US4737196A - Amorphous solar cell - Google Patents

Amorphous solar cell Download PDF

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Publication number
US4737196A
US4737196A US06/852,754 US85275486A US4737196A US 4737196 A US4737196 A US 4737196A US 85275486 A US85275486 A US 85275486A US 4737196 A US4737196 A US 4737196A
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layer
amorphous
solar cell
semiconductor layer
micro
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Expired - Fee Related
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US06/852,754
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Yoshinori Yukimoto
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New Energy and Industrial Technology Development Organization
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Mitsubishi Electric Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076Multiple junction or tandem solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells

Definitions

  • the present invention relates to an amorphous solar cell which is a possible candidate for a low cost solar cell, and especially to a cell structure appropriate for enhancement of the efficiency thereof.
  • FIG. 3 is a cross-sectional view showing a prior art amorphous solar cell.
  • reference numeral 1 designates a substrate
  • numeral 2 designates as n type semiconductor layer provided over the substrate 1.
  • Numeral 3 designates an i type semiconductor layer
  • numeral 4 designates a p type semiconductor layer
  • numeral 5 designates a transparent electrode
  • numeral 6 designates a grid electrode.
  • a semiconductor layer in an amorphous state or a micro-crystalline semiconductor layer is used for the n and p type semiconductor layers 2 and 4.
  • a p or n type amorphous semiconductor including impurities has a high resistivity and a small energy band gap, and light absorption is likely to occur therein, thereby causing a loss in efficiency. Accordingly, micro-crystalline semiconductors have recently been used instead of amorphous semiconductors.
  • the device operates as follows.
  • pairs of electrons and positive holes are generated in the i type amorphous semiconductor which electrons and positive holes are pulled towards the n and p type semiconductor layers 2 and 4, respectively, by an internal electric field due to the p and n type semiconductor layers 2 and 4.
  • a larger number of electrons or positive holes than those arising from thermal equilibrium exist in the n and p type semiconductor layers 2 and 4, respectively.
  • the i type semiconductor layer 3 is considered to be a main generating region because electrons and positive holes generated in the p and n layer disappear quite rapidly due to recombination.
  • the electrical connecting layer between adjacent pin cells comprises a Pt cermet layer.
  • an amorphous solar cell having a p-i-n (or n-i-p) structure, in which either of the p or n layer is of a double layer structure comprising an amorphous semiconductor layer and a micro-crystalline semiconductor layer, wherein both layers are of the same conductivity types and the amorphous semiconductor layer is located at the side of the i layer.
  • FIG. 1 is a cross-sectional view showing an amorphous solar cell of one embodiment of the present invention
  • FIG. 2 is a cross-sectional view showing a tandem structure amorphous solar cell of another embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing a prior art amorphous solar cell.
  • FIG. 1 In ordr to explain the present invention in detail, reference will be particularly made to FIG. 1.
  • Reference numerals 21 and 22 designate an n type micro-crystalline semiconductor layer and an n type amorphous semiconductor layer, respectively, and both layers 21 and 22 together constitute an n layer.
  • the n type micro-crystalline semiconductor layer 21 includes 0.1 to 1 mol % of phosphorous atoms, and has a thickness in the range of 100 to 500 ⁇ .
  • the n type amorphous semiconductor layer 22 similarly includes 0.1 to 1 mol % phosphorous atoms, and is produced to have a thickness in a range of 10 to 50 ⁇ .
  • the numerals 41 and 42 designate a p type amorphous semiconductor layer and a p type micro-crystalline semiconductor layer, respectively, and both layers 41 and 42 together constitute a p layer.
  • the p type amorphous semiconductor layer 41 includes 0.1 to 1 mol % boron atoms, and has a thickness in the range of 10 to 50 ⁇
  • the p type micro-crystalline semiconductor layer 42 includes 0.1 to 1 mol % boron atoms, and has a thickness in the range of 20 to 100 ⁇ .
  • An amorphous semiconductor layer having a thickness in the range of 2 to 3 inter-atomic distances has an internal structure quite similar to that inside a mono-crystalline layer. On the other hand, in an amorphous semiconductor having a thickness exceeding that range both the inter-atomic distance and the bond angle become irregular.
  • a micro-crystalline layer having a thickness in a range of several tens to several hundreds of A has a structure quite similar to that of the mono-crystalline layer, and there is a region where the crystallinity is fairly irregular at the boundary between the crystal domains.
  • non-paired atoms are passivated by hydrogen atoms.
  • the boundary region is not perfectly passivated by hydrogen atoms thereby causing a defect.
  • the junction characteristic is not particularly good. Defects are also caused by the amorphous film being irregular due to large scale variation of the growth conditions such as an increase of the high frequency power applied during growth of the micro-crystalline layer after growth of the amorphous layer.
  • the p-i and n-i junctions are constituted by two amorphous semiconductors, and the junction comprising the amorphous semiconductor and the micro-crystalline semiconductor constitutes a p-p or n-n junction.
  • the influence of the boundary defect at the boundary between the amorphous layer and the micro-crystalline layer can be ignored because a large number of recombination centers originally exist at the p-p or n-n junction boundary surface.
  • the use of the low resistivity and high energy band gap micro-crystalline film effectively reduces the light absorption loss, and good electrical characteristics are also obtained.
  • each of the p and n layers of the amorphous solar cell is provided as a double layer structure comprising an amorphous semiconductor layer and a micro-crystalline semiconductor layer, and the p-i and n-i junctions are constituted only by amorphous semiconductors, thereby resulting in p-i and n-i junctions having a quite small amount of recombination centers.
  • the p and n amorphous layers 22 and 41 are made thin, that is, having a thickness of 10 to 50 ⁇ , whereby the photocurrent loss is reduced to a great extent.
  • the device has a sufficiently low resisitivity due to the use of micro-crystalline n and p layers.
  • n layer at the substrate side can be constituted by only an amorphous layer.
  • FIG. 2 shows another embodiment of the present invention employing an amorphous solar cell having a tandem structure (pin/pin/pin . . . or nip/nip/ . . . ).
  • the p-n junction at the central portion is required to be of a low resistivity (which provides a large leakage current), large band gap energy and thin (which provides a low light absorption loss) layer.
  • a micro-crystalline layer is suitable for such a layer, a problem of current loss caused by the recombination centers existing at the boundary of the micro-crystalline layer and the amorphous i layer arises.
  • each layer of the p and n layer of tandem structure is constituted by an amorphous layer and a micro-crystalline layer, and the amorphous layer is located at the side of the i layer in this embodiment.
  • Such a construction enables attainment of a high efficiency solar cell similar to the first embodiment of FIG. 1.
  • reference numerals 31 and 32 designate i type semiconductor layers
  • numerals 411 and 421 designate p type amorphous semiconductor layers
  • numerals 412 and 422 designate p type micro-crystalline semiconductor layers, such constituting a p layer together with the amorphous layers 411 and 421, respectively.
  • Numerals 413 and 414 together designate an n type micro-crystalline semiconductor layer and an n type amorphous semiconductor layer respectively.
  • Layers 413 and 414 together constitute an n layer.
  • the present invention is applicable to an n-i-p type amorphous solar cell, and is also applicable to an integrated type structure where the p-i-n or n-i-p structure is subdivided and the upper p (or n) layer and the lowe n (or p) layer are connected by an electrode wiring with each other, with the same effects as described above.
  • the present invention is applicable to a solar cell where the band gap energy of each i layer of the pin/pin/ . . . /pin structure becomes smaller further from the light incident surface so as the enable utilization of light of various wavelength regions within a range of the sunlight spectrum.
  • each of the p and n layers of the amorphous solar cell is made of a double layer structure comprising an amorphous semiconductor layer and a micro-crystalline semiconductor layer, and the amorphous layer is located at the side of the i layer.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
US06/852,754 1984-10-29 1986-04-16 Amorphous solar cell Expired - Fee Related US4737196A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59227097A JPS61104678A (ja) 1984-10-29 1984-10-29 アモルフアス太陽電池

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JP (1) JPS61104678A (fr)
DE (1) DE3614546A1 (fr)
FR (1) FR2598033B1 (fr)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4875944A (en) * 1987-09-17 1989-10-24 Fuji Electric Corporate Research And Development, Ltd. Amorphous photoelectric converting device
US4926230A (en) * 1986-04-04 1990-05-15 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Multiple junction solar power generation cells
US4948436A (en) * 1988-02-05 1990-08-14 Siemens Aktiengesellschaft Thin-film solar cell arrangement
US5239189A (en) * 1991-06-07 1993-08-24 Eastman Kodak Company Integrated light emitting and light detecting device
US5414275A (en) * 1991-01-11 1995-05-09 Canon Kabushiki Kaisha Photoelectric converting device and image processing apparatus utilizing the same
US5705828A (en) * 1991-08-10 1998-01-06 Sanyo Electric Co., Ltd. Photovoltaic device
EP0828301A2 (fr) * 1996-09-05 1998-03-11 Canon Kabushiki Kaisha Elément photovoltaique et méthode et appareil pour sa fabrication
EP0969523A2 (fr) * 1998-06-12 2000-01-05 Sharp Kabushiki Kaisha Dispositif photovoltaique et son procédé de fabrication
US20060137801A1 (en) * 2003-02-06 2006-06-29 Canon Kabushiki Kaisha Method of bonding ethylene-vinyl acetate copolymer formed product
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080188033A1 (en) * 2007-01-18 2008-08-07 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080196761A1 (en) * 2007-02-16 2008-08-21 Mitsubishi Heavy Industries, Ltd Photovoltaic device and process for producing same
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
EP2017895A2 (fr) * 2007-07-18 2009-01-21 SCHOTT Solar GmbH Cellule solaire multiple en silicium et son procédé de fabrication
US20090020154A1 (en) * 2007-01-18 2009-01-22 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US20090093080A1 (en) * 2007-07-10 2009-04-09 Soo Young Choi Solar cells and methods and apparatuses for forming the same including i-layer and n-layer chamber cleaning
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
US20090130827A1 (en) * 2007-11-02 2009-05-21 Soo Young Choi Intrinsic amorphous silicon layer
US20090142878A1 (en) * 2007-11-02 2009-06-04 Applied Materials, Inc. Plasma treatment between deposition processes
WO2010020469A3 (fr) * 2008-08-19 2010-08-19 Oerlikon Solar Ip Ag, Truebbach Cellule photovoltaïque et procédé de fabrication d'une cellule photovoltaïque
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
US20130203210A1 (en) * 2010-10-14 2013-08-08 Kaneka Corporation Method for manufacturing silicon-based solar cell
JP2014135343A (ja) * 2013-01-09 2014-07-24 Sharp Corp 光電変換素子および光電変換素子の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105514B2 (ja) * 1986-12-11 1995-11-13 三洋電機株式会社 光起電力装置
NL1000264C2 (nl) * 1995-05-01 1996-11-04 Frans Willem Saris Zonnecel met meerlaagsstructuur van dunne films silicium.

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JPS57204178A (en) * 1981-06-10 1982-12-14 Matsushita Electric Ind Co Ltd Optoelectric transducer
JPS58122783A (ja) * 1982-01-14 1983-07-21 Sanyo Electric Co Ltd 光起電力装置
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Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926230A (en) * 1986-04-04 1990-05-15 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Multiple junction solar power generation cells
US4875944A (en) * 1987-09-17 1989-10-24 Fuji Electric Corporate Research And Development, Ltd. Amorphous photoelectric converting device
US4948436A (en) * 1988-02-05 1990-08-14 Siemens Aktiengesellschaft Thin-film solar cell arrangement
US5414275A (en) * 1991-01-11 1995-05-09 Canon Kabushiki Kaisha Photoelectric converting device and image processing apparatus utilizing the same
US5239189A (en) * 1991-06-07 1993-08-24 Eastman Kodak Company Integrated light emitting and light detecting device
US5705828A (en) * 1991-08-10 1998-01-06 Sanyo Electric Co., Ltd. Photovoltaic device
EP0828301A2 (fr) * 1996-09-05 1998-03-11 Canon Kabushiki Kaisha Elément photovoltaique et méthode et appareil pour sa fabrication
EP0828301A3 (fr) * 1996-09-05 1999-07-14 Canon Kabushiki Kaisha Elément photovoltaique et méthode et appareil pour sa fabrication
US6162988A (en) * 1996-09-05 2000-12-19 Canon Kabushiki Kaisha Photovoltaic element
US6368944B1 (en) 1996-09-05 2002-04-09 Canon Kabushiki Kaisha Method of manufacturing photovoltaic element and apparatus therefor
US20050161077A1 (en) * 1996-09-05 2005-07-28 Canon Kabushiki Kaisha Apparatus for manufacturing photovoltaic elements
EP0969523A2 (fr) * 1998-06-12 2000-01-05 Sharp Kabushiki Kaisha Dispositif photovoltaique et son procédé de fabrication
EP0969523A3 (fr) * 1998-06-12 2000-07-05 Sharp Kabushiki Kaisha Dispositif photovoltaique et son procédé de fabrication
US6242686B1 (en) 1998-06-12 2001-06-05 Sharp Kabushiki Kaisha Photovoltaic device and process for producing the same
US20060137801A1 (en) * 2003-02-06 2006-06-29 Canon Kabushiki Kaisha Method of bonding ethylene-vinyl acetate copolymer formed product
US20090020154A1 (en) * 2007-01-18 2009-01-22 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US20080188033A1 (en) * 2007-01-18 2008-08-07 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US20080264480A1 (en) * 2007-01-18 2008-10-30 Soo-Young Choi Multi-junction solar cells and methods and apparatuses for forming the same
EP2104955A2 (fr) * 2007-01-18 2009-09-30 Applied Materials, Inc. Piles solaires a jonction multiple et procedes et appareils pour la formation de celles-ci
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
EP2104955A4 (fr) * 2007-01-18 2011-06-22 Applied Materials Inc Piles solaires a jonction multiple et procedes et appareils pour la formation de celles-ci
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080196761A1 (en) * 2007-02-16 2008-08-21 Mitsubishi Heavy Industries, Ltd Photovoltaic device and process for producing same
AU2007346981B2 (en) * 2007-02-16 2013-08-22 Mitsubishi Heavy Industries, Ltd. Photovoltaic device and process for producing same
US20090093080A1 (en) * 2007-07-10 2009-04-09 Soo Young Choi Solar cells and methods and apparatuses for forming the same including i-layer and n-layer chamber cleaning
US7875486B2 (en) 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
EP2017895A2 (fr) * 2007-07-18 2009-01-21 SCHOTT Solar GmbH Cellule solaire multiple en silicium et son procédé de fabrication
DE102007033444A1 (de) * 2007-07-18 2009-01-29 Schott Solar Gmbh Silizium-Mehrfachsolarzelle und Verfahren zu deren Herstellung
CN101350377B (zh) * 2007-07-18 2012-06-13 肖特太阳能股份公司 硅多结太阳能电池及其制备方法
EP2017895A3 (fr) * 2007-07-18 2014-02-12 SCHOTT Solar AG Cellule solaire multiple en silicium et son procédé de fabrication
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
US20090142878A1 (en) * 2007-11-02 2009-06-04 Applied Materials, Inc. Plasma treatment between deposition processes
US7741144B2 (en) 2007-11-02 2010-06-22 Applied Materials, Inc. Plasma treatment between deposition processes
US20090130827A1 (en) * 2007-11-02 2009-05-21 Soo Young Choi Intrinsic amorphous silicon layer
WO2010020469A3 (fr) * 2008-08-19 2010-08-19 Oerlikon Solar Ip Ag, Truebbach Cellule photovoltaïque et procédé de fabrication d'une cellule photovoltaïque
US20110180124A1 (en) * 2008-08-19 2011-07-28 Oerlikon Solar Ag, Truebbach Photovoltaic cell and method of manufacturing a photovoltaic cell
CN102144296A (zh) * 2008-08-19 2011-08-03 欧瑞康太阳能股份公司(特吕巴赫) 光伏电池及光伏电池制造方法
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
US20130203210A1 (en) * 2010-10-14 2013-08-08 Kaneka Corporation Method for manufacturing silicon-based solar cell
US9276163B2 (en) * 2010-10-14 2016-03-01 Kaneka Corporation Method for manufacturing silicon-based solar cell
JP2014135343A (ja) * 2013-01-09 2014-07-24 Sharp Corp 光電変換素子および光電変換素子の製造方法

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Publication number Publication date
DE3614546A1 (de) 1987-11-05
FR2598033A1 (fr) 1987-10-30
FR2598033B1 (fr) 1988-10-21
JPS61104678A (ja) 1986-05-22

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