US6999297B1 - Breakdown-resistant thin film capacitor with interdigitated structure - Google Patents

Breakdown-resistant thin film capacitor with interdigitated structure Download PDF

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Publication number
US6999297B1
US6999297B1 US09/483,923 US48392300A US6999297B1 US 6999297 B1 US6999297 B1 US 6999297B1 US 48392300 A US48392300 A US 48392300A US 6999297 B1 US6999297 B1 US 6999297B1
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United States
Prior art keywords
dielectric
thin film
interdigitated
film capacitor
interdigitated electrode
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Expired - Fee Related
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US09/483,923
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English (en)
Inventor
Mareike Klee
Wilhelm Herrmann
Uwe Mackens
Paulus H. M. Keizer
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NXP BV
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US Philips Corp
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Assigned to U.S. PHILIPS CORPORATION reassignment U.S. PHILIPS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KEIZER, PAUL H.M., MACKENS, UWE, HERRMANN, WILHELM, KLEE, MAREIKE K.
Assigned to U.S. PHILIPS CORPORATION reassignment U.S. PHILIPS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KEIZER, PAULUS H.M., MACKENS, UWE, HERRMANN, WILHELM, KLEE, MAREIKE
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Assigned to NXP B.V. reassignment NXP B.V. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: U.S. PHILIPS CORPORATION
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes

Definitions

  • the invention relates to a thin film capacitor which comprises a carrier substrate, at least two interdigitated electrodes, and at least one dielectric.
  • Dielectric materials with high dielectric constant values are used for achieving high capacitance values in capacitors of small dimensions.
  • Dielectrics with ⁇ r >50 at dielectric thicknesses of 50 nm to 2 ⁇ m are made by means of thin film processes in the manufacture of of thin film capacitors.
  • An inexpensive method which is used for depositing thin layers with ⁇ r >50 is a wet chemical thin film method such as, for example, the sol-gel method.
  • the lower electrode in a thin film capacitor is made of a non-noble metal such as, for example, aluminum or copper, or a noble metal, for example silver, a silver alloy, or platinum.
  • noble metals such as, for example, platinum, silver, silver alloys, or NiCr/gold are used, as for the lower electrode, or alternatively non-noble metals such as, for example, aluminum, nickel, or copper.
  • non-noble metals such as, for example, aluminum, nickel, or copper.
  • the electrodes are structured by means of lithographical processes in combination with wet or dry etching steps.
  • Suitable carrier substrate materials are Si wafers, glass or ceramic materials.
  • a protective layer is used for protecting the capacitor construction, for example an organic layer and/or an inorganic layer provided in a printing process or a thin film process.
  • the capacitors are further provided with current supply contacts, either individually or in rows.
  • a higher breakdown resistance is found in so-called interdigitated capacitors whose electrodes have a finger-like arrangement.
  • the finger shapes of these interdigitated electrodes and their interlocking arrangement together with the superimposed dielectric form the actual capacitor.
  • the capacitance value of such an arrangement is a function of the finger interspacing, the length of the overlaps, the thickness of the dielectric, the dielectric constant values of the substrate and of the dielectric, and the thickness of the electrodes.
  • the finger interspacing in fact determines the breakdown resistance and the resulting admissible operating voltage of the capacitor type.
  • a capacitor arrangement with interdigitated electrodes is known from publication no. 07283076 A from “Patent Abstracts of Japan”, wherein several interdigitated electrode layers are present one above the other so as to enhance the capacitance value still further.
  • the interdigitated electrodes of a capacitor unit all lie in one plane, and a dielectric is present between every two adjoining electrode levels.
  • a disadvantage of the arrangement of the electrodes in one plane is that the full thickness of the dielectric is not utilized for contributing to the capacitance of the capacitor.
  • the invention has for its object to develop an improved thin film capacitor with interdigitated electrodes and a high breakdown resistance.
  • a thin film capacitor comprising a carrier substrate, at least two interdigitated electrodes, and at least one dielectric, which is characterized in that at least one interdigitated electrode is arranged below the dielectric and at least one interdigitated electrode is arranged above the dielectric.
  • the layers of the dielectric contribute to the capacitance behavior of the capacitor when the interdigitated electrodes are positioned above and below the dielectric.
  • a preferred embodiment provides that the interdigitated electrode above the dielectric is positioned staggered with respect to the interdigitated electrode below the dielectric.
  • the staggered arrangement achieves that the dielectric is permeated more evenly by the electric field, and accordingly higher capacitance values can be attained, all other parameters remaining the same.
  • a further preferred embodiment is characterized in that the dielectric comprises a plurality of layers.
  • the dielectric comprises a ferroelectric ceramic material.
  • Ferroelectric ceramic materials have a high relative dielectric constant ⁇ r annnd allow for high capacitance values in small dimensions.
  • a barrier layer is provided on the carrier substrate.
  • Reactions with the dielectric or short-circuits can be avoided by means of a barrier layer in the case of substrates having a rough surface, for example Al 2 O 3 .
  • FIG. 1 is a diagram of the construction of a thin film capacitor with two interdigitated electrodes
  • FIG. 2 is a diagram of the construction of a thin film capacitor with three interdigitated electrodes.
  • a thin film capacitor comprises a carrier substrate 1 which is made, for example, from a ceramic material, a glass-ceramic material, a glass material, or silicon.
  • a barrier layer for example made from SiO 2 , TiO 2 , Al 2 O 3 or ZrO 2 , is provided on the carrier substrate 1 .
  • a first interdigitated electrode 4 which comprises, for example, Al,
  • the dielectric 3 may comprise multiple layers, for example double, triple, or quadruple layers.
  • a multiple layer structure may be implemented with three or more interdigitated electrodes in staggered arrangement.
  • FIG. 2 shows such a multiple layer arrangement with three staggered interdigitated electrodes 41 , 42 , and 51 , and two dielectrics 31 and 32 .
  • a first dielectric 31 is disposed over a first interdigitated electrode 41 , over this a second interdigitated electrode 51 covered by a second dielectric layer 32 , and a third interdigitated electrode 42 .
  • the first interdigitated electrode 41 and the third interdigitated electrode 42 are connected in parallel.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • a carrier substrate 1 of glass is provided with a barrier layer 2 of TiO 2 .
  • a lower interdigitated electrode 4 of Ti/Pt is provided on this barrier layer 2 .
  • a dielectric 3 of BaTiO 3 is disposed over the lower interdigitated electrode 4 .
  • An upper interdigitated electrode 5 of Pt is provided on said dielectric 3 .
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • a carrier substrate 1 of glass is provided with a barrier layer 2 of TiO 2 .
  • a lower interdigitated electrode 4 of Ti/Pt is provided on this barrier layer 2 .
  • a dielectric 3 of Pb(Zr 0.53 T 0.47 )O 3 doped with lanthanum is disposed over the lower interdigitated electrode 4 .
  • An upper interdigitated electrode 5 of Pt is provided on said dielectric 3 .
  • Table 3 shows the average capacitance values C and the operating voltages U rated for thin film capacitors with interdigitated electrodes (parameters in accordance with Table 2) and a lanthanum-doped PZT dielectric (layer thicknesses in accordance with Table 1).

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
US09/483,923 1999-01-20 2000-01-18 Breakdown-resistant thin film capacitor with interdigitated structure Expired - Fee Related US6999297B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19902029A DE19902029A1 (de) 1999-01-20 1999-01-20 Spannungsfester Dünnschichtkondensator mit Interdigitalstruktur

Publications (1)

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US6999297B1 true US6999297B1 (en) 2006-02-14

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US (1) US6999297B1 (de)
EP (1) EP1022768A3 (de)
JP (1) JP2000216052A (de)
DE (1) DE19902029A1 (de)

Cited By (35)

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US20070109716A1 (en) * 2005-11-14 2007-05-17 James Martin High Q and low stress capacitor electrode array
US20080032424A1 (en) * 2006-08-03 2008-02-07 Micron Technology, Inc. ALD of Zr-substituted BaTiO3 films as gate dielectrics
US20080203383A1 (en) * 2005-04-15 2008-08-28 Polyic Gmbh & Co. Kg Multi-Layer Composite Body Having an Electronic Function
US20110014886A1 (en) * 2007-04-23 2011-01-20 Paratek Microwave, Inc. Techniques for improved adaptive impedance matching
US20110063042A1 (en) * 2000-07-20 2011-03-17 Paratek Microwave, Inc. Tunable microwave devices with auto-adjusting matching circuit
CN102832195A (zh) * 2012-08-27 2012-12-19 集美大学 三维电容结构
US20130342953A1 (en) * 2012-06-20 2013-12-26 University Of Dayton High voltage non-coplanar interdigitated varactor
US8674783B2 (en) 2008-09-24 2014-03-18 Blackberry Limited Methods for tuning an adaptive impedance matching network with a look-up table
USRE44998E1 (en) 2000-07-20 2014-07-08 Blackberry Limited Optimized thin film capacitors
US8781417B2 (en) 2007-05-07 2014-07-15 Blackberry Limited Hybrid techniques for antenna retuning utilizing transmit and receive power information
US8787845B2 (en) 2009-08-25 2014-07-22 Blackberry Limited Method and apparatus for calibrating a communication device
US20140210050A1 (en) * 2013-01-31 2014-07-31 Samsung Display Co., Ltd. Method of manufacturing capacitor and display apparatus including the same
US8942657B2 (en) 2006-01-14 2015-01-27 Blackberry Limited Adaptive matching network
US9130543B2 (en) 2006-11-08 2015-09-08 Blackberry Limited Method and apparatus for adaptive impedance matching
US9231643B2 (en) 2011-02-18 2016-01-05 Blackberry Limited Method and apparatus for radio antenna frequency tuning
US9263806B2 (en) 2010-11-08 2016-02-16 Blackberry Limited Method and apparatus for tuning antennas in a communication device
US9406444B2 (en) 2005-11-14 2016-08-02 Blackberry Limited Thin film capacitors
US9419581B2 (en) 2006-11-08 2016-08-16 Blackberry Limited Adaptive impedance matching apparatus, system and method with improved dynamic range
US9450637B2 (en) 2010-04-20 2016-09-20 Blackberry Limited Method and apparatus for managing interference in a communication device
US20160293334A1 (en) * 2015-03-31 2016-10-06 Tdk Corporation Thin film capacitor
US9473216B2 (en) 2011-02-25 2016-10-18 Blackberry Limited Method and apparatus for tuning a communication device
US9548716B2 (en) 2010-03-22 2017-01-17 Blackberry Limited Method and apparatus for adapting a variable impedance network
US20170047276A1 (en) * 2015-08-13 2017-02-16 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US9671765B2 (en) 2012-06-01 2017-06-06 Blackberry Limited Methods and apparatus for tuning circuit components of a communication device
US9716311B2 (en) 2011-05-16 2017-07-25 Blackberry Limited Method and apparatus for tuning a communication device
US9768810B2 (en) 2012-12-21 2017-09-19 Blackberry Limited Method and apparatus for adjusting the timing of radio antenna tuning
US9769826B2 (en) 2011-08-05 2017-09-19 Blackberry Limited Method and apparatus for band tuning in a communication device
US9941910B2 (en) 2012-07-19 2018-04-10 Blackberry Limited Method and apparatus for antenna tuning and power consumption management in a communication device
US10003393B2 (en) 2014-12-16 2018-06-19 Blackberry Limited Method and apparatus for antenna selection
USRE47412E1 (en) 2007-11-14 2019-05-28 Blackberry Limited Tuning matching circuits for transmitter and receiver bands as a function of the transmitter metrics
US10404295B2 (en) 2012-12-21 2019-09-03 Blackberry Limited Method and apparatus for adjusting the timing of radio antenna tuning
US10659088B2 (en) 2009-10-10 2020-05-19 Nxp Usa, Inc. Method and apparatus for managing operations of a communication device
US10686031B2 (en) 2018-03-27 2020-06-16 Qualcomm Incorporated Finger metal-oxide-metal (FMOM) capacitor
US10903015B2 (en) * 2016-12-02 2021-01-26 Carver Scientific, Inc. Capacitive energy storage device
CN114823139A (zh) * 2022-04-29 2022-07-29 厦门松元电子股份有限公司 一种抗雷击波的高耐压陶瓷介质材料、陶瓷电容器及其制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002075780A2 (en) * 2001-03-21 2002-09-26 Koninklijke Philips Electronics N.V. Electronic device having dielectric material of high dielectric constant

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US3596370A (en) * 1969-12-11 1971-08-03 Gen Electric Thin film capacitor
US4410867A (en) * 1978-12-28 1983-10-18 Western Electric Company, Inc. Alpha tantalum thin film circuit device
US4453199A (en) * 1983-06-17 1984-06-05 Avx Corporation Low cost thin film capacitor
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JPH07283076A (ja) 1994-04-15 1995-10-27 Nippon Telegr & Teleph Corp <Ntt> キャパシタ

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JPH07202123A (ja) * 1993-12-28 1995-08-04 Nec Corp 半導体結合コンデンサ
DE19630883A1 (de) * 1996-07-31 1998-02-05 Philips Patentverwaltung Bauteil mit einem Kondensator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3596370A (en) * 1969-12-11 1971-08-03 Gen Electric Thin film capacitor
US4410867A (en) * 1978-12-28 1983-10-18 Western Electric Company, Inc. Alpha tantalum thin film circuit device
US4453199A (en) * 1983-06-17 1984-06-05 Avx Corporation Low cost thin film capacitor
US5122923A (en) * 1989-08-30 1992-06-16 Nec Corporation Thin-film capacitors and process for manufacturing the same
JPH07283076A (ja) 1994-04-15 1995-10-27 Nippon Telegr & Teleph Corp <Ntt> キャパシタ

Cited By (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8896391B2 (en) 2000-07-20 2014-11-25 Blackberry Limited Tunable microwave devices with auto-adjusting matching circuit
US9768752B2 (en) 2000-07-20 2017-09-19 Blackberry Limited Tunable microwave devices with auto-adjusting matching circuit
US8744384B2 (en) 2000-07-20 2014-06-03 Blackberry Limited Tunable microwave devices with auto-adjusting matching circuit
USRE44998E1 (en) 2000-07-20 2014-07-08 Blackberry Limited Optimized thin film capacitors
US9948270B2 (en) 2000-07-20 2018-04-17 Blackberry Limited Tunable microwave devices with auto-adjusting matching circuit
US8693963B2 (en) 2000-07-20 2014-04-08 Blackberry Limited Tunable microwave devices with auto-adjusting matching circuit
US20110063042A1 (en) * 2000-07-20 2011-03-17 Paratek Microwave, Inc. Tunable microwave devices with auto-adjusting matching circuit
US9431990B2 (en) 2000-07-20 2016-08-30 Blackberry Limited Tunable microwave devices with auto-adjusting matching circuit
KR101244124B1 (ko) 2005-04-15 2013-03-14 폴리아이씨 게엠베하 운트 코. 카게 전자 기능을 구비한 다층 복합체
US20080203383A1 (en) * 2005-04-15 2008-08-28 Polyic Gmbh & Co. Kg Multi-Layer Composite Body Having an Electronic Function
US7812343B2 (en) * 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US9406444B2 (en) 2005-11-14 2016-08-02 Blackberry Limited Thin film capacitors
US10163574B2 (en) 2005-11-14 2018-12-25 Blackberry Limited Thin films capacitors
US7869186B2 (en) * 2005-11-14 2011-01-11 Paratek Microwave, Inc. High Q and low stress capacitor electrode array
US20070109716A1 (en) * 2005-11-14 2007-05-17 James Martin High Q and low stress capacitor electrode array
US8942657B2 (en) 2006-01-14 2015-01-27 Blackberry Limited Adaptive matching network
US9853622B2 (en) 2006-01-14 2017-12-26 Blackberry Limited Adaptive matching network
US10177731B2 (en) 2006-01-14 2019-01-08 Blackberry Limited Adaptive matching network
US20080032424A1 (en) * 2006-08-03 2008-02-07 Micron Technology, Inc. ALD of Zr-substituted BaTiO3 films as gate dielectrics
US7985995B2 (en) * 2006-08-03 2011-07-26 Micron Technology, Inc. Zr-substituted BaTiO3 films
US8323988B2 (en) 2006-08-03 2012-12-04 Micron Technology, Inc. Zr-substituted BaTiO3 films
US8772050B2 (en) 2006-08-03 2014-07-08 Micron Technology, Inc. Zr-substituted BaTiO3 films
US10020828B2 (en) 2006-11-08 2018-07-10 Blackberry Limited Adaptive impedance matching apparatus, system and method with improved dynamic range
US10050598B2 (en) 2006-11-08 2018-08-14 Blackberry Limited Method and apparatus for adaptive impedance matching
US9722577B2 (en) 2006-11-08 2017-08-01 Blackberry Limited Method and apparatus for adaptive impedance matching
US9130543B2 (en) 2006-11-08 2015-09-08 Blackberry Limited Method and apparatus for adaptive impedance matching
US9419581B2 (en) 2006-11-08 2016-08-16 Blackberry Limited Adaptive impedance matching apparatus, system and method with improved dynamic range
US8620236B2 (en) 2007-04-23 2013-12-31 Blackberry Limited Techniques for improved adaptive impedance matching
US9698748B2 (en) 2007-04-23 2017-07-04 Blackberry Limited Adaptive impedance matching
US20110014886A1 (en) * 2007-04-23 2011-01-20 Paratek Microwave, Inc. Techniques for improved adaptive impedance matching
US8781417B2 (en) 2007-05-07 2014-07-15 Blackberry Limited Hybrid techniques for antenna retuning utilizing transmit and receive power information
US9119152B2 (en) 2007-05-07 2015-08-25 Blackberry Limited Hybrid techniques for antenna retuning utilizing transmit and receive power information
USRE48435E1 (en) 2007-11-14 2021-02-09 Nxp Usa, Inc. Tuning matching circuits for transmitter and receiver bands as a function of the transmitter metrics
USRE47412E1 (en) 2007-11-14 2019-05-28 Blackberry Limited Tuning matching circuits for transmitter and receiver bands as a function of the transmitter metrics
US9698758B2 (en) 2008-09-24 2017-07-04 Blackberry Limited Methods for tuning an adaptive impedance matching network with a look-up table
US8957742B2 (en) 2008-09-24 2015-02-17 Blackberry Limited Methods for tuning an adaptive impedance matching network with a look-up table
US8674783B2 (en) 2008-09-24 2014-03-18 Blackberry Limited Methods for tuning an adaptive impedance matching network with a look-up table
US8787845B2 (en) 2009-08-25 2014-07-22 Blackberry Limited Method and apparatus for calibrating a communication device
US9020446B2 (en) 2009-08-25 2015-04-28 Blackberry Limited Method and apparatus for calibrating a communication device
US10659088B2 (en) 2009-10-10 2020-05-19 Nxp Usa, Inc. Method and apparatus for managing operations of a communication device
US10615769B2 (en) 2010-03-22 2020-04-07 Blackberry Limited Method and apparatus for adapting a variable impedance network
US9608591B2 (en) 2010-03-22 2017-03-28 Blackberry Limited Method and apparatus for adapting a variable impedance network
US10263595B2 (en) 2010-03-22 2019-04-16 Blackberry Limited Method and apparatus for adapting a variable impedance network
US9548716B2 (en) 2010-03-22 2017-01-17 Blackberry Limited Method and apparatus for adapting a variable impedance network
US9742375B2 (en) 2010-03-22 2017-08-22 Blackberry Limited Method and apparatus for adapting a variable impedance network
US9941922B2 (en) 2010-04-20 2018-04-10 Blackberry Limited Method and apparatus for managing interference in a communication device
US9450637B2 (en) 2010-04-20 2016-09-20 Blackberry Limited Method and apparatus for managing interference in a communication device
US9263806B2 (en) 2010-11-08 2016-02-16 Blackberry Limited Method and apparatus for tuning antennas in a communication device
US10979095B2 (en) 2011-02-18 2021-04-13 Nxp Usa, Inc. Method and apparatus for radio antenna frequency tuning
US9698858B2 (en) 2011-02-18 2017-07-04 Blackberry Limited Method and apparatus for radio antenna frequency tuning
US9935674B2 (en) 2011-02-18 2018-04-03 Blackberry Limited Method and apparatus for radio antenna frequency tuning
US9231643B2 (en) 2011-02-18 2016-01-05 Blackberry Limited Method and apparatus for radio antenna frequency tuning
US9473216B2 (en) 2011-02-25 2016-10-18 Blackberry Limited Method and apparatus for tuning a communication device
US10218070B2 (en) 2011-05-16 2019-02-26 Blackberry Limited Method and apparatus for tuning a communication device
US9716311B2 (en) 2011-05-16 2017-07-25 Blackberry Limited Method and apparatus for tuning a communication device
US9769826B2 (en) 2011-08-05 2017-09-19 Blackberry Limited Method and apparatus for band tuning in a communication device
US10624091B2 (en) 2011-08-05 2020-04-14 Blackberry Limited Method and apparatus for band tuning in a communication device
US9671765B2 (en) 2012-06-01 2017-06-06 Blackberry Limited Methods and apparatus for tuning circuit components of a communication device
US20130342953A1 (en) * 2012-06-20 2013-12-26 University Of Dayton High voltage non-coplanar interdigitated varactor
US9941910B2 (en) 2012-07-19 2018-04-10 Blackberry Limited Method and apparatus for antenna tuning and power consumption management in a communication device
CN102832195A (zh) * 2012-08-27 2012-12-19 集美大学 三维电容结构
US10404295B2 (en) 2012-12-21 2019-09-03 Blackberry Limited Method and apparatus for adjusting the timing of radio antenna tuning
US9768810B2 (en) 2012-12-21 2017-09-19 Blackberry Limited Method and apparatus for adjusting the timing of radio antenna tuning
US10700719B2 (en) 2012-12-21 2020-06-30 Nxp Usa, Inc. Method and apparatus for adjusting the timing of radio antenna tuning
US20140210050A1 (en) * 2013-01-31 2014-07-31 Samsung Display Co., Ltd. Method of manufacturing capacitor and display apparatus including the same
US9293522B2 (en) * 2013-01-31 2016-03-22 Samsung Display Co., Ltd. Method of manufacturing capacitor and display apparatus including the same
US10003393B2 (en) 2014-12-16 2018-06-19 Blackberry Limited Method and apparatus for antenna selection
US10651918B2 (en) 2014-12-16 2020-05-12 Nxp Usa, Inc. Method and apparatus for antenna selection
US20160293334A1 (en) * 2015-03-31 2016-10-06 Tdk Corporation Thin film capacitor
US20170047276A1 (en) * 2015-08-13 2017-02-16 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US10903015B2 (en) * 2016-12-02 2021-01-26 Carver Scientific, Inc. Capacitive energy storage device
US10686031B2 (en) 2018-03-27 2020-06-16 Qualcomm Incorporated Finger metal-oxide-metal (FMOM) capacitor
CN114823139A (zh) * 2022-04-29 2022-07-29 厦门松元电子股份有限公司 一种抗雷击波的高耐压陶瓷介质材料、陶瓷电容器及其制备方法
CN114823139B (zh) * 2022-04-29 2024-01-30 厦门松元电子股份有限公司 一种抗雷击波的高耐压陶瓷介质材料、陶瓷电容器及其制备方法

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JP2000216052A (ja) 2000-08-04
EP1022768A2 (de) 2000-07-26
DE19902029A1 (de) 2000-07-27
EP1022768A3 (de) 2004-05-06

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