US6041245A - High power superconductive circuits and method of construction thereof - Google Patents

High power superconductive circuits and method of construction thereof Download PDF

Info

Publication number
US6041245A
US6041245A US08/577,156 US57715695A US6041245A US 6041245 A US6041245 A US 6041245A US 57715695 A US57715695 A US 57715695A US 6041245 A US6041245 A US 6041245A
Authority
US
United States
Prior art keywords
high temperature
circuit
temperature superconductive
film
current density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US08/577,156
Other languages
English (en)
Inventor
Raafat R. Mansour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Com Dev Ltd
Original Assignee
Com Dev Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Com Dev Ltd filed Critical Com Dev Ltd
Assigned to COM DEV LTD. reassignment COM DEV LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MANSOUR, RAAFAT R.
Application granted granted Critical
Publication of US6041245A publication Critical patent/US6041245A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H01P3/081—Microstriplines
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/866—Wave transmission line, network, waveguide, or microwave storage device

Definitions

  • This invention relates to high power high temperature superconductive microwave circuits for various microwave devices and to a method of enhancing the power capability of such circuits.
  • High temperature superconductive (HTS) microwave devices enhance system performance with respect to noise figure, loss, mass and size compared to non-HTS devices. It is known to use HTS technology to design microwave components with superior performance (See Z. Y. Shen, "High Temperature Superconducting Microwave Circuits", Artech House Inc., Norwood, Mass., 1994; R. R. Mansour, “Design of Superconductive Multiplexers Using Single-Mode and Dual-Mode Filters", IEEE Trans. Microwave Theory Tech., Vol. MTT-42, pp. 1411-1418, July, 1994; Talisa, et al., “Low and High Temperature Superconductive Microwave Filters", IEEE Trans. Microwave Theory Tech., Vol. MTT-39, pp.
  • Typical microwave systems include high power as well as low power components but previous devices have concentrated on low power applications. Significant performance and economic benefits can be derived from the availability of both low power and high power HTS components.
  • HTS thin films For high power applications, the behavior of HTS thin films is quite different from that for low power applications. For example, surface resistance degradation and non-linearity have been observed in HTS microwave films operating at modest microwave power levels (See Fathy, et al., "Critical Design Issues in Implementing a YBCO Superconductor X-Band Narrow Bandpass Filter Operating at 77 K", IEEE, MTT-S Symp. Digest, pp. 1329-1332, 1991). The degradation and superconductive performances caused by the increased current density in the films as the power level is increased. When the current density reaches a maximum level, the power handling capability is limited to the power input at that level.
  • an HTS microwave device for example, an HTS filter
  • HTS filter the ability of an HTS microwave device, for example, an HTS filter, to handle high power levels is not only governed by the quality of the HTS materials but also by the filter geometry and its electrical characteristics. As better HTS materials are developed, the power handling capabilities of microwave components will increase.
  • a high temperature superconductive circuit for use with microwave devices has high power handling capability.
  • the circuit has a substrate and a high temperature superconductive film on the substrate.
  • the means to reduce current density extends over part of the circuit leaving at least a substantial portion of the superconductive film exposed.
  • the circuit has an input and output.
  • Superconductive film and the means to reduce current density are configured to be in direct contact so that current can flow through the circuit between the input and output when a signal is applied to the input.
  • a high temperature superconductive circuit for use with microwave devices has high power handling capability.
  • the circuit has high temperature superconductive film on a substrate.
  • Part of the circuit has means to reduce current density in some of the high temperature superconductive film below a current density that would otherwise exist in operation of the device when the part is comprised of high temperature superconductive film without means to reduce current density.
  • the part and the high temperature superconductive film at least partially overlap and the circuit has an input and output.
  • the part and the high temperature superconductive film are configured to be in direct contact so that current can flow through the circuit between the input and output when a signal is applied to the input.
  • a method of enhancing the power capability of a high temperature superconductive circuit for use with microwave devices comprising depositing a high temperature superconductive film on a substrate to form at least a portion of a microwave circuit, depositing means to reduce current density on specific areas of the high temperature superconductive film so that the means to reduce current density is in direct contact with the high temperature superconductive film to allow current to flow through the circuit between an input and an output when a signal is applied to the input, depositing the means to reduce current density in the specific areas of the circuit where the current density would otherwise be significantly higher than a remainder of the circuit where means to reduce current density has not been deposited.
  • a method of enhancing the power capability of a high temperature superconductive circuit for use with microwave devices comprising depositing a high temperature superconductive film on a substrate to form at least a portion of a microwave circuit, depositing a plurality of dielectric films of different dielectric constants on top of at least some of the high temperature superconductive film to form means to reduce the current density in some of the high temperature superconductive film, the means to reduce the current density and the high temperature superconductive film being directly in contact so that current can flow through the circuit between an input and an output when a signal is applied to said input.
  • a method of enhancing the power capability of a high temperature superconductive circuit for use with microwave devices comprising depositing a high temperature superconductive film on a substrate to form at least a portion of a microwave circuit, depositing a constant gradient substrate on top of at least some of the high temperature superconductive film to form means to reduce the current density in some of the superconductive film, said means to reduce the current density and the high temperature superconductive film being directly in contact so that current can flow through the circuit between an input and an output when a signal is applied to the input.
  • FIG. 1 is a perspective view of a prior art high temperature superconductive microstrip line
  • FIG. 2 is a graph showing the current distribution on the microstrip line of FIG. 1;
  • FIG. 3 is a perspective view of a high power high temperature superconductive microstrip line in accordance with the present invention.
  • FIG. 4 is a perspective view of a further embodiment of a high power high temperature superconductive microstrip line
  • FIG. 5 is a graph comparing the current distribution of the prior art microstrip line of FIG. 1 and the high power microstrip line of FIG. 4;
  • FIG. 6 is a schematic top view of a prior art dual mode high temperature superconductive filter
  • FIG. 7 is a schematic top view with a legend showing the current distribution on the prior art filter of FIG. 6;
  • FIG. 8 is a top schematic view of a high power high temperature superconductive filter where part of a circuit of the filter is made from gold films;
  • FIG. 9 is a schematic top view of a filter having gold films deposited on a substrate on part of a circuit
  • FIG. 10 is a top view of a circuit for a prior art hairpin high temperature superconductive filter
  • FIG. 11A is a graph showing the current distribution on a first and second resonator element of the filter of FIG. 10;
  • FIG. 11B is a graph showing the current distribution on a third and fourth resonator of the filter shown in FIG. 10;
  • FIG. 12 is a top view of a circuit for a high power interdigital filter where one of the resonators is made from a gold film;
  • FIG. 13 is a top view of a prior art hybrid dielectric/high temperature superconductive resonator
  • FIG. 14 is a perspective view of an enlarged prior art image-plate used in the resonator shown in FIG. 13;
  • FIG. 15 is a perspective view of an annular resonator in accordance with the present invention.
  • FIG. 16 is a further embodiment of an circular resonator having circles of different dielectric constants.
  • FIG. 17 is a perspective view of a further embodiment of a high power high temperature superconductive microstrip line
  • FIG. 18 is a top schematic view of a high power high temperature superconductive filter where part of a circuit of the filter is made from gold film deposited partially on a substrate and partially on a high temperature superconductive film;
  • FIG. 19 is a top schematic view of a high power high temperature superconductive filter where part of a circuit of the filter is made from gold film deposited on a substrate and located adjacent to high temperature superconductive film deposited on the substrate.
  • HTS high temperature superconductive
  • FIG. 1 there is shown a high temperature superconductive (henceforth referred to as HTS) microstrip line 2 having an HTS film 4 with a width W located on a substrate 6.
  • Beneath the substrate 6 is a ground plane 8.
  • the ground plane can be made out of HTS film or a metal.
  • HTS film is made from ceramic material e.g. ceramic oxide superconductor.
  • FIG. 2 there is shown a graph of a typical distribution of current density over the line width W of the HTS film 4 of the microstrip line 2 in FIG. 1. It can be seen that the current density is lowest at a center (0) of the HTS film 4 and highest at the outer edges (-W/2, +W/2. In high power applications, the current density at the edges may exceed the critical current density of the superconductive material. If the current density at the edges does exceed the critical current density of the superconductive material, the edges of the film will lose their superconductive characteristics.
  • a microstrip line 10 has an HTS film 4 with a width W.
  • the film 4 is located on a substrate 6 with a ground plane 8 being located beneath the substrate.
  • the HTS film has two outer edges 12.
  • Gold films 14 extend the power handling capability of the microstrip line 10 by reducing the current density in those areas where the gold films are located by providing paths for the current even if the edges 12 of the film 4 are no longer in the superconductive state.
  • a microstrip line 16 has a plurality of dielectric films 18 deposited on top of the HTS film 4.
  • the dielectric films 18 have different dielectric constants E r1 , Er 2 , E r3 . . . E rn to reduce the current density that would otherwise exist in the HTS film 4 if the dielectric films 18 were not present.
  • the film 4 has outer edges 12.
  • FIG. 5 there is shown a graph of the current density distribution across the HTS film 4 for the prior art microstrip line 2 shown in FIG. 1 and the microstrip line 16 shown in FIG. 4.
  • 0 represents a longitudinal center of the HTS film
  • -W represents one side of said HTS film
  • +W represents an opposite side of said HTS film.
  • FIG. 6 there is shown a top view of a circuit 20 for a prior art dual mode filter 22.
  • the circuit 20 is made from HTS films that are deposited on a substrate 24.
  • the filter 22 has an input coupling 26 and an output coupling 28 with two patches or resonators 30, 32. Coupling between the patches is provided by coupling elements 34, 36.
  • the substrate 24 can be made from any dielectric material.
  • Resonators 30, 32 each have outer edges 38, 39, 40 as well as a center area 42.
  • FIG. 7 shows the current distribution in the prior art circuit 20 of the filter 22. It can be seen that the coupling element 34 and the input and output couplings 26, 28 are areas of relatively high current density.
  • outer edges 38, 40 of each of the resonators 30, 32 adjacent to the input coupling 26 or output coupling 28 and the coupling element 36 are also areas of relatively high current density. Still further, it can be seen that a center area 42 of each of the resonators 30, 32 is also an area of relatively high current density.
  • FIG. 8 there is shown a schematic top view of a circuit 44 of a filter 46 that is virtually identical to the filter 22 shown in FIG. 6 except that the cross-hatched areas of the filter 46 have a thin film of gold that has been deposited on top of parts of the HTS film of the circuit 20 of the filter 22 as seen in FIG. 6. More specifically, the gold film is deposited on input and output couplings 48, 50 on coupling element 52, on the outer edges 38, 40 and in the central area 42 of the resonators 54, 56. The purpose of the gold film is to reduce the current density in those areas compared to the current density that would occur in those same areas of the prior art filter 22, thereby increasing the power handling capability of the filter 46 relative to the prior art filter 22. The same reference numerals have been used for those components of the filter 46 that are identical to the filter 22.
  • FIG. 9 there is shown a further embodiment of the invention in which a schematic top view of a circuit 60 of a filter 62 has gold films deposited on the substrate 24 in certain areas in place of the HTS films of the prior art filter 22 shown in FIG. 6.
  • the same reference numerals are used for those components that are the same as those shown for the filter 22 of FIG. 6.
  • the areas where the gold film has been deposited directly on the substrate 24 are shown with wide cross-hatching. These areas are input coupling 64, output coupling 66 and coupling element 68 extending between the resonators 30, 32.
  • the use of the gold films for the components 64, 66, 68 reduces the current density in those components relative to the current density in the corresponding components in the prior art filter 22 at the same power level and thereby enhance the power handling capability of the filter 62 relative to the prior art filter 22. Since the resonators 30, 32 of the filter 62 are made from HTS film, the use of gold films for the components 64, 66, 68 causes only a minor degradation in the filter insertion loss performance vis-a-vis the prior art filter 22. In a further variation of the invention (not shown), the components 64, 66, 68 could have an HTS film deposited directly onto the substrate 24 with a gold film deposited on top of the HTS film for these three components only.
  • FIG. 10 there is shown a top view of a circuit 70 of a four pole HTS hairpin filter 72 in which HTS film is deposited on a substrate 74.
  • the filter 72 has four resonator elements 76, 78, 80, 82 with input line 84 and output line 86 deposited on a substrate 88.
  • FIG. 11A the current distribution for the first and second resonators 76 and 78 is, respectively, shown.
  • FIG. 11B the current distribution for the third and fourth resonators 80 and 82, respectively, is shown. It can be seen that the current flowing on the second resonator 78 is higher than the current flowing on any of the remaining resonators 76, 80, 82.
  • FIG. 12 there is shown a circuit 90 of a filter 92 which differs from the filter 72 because a second resonator 94 is a gold film resonator used in place of the second resonator 78 of the filter 72.
  • the resonator 94 of the filter 92 could consist of a thin gold film deposited on top of the HTS film which is deposited directly onto the substrate 74.
  • the four resonator elements 76, 94, 80, 82 have an input line 84 and an output line 86 deposited on a substrate 88.
  • thin gold films could be used to be deposited directly onto the substrate or to be deposited onto the HTS film, which is deposited directly onto the substrate.
  • the filter 92 could be manufactured by depositing a plurality of dielectric films on the HTS films with the objective of redistributing the current over the filter and reducing the current density. Dielectric films will also impact the RF performance of the filter. Therefore, the impact of these films on performance must be taken into account during the design process.
  • FIG. 13 there is shown a prior art hybrid dielectric/HTS resonator 96 having a dielectric resonator 98 mounted on an image plate 100 within a housing 102. RF energy is fed into a cavity 104 within the housing 102 through input probe 106.
  • An enlarged perspective view of the prior art image plate 100 is shown in FIG. 14. It can be seen that the image plate has an HTS film 108 printed on a substrate 110, which can be made out of any dielectric material.
  • the power handling capability of the resonator 96 can be increased by depositing gold film at certain locations on the resonator where the current density is high.
  • FIG. 15 there is shown a perspective view of a resonator 112 which is a variation of the resonator 100 of FIG. 13.
  • the same reference numerals are used in FIG. 15 for those components that are the same as those of the resonator 100 shown in FIG. 14.
  • the resonator 112 has an annular-shaped thin gold film deposited onto a central area 116 of the HTS film 108.
  • the HTS film 108 is deposited on the substrate 110.
  • the thin gold film 114 can be deposited directly onto the substrate 110 or partially on the HTS film and partially directly onto the substrate or, still further, the HTS film can be located adjacent to said part where both are deposited directly onto the substrate.
  • the thin gold film can be located partially on the high temperature superconductive film and partially on the substrate or the superconductive film and the thin gold film can be located adjacent to one another where there is no overlap between them.
  • FIG. 16 in a further variation of the resonator 100, there is shown a perspective view of a resonator 118 in which a plurality of roundly shaped dielectric films 120, 122, 124, 126 of different dielectric constants E r1 , E r2 , . . . E rn are deposited on top of the HTS film 108.
  • the HTS film 108 is in turn deposited on the substrate 110.
  • the shape of the dielectric films and the values of the dielectric constants depend on the type of resonating mode.
  • FIG. 17 there is shown a perspective view of a microstrip line 128 which is a still further variation of the prior art microstrip line 2 shown in FIG. 1.
  • the same reference numerals are used as those used in FIG. 1 for those components that are the same.
  • a dielectric constant gradient substrate 130 is mounted on top of the HTS film 4.
  • the substrate 130 has a plurality of dielectric constant materials 132, 134, 136, 138, 140 having different dielectric constants E r1 , Er r2 , E r3 , E r4 . . . E rn respectively.
  • Overlying the dielectric constant materials 132, 134, 136, 138, 140 is an optional ground plane 142.
  • the dielectric constant gradient substrate 130 redistributes the current density over the HTS film 4.
  • FIG. 18 shows the filter of FIG. 8.
  • the same reference numerals are used for FIG. 18 for those components that are identical to those of FIG. 8.
  • Part 146 of the gold film 38 is deposited on HTS film 148 and part 150 of the gold film 38 is deposited directly on the substrate.
  • the same reference numerals are used for those components that are identical to those of FIG. 8. From the legend, it can be seen that the gold film is deposited directly on the substrate and, for the resonators 54, 56, the gold film is located adjacent to high temperature superconductive film 152. There is no overlap between the part of the resonators that contains the gold film and the portion that contains the HTS film.
  • the means to reduce current density can be located partially on the high temperature superconductive film and partially on the substrate.
  • the means to reduce current density and the HTS film can be located adjacent to one another where there is no overlap between the means to reduce current density and the HTS film.
  • the present invention can be used with planar structures other than microstrip structures such as coplanar lines, strip lines and suspended microstrip lines.
  • more or fewer areas of the circuits of prior art devices could be replaced or modified by highly conductive metal films, dielectric films or dielectric constant gradient substrates. The purpose of the replacements or modifications is to reduce the current density beyond that of a prior art device consisting only of HTS films at the same power level.

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
US08/577,156 1994-12-28 1995-12-22 High power superconductive circuits and method of construction thereof Expired - Fee Related US6041245A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9426294.6A GB9426294D0 (en) 1994-12-28 1994-12-28 High power soperconductive circuits and method of construction thereof
GB9426294 1994-12-28

Publications (1)

Publication Number Publication Date
US6041245A true US6041245A (en) 2000-03-21

Family

ID=10766647

Family Applications (1)

Application Number Title Priority Date Filing Date
US08/577,156 Expired - Fee Related US6041245A (en) 1994-12-28 1995-12-22 High power superconductive circuits and method of construction thereof

Country Status (4)

Country Link
US (1) US6041245A (enrdf_load_stackoverflow)
EP (1) EP0720248A2 (enrdf_load_stackoverflow)
CA (1) CA2166014C (enrdf_load_stackoverflow)
GB (1) GB9426294D0 (enrdf_load_stackoverflow)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6483404B1 (en) 2001-08-20 2002-11-19 Xytrans, Inc. Millimeter wave filter for surface mount applications
US6498551B1 (en) 2001-08-20 2002-12-24 Xytrans, Inc. Millimeter wave module (MMW) for microwave monolithic integrated circuit (MMIC)
US6532376B1 (en) 1998-07-17 2003-03-11 Telefonaktiebolaget Lm Ericsson (Publ) Switchable low-pass superconductive filter
US6556109B2 (en) * 2000-05-23 2003-04-29 Murata Manufacturing Co., Ltd. Dual mode band pass filter
US6556849B2 (en) * 1998-07-17 2003-04-29 Telefonaktiebolaget Lm Ericsson (Publ) Switchable superconductive inductor
US20030087765A1 (en) * 1993-05-28 2003-05-08 Superconductor Technologies, Inc. High temperature superconducting structures and methods for high Q, reduced intermodulation structures
US20030155990A1 (en) * 2002-02-19 2003-08-21 Conductus, Inc. Method and apparatus for minimizing intermodulation with an asymmetric resonator
US6633208B2 (en) 2001-06-19 2003-10-14 Superconductor Technologies, Inc. Filter with improved intermodulation distortion characteristics and methods of making the improved filter
US20030222732A1 (en) * 2002-05-29 2003-12-04 Superconductor Technologies, Inc. Narrow-band filters with zig-zag hairpin resonator
US6731960B2 (en) * 1998-09-22 2004-05-04 Isco International, Inc. Dual operation mode all temperature filter using superconducting resonators with superconductive/non-superconductive mixture
US6798320B2 (en) * 2001-01-29 2004-09-28 Murata Manufacturing Co., Ltd. Microstrip line having a line electrode with integral edge electrodes
US6809617B2 (en) 2002-12-17 2004-10-26 Intel Corporation Edge plated transmission line and switch integrally formed therewith
US6823201B2 (en) * 2000-01-28 2004-11-23 Fujitsu Limited Superconducting microstrip filter having current density reduction parts
US20040238699A1 (en) * 2003-05-30 2004-12-02 Harp Richard A. Kneeler
US20050088258A1 (en) * 2003-10-27 2005-04-28 Xytrans, Inc. Millimeter wave surface mount filter
US20050104683A1 (en) * 1989-01-13 2005-05-19 Cortes Balam Quitze Andres W. High temperature superconducting structures and methods for high Q, reduced intermodulation structures
US6961597B1 (en) 2003-07-01 2005-11-01 The United States Of America As Represented By The Secretary Of The Navy Strips for imparting low nonlinearity to high temperature superconductor microwave filters
JP2006352459A (ja) * 2005-06-15 2006-12-28 Fujitsu Ltd 超伝導フィルタ装置およびその作製方法
US20070207761A1 (en) * 2005-12-16 2007-09-06 Honeywell International Inc. Mems based multiband receiver architecture
US20070235299A1 (en) * 2006-04-05 2007-10-11 Mojgan Daneshmand Multi-Port Monolithic RF MEMS Switches and Switch Matrices
US20100056379A1 (en) * 2008-08-28 2010-03-04 Hong Kong Applied Science and Technologies Research Institute Co., Ltd. Mixed Material RF Circuits and Components

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6711394B2 (en) * 1998-08-06 2004-03-23 Isco International, Inc. RF receiver having cascaded filters and an intermediate amplifier stage
JP2000156621A (ja) * 1998-11-19 2000-06-06 Philips Japan Ltd 高周波誘電体装置
JP3465627B2 (ja) * 1999-04-28 2003-11-10 株式会社村田製作所 電子部品、誘電体共振器、誘電体フィルタ、デュプレクサ、通信機装置
US6522217B1 (en) 1999-12-01 2003-02-18 E. I. Du Pont De Nemours And Company Tunable high temperature superconducting filter
WO2005064738A1 (en) * 2003-09-18 2005-07-14 Conductus, Inc. Stripline filter utilizing one or more inter-resonator coupling members

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3681713A (en) * 1970-02-12 1972-08-01 Rca Corp High q circuits on ceramic substrates
JPS63263745A (ja) * 1987-04-22 1988-10-31 Hitachi Ltd 配線
JPH01273402A (ja) * 1988-04-26 1989-11-01 Hitachi Chem Co Ltd マイクロストリップ線路
JPH0217701A (ja) * 1988-07-05 1990-01-22 Fujitsu Ltd 超伝導平面回路
JPH0529809A (ja) * 1991-07-24 1993-02-05 Murata Mfg Co Ltd 伝送線路
US5215959A (en) * 1990-09-21 1993-06-01 University Of California, Berkeley Devices comprised of discrete high-temperature superconductor chips disposed on a surface
US5219827A (en) * 1990-04-03 1993-06-15 Sumitomo Electric Industries, Ltd. Microwave resonator having a ground conductor partially composed of oxide superconductor material
JPH0697708A (ja) * 1992-09-11 1994-04-08 Fujitsu Ltd マイクロ波伝送線路
US5324713A (en) * 1991-11-05 1994-06-28 E. I. Du Pont De Nemours And Company High temperature superconductor support structures for dielectric resonator

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63299010A (ja) * 1987-05-29 1988-12-06 Toshiba Corp セラミック超伝導材料
US5160906A (en) * 1991-06-24 1992-11-03 Motorola, Inc. Microstripe filter having edge flared structures

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3681713A (en) * 1970-02-12 1972-08-01 Rca Corp High q circuits on ceramic substrates
JPS63263745A (ja) * 1987-04-22 1988-10-31 Hitachi Ltd 配線
JPH01273402A (ja) * 1988-04-26 1989-11-01 Hitachi Chem Co Ltd マイクロストリップ線路
JPH0217701A (ja) * 1988-07-05 1990-01-22 Fujitsu Ltd 超伝導平面回路
US5219827A (en) * 1990-04-03 1993-06-15 Sumitomo Electric Industries, Ltd. Microwave resonator having a ground conductor partially composed of oxide superconductor material
US5215959A (en) * 1990-09-21 1993-06-01 University Of California, Berkeley Devices comprised of discrete high-temperature superconductor chips disposed on a surface
JPH0529809A (ja) * 1991-07-24 1993-02-05 Murata Mfg Co Ltd 伝送線路
US5324713A (en) * 1991-11-05 1994-06-28 E. I. Du Pont De Nemours And Company High temperature superconductor support structures for dielectric resonator
JPH0697708A (ja) * 1992-09-11 1994-04-08 Fujitsu Ltd マイクロ波伝送線路

Cited By (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7231238B2 (en) 1989-01-13 2007-06-12 Superconductor Technologies, Inc. High temperature spiral snake superconducting resonator having wider runs with higher current density
US20050104683A1 (en) * 1989-01-13 2005-05-19 Cortes Balam Quitze Andres W. High temperature superconducting structures and methods for high Q, reduced intermodulation structures
US20030087765A1 (en) * 1993-05-28 2003-05-08 Superconductor Technologies, Inc. High temperature superconducting structures and methods for high Q, reduced intermodulation structures
US6895262B2 (en) 1993-05-28 2005-05-17 Superconductor Technologies, Inc. High temperature superconducting spiral snake structures and methods for high Q, reduced intermodulation structures
US6532376B1 (en) 1998-07-17 2003-03-11 Telefonaktiebolaget Lm Ericsson (Publ) Switchable low-pass superconductive filter
US6556849B2 (en) * 1998-07-17 2003-04-29 Telefonaktiebolaget Lm Ericsson (Publ) Switchable superconductive inductor
US6731960B2 (en) * 1998-09-22 2004-05-04 Isco International, Inc. Dual operation mode all temperature filter using superconducting resonators with superconductive/non-superconductive mixture
US6823201B2 (en) * 2000-01-28 2004-11-23 Fujitsu Limited Superconducting microstrip filter having current density reduction parts
US6556109B2 (en) * 2000-05-23 2003-04-29 Murata Manufacturing Co., Ltd. Dual mode band pass filter
US6798320B2 (en) * 2001-01-29 2004-09-28 Murata Manufacturing Co., Ltd. Microstrip line having a line electrode with integral edge electrodes
US20050012572A1 (en) * 2001-01-29 2005-01-20 Murata Manufacturing Co., Ltd. Microstrip line, resonator element, filter, high-frequency circuit and electronic device using the same
US6633208B2 (en) 2001-06-19 2003-10-14 Superconductor Technologies, Inc. Filter with improved intermodulation distortion characteristics and methods of making the improved filter
US6653916B2 (en) 2001-08-20 2003-11-25 Xytrans, Inc. Microwave monolithic integrated circuit (MMIC) carrier interface
US6498551B1 (en) 2001-08-20 2002-12-24 Xytrans, Inc. Millimeter wave module (MMW) for microwave monolithic integrated circuit (MMIC)
US6816041B2 (en) 2001-08-20 2004-11-09 Xytrans, Inc. Microwave monolithic integrated circuit (MMIC) carrier interface
US20040108922A1 (en) * 2001-08-20 2004-06-10 Xytrans, Inc. Microwave monolithic integrated circuit (mmic) carrier interface
US6483404B1 (en) 2001-08-20 2002-11-19 Xytrans, Inc. Millimeter wave filter for surface mount applications
US20030155990A1 (en) * 2002-02-19 2003-08-21 Conductus, Inc. Method and apparatus for minimizing intermodulation with an asymmetric resonator
US7071797B2 (en) 2002-02-19 2006-07-04 Conductus, Inc. Method and apparatus for minimizing intermodulation with an asymmetric resonator
US20030222732A1 (en) * 2002-05-29 2003-12-04 Superconductor Technologies, Inc. Narrow-band filters with zig-zag hairpin resonator
US6809617B2 (en) 2002-12-17 2004-10-26 Intel Corporation Edge plated transmission line and switch integrally formed therewith
US20040238699A1 (en) * 2003-05-30 2004-12-02 Harp Richard A. Kneeler
US6961597B1 (en) 2003-07-01 2005-11-01 The United States Of America As Represented By The Secretary Of The Navy Strips for imparting low nonlinearity to high temperature superconductor microwave filters
US20050088258A1 (en) * 2003-10-27 2005-04-28 Xytrans, Inc. Millimeter wave surface mount filter
JP2006352459A (ja) * 2005-06-15 2006-12-28 Fujitsu Ltd 超伝導フィルタ装置およびその作製方法
US20070207761A1 (en) * 2005-12-16 2007-09-06 Honeywell International Inc. Mems based multiband receiver architecture
US20100279644A1 (en) * 2005-12-16 2010-11-04 Honeywell International Inc. Mems based multiband receiver architecture
US7937054B2 (en) * 2005-12-16 2011-05-03 Honeywell International Inc. MEMS based multiband receiver architecture
US20110171918A1 (en) * 2005-12-16 2011-07-14 Honeywell International, Inc. Mems based multiband receiver architecture
US8571469B2 (en) 2005-12-16 2013-10-29 Honeywell International Inc. MEMS based multiband receiver architecture
US8693974B2 (en) 2005-12-16 2014-04-08 Honeywell International Inc. MEMS based multiband receiver architecture
US20070235299A1 (en) * 2006-04-05 2007-10-11 Mojgan Daneshmand Multi-Port Monolithic RF MEMS Switches and Switch Matrices
US7778506B2 (en) * 2006-04-05 2010-08-17 Mojgan Daneshmand Multi-port monolithic RF MEMS switches and switch matrices
US20100056379A1 (en) * 2008-08-28 2010-03-04 Hong Kong Applied Science and Technologies Research Institute Co., Ltd. Mixed Material RF Circuits and Components
US8238989B2 (en) * 2008-08-28 2012-08-07 Hong Kong Applied Science And Technology Research Institute Co., Ltd. RF component with a superconducting area having higher current density than a non-superconducting area

Also Published As

Publication number Publication date
EP0720248A3 (enrdf_load_stackoverflow) 1996-08-07
CA2166014A1 (en) 1996-06-29
EP0720248A2 (en) 1996-07-03
GB9426294D0 (en) 1995-02-22
CA2166014C (en) 1998-02-24

Similar Documents

Publication Publication Date Title
US6041245A (en) High power superconductive circuits and method of construction thereof
EP1026772B1 (en) High-frequency circuit element
US6751489B2 (en) High temperature superconductor mini-filters and mini-multiplexers with self-resonant spiral resonators
EP0780034B1 (en) Lumped element filters
US5750473A (en) Planar high temperature superconductor filters with backside coupling
US6624727B2 (en) Resonator, filter, duplexer, and communication device
US6759930B2 (en) Filter circuit and a superconducting filter circuit
US6792299B2 (en) Device approximating a shunt capacitor for strip-line-type circuits
US5922650A (en) Method and structure for high power HTS transmission lines using strips separated by a gap
US6381478B2 (en) Superconductive high-frequency circuit element with smooth contour
JP2894245B2 (ja) 高周波伝送線路
JP2898462B2 (ja) 高周波フィルタ
Weigel et al. Narrow-band YBCO superconducting parallel-coupled coplanar waveguide band-pass filters at 10 GHz
KR100303464B1 (ko) 고주파 회로 소자
EP0814532B1 (en) Monolithic Semiconductor Component
JPH10294616A (ja) 超電導薄膜回路
JP2586248B2 (ja) 伝送線路
JPH05160616A (ja) 薄膜共振器
JPH1127015A (ja) 超電導素子
US6934569B2 (en) Elliptical resonators with radial current mode and radio frequency filter formed therefrom
JP2005223446A (ja) フィルタ
JP2000502231A (ja) 信号をフィルタリングする装置およびそれに関連する方法
KR100219277B1 (ko) 판형 초전도체회로의 구조
Suginosita et al. 13.3 GHz YBCO microstrip bandpass filter
JPH08274515A (ja) 高周波回路素子及びその製造方法

Legal Events

Date Code Title Description
REMI Maintenance fee reminder mailed
LAPS Lapse for failure to pay maintenance fees
FP Expired due to failure to pay maintenance fee

Effective date: 20040321

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362