US4943971A - Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays - Google Patents

Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays Download PDF

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Publication number
US4943971A
US4943971A US07/314,977 US31497789A US4943971A US 4943971 A US4943971 A US 4943971A US 31497789 A US31497789 A US 31497789A US 4943971 A US4943971 A US 4943971A
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layer
lead salt
buried
active region
index
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Zeev Fiet
Douglas Kostyk
Robert J. Woods
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Laser Photonics Inc
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Spectra Physics Inc
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Assigned to SPECTRA-PHYSICS, INC. reassignment SPECTRA-PHYSICS, INC. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: FEIT, ZEEV, KOSTYK, DOUGLAS, WOODS, ROBERT J.
Priority to US07/468,842 priority patent/US5028563A/en
Priority to EP19900301946 priority patent/EP0385668A3/de
Assigned to LASER PHOTONICS, INC., A CORP. OF DE reassignment LASER PHOTONICS, INC., A CORP. OF DE ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: SPECTRA-PHYSICS, INC.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3222—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIVBVI compounds, e.g. PbSSe-laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Definitions

  • the invention relates to lead salt semiconductor diode lasers, and more particularly, to a lead chalcogenide buried heterostructure laser diode and laser array, and the method for making the same.
  • a semiconductor diode laser is a monocrystalline pn junction device.
  • the pn junction is in a plane disposed in an active region between two parallel rectangular faces of a monocrystalline semiconductor body.
  • Two mutually parallel reflective faces that are perpendicular to the pn junction form a laser cavity.
  • Lasing action is produced by applying a forward voltage across the pn junction, which causes electrons and holes to be injected across the junction, where they recombine and cause a stimulated emission of radiation. Above a given level of electron injection, called the threshold current, the emitted radiation is collected and amplified in the active region. The amplified radiation exits the active region parallel to the pn junction as a monochromatic beam.
  • One problem is that some electrons and holes which are injected into the active region do not stimulate emission therein. This occurs, for example, when the electron or hole escapes to outside the active region to adjacent portions of the semiconductor body, where it recombines without contributing to laser emission. Similarly, photons produced in the active region can escape from the active region by radiation in a direction not parallel to the pn unction. In addition, some electrons disappear within the active region without producing the desired emission of radiation, such as when they combine with holes at crystal defects.
  • Lead-europium selenide-telluride laser devices of this type are known. Because the active layer in these devices is not entirely surrounded by the contiguous layers, i.e., is not buried, laser emission. Similarly, photons produced in the active region can escape from the active region by radiation in a direction not parallel to the pn junction. In addition, some electrons disappear within the active region without producing the desired emission of radiation, such as when they combine with holes at crystal defects.
  • Lead-europium selenide-telluride laser devices of this type are known. Because the active layer in these devices is not entirely surrounded by the contiguous layers, i.e., is not buried, these devices are known to operate in single mode only for currents restricted to less than twice the threshold current.. In addition, these devices are known to have relatively noisy single mode behavior, relatively short tuning per mode, relatively narrow spaced modes, and to be less stable than desired.
  • the known sandwiched devices are produced in a relatively complicated procedure, utilizing (1) a one-step molecular beam epitaxy (MBE) process during which each of the various layers are grown onto the substrate, (2) a photolithographic process to form a mesa with the active layer between the confinement and buffer layers, (3) a native oxide passivation process, and (4) a two step metalization.
  • MBE molecular beam epitaxy
  • Buried heterostructure Pb(1-x)Sn(x)Te/PbTe(1-y)Se(y) lasers are known which are fabricated by a two-step liquid phase epitaxy (LPE) technique which does not allow the creation of buried heterostructure lasers or arrays which incorporate europium, strontium or calcium.
  • LPE liquid phase epitaxy
  • a buried heterostructure laser and array, and the method for making the same are disclosed.
  • An active layer of PbEuSeTe is entirely surrounded with larger band gap PbEuSeTe cladding layers.
  • the laser and array are produced in a two-step MBE process. During the first step of the MBE process, buffer, first cladding and active layers are grown. The sample is then removed from the MBE system for a microproduction step including etching and surface preparation. The sample is then returned to the MBE system for the growth of a second cladding layer and a capping layer. An ohmic contact is then evaporated onto the top and bottom surfaces.
  • a laser produced in the manner of the present invention has better single mode operation, and has low thresholds even at high operational temperatures.
  • the buried laser of the type disclosed herein has lower tuning rates and higher degrees of tunability.
  • the present invention provides buried heterostructure laser diodes which use europium, calcium, tin or strontium, and which thus work in specific frequency regions which have not been obtainable previously with buried waveguide structures.
  • a buried heterostructure array has the ability to couple between individual emitters.
  • FIG. 1 is a sectional view of a lead salt buried diode laser element made in accordance with the present invention
  • FIG. 2 is a flow chart showing the steps of manufacturing the diode laser of the present invention.
  • FIG. 3 is a sectional view of a diode laser array made in accordance with the present invention.
  • an infrared heterojunction lead salt laser diode having a lead-europium-selenide-telluride confinement region, and the method for making the same is disclosed.
  • other compositions such as europium/calcium or strontium/calcium may be used.
  • tin may be added to the active region layer to make a longer emission wavelength laser.
  • FIG. 1 depicts a semiconductor diode laser element 100 built on a monocrystalline lead telluride (PbTe) substrate 102.
  • Substrate 102 has a p-type doping of about 2 ⁇ 10 19 holes per cubic centimeter.
  • the crystal structure is face centered cubic and the lattice constant is about 6.460 angstroms.
  • a buffer layer 104 of PbTe doped with thallium is grown above this substrate 102.
  • This layer is typically 11/2 microns thick.
  • the buffer layer 104 is added to partially mask crystal imperfections that may arise at the interface between a first cladding layer 106 and the substrate 102.
  • the use of a buffer layer is known in the art, and need not be included to achieve the benefits of the disclosed invention.
  • a first cladding layer 106 of Pb(1-x)Eu(x)Se(y)Te(1-y) is deposited onto the buffer layer 104, if the buffer layer is used, or otherwise directly onto the substrate 102.
  • the cladding layer 106 is made to have a p-type conductivity, being given a p-type dopant concentration of approximately 10 19 holes per cubic centimeter. In the preferred example, the doping is accomplished using thallium, although other doping materials known in the art could also be used.
  • the cladding layer 106 is also preferably 11/2 microns thick, but typically may be of other dimensions (such as 1 to 2 microns).
  • An active layer 108 is grown onto the first cladding layer 106 during the first step of the two-step MBE process.
  • the active layer is preferably 3/4 micron thick.
  • the entire element is removed from the MBE chamber. Portions of the active layer 108 and cladding layer 106 are etched away by methods well known in the art, so as to leave behind only the waveguide portion of the active layer. While the length, width and depth of the etching depend on the characteristics of the desired laser, by way of example, they can provide an active layer of 4-8 microns width.
  • the surface of the element is prepared with a surface preparation electrochemical etchant such as Na 2 SO 3 :KOH:Glycerol, for continuation of the MBE process.
  • a second cladding layer 110 which is a blanket epitaxial layer of n-type Pb(1-x)Eu(x)Se(y)Te(1-y), is grown on the upper surface of the element 100. It preferably has a thickness of approximately 11/2 microns, and as seen in FIG. 1, it covers the entire active region layer.
  • the growth of layer 110 is followed by an optional capping layer 112 having a thickness of approximately 3/4 microns. As discussed above with reference to the buffer layer 104, the capping layer 112 is optional, and is used to provide a stable contacting layer.
  • the upper two layers 110 and 112 are doped to n-type conductivity, having an n-type impurity concentration of about 10 19 electrons per cubic centimeter.
  • the interface between the upper portion of the p-type layer and the lower portion of the n-type layer forms a pn junction.
  • the cladding layers function as an electron, hole, and photon confinement layer for the active layer 108.
  • the second cladding layer is a second europium/selenium or strontium/calcium containing semiconductive lead chalcogenide layer that is similar in composition and properties to the lower lead chalcogenide semiconductive layer except for the difference in doping.
  • the upper layer has a face centered cubic crystal lattice having a lattice constant of about 6.460 angstroms. Both of the layers have an energy band gap that is higher and an index of refraction that is lower than that of the active region layer, and hence, they can provide good carrier and optical confinement.
  • Dopants used in the substrate and the various layers can be the same as those conventionally used in making any lead salt semiconductor diode laser.
  • p-type doping can be done by adding an excess of tellurium or by including thallium, silver, sodium or potassium in the semiconductor composition.
  • p-type doping can be done by adding an excess of tellurium or by including thallium, silver, sodium or potassium in the semiconductor composition.
  • a dopant that has a very low diffusion constant to assure that the pn junction is not only abrupt as formed but remains so during use. In most instances, it is preferred to dope the various layers as formed rather than subsequently by diffusion.
  • Top ohmic contact 116 is then placed on the top epitaxial layer of the device, by means of evaporation techniques well known in the art.
  • gold is first evaporated onto the surface, followed by one evaporation of nickel.
  • the nickel is added to the gold contact to provide a barrier to prevent diffusion of indium from the packaging with the gold contact layer.
  • the wafer is then thinned to the desired thickness, and the bottom contact 114 is then put on the substrate side of the wafer. The wafer is then cleaved and packaged in processes known for use with any diode device.
  • the present invention is also suitable for creating laser diode arrays.
  • a plurality of active regions 108A and 108B are buried between a first cladding layer 106A and a second cladding layer 110A.
  • Buffer layers 104A and 112A, and ohmic contacts 116A and 114A serve the same functions as described with reference to FIG. 1.
  • the array is manufactured in a manner similar to the single diode, only with the etching process resulting in a plurality of waveguides.
  • the buried array provides higher power output than a single laser diode, approximately proportional to the number of the elements in the array.
  • the buried array provides the possibility of coupling modes, which is not generally possible with a sandwiched array.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
US07/314,977 1989-02-24 1989-02-24 Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays Expired - Fee Related US4943971A (en)

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Application Number Priority Date Filing Date Title
US07/314,977 US4943971A (en) 1989-02-24 1989-02-24 Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays
US07/468,842 US5028563A (en) 1989-02-24 1990-01-23 Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays
EP19900301946 EP0385668A3 (de) 1989-02-24 1990-02-23 Laserdiode
US07/616,365 US5119388A (en) 1989-02-24 1990-11-21 Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays

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US07/314,977 US4943971A (en) 1989-02-24 1989-02-24 Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5319668A (en) * 1992-09-30 1994-06-07 New Focus, Inc. Tuning system for external cavity diode laser
US5454002A (en) * 1994-04-28 1995-09-26 The Board Of Regents Of The University Of Oklahoma High temperature semiconductor diode laser
US6028667A (en) * 1996-05-13 2000-02-22 Process Instruments, Inc. Compact and robust spectrograph
US6100975A (en) * 1996-05-13 2000-08-08 Process Instruments, Inc. Raman spectroscopy apparatus and method using external cavity laser for continuous chemical analysis of sample streams
US8828279B1 (en) 2010-04-12 2014-09-09 Bowling Green State University Colloids of lead chalcogenide titanium dioxide and their synthesis

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3165191B2 (ja) * 1991-09-30 2001-05-14 財団法人電気磁気材料研究所 固溶半導体レーザ素子用材料およびレーザ素子
JP2786558B2 (ja) * 1992-01-09 1998-08-13 財団法人電気磁気材料研究所 固溶半導体レーザ素子用材料およびレーザ素子

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US4608694A (en) * 1983-12-27 1986-08-26 General Motors Corporation Lead-europium selenide-telluride heterojunction semiconductor laser
JPS61194887A (ja) * 1985-02-25 1986-08-29 Fujitsu Ltd 半導体レ−ザ
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JPS55102287A (en) * 1979-01-30 1980-08-05 Fujitsu Ltd Semiconductor laser element
US4608694A (en) * 1983-12-27 1986-08-26 General Motors Corporation Lead-europium selenide-telluride heterojunction semiconductor laser
JPS61194887A (ja) * 1985-02-25 1986-08-29 Fujitsu Ltd 半導体レ−ザ
US4612644A (en) * 1985-07-12 1986-09-16 General Motors Corporation Lead-alloy-telluride heterojunction semiconductor laser

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Kasemset et al., "Pb1-x Snx Te/PbTe1-y Sey Lattice-Matched Burial Heterostructure Lasers with CW Single Mode Output," Electronics Device Lett., vol. EDL-1, No. 5, May 1980, pp. 75-78.
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Kasemset et al., Pb 1 x Sn x Te/PbTe 1 y Se y Lattice Matched Burial Heterostructure Lasers with CW Single Mode Output, Electronics Device Lett., vol. EDL 1, No. 5, May 1980, pp. 75 78. *
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5319668A (en) * 1992-09-30 1994-06-07 New Focus, Inc. Tuning system for external cavity diode laser
US5454002A (en) * 1994-04-28 1995-09-26 The Board Of Regents Of The University Of Oklahoma High temperature semiconductor diode laser
US5629097A (en) * 1994-04-28 1997-05-13 The Board Of Regents Of The University Of Oklahoma Apparatus for fabricating semiconductor lasers
US5776794A (en) * 1994-04-28 1998-07-07 The Board Of Regents Of The University Of Oklahoma Method for fabricating semiconductor laser
US6028667A (en) * 1996-05-13 2000-02-22 Process Instruments, Inc. Compact and robust spectrograph
US6100975A (en) * 1996-05-13 2000-08-08 Process Instruments, Inc. Raman spectroscopy apparatus and method using external cavity laser for continuous chemical analysis of sample streams
US8828279B1 (en) 2010-04-12 2014-09-09 Bowling Green State University Colloids of lead chalcogenide titanium dioxide and their synthesis

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EP0385668A2 (de) 1990-09-05
EP0385668A3 (de) 1991-07-03

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