US4695871A - Light-triggered semiconductor device - Google Patents

Light-triggered semiconductor device Download PDF

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Publication number
US4695871A
US4695871A US06/526,807 US52680783A US4695871A US 4695871 A US4695871 A US 4695871A US 52680783 A US52680783 A US 52680783A US 4695871 A US4695871 A US 4695871A
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US
United States
Prior art keywords
light
sensitive area
triggered
semiconductor chip
light guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US06/526,807
Other languages
English (en)
Inventor
Yoshiaki Tsunoda
Hideo Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP57149995A external-priority patent/JPS5940575A/ja
Priority claimed from JP57230688A external-priority patent/JPS59123263A/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Assigned to TOKYO SHIBAURA DENKI KABUSHIKI KAISHA, A CORP. OF JAPAN reassignment TOKYO SHIBAURA DENKI KABUSHIKI KAISHA, A CORP. OF JAPAN ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: MATSUDA, HIDEO, TSUNODA, YOSHIAKI
Application granted granted Critical
Publication of US4695871A publication Critical patent/US4695871A/en
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Definitions

  • This invention relates to a light-triggered semiconductor device, and more particularly to an improvement on the light-transmitting mechanism of said light-triggered semiconductor device which is intended to improve the light-transmitting efficiency and reliability of the device.
  • a conventional light-triggered thyristor is constructed as shown in FIG. 1.
  • Reference numeral 1 denotes a light-triggered semiconductor chip (hereinafter referred to as "a chip").
  • the conventional thyristor is triggered by leading out a cathode and anode by a cathode electrode 2c and anode electrode 2a respectively pressed against a cathode electrode layer 1c and anode electrode layer 1a, and supplying a signal light to a light-sensitive area 1g positioned substantially at the center of the main plane on the cathode side.
  • a light guide 3 allowing for the passage of the signal light is formed of an optical fiber. Part of that side of the light guide 3 which lies near one end face 3a thereof is fixed to the chip by an adhesive 4 in such a manner that said one end face 3a faces the light-sensitive area 1g.
  • the light guide 3 is extended along an electrode 2c parallel with the main surface of the chip 1 through a pipe 6 penetrating the peripheral wall 5 of an envelope.
  • the other end face 3b of said light guide 3 faces a light-receiving window 7.
  • This invention has evolved in view of the previously described circumstances, and is intended to provide a light-triggered light transmission semiconductor device which is saved from a reduction in the light-triggering sensitivity and the ratio of di/dt and also from damage to the light guide.
  • this invention provides a light-triggered semiconductor device which comprises an airtight package enveloping a light-triggered semiconductor chip, a transparent window allowing for the passage of a signal light to a light-sensitive portion of the main surface of the semiconductor chip held in said airtight package, and a light guide connected to the light-sensitive portion of the main surface of said semiconductor chip, wherein that end face of the light guide which faces the semiconductor chip is chosen to have a larger diameter than the light-sensitive area formed on the main surface of the semiconductor chip.
  • the invention further provides a light-triggered semiconductor device which comprises an airtight package enveloping a light-triggered semiconductor chip, a transparent window allowing for the passage of a signal light to the light-sensitive area of the main surface of the semiconductor chip held in the airtight package, and a light guide connected to the light-sensitive area of the main surface of said semiconductor chip, wherein that end face of the light guide which faces the semiconductor chip is chosen to have a larger diameter than the light-sensitive area formed on the main surface of the semiconductor chip, that end portion of the light guide which faces the semiconductor chip is connected to the light-sensitive area of the main surface of the semiconductor chip through a laminated block consisting of an elastic transparent material attached to the end face of the light guide and another transparent material deposited over the light-sensitive area and is formed of a pair of mutually engaged members, and one of the mutually engaged members is securely supported in a prescribed position on the main surface of the semiconductor chip by means of a material previously fixed on the main surface.
  • FIG. 1 is a cross-sectional view of the conventional light-triggered thyristor
  • FIG. 2 is a cross-sectional view of the main part of the conventional light-triggered thyristor
  • FIG. 3 is a cross-sectional view of a light-triggered thyristor according to a first embodiment of this invention
  • FIG. 4 is an enlarged sectional view of the main part of the light-triggered thyristor of FIG. 3;
  • FIG. 5 is an oblique view of a light guide-locating device embodying this invention.
  • FIG. 6 is a side view of the light guide-locating device of FIG. 5;
  • FIG. 7 is an oblique view of a light guide securely set in place by the locating device of FIG. 5;
  • FIG. 8 is a fractional sectional view of a light-triggered thyristor according to a second embodiment of the invention.
  • FIGS. 3 and 4 denote a light-triggered thyristor according to a first embodiment of the invention.
  • Reference numeral 11 denotes a semiconductor chip. Electrode layers 11a, 11c mounted on both main surfaces of the thyristor are respectively pressed against the intervening semiconductor chip by the corresponding electrode supports 12a, 12c to lead out a cathode and anode.
  • a signal light is projected on a light-sensitive area A formed substantially at the center of that main surface of the thyristor which faces the cathode.
  • a light guide through which a signal light is projected on the thyristor is formed of an optical fiber 13.
  • One end face 13a of the optical fiber 13 is set opposite the light-sensitive area A.
  • the one end face 13a is chosen to have a larger area than that of the light-sensitive area A.
  • the optical fiber 13 is extended along the electrode support 12c in parallel with the main surface of the semiconductor chip 11 through a pipe 15 penetrating the peripheral wall of an envelope 14 in such a manner that the other end face 13b of the optical fiber 13 lies near the light-receiving window.
  • Both end faces 13a, 13b of the light guide 13 are fitted with an elastic transparent material such as a piece of silicone rubber 16 having the same refraction index as the light guide 13.
  • That end face of the light guide which is set opposite to the semiconductor chip 11 may be indirectly connected to the main surface of the semiconductor chip 11 by means of a light guide-locating device 21 consisting of a pair of mutually engaged components 21a, 21b shown in FIG. 4.
  • a light guide-locating device 21 consisting of a pair of mutually engaged components 21a, 21b shown in FIG. 4.
  • one component 21a of the light guide-locating device 21 is previously fixed to the main surface of the semiconductor chip 11 by means of an adhesive 17.
  • FIG. 5 shows the step of fixing the light guide or optical fiber 13 by means of the locating device 21.
  • the light guide-locating device 21 is formed of a first locating component 21a and a second elastic locating component 21b.
  • the first locating component 21a comprises a disc provided with a segmental notch 21c having a control angle, for example, of 90°.
  • the second locating component 21b is provided with a segmental portion 21d engageable with the segmental notch 21c of the first locating component 21a.
  • the second locating component 21b is further provided with an annular member 21e substantially engageable with the outer periphery of the disc section of the first locating component 21a.
  • the central portions of both locating components 21a, 21b are respectively provided with notches 21f', 21f" which jointly define a circular opening 21f when both locating components 21a, 21b are engaged with each other.
  • the first locating component 21a is fixed to the surface of the chip 11 by means of an adhesive 17 (FIG. 6), thereby causing the circular opening 21f to be exactly positioned on the light-sensitive area A. Thereafter, that end face 13a of the light guide 13 which has been fitted with an elastic transparent strip, for example, a piece of silicone rubber is inserted into the circular opening 21f'.
  • the light guide 13 is inserted into the second locating component 21b.
  • This second locating component 21b is tightly fitted around the peripheral wall of the first locating component 21a by utilizing the elasticity of the second locating component 21b (FIG. 7).
  • the above-mentioned process enables the end face 13a of the light guide 13 to be exactly set on the light-sensitive area A.
  • FIG. 8 illustrates the above-mentioned process. Namely, an elastic transparent material 16' is fitted fully over the light-sensitive area A.
  • the other elements of FIG. 8 are the same as those of FIG. 3, and denoted by the same numerals, so the description has been omitted.
  • the coating of the elastic transparent material 16', for example, a piece of silicone rubber on the light-sensitive area A offers the advantages that even when the end face 13a of the light guide 13 which is set opposite to the semiconductor chip is somewhat displaced (to an extent of ⁇ x as indicated in FIG. 8), a light can be projected over the whole of the light-sensitive area A by the refraction index of the silicone rubber as indicated by broken line arrows given in FIG.
  • the whole area of the light-sensitive area A functions effectively, thereby enabling the whole of the light-sensitive area to be uniformly lighted without a decline in the light-triggering sensitivity; the ratio of di/dt is prevented from falling; the coating of the transparent silicone rubber on the light-sensitive area A exerts substantially no harmful effect in the light transmitting efficiency; and further the application of the silicone rubber has a cushioning effect against a lengthwise mechanical stress caused by the connection between the end face of the light guide 13 and the light-sensitive area A.
  • the above-mentioned silicone rubber is still viscous when it is applied, and consequently can be made into a semispherical form (FIG. 8) by applying surface tension.
  • This invention is further applicable to a light-triggered semiconductor device in which the light guide penetrates the envelope perpendicularly to the main light-sensitive area of a semiconductor chip.
  • the transparent material need not be limited to silicone rubber, but may be prepared from any other suitable material, provided its refraction index meets the requirements.
  • the invention is applicable not only to a light-triggered thyristor or phototransistor but also to any other semiconductor device.
  • That end face of the light guide which faces the semiconductor chip is chosen to have a larger diameter than the opening of the light-sensitive area of the main surface of the semiconductor chip, and, as the need arises, a transparent material is coated over the light-sensitive area. Even if, therefore, the light guide is slightly displaced from the light-sensitive area, light can be fully radiated over the whole of the light-sensitive area. Consequently, there will be obtained advantages such as the light-triggering sensitivity of the subject device not decreasing, the light-sensitive area being uniformly illuminated, thereby saving a decline in the ratio di/dt, and the light guide and light-sensitive area not being fixed together, thereby preventing the light guide from cracking or breaking from thermal or mechanical strains.
  • the application of expandable silicone rubber to that end face of the light guide which faces the semiconductor chip will render the subject device permanently resistant to the linear stress.
  • this invention provides a highly efficient and reliable light-triggered semiconductor device in which the light sensitivity and the ratios dv/dt and di/dt are prevented from being reduced.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)
US06/526,807 1982-08-31 1983-08-26 Light-triggered semiconductor device Expired - Lifetime US4695871A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP57149995A JPS5940575A (ja) 1982-08-31 1982-08-31 光駆動型半導体装置
JP57-149995 1982-08-31
JP57-230688 1982-12-28
JP57230688A JPS59123263A (ja) 1982-12-28 1982-12-28 光駆動型半導体装置

Publications (1)

Publication Number Publication Date
US4695871A true US4695871A (en) 1987-09-22

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US06/526,807 Expired - Lifetime US4695871A (en) 1982-08-31 1983-08-26 Light-triggered semiconductor device

Country Status (3)

Country Link
US (1) US4695871A (enrdf_load_stackoverflow)
DE (1) DE3331451A1 (enrdf_load_stackoverflow)
GB (1) GB2127220B (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4847210A (en) * 1988-08-05 1989-07-11 Motorola Inc. Integrated pin photo-detector method
US5430567A (en) * 1992-09-16 1995-07-04 International Business Machines Corporation Method of clocking integrated circuit chips
WO1997019375A1 (en) * 1995-11-24 1997-05-29 Biacore Ab Optical coupling device and method for its production
DE19626661A1 (de) * 1996-07-03 1998-01-08 Asea Brown Boveri Lichtzündbarer Leistungshalbleiter
US20070274636A1 (en) * 2003-12-30 2007-11-29 Osram Opto Semiconductors Gmbh Optoelectronic Module, and Method for the Production Thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2756640B1 (fr) * 1996-12-03 1999-02-19 France Telecom Dispositif de raccordement par fibrage entre deux composants optiques
US6203208B1 (en) * 1998-11-05 2001-03-20 Illinois Tool Works Inc. Fiber optic lighting system connector coupling medium

Citations (13)

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Publication number Priority date Publication date Assignee Title
GB985381A (en) * 1961-05-10 1965-03-10 Rca Corp Phototube
US3992717A (en) * 1974-06-21 1976-11-16 Westinghouse Electric Corporation Housing for a compression bonded encapsulation of a semiconductor device
GB1485695A (en) * 1974-02-06 1977-09-14 Corning Glass Works Systems for transmitting optical wave energy
GB2005860A (en) * 1977-10-07 1979-04-25 Philips Nv Coupling device for optically connecting a light source to a bundle of optical fibres
GB2027991A (en) * 1978-08-03 1980-02-27 Westinghouse Electric Corp Improved light activated semiconductor switch
EP0009330A1 (en) * 1978-09-22 1980-04-02 AMP INCORPORATED (a New Jersey corporation) Optical fibre adaptor
EP0010352A1 (en) * 1978-10-16 1980-04-30 Motorola, Inc. Opto-electrical semiconductor device
GB2036997A (en) * 1978-11-02 1980-07-02 Philips Nv Optical fibre electrocoupling device
EP0021352A1 (en) * 1979-06-19 1981-01-07 Kabushiki Kaisha Toshiba Light-driven semiconductor device
GB2053563A (en) * 1979-06-06 1981-02-04 Motorola Inc Process for attaching optical fibre to semiconductor die
US4257058A (en) * 1979-07-05 1981-03-17 Electric Power Research Institute, Inc. Package for radiation triggered semiconductor device and method
GB1587442A (en) * 1977-01-27 1981-04-01 Electric Power Res Inst Light-activated semi conductor device package unit
EP0054300A1 (en) * 1980-12-16 1982-06-23 Mitsubishi Denki Kabushiki Kaisha Optical coupling device for a photo-semiconductor element and an optical fiber

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157273A (en) 1979-05-25 1980-12-06 Toshiba Corp Photo-driven semiconductor device

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB985381A (en) * 1961-05-10 1965-03-10 Rca Corp Phototube
GB1485695A (en) * 1974-02-06 1977-09-14 Corning Glass Works Systems for transmitting optical wave energy
US3992717A (en) * 1974-06-21 1976-11-16 Westinghouse Electric Corporation Housing for a compression bonded encapsulation of a semiconductor device
GB1587442A (en) * 1977-01-27 1981-04-01 Electric Power Res Inst Light-activated semi conductor device package unit
GB2005860A (en) * 1977-10-07 1979-04-25 Philips Nv Coupling device for optically connecting a light source to a bundle of optical fibres
GB2027991A (en) * 1978-08-03 1980-02-27 Westinghouse Electric Corp Improved light activated semiconductor switch
EP0009330A1 (en) * 1978-09-22 1980-04-02 AMP INCORPORATED (a New Jersey corporation) Optical fibre adaptor
EP0010352A1 (en) * 1978-10-16 1980-04-30 Motorola, Inc. Opto-electrical semiconductor device
GB2036997A (en) * 1978-11-02 1980-07-02 Philips Nv Optical fibre electrocoupling device
GB2053563A (en) * 1979-06-06 1981-02-04 Motorola Inc Process for attaching optical fibre to semiconductor die
EP0021352A1 (en) * 1979-06-19 1981-01-07 Kabushiki Kaisha Toshiba Light-driven semiconductor device
US4257058A (en) * 1979-07-05 1981-03-17 Electric Power Research Institute, Inc. Package for radiation triggered semiconductor device and method
EP0054300A1 (en) * 1980-12-16 1982-06-23 Mitsubishi Denki Kabushiki Kaisha Optical coupling device for a photo-semiconductor element and an optical fiber

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4847210A (en) * 1988-08-05 1989-07-11 Motorola Inc. Integrated pin photo-detector method
US5430567A (en) * 1992-09-16 1995-07-04 International Business Machines Corporation Method of clocking integrated circuit chips
US5434524A (en) * 1992-09-16 1995-07-18 International Business Machines Corporation Method of clocking integrated circuit chips
WO1997019375A1 (en) * 1995-11-24 1997-05-29 Biacore Ab Optical coupling device and method for its production
DE19626661A1 (de) * 1996-07-03 1998-01-08 Asea Brown Boveri Lichtzündbarer Leistungshalbleiter
US20070274636A1 (en) * 2003-12-30 2007-11-29 Osram Opto Semiconductors Gmbh Optoelectronic Module, and Method for the Production Thereof
US8044474B2 (en) 2003-12-30 2011-10-25 Osram Opto Semiconductors Gmbh Optoelectronic module, and method for the production thereof

Also Published As

Publication number Publication date
DE3331451C2 (enrdf_load_stackoverflow) 1991-01-24
GB2127220A (en) 1984-04-04
GB2127220B (en) 1986-04-23
DE3331451A1 (de) 1984-03-01
GB8322868D0 (en) 1983-09-28

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