US5249114A - Arrangement of a valve stack for high voltage direct current in a valve hall - Google Patents

Arrangement of a valve stack for high voltage direct current in a valve hall Download PDF

Info

Publication number
US5249114A
US5249114A US07/820,857 US82085792A US5249114A US 5249114 A US5249114 A US 5249114A US 82085792 A US82085792 A US 82085792A US 5249114 A US5249114 A US 5249114A
Authority
US
United States
Prior art keywords
valve
stack
roof
hall
high voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US07/820,857
Other languages
English (en)
Inventor
Gunnar Asplund
Olle Ekwall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB AB
Original Assignee
Asea Brown Boveri AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri AB filed Critical Asea Brown Boveri AB
Application granted granted Critical
Publication of US5249114A publication Critical patent/US5249114A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02BBOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
    • H02B7/00Enclosed substations, e.g. compact substations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/117Stacked arrangements of devices
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00Constructional details common to different types of electric apparatus
    • H05K7/14Mounting supporting structure in casing or on frame or rack
    • H05K7/1422Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
    • H05K7/1427Housings
    • H05K7/1432Housings specially adapted for power drive units or power converters
    • H05K7/14339Housings specially adapted for power drive units or power converters specially adapted for high voltage operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • each valve stack which is composed of a number of electrically series-connected valve modules arranged one after the other and which in operation have a voltage to ground which increases along the stack, in a substantially lying position.
  • the valve stack is to lie at such a distance from the floor and roof of the valve hall, respectively, that the smallest electrical flashover distance between live parts on the stack and the floor and roof, respectively, is contained and that electrical connection to the stack is arranged at bushings through the roof of the valve hall.
  • the volume of the valve hall may even be reduced if the roof of the valve hall is made sloping towards the horizontal plane and this is combined with the fact that the flashover voltage to ground increases along the valve stack from one end thereof to the other.
  • the volume of the hall may be further reduced if the valve stack is suspended in such a way that the distance between live points on the valve stack and the roof and floor, respectively, of the valve hall is only kept somewhat greater than the current flashover distance between the corresponding points and the roof and floor, respectively, of the valve hall.
  • a further simplification of the erection may be made if three valve stacks in a valve hall are arranged in a star- or Y-configuration with the high voltage ends of the valve stacks brought together and electrically interconnected at the center of the star and connected to a common bushing for the high voltage direct current.
  • the volume of the hall may be further reduced by the roof now being given a dome-like shape which makes it possible to make all the walls in the hall lower in comparison with an arrangement in which the stacks are suspended in a lying, but parallel, manner. In the latter case, the whole wall of the hall against the high voltage end of the stacks must be made considerably higher than the corresponding wall at the low voltage end.
  • FIG. 1 shows a side view of the valve hall which is commonly used today
  • FIG. 2 shows a proposal for a new arrangement of the valve stacks in a valve hall.
  • FIG. 2 is a section of A--A in FIG. 3,
  • FIG. 3 shows a section of B--B in FIG. 2
  • FIG. 4 shows the valve hall according to FIGS. 2 and 3 seen from above with transformers, not shown in FIGS. 2 and 3,
  • FIG. 5 shows a wiring diagram for the rectifier station according to FIG. 4,
  • FIG. 6 shows an embodiment with a sloping roof of the valve hall
  • FIG. 7 shows a combination of a sloping roof and an obliquely suspended valve stack
  • FIG. 8 shows the principle of a star-shaped arrangement of lying valve stacks
  • FIG. 9 shows a possible embodiment of a valve hall for such an erection or suspension of the valve stacks.
  • FIG. 1, 1 designates the valve hall and 2 a valve stack for high voltage direct current suspended therein.
  • the valve stack 2 is composed of electrically series-connected valve modules 3 which are bridged by overvoltage protective means 4.
  • the valve stack 2 is supplied from a transformer (not shown) via the bushings 5 and 6.
  • the bushing 7 is intended for connection to a line or cable for high voltage direct current whereas the low voltage side of the valve stack 2 is intended to be connected, via the bushing 8, to the electrode (not shown) of the direct current transmission.
  • the valve stack 2 is suspended from the roof 9 of the valve hall by means of suspension insulators 10. In this type of valve halls, thus, the risk of flashover caused by dirt across the bushing 7 is great at direct voltage levels above 400 kV. This is due to the fact that, especially in case of certain wind directions, the bushing 7 comes within the rain shadow of the high building.
  • valve hall 1 and the valve stack 2 have been overturned so that both of them can now be said to be lying down instead of standing on edge.
  • objects in FIG. 2 have been given the same designations as those in FIG. 1.
  • the bushings 5-8 may be placed vertically on the roof 9 of the valve hall 1 without the volume of the valve hall 1 having to be increased and without the total cost of the plant increasing.
  • FIG. 3 shows, as mentioned, a section B--B of FIG. 2. In FIG. 3 the same designations as before are still used.
  • FIG. 3 shows two additional valve stacks 2' and 2" which together with the valve stack 2 form a complete rectifier station. This is supplied with alternating current from the transformer 11, the high voltage side of which has been connected to the bushings 6 according to FIG. 2. These bushings 6 are in FIG. 3 concealed by the bushings 7.
  • FIG. 4 shows the same valve hall 1, seen from above.
  • 12 designates a additional transformer which supplies the valve stacks 2, 2' and 2" via the bushings 5.
  • the line 13 leads to a line for the high voltage direct current transmission, whereas the line 14 leads to an electrode for the corresponding transmission.
  • FIG. 5 shows an electric wiring diagram for a plant according to FIG. 4.
  • FIG. 6 shows a valve hall 15 with a sloping roof over the suspended valve stack 2.
  • the circumstance has been utilized that the voltage at one end of the valve stack 2 is low and then increases to high voltage at the other end of the stack 2. Consequently, the distance to the roof 16, i.e. to ground, may be allowed to be smaller at the low voltage end of the valve stack 2 than at its high voltage end. The volume of the valve hall 15 may thus be reduced in relation to the embodiment described above.
  • FIG. 7 shows another possible modification.
  • FIG. 8 shows the principle of a star-shaped arrangement of the valve stacks 2, 2' and 2" in a valve hall 19,
  • the valve stacks are here arranged with their high voltage ends converging at the center of the star. This means that a common bushing for the high voltage direct current may be used and that the largest necessary insulation distance to ground for the three valve stacks will be in common.
  • valve hall 19 may advantageously be given the shape as shown in FIG. 9.
  • the valve hall 19 has here a dome-like shape with long side walls all around as a consequence of the low voltage ends of the stacks 2 facing the wall of the hall whereas their high voltage ends, so to speak, share the insulation distance from the center of the star to the highest point of the domed roof. If, in addition, the stacks were to be suspended as shown in FIG. 7, it would be possible to make the side walls even lower, thus saving additional valve hall volume.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Housings And Mounting Of Transformers (AREA)
  • Building Environments (AREA)
  • Rectifiers (AREA)
US07/820,857 1989-08-16 1990-06-29 Arrangement of a valve stack for high voltage direct current in a valve hall Expired - Lifetime US5249114A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE8902744A SE464492B (sv) 1989-08-16 1989-08-16 Anordning av ventilstapel foer hoegspaend likstroem i en ventilhall
SE8902744 1989-08-16

Publications (1)

Publication Number Publication Date
US5249114A true US5249114A (en) 1993-09-28

Family

ID=20376675

Family Applications (1)

Application Number Title Priority Date Filing Date
US07/820,857 Expired - Lifetime US5249114A (en) 1989-08-16 1990-06-29 Arrangement of a valve stack for high voltage direct current in a valve hall

Country Status (7)

Country Link
US (1) US5249114A (fr)
EP (1) EP0487556B1 (fr)
JP (1) JP3042877B2 (fr)
AU (1) AU6144190A (fr)
DE (1) DE69012574T2 (fr)
SE (1) SE464492B (fr)
WO (1) WO1991003087A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5790388A (en) * 1994-06-30 1998-08-04 Gec Alsthom Limited Antiseismic static electrical converter apparatus
WO2006094952A1 (fr) * 2005-03-09 2006-09-14 Siemens Aktiengesellschaft Transfert de courant continu haute tension a douze impulsions
US20090266605A1 (en) * 2006-06-20 2009-10-29 Abb Research Ltd. High voltage valve group with increased breakdown strength

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106877372B (zh) * 2017-03-01 2023-08-18 中国电力工程顾问集团中南电力设计院有限公司 柔性直流背靠背换流站阀厅布置结构

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090233A (en) * 1975-08-25 1978-05-16 Siemens Aktiengesellschaft Spatial arrangement of the valves of a three-pulse converter system
US4318169A (en) * 1979-03-27 1982-03-02 Asea Aktiebolag Suspension-mounted static electrical converter
US4578745A (en) * 1983-10-06 1986-03-25 Asea Ab Semiconductor valve
US4583158A (en) * 1983-06-14 1986-04-15 Kabushiki Kaisha Toshiba High voltage thyristor valve
US4618923A (en) * 1984-02-06 1986-10-21 Siemens Aktiengesellschaft Direct current tight coupling
US4631656A (en) * 1983-06-16 1986-12-23 Asea Aktiebolag Mounting for electrical converter valve assembly
US4675720A (en) * 1984-08-23 1987-06-23 Kabushiki Kaisha Toshiba Enclosed thyristor valve
US4816980A (en) * 1987-07-13 1989-03-28 Siemens Aktiengesellschaft Converter system for coupling two high voltage three-phase networks
US5117346A (en) * 1990-04-23 1992-05-26 Asea Brown Boveri Ab Convertor plant roller contact connector for convertor plant

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1081110B (de) * 1956-09-28 1960-05-05 Siemens Ag Gekapselte Hoechstspannungs- Schaltanlage
DE1181781B (de) * 1962-06-28 1964-11-19 Licentia Gmbh Hoechstspannungsschaltanlage
DE1765462A1 (de) * 1968-05-22 1971-11-18 Schnellbach Guenther P Fertiginstallierte transportable Freiluft-Trafostation einschliesslich Mast fuer Freileltungszugang
SE425279B (sv) * 1981-01-28 1982-09-13 Asea Ab Transformatorstation

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4090233A (en) * 1975-08-25 1978-05-16 Siemens Aktiengesellschaft Spatial arrangement of the valves of a three-pulse converter system
US4318169A (en) * 1979-03-27 1982-03-02 Asea Aktiebolag Suspension-mounted static electrical converter
US4583158A (en) * 1983-06-14 1986-04-15 Kabushiki Kaisha Toshiba High voltage thyristor valve
US4631656A (en) * 1983-06-16 1986-12-23 Asea Aktiebolag Mounting for electrical converter valve assembly
US4578745A (en) * 1983-10-06 1986-03-25 Asea Ab Semiconductor valve
US4618923A (en) * 1984-02-06 1986-10-21 Siemens Aktiengesellschaft Direct current tight coupling
US4675720A (en) * 1984-08-23 1987-06-23 Kabushiki Kaisha Toshiba Enclosed thyristor valve
US4816980A (en) * 1987-07-13 1989-03-28 Siemens Aktiengesellschaft Converter system for coupling two high voltage three-phase networks
US5117346A (en) * 1990-04-23 1992-05-26 Asea Brown Boveri Ab Convertor plant roller contact connector for convertor plant

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5790388A (en) * 1994-06-30 1998-08-04 Gec Alsthom Limited Antiseismic static electrical converter apparatus
WO2006094952A1 (fr) * 2005-03-09 2006-09-14 Siemens Aktiengesellschaft Transfert de courant continu haute tension a douze impulsions
US20090225570A1 (en) * 2005-03-09 2009-09-10 Siemens Aktiengesellschaft Twelve-pulse HVDC Transmission
US7881078B2 (en) 2005-03-09 2011-02-01 Siemens Ag Twelve-pulse HVDC transmission
US20090266605A1 (en) * 2006-06-20 2009-10-29 Abb Research Ltd. High voltage valve group with increased breakdown strength

Also Published As

Publication number Publication date
SE8902744L (sv) 1991-02-17
SE8902744D0 (sv) 1989-08-16
EP0487556B1 (fr) 1994-09-14
DE69012574D1 (de) 1994-10-20
SE464492B (sv) 1991-04-29
AU6144190A (en) 1991-04-03
WO1991003087A1 (fr) 1991-03-07
EP0487556A1 (fr) 1992-06-03
JPH04507339A (ja) 1992-12-17
DE69012574T2 (de) 1995-04-20
JP3042877B2 (ja) 2000-05-22

Similar Documents

Publication Publication Date Title
US5249114A (en) Arrangement of a valve stack for high voltage direct current in a valve hall
US4939618A (en) Lightning protected electric fence controller system and method
US5128648A (en) Line cutout for electrical distribution system
US5126917A (en) Gas insulated switchgear
EP0055094A2 (fr) Sous-stations à isolation gazeuse
JPH0564323A (ja) 直流変電所
CA1053763A (fr) Structure d'interface electrique
US4413307A (en) Bus bar extensions to outside of busway for external connections
US3457428A (en) Underground residential distribution system for electric power
US4442364A (en) Overhead electric transmission systems
US3145259A (en) Three phase electrical power distribution system
US1744353A (en) Support for transmission lines
US4620758A (en) Connecting device for stiff electric conductors
JPH1118216A (ja) 絶縁配線配電盤及び裏配線用端子台
CN209844248U (zh) 落地式高压隔离开关柜
JPH079352Y2 (ja) 避雷器取付装置
SU964830A1 (ru) Трехфазна воздушна лини электропередачи
US949604A (en) System of insulation.
CN110060827A (zh) 复合绝缘子
CN2337652Y (zh) 三相组合式金属氧化物避雷器
CA1296381C (fr) Systeme de regulation de tension pour cloture electrique, assurant une protection contre la foudre, et methode connexe
JPS5910901Y2 (ja) ケ−ブル終端部
US925561A (en) Suspension of high-tension lines.
JP2937507B2 (ja) ガス絶縁開閉装置
CN117999719A (zh) 太阳能模块和功率转换器的中压布置

Legal Events

Date Code Title Description
STCF Information on status: patent grant

Free format text: PATENTED CASE

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12