US4566913A - Rapid thermal annealing of silicon dioxide for reduced electron trapping - Google Patents

Rapid thermal annealing of silicon dioxide for reduced electron trapping Download PDF

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Publication number
US4566913A
US4566913A US06/636,042 US63604284A US4566913A US 4566913 A US4566913 A US 4566913A US 63604284 A US63604284 A US 63604284A US 4566913 A US4566913 A US 4566913A
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Prior art keywords
silicon dioxide
wafer
electron trapping
electronic properties
rapid thermal
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Expired - Lifetime
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US06/636,042
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English (en)
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Marc H. Brodsky
Zeev A. Weinberg
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International Business Machines Corp
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International Business Machines Corp
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Priority to US06/636,042 priority Critical patent/US4566913A/en
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, A NY CORP. reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION, A NY CORP. ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: BRODSKY, MARC H., WEINBERG, ZEEV A.
Priority to JP10170285A priority patent/JPS6142146A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/004—Annealing, incoherent light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/91—Controlling charging state at semiconductor-insulator interface

Definitions

  • This invention relates to integrated circuit production, and more particularly to a process for enhancing the electronic properties of silicon dioxide layers in metal oxide semiconductor (MOS) devices, reducing diffused water content and reducing electron trapping by rapid thermal annealing of the integrated circuit wafer during the part of the integrated circuit production process when the silicon dioxide layer is exposed.
  • MOS metal oxide semiconductor
  • the prior art techniques for enhancing the electronic properties of silicon dioxide insulating layers in MOS devices include long anneals at 1000 C to reduce electron trapping.
  • RTA rapid thermal annealing
  • a feature of the invention is rapid heating of a semiconductor chip or wafer by controlled application of radiation from a high intensity halogen lamp, so as to carry out an annealing process without disruption of other processes or long waiting periods.
  • the advantage of the invention is its high quality and convenience; its production of the desired enhancements are achieved without the extra effort and additional chance of contamination or unwanted diffusion inherent in longer anneals.
  • FIG. 1 is a schematic diagram of appropriate apparatus.
  • FIG. 2 is a graph showing electron trapping.
  • the invention is a process for providing reduced electron trapping characteristics to a silicon dioxide insulator film on a MOS integrated circuit wafer.
  • FIG. 1 shows typical apparatus.
  • the silicon semiconductor wafer 1 has silicon dioxide insulator 2 on its surface, which surface will subsequently have conductors deposited upon it.
  • the wafer is supported on a quartz plate 3 and inserted into a quartz enclosure 4.
  • the desired gas is flown into this enclosure at inlet port 5; the gas escapes at exit port 6.
  • An array of lamps 7, which are typically tungsten halogen lamps, are turned on to heat wafer 1 rapidly to the desired annealing temperature for a short time.
  • the anneal of a silicon dioxide film of thickness on the order of 100-1000 Angstroms is carried out in an atmosphere of argon or nitrogen at atmospheric pressure.
  • the preferred anneal is ten seconds at 600 C.
  • Anneals as low as 500 C for ten seconds convert oxides with diffused water into oxides as good as those grown in ultra-dry processes.
  • the effective range of temperatures and durations is 300 C-800 C for 3-15 seconds.
  • FIG. 2 shows the reduction in electron trapping achieved by the rapid thermal annealing; it is a graph of flatband voltage shifts as a function of electron injection time in MOS capacitor structures.
  • the flatband voltage shifts are proportional to the amount of electron trapping in the silicon dioxide.
  • the control curve shows high trapping in oxides before annealing. The control had water diffused into the silicon dioxide film to increase the electron trapping effect for the purpose of the experiment.
  • Other curves, labeled with annealing temperatures for rapid thermal annealing (RTA) show improvement in the form of reduced electron trapping. In particular, the curve for 600 C shows drastically reduced electron trapping, approaching the 0 trapping level.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
US06/636,042 1984-07-30 1984-07-30 Rapid thermal annealing of silicon dioxide for reduced electron trapping Expired - Lifetime US4566913A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US06/636,042 US4566913A (en) 1984-07-30 1984-07-30 Rapid thermal annealing of silicon dioxide for reduced electron trapping
JP10170285A JPS6142146A (ja) 1984-07-30 1985-05-15 ウエハ処理法

Applications Claiming Priority (1)

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US06/636,042 US4566913A (en) 1984-07-30 1984-07-30 Rapid thermal annealing of silicon dioxide for reduced electron trapping

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US4566913A true US4566913A (en) 1986-01-28

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JP (1) JPS6142146A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4621413A (en) * 1985-06-03 1986-11-11 Motorola, Inc. Fabricating a semiconductor device with reduced gate leakage
US4661177A (en) * 1985-10-08 1987-04-28 Varian Associates, Inc. Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources
US4814291A (en) * 1986-02-25 1989-03-21 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making devices having thin dielectric layers
US4845055A (en) * 1987-05-21 1989-07-04 Yamaha Corporation Rapid annealing under high pressure for use in fabrication of semiconductor device
US4868133A (en) * 1988-02-11 1989-09-19 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using RTA
US4962065A (en) * 1989-02-13 1990-10-09 The University Of Arkansas Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US5523240A (en) * 1990-05-29 1996-06-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor with a halogen doped blocking layer
US5681759A (en) * 1994-02-15 1997-10-28 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US5750443A (en) * 1995-07-10 1998-05-12 Rohm Co., Ltd. Method of manufacturing semiconductor device
US6010958A (en) * 1997-05-20 2000-01-04 United Microelectronics Corp. Method for improving the planarization of dielectric layer in the fabrication of metallic interconnects
US6174757B1 (en) 1994-02-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US20110263091A1 (en) * 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3556880A (en) * 1968-04-11 1971-01-19 Rca Corp Method of treating semiconductor devices to improve lifetime
US4229232A (en) * 1978-12-11 1980-10-21 Spire Corporation Method involving pulsed beam processing of metallic and dielectric materials
US4406053A (en) * 1980-07-31 1983-09-27 Fujitsu Limited Process for manufacturing a semiconductor device having a non-porous passivation layer
US4482393A (en) * 1979-12-17 1984-11-13 Sony Corporation Method of activating implanted ions by incoherent light beam

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898933A (ja) * 1981-12-09 1983-06-13 Seiko Epson Corp 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3556880A (en) * 1968-04-11 1971-01-19 Rca Corp Method of treating semiconductor devices to improve lifetime
US4229232A (en) * 1978-12-11 1980-10-21 Spire Corporation Method involving pulsed beam processing of metallic and dielectric materials
US4482393A (en) * 1979-12-17 1984-11-13 Sony Corporation Method of activating implanted ions by incoherent light beam
US4406053A (en) * 1980-07-31 1983-09-27 Fujitsu Limited Process for manufacturing a semiconductor device having a non-porous passivation layer

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Kadyrakunov et al., Phys. Stat. Sol. 70a (1982) K 15. *
Kadyrakunov et al., Phys. Stat. Sol. 70a (1982) K-15.
Kato et al., Jour. Electrochem. Soc. 131 (May 1984) 1145. *

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4621413A (en) * 1985-06-03 1986-11-11 Motorola, Inc. Fabricating a semiconductor device with reduced gate leakage
US4661177A (en) * 1985-10-08 1987-04-28 Varian Associates, Inc. Method for doping semiconductor wafers by rapid thermal processing of solid planar diffusion sources
US4814291A (en) * 1986-02-25 1989-03-21 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making devices having thin dielectric layers
US4845055A (en) * 1987-05-21 1989-07-04 Yamaha Corporation Rapid annealing under high pressure for use in fabrication of semiconductor device
US4868133A (en) * 1988-02-11 1989-09-19 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using RTA
US4962065A (en) * 1989-02-13 1990-10-09 The University Of Arkansas Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US7355202B2 (en) 1990-05-29 2008-04-08 Semiconductor Energy Co., Ltd. Thin-film transistor
US20040031961A1 (en) * 1990-05-29 2004-02-19 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor
US20090101910A1 (en) * 1990-05-29 2009-04-23 Hongyong Zhang Thin-film transistor
US5523240A (en) * 1990-05-29 1996-06-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor with a halogen doped blocking layer
US6607947B1 (en) 1990-05-29 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorinated layer for blocking alkali ions
US5681759A (en) * 1994-02-15 1997-10-28 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6709906B2 (en) 1994-02-28 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6174757B1 (en) 1994-02-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5750443A (en) * 1995-07-10 1998-05-12 Rohm Co., Ltd. Method of manufacturing semiconductor device
US6010958A (en) * 1997-05-20 2000-01-04 United Microelectronics Corp. Method for improving the planarization of dielectric layer in the fabrication of metallic interconnects
US20110263091A1 (en) * 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8945982B2 (en) * 2010-04-23 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9390918B2 (en) 2010-04-23 2016-07-12 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US20160322506A1 (en) * 2010-04-23 2016-11-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9978878B2 (en) * 2010-04-23 2018-05-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
JPS6142146A (ja) 1986-02-28
JPH0317373B2 (enrdf_load_stackoverflow) 1991-03-07

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