anisotropic conductive film Download PDFInfo
- Publication number
- US7326633B2 US7326633B2 US11/228,943 US22894305A US7326633B2 US 7326633 B2 US7326633 B2 US 7326633B2 US 22894305 A US22894305 A US 22894305A US 7326633 B2 US7326633 B2 US 7326633B2
- Authority
- US
- United States
- Prior art keywords
- nano
- scaled
- anisotropic conductive
- film
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/026—Nanotubes or nanowires
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0329—Intrinsically conductive polymer [ICP]; Semiconductive polymer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10378—Interposers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/743—Carbon nanotubes, CNTs having specified tube end structure, e.g. close-ended shell or open-ended tube
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/753—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc. with polymeric or organic binder
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
- Y10S977/766—Bent wire, i.e. having nonliner longitudinal axis
- Y10S977/768—Helical wire
- Y10S977/77—Helical wire formed with polyamide polymers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/846—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes internal modifications, e.g. filling, endohedral modifications
Definitions
- the present invention relates to anisotropic conductive films used for electronically and mechanically bonding together electronic components, such as semiconductor components and circuit boards.
- an anisotropic conductive film generally is used.
- the anisotropic conductive film includes an insulative adhesive film and a plurality of conductive particles uniformly dispersed therein.
- the anisotropic conductive film is compressed between the semiconductor component and the circuit board.
- the pins of the semiconductor component are aligned with and face the circuits of the circuit board.
- the conductive particles therein allow the pins of the semiconductor component to electrically connect the circuits of the circuit board.
- the adhesive film thus mechanically bonds the semiconductor component and the circuit board together, and the adhesive film further serves as an insulative overcoating, covering joint portions between the semiconductor component and the circuit board.
- sizes of above-mentioned conductive particles are at a scale of about a micrometer.
- the sizes of the pins/contacts of the semiconductor component and the circuits of the circuit board are very small. Therefore, an amount of the micrometer-scaled conductive particles that are compressed between pins/contacts of the semiconductor component and a corresponding circuit of the circuit board is limited.
- a contact interface between the pins/contacts of the semiconductor component and the corresponding circuit of the circuit board also is small.
- the anisotropic conductive film with micrometer-scale conductive particles generally cannot provide a satisfactory bonding between the semiconductor component and the circuit board.
- An anisotropic conductive film includes an insulative adhesive film and a plurality of nano-scaled conductive particles.
- the nano-scaled conductive particles are dispersed in the insulative adhesive film.
- the nano-scaled conductive particle can be nanotubes containing metal particles and polyaniline therein.
- the present anisotropic conductive film has nano-scaled conductive particles therein.
- the amount of the nano-scaled conductive particles that can be compressed and thereby disposed between two corresponding contacts is significantly increased, when compared to the use of micro-particles.
- the conductive interface area between the two corresponding contacts is correspondingly enlarged.
- the polyaniline, carried in the opening and inside of the nano-scaled conductive particles also has a better, more favorable viscosity, resulting in improved flow distribution thereof. The bonding effect between a semiconductor component and a circuit board is consequently improved.
- anisotropic conductive film can be better understood with reference to the following drawings.
- the components in the drawings are not necessarily to scale, the emphasis instead being placed upon clearly illustrating the principles of the present anisotropic conductive film.
- like reference numerals designate corresponding parts throughout the several views.
- FIG. 1 is a schematic, side cross-sectional view of an anisotropic conductive film in accordance with a preferred embodiment
- FIG. 2 is a schematic, side cross-sectional view of the anisotropic conductive film of FIG. 1 , showing the anisotropic conductive film in use;
- FIG. 3 is a schematic, side cross-sectional view of a bonding structure of a semiconductor component and a circuit board using an anisotropic conductive film in accordance with a first exemplary embodiment
- FIGS. 4A to 4F are schematic, side cross-sectional views showing successive stages in a method of forming an anisotropic conductive film, in accordance with a second exemplary embodiment, and bonding a semiconductor chip to a circuit board using the anisotropic conductive film.
- the anisotropic conductive film 10 includes an insulative adhesive film 12 and a plurality of nano-scaled conductive particles 14 (formed of, e.g., carbon or copper).
- the nano-scaled conductive particles 14 are dispersed in the adhesive film 12 .
- the nano-scaled conductive particles 14 are concentrated proximate a single primary (non-edge) surface of film 10 to better control the electrical isolation thereof except where selected electrical contacts are desired.
- the adhesive film 12 can be made of, e.g. an epoxy resin, a phenol-aldehyde resin, a hydroxyl polyester resin, a hydroxyl acrylic acid resins, and/or another suitable insulative resin, each being curable by heating or ultraviolet irradiation.
- the adhesive film 12 is preferably composed, at least substantially, of one or more type of epoxy resins.
- the epoxy resins can advantageously be selected from the group consisting of bisphenol-aldehyde epoxy resin, a phenol-aldehyde resin (for use in an epoxy paint), and an epoxy compound having at least two ethylene oxide groups contained in a molecular thereof.
- the adhesive film 12 can further include a hardening agent.
- Each nano-scaled conductive particle 14 is a nanotube containing metal particles and polyaniline therein.
- the nanotube can itself be formed, for example, of carbon, a metal (such as copper), or other sufficiently conductive material and may be a multi-walled nanotube or a single-walled nanotube.
- the nanotube has at least one open end, so that the metal particles and polyaniline can be introduced into the nanotube therethrough.
- the metal particles are composed, at least substantially, of a least one material selected from the group consisting of gold, silver, copper, nickel, and iron.
- the polyaniline has a good electrical conductivity and adhesive ability. The structural formula of the polyaniline is shown as follows:
- the hydrogen atoms in the molecular chain of the polyaniline can be replaced by metal ions, such as copper ions, iron ions, nickel ions, or gold ions, etc.
- metal ions such as copper ions, iron ions, nickel ions, or gold ions, etc.
- A represents metal ion
- the anisotropic conductive film 10 pins of the semiconductor component and the circuit board are arranged to face and align with each other.
- the anisotropic conductive film 10 is applied and compressed between the semiconductor component and the circuit board.
- the nano-scaled conductive particles 14 provide an electrically conductive connection between the pins or contacts of the semiconductor component and the circuit board in Z-axis direction.
- the pins of the semiconductor component in X-axis and Y-axis directions are electrically insulated from each other. That is, any neighboring two pins of the semiconductor component are electrically insulated from each other.
- the pins of the component remain insulated in those directions due to the thickness of adhesive film 12 generally far exceeding that of the deposits of nano-scaled conductive particles 14 . Further, separate deposits of nano-scaled conductive particles 14 remain insulated from one another due to the presence of the material of adhesive film 12 therebetween. Only in those locations where the pins or contacts of the component and/or board have expressly been compressed into contact with the nano-scaled conductive particles 14 has electrical connectivity been established. In those locations the adhesive film 12 has been substantially displaced, thereby permitting an electrical connection to be formed between selected nano-scaled conductive particles 14 and corresponding pins and/or contacts.
- the bonded structure 28 includes a semiconductor component 34 , a circuit board 36 , and an anisotropic conductive film 30 .
- the anisotropic conductive film 30 includes an insulative film 32 advantageously made of a resin and a plurality of nano-scaled conductive particles 31 .
- a plurality of contacts 342 is formed on an outer surface of the semiconductor component 34 .
- a passive film 344 formed on the surface of the semiconductor component 34 , surrounds the electrodes 342 .
- a thickness of each of the contacts 342 is smaller than that of the passive film 344 .
- the contacts 342 are generally made of metals, such as aluminum, copper, etc., known to be good conductors of electricity.
- the passive film 344 can be made of resins such as polyimide resin, phenylene cyclobutene, etc.
- the circuit board 36 includes a plurality of contacts 362 , respectively corresponding to the contacts 342 of the semiconductor component 34 .
- the circuit board 36 may be a resin substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.
- the contacts 362 of the circuit board 36 may be a metallic conductor such as aluminum, copper, etc.
- the semiconductor component 34 and the circuit board 36 are respectively pressed along the directions of the arrows and then are externally heated.
- the insulative resin 32 is melted and therefore deformable.
- selected nano-scaled conductive particles 31 provide an electrically conductive interface between the component contacts 342 of the semiconductor component 34 and the board contacts 362 of the circuit board 36 , respectively.
- the insulative resin 32 and the polyaniline are cured, for example, by laser irradiation or ultraviolet irradiation.
- the size of the nano-scaled conductive particle 31 is very small, therefore, compared to the conventional micro-scaled conductive particles, more of the nano-scaled conductive particles 31 can be disposed and compressed between two corresponding contacts 342 and 362 .
- the conductive interface area between the two corresponding contacts 342 and 362 is consequently enlarged.
- the polyaniline contained by (i.e., in the opening and inside thereof) the nano-scaled conductive particles 31 also has a better, more favorable viscosity. The bonding effect of the semiconductor component 34 and the circuit board 36 is thereby improved.
- FIGS. 4A to 4F successive stages in a method for forming an anisotropic conductive film in accordance with a second exemplary embodiment, and the subsequent bonding of a semiconductor chip to a circuit board using the anisotropic conductive film are shown.
- the method includes the steps of:
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Conductive Materials (AREA)
Abstract
Description
-
- (a) as shown in
FIG. 4A , forming a layer of anadhesive film 42 on a surface of aresin film 43, wherein theadhesive film 42 and theresin film 43 cooperatively function as a protective film; - (b) as shown in
FIG. 4B , dispersing a plurality of nano-scaledconductive particles 41 on a surface of theadhesive film 42, wherein the nano-scaledconductive particles 41 are affixed on that surface of theadhesive film 42. - (c) as shown in
FIG. 4C , forming a layer of aninsulative adhesive film 40 on the surface of theadhesive film 42, wherein the nano-scaledconductive particles 41 are dispersed in theinsulative adhesive film 40, the nano-scaledconductive particles 41 thereby being generally proximate the face of theinsulative adhesive film 40 originally formed adjacent theadhesive film 42; - (d) as shown in
FIG. 4D , removing theadhesive film 42 and theresin film 43, and placing theinsulative adhesive film 40, carrying the nano-scaledconductive particles 41, on a surface of asemiconductor chip 49, the chip surface having a plurality ofbumps 490 thereon; - (e) as shown in
FIG. 4E , aligning thebumps 490 withrespective contacts 480 of acircuit board 48, then pressing and heating thesemiconductor chip 49 and thecircuit board 48 using twoclamping plates contacts 480 andbumps 490 each thereby coming into mutual contact with selected nano-scaledconductive particles 41; and - (f) as shown in
FIG. 4F , after having brought thebumps 490 into electrical contact withrespective contacts 480 via selected nano-scaledconductive particles 41, curing theinsulative adhesive film 40, thereby bonding thesemiconductor chip 49 and thecircuit board 48 together.
- (a) as shown in
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93136497 | 2004-11-26 | ||
TW093136497A TWI323901B (en) | 2004-11-26 | 2004-11-26 | Anisotropic conductive material |
Publications (2)
Publication Number | Publication Date |
---|---|
US20060113511A1 US20060113511A1 (en) | 2006-06-01 |
US7326633B2 true US7326633B2 (en) | 2008-02-05 |
Family
ID=36566517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/228,943 Expired - Fee Related US7326633B2 (en) | 2004-11-26 | 2005-09-16 | Anisotropic conductive film |
Country Status (2)
Country | Link |
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US (1) | US7326633B2 (en) |
TW (1) | TWI323901B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9365749B2 (en) | 2013-05-31 | 2016-06-14 | Sunray Scientific, Llc | Anisotropic conductive adhesive with reduced migration |
US9777197B2 (en) | 2013-10-23 | 2017-10-03 | Sunray Scientific, Llc | UV-curable anisotropic conductive adhesive |
US10854549B2 (en) | 2018-12-31 | 2020-12-01 | Micron Technology, Inc. | Redistribution layers with carbon-based conductive elements, methods of fabrication and related semiconductor device packages and systems |
US11189588B2 (en) | 2018-12-31 | 2021-11-30 | Micron Technology, Inc. | Anisotropic conductive film with carbon-based conductive regions and related semiconductor assemblies, systems, and methods |
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JP2007091959A (en) * | 2005-09-30 | 2007-04-12 | Sumitomo Electric Ind Ltd | Anisotropically conductive adhesive |
DE102005063403A1 (en) * | 2005-12-23 | 2007-09-06 | Electrovac Ag | Adhesive or bonding material |
JP2007207530A (en) * | 2006-01-31 | 2007-08-16 | Toshiba Corp | Anisotropic conductive film, and x-ray plane detector, infrared ray plane detector, and display device |
US7838976B2 (en) * | 2006-07-28 | 2010-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a semiconductor chip enclosed by a body structure and a base |
US7600667B2 (en) | 2006-09-29 | 2009-10-13 | Intel Corporation | Method of assembling carbon nanotube reinforced solder caps |
KR100795309B1 (en) | 2006-11-16 | 2008-01-15 | 성균관대학교산학협력단 | Method for preparing conductive ball using carbon nano tube |
JP2008235556A (en) * | 2007-03-20 | 2008-10-02 | Sumitomo Electric Ind Ltd | Wiring board module and its manufacturing method |
DE102007025233A1 (en) * | 2007-05-31 | 2008-12-04 | Robert Bosch Gmbh | Control unit of a motor vehicle |
EP2101335A1 (en) * | 2008-03-10 | 2009-09-16 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Mouldable material. |
WO2010125966A1 (en) * | 2009-04-28 | 2010-11-04 | 日立化成工業株式会社 | Anisotropic conductive particles |
US8822843B2 (en) * | 2011-03-07 | 2014-09-02 | Nokia Corporation | Apparatus and associated methods |
US9249014B2 (en) * | 2012-11-06 | 2016-02-02 | Infineon Technologies Austria Ag | Packaged nano-structured component and method of making a packaged nano-structured component |
US20160254244A1 (en) * | 2013-05-31 | 2016-09-01 | Sunray Scientific, Llc | Systems and Methods Utilizing Anisotropic Conductive Adhesives |
TWI550149B (en) * | 2013-09-06 | 2016-09-21 | Zheng An Zhi | A pyroelectric material and a method for producing the same, and a method for producing the same Efficient pyroelectric fiber |
CN104951156A (en) * | 2014-03-31 | 2015-09-30 | 宸盛光电有限公司 | Capacitive touch control device |
CN107840957B (en) * | 2017-11-23 | 2020-09-22 | 华南理工大学 | Dandelion-shaped gold nanoparticle @ polyaniline nanocomposite prepared by one-pot method and preparation method and application thereof |
CN108538792A (en) | 2018-05-16 | 2018-09-14 | 武汉华星光电半导体显示技术有限公司 | The controllable anisotropic conductive adhesive paste and preparation method thereof of conductive materials distribution |
KR102127229B1 (en) * | 2018-11-27 | 2020-06-29 | 주식회사 아이에스시 | Connector for electrical connection |
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US5686703A (en) | 1994-12-16 | 1997-11-11 | Minnesota Mining And Manufacturing Company | Anisotropic, electrically conductive adhesive film |
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2004
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-
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9365749B2 (en) | 2013-05-31 | 2016-06-14 | Sunray Scientific, Llc | Anisotropic conductive adhesive with reduced migration |
US9777197B2 (en) | 2013-10-23 | 2017-10-03 | Sunray Scientific, Llc | UV-curable anisotropic conductive adhesive |
US10854549B2 (en) | 2018-12-31 | 2020-12-01 | Micron Technology, Inc. | Redistribution layers with carbon-based conductive elements, methods of fabrication and related semiconductor device packages and systems |
US11189588B2 (en) | 2018-12-31 | 2021-11-30 | Micron Technology, Inc. | Anisotropic conductive film with carbon-based conductive regions and related semiconductor assemblies, systems, and methods |
US11749608B2 (en) | 2018-12-31 | 2023-09-05 | Micron Technology, Inc. | Device packages including redistribution layers with carbon-based conductive elements, and methods of fabrication |
US11881468B2 (en) | 2018-12-31 | 2024-01-23 | Micron Technology, Inc. | Anisotropic conductive film with carbon-based conductive regions and related semiconductor device assemblies and methods |
Also Published As
Publication number | Publication date |
---|---|
TWI323901B (en) | 2010-04-21 |
TW200617995A (en) | 2006-06-01 |
US20060113511A1 (en) | 2006-06-01 |
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